CN102221416B - Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment - Google Patents

Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment Download PDF

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CN102221416B
CN102221416B CN 201110058436 CN201110058436A CN102221416B CN 102221416 B CN102221416 B CN 102221416B CN 201110058436 CN201110058436 CN 201110058436 CN 201110058436 A CN201110058436 A CN 201110058436A CN 102221416 B CN102221416 B CN 102221416B
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polishing
sensor
plurality
physical parameters
measuring
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CN 201110058436
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CN102221416A (en )
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何永勇
赵德文
路新春
雒建斌
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清华大学
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent

Abstract

The invention discloses a polishing solution physical parameter measuring apparatus and a measuring method which are used for chemically mechanical polishing equipment. The chemically mechanical polishing equipment comprises a polishing head, a rotary table, a polishing disc and a polishing pad, wherein the polishing pad is provided with a through hole. The polishing solution physical parameter measuring apparatus comprises a sensor, a transmitter and a processing unit, wherein the sensor is provided in the polishing disc and can pass through the through hole of the polishing pad to contact with the polishing solution so as to measure the physical parameters of the polishing solution, the transmitter is provided in the rotary table and is connected to the sensor to convert the measuring signal of the sensor into a standard electric signal, the processing unit is connected to the transmitter and is used to acquire the standard electric signal so as to obtain the physical parameters of the polishing solution. According to the polishing solution physical parameter measuring apparatus provided in the embodiment of the invention, measuring and obtaining the physical parameters of the polishing solution between the polishing head and the polishing pad on site can be realized. The invention also discloses chemically mechanical polishing equipment which possesses the polishing solution physical parameter measuring apparatus.

Description

抛光液物理参数测量装置、测量方法和化学机械抛光设备 Measuring physical parameters of a polishing liquid apparatus, measuring method and the chemical mechanical polishing apparatus

技术领域 FIELD

[0001] 本发明涉及一种用于化学机械抛光设备的抛光液物理参数测量装置以及利用所述抛光液物理参数测量装置测量抛光液物理参数的测量方法,本发明还涉及一种安装有所述抛光液物理参数测量装置的化学机械抛光设备。 [0001] The present invention relates to a device measuring physical parameters of a polishing liquid for chemical mechanical polishing apparatus and a method for measuring the physical parameter measuring means for measuring physical parameters of a polishing liquid with the polishing liquid, the present invention also relates to a mounted with the the polishing liquid measuring physical parameters of a chemical mechanical polishing apparatus apparatus.

背景技术 Background technique

[0002] 在集成电路制造工艺流程中,需要对晶圆表面的膜层进行平坦化抛光,以满足后续的工艺的需求,化学机械抛光(CMP)是目前普遍采用的平坦化方式。 [0002] In the integrated circuit manufacturing process, it is necessary for the film to planarize the wafer surface polishing process to meet the needs of the subsequent chemical mechanical polishing (CMP) planarization embodiment is now widely used.

[0003] 化学机械抛光的基本原理是:由抛光头和抛光盘的旋转产生抛光所需要的相对运动,晶圆放在抛光头内,抛光垫粘贴在抛光盘表面,通过抛光头对工件施加一定压力,使晶圆压在抛光垫表面,依靠晶圆和抛光垫之间的相对运动,并借助于抛光液中的磨粒实现对工件表面的精加工。 [0003] The basic principle is that the chemical mechanical polishing: polishing head produced by the rotating polishing disk and polishing required relative movement, the wafer is placed within the polishing head, a polishing pad attached to the polishing surface, the workpiece must be applied by the polishing head pressure, the wafer against the polishing pad surface, relying on the relative movement between the wafer and the polishing pad, the polishing liquid by means of abrasive particles to the workpiece surface finish achieved.

[0004] 化学机械抛光一方面需要得到较高的去除率,以提高生产效率,另一方面需要得到较高的平整度,必须将晶圆的不均匀度控制在合理范围内,否则将造成晶圆的报废。 [0004] The chemical mechanical polishing aspect require high removal rate, to improve production efficiency, and the need to obtain a high flatness, unevenness of the wafer must be controlled within reasonable limits, otherwise it will cause crystal round scrap. 为了得到较好的平整度,需要对抛光压力进行精确地控制,很多相关技术已经应用,例如区域压力控制技术。 In order to obtain better flatness, it is necessary to precisely control the polishing pressure, the related art has a lot of applications, e.g. pressure control region. 但是这种控制技术只能控制晶圆的背压,而晶圆与抛光垫之间实际的压力分布情况是未知的,目前还没有很好的手段去测量。 However, this technique can only control the back pressure control wafer, while the actual distribution of pressure between the wafer and the polishing pad is unknown, there is no good means to measure.

[0005] 由于晶圆与抛光垫的相对运动,抛光液会在接触面形成流体动压润滑或混合润滑,实际施加在晶圆背面的背压是由流体压力和接触压力共同承担的,只有知道流体的压力分布才能反算出接触压力分布。 [0005] Due to the relative motion of the wafer with the polishing pad, the polishing liquid form hydrodynamic or mixed lubrication on the contact surface, the back pressure actually applied to the backside of the wafer by the fluid pressure and the contact pressure is shared, only knows the pressure distribution of the fluid in order to calculate the counter-contact pressure distribution. 而接触压力是实际抛光过程中影响机械作用的主要因素。 The contact pressure is the main factor affecting the actual polishing process, mechanical action.

[0006] 温度对于抛光垫的物理性能,抛光液的化学性能有很大影响。 [0006] The temperature of the polishing pad on the physical properties, chemical properties of the polishing solution has a great influence. 因而温度分布情况对于化学机械抛光也会产生一定影响。 Thus the temperature distribution will have some effect on the chemical mechanical polishing.

[0007] 因此弄清楚晶圆与抛光垫之间实际的压力和温度分布情况,对于压力控制的实施和提闻晶圆的抛光质量具有重要意义。 [0007] Thus clarify the actual pressure and temperature distribution between the wafer and the polishing pad, and is important for the embodiment mentioned smell quality wafer polishing pressure control.

[0008] 到目前为止,化学机械抛光接触面的接触压力分布多采用离线测量,接触面的流体压力多基于简易实验台的模型研究,不能很好地揭示实际工况下的压力情况,对于温度的测量多采用红外的方式,不够准确。 [0008] So far, the contact pressure of the contact surface of the chemical mechanical polishing multiple off-line distribution measurement, Model simple bench fluid pressure based on a multi-contact surface, pressure is not a good indicator of the actual conditions, the temperature measurement using infrared multi-way, not accurate enough.

发明内容 SUMMARY

[0009] 本发明旨在至少解决现有技术中存在的技术问题之一。 [0009] The present invention aims to solve the technical problems of the prior art at least one present.

[0010] 为此,本发明的一个目的在于提出一种 [0010] It is therefore an object of the present invention is to propose a

[0011] 为此,本发明的一个目的在于提出一种可以在线测量并得到抛光液的物理参数的用于化学机械抛光设备的抛光液物理参数测量装置。 [0011] It is therefore an object of the present invention is to propose a measured and obtained measuring physical parameters of a polishing liquid for chemical mechanical polishing apparatus means a physical parameter of the polishing liquid.

[0012] 本发明的另一个目的在于提出一种利用所述抛光液物理参数测量装置在线测量抛光液的物理参数的测量方法。 [0012] Another object of the present invention is to propose a measuring method using a physical parameter of the slurry line measuring apparatus for measuring physical parameters of slurry. [0013] 本发明的再一个目的在于提出一种安装有所述抛光液物理参数测量装置的化学机械抛光设备。 [0013] A further object of the present invention is to provide a chemical mechanical polishing is attached to the physical parameters of the liquid polishing apparatus measuring device.

