CN102190274B - Micro-electromechanical system device and motion detection method - Google Patents
Micro-electromechanical system device and motion detection method Download PDFInfo
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- CN102190274B CN102190274B CN201110021179.5A CN201110021179A CN102190274B CN 102190274 B CN102190274 B CN 102190274B CN 201110021179 A CN201110021179 A CN 201110021179A CN 102190274 B CN102190274 B CN 102190274B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/003—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring position, not involving coordinate determination
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F13/00—Video games, i.e. games using an electronically generated display having two or more dimensions
- A63F13/20—Input arrangements for video game devices
- A63F13/21—Input arrangements for video game devices characterised by their sensors, purposes or types
- A63F13/211—Input arrangements for video game devices characterised by their sensors, purposes or types using inertial sensors, e.g. accelerometers or gyroscopes
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F13/00—Video games, i.e. games using an electronically generated display having two or more dimensions
- A63F13/20—Input arrangements for video game devices
- A63F13/24—Constructional details thereof, e.g. game controllers with detachable joystick handles
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/16—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by evaluating the time-derivative of a measured speed signal
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
- G01P3/50—Devices characterised by the use of electric or magnetic means for measuring linear speed
- G01P3/52—Devices characterised by the use of electric or magnetic means for measuring linear speed by measuring amplitude of generated current or voltage
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F2300/00—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game
- A63F2300/10—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game characterized by input arrangements for converting player-generated signals into game device control signals
- A63F2300/1043—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game characterized by input arrangements for converting player-generated signals into game device control signals being characterized by constructional details
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- A—HUMAN NECESSITIES
- A63—SPORTS; GAMES; AMUSEMENTS
- A63F—CARD, BOARD, OR ROULETTE GAMES; INDOOR GAMES USING SMALL MOVING PLAYING BODIES; VIDEO GAMES; GAMES NOT OTHERWISE PROVIDED FOR
- A63F2300/00—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game
- A63F2300/10—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game characterized by input arrangements for converting player-generated signals into game device control signals
- A63F2300/105—Features of games using an electronically generated display having two or more dimensions, e.g. on a television screen, showing representations related to the game characterized by input arrangements for converting player-generated signals into game device control signals using inertial sensors, e.g. accelerometers, gyroscopes
Abstract
A micro-electromechanical apparatus for detecting mechanical displacement comprises at least a first capacitor having first and second capacitor plates spaced from one another, the first and second plates having different work functions and being electrically connected with each other, wherein the plates are movable with respect to one another such that a spacing between the plates changes in response to a force, a current through the capacitor being representative of a rate of change in the spacing between the plates at a given time. A motion sensor provided by the invention is faster, cheaper, and/or more accurate.
Description
Technical field
The present invention relates to the apparatus and method of sense movement (detecting motion).
Background technology
In modern PlayStation 3 videogame console/PS3 (video game controller), according to measured capacitance, detect action.Fig. 1 knownly be take capacitance measurement (capacitance measurement) as basic motion sensor (motion detector) 10.Motion sensor 10 comprises two metallic plates 12 and 14, and metallic plate 12 and 14 is separated by small space D.One of them metallic plate is fixed, and another one metallic plate can along with external force (force) freely the direction as shown in Fig. 1 arrow move.A kind of structure of spring, as bellows retractable sack (bellow) or barrier film (diaphragm) 16, be positioned over the centre of two metallic plates 12 and 14, and after the motion with respect to other one, make metallic plate 12 and 14 to getting back to static relation (static relationship) at caused two metallic plates of external force (force).If moved, two metallic plates 12 and 14 s' space D can become space D '.The difference that space D and D ' are small will cause the capacitance (capacitance) between two metallic plates to change.In the process of motion, by measurement capacitance, can calculate acceleration, speed and the distance of motion.Nintendo ' s
game console be exactly to be used as basis with such principle.
The capacitance of capacitor 10 can be represented by following formula: C=x*y* ε/D, and wherein x*y represents the area of metallic plate 12 and 14, and ε is the dielectric constant of metallic plate 12 and 14 s' dielectric medium, and D is metallic plate 12 and 14 s' spacing.In known motion sensor, the variation of its capacitance is very small and is difficult for measuring under instant state, therefore needs a kind of faster, cheaply and/or precisely errorless motion sensor.
