CN102201215A - TFT-LCD (thin film transistor liquid crystal display) array substrate and driving method thereof - Google Patents
TFT-LCD (thin film transistor liquid crystal display) array substrate and driving method thereof Download PDFInfo
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Abstract
The invention relates to a TFT-LCD (thin film transistor liquid crystal display) array substrate and a driving method thereof. The array substrate comprises a substrate, wherein pixel regions which are arranged in a matrix mode are formed on the substrate; a first pixel electrode, a first thin-film transistor, a second pixel electrode and a second thin-film transistor are formed in each pixel area; the first pixel electrode and the first thin-film transistor are positioned in an odd row; the second pixel electrode and the second thin-film transistor are positioned in an even row; a first gate line and a second gate line are formed in each pixel region; the first gate line is connected with the grid electrode of the first thin-film transistor; the second gate line is connected with the grid electrode of the second thin-film transistor; and a data line is formed in each pixel region and is respectively connected with the source electrode of the first thin-film transistor and the source electrode of the second thin-film transistor. In the invention, the quantity of the data lines and the quantity of data driving chips or the quantity of pipe pins of the data driving chips are reduced, or the quantity of the gate lines and the quantity of scanning driving chips or the quantity of the pipe pins of the scanning driving chips are reduced and the production cost of a TFT-LCD is reduced.
Description
Technical field
The present invention relates to liquid crystal indicator and driving method thereof, particularly a kind of TFT-LCD array base palte and driving method thereof.
Background technology
Thin Film Transistor-LCD (Thin Film Transistor Liquid Crystal Display is called for short TFT-LCD) mainly comprises: display panels, scan drive circuit and data drive circuit; Wherein, display panels comprises color membrane substrates and the array base palte that box is provided with, and is arranged at two liquid crystal layers between the substrate; Scan drive circuit and data drive circuit are connected with TFT on-off element on the array base palte respectively.
In traditional TFT-LCD array base palte, a TFT on-off element is controlled by a data line (Data Line) and a grid line (Gate Line), by opening or close the TFT on-off element, drives the pixel electrode that is connected with this TFT on-off element.When array base palte was worked, data line was sent to the source electrode of TFT on-off element with the video data signal in the data drive circuit, controls the voltage of pixel electrode with this; Sweep trace is sent to the grid of TFT on-off element with the scanning drive signal in the scan drive circuit, controls the opening and closing of TFT on-off element with this.
The inventor finds in realizing process of the present invention, in traditional TFT-LCD array base palte, meeting is along with the increase of size increase and/or display resolution (resolution), and the quantity or the length of corresponding increase data line (data line) and grid line (gate line).Increase the quantity of data line, the long meeting of data line length thereby cause as demonstration problems such as signal delays; If increase the live width of data line in order to reduce signal delay, will cause the aperture opening ratio of pixel region to reduce, the defective of the display performance that also easily exerts an influence at the place, limit of data line.
Summary of the invention
The present invention's first purpose provides a kind of TFT-LCD array base palte and driving method thereof, is used for reducing the usage quantity of traditional TFT-LCD array base palte data line, thereby reduces the production cost of TFT-LCD.
The present invention's second purpose provides another kind of TFT-LCD array base palte and driving method thereof, is used for reducing the usage quantity of traditional TFT-LCD array base palte grid line, thereby reduces the production cost of TFT-LCD.
For realizing the present invention's first purpose, the invention provides a kind of TFT-LCD array base palte, comprise substrate, be formed with the pixel region that matrix-style is arranged on the described substrate, be formed with first pixel electrode and the first film transistor that is positioned at odd column, second pixel electrode that is positioned at even column and second thin film transistor (TFT) in each pixel region, described the first film transistor drain is connected with first pixel electrode, and the drain electrode of described second thin film transistor (TFT) is connected with second pixel electrode;
Be formed with first grid line and second grid line in each pixel region, described first grid line is connected with the transistorized grid of the first film, and described second grid line is connected with the grid of second thin film transistor (TFT); Be formed with a data line in each pixel region, described data line is connected with the source electrode of the transistorized source electrode of described the first film and second thin film transistor (TFT) respectively.
On the basis of technique scheme, also can be provided with on the described substrate receive the scan drive circuit signal after, produce the line scan signals of a pixel column and successively to the selector switch device of described first grid line and the output of second grid line.
For realizing the present invention's first purpose, the present invention also provides a kind of driving method of above-mentioned TFT-LCD array base palte, comprising:
The line scan signals of step 11, generation one pixel column;
In the TFT-LCD array base palte of the present invention, the shared data line of pixel electrode reduces data line quantity and data driving chip quantity or data driving chip number of pin in twos, helps reducing the production cost of TFT-LCD.Because of reducing the space that data line is saved, under the situation that does not influence aperture opening ratio, can be used for increasing the width of data line, so that reduce signal delay; On the other hand, the space of saving because of the minimizing data line also can be used to improve aperture opening ratio.Further, the present invention also can produce line scan signals by the selector switch device, and control second pixel electrode that the colleague is positioned at first pixel electrode of odd column in the pixel and is positioned at even column successively according to a line scan signals timesharing, make the required scanning drive chip quantity of using be half of grid line total quantity, thereby the present invention is in the data driving chip quantity or data driving chip number of pin that reduce the required use of array base palte, thereby do not increase the scanning drive chip quantity of the required use of array base palte or the production cost that the scanning drive chip number of pin helps further reducing TFT-LCD.
