CN102212874A - Method for preparing sapphire conical optical fibers - Google Patents
Method for preparing sapphire conical optical fibers Download PDFInfo
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- CN102212874A CN102212874A CN 201110139624 CN201110139624A CN102212874A CN 102212874 A CN102212874 A CN 102212874A CN 201110139624 CN201110139624 CN 201110139624 CN 201110139624 A CN201110139624 A CN 201110139624A CN 102212874 A CN102212874 A CN 102212874A
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Abstract
The invention discloses a method for preparing sapphire conical optical fibers, which comprises the following steps of: melting the top end of a sapphire crystal source rod with a circular cross section to form a stable melting zone by using a laser heating base process growth device, and dropping sapphire optical fiber seed crystals into the melting zone at the top end of the sapphire crystal source rod to form a sapphire optical fiber growth melting zone; pulling the sapphire optical fiber seed crystals, feeding the sapphire crystal source rod upwards until the source rod grows stably to form the thick end of the sapphire conical optical fibers; changing the pulling speed of the sapphire optical fiber seed crystals under the condition that the feed speed Vs of the sapphire crystal source rod are constant until the thin ends of the sapphire conical optical fibers are formed, and forming a sapphire optical fiber conical zone between the thick ends and the thin ends of the sapphire optical fibers; and when the sapphire optical fibers are grown to the required length, finishing growing the sapphire conical optical fibers, and cutting and polishing both ends of the sapphire conical optical fibers to obtain the sapphire conical optical fibers.
Description
Technical field
The present invention relates to a kind of preparation method of sapphire conical fiber, belong to the passive fiber devices field.
Background technology
Conical fiber can be widely used in the coupling between optical fiber and optical fiber, light source and optical fiber, optical fiber and the optical element, also can be used for the pattern control of fiber-optic signal transmission system, is a kind of passive fiber device commonly used.Usually the conical fiber material adopts common glass or quartz material, and its preparation method has the direct drawing of molten daraf(reciprocal of farad), etch and drawing wire machine.Molten daraf(reciprocal of farad) and etch all are to reprocess on the basis of simple glass optical fiber, are suitable for making short conical fiber, and the direct drawing of drawing wire machine can directly draw long cone-shaped glass optical fiber.But common silica glass conical fiber is owing to be subjected to restriction such as silica glass material fusing point, be difficult to be used in high-capacity optical fiber laser input and output coupling, therefore development is applicable to that more superpower input and output coupled conical fiber coupling mechanism is very important.
The sapphire optical material has low optical loss in 0.2 μ m～4.0 mu m waveband scopes, and its fusing point is a kind of good high temperature resistant optical material up to 2045 ℃ simultaneously.Not only having had sapphire optical material good optical characteristics but also the characteristics of optical waveguides are arranged based on the sapphire fiber of sapphire optical crystal material preparation, is the high-temperature resistant optical fiber waveguide of present minority practicality.Sapphire fiber can be widely used in application scenarios such as high temperature Fibre Optical Sensor, infrared optics transmission, high power laser input and output coupling.
The sapphire conical fiber is because the wide low-consumption optical of sapphire fiber material sees through wave band, and high working temperature and high temperature optical stability are highly suitable for the input and output coupling of high-capacity optical fiber laser etc., have important application prospects.
Be different from common glass optical fiber preparation method, sapphire fiber is owing to be a kind of optical crystal material in essence, therefore often need prepare sapphire fiber according to the method for crystal growth, sapphire fiber preparation method commonly used at present has guided mode method (also claiming the EFG method) and laser heated pedestal method (also claiming the LHPG method), the guided mode method is used to prepare the sapphire fiber of fixed diameter, prepared sapphire fiber diameter is comparatively even, is fit to same size sapphire fiber preparation in batches; Laser heated pedestal method is versatile and flexible relatively, can prepare various different diameter sapphire fibers.The present invention utilizes laser heated pedestal method to prepare the sapphire conical fiber.
Summary of the invention
The objective of the invention is to overcome the deficiency and the defective of existing glass material conical fiber coupler technologies, a kind of resistant to elevated temperatures, preparation method of being suitable for high-capacity optical fiber laser input and output coupled sapphire conical fiber is provided.
