CN102201461A - Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction - Google Patents

Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction Download PDF

Info

Publication number
CN102201461A
CN102201461A CN2011101111953A CN201110111195A CN102201461A CN 102201461 A CN102201461 A CN 102201461A CN 2011101111953 A CN2011101111953 A CN 2011101111953A CN 201110111195 A CN201110111195 A CN 201110111195A CN 102201461 A CN102201461 A CN 102201461A
Authority
CN
China
Prior art keywords
amorphous silicon
layer
titanium silicide
thin film
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101111953A
Other languages
Chinese (zh)
Inventor
李媛
吴兴坤
郝芳
周丽萍
杨晗琼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AMPLESUN POWER HOLDINGS Co Ltd
Original Assignee
AMPLESUN POWER HOLDINGS Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AMPLESUN POWER HOLDINGS Co Ltd filed Critical AMPLESUN POWER HOLDINGS Co Ltd
Priority to CN2011101111953A priority Critical patent/CN102201461A/en
Publication of CN102201461A publication Critical patent/CN102201461A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a method for preparing a polycrystalline silicon thin film by amorphous silicon low-temperature induction, belonging to the technical field of thin-film solar battery. The method overcomes the disadvantage of slow crystallization rate of the existing metal induction method. According to the invention, a titanium silicide nano-wire layer and an amorphous silicon thin film layer are sequentially deposited on a substrate from bottom to top, wherein the titanium silicide nano-wire layer induces the amorphous silicon thin film layer to form a polycrystalline silicon thin film layer, thereby forming a polycrystalline silicon thin film having a three-layer composite structure consisting of the substrate, a transition layer with coexisting titanium silicide nano-wire and polycrystalline silicon thin film, and the polycrystalline silicon thin film layer. On one hand, the crystallization of the amorphous silicon thin film can be induced at a lower crystallization temperature easily since the titanium silicide nano-wire is used as an inducer; on the other hand, the titanium silicide nano-wire with a huge specific surface area can increase the contact area between the induction layer and the amorphous silicon, thereby increasing the nucleation number in the initial crystallization stage of the amorphous silicon and greatly improving the crystallization rate; and the entire crystallization process is completed in 2 to 4 hours.

