CN102193187B - Optical filter and analytical equipment thereof - Google Patents
Optical filter and analytical equipment thereof Download PDFInfo
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- CN102193187B CN102193187B CN201110069658.4A CN201110069658A CN102193187B CN 102193187 B CN102193187 B CN 102193187B CN 201110069658 A CN201110069658 A CN 201110069658A CN 102193187 B CN102193187 B CN 102193187B
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- electrode
- diaphragm portion
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- 230000003287 optical Effects 0.000 title claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 76
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- 238000001914 filtration Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 description 17
- 239000000463 material Substances 0.000 description 16
- 230000037250 Clearance Effects 0.000 description 13
- 230000035512 clearance Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000005755 formation reaction Methods 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000007792 addition Methods 0.000 description 7
- 230000000875 corresponding Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N Tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N TiO Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 229910001929 titanium oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N Hafnium(IV) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N Niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
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- 239000000284 extract Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZCUFMDLYAMJYST-UHFFFAOYSA-N thorium dioxide Chemical compound O=[Th]=O ZCUFMDLYAMJYST-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- LJRMFMQHZAVYNS-UHFFFAOYSA-N Bifluoride Chemical compound F[H][F-] LJRMFMQHZAVYNS-UHFFFAOYSA-N 0.000 description 1
- 208000007578 Phototoxic Dermatitis Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical compound [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000005304 joining Methods 0.000 description 1
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- FYYHWMGAXLPEAU-UHFFFAOYSA-N magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative Effects 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N p-acetaminophenol Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229940072033 potash Drugs 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000015320 potassium carbonate Nutrition 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Abstract
The present invention relates to optical filter and analytical equipment, this optical filter is characterised by having: the 1st substrate；1st reflecting mirror, it is arranged at described 1st substrate；1st electrode, it is arranged at described 1st substrate；2nd substrate, it is arranged with described 1st electrode contraposition；2nd reflecting mirror, it is arranged at described 2nd substrate, and opposed with described 1st reflecting mirror；And the 2nd electrode, it is arranged at described 2nd substrate, and with described 1st electrode contraposition, described 2nd substrate is in a top view, there is the groove surrounding described 2nd reflecting mirror, described groove in the cross-section, has the 1st side surface part, the 2nd side surface part, bottom surface sections, the 1st end between described 1st side surface part and described bottom surface sections and the 2nd end between described 2nd side surface part and described bottom surface sections, and described 1st end and described 2nd end have curved surface.
Description
Technical field
The present invention relates to optical filter and analytical equipment etc..
Background technology
In the past, as selecting the light of target wavelength from incident illumination and being allowed to the optical filter of injection,
Knowing a kind of air gap type and be the optical filter of electrostatic drive type, it is by joining opposed for a pair substrate
Put, and opposed faces at these substrates arranges reflecting mirror respectively, sets respectively around these reflecting mirrors
Put electrode, and the reflecting mirror in side be arranged around diaphragm portion, by utilizing these interelectrode
Electrostatic makes diaphragm portion be subjected to displacement and makes the gap (air gap) between these reflecting mirrors change, and extracts
The light of the wavelength wanted.(such as, patent documentation 1).
In such optical filter, the clearance control between needing a pair reflecting mirror during fabrication is from Asia
Micron arrives in the scope that a few micrometers is the least, and it is important that maintains these accurately
Gap between reflecting mirror and control into the gap value wanted.
Patent documentation 1: Japanese Unexamined Patent Publication 2003-57438 publication.
Summary of the invention
But, in the optical filter of air gap type and electrostatic drive type, utilize electrostatic attraction to make barrier film
It is moved so that the gap between reflecting mirror changes.Therefore, according to the thickness of diaphragm portion, come
The applying voltage being used in the electrostatic attraction required for producing the displacement in gap changes.Therefore, for
Applying voltage suppressed relatively low, it is desirable to diaphragm portion is the thinnest.But, make diaphragm portion thinning
This is related to its intensity and reduces, in the optical filter that gap displacement is repeated, owing to carrying out every time
All diaphragm portion is applied during displacement stress, thus there is intensity reduction and i.e. cause destroyed the asking of diaphragm portion
Topic.
