CN102254989A - Manufacturing method of high-efficiency thin-film solar cell - Google Patents
Manufacturing method of high-efficiency thin-film solar cell Download PDFInfo
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- CN102254989A CN102254989A CN2011101649665A CN201110164966A CN102254989A CN 102254989 A CN102254989 A CN 102254989A CN 2011101649665 A CN2011101649665 A CN 2011101649665A CN 201110164966 A CN201110164966 A CN 201110164966A CN 102254989 A CN102254989 A CN 102254989A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a manufacturing method of thin-film solar cells and in particular relates to a manufacturing method of high-efficiency thin-film solar cells. According to the method, a piece of ultra-thin high-transmittance ultra-white float glass is used as a glass substrate, and a glass back board is bonded by use of a high-strength hot-melt packaging material, to make a high-transmittance high-efficiency thin-film solar cell. The thin-film solar cell made by the method provided by the invention has higher photoelectric conversion efficiency and lower production costs; and the application range of thin-film solar cells is increased so that the market prospect of thin-film solar cells is broaden. By changing the thickness of the glass substrate and the back packaging material, the quality and safety performance of thin-film solar cells are guaranteed, and besides, the conversion efficiency of thin-film solar cells is increased. According to the manufacturing method, the thickness of the glass substrate is changed to 0.4 to 1 mm from 3.2 mm in the prior art, the light transmittance is dependent on the thickness and ranges from 95% to 99%, which is far higher than the light transmittance (90%) of the common 3.2 mm thickness ultra-white float glass.
Description
Technical field
The present invention relates to the manufacture method of thin film solar cell, be specifically related to a kind of manufacture method of efficient film solar cell.
Background technology
The thickness of the glass substrate of existing thin film solar cell is 3.2mm, and light transmission is bad, causes the photoelectric conversion efficiency of existing thin film solar cell lower, unijunction be 6.5%, binode be 9%, production cost is also higher, has influence on the extensive use of solar cell.
Summary of the invention
The manufacture method that the purpose of this invention is to provide the efficient film solar cell that a kind of photoelectric conversion efficiency is higher, production cost is lower.
Technical solution of the present invention is:
The manufacture method that the purpose of this invention is to provide the efficient film solar cell that a kind of photoelectric conversion efficiency is higher, production cost is lower.
Technical solution of the present invention is:
The manufacture method of efficient film solar cell, it selects for use ultra-thin, high transmission rate ultra-white float glass as glass substrate, is prepared into high transmission rate, efficient film solar cell by the bonding back-panel glass of high-strength hot sealing by fusing package material, and it specifically may further comprise the steps:
1) selecting thickness is that 0.4 ~ 1mm, light transmission rate are that 95% ~ 99% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 500 ~ 700nm;
Square resistance: less than 15 Ω/; Light permeable rate: the light transmission rate of wavelength 400～800 nm is greater than 90%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 180 ℃ ~ 210 ℃ of depositing temperatures, power density 0.2 ~ 0.35W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 23 ~ 35, silane is 10:(1 ~ 1.35 with the methane flow ratio), deposition pressure is 100 ~ 140p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 19～21,180 ℃ ~ 220 ℃ of depositing temperatures, power density 0.29 ~ 0.55W/cm
2, deposition pressure is 110 ~ 155p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21～32,180 ℃ ~ 210 ℃ of depositing temperatures, power density 0.25 ~ 0.45W/cm
2, deposition pressure is 110 ~ 150p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 80 ~ 100nm; Square resistance: less than 280 Ω/;
Al thicknesses of layers: 250 ~ 300nm;
NiV thicknesses of layers: 80 ~ 110nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
Technique effect of the present invention is: the thin film solar cell photoelectric conversion efficiency of using this method to make is higher, and production cost is lower, can make the application of hull cell more extensive, thereby has expanded the market of hull cell.By changing the thickness and the back side encapsulating material of glass substrate, both guaranteed the quality and the security performance of thin film solar cell, improved the conversion efficiency of thin film solar cell again.This manufacture method changes to 0.4 ~ 1mm to the thickness of glass substrate by existing 3.2mm, and its light transmission rate does not coexist between 95% ~ 99% according to thickness, is higher than the light transmission rate of the thick common ultra-white float glass 90% of 3.2mm far away.It is 7.1% that battery conversion efficiency is promoted by present unijunction 6.5%, and it is 9.5% that binode promotes by 9%.Under the prerequisite that promotes efficient, save production cost again greatly, made that the application of hull cell is more extensive, expanded the market of hull cell.