For achieving the above object, the technical solution adopted in the present invention is that the preparation method of this sapphire conical fiber is as follows:
Cross section is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus for circular sapphire crystal source rod; With the sapphire fiber seed crystal be installed to the laser heated pedestal method growing apparatus seed holder in; Two bundle CO
2The top that laser beam focuses on the sapphire crystal source rod makes its fusing formation stablize the melting zone; Melting zone, sapphire crystal source rod top is clicked and entered in the decline of sapphire fiber seed crystal form sapphire fiber growth melting zone; Follow the sapphire fiber seed crystal with first pull rate
V F1 Upwards lift, simultaneously with the sapphire crystal source rod with feed rate
V s Upwards present, until the butt end of stable growth formation sapphire conical fiber, first pull rate of sapphire fiber
V F1 With feed rate
V s Satisfy with the relation shown in the following formula (1):
（1）
In the formula (1),
D F1 ,
D s Be respectively the diameter of sapphire fiber butt end and the diameter of sapphire crystal source rod;
In the feed rate that keeps the sapphire crystal source rod
V s Under the constant condition, with the sapphire fiber seed crystal with second pull rate
V F2 Upwards lift,, form the sapphire fiber tapered zone, second pull rate of sapphire fiber at the butt end of sapphire fiber and between carefully holding thus until the thin end that forms the sapphire conical fiber
V F2 With feed rate
V s Satisfy with the relation shown in the following formula (2):
In the formula (2)
D F2 Be sapphire fiber diameter at smaller end footpath; After the sapphire fiber that grows reaches desired length, finish the growth of sapphire conical fiber, sapphire conical fiber two ends are cut, polished and obtain the sapphire conical fiber.
Further, the butt diameter of sapphire conical fiber of the present invention is 100 μ m～1000 μ m, and the diameter at smaller end footpath of sapphire conical fiber is less than butt diameter.
The beneficial effect that the present invention has is: during preparation sapphire conical fiber, carry out the transition to the thin end of sapphire conical fiber along the tapered zone of sapphire fiber by the butt end of sapphire conical fiber, therefore the sapphire conical fiber that obtains has the low-consumption optical wave band of high fusing point and high-temperature stability and broad, can be widely used in application scenarios such as coupling between the high temperature sapphire fiber, high-capacity optical fiber laser input and output coupling, high temperature Fibre Optical Sensor.Laser heated pedestal method of the present invention prepares the preparation that the sapphire conical fiber can be widely used in single crystal fiber conical fiber coupling mechanism, and thick, the diameter at smaller end footpath ratio of described single crystal fiber coupling mechanism can accurately be controlled on request.
Description of drawings
Fig. 1 is the structural representation of sapphire conical fiber;
Fig. 2 prepares synoptic diagram for the sapphire conical fiber;
Among the figure, 1 is the butt end of sapphire conical fiber, and 2 is the sapphire fiber tapered zone, and 3 is the thin end of sapphire conical fiber, and 4 is the sapphire fiber seed crystal, and 5 is sapphire fiber, and 6 are sapphire fiber growth melting zone, and 7 is the sapphire crystal source rod.
Embodiment
Preparation process of the present invention is as follows:
(1) at first prepares the sapphire crystal source rod.Sapphire crystal source rod 7 can be a sapphire bulk crystals material through cutting the pole of making after round as a ball, also can be sapphire fiber, and diameter and length are determined as requested.
(2) sapphire crystal source rod 7 is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus; With sapphire fiber seed crystal 4 be installed to the laser heated pedestal method growing apparatus seed holder in.
(3) with two bundle CO
2The top that laser beam focuses on the sapphire crystal source rod makes it dissolve to form and stablize the melting zone; The decline of sapphire fiber seed crystal is clicked and entered the vertical melting zone of sapphire crystal source rod and formed sapphire fiber growth melting zone 6.CO
2Laser is the laser apparatus of a kind of output wavelength 10.6 μ m, commercial at present CO
2Laser power can reach more than the 100W, and it is very convenient to be used to heat ceramic crystal material such as sapphire, so laser heated pedestal method is selected CO
2Laser is as heating source.
(4) follow sapphire fiber seed crystal 4 with first pull rate
V F1 Upwards lift, simultaneously with sapphire crystal source rod 7 with speed
V s Upwards present, until the butt end of stable growth formation sapphire conical fiber, first pull rate of sapphire fiber
V F1 With feed rate
V s Satisfy following relation:
In the formula (1),
D F1 ,
D s Be respectively sapphire fiber butt diameter and sapphire crystal source rod diameter.
In laser heated pedestal method crystal optical fibre process of growth, for stable growth, need to keep the growth zone shape stable, therefore the feed rate of first pull rate of sapphire fiber seed crystal and sapphire crystal source rod satisfies above-mentioned relation with the butt diameter and the source rod diameter that grow sapphire fiber, hence one can see that, if keep the source rod feed rate constant, the pull rate of sapphire fiber seed crystal is fast more, and fibre diameter is thin more.