The present invention is in order to solve at least some of of above-mentioned problem and to propose, and one of its purpose is to carry
Even if for a kind of in the case of making diaphragm portion thinning to suppress relatively low by applying voltage, also can
The intensity enough suppressing diaphragm portion reduces, and its result can make maximum applying voltage low and make the strong of diaphragm portion
Degree improves, gap displacement is stable and the optical filter that can be driven well and have this
The optical module of optical filter.
The optical filter of the present invention is characterised by having: the 1st substrate；1st reflecting mirror, its quilt
It is arranged at described 1st substrate；1st electrode, it is arranged at described 1st substrate；2nd substrate,
It is arranged with described 1st electrode contraposition；2nd reflecting mirror, it is arranged at described 2nd substrate, and
Opposed with described 1st reflecting mirror；And the 2nd electrode, it is arranged at described 2nd substrate, and with
Described 1st electrode contraposition, described 2nd substrate in a top view, has described 2nd reflecting mirror of encirclement
Groove, described groove in the cross-section, has the 1st side surface part, the 2nd side surface part, bottom surface sections, is positioned at
The 1st end between described 1st side surface part and described bottom surface sections and be positioned at described 2nd side surface part with
The 2nd end between described bottom surface sections, described 1st end and described 2nd end have curved surface.
In the optical filter of the present invention, the end of groove is in curved surface.Thus, relaxed when gap displacement
The produced stress to the end of groove is concentrated, and improves the intensity of diaphragm portion.It is as a result, it is possible to make
Gap displacement is stable such that it is able to carry out gap drive well.
Described optical filter is characterised by, described bottom surface sections is smooth, in a top view, and institute
State described 2nd substrate in the region of the lower section that the 2nd electrode is arranged at described bottom surface sections.
Thereby, it is possible to prevent the deformation along with groove and produce the 2nd electrode crack etc..
Described optical filter is characterised by, described 1st end is positioned at described 2nd reflecting mirror side,
Described 1st end is not in a top view, overlapping with described 2nd reflecting mirror.
Thereby, it is possible to suppression is hidden by the lateral parts of diaphragm portion to the traveling of the light of the 2nd reflecting mirror incidence
Gear, thus carry out good detection.
Described optical filter is characterised by, described 1st substrate and described 2nd substrate have
Photosensitiveness.
So, by making the 1st substrate and the 2nd substrate have light transmission, improve the light transmission of substrate
Rate, and also improve the intensity of the light extracted.Thus, improve the extraction efficiency of light.
Described optical filter is characterised by, described groove is by after having carried out dry ecthing, carries out
Wet etching and formed.
So, Wet-type etching is used by work in-process, it is possible to easily make the shape of end become curved surface,
Relax the stress to end to concentrate, and the intensity of diaphragm portion can have been improved.It addition, do by making
Formula etching is combined with Wet-type etching, it is possible to shortens the time used by processing of groove, and can form groove
End has the structure of curved surface, thus relaxes the stress to end and concentrate and improve the strong of diaphragm portion
Degree.It is as a result, it is possible to realize stable gap displacement, and can drive well.
The analytical equipment of the present invention is characterised by, uses above-mentioned optical filter.
Accompanying drawing explanation
Fig. 1 is the top view of the optical filter of present embodiment.
Fig. 2 is the sectional view of the optical filter of present embodiment.
Fig. 3 is to represent in the optical filter of present embodiment, wavelength and absorbance during no applied voltage
The figure of relation.
Fig. 4 is to represent in the optical filter of present embodiment, wavelength and absorbance when being applied with voltage
The figure of relation.
Fig. 5 is the figure for illustrating the manufacture method of the optical filter of present embodiment.
Fig. 6 is the figure for illustrating the manufacture method of the optical filter of present embodiment.