The present invention can also provide a kind of TFT-LCD array base palte and driving method thereof, be used for when not increasing data driving chip quantity or data driving chip number of pin, reduce grid line quantity and scanning drive chip quantity or scanning drive chip number of pin.
For realizing the present invention's second purpose, the invention provides another kind of TFT-LCD array base palte, comprise substrate, be formed with the pixel region that matrix-style is arranged on the described substrate, be formed with first pixel electrode and the first film transistor that is positioned at odd column, second pixel electrode that is positioned at even column and second thin film transistor (TFT) in each pixel region, described the first film transistor drain is connected with first pixel electrode, and the drain electrode of described second thin film transistor (TFT) is connected with second pixel electrode;
Be formed with first data line and second data line in each pixel region, described first data line is connected with the transistorized source electrode of the first film, and described second data line is connected with the source electrode of second thin film transistor (TFT); Be formed with a grid line in each pixel region, described grid line is connected with the grid of the transistorized grid of described the first film and second thin film transistor (TFT) respectively.
On the basis of technique scheme, also can be provided with on the described substrate receive the data drive circuit signal after, produce the column data signal of pixel column and successively to the selector switch device of described first data line and the output of second data line.
For realizing the present invention's second purpose, the present invention also provides the driving method of another kind of TFT-LCD array base palte, comprising:
The column data signal of step 21, generation pixel column;
In the TFT-LCD array base palte of the present invention, the shared grid line of pixel electrode reduces grid line quantity and scanning drive chip quantity or scanning drive chip number of pin in twos, helps reducing the production cost of TFT-LCD.Because of reducing the space that grid line is saved, under the situation that does not influence aperture opening ratio, can be used for increasing the width of grid line, so that reduce signal delay; On the other hand, the space of saving because of the minimizing grid line also can be used to improve aperture opening ratio.Further, the present invention also can produce the column data signal by the selector switch device, and control second pixel electrode that the colleague is positioned at first pixel electrode of odd column in the pixel and is positioned at even column successively according to a column data signal timesharing, make the required data driving chip quantity of using be half of data line total quantity, thereby the present invention is in the scanning drive chip quantity or scanning drive chip number of pin that reduce the required use of array base palte, thereby do not increase the data driving chip quantity of the required use of array base palte or the production cost that the data driving chip number of pin helps further reducing TFT-LCD.
Description of drawings
Fig. 1 is the TFT-LCD array base palte first example structure synoptic diagram of the present invention;
Fig. 2 is the TFT-LCD array base palte second example structure synoptic diagram of the present invention;
Fig. 3 is a selector switch device example structure synoptic diagram of the present invention;
Fig. 4 is a kind of TFT-LCD array base palte of the present invention driving method process flow diagram;
Fig. 5 is the another kind of TFT-LCD array base palte of the present invention driving method process flow diagram.
Description of reference numerals:
The 1-pixel region; 11-first pixel electrode; 12-second pixel electrode;
13-the first film transistor; 14-second thin film transistor (TFT);
21-first grid line; 22-second grid line;
The 3-data line;
The 4-scan drive circuit; 41-first scan drive circuit; 42-second scan drive circuit;
The 5-data drive circuit;
6-selector switch device; The 61-first selector switch device; The 62-second selector switch device;
63-selector switch unit; The 64-first grid line start signal line; The 65-second grid line start signal line;
66-the 3rd thin film transistor (TFT); 67-the 4th thin film transistor (TFT); 68-the 5th thin film transistor (TFT);
69-the 6th thin film transistor (TFT); The 631-input end; 632-first output terminal; 633-second output terminal;
The 71-source electrode; The 72-drain electrode; The 73-grid;
The 8-sweep trace.
Embodiment
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Fig. 1 is the TFT-LCD array base palte first example structure synoptic diagram of the present invention.As shown in Figure 1, TFT-LCD array base palte of the present invention comprises substrate, the outer peripheral areas beyond viewing area that on substrate, forms and the viewing area, and the viewing area is made up of the pixel region of arranging with matrix-style.Be formed with two pixel electrodes and two thin film transistor (TFT)s in each pixel region; Outer peripheral areas along grid line direction of extension (promptly along the directions X shown in Fig. 1) is provided with selector switch device 6, and grid line is connected with scan drive circuit 4 by selector switch device 6; Outer peripheral areas along data line 3 direction of extension (promptly along the Y direction shown in Fig. 1) is connected with data drive circuit 5, and data line 3 is connected with data drive circuit 5 respectively.
Two pixel electrodes that form in each pixel region 1 are first pixel electrode 11 that is positioned at odd column and second pixel electrode 12 that is positioned at even column.
Two thin film transistor (TFT)s that form in each pixel region 1 are the first film transistor 13 that is positioned at odd column and second thin film transistor (TFT) 14 that is positioned at even column; Each thin film transistor (TFT) comprises source electrode 71, drain electrode 72 and grid 73; The drain electrode 72 of the first film transistor 13 is connected with first pixel electrode 11.