Summary of the invention
In view of this, the invention provides a kind of MEMS devices, be applicable to sensing mechanical displacement, comprise: at least one the first capacitor, there are the first and second capacitor plates, it is apart the position of a spacing each other that the first and second capacitor plates are arranged at, the first and second capacitor plates have different work functions and are electrically connected mutually, wherein one of first and second battery lead plates can move with respect to another one, make spacing between the first and second capacitor plates along with an external force changes, the flow through electric current representative speed that above-mentioned spacing changes within the specific time of the first capacitor.
The present invention also provides another MEMS devices, comprising: a fixed support part; One biasing element, is attached on fixed support part, to depart from respect to fixed support part; At least one the first capacitor plate, is connected and fixed support component; And at least one the second capacitor plate, connect biasing element, the second capacitor plate is parallel to the first battery lead plate and the spacing of being separated by, the first and second capacitor plates form at least one the first capacitor, the first and second capacitor plates have different work functions and are electrically connected mutually, in order to an electric current of first capacitor of flowing through to be provided, the electric current of first capacitor of flowing through be take the bias of biasing element and is basis.
The present invention also provides a kind of sense movement method, be applicable to a motion sensor of a MEMS devices, comprise the following steps: to provide at least one first capacitor with at least one the first capacitor plate and at least one the second capacitor plate, the first and second capacitor plates spacing of being separated by, be electrically connected mutually and there is different work functions, wherein one of first and second battery lead plates can move with respect to other one, and spacing is changed with an external force; And monitoring flow is through an electric current of the first capacitor, the change of electric current representative spacing in special time.
Motion sensor provided by the invention faster, cheap and/or precisely errorless, be applicable to sensing mechanical displacement.
For above and other object of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and coordinate accompanying drawing, be described in detail below:
Accompanying drawing explanation
Fig. 1 knownly be take capacitance measurement as basic motion sensor.
Fig. 2 a is an embodiment of the capacitor of the embodiment of the present invention, and wherein each capacitor plate is consisted of metal level and semiconductor material layer, and wherein the semiconductor material layer of two capacitor plates is the semi-conducting materials with different doping.
Fig. 2 b is another embodiment of the capacitor of the embodiment of the present invention, and wherein two capacitor plates are the semi-conducting materials with different doping.
Fig. 2 c is another embodiment of the capacitor of the embodiment of the present invention, and wherein two capacitor plates are that metal material by two different work functions is formed.
Fig. 2 d is another embodiment of the capacitor of the embodiment of the present invention, and wherein two capacitor plates are consisted of the different semi-conducting material with different work functions.
Fig. 3 is the motion sensor with capacitor sensor of the embodiment of the present invention, and wherein capacitor sensor is arranged along three different axles.
Fig. 4 is the current sensor that the capacitor of the embodiment of the present invention uses.
Fig. 5 is the sensor with differential sensing function of the embodiment of the present invention.
Fig. 6 is the motion sensor of the embodiment of the present invention, comprising a plurality of capacitor arrangement, becomes interdigital assembly.