Description

Polysilicon membrane and prepare the method for polysilicon membrane with the amorphous silicon low temperature induction
Technical field
The invention belongs to technical field of thin-film solar, specifically is a kind of polysilicon membrane and the method for preparing polysilicon membrane with the amorphous silicon low temperature induction.
Background technology
Photovoltaic generation is as a kind of important novel renewable green energy resource, by countries in the world broad research and utilization; In numerous solar cells, silica-based solar cell has the advantage of abundant raw material, nonhazardous, becomes the main body in solar cell market, especially polycrystal silicon cell now, the relative advantages of simple of efficient height, production technology and production cost.With the trend of the preferential Battery Market research and development of battery efficiency and production cost, polycrystal silicon cell will move towards filming.At present, have the research for preparing the aspect about polysilicon membrane in a large number, be a challenge of difficulty concerning the researcher yet low temperature prepares large grain size polysilicon film always.Tradition polysilicon membrane preparation method comprises two steps: deposition of amorphous silicon films and amorphous silicon membrane crystallization on substrate.Technology about the amorphous silicon membrane crystallization mainly contains solid phase crystallization method, laser crystallization method; Solid phase crystallization method needs amorphous silicon membrane is carried out the integral body heating, temperature requirement is heated to the melting point (1414 ℃) of silicon, and laser crystallization method equipment cost is higher, and technology is complicated simultaneously, also there is damage in the localized hyperthermia of laser beam to substrate except making recrystallized amorphous silicon.In recent years, a kind of metal-induced crystallization method receives much concern, adopt evaporation and the sputtering method metals such as aluminium, silver or gold of deposition one deck hundreds of nanometer thickness on substrates such as glass earlier in the research, on metal level, deposit one deck amorphous silicon membrane again, then with the film annealing crystallization under 500 to 600 ℃ temperature that deposits.
The metal inducement method has greatly reduced the temperature of amorphous silicon membrane crystallization, and still, 500 to 600 ℃ crystallization temperature has limitation for the selection of substrate.Simultaneously, this crystallization inducing metal method, its mechanism is, polysilicon is forming core on metal level earlier, then these independently nucleus to around growth form one deck crystal until being in contact with one another, this layer crystal body is induced the amorphous silicon crystallization of contact with it again, in this course, only nucleus growth becomes one deck polysilicon crystal just to need about 90 minutes time, so crystalline rate is slower.
Summary of the invention
The technical assignment of the technical problem to be solved in the present invention and proposition is to overcome the existing slower defective of metal inducement method crystalline rate, a kind of polysilicon membrane is provided and prepares the method for polysilicon membrane with the amorphous silicon low temperature induction.
For reaching the object of the invention, polysilicon membrane of the present invention comprises substrate and layer polysilicon film, it is characterized in that: the transition zone that has the coexistence of the titanium silicide nano line that is combined with each other with the two and polysilicon membrane between described substrate and the layer polysilicon film.
Optimization technique measure as described polysilicon membrane: described substrate is the transparent conductive oxide film glass of tin oxide or zinc oxide, or is corrosion resistant plate.Described titanium silicide nano line comprises at least a form in nano wire, nano-nail, nanometer rods, nano line cluster, the rocket shape nano wire.Described titanium silicide nano line is TiSi crystalline phase or TiSi 2Crystalline phase.
For reaching the object of the invention, the method for preparing polysilicon membrane with the amorphous silicon low temperature induction of the present invention, be on substrate, to deposit titanium silicide nano wire layer and amorphous silicon membrane layer from bottom to top successively, induce the crystallization of amorphous silicon membrane layer to become layer polysilicon film by described titanium silicide nano line layer.
As the described optimization technique measure for preparing the method for polysilicon membrane with the amorphous silicon low temperature induction: described substrate is the transparent conductive oxide film glass of tin oxide or zinc oxide, or is corrosion resistant plate.Described titanium silicide nano line layer comprises at least a form in nano wire, nano-nail, nanometer rods, nano line cluster, the rocket shape nano wire.Described titanium silicide nano line layer is TiSi crystalline phase or TiSi 2Crystalline phase.Described amorphous silicon membrane layer is the film that chemical vapour deposition (CVD) or magnetron sputtering deposition become.
The invention has the beneficial effects as follows: with the titanium silicide nano line as derivant, on the one hand, titanium silicide and the crystal silicon mismatch degree on lattice constant is little than other metals, so easier amorphous silicon membrane crystallization of inducing, amorphous silicon has lower nucleating potential barrier in crystallization process, crystallization temperature is lower, drops to below 400 ℃; On the other hand, the specific area that the titanium silicide nano line is huge increases the contact area between inducing layer and the amorphous silicon, and the amorphous silicon crystallization starting stage, the forming core number increases, and crystalline rate is greatly improved, and whole crystallization process was at 2 to 4 hours.