Every capable pixel region 1 is connected with two grid lines and a data line.These two grid lines are first grid line 21 and second grid line 22; First grid line 21 is connected with the grid 73 of the first film transistor 13, and second grid line 22 is connected with the grid 73 of second thin film transistor (TFT) 14; Data line 3 is connected with the source electrode 71 of the first film transistor 13 and the source electrode 71 of second thin film transistor (TFT) 14 respectively.
The selector switch device 6 that forms on outer peripheral areas is used to receive the signal of scan drive circuit 4 outputs, produces the line scan signals of a pixel column then, and this line scan signals is exported to first grid line 21 and second grid line 22 successively.
In the unit pixel regions 1 of TFT-LCD array base palte, first pixel electrode 11 carries out drive controlling by the first film transistor 13, and second pixel electrode 12 carries out drive controlling by second thin film transistor (TFT) 14; Also shared same the data line 3 of the first film transistor 13 and second thin film transistor (TFT) 14.
Below be example with TFT-LCD array base palte one-row pixels sector scanning, the principle of work of present embodiment is described.
For example: selector switch device 6 receives the signal of scan drive circuit 4 outputs by sweep trace 8, and produces the line scan signals of a pixel column.When selector switch device 6 carries out 1 driving of one-row pixels zone, first pixel electrode 11 that is positioned at odd column in this row pixel region 1 is controlled respectively with second pixel electrode 12 that is positioned at even column.
The control procedure that the scanning of 6 pairs first pixel electrodes 11 of selector switch device is carried out is: selector switch device 6 is set up communicating to connect of first grid line 21 and sweep trace 8, when line scan signals is transferred to first grid line 21 by selector switch device 6, the first film transistor 13 that is connected with first grid line 21 is opened, at this moment, first data-signal of transmission on the data line 3 is via making 11 chargings of first pixel electrode with the first film transistor 13; Because second grid line 22 does not have line scan signals, second thin film transistor (TFT) 14 that is connected with second grid line 22 cuts out, thereby second pixel electrode 12 can not charge.
After first pixel electrode, 11 chargings that are positioned at odd column in this row pixel region 1 finish, second pixel electrode 12 that is positioned at even column in 6 pairs of these row pixel regions 1 of selector switch device scans, be specially: selector switch device 6 disconnects communicating to connect of first grid line 21 and sweep trace 8, and set up communicating to connect of second grid line 22 and sweep trace 8, line scan signals is transferred to second grid line 22, second thin film transistor (TFT) 14 that is connected with second grid line 22 is opened, at this moment, second data-signal of transmission on the data line 3 makes 12 chargings of second pixel electrode via second thin film transistor (TFT) 14; Because first grid line 21 does not have sweep signal, close with the first film transistor 13 that first grid line 21 is connected, thereby first pixel electrode 11 can not charge.When second pixel electrode 12 in this row pixel region 1 is finished charging process, promptly finished the scanning in one-row pixels zone.
Afterwards, scan drive circuit 4 can the new signal of output, and selector switch device 6 produces the line scan signals of another pixel column according to this signal, scans next line pixel region 1 by this line scan signals.Scan mode can be lined by line scan or staggered scanning, and can adopt said method that the scanning of every capable pixel region is controlled.
Present embodiment TFT-LCD array base palte is the shared data line of pixel electrode in twos, reduces data line quantity and data driving chip quantity or data driving chip number of pin, helps reducing the production cost of TFT-LCD.Because of reducing the space that data line is saved, under the situation that does not influence aperture opening ratio, can be used for increasing the width of data line, so that reduce signal delay; On the other hand, the space of saving because of the minimizing data line also can be used to improve aperture opening ratio.Simultaneously, present embodiment is in the junction of scan drive circuit and pixel region, increased by one and has been used to produce line scan signals and successively to the selector switch device of first grid line and the output of second grid line.So design can make the required grid line total quantity of using of present embodiment (summation of the first grid line quantity and the second grid line quantity) be two times of outer peripheral areas sweep trace quantity, row selecting switch unit in the selector switch device, two grid lines of sweep trace control viewing area that can be by outer peripheral areas, thus can drive first pixel electrode that is positioned at odd column in the pixel region respectively or be positioned at second pixel electrode of even column.Thereby present embodiment thereby the present invention do not increase the scanning drive chip quantity or the scanning drive chip number of pin of the required use of array base palte in the data driving chip quantity or data driving chip number of pin that reduce the required use of array base palte.
In addition, because the selector switch device can adopt existing TFT composition technology, in the array base palte preparation process, is formed directly into the outer peripheral areas of array base palte, thereby can not increase the extra cost for preparing the selector switch device, thereby help reducing the production cost of TFT-LCD.Further, scan drive circuit can select for use the outer peripheral areas of one or more scanning drive chips and array base palte to amplexiform formation, can adopt existing TFT composition technology on the outer peripheral areas of array base palte, directly to form scan drive circuit in addition, thereby help further reducing the production cost of TFT-LCD.