Wherein, description of reference numerals is as follows:
10: motion sensor
12,14: metallic plate
16: barrier film
D: spacing
100,100A～100D, 200: capacitor
110A～110D, 120A～120D: capacitor plate
112: conducting contact layer
114:N type semiconductor material layer
116:P type semiconductor material layer
130: be electrically connected
140: flexible member
R1～R6: resistance
C1: electric capacity
I1: the first electric current
I2: the second electric current
I3: reference current
I4: transient current
VDD: power supply node
A, B: node
M1: junction field effect transistor
M2, M3:NMOS transistor
Vbias: voltage
210: comparator
Vout: differential output signal
300: interdigital assembly
310,320: comb electrode portion
311,321: limb portion
312,322: capacitor plate arm
323: the first sides
324: the second sides
The specific embodiment
As the explanation of illustration embodiment, can be understood coordinating under relevant drawings, these figure are the rate of the examining part of whole part of explanation.In the explanation of disclosed embodiment, any reference about direction or orientation is only used easily as explanation, and therefore can not cause the restriction of the field of the invention.With regard to for example " end (lower) ", " top (upper) ", " level (horizontal) ", " vertical (vertical) ", " on (above) ", " under (below) ", " upwards (up) ", " (down) downwards ", the relational language of " top (top) " and " end (bottom) " and derivative term thereof are (for example: " flatly (horizontally) ", " down (downwardly) ", " up (upwardly) " etc.), in explanation or while being presented in the discussion in figure, these relational languages and derivative term thereof are in order to the use as orientation.These relational languages are only used for convenience of explanation, and need under a particular orientation, for device, not carry out construction or operation.Only explanation has utilized alternate manner especially, otherwise for example " will ... be additional to (attached) ", " will ... be fixed on (affixed) ", " will ... be connected in (connected) ", " will's ... interconnect (interconnected) " nomenclature be shown between many structures, utilized many intermediate structures, to reach each other fixing or attach directly or indirectly under the effect of removable or rigid attachment or relation.With regard to the term of the relation in order between description scheme/element " is adjacent to (adjacent) ", the existence that this " is adjacent to (adjacent) " and has comprised relevant discrete structure/interelement direct contact and have other intermediate structure/element between discrete structure/element.Moreover; combination by preferred embodiment explanation possible non-limiting feature of the present invention is not especially in order to limit the present invention; these non-limiting features can individualisms or are the combination of further feature, and protection scope of the present invention is when being as the criterion depending on the claim person of defining who encloses.
The invention provides a kind of in MEMS (electromechanical, MEMS) device in order to detect the apparatus and method of mechanical displacement.The mensuration of displacement is that to detect electric current be basis, and wherein above-mentioned electric current is by regulating the spacing between two capacitor plates (capacitor plate) to be produced, and capacitor plate is made by the not identical material of work function.Work function (work function) removes from the surface of conductive material or semiconductive material the least energy that an electron institute needs, if two capacitor plates are electrically connected mutually, two capacitor plates produce built in field because of the work function difference of storeroom, the electric field that crosses capacitor carrys out modulation by the spacing between two capacitor plates, that is to say, under poised state, between two capacitor plates, there is a built in field, and there is no current flowing in this system.If the spacing between two capacitor plates changes, by changes electric field and there is current flowing, the size by measurement electric current, can calculate the variation of two capacitor plate spacings.The electric current that passes through capacitor represents the speed that two capacitor pole board spaces change, the translational speed of capacitor plate for example, and the motion sensor in MEMS devices can be so as to calculating acceleration.Disclosed motion sensor has a wide range of applications, as PlayStation 3 videogame console/PS3 (video game controller), joystick (joy stick), accelerometer (accelerometer), gyroscope (gyroscope) and safety device (safety device), as air bag (airbag deployment) etc.
Capacitor plate can be consisted of the metal of two different work functions, the metal/semiconductor structure with different work functions, the semi-conducting material with different work functions, the semi-conducting material with different doping or the combination of these different materials or structure.The embodiment that Fig. 2 a to Fig. 2 d is MEMS devices of the present invention, it represents respectively the electric capacity of the capacitor plate with different work functions.Fig. 2 a has the capacitor 100A of capacitor plate 110A and 120A, and wherein capacitor plate 110A and 120A are arranged at each other at a distance of being the position of space D.Dielectric medium between capacitor plate 110A and 120A is set as air or vacuum.Each capacitor plate 110A and 120A are consisted of metal level, for example aluminium, tungsten, titanium, gold or metal that some are applicable to the processing procedure of specific MEMS devices and contribute to form semiconductor layer.Capacitor plate 110A comprises N-type semiconductor material (for example silicon) layer 114, for example, and capacitor plate 120A comprises P-type semiconductor material (silicon) layer 116, the work function of capacitor plate is by between capacitor plate 110A and 120A, towards gap, the work function of the material of (gap) (being N-type semiconductor material layer 114 and P-type semiconductor material layer 116) is determined.Conducting contact layer (metal level) 112 can be in order to specific work function (if between capacitor plate and towards gap) to be provided, or as shown in Figure 2 a in order to low-resistance connection to be provided.
