CN102254989A - Manufacturing method of high-efficiency thin-film solar cell - Google Patents

Abstract

The invention relates to a method for manufacturing a thin-film solar cell, in particular to a method for manufacturing a high-efficiency thin-film solar cell. It uses ultra-thin, high-transmittance ultra-clear float glass as the glass substrate, and uses high-strength hot-melt packaging materials to bond the back glass to prepare high-transmittance, high-efficiency thin-film solar cells. The photoelectric conversion efficiency of the thin-film solar cell manufactured by the method is higher, the production cost is lower, and the application of the thin-film solar cell can be wider, thereby expanding the market of the thin-film solar cell. By changing the thickness of the glass substrate and the back encapsulation material, the quality and safety performance of the thin-film solar cell are guaranteed, and the conversion efficiency of the thin-film solar cell is improved. This manufacturing method changes the thickness of the glass substrate from the existing 3.2mm to 0.4~1mm, and its light transmittance is between 95%~99% according to the thickness, which is much higher than that of ordinary ultra-clear float glass with a thickness of 3.2mm. 90% light transmittance.

Description

Method for manufacturing high-efficiency thin-film solar cells

technical field

The invention relates to a method for manufacturing a thin-film solar cell, in particular to a method for manufacturing a high-efficiency thin-film solar cell.

Background technique

The thickness of the glass substrate of the existing thin-film solar cell is 3.2mm, and the light transmission is not good, resulting in a low photoelectric conversion efficiency of the existing thin-film solar cell, which is 6.5% for the single-junction and 9% for the double-junction, and the production cost is also low. High, affecting the wide application of solar cells.

Contents of the invention

The purpose of the present invention is to provide a method for manufacturing high-efficiency thin-film solar cells with higher photoelectric conversion efficiency and lower production cost.

Technical solution of the present invention is:

The purpose of the present invention is to provide a method for manufacturing high-efficiency thin-film solar cells with higher photoelectric conversion efficiency and lower production cost.

Technical solution of the present invention is:

A method for manufacturing high-efficiency thin-film solar cells, which uses ultra-thin, high-transmittance ultra-clear float glass as the glass substrate, and prepares high-transmittance, high-efficiency thin-film solar cells by bonding the back glass with high-strength hot-melt packaging materials , which specifically includes the following steps:

1) Select ultra-clear, high-strength and low-iron float glass with a thickness of 0.4~1mm and a light transmittance of 95%~99% as the glass substrate;

2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 500~700nm;

Sheet resistance: less than 15Ω/□; light transmittance: the light transmittance of wavelength 400-800 nm should be greater than 90%;

3) Laser scribe the TCO film layer on the glass substrate;

4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows:

The process parameters for preparing the p-layer are:

Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 180°C~210°C, power density 0.2~0.35W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 23~35 , the flow ratio of silane and methane is 10:(1~1.35), and the deposition pressure is 100~140p _a ;

Preparation I layer process parameter is:

Use SiH ₄ and H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 19~21, the deposition temperature is 180°C~220°C, the power density is 0.29~0.55W/cm ² , and the deposition pressure is 110~155p _a ;

The process parameters for preparing the N layer are:

Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 21~32, the deposition temperature is 180℃~210℃, the power density is 0.25~0.45W/cm ² , and the deposition pressure is 110~150p _a ;

5) Laser scribe the film layer of PIN battery;

6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film;

AZO film thickness: 80~100nm; sheet resistance: less than 280 Ω/□;

Al film thickness: 250~300nm;

NiV film thickness: 80~110nm;

7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning;

8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass;

9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass;

10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, and packaging.