It will be appreciated by those skilled in the art that, in the technique scheme, if each pixel region setting is two data lines, the situation of two shared grid lines of pixel electrode, the selector switch device also can be formed at along the outer peripheral areas of data line direction of extension (promptly along the Y direction shown in Fig. 1), be used to receive the signal of data drive circuit output, produce the column data signal of pixel column then, and export this data-signal to first data line that is positioned at odd column and second data line that is positioned at even column successively, the pixel region timesharing that the feasible pixel region that is connected with first data line is connected with second data line is alternately obtained data-signal and is charged.
Another kind of TFT-LCD array base palte provided by the invention comprises: substrate, be formed with the pixel region that matrix-style is arranged on the described substrate, be formed with first pixel electrode and the first film transistor that is positioned at odd column, second pixel electrode that is positioned at even column and second thin film transistor (TFT) in each pixel region, described the first film transistor drain is connected with first pixel electrode, and the drain electrode of described second thin film transistor (TFT) is connected with second pixel electrode.Be formed with first data line and second data line in each pixel region, described first data line is connected with the transistorized source electrode of the first film, and described second data line is connected with the source electrode of second thin film transistor (TFT); Be formed with a grid line in each pixel region, described grid line is connected with the grid of the transistorized grid of described the first film and second thin film transistor (TFT) respectively; Also be provided with the column data signal that produces pixel column on the described substrate and successively to the selector switch device of described first data line and the output of second data line.
Present embodiment is owing to be provided with the selector switch device, the scanning drive chip quantity of the required use of array base palte or scanning drive chip number of pin, can be reduced to the scanning drive chip quantity of required use on the array base palte that is not provided with the selector switch device or half of scanning drive chip number of pin, and can not increase the number of pin of data driving chip quantity or data driving chip, thereby help reducing the production cost of TFT-LCD.
Fig. 2 is the TFT-LCD array base palte second example structure synoptic diagram of the present invention.Present embodiment and difference embodiment illustrated in fig. 1 are that present embodiment is respectively arranged with a selector switch device and a scan drive circuit in the outer peripheral areas of the and arranged on left and right sides of viewing area; Each scan drive circuit is connected with the grid line of viewing area by a selector switch device.As shown in Figure 2, outer peripheral areas is provided with first scan drive circuit 41 in the left side, viewing area, first scan drive circuit 41 is connected with the first selector switch device 61, the first selector switch device 61 is connected with the end of first grid line 21 with second grid line 22, be used for from an end of first grid line 21 and second grid line 22, produce the line scan signals of a pixel column according to the signal that receives from first scan drive circuit 41, and this line scan signals is transferred to first grid line 21 and second grid line 22 successively.Be provided with second scan drive circuit 42 in right side, viewing area outer peripheral areas, second scan drive circuit 42 is connected with the second selector switch device 62, the second selector switch device 62 is connected with the other end of first grid line 21 and second grid line 22, be used for from the other end of first grid line 21 and second grid line 22, produce the line scan signals of pixel column according to the signal of second scan drive circuit 42 output, and this line scan signals is transferred to first grid line 21 and second grid line 22 successively.
Present embodiment adopts two scan drive circuits to pass through the selector switch device that links to each other separately respectively, driven in synchronism colleague pixel, and first pixel electrode that is positioned at odd column in feasible colleague's pixel charges successively with the second even pixel electrode that is positioned at even column.Concrete, be positioned at first scan drive circuit 41 and the first selector switch device 61 in left side, viewing area, with second scan drive circuit 42 that is positioned at the right side, viewing area and the second selector switch device 62, adopt the method for synchronization, open second thin film transistor (TFT) 14 that is positioned at the first film transistor 13 of odd column in colleague's pixel region 1 and is positioned at even column successively.
Below be example with TFT-LCD array base palte one-row pixels sector scanning, the principle of work of present embodiment is described.
First scan drive circuit 41 is after the first selector switch device, 61 output signals, produce the line scan signals of a pixel column, the first selector switch device 61 is set up communicating to connect of first grid line 21 and sweep trace 8, line scan signals is transferred to first grid line 21, the first film transistor 13 that is connected with first grid line 21 is opened from left to right successively, first data-signal of transmission on the data line 3 is via making the charging successively from left to right of first pixel electrode 11 with the first film transistor 13; Because second grid line 22 does not have sweep signal, second thin film transistor (TFT) 14 that is connected with second grid line 22 cuts out, thereby second pixel electrode 12 can not charge.Meanwhile, second scan drive circuit 42 is to the second selector switch device, 62 output signals, produce the sweep signal of a pixel column, the second selector switch device 62 is set up communicating to connect of first grid line 21 and sweep trace 8, line scan signals is transferred to first grid line 21, the first film transistor 13 right-to-lefts that are connected with first grid line 21 are opened successively, and first data-signal of transmission on the data line 3 is via with the first film transistor 13 first pixel electrode, 11 right-to-lefts being charged successively; Because second grid line 22 does not have sweep signal, second thin film transistor (TFT) 14 that is connected with second grid line 22 cuts out, thereby second pixel electrode 12 can not charge.