(5) in the feed rate that keeps the sapphire crystal source rod
V s Under the constant condition, with sapphire fiber seed crystal 4 with second pull rate
V F2 Upwards lift,, form sapphire fiber tapered zone 2, second pull rate of sapphire fiber at the butt end of sapphire fiber and between carefully holding until the thin end 3 that forms the sapphire conical fiber
V F2 With feed rate
V s Satisfy following relation:
In the formula (2),
D F2 Be sapphire fiber diameter at smaller end footpath.
(6) after the thin end of the sapphire fiber that grows reaches desired length, finish the growth of sapphire conical fiber, sapphire conical fiber two ends are cut, polished and obtain described sapphire conical fiber.
One of applicating example
Sapphire fiber crystal source rod adopts the pole of sapphire square rod after round as a ball processing that cuts from bulk sapphire single-crystal material, its diameter is Φ 2mm, and length is 60mm.The sapphire crystal source rod is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus, the sapphire fiber seed crystal is installed in the seed holder, the adjustable CO of two beam powers
2The top that laser beam focuses on the sapphire crystal source rod makes it dissolve to form and stablize the melting zone, seed crystal is clicked and entered the melting zone from the top down, regulate first pull rate of sapphire crystal source rod feed rate and sapphire fiber seed crystal then, make that the ratio of feed rate of first pull rate of sapphire fiber seed crystal and sapphire crystal source rod is 4:1, after entering the stable growth state, just can grow diameter is the sapphire fiber butt end of 1000 μ m, after the optical fiber that grows reaches desired length, the feed rate of sapphire crystal source rod remains unchanged, second pull rate that changes the sapphire fiber seed crystal makes that the ratio of feed rate of second pull rate of sapphire fiber seed crystal and sapphire crystal source rod is 9:1, at this moment sapphire fiber enters the conical transition zone growth, the sapphire fiber diameter is 667 μ m after the tapering transition end of extent enters new stable growth district, after the thin end of the sapphire fiber that grows reaches desired length, just can finish the preparation of sapphire conical fiber, by required sapphire conical fiber butt end and thin end length cutting and polishing be carried out at the optical fiber two ends and just obtain required sapphire conical fiber.
Two of applicating example
Sapphire fiber crystal source rod adopts existing sapphire fiber, and its diameter is Φ 800 μ m, and length is 40mm.The sapphire crystal source rod is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus, the sapphire fiber seed crystal is installed in the seed holder, the adjustable CO of two beam powers
2The top that laser beam focuses on the sapphire crystal source rod makes it dissolve to form and stablize the melting zone, seed crystal is clicked and entered the melting zone from the top down, regulate first pull rate of sapphire crystal source rod feed rate and sapphire fiber seed crystal then, make that the ratio of feed rate of first pull rate of sapphire fiber seed crystal and sapphire crystal source rod is 2:1, after entering the stable growth state, just can grow diameter is the sapphire fiber butt end of 567 μ m, after the optical fiber that grows reaches desired length, sapphire crystal source rod feed rate remains unchanged, the pull rate that changes the sapphire fiber seed crystal makes that second pull rate of sapphire fiber seed crystal and sapphire crystal source rod feed rate ratio are 4:1, at this moment sapphire fiber enters the conical transition zone growth, the sapphire fiber diameter is 400 μ m after the tapering transition end of extent enters new stable growth district, after the thin end of the sapphire fiber that grows reaches desired length, just can finish the preparation of sapphire conical fiber, by required sapphire conical fiber butt end and thin end length cutting and polishing be carried out at the optical fiber two ends and just obtain required sapphire conical fiber.
Three of applicating example
Sapphire fiber crystal source rod adopts existing sapphire fiber, and its diameter is Φ 200 μ m, and length is 30mm.The sapphire crystal source rod is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus, the sapphire fiber seed crystal is installed in the seed holder, the adjustable CO of two beam powers
2The top that laser beam focuses on the sapphire crystal source rod makes it dissolve to form and stablize the melting zone, seed crystal is clicked and entered the melting zone from the top down, regulate first pull rate of sapphire crystal source rod feed rate and sapphire fiber seed crystal then, make that the ratio of feed rate of first pull rate of sapphire fiber seed crystal and sapphire crystal source rod is 4:1, after entering the stable growth state, just can grow diameter is the sapphire fiber butt end of 100 μ m, after the optical fiber that grows reaches desired length, the feed rate of sapphire crystal source rod remains unchanged, the pull rate that changes the sapphire fiber seed crystal makes that second pull rate of sapphire fiber seed crystal and sapphire crystal source rod feed rate ratio are 5:1, at this moment sapphire fiber enters the conical transition zone growth, the sapphire fiber diameter is 90 μ m after the tapering transition end of extent enters new stable growth district, after the thin end of the sapphire fiber that grows reaches desired length, just can finish the preparation of sapphire conical fiber, by required sapphire conical fiber butt end and thin end length cutting and polishing be carried out at the optical fiber two ends and just obtain required sapphire conical fiber.