Description of drawings
Fig. 1 is the cross section structure schematic diagram of polysilicon membrane of the present invention.
Number in the figure explanation: 1-substrate, 2-transition zone, 3-layer polysilicon film.
Embodiment
The present invention will be further described by embodiment below in conjunction with accompanying drawing.
As shown in Figure 1, polysilicon membrane of the present invention comprises substrate 1 and layer polysilicon film 3, has the transition zone 2 of the titanium silicide nano line that is combined with each other with the two and polysilicon membrane coexistence between substrate 1 and the layer polysilicon film 3.Further, substrate is the transparent conductive oxide film glass of tin oxide or zinc oxide, or is corrosion resistant plate.The titanium silicide nano line comprises at least a form in nano wire, nano-nail, nanometer rods, nano line cluster, the rocket shape nano wire.The titanium silicide nano line is TiSi crystalline phase or TiSi 2Crystalline phase.
Embodiment 1:
1) with tin oxide transparent conductive glass (F-SNO 2) be substrate 1, adopt chemical vapour deposition technique on substrate 1, to deposit one deck titanium silicide thin layer and titanium silicide nano line composite construction, the titanium silicide nano line comprises nano wire, nano-nail, nanometer rods, nano line cluster, is the TiSi crystalline phase;
2) the amorphous silicon membrane layer of the plasma activated chemical vapour deposition of adopting 13.56MHZ deposition one deck 1 μ m on titanium silicide film that step 1) makes and titanium silicide nano line composite construction;
3) with step 2) the amorphous silicon membrane layer that makes is in 400 ℃ of annealing heat treatment 1h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 2:
1) be substrate with ZnO transparent conductive glass (Ag-ZnO), adopt chemical vapour deposition technique on substrate 1, to deposit one deck titanium silicide film and titanium silicide nano line composite construction, the titanium silicide nano line comprises nano wire, nano-nail, rocket shape nano wire, is the TiSi crystalline phase;
2) the amorphous silicon membrane layer of the plasma activated chemical vapour deposition of adopting 13.56MHZ deposition one deck 2 μ m on titanium silicide film that step 1) makes and titanium silicide nano line composite construction;
3) with step 2) the amorphous silicon membrane layer that makes is in 400 ℃ of annealing heat treatment 2h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 3:
1) with tin oxide transparent conductive glass (F-SNO 2) be substrate, adopt solid reaction process on substrate 1, to prepare the titanium silicide nano line, the titanium silicide nano line comprises nano-nail, nanometer rods, nano line cluster, rocket shape nano wire, is TiSi 2Crystalline phase;
2) adopt magnetron sputtering method on the titanium silicide nano line that step 1) makes, to deposit the amorphous silicon membrane layer of 3 μ m;
3) with step 2) amorphous silicon membrane that makes is in 400 ℃ of annealing heat treatment 2h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 4:
1) be substrate with ZnO transparent conductive glass (Ag-ZnO), adopt solid reaction process to prepare the titanium silicide nano line on substrate 1, the titanium silicide nano line comprises nano-nail, nanometer rods, nano line cluster, is TiSi 2Crystalline phase;
2) adopt magnetron sputtering method on the titanium silicide nano line that step 1) makes, to deposit the amorphous silicon membrane layer of 2 μ m;
3) with step 2) amorphous silicon membrane that makes is in 350 ℃ of annealing heat treatment 4h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 5:
1) with the stainless steel is substrate, adopt chemical vapour deposition technique on substrate 1, to deposit one deck titanium silicide film and titanium silicide nano line composite construction, the titanium silicide nano line comprises nano wire, nano-nail, nanometer rods, nano line cluster, rocket shape nano wire, is the TiSi crystalline phase;
2) adopt the amorphous silicon membrane layer of magnetron sputtering method deposition 2 μ m on titanium silicide film that step 1) makes and titanium silicide nano line composite construction;
3) with step 2) amorphous silicon membrane that makes is in 330 ℃ of annealing heat treatment 4h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 6:
1) with the stainless steel be substrate, adopt solid reaction process to prepare the titanium silicide nano line on substrate 1, the titanium silicide nano line is a nano wire, is the TiSi crystalline phase;
2) adopt magnetron sputtering method on the titanium silicide nano line that step 1) makes, to deposit the amorphous silicon membrane layer of 3 μ m;
3) with step 2) amorphous silicon membrane that makes is in 350 ℃ of annealing heat treatment 4h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Embodiment 7:
1) with tin oxide transparent conductive glass (F-SNO 2) be substrate, adopt chemical vapour deposition technique on substrate 1, to deposit one deck titanium silicide film and titanium silicide nano line composite construction, the titanium silicide nano line is a nano-nail, is TiSi 2Crystalline phase;
2) the amorphous silicon membrane layer of the plasma activated chemical vapour deposition of adopting 13.56MHZ deposition 2 μ m on titanium silicide film that step 1) makes and titanium silicide nano line composite construction;
3) with step 2) amorphous silicon membrane that makes is in 350 ℃ of annealing heat treatment 3h down, makes the titanium silicide nano line induce the layer polysilicon film of amorphous silicon membrane layer crystallization becoming megacryst grain, finally obtains large grain size polysilicon film shown in Figure 1.
Through test, the inventive method can be on the thick substrate of 3-4mm deposition or the thick titanium silicide nano line layer of preparation 4-12nm, deposit the thick amorphous silicon membrane layer of 1-3um again on titanium silicide nano line layer, the last heat treatment 1-4h that anneals in 330-400 ℃ temperature range all can reach the object of the invention.