After first pixel electrode, 11 chargings that are positioned at odd column in this row pixel region are finished, the first selector switch device 61 and the second selector switch device 62 disconnect communicating to connect of first grid line 21 and sweep trace 8 synchronously, set up communicating to connect of second grid line 22 and sweep trace 8, line scan signals is transferred to second grid line 22, second thin film transistor (TFT) 14 that is connected with second grid line 22 from left to right or right-to-left open successively, at this moment, on the data line 3 transmission second data-signal, via second thin film transistor (TFT) 14 make second pixel electrode 12 from left to right or right-to-left charge successively.When second pixel electrode 12 is finished charging process in this row pixel region 1, promptly finished the scanning in one-row pixels zone.
Afterwards, first scan drive circuit 41 and second scan drive circuit 42 be the new signal of output synchronously, respectively by the first selector switch device 61 and the second selector switch device 62, adopts said method bi-directional synchronization scanning next line pixel.
Present embodiment drives array base palte by the mode of bi-directional synchronization scanning, can reduce the grid line of sweep signal in the grid line transmission course and postpone (Gate Line Delay), therefore, postpone in the allowed band reaching identical grid line with the unidirectional drive method, can in preparation TFT-LCD array base palte process, reduce the live width of grid line, thereby improve pixel aperture ratio; Simultaneously, the type of drive of present embodiment bi-directional synchronization scanning also can add fast scan speed, improves sweep frequency.Further, present embodiment also helps the convenience that improves the defects detection that grid line opens circuit.For ease of comparing explanation with prior art, suppose two grid lines in a pixel region, promptly cut-off point defective (as: the 3rd thin film transistor (TFT), promptly the second odd column thin film transistor (TFT) breaks down) from left to right appears in a certain grid line in first grid line and second grid line.If adopting the prior art of unidirectional drive to carry out array base palte drives, because the 3rd thin film transistor (TFT) breaks down, the 3rd pixel region can not show, in addition, all thin film transistor (TFT)s after the 3rd thin film transistor (TFT) that this grid line connects turned right be because of can't receiving line scan signals, and cause the 3rd pixel region all pixel regions afterwards of turning right all can not show; Trouble spot on this grid line is very obvious to the whole influence that shows of TFT-LCD.What be different from prior art is, the mode that present embodiment adopts bi-directional synchronization to drive, if the 3rd thin film transistor (TFT) breaks down, begin all thin film transistor (TFT)s from the next thin film transistor (TFT) in the right side that this grid line connects so and all can obtain line scan signals, thereby make corresponding pixel region normally to show by the other direction driving.As seen, in the bi-directional synchronization type of drive that present embodiment adopts, if this cut-off point is difficult to repair, can refuse restorative procedure to cut-off point, direct thin film transistor (TFT) from left side and this cut-off point left side of right side driven in synchronism and right side, thereby make the pixel electrode that is positioned at this cut-off point left side and right side charge respectively, thereby the mode that present embodiment adopts bi-directional synchronization to drive help reducing to resolve the influence of point defect to showing.
Fig. 3 is a selector switch device example structure synoptic diagram of the present invention.Present embodiment selector switch device can be in preparation TFT-LCD array base palte, is formed directly into by composition technology on the outer peripheral areas of underlay substrate of TFT-LCD array base palte.As shown in Figure 3, selector switch device 6 has the matrix form circuit structure, comprises selector switch unit 63 that a plurality of row are arranged and the first grid line start signal line 64 and the second grid line start signal line 65 that receives external timing signal; The quantity of selector switch unit 63 is identical with the line number of pixel region 1; Each selector switch unit 63 comprises an input end 631, two output terminals (i.e. first output terminal 632 and second output terminal 633) and is connected switch between input end 631 and the output terminal.Input end 631 is connected with delegation's signal output part of scan drive circuit, and promptly input end 631 is connected with sweep trace, is used to receive the signal of scan drive circuit output and produce line scan signals; First output terminal 632 is connected with first grid line, and second output terminal 633 is connected with second grid line.Be formed with switch between input end 631 and first output terminal 632 and second output terminal 633, this switch is used for connecting first grid line and second grid line successively according to clock signal, makes line scan signals successively to first grid line and the output of second grid line.Concrete, being formed with first switch between the input end 631 and first output terminal 632, this first switch is specially the 3rd thin film transistor (TFT) 66; Be formed with second switch between the input end 631 and second output terminal 633, this second switch is specially the 4th thin film transistor (TFT) 67.
The grid of the 3rd thin film transistor (TFT) 66 is connected with the first grid line start signal line 64, and the input end 631 and first output terminal 632 are by the source electrode and the drain electrode bridge joint of the 3rd thin film transistor (TFT) 66; The grid of the 4th thin film transistor (TFT) 67 is connected with the second grid line start signal line 65, and the input end 631 and second output terminal 633 are by the source electrode and the drain electrode bridge joint of the 4th thin film transistor (TFT) 67.Specific implementation is for example: the tie point of the 3rd thin film transistor (TFT) 66 source electrodes and the 4th thin film transistor (TFT) 67 source electrodes can be used as the input end 631 of this selector switch unit 63, is connected with scan drive circuit sweep signal output terminal by sweep trace; The drain electrode of the 3rd thin film transistor (TFT) 66 can be used as first output terminal 632 of selector switch unit, is connected with first grid line; The drain electrode of the 4th thin film transistor (TFT) 67 is connected with second grid line as second output terminal 633 of selector switch unit.