If make the spacing of two capacitor plates change after two capacitor plate relative motions, can generation current.This magnitude of current can calculate (for plane-parallel capacitor) by following formula: I=-ΔΦ * x*y* ε/e[1/D-1/D ']/Δ t=A* Δ D/[Δ t (D*D ')], wherein A is structure (structure) constant, this area (x*y) that is same as capacitor plate is multiplied by (ε/e), ε is dielectric constant (if the dielectric constant of vacuum is 1), D-D ' is Δ D (the spacing variable quantities of two capacitor plates in special time), and Δ t is the variable quantity of time.This expression has illustrated that detected electric current is the relative velocity that is proportional to two capacitor plates.
The relative motion meeting of capacitor plate produces acceleration/transient current (AC/transient current).Suppose that the distance between two capacitor plates is very not large, this electric current will be proportional to the translational speed (Δ D/ Δ t) of capacitor plate, detection speed can obtain the change (Δ v) of speed within the special time cycle (Δ t) continuously, speed is acceleration to the first-order derivative of time (Δ v/ Δ t), therefore, capacitor can be used for being used as the motion detector of sense acceleration.
Although understand the physical characteristic of the flexible member that adheres to the first and second capacitor plates, be helpless to finding speed and acceleration, but because Δ D has the characteristic that depends upon flexible member, so the physical characteristic energy help of understanding flexible member obtains the information of motion sensor sensitivity, in certain embodiments, the maximum of Δ D is only between 1 micron to several microns.
Fig. 2 b is capacitor 100B, and wherein two capacitor plates are the semi-conducting material with different doping, for example N+ and P+.In this embodiment, capacitor plate 110B is the semi-conducting material of N-shaped doping, and capacitor plate 120B is the semi-conducting material of p-type doping.
Fig. 2 c is capacitor 100C, and wherein two capacitor plates are that metal material by two different work functions is formed.Capacitor plate 110C is consisted of one first metal, and capacitor plate 120C is consisted of one second metal.
Fig. 2 d is capacitor 100D, and wherein two capacitor plate 110D and 120D are consisted of the different semi-conducting material with different work functions.Capacitor plate 110D is formed (for example N-shaped/p-type doped silicon) and capacitor plate 120D is formed (for example N-shaped/p-type doped silicon) by one second semi-conducting material by one first semi-conducting material.Different alloys, different levels of doping, the basic material of different semiconductor or any combination on it all can provide the material with different work functions.By such example, N-type silicon materials and P type silicon materials work function difference desired value are to approach 1.1eV, and work function difference that some metal produces surpasses especially in 2eV.
Fig. 3 is another embodiment for MEMS devices, MEMS devices can be used as the have capacitance sensor motion sensor of (capacitor sensor) in this embodiment, wherein capacitor sensor is arranged along three different axles, and three different axles are respectively vertical axis (vertical axis), transverse axis (lateral axis) and the longitudinal axis (longitudinal axis).By these directions, set up a three-dimensional accelerometer in order to three axial acceleration of sensing.
Fig. 4 is another embodiment of MEMS devices, MEMS devices can comprise a capacitor 100 that is connected to a current sensor (current sensor) in this embodiment, capacitor 100 can be capacitor 100A～100D as above, for example, capacitor has the capacitor plate of two different work functions, and one of capacitor plate is compared another one along with the external force application of force has mobility.Specifically, capacitor 100 is in parallel with resistance R 1, in order to produce one first electric current I 1.The first electric current I 1 is by junction field effect transistor (junction field effect transistor, JFET) amplifying stage (amplification stage) carrys out mirror (mirror) and amplifies (amplify), and wherein junction field effect transistor amplifying stage comprises junction field effect transistor M1, resistance R 2, R3 and R4 and capacitor C 1.Resistance R 4 and junction field effect transistor M1 form amplifier (amplifier), resistance R 2 and R4 in order to bias voltage junction field effect transistor M1 to perfect condition (desiredstate), flow through resistance R 2 and junction field effect transistor M1 of one second electric current I 2 wherein.Capacitor C 1 is according to the Dc bias (DC bias) of MEMS devices (MEMS element) decoupling (decouple) junction field effect transistor grid, the electric current that resistance R 1 produces according to MEMS devices (MEMS-generatedcurrent) provides a voltage drop (voltage drop), and this voltage drop can be exaggerated device and detect.