The technical effect of the invention is: the photoelectric conversion efficiency of the thin-film solar cell manufactured by the method is higher, the production cost is lower, and the application of the thin-film solar cell can be wider, thereby expanding the market of the thin-film solar cell. By changing the thickness of the glass substrate and the back encapsulation material, the quality and safety performance of the thin-film solar cell are guaranteed, and the conversion efficiency of the thin-film solar cell is improved. This manufacturing method changes the thickness of the glass substrate from the existing 3.2mm to 0.4~1mm, and its light transmittance is between 95%~99% according to the thickness, which is much higher than that of ordinary ultra-clear float glass with a thickness of 3.2mm. 90% light transmittance. The conversion efficiency of the battery has increased from the current single-junction 6.5% to 7.1%, and the double-junction has increased from 9% to 9.5%. On the premise of improving the efficiency, the production cost is greatly saved, which makes the application of the thin film battery more extensive and expands the market of the thin film battery.

Detailed ways

Embodiment 1, the manufacturing method of high-efficiency thin-film solar cells, which selects ultra-thin, high-transmittance ultra-clear float glass as the glass substrate, and uses high-strength hot-melt packaging materials to bond the back glass to prepare a high-transmittance, high-transmittance, A high-efficiency thin-film solar cell, which specifically includes the following steps:

1) Select ultra-clear, high-strength and low-iron float glass with a thickness of 0.4mm and a light transmittance of 99% as the glass substrate;

2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 500nm;

Sheet resistance: 10Ω/□; Light transmittance: The light transmittance at a wavelength of 400 nm is 91%;

3) Laser scribe the TCO film layer on the glass substrate;

4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows:

The process parameters for preparing the p-layer are:

Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 180°C, power density 0.2W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 23, silane to methane flow ratio is 10:1, deposition pressure is 100p _a ;

Preparation I layer process parameter is:

Use SiH ₄ , H ₂ gas, where the ratio R of H ₂ /SiH ₄ is 19, the deposition temperature is 180°C, the power density is 0.29W/cm ² , and the deposition pressure is 110p _a ;

The process parameters for preparing the N layer are:

Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 21, the deposition temperature is 180°C, the power density is 0.25W/cm ² , and the deposition pressure is 110p _a ;

5) Laser scribe the film layer of PIN battery;

6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film;

AZO film thickness: 80nm; sheet resistance: 220 Ω/□;

Al film thickness: 250nm;

NiV film thickness: 80nm;

7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning;

8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass;

9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass;

10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, and packaging.

The second embodiment differs from the first embodiment in that it specifically includes the following steps:

1) Choose ultra-clear, high-strength and low-iron float glass with a thickness of 1mm and a light transmittance of 95% as the glass substrate;

2) Prepare TCO on this glass substrate by LPCVD or magnetron sputtering; film thickness: 700nm;

Sheet resistance: 14Ω/□; Light transmittance: The light transmittance at a wavelength of 800 nm must be greater than 95%;

3) Laser scribe the TCO film layer on the glass substrate;

4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows:

The process parameters for preparing the p-layer are:

Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 210°C, power density 0.35W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 35, silane to methane flow ratio is 10:1.35, the deposition pressure is 140p _a ;

Preparation I layer process parameter is:

Use SiH ₄ , H ₂ gas, where the ratio R of H ₂ /SiH ₄ is 21, the deposition temperature is 220°C, the power density is 0.55W/cm ² , and the deposition pressure is 155p _a ;

The process parameters for preparing the N layer are:

Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 32, the deposition temperature is 210°C, the power density is 0.45W/cm ² , and the deposition pressure is 150p _a ;

5) Laser scribe the film layer of PIN battery;

6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film;

AZO film thickness: 100nm; sheet resistance: 270 Ω/□;

Al film thickness: 300nm;

NiV film thickness: 110nm;

7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning;

8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass;

9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass;

10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, and packaging.