Be input to the selector switch unit 63 that is connected with this sweep trace from the signal of scan drive circuit output by sweep trace, external timing signal is alternately to the first grid line start signal line 64 and the second grid line start signal line, 65 input high level signals.For example:
When external timing signal be in first along the time, clock signal is opened the first grid line start signal line 64, make the first grid line start signal line 64 have high level signal, at this moment, the grid of the 3rd thin film transistor (TFT) 66 that is connected with the first grid line start signal line 64 has the grid start signal, make the 3rd thin film transistor (TFT) 66 be in opening, line scan signals is by the 3rd thin film transistor (TFT) 66, be transferred to first grid line through first output terminal 632, the first film transistor that is connected with first grid line is opened, and is positioned at first pixel electrode charging of odd column in feasible colleague's pixel; Because this moment, the second grid line start signal line 65 was a low level signal, the 4th thin film transistor (TFT) 67 that is connected with the second grid line start signal line 65 is in closed condition, therefore, does not have line scan signals on second grid line.
When external timing signal counter-rotating promptly be in second along the time, clock signal is opened the second grid line start signal line 65, make the second grid line start signal line 65 have high level signal, at this moment, the grid of the 4th thin film transistor (TFT) 67 that is connected with the second grid line start signal line 65 has the grid start signal, make the 4th thin film transistor (TFT) 67 be in opening, line scan signals is transferred to second grid line by the 4th thin film transistor (TFT) 67 through second output terminal 633, second thin film transistor (TFT) that is connected with second grid line is opened, and is positioned at second pixel electrode charging of even column in feasible colleague's pixel region; Because this moment, the first grid line start signal line 64 was a low level signal, the 3rd thin film transistor (TFT) 66 that is connected with the first grid line start signal line 64 is in closed condition, therefore, does not have line scan signals on second grid line.
Present embodiment has been realized successively line scan signals being transferred to first grid line and second grid line by the timesharing of selector switch unit, realized when colleague's picture element scan, first pixel electrode that is positioned at odd column in this colleague's pixel being carried out timesharing with second pixel electrode that is positioned at even column driving successively.Because the sweep trace that present embodiment is connected with scan drive circuit is the employed grid line quantity in viewing area half, therefore, though the array base-plate structure of the shared data line of two row pixel electrodes has increased the usage quantity of grid line in the viewing area, but the quantity of the sweep trace of actual reception scan drive circuit output signal does not increase, thereby do not need to increase the usage quantity of scanning drive chip in the scan drive circuit, perhaps do not need to increase the number of pin of existing scanning drive chip, thereby help reducing the production cost of TFT-LCD.
On the basis of technique scheme, present embodiment also can form the 5th thin film transistor (TFT) 68 and the 6th thin film transistor (TFT) 69 of signal cross transmission between two selector switch unit 63.First output terminal 632 and second output terminal 633 of the source electrode of the 5th thin film transistor (TFT) 68 and this selector switch of drain electrode bridge joint unit 63, and the grid of the 5th thin film transistor (TFT) 68 is connected with first output terminal 632 of next line selector switch unit 63; First output terminal 632 of the source electrode of the 6th thin film transistor (TFT) 69 and this selector switch of drain electrode bridge joint unit 63 and second output terminal 633 of next line selector switch unit, and the grid of the 6th thin film transistor (TFT) 69 is connected with second output terminal 633 of this selector switch unit 63.
For ease of explanation, below with in the TFT-LCD array base palte, the sweep trace that is used to drive n capable (n for greater than 1 integer) pixel region is called n bar sweep trace; Capable first grid line of n is called n bar first grid line, and n is capable, and second grid line is called n bar second grid line; To be used for timesharing and control the 3rd thin film transistor (TFT), the 4th thin film transistor (TFT), the 5th thin film transistor (TFT) and the 6th thin film transistor (TFT) that the switch selected cell of n bar first grid line and n bar second grid line comprises, be expressed as TFT3 (n), TFT4 (n), TFT5 (n) and TFT6 (n) respectively.In the circuit structure shown in Figure 3, row n can change, but the same for the naming rule of this row respective element.
Be provided with the principle of work of the selector switch device of the 5th thin film transistor (TFT) 68 and the 6th thin film transistor (TFT) 69 below in conjunction with Fig. 3 explanation.
The line scan signals that the selector switch device generates according to the signal of scan drive circuit output comprises that scanning cut-in voltage signal Vgh and scanning closes voltage signal Vg1, and wherein, Vgh is a high-voltage signal, and Vg1 is a low-voltage signal.Suppose that scan drive circuit adopts progressive scanning mode output scanning signal, promptly when a horizontal scanning line had scanning cut-in voltage signal Vgh, other horizontal scanning lines had scanning and close voltage signal Vg1.