Fig. 5 is another embodiment of MEMS devices, and MEMS devices can be used as the sensor with differential sensing function in this embodiment.This embodiment utilizes two capacitors 100 and 200.The method that capacitor 100 forms as previously mentioned, that is to say that capacitor 100 has the capacitor plate of two different work functions, the separated and spacing of being separated by of two capacitor plates, and one of two capacitor plates can move with respect to other one along with external force.The second capacitor 200 is to be same as the first capacitor 100, and only two capacitor plates are relatively-stationary, to reference current is provided.Each capacitor is connected to the source electrode of nmos pass transistor M2 or M3, and nmos pass transistor M2 and M3 are biased under conducting state (on state) by voltage Vbias.Resistance R 6 and R5 are connected to respectively the drain of nmos pass transistor M2 and M3.Reference level (reference stage; For example resistance R 5, nmos pass transistor M3 and capacitor 200) produce reference current I3, detect a level (detection stage; For example resistance R 6, nmos pass transistor M2 and capacitor 100) produce transient current (transient current) I4, reference current I3 and transient current I4 can produce respectively voltage drop (voltage drop) on resistance R 5 and R6.The resulting voltage of node A and B will come comparison and amplification by differential amplifier.Capacitor 100 and 200 is parallel to each other being connected between two power supply node VDD, capacitor 100 coupled in series resistance R 6, capacitor 200 coupled in series resistance R 5; Comparator 210 has first input end and is coupled to node A; The second input is coupled to Node B; And one output in order to a differential output signal Vout to be provided, wherein capacitor 200 and resistance R 5 be in the upper coupled in series of node A, and capacitor 100 and resistance R 6 coupled in series in Node B.
Fig. 6 is another embodiment of MEMS devices, and MEMS devices can be used as a motion sensor in this embodiment.This MEMS devices comprises that a plurality of capacitor arrangement become an interdigital assembly (interdigitated assembly) 300.Interdigital assembly 300 comprises the first and second comb electrode portions (comb electrode section) 310 and 320, and above-mentioned the first and second comb electrode portions 310 and one of 320 with respect to other one along the direction of arrow (the direction of the arrow) movably.For instance, the first comb electrode portion 310 is fixed, and the second comb electrode portion 320 can freely move with respect to the first comb electrode portion 310, vice versa.The first comb electrode portion 310 comprises a plurality of capacitor plate arms (capacitor plate arm) 312, and capacitor plate arm 312 is extended by limb (or claiming stem) portion 311.These capacitor plate arms 312 are consisted of the material with the first work function.The second comb electrode portion 320 comprises a plurality of capacitor plate arms 322, and capacitor plate arm 312 is extended by limb portion 321.Each capacitor plate arm 322 comprises the first side 323 and the second side 324, form the material work function of the first side 323 identical with the first work function of capacitor plate arm 312, form the material work function (the second work function) of the second side 324 not identical with the first work function of capacitor plate arm 312, the capacitor that each the second side 324 and each capacitor plate arm 312 form separately.So the structure of interdigital comprises a plurality of capacitors, and each capacitor comprises having the first capacitor electrode pole plate of the first work function and second capacitor plate with the second work function.When the first and second comb electrode portions 310 and 320 do relative motion, the second side 324 of capacitor and 312 formed space D of capacitor plate arm change accordingly, and the limb of each electric capacity (capacitor plate) can generation current.Produced electric current detects by electrical contact (electrical contacts) in limb portion 311 and 321.The sum total of these electric currents can be detected, and detected electric current is on average obtained to best actual displacement index to there being the sum of contribution capacitor to do.Compared with Single Capacitance device, produce compared with little electric current and its variation is not obvious, compared with large electric current and it has that significantly to change be to detect than being easier to, be applicable to sensor accurately.Be worth mentioning, these capacitor plate arms are consisted of identical work function, so generation current mutually not.