Embodiment
Embodiment one, the manufacture method of efficient film solar cell, it selects for use ultra-thin, high transmission rate ultra-white float glass as glass substrate, is prepared into high transmission rate, efficient film solar cell by the bonding back-panel glass of high-strength hot sealing by fusing package material, and it specifically may further comprise the steps:
1) selecting thickness is that 0.4mm, light transmission rate are that 99% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 500nm;
Square resistance: 10 Ω/; Light permeable rate: the light transmission rate of wavelength 400 nm is 91%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 180 ℃ of depositing temperatures, power density 0.2W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 23, silane is 10:1 with the methane flow ratio, and deposition pressure is 100p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 19,180 ℃ of depositing temperatures, power density 0.29W/cm
2, deposition pressure is 110p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21,180 ℃ of depositing temperatures, power density 0.25W/cm
2, deposition pressure is 110p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 80nm; Square resistance: 220 Ω/;
Al thicknesses of layers: 250nm;
NiV thicknesses of layers: 80nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
Embodiment two, with the difference of embodiment one be specifically to may further comprise the steps:
1) selecting thickness is that 1mm, light transmission rate are that 95% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 700nm;
Square resistance: 14 Ω/; Light permeable rate: the light transmission rate of wavelength 800 nm is greater than 95%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 210 ℃ of depositing temperatures, power density 0.35W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 35, silane is 10:1.35 with the methane flow ratio, and deposition pressure is 140p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21,220 ℃ of depositing temperatures, power density 0.55W/cm
2, deposition pressure is 155p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 32,210 ℃ of depositing temperatures, power density 0.45W/cm
2, deposition pressure is 150p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 100nm; Square resistance: 270 Ω/;
Al thicknesses of layers: 300nm;
NiV thicknesses of layers: 110nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
Embodiment three, with the difference of embodiment one be specifically to may further comprise the steps:
1) selecting thickness is that 0.7mm, light transmission rate are that 97% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 600nm;
Square resistance: 13 Ω/; Light permeable rate: the light transmission rate of wavelength 600 nm is 93%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 200 ℃ of depositing temperatures, power density 0.28W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 27, silane is 10:1.2 with the methane flow ratio, and deposition pressure is 120p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 20,200 ℃ of depositing temperatures, power density 0.42W/cm
2, deposition pressure is 130p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 26,195 ℃ of depositing temperatures, power density 0.34W/cm
2, deposition pressure is 130p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 90nm; Square resistance: 260 Ω/;
Al thicknesses of layers: 270nm;
NiV thicknesses of layers: 95nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
Select the high-strength hot sealing by fusing package material of different-thickness according to thickness of glass substrate.In general, the thickness of the thin more selection encapsulating material of thickness of glass substrate is thick more.This encapsulating material can be effectively bonding with the packaged glass plate at the glass substrate and the back side behind hot melt, and intensity can reach the requirement of IEC61730.
Claims (4)
1. the manufacture method of efficient film solar cell, it is characterized in that: it selects for use ultra-thin, high transmission rate ultra-white float glass as glass substrate, be prepared into high transmission rate, efficient film solar cell by the bonding back-panel glass of high-strength hot sealing by fusing package material, it specifically may further comprise the steps:
1) selecting thickness is that 0.4 ~ 1mm, light transmission rate are that 95% ~ 99% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 500 ~ 700nm;
Square resistance: less than 15 Ω/; Light permeable rate: the light transmission rate of wavelength 400～800 nm is greater than 90%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 180 ℃ ~ 210 ℃ of depositing temperatures, power density 0.2 ~ 0.35W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 23 ~ 35, silane is 10:(1 ~ 1.35 with the methane flow ratio), deposition pressure is 100 ~ 140p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 19～21,180 ℃ ~ 220 ℃ of depositing temperatures, power density 0.29 ~ 0.55W/cm
2, deposition pressure is 110 ~ 155p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21～32,180 ℃ ~ 210 ℃ of depositing temperatures, power density 0.25 ~ 0.45W/cm
2, deposition pressure is 110 ~ 150p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 80 ~ 100nm; Square resistance: less than 280 Ω/;
Al thicknesses of layers: 250 ~ 300nm;
NiV thicknesses of layers: 80 ~ 110nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
2. the manufacture method of efficient film solar cell as claimed in claim 1 is characterized in that specifically may further comprise the steps:
1) selecting thickness is that 0.4mm, light transmission rate are that 99% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 500nm;
Square resistance: 10 Ω/; Light permeable rate: the light transmission rate of wavelength 400 nm is 91%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 180 ℃ of depositing temperatures, power density 0.2W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 23, silane is 10:1 with the methane flow ratio, and deposition pressure is 100p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 19,180 ℃ of depositing temperatures, power density 0.29W/cm