[0014] 为了实现上述目的,根据本发明第一方面的实施例提出一种用于化学机械抛光设备的抛光液物理参数测量装置,所述化学机械抛光设备包括抛光头、转台、设置在所述转台的上表面上的抛光盘和设置在所述抛光盘的上表面上且与所述抛光头相对的抛光垫,其中所述抛光垫设置有通孔,根据本发明实施例的抛光液物理参数测量装置包括:传感器,所述传感器设置在所述抛光盘内且适于通过所述抛光垫内的通孔与抛光液接触以测量所述抛光液的物理参数;变送器,所述变送器设置在所述转台内且与所述传感器相连用于将所述传感器的测量信号转换为标准电信号;和处理单元,所述处理单元与所述变送器相连用于获取所述标准电信号以得到所述抛光液的物理参数。 [0014] To achieve the above object, the proposed apparatus for measuring physical parameters polishing liquid for chemical mechanical polishing apparatus according to an embodiment of the first aspect of the present invention, the chemical mechanical polishing apparatus includes a polishing head, turret, provided the polishing platen and the turntable is provided on the upper surface on the upper surface of the polishing platen and polishing head opposite to the polishing pad, wherein the polishing pad is provided with a through hole, according to the embodiment of the physical parameters of polishing liquid of the present invention measuring apparatus comprising: a sensor disposed within said polishing platen and adapted to physical parameters through the through hole in contact with the polishing liquid in the polishing pad to measure the polishing liquid; transmitter, said transmitter the turntable is disposed within and coupled to the sensor for measuring the sensor signal into a standard electrical signal; and a processing unit, said processing unit and said converter for acquiring the standard electrical signal to obtain the physical parameters of the slurry. [0015] 根据本发明实施例的用于化学机械抛光设备的抛光液物理参数测量装置在所述抛光盘内设置所述传感器,所述传感器通过所述抛光垫上的通孔与抛光液接触,并且在化学机械抛光过程中所述传感器随着所述抛光盘一起旋转从而以扇形形式扫描整个晶圆表面,因此所述抛光液物理参数测量装置可以在线测量所述抛光头与所述抛光垫之间的抛光液的物理参数(即晶圆与所述抛光垫之间的抛光液的物理参数)。 [0015] The physical parameter measuring means a polishing liquid for chemical mechanical polishing apparatus according to an embodiment of the present invention, the sensor is disposed within said polishing platen, said polishing by the sensor via contact with the polishing pad of liquid, and in the chemical mechanical polishing process in the sensor as the polishing platen rotates together thereby scanning the entire surface of the wafer in the form of a fan, so the slurry physical parameter measuring means may measure online the polishing head and the polishing pad between physical parameters of slurry (i.e., the physical parameters of the slurry between the wafer and the polishing pad). 所述抛光液物理参数测量装置还通过设置与所述传感器相连的所述变送器以将所述传感器的测量信号转换为标准电信号,并且通过设置与所述变送器相连的所述处理单元以在线得到所述抛光液的物理参数。 Measuring the physical parameters of the slurry is provided by said transducer means further connected to the sensor, the processing to measure the sensor signal into a standard electrical signal, and is connected to the transmitter by providing line unit to obtain the physical parameters of the slurry.

[0016] 另外,根据本发明实施例的抛光液物理参数测量装置可以具有如下附加的技术特征: [0016] Further, a polishing liquid physical parameter measurement device according to an embodiment of the present invention may have the following additional technical features:

[0017] 根据本发明的一个实施例,所述转台的上表面上设有第一凹槽,所述抛光盘覆盖所述第一凹槽以限定出第一容纳腔,其特征在于,所述变送器设置在所述第一容纳腔内。 [0017] According to an embodiment of the present invention, a first recess on an upper surface of the turntable, the polishing platen covering the first receiving groove to define a first chamber, wherein said transmitter disposed in the first receiving chamber.

[0018] 根据本发明的一个实施例,所述抛光盘的上表面上设有第二凹槽,所述抛光垫覆盖所述第二凹槽以限定出第二容纳腔,其特征在于,所述传感器设置在所述第二容纳腔内且与所述通孔对应。 [0018] According to an embodiment of the present invention, the second groove is provided on the upper surface of the polishing platen, the polishing pad covering the second recess to define a second chamber, characterized by said sensor is disposed in said second chamber and corresponding to the through hole.

[0019] 根据本发明的一个实施例,所述抛光液物理参数测量装置还包括安装板,所述安装板设置在所述第二容纳腔内,所述传感器安装在所述安装板上。 [0019] According to an embodiment of the present invention, the polishing liquid physical parameter measurement device further comprises a mounting plate, the mounting plate is disposed in the second chamber, the sensor is mounted on the mounting plate. 通过在所述第二容纳腔内设置所述安装板,可以使所述传感器(特别是所述传感器为多个的时候)更方便地设置在所述第二容纳腔内。 Through the second chamber disposed in the mounting plate, the sensor can be made (especially when the plurality of sensors) more conveniently disposed in the second chamber.

[0020] 根据本发明的一个实施例,所述通孔为多个且沿所述抛光盘的径向间隔开地排列,所述传感器为多个且沿所述抛光盘的径向间隔开地排列,其中所述多个传感器与所述多个通孔对应。 [0020] spaced radially aligned with one embodiment of the present invention, a plurality of through holes along said polishing platen and in accordance with the sensor and a plurality of radially spaced apart from the polishing platen arrangement, wherein the plurality of sensors corresponding to the plurality of through-holes. 通过设置多个所述传感器可以同时在不同的位置测量晶圆和所述抛光垫之间的抛光液的物理参数,从而可以提高测量数据的密度,以便更准确地得到所述抛光液的物理参数的分布情况。 By providing a plurality of sensors may be simultaneously in the physical parameters of the slurry between the wafer and measuring the different positions the polishing pad, thereby increasing the density of the measured data, in order to more accurately obtain the physical parameters of the slurry the distribution.

[0021] 根据本发明的一个实施例,所述多个通孔沿所述抛光盘的径向等间隔地排列,所述多个传感器沿所述抛光盘的径向等间隔地排列。 [0021] According to an embodiment of the present invention, a plurality of through holes radially along said polishing platen arranged at equal intervals, said plurality of sensors along a radial direction of the polishing platen arranged at regular intervals.

[0022] 根据本发明的一个实施例,所述多个通孔沿所述抛光盘的多个径向排列,所述多个传感器沿所述抛光盘的多个径向排列成多个一维线性阵列。 A plurality of radially [0022] According to an embodiment of the present invention, a plurality of through-holes along the radial direction of the plurality of the polishing disc arrangement, the plurality of sensors are arranged along a plurality of said polishing platen a dimension a linear array. 这样可以进一步提高测量数据的密度,从而更准确地得到所述抛光液的物理参数的分布情况。 This can further increase the density of the measured data, to obtain a more accurate distribution of the physical parameters of the slurry. [0023] 根据本发明的一个实施例,所述安装板为多个,所述多个一维线性阵列对应地安装在所述多个安装板上。 [0023] According to an embodiment of the present invention, a plurality of said mounting plate, said plurality of one-dimensional linear array corresponding to the plurality of mounting plate mounted.