The first and second comb electrode portions 310 in Fig. 6 and one of 320 are parts for fixed support part (fixed support member) additional on substrate, or are connected to fixed support part additional on substrate; One is connected to biasing element (deflection member) in addition, or be a part in biasing element, and biasing element adheres to fixed support part by flexible member as the aforementioned, to supporter is done to relative departing from (deffect).The fixed support part of any kind and biasing element one of all can foregoing location capacitor plate with respect to another one, described in prior art, these fixed support parts and biasing element can be the known technologies in condenser type motion sensing (capacitive motion detection) field, and for supporting one of capacitor plate with bias motion sensor 10 with respect to another one.
Aforementioned disclosed capacitor arrangement can be bonded to sensing element wafer (sense elementchip) conventionally; though do not draw, the element of sensing element wafer institute combination comprises interface electronic wafer (interfaceelectronics chip), substrate (substrate), ceramic wafers carrier (ceramic chip carrier) or other structures similar in appearance to condenser type motion sensor technology.
Although the present invention discloses as above with preferred embodiment; yet it is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, so the scope that protection scope of the present invention ought define depending on the claim of enclosing is as the criterion.
Claims (10)
1. a MEMS devices, is applicable to sensing mechanical displacement, comprising:
At least one the first capacitor, there are the first and second capacitor plates, it is apart the position of a spacing each other that above-mentioned the first and second capacitor plates are arranged at, above-mentioned the first and second capacitor plates have different work functions and are electrically connected mutually, wherein one of above-mentioned first and second battery lead plates can move with respect to another one, make above-mentioned spacing between above-mentioned the first and second capacitor plates along with an external force changes, the electric current of above-mentioned the first capacitor of the flowing through representative speed that above-mentioned spacing changes within the specific time; And
One second capacitor, third and fourth capacitor plate with each interval, above-mentioned the third and fourth capacitor plate is arranged at is separated by a spacing and has different work functions, wherein above-mentioned the third and fourth capacitor plate arranges regularly, make spacing between above-mentioned the third and fourth capacitor plate not along with above-mentioned external force changes, in order to produce a reference current of above-mentioned the second capacitor of flowing through.
2. MEMS devices as claimed in claim 1, wherein above-mentioned the first and second capacitor plates comprise first and second metal materials with different work functions.
3. MEMS devices as claimed in claim 1, wherein above-mentioned the first and second capacitor plates comprise the first and second semi-conducting materials and a conducting contact layer with different work functions, and above-mentioned conducting contact layer is coupled to above-mentioned the first and second semi-conducting materials.
4. MEMS devices as claimed in claim 1, wherein above-mentioned MEMS devices comprises that three above-mentioned the first capacitors are respectively along a vertical axis, a transverse axis and longitudinal axis arrangement, in order to the motion on the above-mentioned vertical axis of sensing, above-mentioned transverse axis and the above-mentioned longitudinal axis.
5. MEMS devices as claimed in claim 1, wherein above-mentioned MEMS devices comprises that a plurality of above-mentioned the first capacitor arrangement become an interdigital assembly, above-mentioned interdigital assembly comprises:
One first comb electrode portion, has a plurality of the first capacitor plate arms, and above-mentioned the first capacitor plate arm has one first work function; And
One second comb electrode portion, there are a plurality of the second capacitor plate arms, above-mentioned the second comb electrode portion and above-mentioned the first comb electrode portion cross one another, above-mentioned the second capacitor plate arm comprises one first material, has above-mentioned the first work function and position in one first side towards above-mentioned the first capacitor plate arm; And one second material, there is one second work function and position in one second side towards above-mentioned the first capacitor plate arm, wherein above-mentioned the first work function is different from above-mentioned the second work function.