Fig. 7 is the figure for illustrating the manufacture method of the optical filter of present embodiment.
Fig. 8 is the figure for illustrating the manufacture method of the optical filter of present embodiment.
Fig. 9 is the figure for illustrating the manufacture method of the optical filter of present embodiment.
Description of reference numerals:
1... optical filter, 2... the 2nd substrate, 3... the 1st substrate, 4A, 4B... reflecting mirror, 5... the 1st
Recess, 6A, 6B... electrode, 7... second recesses, 8... diaphragm portion, 11A, 11B... wiring, G1...
1st gap, G2... the 2nd gap.
Detailed description of the invention
Below, the optical filter of the embodiment that the present invention relates to is illustrated.Here, as light
Wave filter, to air gap type and be that the optical filter of electrostatic drive type illustrates.
In Fig. 1 and Fig. 2, reference 1 be air gap type and be electrostatic drive type light filtering
Device.This optical filter 1 is made up of following part: the 2nd substrate 2；1st substrate 3, it is with the 2nd
The opposed state of substrate 2 engages (or bonding) and forms；Reflecting mirror 4A (the 2nd reflection of toroidal
Mirror), it is arranged on the central part of opposed faces 2a with the 1st substrate 3 opposite side of the 2nd substrate 2；
The reflecting mirror 4B (the 1st reflecting mirror) of toroidal, its be formed at the 1st substrate 3 with the 2nd substrate
The bottom center of the 1st recess 5 of the central part in the face of 2 opposite side, with reflecting mirror 4A across the 1st
Clearance G 1 is opposite disposed；Circular electrode 6A (the 2nd electrode), it is arranged on the 2nd substrate 2
Reflecting mirror 4A around；Circular electrode 6B (the 1st electrode), it is being formed at the 1st base
The circular second recesses 7 of the surrounding of the 1st recess 5 of plate 3, with electrode 6A across the 2nd gap
G2 is opposite disposed；The circular diaphragm portion 8 of thin-walled, it is in opposed faces 2a of the 2nd substrate 2
Opposing face side, is formed by etching (selecting to remove) in the position being generally corresponding to electrode 6A.
Diaphragm portion 8 by the 1st side surface part 8c, the 2nd side surface part 8e, bottom surface sections 8a, be positioned at the 1st side
Face 8c and bottom surface sections 8a between the 1st end 8b and be positioned at the 2nd side surface part 8e and bottom surface
The 2nd end 8d between portion 8a is constituted.It addition, diaphragm portion 8, be positioned at reflecting mirror 4A side
The 1st end 8b be formed as the most not overlapping with reflecting mirror 4A.By such structure,
The carrying out to light incident for reflecting mirror 4A can be suppressed to be blocked by the 1st side surface part 8c of diaphragm portion 8.
] and, by electrode 6A, the 6B opposite disposed across the 2nd clearance G 2, and diaphragm portion 8 structure
Become electrostatic actuator.
The material of the 2nd substrate the 2 and the 1st substrate 3 can be used glass as.Specifically, permissible
Be preferably used soda-lime glass, glass ceramics, quartz glass, lead glass, potash glass, pyrex,
Sodium borosilicate glass, alkali-free glass etc..
There is the material of light transmission by making the 2nd substrate the 2 and the 1st substrate 3 jointly use, it is possible to
Electromagnetic wave or the luminous ray of the wavelength band wanted in electromagnetic wave are used as incident illumination.
If it addition, make the 2nd substrate the 2 and the 1st substrate 3 be used in conjunction with semi-conducting material, such as using
Silicon is formed, then near infrared ray can be used as incident illumination.
Reflecting mirror 4A, 4B form across the 1st mutually opposing configuration of clearance G 1, and by height
The multilayer dielectric film of index layer multilamellar alternately laminated with low-index layer is constituted.Additionally, it is anti-
Penetrate mirror 4A, 4B and be not limited to multilayer dielectric film, such as, can also use with silver as main component
Alloy film or their multilayer film etc..
