CN102165851B - 用于恶劣环境的印刷电路板 - Google Patents
用于恶劣环境的印刷电路板 Download PDFInfo
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- CN102165851B CN102165851B CN200980137789.2A CN200980137789A CN102165851B CN 102165851 B CN102165851 B CN 102165851B CN 200980137789 A CN200980137789 A CN 200980137789A CN 102165851 B CN102165851 B CN 102165851B
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- pcb
- assembly
- cavity
- plate
- circuit
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052737 gold Inorganic materials 0.000 claims abstract description 21
- 239000010931 gold Substances 0.000 claims abstract description 21
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 3
- 239000010936 titanium Substances 0.000 claims abstract description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000004568 cement Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052863 mullite Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- ZMHWQAHZKUPENF-UHFFFAOYSA-N 1,2-dichloro-3-(4-chlorophenyl)benzene Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC(Cl)=C1Cl ZMHWQAHZKUPENF-UHFFFAOYSA-N 0.000 abstract description 15
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000011161 development Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 10
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 239000000567 combustion gas Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/183—Components mounted in and supported by recessed areas of the printed circuit board
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
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- H05K7/00—Constructional details common to different types of electric apparatus
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- H01L2924/10161—Shape being a cuboid with a rectangular active surface
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
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- H01L2924/15165—Monolayer substrate
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0271—Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
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- H05K1/02—Details
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
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- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
- H05K2201/10674—Flip chip
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- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/049—Wire bonding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
Description
Claims (9)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10044208P | 2008-09-26 | 2008-09-26 | |
US61/100442 | 2008-09-26 | ||
US12/327348 | 2008-12-03 | ||
US12/327,348 US8076587B2 (en) | 2008-09-26 | 2008-12-03 | Printed circuit board for harsh environments |
PCT/US2009/055801 WO2010036496A1 (en) | 2008-09-26 | 2009-09-03 | Printed circuit board for harsh environments |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102165851A CN102165851A (zh) | 2011-08-24 |
CN102165851B true CN102165851B (zh) | 2014-05-07 |
Family
ID=42056160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN200980137789.2A Expired - Fee Related CN102165851B (zh) | 2008-09-26 | 2009-09-03 | 用于恶劣环境的印刷电路板 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8076587B2 (zh) |
EP (1) | EP2340694B1 (zh) |
KR (1) | KR101263312B1 (zh) |
CN (1) | CN102165851B (zh) |
BR (1) | BRPI0919042A2 (zh) |
CA (1) | CA2738433C (zh) |
WO (1) | WO2010036496A1 (zh) |
Families Citing this family (10)
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US8803703B2 (en) | 2008-08-15 | 2014-08-12 | Siemens Energy, Inc. | Electronic circuitry for high-temperature environments |
US8220990B2 (en) * | 2008-08-15 | 2012-07-17 | Siemens Energy, Inc. | Wireless telemetry electronic circuit package for high temperature environments |
US8952674B2 (en) | 2012-06-29 | 2015-02-10 | Siemens Energy, Inc. | Voltage regulator circuitry operable in a high temperature environment of a turbine engine |
US8766720B2 (en) | 2012-06-29 | 2014-07-01 | Siemens Energy, Inc. | Hybrid load differential amplifier operable in a high temperature environment of a turbine engine |
US8072764B2 (en) * | 2009-03-09 | 2011-12-06 | Apple Inc. | Multi-part substrate assemblies for low profile portable electronic devices |
EP2867636B1 (en) * | 2012-06-29 | 2017-02-22 | Siemens Energy, Inc. | Electronic circuitry for high-temperature environments |
US9420356B2 (en) | 2013-08-27 | 2016-08-16 | Siemens Energy, Inc. | Wireless power-receiving assembly for a telemetry system in a high-temperature environment of a combustion turbine engine |
US9194250B1 (en) * | 2014-05-07 | 2015-11-24 | General Electric Company | Embedded wireless sensors for turbomachine component defect monitoring |
CN105708030B (zh) * | 2014-06-01 | 2017-09-26 | 云朵网络有限公司 | 一种连接件以及包括该连接件的鞋 |
CN103976497B (zh) * | 2014-06-01 | 2016-07-06 | 云朵网络有限公司 | 一种连接件以及包括该连接件的鞋 |
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- 2009-09-03 BR BRPI0919042A patent/BRPI0919042A2/pt not_active IP Right Cessation
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- 2009-09-03 WO PCT/US2009/055801 patent/WO2010036496A1/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
CN102165851A (zh) | 2011-08-24 |
KR20110063787A (ko) | 2011-06-14 |
US8076587B2 (en) | 2011-12-13 |
WO2010036496A1 (en) | 2010-04-01 |
US20100078202A1 (en) | 2010-04-01 |
KR101263312B1 (ko) | 2013-05-16 |
CA2738433C (en) | 2014-05-20 |
CA2738433A1 (en) | 2010-04-01 |
EP2340694A1 (en) | 2011-07-06 |
EP2340694B1 (en) | 2014-12-17 |
BRPI0919042A2 (pt) | 2015-12-08 |
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