6. MEMS devices as claimed in claim 1, more comprises:
One first resistance, above-mentioned the first capacitor of coupled in series;
One second resistance, above-mentioned the second capacitor of coupled in series, and above-mentioned the first and second capacitors are parallel to each other is connected between two power supply nodes;
One comparator, has a first input end, is coupled to a first node, above-mentioned the first capacitor and above-mentioned the first resistance coupled in series on above-mentioned first node;
One second input, is coupled to a Section Point, above-mentioned the second capacitor and above-mentioned the second resistance coupled in series on above-mentioned Section Point; And
One output, in order to provide a differential output signal.
7. a MEMS devices, comprising:
One fixed support part;
One biasing element, is attached on above-mentioned fixed support part, to depart from respect to above-mentioned fixed support part;
At least one the first capacitor plate, connects above-mentioned fixed support part;
At least one the second capacitor plate, connect above-mentioned biasing element, above-mentioned the second capacitor plate is parallel to above-mentioned the first battery lead plate and the spacing of being separated by, above-mentioned the first and second capacitor plates form at least one the first capacitor, above-mentioned the first and second capacitor plates have different work functions and are electrically connected mutually, in order to an electric current of above-mentioned the first capacitor of flowing through to be provided, the above-mentioned electric current of above-mentioned the first capacitor of flowing through is to take the bias of above-mentioned biasing element to be basis; And
One second capacitor, third and fourth capacitor plate with each interval, above-mentioned the third and fourth capacitor plate is arranged at is separated by a spacing and has different work functions, wherein above-mentioned the third and fourth capacitor plate arranges regularly, make spacing between above-mentioned the third and fourth capacitor plate not along with above-mentioned external force changes, in order to produce a reference current of above-mentioned the second capacitor of flowing through.
8. MEMS devices as claimed in claim 7, wherein above-mentioned fixed support part and above-mentioned biasing element depend on mutually by a flexible member.
9. MEMS devices as claimed in claim 7, wherein above-mentioned fixed support part comprises that a plurality of above-mentioned the first capacitor plates and above-mentioned biasing element have a plurality of above-mentioned the second capacitor plates, wherein above-mentioned the first and second capacitor plates are arranged in interdigital assembly in order to form a plurality of above-mentioned the first capacitors, the material in one first side of above-mentioned the first capacitor plate and one second side with one first work function, in one first side of above-mentioned the second capacitor plate, there is the material in the material of above-mentioned the first work function and one second side of above-mentioned the second capacitor plate with one second work function, above-mentioned the first work function is different from above-mentioned the second work function.
10. a sense movement method, is applicable to a motion sensor of a MEMS devices, comprises the following steps:
At least one first capacitor with at least one the first capacitor plate and at least one the second capacitor plate is provided, above-mentioned the first and second capacitor plates spacing of being separated by, be electrically connected mutually and there is different work functions, wherein one of above-mentioned first and second battery lead plates can move with respect to other one, and above-mentioned spacing is changed with an external force;
Monitoring flow is through an electric current of above-mentioned the first capacitor, and above-mentioned electric current represents the change of above-mentioned spacing in special time; And
One second capacitor with the third and fourth capacitor plate is provided, above-mentioned the third and fourth capacitor plate spacing of being separated by, and there is different work functions, wherein above-mentioned the third and fourth capacitor plate arranges regularly, spacing between above-mentioned the third and fourth capacitor plate is not changed with above-mentioned external force, in order to a reference current of above-mentioned the second capacitor of flowing through to be provided, wherein above-mentioned monitoring flow comprises electric current generation one first voltage according to above-mentioned the first capacitor of flowing through through the step of the above-mentioned electric current of above-mentioned the first capacitor, according to above-mentioned reference current, produce a second voltage, and more above-mentioned the first and second voltages.
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| US12/720,813 US8549922B2 (en) | 2010-03-10 | 2010-03-10 | Motion detection using capacitor having different work function materials |
| US12/720,813 | 2010-03-10 |
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| CN102190274A (en) | 2011-09-21 |
| US8857260B2 (en) | 2014-10-14 |
| US20140009175A1 (en) | 2014-01-09 |
| US8549922B2 (en) | 2013-10-08 |
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