[0024] 根据本发明的一个实施例,所述传感器为温度传感器和/或压力传感器,所述变送器为温度变送器和/或压力变送器,其中所述温度传感器与所述温度变送器相连,所述压力传感器与所述压力变送器相连。 [0024] According to an embodiment of the present invention, the sensor is a temperature sensor and / or a pressure sensor, a temperature transmitter is a transmitter and / or pressure transmitter, wherein said temperature sensor and said temperature the transmitter is connected to the pressure sensor is connected to the pressure transmitter.

[0025] 根据本发明的一个实施例,所述处理单元包括:导电滑环,所述导电滑环的旋转部分安装到所述转台上且与所述变送器相连,其中所述导电滑环的旋转部分的旋转中心轴线与所述转台的旋转中心轴线重合;采集卡,所述采集卡与所述导电滑环的静止部分相连以采集所述标准电信号;信号转换器,所述信号转换器与所述采集卡相连以将所述标准电信号转换成数字信号;计算模块,所述计算模块与所述信号转换器相连以利用所述数字信号计算得到所述抛光液的物理参数;和显示终端,所述显示终端与所述计算模块相连用于显示所述抛光液的物理参数。 [0025] According to one embodiment of the present invention, the processing unit comprising: a conductive slip ring, rotary portion of the conductive slip ring mounted to the turntable and connected to said transducer, wherein said slip ring central axis of the rotating part of the turntable rotation center coincident with the axis; acquisition card, the acquisition card of the slip ring is connected to the stationary portion of the standard electrical signal acquisition; signal converter, the signal conversion the acquisition card is connected with the standard electrical signal to be converted into a digital signal; calculating module, a calculation module and the signal converter coupled to the digital signal using the calculated physical parameters of the slurry; and display terminal, display terminal and the physical parameters of the calculation module is connected to the slurry for display.

[0026] 根据本发明第二方面的实施例提出一种化学机械抛光设备,所述化学机械抛光设备包括:转台;抛光盘,所述抛光盘设置在所述转台的上表面上;抛光垫,所述抛光垫设置在所述抛光盘的上表面上且设置有通孔;抛光头,所述抛光头与所述抛光垫相对;抛光液物理参数测量装置,所述抛光液物理参数测量装置为根据本发明第一方面所述的抛光液物理参数测量装置,其中传感器设置在所述抛光盘内且适于通过所述抛光垫内的通孔与抛光液接触以测量所述抛光液的物理参数,变送器设置在所述转台内且与所述传感器相连用于将所述传感器的测量信号转换为标准电信号,处理单元与所述变送器相连用于获取所述标准电信号以得到所述抛光液的物理参数。 [0026] proposed a chemical mechanical polishing apparatus according to the embodiment of the second aspect of the present invention, the chemical mechanical polishing apparatus comprising: a turntable; polishing platen, a polishing disc disposed on the turntable at the upper surface; the polishing pad, the polishing pad through-hole is provided on the upper surface of the polishing platen and provided with; polishing head, the polishing head and the polishing pad opposite; measuring physical parameters of a polishing liquid means a polishing liquid is a physical parameter measurement device measuring physical parameters of a polishing liquid to the first aspect of the present invention, wherein the physical parameter sensor is disposed within said polishing platen and adapted through the through hole in contact with the polishing liquid in the polishing pad to measure a polishing liquid , the transmitter and disposed within the turntable is connected to the sensor for converting a measuring signal of the sensor into a standard electrical signal processing unit coupled to said transducer for acquiring the standard electrical signal to give the physical parameters of the polishing liquid.

[0027] 根据本发明实施例的化学机械抛光设备通过设置根据本发明第一方面所述的抛光液物理参数测量装置,从而可以在线测量并得到所述抛光头与所述抛光垫之间的抛光液的物理参数(即晶圆与所述抛光垫之间的抛光液的物理参数)。 [0027] The polishing liquid physical parameter measurement device according to a first aspect of the invention, the polishing can be obtained between the measured and the polishing head and the polishing pad chemical mechanical polishing apparatus according to an embodiment of the present invention by providing online physical parameters of the liquid (i.e., the physical parameters of the slurry between the wafer and the polishing pad). 这样,利用所述化学机械抛光设备对晶圆进行化学机械抛光可以提高晶圆的平整度。 Thus, by using the chemical mechanical polishing apparatus for chemical mechanical polishing the wafer can improve the flatness of the wafer.

[0028] 根据本发明的一个实施例,所述转台的上表面上设有第一凹槽,所述抛光盘覆盖所述第一凹槽以限定出第一容纳腔,所述变送器设置在所述第一容纳腔内。 [0028] According to an embodiment of the present invention, a first recess on an upper surface of the turntable, the polishing platen covering the first receiving groove to define a first chamber, said transducer is provided in the first receiving chamber.

[0029] 根据本发明的一个实施例,所述抛光盘的上表面上设有第二凹槽,所述抛光垫覆盖所述第二凹槽以限定出第二容纳腔,所述传感器设置在所述第二容纳腔内。 [0029] According to an embodiment of the present invention, the second groove is provided on the upper surface of the polishing platen, the polishing pad covering the second recess to define a second chamber, said sensor is provided said second chamber.

[0030] 根据本发明第三方面的实施例提出一种抛光液物理参数的测量方法,所述测量方法包括:A)在化学机械抛光过程中,利用根据权利要求1-10中任一项所述的抛光液物理参数测量装置的传感器以扇形形式扫描整个晶圆表面,并利用所述传感器测量抛光液的物理参数以得到测量信号;和B)利用变送器将所述传感器的测量信号转换为标准电信号,然后利用处理单元按照一定频率获取所述标准电信号以得到所述抛光液的物理参数。 [0030] The method for measuring physical parameters of a polishing liquid according to the present embodiment of the third aspect of the invention, the measuring method comprising: A) the chemical mechanical polishing process, the use of any one of claims 1 to 10 the polishing fluid sensor device for measuring physical parameters of said scan the entire wafer surface in the form of a fan, and a sensor measuring the physical parameters using a polishing liquid to obtain a measurement signal; and B) by using the measured transmitter signal conversion sensor standard electrical signal, and then use the processing unit acquires the standard electrical signal according to a certain frequency to obtain the physical parameters of the slurry.

[0031] 根据本发明实施例的测量方法通过利用根据本发明第一方面所述的抛光液物理参数测量装置的传感器以扇形形式扫描整个晶圆表面,从而可以在线测量并得到抛光液的物理参数。 [0031] The measurement method according to an embodiment of the present invention by using a polishing liquid physical parameter sensor device for measuring physical parameters of a first aspect of the present invention in the form of a fan-scan the entire wafer surface, can be measured and obtained polishing liquid according to .

[0032] 根据本发明的一个实施例,所述传感器为温度传感器和/或压力传感器以测量抛光液的温度和/或压力。 [0032] According to one embodiment of the present invention, the sensor is a temperature sensor and / or a pressure sensor to measure the temperature of a polishing liquid and / or pressure.

[0033] 本发明的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。 [0033] Additional aspects and advantages of the invention will be set forth in part in the description which follows, from the following description in part be apparent from, or learned by practice of the present invention.