When the line scan signals that produces from the selector switch device is when being used to scan the sweep signal of the capable pixel electrode of n-1, has scanning cut-in voltage signal Vgh on the n-1 bar sweep trace, and other horizontal scanning lines are closed voltage signal Vg1 as having scanning on n bar sweep trace, the n+1 bar sweep trace.Be used to scan the sweep signal input selector switch device shown in Figure 3 of the capable pixel electrode of n-1.
When the first grid line start signal line 64 in selecting switching device loads high level by external timing signal, load low level on the second grid line start signal line 65, the TFT on-off element of each the selector switch unit that is connected with the first grid line start signal line 64 (as: TFT3 (n-1), TFT3 (n), TFT3 (n+1) etc.) all is in opening because of grid has high-voltage signal.When n-1 bar sweep trace will scan cut-in voltage signal Vgh, be transferred to capable first grid line of n-1 by TFT3 (n-1), afterwards, the capable the first film transistor of n-1 is opened, thereby controls first pixel electrode charging that is positioned at odd column in the capable pixel electricity of the n-1 zone.At this moment, n bar sweep trace, n+1 bar sweep trace etc. have scanning and close voltage signal Vg1, scanning is closed voltage signal Vg1 through TFT3 (n), TFT3 TFT on-off elements such as (n+1) that the first grid line start signal line 64 connects, voltage signal Vg1 is closed in scanning be transferred to n bar first grid line and n+1 bar first grid line etc.
When the second grid line start signal line 65 in selecting switching device loads high level by external timing signal, load low level on the first grid line start signal line 64, the TFT on-off element of each the selector switch unit that is connected with the second grid line start signal line 65 (as: TFT4 (n-1), TFT4 (n), TFT4 (n+1) etc.) all is in opening.When n-1 bar sweep trace will scan cut-in voltage signal Vgh, be transferred to capable second grid line of n-1 by TFT4 (n-1), afterwards, capable second thin film transistor (TFT) of n-1 is opened, thereby controls second pixel electrode charging that is positioned at even column in the capable pixel region of n-1.At this moment, n bar sweep trace, n+1 bar sweep trace etc. have scanning and close voltage signal Vg1, scanning is closed voltage signal Vg1 through TFT4 (n), TFT4 TFT on-off elements such as (n+1) that the second grid line start signal line 65 connects, voltage signal Vg1 is closed in scanning be transferred to n bar second grid line and n+1 bar second grid line;
Simultaneously, the scanning of n bar sweep trace is closed voltage signal Vg1 and is transferred to n-1 bar first grid line through TFT6 (n-1), make the voltage signal speed on n-1 bar first grid line become the Vg1 signal, thus make with n-1 bar first grid line on the pixel electrode that is connected be in hold mode preferably.Concrete, when the second grid line start signal line 65 in selecting switching device loads high level by external timing signal, the Vgh signal of n-1 bar sweep trace input is transferred to n-1 bar second grid line via TFT4 (n-1), the gate terminal of TFT6 (n-1) has just had high-voltage signal like this, the Vg1 signal of n bar sweep trace input can at first be transferred to n bar second grid line via TFT4 (n), the TFT6 (n-1) that Vg1 signal on n bar second grid line can be through opening and be transferred to n-1 bar first grid line afterwards, make the voltage signal on n-1 bar first grid line can become the Vg1 signal fast, thus make with n-1 bar first grid line on first pixel electrode that is connected be in hold mode preferably.In brief, be exactly on n-1 bar second grid line, to export in the high level, be that the grid of the second pixel electrode correspondence of the capable even column of corresponding n-1 is when opening, rapid output low level on n-1 bar first grid line, promptly the grid of the first pixel electrode correspondence of the capable odd column of corresponding n-1 is closed rapidly.
Finish the driving of the capable pixel electrode of n-1 by said process after, scan drive circuit output is used to drive the signal of the capable pixel electrode of n, the n every trade sweep signal that the selector switch device produces.Scanning cut-in voltage signal Vgh is through n bar sweep trace input selector switch device, the selector switch device is turn-offed the second grid line start signal by the signal of clock control, the first grid line start signal is opened, load high level to the first grid line start signal line 64, like this, Vgh signal on the n bar sweep trace just can be transferred to n bar first grid line through TFT3 (n), and the first film transistor that connects on n bar first grid line is opened, and is positioned at first pixel electrode charging of odd column in feasible colleague's pixel; Simultaneously, TFT5 (n-1) is in opening because of grid has high level, n-1 bar sweep trace with the Vg1 signal can be through opening TFT5 (n-1) and be transferred to n-1 bar second grid line, make n-1 bar second grid line can become the Vg1 signal fast, thus make with n-1 bar second grid line on the pixel electrode that is connected be in hold mode preferably.The scan control principle of other row pixel electrodes is same as described above.In brief, be exactly on n bar first grid line, to export in the high level, be that the grid of the first pixel electrode correspondence of the capable odd column of corresponding n is when opening, rapid output low level on n-1 bar second grid line, promptly the grid of the second pixel electrode correspondence of the capable even column of corresponding n-1 is closed rapidly.