The third embodiment differs from the first embodiment in that it specifically includes the following steps:

1) Choose ultra-clear, high-strength and low-iron float glass with a thickness of 0.7mm and a light transmittance of 97% as the glass substrate;

2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 600nm;

Sheet resistance: 13Ω/□; Light transmittance: The light transmittance at a wavelength of 600 nm is 93%;

3) Laser scribe the TCO film layer on the glass substrate;

4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows:

The process parameters for preparing the p-layer are:

Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 200°C, power density 0.28W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 27, silane to methane flow ratio is 10:1.2, the deposition pressure is 120p _a ;

Preparation I layer process parameter is:

Use SiH ₄ and H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 20, the deposition temperature is 200°C, the power density is 0.42W/cm ² , and the deposition pressure is 130p _a ;

The process parameters for preparing the N layer are:

Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 26, the deposition temperature is 195°C, the power density is 0.34W/cm ² , and the deposition pressure is 130p _a ;

5) Laser scribe the film layer of PIN battery;

6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film;

AZO film thickness: 90nm; sheet resistance: 260 Ω/□;

Al film thickness: 270nm;

NiV film thickness: 95nm;

7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning;

8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass;

9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass;

10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, and packaging.

Choose high-strength hot-melt packaging materials with different thicknesses according to the thickness of the glass substrate. Generally speaking, the thinner the glass substrate is, the thicker the packaging material is selected. The encapsulation material can be effectively bonded to the glass substrate and the encapsulation glass plate on the back after thermal melting, and its strength can meet the requirements of IEC61730.

Claims (4)