附图说明 BRIEF DESCRIPTION

[0034] 本发明的上述和/或附加的方面和优点从结合下面附图对实施例的描述中将变得明显和容易理解,其中: [0034] The foregoing and / or other aspects and advantages of the invention will be described with reference to embodiments in conjunction with the embodiments become apparent and more readily appreciated below, wherein:

[0035] 图I是根据本发明的一个实施例的抛光液物理参数测量装置的结构示意图; [0035] FIG. I is a schematic view of the structure of a polishing liquid physical parameter measurement device according to one embodiment of the present invention;

[0036] 图2是图I的俯视图; [0036] FIG. 2 is a plan view of Figure I;

[0037] 图3是根据本发明的再一个实施例的抛光液物理参数测量装置的结构示意图; [0037] FIG. 3 is a diagram showing the structure of a polishing liquid measuring physical parameters of a device according another embodiment of the present invention;

[0038] 图4是根据本发明的又一个实施例的抛光液物理参数测量装置的结构示意图; [0038] FIG. 4 is a diagram showing still another structure of the present invention means a polishing liquid for measuring physical parameters of the embodiment;

[0039] 图5是利用根据本发明实施例的抛光液物理参数测量装置测量抛光液的物理参数的示意图。 [0039] FIG. 5 is a schematic view of a polishing liquid physical parameter measuring the physical parameters of slurry measuring device of the embodiment of the present invention is utilized.

[0040] 附图标记说明: [0040] REFERENCE NUMERALS:

[0041] 抛光头10、晶圆11、转台20、第一容纳腔21、抛光盘30、第二容纳腔31、抛光垫40、通孔41、传感器50、变送器60、处理单元70、导电滑环71、采集卡72、显示终端73、安装板80。 [0041] The polishing head 10, the wafer 11, the turntable 20, a first receiving chamber 21, the polishing platen 30, second chamber 31, the polishing pad 40, the through hole 41, a sensor 50, transmitter 60, a processing unit 70, slip ring 71, the acquisition card 72, display terminal 73, the mounting plate 80.

具体实施方式 detailed description

[0042] 下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。 [0042] Example embodiments of the present invention is described in detail below, exemplary embodiments of the embodiment shown in the accompanying drawings, wherein same or similar reference numerals designate the same or similar elements or elements having the same or similar functions. 下面通过参考附图描述的实施例是示例性的,仅用于解释本发明,而不能理解为对本发明的限制。 By following with reference to the embodiments described are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0043] 在本发明的描述中,需要理解的是,术语“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底” “内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。 [0043] In the description of the present invention, it is to be understood that the term "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical straight "," horizontal "," top "," bottom "," inner ", the orientation or positional relationship of" outside "or the like indicating a positional relationship of the orientation shown in the accompanying drawings, for convenience of description only and the present invention is to simplify the description , not indicate or imply that the device or element referred to must have a particular orientation, the orientation of a particular configuration and operation, can not be construed as limiting the present invention.

[0044] 此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性。 [0044] In addition, the terms "first", "second" are used for descriptive purposes only, not to be construed to indicate or imply relative importance.

[0045] 在本发明的描述中,除非另有规定和限定,需要说明的是,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是机械连接或电连接,也可以是两个元件内部的连通,可以是直接相连,也可以通过中间媒介间接相连,对于本领域的普通技术人员而言,可以根据具体情况理解上述术语的具体含义。 [0045] In the present description, unless otherwise specified or limited, it is noted that the term "mounted," "connected to", "connected" are to be broadly understood, for example, it may be a mechanical or electrical connection, It may be in communication the interior of the two elements, may be directly connected, can also be connected indirectly through an intermediary, to those of ordinary skill in the art, to be understood that the specific meanings depending on the circumstances.

[0046] 下面参照图1-4描述根据本发明实施例的用于化学机械抛光设备的抛光液物理参数测量装置。 Means measuring physical parameters of a polishing liquid [0046] embodiments described below with reference to FIGS. 1-4 embodiment of the present invention for chemical mechanical polishing apparatus. 如图1-4所示,所述化学机械抛光设备包括抛光头10、转台20、设置在转台10的上表面上的抛光盘30和设置在抛光盘30的上表面上且与抛光头10相对的抛光垫40,其中抛光垫40设置有通孔41。 Polishing platen 30 is provided and shown in Figures 1-4, the chemical mechanical polishing apparatus includes a polishing head 10, the turntable 20 provided on the upper surface of the turntable 10 and the polishing head 10 relative to the upper surface of the polishing platen 30 40 polishing pad, wherein the polishing pad 40 is provided with a through hole 41. 根据本发明实施例的抛光液物理参数测量装置包括传感器50、变送器60和处理单兀70。 The polishing liquid physical parameter measurement device according to an embodiment of the present invention includes a sensor 50, transmitter 60 and processing unit 70 Wu. 传感器50设置在抛光盘30内且适于通过抛光垫40内的通孔41与抛光液接触以测量所述抛光液的物理参数。 Sensor 50 is disposed in the polishing platen 30 and adapted to measure a physical parameter of the polishing pad of the polishing liquid through the through hole 4041 in contact with the polishing liquid. 变送器60设置在转台20内且与传感器50相连用于将传感器50的测量信号转换为标准电信号。 Transmitter 60 is provided within the turntable 20 and is connected to sensor 50 for converting a measuring signal sensor 50 is a standard electrical signal. 处理单元70与变送器60相连用于获取所述标准电信号以得到所述抛光液的物理参数。 The processing unit 70 is connected to the transmitter 60 for obtaining the physical parameters of the standard electrical signal to obtain a polishing liquid. [0047] 根据本发明实施例的用于化学机械抛光设备的抛光液物理参数测量装置在抛光盘30内设置传感器50,传感器50通过抛光垫40上的通孔41与抛光液接触,并且在化学机械抛光过程中传感器50随着抛光盘30 —起旋转从而以扇形形式扫描整个晶圆表面,因此所述抛光液物理参数测量装置可以在线测量抛光液的物理参数。 [0047] The physical parameter measuring means a polishing liquid for chemical mechanical polishing apparatus according to an embodiment of the present invention, a sensor 50 in the polishing platen 30, a sensor pad 50 through hole 41 into contact with the polishing liquid 40 by polishing, and chemical mechanical polishing with the polishing platen sensor 50 30-- rotates together thereby scanning the entire surface of the wafer in the form of a fan, so the slurry physical parameter measuring means may measure physical parameters of the slurry line. 所述抛光液物理参数测量装置还通过设置与传感器50相连的变送器60以将传感器50的测量信号转换为标准电信号,并且通过设置与变送器60相连的处理单元70以在线得到所述抛光液的物理参数。 Measuring the physical parameters of the slurry through the transmitter apparatus 60 is connected to the sensor 50 is provided to measure the signal into a standard electrical signal transducer 50, and the processing unit is provided by the transmitter 60 is connected to line 70 to obtain said physical parameters of the slurry.

[0048] 在本发明的一些实施例中,转台20的上表面上可以设置有第一凹槽,抛光盘30可以覆盖所述第一凹槽以限定出第一容纳腔21,变送器60可以设置在第一容纳腔21内。 [0048] In some embodiments of the present invention, the turntable may be provided with a first recess 20 on the upper surface of the polishing platen 30 may cover the first receiving groove to define a first chamber 21, the transmitter 60 It may be disposed in the first receiving chamber 21.