The reflecting mirror 4A of the side in these reflecting mirrors 4A, 4B is owing to being arranged at the deformable 2nd
Substrate 2, thus also referred to as moving reflector, the reflecting mirror 4B of the opposing party is constant owing to being arranged at
1st substrate 3 of shape, thus also referred to as stationary mirror.
When this optical filter 1 is used in the region of luminous ray or ultrared region, such as,
Use titanium oxide (Ti2O), tantalum pentoxide (Ta2O5), niobium pentaoxide (Nb2O5) etc. conduct
The material of the high refractive index layer in formation multilayer dielectric film.It addition, optical filter 1 is being used
During the region of ultraviolet, such as, use aluminium sesquioxide (Al2O3), hafnium oxide (HfO2), two
Zirconium oxide (ZrO2), thorium anhydride (ThO2) etc. as formed high refractive index layer material.
On the other hand, bifluoride magnesium (MgF is such as used2), silicon dioxide (SiO2) etc. as shape
The material of the low-index layer in one-tenth multilayer dielectric film.For this high refractive index layer and low-refraction
The number of plies of layer and thickness, suitably set according to required optical characteristics.Generally, exist
In the case of being formed reflectance coating (reflecting mirror) by multilayer dielectric film, in order to obtain its optical characteristics,
The number of plies needed is more than 12 layers.
Electrode 6A, 6B form across the 2nd clearance G 2 is arranged opposite, and constitute electrostatic and cause
A part for dynamic device, this electrostatic actuator makes these electrodes 6A, 6B according to the driving voltage of input
Between produce electrostatic so that reflecting mirror 4A, 4B are with mutually opposing state relative movement.
Thus, electrode 6A, 6B make diaphragm portion 8 above-below direction displacement in fig. 2 to make reflecting mirror 4A,
The 1st clearance G 1 between 4B changes, thus penetrate the wavelength corresponding with the 1st clearance G 1
Light.
It addition, electrode 6A is as shown in Figure 2, it is arranged on under bottom surface sections 8a of tabular surface
In region, side.Assume make electrode 6A according to the 1st end 8b, the 2nd end 8d with curved surface
In the case of overlapping mode is formed, due to diaphragm portion 8 driving and diaphragm portion 8 strains, lead
Cause the electrode 6A in the lower section being positioned at the 1st end 8b, the 2nd end 8d and produce big stress.From
And, there is electrode 6A and produce the probability of the unfavorable conditions such as crack.But, by by electrode 6A shape
In the lower zone of bottom surface sections 8a of Cheng Cheng tabular surface, it is possible to prevent the deformation along with diaphragm portion 8
The crack etc. of electrode 6A.
Additionally, in the present embodiment, due to the 2nd substrate 2 opposed faces 2a be formed at the 1st
The second recesses 7 of substrate 3 is parallel, thus the most parallel between electrode 6A, 6B.
The material forming these electrodes 6A, 6B is the material of electric conductivity, is not particularly limited,
Such as use the metals such as Cr, Al, Al alloy, Ni, Zn, Ti, Au, or be dispersed with carbon, titanium
Deng resin, polysilicon (Polysilicon), silicon, silicon nitride, ITO etc. are transparent leads for non-crystalline silicon etc.
Electric material etc..
These electrodes 6A, 6B as shown in Figure 1, are connected to connect up 11A, 11B, these electrodes
6A, 6B are connected with power supply (not shown) by these wirings 11A, 11b.
It addition, these wirings 11A, 11B are formed in wiring groove 12A or wiring groove 12B, its
In, wiring groove 12A is formed in the 2nd substrate 2, and wiring groove 12B is formed in the 1st substrate 3.
Therefore, without interference with the joint of the 2nd substrate the 2 and the 1st substrate 3.
Power supply by electrode 6A, 6B apply voltage as drive signal, come drive electrode 6A, 6B,
Thus between electrode 6A, 6B, produce the electrostatic wanted.Additionally, this power supply is connected to control device (not
Diagram), by power supply being controlled by this control device, it is possible to adjust the electricity between electrode 6A, 6B
Potential difference.