Present embodiment makes when upset takes place external timing signal, first output terminal or second output terminal that Central Plains, selector switch unit is in high level can become low level fast with the voltage that is loaded, the high pressure of eliminating on first grid line or second grid line is residual, corresponding grid is closed rapidly, thereby make corresponding pixel electrode be in hold mode preferably, help reducing the flicker that array base palte occurs in procedure for displaying.
Fig. 4 is a kind of TFT-LCD array base palte of the present invention driving method process flow diagram.As shown in Figure 4, present embodiment comprises:
The line scan signals of step 11, generation one pixel column;
In the above-mentioned driving method, can receive the signal of scan drive circuit by the selector switch device after, produce the line scan signals of a pixel column, more successively to first grid line and the output of second grid line.
In the technique scheme, can be connected with a selector switch device respectively, drive in order to the bi-directional synchronization that realizes array base palte at two ends of first grid line and second grid line.For example: the end at first grid line and second grid line is connected with the first selector switch device, is connected with the second selector switch device at the other end of first grid line and second grid line, then:
Present embodiment produces line scan signals by the selector switch device, reduce data line quantity and data driving chip quantity or data driving chip number of pin, and control second pixel electrode that the colleague is positioned at first pixel electrode of odd column in the pixel and is positioned at even column successively according to a line scan signals timesharing, make the required scanning drive chip quantity of using be half of grid line total quantity, thereby the present invention does not increase the scanning drive chip quantity or the scanning drive chip number of pin of the required use of array base palte reducing data line quantity and data driving chip quantity or data driving chip number of pin simultaneously; In addition, because the selector switch device can adopt existing TFT composition technology, in the array base palte preparation process, is formed directly into the outer peripheral areas of array base palte, thereby can not increase the extra cost for preparing the selector switch device, thereby help reducing the production cost of TFT-LCD.
It will be appreciated by those skilled in the art that, in the technique scheme, if each pixel region setting is two data lines, the situation of two shared grid lines of pixel electrode, the selector switch device also can be formed at along the outer peripheral areas of data line direction of extension (promptly along the Y direction shown in Fig. 1), after being used to receive the data-signal of data drive circuit output, produce the column data signal, and export this column data signal to first data line that is positioned at odd column and second data line that is positioned at even column successively, the pixel region timesharing that the feasible pixel region that is connected with first data line is connected with second data line is alternately obtained the column data signal and is charged.
Fig. 5 is the another kind of TFT-LCD array base palte of the present invention driving method process flow diagram.As shown in Figure 5, present embodiment comprises:
The column data signal of step 21, generation pixel column;
In the above-mentioned driving method, can receive the signal of data drive circuit by the selector switch device after, produce the column data signal of pixel column, more successively to first data line and the output of second data line.
Present embodiment is owing to be provided with the selector switch device, the scanning drive chip quantity of the required use of array base palte or scanning drive chip number of pin, can be reduced to the scanning drive chip quantity of required use on the array base palte that is not provided with the selector switch device or half of scanning drive chip number of pin, and can not increase the number of pin of data driving chip quantity or data driving chip, thereby help reducing the production cost of TFT-LCD.
It should be noted that at last: above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that previous embodiment is put down in writing, and perhaps part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of embodiment of the invention technical scheme.
Claims (4)
1. TFT-LCD array base palte, comprise substrate, be formed with the pixel region that matrix-style is arranged on the described substrate, be formed with first pixel electrode and the first film transistor that is positioned at odd column, second pixel electrode that is positioned at even column and second thin film transistor (TFT) in each pixel region, described the first film transistor drain is connected with first pixel electrode, and the drain electrode of described second thin film transistor (TFT) is connected with second pixel electrode; It is characterized in that,
Be formed with first data line and second data line in each pixel region, described first data line is connected with the transistorized source electrode of the first film, and described second data line is connected with the source electrode of second thin film transistor (TFT); Be formed with a grid line in each pixel region, described grid line is connected with the grid of the transistorized grid of described the first film and second thin film transistor (TFT) respectively.
2. TFT-LCD array base palte according to claim 1 is characterized in that, also be provided with on the described substrate receive data-signal after, produce the column data signal, and successively to the selector switch device of described first data line and the output of second data line.
3. a TFT-LCD array base palte driving method is characterized in that, comprising:
The column data signal of step 21, generation pixel column;
Step 22, export described column data signal, make first pixel electrode charging that is positioned at odd column by the first film transistor that is positioned at odd column to first data line that is positioned at odd column;
Step 23, export described column data signal, make second pixel electrode charging that is positioned at even column by second thin film transistor (TFT) that is positioned at even column to second data line that is positioned at even column.
4. TFT-LCD array base palte driving method according to claim 3 is characterized in that,
Described step 21 comprises: after the selector switch device receives the data drive circuit signal, produce the column data signal of pixel column;
Described step 22 comprises: described selector switch device is exported described column data signal to first data line that is positioned at odd column, makes first pixel electrode charging that is positioned at odd column by the first film transistor that is positioned at odd column;
Described step 23 comprises: described selector switch device is exported described column data signal to second data line that is positioned at even column, makes second pixel electrode charging that is positioned at even column by second thin film transistor (TFT) that is positioned at even column.
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Application publication date: 20110928 |