[0049] 如图1-4所示,在本发明的一些实施例中,通孔41可以是多个且沿抛光盘30的径向间隔开地排列,且传感器50可以是多个且沿抛光盘30的径向间隔开地排列,其中多个传感器50可以与多个通孔41对应。 [0049] As shown in Figure 1-4, in some embodiments of the present invention, the through hole 41 may be a plurality of radially aligned and spaced apart along the polishing platen 30 and the sensor 50 may be along a plurality of Parabolic and the optical disc 30 spaced radially arranged, wherein the plurality of sensors 50 may correspond to a plurality of through-holes 41. 也就是说,传感器50的数量和位置分别与通孔41的数量和位置相对应。 That is, the number and position sensor 50 are respectively the number and position corresponding to the through hole 41. 通过设置多个传感器50可以同时在不同的位置测量晶圆11和抛光垫40之间的抛光液的物理参数,从而可以提高测量数据的密度,以便更准确地得到所述抛光液的物理参数的分布情况。 By providing a plurality of sensor pads 50 may be simultaneously physical parameters of the slurry 40 between the measurements at different locations of the wafer 11 and polishing, thereby increasing the density of the measured data, in order to more accurately obtain the physical parameters of the slurry of Distribution. 在本发明的一个具体示例中,多个传感器50可以沿抛光盘30的径向间隔开地排列成一个一维线性阵列。 In one specific example of the present invention, the plurality of sensors 50 may be optical disk 30 radially spaced apart along the polishing arranged a one-dimensional linear array. 具体地,多个通孔41可以沿抛光盘30的径向等间隔地排列,且多个传感器50可以沿抛光盘30的径向等间隔地排列,其中多个传感器50可以与多个通孔41对应。 Specifically, a plurality of through-holes 41 may be parabolic radial direction of optical disk 30 arranged at equal intervals, and a plurality of sensors 50 may be optical disk 30 radially arranged at equal intervals along the throw, wherein the plurality of sensors may be associated with a plurality of through-holes 50 41 corresponds.

[0050] 在本发明的一些示例中,传感器50可以是温度传感器和/或压力传感器,变送器60可以是温度变送器和/或压力变送器,其中所述温度传感器与所述温度变送器相连,所述压力传感器与所述压力变送器相连。 [0050] In some examples of the present invention, the sensor 50 may be a temperature sensor and / or a pressure sensor, a temperature transmitter 60 may be a transmitter and / or pressure transmitter, wherein said temperature sensor and said temperature the transmitter is connected to the pressure sensor is connected to the pressure transmitter. 在本发明的一个具体示例中,传感器50可以是温度传感器且可以是多个,所述多个温度传感器可以沿抛光盘30的径向间隔开地排列成一个一维线性阵列。 In one specific example of the present invention, the sensor may be a temperature sensor 50 may be a plurality and the plurality of spaced apart temperature sensors may be arranged in a radial array of one-dimensional linear polishing platen 30. 在本发明的另一个具体示例中,传感器50可以是压力传感器且可以是多个,所述多个压力传感器可以沿抛光盘30的径向间隔开地排列成一个一维线性阵列。 In another specific example of the present invention, the sensor 50 may be a pressure sensor and may be a plurality, the plurality of pressure sensors may be spaced apart arranged in an array of one-dimensional linear polishing platen 30 in the radial direction. 具体地,传感器50可以是多个温度传感器和多个压力传感器,所述多个温度传感器和所述多个压力传感器可以分别沿抛光盘30的径向间隔开地排列成一个一维温度传感器线性阵列和一个一维压力传感器线性阵列以同时测量抛光液的温度和压力。 In particular, the sensor 50 may be a plurality of temperature sensors and a plurality of pressure sensors, temperature sensors and said plurality of said plurality of pressure sensors may each optical disk 30 radially spaced along parabolic arranged a one-dimensional linear temperature sensor a one-dimensional array and a linear array of pressure sensors to simultaneously measure the temperature and pressure of the polishing liquid.

[0051] 如图4所示,在本发明的一个实施例中,多个通孔41可以沿抛光盘30的多个径向排列,且多个传感器50可以沿抛光盘30的多个径向排列成多个一维线性阵列。 [0051] As shown in Figure 4, in one embodiment of the present invention, a plurality of through-holes 41 may be along a plurality of the polishing platen 30 are arranged radially, and a plurality of sensors 50 may be optical disk 30 along a plurality of radially throwing arranged in a plurality of one-dimensional linear array. 这样可以进一步提高测量数据的密度,从而更准确地得到所述抛光液的物理参数的分布情况。 This can further increase the density of the measured data, to obtain a more accurate distribution of the physical parameters of the slurry. 其中,所述一维线性阵列可以包括一个传感器50,也可以包括多个传感器50。 Wherein said one-dimensional linear array may comprise a sensor 50, 50 may also include a plurality of sensors. 可以是多个温度传感器沿抛光盘30的多个径向排列成多个一维温度传感器线性阵列,也可以是多个压力传感器沿抛光盘30的多个径向排列成多个一维压力传感器线性阵列,还可以是多个温度传感器和多个压力传感器沿抛光盘30的多个径向排列成多个一维温度传感器线性阵列和多个一维压力传感器线性阵列以同时测量抛光液的温度和压力。 May be a plurality of radially along the plurality of temperature sensors 30 arranged in a plurality of polishing an optical disk of one-dimensional linear array of temperature sensors, pressure sensors may be a plurality of radial direction of the polishing platen 30, a plurality of one-dimensionally arranged plurality of pressure sensors a linear array, a plurality of temperature sensors may also be a plurality of pressure sensors and a plurality of radial direction of the polishing platen 30 arranged in a plurality of one-dimensional linear array of temperature sensors and a plurality of one-dimensional linear array of pressure sensors to measure the temperature of the polishing liquid simultaneously and pressure. 具体地,所述多个一维线性阵列可以均匀地设置在抛光盘30内,即所述多个一维线性阵列可以等角度地设置在抛光盘30内,相邻两个所述一维线性阵列间隔的角度(例如90度)可以相同。 In particular, the plurality of one-dimensional linear array may be uniformly disposed in the polishing platen 30, i.e., a plurality of one-dimensional linear arrays may be equiangularly disposed in the polishing platen 30, the two adjacent one-dimensional linear an angle (e.g. 90 degrees) may be the same array spacing.

[0052] 在本发明的一些示例中,抛光盘30可以设置有安装孔,传感器50可以安装在所述安装孔内。 [0052] In some examples of the present invention, the polishing platen 30 may be provided with a mounting hole, the sensor 50 may be mounted in the mounting hole. 当传感器50为一个时,可以设置一个所述安装孔。 When a sensor 50, a mounting hole may be provided. 当传感器50为多个时,可以设置多个所述安装孔,传感器50可以对应地安装在所述安装孔内。 When the sensor 50 is a plurality, the plurality of mounting holes may be provided, it may correspond to the sensor 50 mounted in the mounting hole. [0053] 如图I所示,在本发明的一些实施例中,抛光盘30的上表面上可以设置有第二凹槽,抛光垫40可以覆盖所述第二凹槽以限定出第二容纳腔31,传感器50可以设置在第二容纳腔31内。 [0053] FIG I, in some embodiments of the present invention may be provided on the upper surface of the polishing platen has a second recess 30, the polishing pad 40 may cover the second recess to define a second receiving chamber 31, the sensor 50 may be disposed within the second chamber 31. 当传感器50的数量较多时,通过在抛光盘30的上表面上设置所述第二凹槽,可以更方便地设置传感器50。 If the number of sensors 50, through the second groove is provided on the upper surface of the polishing platen 30, you can more easily set the sensor 50.