1. The manufacturing method of high-efficiency thin-film solar cells is characterized in that: it selects ultra-thin, high-transmittance ultra-clear float glass as the glass substrate, and prepares a high-transmittance glass by bonding the back glass with high-strength hot-melt packaging materials. rate, high-efficiency thin-film solar cells, which specifically include the following steps: 1) Select ultra-clear, high-strength and low-iron float glass with a thickness of 0.4~1mm and a light transmittance of 95%~99% as the glass substrate; 2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 500~700nm; Sheet resistance: less than 15Ω/□; light transmittance: the light transmittance of wavelength 400-800 nm should be greater than 90%; 3) Laser scribe the TCO film layer on the glass substrate; 4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows: The process parameters for preparing the p-layer are: Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 180°C~210°C, power density 0.2~0.35W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 23~35 , the flow ratio of silane and methane is 10:(1~1.35), and the deposition pressure is 100~140p _a ; Preparation I layer process parameter is: Use SiH ₄ and H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 19~21, the deposition temperature is 180°C~220°C, the power density is 0.29~0.55W/cm ² , and the deposition pressure is 110~155p _a ; The process parameters for preparing the N layer are: Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 21~32, the deposition temperature is 180℃~210℃, the power density is 0.25~0.45W/cm ² , and the deposition pressure is 110~150p _a ; 5) Laser scribe the film layer of PIN battery; 6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film; AZO film thickness: 80~100nm; sheet resistance: less than 280 Ω/□; Al film thickness: 250~300nm; NiV film thickness: 80~110nm; 7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning; 8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass; 9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass; 10) Packaging: The pre-pressed solar panels are laminated and packaged in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, packaging and other processes. 2. The manufacture method of high-efficiency thin-film solar cell as claimed in claim 1, is characterized in that specifically comprising the following steps: 1) Select ultra-clear, high-strength and low-iron float glass with a thickness of 0.4mm and a light transmittance of 99% as the glass substrate; 2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 500nm; Sheet resistance: 10Ω/□; Light transmittance: The light transmittance at a wavelength of 400 nm is 91%; 3) Laser scribe the TCO film layer on the glass substrate; 4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows: The process parameters for preparing the p-layer are: Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 180°C, power density 0.2W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 23, silane to methane flow ratio is 10:1, deposition pressure is 100p _a ; Preparation I layer process parameter is: Use SiH ₄ , H ₂ gas, where the ratio R of H ₂ /SiH ₄ is 19, the deposition temperature is 180°C, the power density is 0.29W/cm ² , and the deposition pressure is 110p _a ; The process parameters for preparing the N layer are: Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 21, the deposition temperature is 180°C, the power density is 0.25W/cm ² , and the deposition pressure is 110p _a ; 5) Laser scribe the film layer of PIN battery; 6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film; AZO film thickness: 80nm; sheet resistance: 220 Ω/□; Al film thickness: 250nm; NiV film thickness: 80nm; 7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning; 8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass; 9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass; 10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are manufactured after cleaning, inspection, testing, packaging and other processes. 3. The manufacture method of high-efficiency thin-film solar cell as claimed in claim 1, is characterized in that specifically comprising the following steps: 1) Select ultra-clear, high-strength and low-iron float glass with a thickness of 1mm and a light transmittance of 95% as the glass substrate; 2) Prepare TCO on this glass substrate by LPCVD or magnetron sputtering; film thickness: 700nm; Sheet resistance: 14Ω/□; Light transmittance: The light transmittance at a wavelength of 800 nm must be greater than 95%; 3) Laser scribe the TCO film layer on the glass substrate; 4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows: The process parameters for preparing the p-layer are: Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 210°C, power density 0.35W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 35, silane to methane flow ratio is 10:1.35, the deposition pressure is 140p _a ; Preparation I layer process parameter is: Use SiH ₄ , H ₂ gas, where the ratio R of H ₂ /SiH ₄ is 21, the deposition temperature is 220°C, the power density is 0.55W/cm ² , and the deposition pressure is 155p _a ; The process parameters for preparing the N layer are: Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 32, the deposition temperature is 210°C, the power density is 0.45W/cm ² , and the deposition pressure is 150p _a ; 5) Laser scribe the film layer of PIN battery; 6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film; AZO film thickness: 100nm; sheet resistance: 270 Ω/□; Al film thickness: 300nm; NiV film thickness: 110nm; 7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning; 8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass; 9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass; 10) Encapsulation: The pre-pressed solar panels are laminated and encapsulated in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, packaging and other processes. 4. The manufacture method of high-efficiency thin-film solar cell as claimed in claim 1, is characterized in that specifically comprising the following steps: 1) Choose ultra-clear, high-strength and low-iron float glass with a thickness of 0.7mm and a light transmittance of 97% as the glass substrate; 2) Prepare TCO on the glass substrate by LPCVD or magnetron sputtering; film thickness: 600nm; Sheet resistance: 13Ω/□; Light transmittance: The light transmittance at a wavelength of 600 nm is 93%; 3) Laser scribe the TCO film layer on the glass substrate; 4) The PIN battery layer is prepared on the TCO film layer, and the double-junction PIN/PIN film layer is prepared continuously. The preparation process is as follows: The process parameters for preparing the p-layer are: Use B(CH ₄ ) ₃ , SiH ₄ , CH ₄ , H ₂ gases, deposition temperature 200°C, power density 0.28W/cm ² , hydrogen dilution ratio R: H ₂ /SiH ₄ is 27, silane to methane flow ratio is 10:1.2, the deposition pressure is 120p _a ; Preparation I layer process parameter is: Use SiH ₄ and H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 20, the deposition temperature is 200°C, the power density is 0.42W/cm ² , and the deposition pressure is 130p _a ; The process parameters for preparing the N layer are: Use PH ₃ , SiH ₄ , H ₂ gases, where the ratio R of H ₂ /SiH ₄ is 26, the deposition temperature is 195°C, the power density is 0.34W/cm ² , and the deposition pressure is 130p _a ; 5) Laser scribe the film layer of PIN battery; 6) Prepare the battery back electrode by magnetron sputtering, including AZO film, Al film and NiV film; AZO film thickness: 90nm; sheet resistance: 260 Ω/□; Al film thickness: 270nm; NiV film thickness: 95nm; 7) Laser scribing the back electrode, laser edge cleaning machine edge cleaning, ultrasonic cleaning; 8) Bonding: Select high-strength hot-melt adhesive materials to laminate and bond the prepared solar cells and the 4mm thick fully tempered back glass; 9) Pre-pressing: use a roller press to pre-press the laminated and bonded solar cells and back glass; 10) Packaging: The pre-pressed solar panels are laminated and packaged in an autoclave, and qualified high-efficiency thin-film solar cells are produced after cleaning, inspection, testing, packaging and other processes.