Diaphragm portion 8 compared with the position of the 2nd substrate 2 not forming this diaphragm portion 8, thinner thickness.
So, the position that thickness is thin compared with other positions in the 2nd substrate 2 has elasticity (flexible) and energy
Enough deform (movable), and thus this diaphragm portion 8 is by making the 1st clearance G 1 change make reflection
The interval that interval variation between mirror 4A, 4B becomes and the light of wavelength wanted is corresponding, thus have and make to think
The wavelength selection function of the light injection of the wavelength wanted.
Shape and thickness for these diaphragm portions 8, it is possible to make the light injection of the scope of the wavelength wanted
, specifically, it is considered to the variable quantity at the interval between reflecting mirror 4A, 4B and pace of change etc.,
As requested the wave-length coverage of the emergent light of this optical filter 1 and set.
In the optical filter 1 of present embodiment, it is not driven thus exists at control device and power supply
In the case of being not applied to voltage between electrode 6A and electrode 6B, reflecting mirror 4A and reflecting mirror 4B every
The 1st clearance G 1 opposed.Therefore, if to this optical filter 1 incident illumination, then can be as shown in Figure 3
Like that, the light of the wavelength corresponding with the 1st clearance G 1, the light of the wavelength of such as 720nm are penetrated.
Here, ought come applying electricity between electrode 6A and electrode 6B by driving dynamic control device and power supply
During pressure, between these electrodes 6A and electrode 6B, produce corresponding with the size of voltage (potential difference)
Electrostatic.So, by control device, power supply is controlled, it is possible to between electrode 6A, 6B
Apply the voltage wanted, make between electrode 6A and electrode 6B, to produce the electrostatic wanted.When so existing
When producing, between electrode 6A, 6B, the electrostatic wanted, owing to this electrostatic force can make electrode 6A, 6B phase
Attract mutually, thus the 2nd substrate 2 can be to the 1st substrate 3 side deformation, reflecting mirror 4A and reflecting mirror 4B
The 1st clearance G 1 narrow with the situation of no applied voltage.
In the case of Gai, diaphragm portion 8 can produce displacement because of this electrostatic, therefore can the 1st end 8b,
Stress is produced at 2nd end 8d, and according to present embodiment, the 1st end 8b, the 2nd end 8d
Due to the shape that rounded radius is big, therefore stress is difficult to concentrate, even if repeatedly driving diaphragm portion 8,
It is not easy to produce destruction etc., it is possible to the best driving.
Here, if light is incident to this optical filter 1, then can penetrate and displacement as shown in Figure 4
After the light of light such as 590nm wavelength of wavelength of the 1st clearance G 1 correspondence, and transmission peak wavelength to
Short wavelength side offsets.
It follows that referring to the drawings the manufacture method of the optical filter 1 of present embodiment is illustrated.
Fig. 5～9 is the sectional view of the manufacture method of the optical filter 1 representing present embodiment.
This manufacture method has the manufacturing procedure of [1] the 2nd substrate, the manufacturing procedure of [2] the 1st substrates.Under
Face, illustrates successively to each operation.
The manufacturing procedure of [1] the 2nd substrate
As shown in Fig. 5 (a), at whole formation mask layer 51 of the 2nd substrate 2.As composition
The material of mask layer 51, such as, can use the metal films etc. such as Cr/Au.The thickness of mask layer 51
Although being not particularly limited, but about preferably 0.01～1 μm, about more preferably 0.1～0.3 μm.If
Mask layer 51 is the thinnest, there is the situation of the 2nd substrate 2 that can not adequately protect, if mask layer 51 is blocked up,
Then there is the situation that mask layer 51 is easily peeled off due to the internal stress of mask layer 51.In this enforcement
In mode, mask layer 51 forms Cr/Au film by sputtering method and forms, and Cr, Au are respective
Thickness is 0.01 μm and 0.3 μm.