[0054] 在本发明的一个具体示例中,所述抛光液物理参数测量装置还可以包括安装板80,安装板80可以设置在第二容纳腔31内,传感器50可以安装在安装板80上。 [0054] In one specific example of the present invention, the slurry may further physical parameter measurement device 80 includes a mounting plate, the mounting plate 80 may be disposed within the second chamber 31, the sensor 50 may be mounted on the mounting plate 80. 通过在第二容纳腔31内设置安装板80,可以进一步便于传感器50 (特别是传感器50为多个的时候)设置在第二容纳腔31内,并且可以使多个传感器50更方便地和准确地沿抛光盘30的径向间隔开地排列。 By providing the mounting plate 31 within the second receiving chamber 80, the sensor 50 can be further facilitated (especially when a plurality of sensor 50) is disposed within the second chamber 31, and a plurality of sensors 50 may be more easily and accurately along polishing platen 30 are arranged radially spaced apart. 具体地,安装板80可以是长条形,且所述长条形的两端为圆弧状,从而可以与第二容纳腔31的内壁相配合。 Specifically, the mounting plate 80 may be elongated, and both ends of the elongated arc shape, which can cooperate with the inner wall of the second chamber 31.

[0055] 在本发明的一个实施例中,安装板80可以是多个,所述多个一维线性阵列可以对应地安装在多个安装板80上,即一个所述一维线性阵列可以安装在一个安装板80上。 [0055] In one embodiment of the present invention, the mounting plate 80 may be a plurality, the plurality of one-dimensional linear arrays may be mounted on a corresponding plurality of mounting plate 80, i.e. a one-dimensional linear array may be mounted in a mounting plate 80.

[0056] 如图I所示,在本发明的一些实施例中,处理单元70可以包括导电滑环71、采集卡72、信号转换器、计算模块和显示终端73。 [0056] FIG I, in some embodiments of the present invention, the processing unit 70 may include a slip ring 71, the acquisition card 72, a signal converter, a calculation module 73, and a display terminal. 导电滑环71的旋转部分可以安装到转台20上且可以与变送器60相连,导电滑环71的旋转部分的旋转中心轴线与转台20的旋转中心轴线重合。 Slip ring rotating portion 71 may be mounted onto the turntable 20 and may be connected to the transmitter 60, and the slip rotation center axis of rotation coincides with the central axis of rotation of the turntable 20 of the ring portion 71. 这样,导电滑环71的旋转部分可以随着转台20—起旋转。 Thus, the slip ring 71 can be rotating portion 20 rotates together with the turntable. 采集卡72可以与导电滑环71的静止部分相连以采集所述标准电信号。 Acquisition card 72 may slip ring 71 is connected to a stationary part of the standard electrical signal acquisition. 所述信号转换器可以与采集卡72相连以将所述标准电信号转换成数字信号。 The signal converter may be connected to the acquisition card 72 to convert the electrical signal into a digital signal standard. 所述计算模块可以与所述信号转换器相连以利用所述数字信号计算得到所述抛光液的物理参数。 The calculation module can be connected to the signal converter to a digital signal using the calculated physical parameter of the polishing liquid. 显示终端73可以与所述计算模块相连用于显示所述抛光液的物理参数。 Display terminal 73 can be calculated with the physical parameters of the slurry is connected to a module for displaying. 具体地,显示终端73可以是已有的显示器。 Specifically, the display terminal 73 may be a conventional display. 在本发明的一个具体示例中,可以利用计算机与采集卡72相连,且所述计算机具有所述信号转换器、所述计算模块和显示终端73。 In one specific example of the present invention may be utilized with the acquisition card connected to the computer 72, the computer and having the signal converter, the computing module 73 and a display terminal.

[0057] 下面参照图I描述根据本发明实施例的化学机械抛光设备。 [0057] Figure I below described chemical mechanical polishing apparatus according to embodiments of the present invention with reference to. 如图I所示,根据本发明实施例的化学机械抛光设备包括转台20、抛光盘30、抛光垫40、抛光头10和抛光液物理参数测量装置。 As shown in FIG. I, the chemical mechanical polishing apparatus according to an embodiment of the present invention comprises a turntable 20, the polishing platen 30, a polishing pad 40, 10 and a polishing liquid means a polishing head for measuring physical parameters. 抛光盘30设置在转台20的上表面上,抛光垫40设置在抛光盘30的上表面上且设置有通孔,抛光头10与抛光垫40相对。 Polishing platen 30 is provided on the turntable 20 of the upper surface of the polishing pad 40 disposed on the upper surface of the polishing platen 30 and is provided with a through hole, the polishing head 10 and the polishing pad 40 opposite. 所述抛光液物理参数测量装置为上述的抛光液物理参数测量装置。 The polishing liquid is a physical parameter measuring means for measuring physical parameters described above means a polishing liquid. 其中,传感器50设置在抛光盘30内且适于通过抛光垫40内的通孔41与抛光液接触以测量所述抛光液的物理参数,变送器60设置在转台20内且与传感器50相连用于将传感器50的测量信号转换为标准电信号,处理单元70与变送器60相连用于获取所述标准电信号以得到所述抛光液的物理参数。 Wherein the sensor 50 is disposed in the polishing platen 30 and adapted to measure a physical parameter of the polishing pad by the polishing liquid through hole in contact with the polishing liquid 40 41, transmitter 60 is provided on the turntable 50 and is connected to the sensor 20 It means for measuring signal into a standard electrical signal sensor 50, processing unit 70 is connected to the transmitter 60 for acquiring the standard electrical signal to obtain the physical parameters of the slurry.

[0058] 根据本发明实施例的化学机械抛光设备通过设置所述抛光液物理参数测量装置,从而可以在线测量并得到晶圆11与抛光垫40之间的抛光液的物理参数。 [0058] The chemical mechanical polishing apparatus according to embodiments of the present invention by providing the slurry physical parameter measurement device, can be measured and obtained physical parameters of the wafer 11 and the polishing liquid between the polishing pad 40. 这样,利用所述化学机械抛光设备对晶圆11进行化学机械抛光可以提高晶圆11的平整度。 Thus, by using the chemical mechanical polishing apparatus for chemical mechanical polishing of the wafer 11 can improve the flatness of the wafer 11.

[0059] 在本发明的一个具体示例中,转台20的上表面上可以设置有第一凹槽,抛光盘30可以覆盖所述第一凹槽以限定出第一容纳腔21,变送器60可以设置在第一容纳腔21内。 [0059] In one specific example of the present invention, the turntable may be provided with a first recess 20 on the upper surface of the polishing platen 30 may cover the first receiving groove to define a first chamber 21, the transmitter 60 It may be disposed in the first receiving chamber 21. 在本发明的另一个具体示例中,如图I所示,抛光盘30的上表面上可以设置有第二凹槽,抛光垫40可以覆盖所述第二凹槽以限定出第二容纳腔31,传感器50可以设置在第二容纳腔31内。 In another specific example of the present invention, as shown in FIG. I, may be provided with a second recess 30 on the upper surface of the polishing platen, the polishing pad 40 may cover the second recess to define a second chamber 31 the sensor 50 may be disposed within the second chamber 31. 当传感器50的数量较多时,通过在抛光盘30的上表面上设置所述第二凹槽,可以更方便地设置传感器50。 If the number of sensors 50, through the second groove is provided on the upper surface of the polishing platen 30, you can more easily set the sensor 50. [0060] 下面参照图5描述根据本发明实施例的抛光液物理参数的测量方法。 [0060] The following describes the measurement method of the physical parameters of the polishing solution of Example 5 of the present invention with reference to FIG. 如图5所示,根据本发明实施例的所述测量方法包括: 5, according to the measurement method of an embodiment of the present invention comprises:

[0061] A)在化学机械抛光过程中,利用上述的抛光液物理参数测量装置的传感器50以扇形形式扫描整个晶圆表面,并利用传感器50测量抛光液的物理参数以得到测量信号;和 [0061] A) In the chemical mechanical polishing process, the polishing solution using the sensor of physical parameters of the above-described measuring device 50 scans the entire surface of the wafer in the form of a fan, and a sensor 50 measuring a physical parameter using a polishing liquid to obtain a measurement signal; and

[0062] B)利用变送器60将传感器50的测量信号转换为标准电信号,然后利用处理单元70按照一定频率获取所述标准电信号以得到所述抛光液的物理参数。 [0062] B) using a transmitter 60 converts the measurement signal of the sensor 50 is a standard electrical signal, and then use the processing unit 70 acquires the electrical signal in accordance with a frequency standard to obtain the physical parameters of the slurry.