2, deposition pressure is 110p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21,180 ℃ of depositing temperatures, power density 0.25W/cm
2, deposition pressure is 110p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 80nm; Square resistance: 220 Ω/;
Al thicknesses of layers: 250nm;
NiV thicknesses of layers: 80nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
3. the manufacture method of efficient film solar cell as claimed in claim 1 is characterized in that specifically may further comprise the steps:
1) selecting thickness is that 1mm, light transmission rate are that 95% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 700nm;
Square resistance: 14 Ω/; Light permeable rate: the light transmission rate of wavelength 800 nm is greater than 95%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 210 ℃ of depositing temperatures, power density 0.35W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 35, silane is 10:1.35 with the methane flow ratio, and deposition pressure is 140p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 21,220 ℃ of depositing temperatures, power density 0.55W/cm
2, deposition pressure is 155p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 32,210 ℃ of depositing temperatures, power density 0.45W/cm
2, deposition pressure is 150p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 100nm; Square resistance: 270 Ω/;
Al thicknesses of layers: 300nm;
NiV thicknesses of layers: 110nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
4. the manufacture method of efficient film solar cell as claimed in claim 1 is characterized in that specifically may further comprise the steps:
1) selecting thickness is that 0.7mm, light transmission rate are that 97% the low iron float glass of ultrawhite, high strength is as glass substrate;
2) on this glass substrate, prepare TCO with LPCVD or magnetron sputtering; Thicknesses of layers: 600nm;
Square resistance: 13 Ω/; Light permeable rate: the light transmission rate of wavelength 600 nm is 93%;
3) to the TCO rete laser grooving and scribing on the glass substrate;
4) preparation PIN battery layers on the TCO rete, the continuous preparation PIN/PIN rete of binode, preparation technology is as follows:
Preparation p layer process parameter is:
Use B (CH
4)
3, SiH
4, CH
4, H
2Gas, 200 ℃ of depositing temperatures, power density 0.28W/cm
2, hydrogen thinner ratio R:H
2/ SiH
4Be 27, silane is 10:1.2 with the methane flow ratio, and deposition pressure is 120p
a
Preparation I layer process parameter is:
Use SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 20,200 ℃ of depositing temperatures, power density 0.42W/cm
2, deposition pressure is 130p
a
Preparation N layer process parameter is:
Use PH
3, SiH
4, H
2Gas, wherein H
2/ SiH
4The R that compares is 26,195 ℃ of depositing temperatures, power density 0.34W/cm
2, deposition pressure is 130p
a
5) laser grooving and scribing PIN battery rete;
6) prepare the battery back electrode with magnetron sputtering, comprise AZO rete, Al rete and NiV rete;
AZO thicknesses of layers: 90nm; Square resistance: 260 Ω/;
Al thicknesses of layers: 270nm;
NiV thicknesses of layers: 95nm;
7) laser grooving and scribing back electrode, the clear limit of machine, the clear limit of laser, ultrasonic waves for cleaning;
8) bonding: solar cell that selection high strength hot melt adhesives will prepare and the thick all steel back-panel glass of 4mm laminate and bond together;
9) precompressed; Solar cell and the back-panel glass utilizing roll squeezer to laminate to bond together are carried out precompressed;
10) encapsulation: the cell panel after the precompressed is encapsulated by autoclave lamination, just produce qualified efficient film solar cell through operations such as cleaning, check, detection, packings.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110164966A CN102254989B (en) | 2011-06-20 | 2011-06-20 | Manufacturing method of high-efficiency thin-film solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110164966A CN102254989B (en) | 2011-06-20 | 2011-06-20 | Manufacturing method of high-efficiency thin-film solar cell |
Publications (2)
| Publication Number | Publication Date |
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| CN102254989A true CN102254989A (en) | 2011-11-23 |
| CN102254989B CN102254989B (en) | 2012-09-19 |
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ID=44982102
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| CN201110164966A Active CN102254989B (en) | 2011-06-20 | 2011-06-20 | Manufacturing method of high-efficiency thin-film solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898668A (en) * | 2017-02-23 | 2017-06-27 | 深圳先进技术研究院 | Solar panel and its method for packing |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201532957U (en) * | 2009-10-26 | 2010-07-21 | 新奥光伏能源有限公司 | Silica-based film solar battery |
| CN101980370A (en) * | 2010-08-31 | 2011-02-23 | 深圳市创益科技发展有限公司 | Frameless solar battery component and encapsulation method |
-
2011
- 2011-06-20 CN CN201110164966A patent/CN102254989B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201532957U (en) * | 2009-10-26 | 2010-07-21 | 新奥光伏能源有限公司 | Silica-based film solar battery |
| CN101980370A (en) * | 2010-08-31 | 2011-02-23 | 深圳市创益科技发展有限公司 | Frameless solar battery component and encapsulation method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106898668A (en) * | 2017-02-23 | 2017-06-27 | 深圳先进技术研究院 | Solar panel and its method for packing |
| CN106898668B (en) * | 2017-02-23 | 2019-02-05 | 深圳先进技术研究院 | Solar panel and its packaging method |
Also Published As
| Publication number | Publication date |
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| CN102254989B (en) | 2012-09-19 |
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