It follows that as shown in Fig. 5 (b), mask layer 51 is formed and is used for forming diaphragm portion 8
Peristome 51a.Peristome 51a such as can be formed by photoetching process.Specifically, at mask
Form the resist layer (not shown) with the pattern corresponding with peristome 51a on layer 51, this is resisted
Erosion oxidant layer is as mask, and after the part removing mask layer 51, carrys out shape by removing resist layer
Become peristome 51a.Additionally, the removing of a part for mask layer 51 can be entered by Wet-type etching etc.
OK.
It follows that as shown in Fig. 5 (c), utilize Wet-type etching that the 2nd substrate 2 is etched,
Thus form diaphragm portion 8.It is, for example possible to use hydrofluoric acid aqueous solution or buffered hydrofluoric acid aqueous solution
Etc. (BHF) as etching solution.It addition, in addition, it is also possible to carry out after carrying out dry-etching
Wet-type etching, forms diaphragm portion 8.Thus, the process time of groove, and the 1st of groove the are shortened
End 8b, the 2nd end 8d can become the structure with curved surface, thus relaxed answering to end
Power is concentrated, and improves the intensity of diaphragm portion 8.
It follows that as shown in Fig. 6 (a), form electrode 6A, wiring 11A.As constituting electrode
6A, the material of wiring 11A, such as, can use as the metal films such as Cr, Al or ITO transparent
Conductive material etc..Electrode 6A, the thickness of wiring 11A are such as preferably 0.1～0.2 μm.
In order to form these electrodes 6A, wiring 11A, vapour deposition method, sputtering method, ion can used
After the formation metal film such as plating method etc., carry out pattern formation by photoetching process and etching.
It follows that at the position 2a ' surrounded by diaphragm portion 8 of opposed faces 2a, form reflecting mirror 4A.
Such as, by titanium dioxide (Ti2O) as the material of formation high refractive index layer, by silicon dioxide (SiO2)
As the material of formation low-index layer, and make them carry out stacking, utilizing stripping method, it is carried out
Pattern obtains reflecting mirror 4A after being formed.
The manufacturing procedure of [2] the 1st substrates
As shown in Fig. 7 (a), shape in opposed faces 3a with the 2nd substrate 2 of the 1st substrate 3
Become mask layer 61.As the material of composition mask layer 61, generally use anticorrosive additive material.
It follows that as shown in Fig. 7 (b), mask layer 61 is formed and is used for forming second recesses 7
Peristome 61a.Peristome 61a can be formed by photoetching process.
It follows that as shown in Fig. 7 (c), utilize Wet-type etching that the 1st substrate 3 is etched, come
Form second recesses 7.Etching solution such as can use hydrofluoric acid aqueous solution or buffered hydrofluoric acid aqueous solution
(BHF) etc..Additionally, the forming method of second recesses 7 is not limited to Wet-type etching, it is also possible to make
With his etching method such as dry-etching.
It follows that after removing mask layer 61 by etching, use identical with the formation of second recesses 7
Main points, form the 1st recess 5.Specifically, the 1st substrate 3 forms mask layer 62,
As shown in Fig. 8 (a), form the peristome 62a for forming the 1st recess 5.Then, as
As shown in Fig. 8 (b), by Wet-type etching, the 1st substrate 3 is etched, forms the 1st recessed
Portion 5.Then, as shown in Fig. 8 (c), remove mask layer 62 by etching, thus had
There is the 1st substrate 3 of the 1st recess 5 and second recesses 7.
It follows that as shown in Fig. 9 (a), form electrode 6B, wiring 11B.As constituting electrode
6A, the material of wiring 11A, such as, can use as the metal films such as Cr, Al or ITO transparent
Conductive material etc..Electrode 6A, thickness the most preferably 0.1～0.2 μm of wiring 11A.
In order to form these electrodes 6A, wiring 11A, utilizing vapour deposition method, sputtering method, ion plating method
After forming metal film etc., photoetching process and etching is utilized to carry out pattern formation.