[0063] 具体地,如图5所示,Rj为传感器50的径向位置,j为传感器50的编号,i为物理参数测量数据的采集角度位置的编号。 [0063] Specifically, as shown in Figure 5, Rj radial position sensor 50, j is the number sensor 50, the angular position number i is acquired physical parameter measurement data. 根据需要控制采集卡72的采样频率,即可以控制相邻两次采集的角度位置间隔。 The need to control the sampling frequency acquisition card 72, which can control the angular position of the interval between two adjacent collection. 传感器50随着抛光盘30 —起旋转,以使传感器50以扇形的形式扫过整个晶圆表面,这样可以得到晶圆11与抛光垫40的整个接触面的抛光液的物理参数(例如温度和压力)的分布情况。 50 as the polishing platen sensor 30 - from rotating, so that the sensor 50 sweeps across the wafer surface in the form of a fan, so that the physical parameters of the slurry can be obtained a wafer with the polishing pad 11 the entire contact surface 40 (e.g., temperature and pressure) of the distribution. 例如,传感器50的数量为n个,物理参数测量数据采集的次数为m次,则传感器50随着抛光盘30旋转一周可以得到mXn个数据。 For example, the number of sensors 50 is n, the number of physical parameters for the acquired measurement data m times, the revolution sensor 50 with the polishing disk 30 can be mXn data. 如图5所示,在i = I的位置处开始采集距离测量数据,在i = m的位置处结束采集距离测量数据。 As shown in FIG. 5, distance measurement data acquisition starts at the I i = position, ends at i = distance measurement data acquired at the position of m. 其中,可以利用相应的传感器来测量抛光液的某一物理参数。 Wherein a certain physical parameters may be measured using a polishing liquid corresponding sensor. 例如,利用温度传感器来测量抛光液的温度,或者利用压力传感器来测量抛光液的压力,或者利用温度传感器和压力传感器来测量抛光液的温度和压力。 For example, to measure the temperature of slurry, or by the pressure sensor to measure the pressure of slurry, or by temperature and pressure sensors to measure the temperature and pressure of the polishing liquid by the temperature sensor.

[0064] 根据本发明实施例的用于化学机械抛光设备的抛光液物理参数测量装置可以在线测量并得到抛光头10与抛光垫40之间的抛光液的物理参数。 [0064] obtained may be measured and the polishing head 10 and the physical parameters of the polishing liquid between the polishing pad 40 means measuring physical parameters of a polishing liquid for chemical mechanical polishing apparatus according to an embodiment of the present invention is online. 这样可以利用安装有所述抛光液物理参数测量装置的化学机械抛光设备获得更高的晶圆11的平整度。 This is mounted by using the polishing liquid physical parameter measuring device to obtain a chemical mechanical polishing apparatus flatness of the wafer 11 is higher.

[0065] 在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。 [0065] In the description of the present specification, reference to the term "one embodiment," "some embodiments", "an example", "a specific example", or "some examples" means that a description of the exemplary embodiment or embodiments described a particular feature, structure, material, or characteristic is included in at least one embodiment of the present invention, embodiments or examples. 在本说明书中,对上述术语的示意性表述不一定指的是相同的实施例或示例。 In the present specification, a schematic representation of the above terms necessarily referring to the same embodiment or example. 而且,描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。 Furthermore, the particular features, structures, materials, or characteristics described embodiments or examples may be at any one or more in a proper manner.

[0066] 尽管已经示出和描述了本发明的实施例,本领域的普通技术人员可以理解:在不脱离本发明的原理和宗旨的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由权利要求及其等同物限定。 [0066] While there has been illustrated and described embodiments of the present invention, those of ordinary skill in the art can be appreciated: that various changes may be made to these embodiments without departing from the principles and spirit of the invention, modifications, substitutions and modifications, the scope of the present invention is defined by the claims and their equivalents.

Claims (14)