Claims (9)

1. polysilicon membrane comprises substrate (1) and layer polysilicon film (3), it is characterized in that: the transition zone (2) that has the coexistence of the titanium silicide nano line that is combined with each other with the two and polysilicon membrane between described substrate (1) and the layer polysilicon film (3).
2. polysilicon membrane according to claim 1 is characterized in that: described substrate (1) is the transparent conductive oxide film glass of tin oxide or zinc oxide, or is corrosion resistant plate.
3. polysilicon membrane according to claim 1 is characterized in that: described titanium silicide nano line comprises at least a form in nano wire, nano-nail, nanometer rods, nano line cluster, the rocket shape nano wire.
4. polysilicon membrane according to claim 1 is characterized in that: described titanium silicide nano line is TiSi crystalline phase or TiSi 2Crystalline phase.
5. the method for preparing polysilicon membrane with the amorphous silicon low temperature induction, it is characterized in that: on substrate (1), deposit titanium silicide nano wire layer and amorphous silicon membrane layer from bottom to top successively, induce amorphous silicon membrane layer crystallization becoming layer polysilicon film (3) by described titanium silicide nano line layer.
6. according to claim 5ly prepare the method for polysilicon membrane with the amorphous silicon low temperature induction, it is characterized in that: described substrate (1) is the transparent conductive oxide film glass of tin oxide or zinc oxide, or is corrosion resistant plate.
7. according to claim 5ly prepare the method for polysilicon membrane with the amorphous silicon low temperature induction, it is characterized in that: described titanium silicide nano line layer comprises at least a form in nano wire, nano-nail, nanometer rods, nano line cluster, the rocket shape nano wire.
8. according to claim 5ly prepare the method for polysilicon membrane with the amorphous silicon low temperature induction, it is characterized in that: described titanium silicide nano line layer is TiSi crystalline phase or TiSi 2Crystalline phase.
9. according to claim 5ly prepare the method for polysilicon membrane with the amorphous silicon low temperature induction, it is characterized in that: described amorphous silicon membrane layer is the film that chemical vapour deposition (CVD) or magnetron sputtering deposition become.
CN2011101111953A 2011-04-29 2011-04-29 Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction Pending CN102201461A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011101111953A CN102201461A (en) 2011-04-29 2011-04-29 Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011101111953A CN102201461A (en) 2011-04-29 2011-04-29 Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction

Publications (1)

Publication Number Publication Date
CN102201461A true CN102201461A (en) 2011-09-28

Family

ID=44661996

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101111953A Pending CN102201461A (en) 2011-04-29 2011-04-29 Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction

Country Status (1)

Country Link
CN (1) CN102201461A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594195A (en) * 2013-10-28 2014-02-19 中国科学院长春光学精密机械与物理研究所 Method for making flexible, transparent and conductive film made of metal nanowires

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594195A (en) * 2013-10-28 2014-02-19 中国科学院长春光学精密机械与物理研究所 Method for making flexible, transparent and conductive film made of metal nanowires

Similar Documents

Publication Publication Date Title
US8211739B2 (en) Polycrystalline silicon solar cell having high efficiency and method for fabricating the same
CN101665905B (en) Aluminum-induced low temperature preparation method of large grain size polysilicon film
CN102569508A (en) Thin-film solar photovoltaic cell with nano wire array structure and preparation method for thin-film solar photovoltaic cell
CN102243991B (en) Method for inducing amorphous silicon film with tin to be crystallized into polycrystalline silicon film
CN103060768A (en) Low-temperature rapid crystallization method for amorphous silicon film
CN103137765B (en) A kind of aluminum-induced crystallized polycrystalline silicon film solar cell and preparation method
CN102978590A (en) Multi-cycle rapid thermal annealing method of amorphous silicon film
US20090183772A1 (en) Polycrystalline silicon solar cell having high efficiency and method for fabricating the same
CN101949009B (en) Temperature control method of plasma chemical vapor deposition base
CN102150235A (en) A method for producing polycrystalline layers
CN101820006B (en) High-conversion rate silicon-based unijunction multi-laminate PIN thin-film solar cell and manufacturing method thereof
CN202058744U (en) Polysilicon membrane
CN103426976B (en) A kind of method utilizing reusable substrate to prepare polysilicon membrane
CN103180962A (en) Photovoltaic device with oxide layer
CN102142484A (en) Polysilicon/Cu (In, Ga) Se2 laminated cell process
CN102201461A (en) Polycrystalline silicon thin film and method for preparing polycrystalline silicon thin film by amorphous silicon low-temperature induction
CN103199151A (en) Preparation method of polycrystalline silicon thin film based on metal inducement
CN101710568B (en) Method for inducing crystallization of amorphous silicon thin film by use of nickel acetate solution
CN202167501U (en) Copper indium gallium selenium solar battery
CN105633212B (en) It is a kind of to be based on the method and apparatus that a step coevaporation technique prepares gradient band gap light absorbing zone
CN104681639A (en) Polycrystalline silicon film solar battery based on flexible substrate and preparation method of polycrystalline silicon film solar battery
CN101807620B (en) Absorbed layer for thin film photovoltaic and solar cell made therefrom
CN102041552A (en) Method for preparing polysilicon membrane
CN103227239A (en) Method for dry-etching two-step aluminium-induced crystallization of amorphous silicon membrane
CN101295749B (en) Powder metallurgy metallic silicon solar battery underlay producing technique

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C12 Rejection of a patent application after its publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20110928