It follows that form reflecting mirror 4B in the position opposed for reflecting mirror 4A with the 2nd substrate 2.Example
As, by titanium dioxide (Ti2O) as the material of formation high refractive index layer, by silicon dioxide (SiO2)
As the material of formation low-index layer, and make them carry out stacking, carry out pattern utilizing stripping method
Reflecting mirror 4B is obtained after formation.
As described above, according to the optical filter of present embodiment, in order to optionally extract
Wavelength and when making the 1st clearance G 1 change, make diaphragm portion 8 be subjected to displacement, thus the 1st end 8b,
2nd end 8d produces stress, but according to present embodiment, the 1st end 8b, the 2nd end 8d by
In the shape that rounded radius is big, thus stress is concentrated and is become difficulty, carries out being repeated diaphragm portion 8
Drive, it is also difficult to produce destruction etc., it is possible to good driving is repeated.
Additionally, the optical filter of the present invention can be used in the colour examining device that measures color or enters glass
The analytical equipments such as the glass detector that row is measured.
Claims (6)
1. an optical filter, it is characterised in that:
Have:
1st substrate；
1st reflecting mirror, it is arranged at described 1st substrate；
1st electrode, it is arranged at described 1st substrate；
2nd substrate, it is arranged with described 1st electrode contraposition；
2nd reflecting mirror, it is arranged at described 2nd substrate, and opposed with described 1st reflecting mirror；
And
2nd electrode, it is arranged at described 2nd substrate, and with described 1st electrode contraposition,
Described 2nd substrate is glass,
Described 2nd substrate in a top view, has the groove surrounding described 2nd reflecting mirror,
Described groove in the cross-section, has the 1st side surface part, the 2nd side surface part, bottom surface sections, is positioned at
The 1st end between described 1st side surface part and described bottom surface sections and be positioned at described 2nd side surface part
And the 2nd end between described bottom surface sections,
Described 1st end has the 1st curved surface, and described 2nd end has the 2nd curved surface,
In a top view, described it is configured with between described 2nd reflecting mirror and described 2nd side surface part
1 side surface part,
Described 1st curved surface is protruding towards described 2nd reflecting mirror.
Optical filter the most according to claim 1, it is characterised in that:
Described bottom surface sections is smooth,
In a top view, described 2nd electrode is arranged at the described bottom surface sections of described 2nd substrate
In the region of lower section.
Optical filter the most according to claim 1 and 2, it is characterised in that:
Described 1st end is positioned at described 2nd reflecting mirror side,
Described 1st end is not in a top view, overlapping with described 2nd reflecting mirror.
4. according to the optical filter described in any one in claims 1 to 3, it is characterised in that:
Described 1st substrate and described 2nd substrate have transmitance.
5. according to the optical filter described in any one in Claims 1-4, it is characterised in that:
Described groove is by after having carried out dry ecthing, carries out wet etching and is formed.
6. an analytical equipment, it uses the filtering of the light described in any one in claim 1 to 5
Device.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010063923A JP5434719B2 (en) | 2010-03-19 | 2010-03-19 | Optical filters and analytical instruments |
| JP2010-063923 | 2010-03-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102193187A CN102193187A (en) | 2011-09-21 |
| CN102193187B true CN102193187B (en) | 2016-12-14 |
Family
ID=
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4944187A (en) * | 1988-12-23 | 1990-07-31 | Rosemount Inc. | Multimodulus pressure sensor |
| US7542200B1 (en) * | 2007-12-21 | 2009-06-02 | Palo Alto Research Center Incorporated | Agile beam steering mirror for active raster scan error correction |
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4944187A (en) * | 1988-12-23 | 1990-07-31 | Rosemount Inc. | Multimodulus pressure sensor |
| US7542200B1 (en) * | 2007-12-21 | 2009-06-02 | Palo Alto Research Center Incorporated | Agile beam steering mirror for active raster scan error correction |
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