Above-mentioned embodiment is used for the present invention that explains, rather than limits the invention, and in the protection domain of spirit of the present invention and claim, any modification and change to the present invention makes all fall into protection scope of the present invention.
Claims (2)
1. the preparation method of a sapphire conical fiber is characterized in that:
Cross section is installed in the source rod anchor clamps of laser heated pedestal method growing apparatus for circular sapphire crystal source rod (7); With sapphire fiber seed crystal (4) be installed to the laser heated pedestal method growing apparatus seed holder in; Two bundle CO
2The top that laser beam focuses on sapphire crystal source rod (7) makes its fusing formation stablize the melting zone; Sapphire crystal source rod (7) melting zone, top is clicked and entered in sapphire fiber seed crystal (4) decline form sapphire fiber growth melting zone (6); Follow sapphire fiber seed crystal (4) with first pull rate
V F1 Upwards lift, simultaneously with sapphire crystal source rod (7) with feed rate
V s Upwards present, until the butt end (1) of stable growth formation sapphire conical fiber, first pull rate of sapphire fiber
V F1 With feed rate
V s Satisfy with the relation shown in the following formula (1):
In the formula (1),
D F1 ,
D s Be respectively the diameter of sapphire fiber butt end and the diameter of sapphire crystal source rod;
In the feed rate that keeps sapphire crystal source rod (7)
V s Under the constant condition, with sapphire fiber seed crystal (4) with second pull rate
V F2 Upwards lift,, form sapphire fiber tapered zone (2), second pull rate of sapphire fiber at the butt end of sapphire fiber and between carefully holding thus until the thin end (3) that forms the sapphire conical fiber
V F2 With feed rate
V s Satisfy with the relation shown in the following formula (2):
In the formula (2)
D F2 Be sapphire fiber diameter at smaller end footpath; After the sapphire fiber that grows reaches desired length, finish the growth of sapphire conical fiber, sapphire conical fiber two ends are cut, polished and obtain the sapphire conical fiber.
2. the preparation method of sapphire conical fiber according to claim 1 is characterized in that: the butt diameter of described sapphire conical fiber is 100 μ m～1000 μ m, and the diameter at smaller end footpath of sapphire conical fiber is less than butt diameter.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073881A (en) * | 2013-03-29 | 2014-10-01 | 美和学校财团法人美和科技大学 | Method for controlling growth morphology of crystal optical fiber |
| CN107515018A (en) * | 2017-08-09 | 2017-12-26 | 武汉理工大学 | Kagome Hollow-Core Photonic Crystal Fibers sensor and sensor-based system |
| CN107557862A (en) * | 2017-09-12 | 2018-01-09 | 山东大学 | Zirconium oxide single crystal fiber and preparation method and application |
| CN110699750A (en) * | 2019-09-30 | 2020-01-17 | 中国科学院上海硅酸盐研究所 | High-flexibility Al2O3Single crystal optical fiber and preparation method and application thereof |
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| WO1990012762A1 (en) * | 1989-04-20 | 1990-11-01 | University Of South Florida | Methods for bonding optical fibers to wafers |
| EP0515172A1 (en) * | 1991-05-20 | 1992-11-25 | Johnson Matthey Public Limited Company | Blackbody fired on silica fibre |
| US5825958A (en) * | 1996-01-25 | 1998-10-20 | Pharos Optics, Inc. | Fiber optic delivery system for infrared lasers |
| JPH10197909A (en) * | 1997-01-07 | 1998-07-31 | Hitachi Ltd | Optical switching device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104073881A (en) * | 2013-03-29 | 2014-10-01 | 美和学校财团法人美和科技大学 | Method for controlling growth morphology of crystal optical fiber |
| TWI477463B (en) * | 2013-03-29 | 2015-03-21 | Meiho University Of Science And Technology | Method for controlling shape of a crystal fiber growth |
| CN107515018A (en) * | 2017-08-09 | 2017-12-26 | 武汉理工大学 | Kagome Hollow-Core Photonic Crystal Fibers sensor and sensor-based system |
| CN107557862A (en) * | 2017-09-12 | 2018-01-09 | 山东大学 | Zirconium oxide single crystal fiber and preparation method and application |
| CN107557862B (en) * | 2017-09-12 | 2020-06-12 | 山东大学 | Zirconia single crystal optical fiber and preparation method and application thereof |
| CN110699750A (en) * | 2019-09-30 | 2020-01-17 | 中国科学院上海硅酸盐研究所 | High-flexibility Al2O3Single crystal optical fiber and preparation method and application thereof |
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Application publication date: 20111012 |