  1. 1. 一种用于化学机械抛光设备的抛光液物理参数测量装置,所述化学机械抛光设备包括抛光头、转台、设置在所述转台的上表面上的抛光盘和设置在所述抛光盘的上表面上且与所述抛光头相对的抛光垫,其中所述抛光垫设置有通孔,所述抛光盘的上表面上设有第二凹槽,所述抛光垫覆盖所述第二凹槽以限定出第二容纳腔,其特征在于,所述抛光液物理参数测量装置包括: 传感器,所述传感器设置在所述抛光盘内且适于通过所述抛光垫内的通孔与抛光液接触以测量所述抛光液的物理参数,所述传感器设置在所述第二容纳腔内且与所述通孔对应; 变送器,所述变送器设置在所述转台内且与所述传感器相连用于将所述传感器的测量信号转换为标准电信号;和处理单元,所述处理单元与所述变送器相连用于获取所述标准电信号以得到所述抛光液的物理参 A physical parameter measuring means a polishing liquid for chemical mechanical polishing apparatus, the chemical mechanical polishing apparatus includes a polishing head, the turntable, the turntable disposed on said polishing disc and disposed on the surface of the polishing platen the upper surface and opposite to said polishing head and a polishing pad, wherein the polishing pad is provided with a through hole provided with a second recess of the polishing the upper surface of the optical disc, the second recess covering the polishing pad to define a second chamber, wherein the slurry physical parameter measurement device comprising: a sensor disposed within the through hole and adapted polishing platen and the polishing liquid through said polishing pad in contact with to measure the physical parameters of the slurry, the sensor is disposed in said second chamber and corresponding to the through hole; transmitter, said transmitter disposed within the sensor and the turntable physical parameter and a processing unit, said processing unit and said converter for acquiring the standard electrical signal to obtain the polishing liquid; for converting a measuring signal is connected to the sensor into a standard electrical signal .
  2. 2.根据权利要求I所述的用于化学机械抛光设备的抛光液物理参数测量装置,所述转台的上表面上设有第一凹槽,所述抛光盘覆盖所述第一凹槽以限定出第一容纳腔,其特征在于,所述变送器设置在所述第一容纳腔内。 According to claim I measuring physical parameters of a polishing liquid means a chemical mechanical polishing apparatus according to a turntable provided with a first groove surface, the polishing platen covering the first recess to define the first receiving chamber, wherein said transmitter disposed in the first receiving chamber.
  3. 3.根据权利要求I所述的用于化学机械抛光设备的抛光液物理参数测量装置,其特征在于,还包括安装板,所述安装板设置在所述第二容纳腔内,所述传感器安装在所述安装板上。 The physical parameters measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim I, characterized by further comprising a mounting plate, the mounting plate is disposed in the second chamber, the sensor is mounted the mounting plate.
  4. 4.根据权利要求3所述的用于化学机械抛光设备的抛光液物理参数测量装置,所述通孔为多个且沿所述抛光盘的径向间隔开地排列,其特征在于,所述传感器为多个且沿所述抛光盘的径向间隔开地排列,其中多个所述传感器与多个所述通孔对应。 The physical parameters measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim 3, the plurality of through holes are arranged and spaced apart radially of the polishing disc, characterized in that said a plurality of sensors and radially of the polishing disc are arranged spaced apart, wherein said plurality of sensors corresponding to the plurality of the through-hole.
  5. 5.根据权利要求4所述的用于化学机械抛光设备的抛光液物理参数测量装置,多个所述通孔沿所述抛光盘的径向等间隔地排列,其特征在于,多个所述传感器沿所述抛光盘的径向等间隔地排列。 The physical parameters measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim 4, a plurality of through-holes along the radial direction of the polishing disc arranged at equal intervals, wherein a plurality of said the polishing platen sensor along radially arranged at regular intervals.
  6. 6.根据权利要求4所述的用于化学机械抛光设备的抛光液物理参数测量装置,多个所述通孔沿所述抛光盘的多个径向排列,其特征在于,多个所述传感器沿所述抛光盘的多个径向排列成多个一维线性阵列。 The physical parameters measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim 4, a plurality of through-holes in said plurality of said polishing disc arranged radially, wherein the plurality of sensors a plurality of radial direction of the polishing platen arranged in a plurality of one-dimensional linear array.
  7. 7.根据权利要求6所述的用于化学机械抛光设备的抛光液物理参数测量装置,其特征在于,所述安装板为多个,所述多个一维线性阵列对应地安装在多个所述安装板上。 The physical parameters measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim 6, wherein a plurality of said mounting plate, said plurality of one-dimensional linear array mounted on a corresponding plurality of said mounting plate.
  8. 8.根据权利要求1-7中任一项所述的用于化学机械抛光设备的抛光液物理参数测量装置,其特征在于,所述传感器为温度传感器和/或压力传感器,所述变送器为温度变送器和/或压力变送器,其中所述温度传感器与所述温度变送器相连,所述压力传感器与所述压力变送器相连。 8. The physical quantity measuring means a polishing liquid for chemical mechanical polishing apparatus according to any one of the 1-7 claims, wherein said sensor is a temperature sensor and / or a pressure sensor, a transmitter transmitter temperature and / or pressure transmitter, wherein said temperature sensor and the temperature transmitter is connected to the pressure sensor is connected to the pressure transmitter.
  9. 9.根据权利要求I所述的用于化学机械抛光设备的抛光液物理参数测量装置,其特征在于,所述处理单元包括: 导电滑环,所述导电滑环的旋转部分安装到所述转台上且与所述变送器相连,其中所述导电滑环的旋转部分的旋转中心轴线与所述转台的旋转中心轴线重合; 采集卡,所述采集卡与所述导电滑环的静止部分相连以采集所述标准电信号; 信号转换器,所述信号转换器与所述采集卡相连以将所述标准电信号转换成数字信号; 计算模块,所述计算模块与所述信号转换器相连以利用所述数字信号计算得到所述抛光液的物理参数;和显示终端,所述显示终端与所述计算模块相连用于显示所述抛光液的物理参数。 9. The physical quantity measuring means a polishing liquid for chemical mechanical polishing apparatus according to claim I, wherein the processing unit comprises: a conductive slip ring, the slip ring rotating portion mounted to the turret on and connected to said transducer, wherein the central axis of the slip ring of the rotating turntable portion coincident with the central axis of rotation; acquisition card, the acquisition card of the conductive slip ring connected to the stationary part in acquiring the standard electrical signal; a signal converter, and the signal converter is connected to the acquisition card of the standard electrical signal into a digital signal; calculating module, said calculation module coupled to the signal converter and calculated using the digital signal of the physical parameters of polishing liquid; and a display terminal, display terminal and the physical parameters of the calculation module is connected to the slurry for display.
  10. 10. 一种化学机械抛光设备,其特征在于,包括: 转台; 抛光盘,所述抛光盘设置在所述转台的上表面上; 抛光垫,所述抛光垫设置在所述抛光盘的上表面上且设置有通孔; 抛光头,所述抛光头与所述抛光垫相对; 抛光液物理参数测量装置,所述抛光液物理参数测量装置为根据权利要求1-9中任一项所述的抛光液物理参数测量装置,其中传感器设置在所述抛光盘内且适于通过所述抛光垫内的通孔与抛光液接触以测量所述抛光液的物理参数,变送器设置在所述转台内且与所述传感器相连用于将所述传感器的测量信号转换为标准电信号,处理单元与所述变送器相连用于获取所述标准电信号以得到所述抛光液的物理参数。 10. A chemical mechanical polishing apparatus, comprising: a turntable; polishing platen, a polishing disc disposed on the upper surface of the turntable; polishing pad disposed on the upper surface of the polishing platen of the polishing pad and a through hole is provided on; polishing head, the polishing head opposite to the polishing pad; measuring physical parameters of a polishing liquid means a polishing liquid is a physical parameter measuring apparatus according to any one of the claims 1-9 the polishing liquid physical parameter measuring means, wherein the sensor is disposed within said polishing platen and adapted through the through hole in contact with the polishing liquid in the polishing pad to measure the physical parameters of the slurry, and the transmitter provided at the turntable within and coupled to the sensor for measuring the sensor signal into a standard electrical signal, and a processing unit coupled to said transducer for acquiring the standard electrical signal to obtain the physical parameters of the slurry.
  11. 11.根据权利要求10所述的化学机械抛光设备,其特征在于,所述转台的上表面上设有第一凹槽,所述抛光盘覆盖所述第一凹槽以限定出第一容纳腔,所述变送器设置在所述第一容纳腔内。 11. The chemical mechanical polishing apparatus according to claim 10, characterized in that the turntable is provided with a first groove surface, the polishing platen covering the first receiving groove to define a first chamber a transmitter disposed in the first receiving chamber.
  12. 12.根据权利要求10或11所述的化学机械抛光设备,其特征在于,所述抛光盘的上表面上设有第二凹槽,所述抛光垫覆盖所述第二凹槽以限定出第二容纳腔,所述传感器设置在所述第二容纳腔内。 12. The chemical mechanical polishing apparatus according to claim 10 or claim 11, characterized in that the second recess is provided on the upper surface of the polishing platen, the second recess covering the polishing pad to define a first two receiving chamber, said sensor is disposed in the second chamber.
  13. 13. —种抛光液物理参数的测量方法,其特征在于,所述测量方法包括: A)在化学机械抛光过程中,利用根据权利要求4-7中任一项所述的抛光液物理参数测量装置的传感器以扇形形式扫描整个晶圆表面,并利用所述传感器测量抛光液的物理参数以得到测量信号;和B)利用变送器将所述传感器的测量信号转换为标准电信号,然后利用处理单元按照一定频率获取所述标准电信号以得到所述抛光液的物理参数。 13. - The method of measuring a physical parameter kind polishing liquid, characterized in that said measuring method comprises: A) the chemical mechanical polishing process using the polishing liquid measuring physical parameters of any one of claims 4-7 sensor means scans the entire surface of the wafer in the form of a fan, and a sensor measuring the physical parameters using the polishing liquid to obtain a measurement signal; and B) transmitters using the sensor measurement signal into a standard electrical signal, and then use the processing unit acquires the standard electrical signal according to a certain frequency to obtain the physical parameters of the slurry.
  14. 14.根据权利要求13所述的测量方法,其特征在于,所述传感器为温度传感器和/或压力传感器以测量抛光液的温度和/或压力。 14. A measuring method according to claim 13, wherein said sensor is a temperature sensor and / or a pressure sensor to measure the temperature of a polishing liquid and / or pressure.
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