CN102143990A - Compound for filling small gaps in semiconductor device, composition comprising the compound and process for fabricating semiconductor capacitor - Google Patents
Compound for filling small gaps in semiconductor device, composition comprising the compound and process for fabricating semiconductor capacitor Download PDFInfo
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- CN102143990A CN102143990A CN2008801309547A CN200880130954A CN102143990A CN 102143990 A CN102143990 A CN 102143990A CN 2008801309547 A CN2008801309547 A CN 2008801309547A CN 200880130954 A CN200880130954 A CN 200880130954A CN 102143990 A CN102143990 A CN 102143990A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
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- H—ELECTRICITY
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Provided is a compound suitable for use in a node separation process for the fabrication of a semiconductor capacitor. The molecular weight of the polymer remains substantially unchanged during storage. In addition, the polymer is dissolved at a desired rate in an alkaline developing solution and is highly stable without any significant change in dissolution rate (DR) during storage. Also provided is a composition comprising the compound. The composition is highly stable during storage. Therefore, the composition is suitable for filling small gaps in a semiconductor device.
Description
Technical field
The composition that the present invention relates to be used for the interior closely spaced organosilicon polymer of filling semiconductor device and comprise this organosilicon polymer.More specifically, the present invention relates to node isolating polymer (NSP), it remains unchanged at the lay up period molecular weight, and because the existence of terminal carboxyl(group) and end-blocking hydroxyl, dissolution rate (DR) at lay up period does not have under the significantly change, and it dissolves with needed speed in alkaline development solution.In addition, the present invention relates to comprise the composition of this node isolating polymer,, therefore be applicable to the manufacturing of semiconductor capacitor to reach good storage stability.
Background technology
Be used for the interior closely spaced ideal composition of filling semiconductor device and must meet following requirement: (1) must be able to utilize general spin coating technique completely filled at the hole of substrate, the aspect ratio of this hole (be height/diameter than) be 1 or above and diameter be 70nm or more than, and substrate must be able to be flattened to the thickness with homogeneous; (2) in coat film, must there be space and crack; (3) no matter the hole density in the substrate how, the thickness of film must homogeneous; (4) after thermofixation, the film of planarization must be removed with needed speed, and not stay any resistates in hole inside by utilizing the processing of hydrofluoric acid solution; And (5) coating composition must be stable at lay up period.
Be used in the little gap of filling semiconductor device inside based on the polymkeric substance of carbon.The microminiaturization that semiconductor device is recent, the size of guide holes is reduced to and is lower than 70nm.Yet when tradition was removed by ashing (ashing) at last based on the polymkeric substance of carbon, the internal surface of hole was by alligatoring, and it causes the difficulty of using dielectric materials in subsequent process steps.
Therefore, need be for the closely spaced novel composition of filling semiconductor device inside, it is eliminated the demand of ashing reducing the cost of processing units, and can utilize Wet-type etching, use the hydrofluoric acid solution that is present in the oxide compound in the patterning hole for removing, and remove effectively.
From the angle of processing units and cost reduction, can eliminate the closely spaced novel composition that is used for filling semiconductor device inside (being node isolating polymer (NSP) composition) to the demand of ashing, expected to have extra advantage.
Can eliminate novel NSP material, be filled in the hole of patterning, and then use, utilize Wet-type etching and remove for the hydrofluoric acid solution of removing the oxide compound that is used for patterning to the demand of ashing.Anticipate the organosilicon polymer with basic structure, can be effective as the NSP material, this basic structure is similar to the oxide compound that comprises this organosilicon polymer or the basic structure of composition.
General organosilicon polymer carries out terminal hydroxyl (the slow self-condensation OH).This self-condensation makes the package stability deterioration of polymkeric substance.Especially, during developing, it is a most crucial steps in the node separating technology, and in each developing process, the dissolution rate of NSP material (DR) must be kept constant.The self-condensation of the hydroxyl of organosilicon polymer causes the molecular weight of poly-silicon-oxygen polymer to increase gradually, and slows down the dissolution rate of organosilicon polymer.
Summary of the invention
Technical problem
Purpose of the present invention is for providing a kind of node isolating polymer (NSP), and its dissolution rate and molecular weight are kept constant substantially at lay up period, and it is dissolved in the alkaline development solution with needed speed.
Another object of the present invention is for providing a kind of inner closely spaced composition of filling semiconductor device that is used for, and it comprises the node isolating polymer to reach good storage stability, therefore is applicable to the manufacturing of semiconductor capacitor.
Technical solution
According to an aspect of the present invention, a kind of inner closely spaced compound of filling semiconductor device (also abbreviating " compound of filling the gap " as) that is used for is provided, wherein the compound in this filling gap comprises: (a) in the presence of acid catalyst, utilize the prepared hydrolysate of hydrolysis of the compound of formula 1,2 and 3 representatives:
[RO]
3Si-[CH
2]
nR’(1)
Wherein n is 0 to 10, and reaching R and R ' is hydrogen atom, C independently
1-C
12Alkyl or C
6-C
20Aryl;
HOOC[CH
2]
nR
2Si-O-SiR’
2[CH
2]
nCOOH (2)
Wherein n is 0 to 10, and reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl; And
R
3Si-O-X (3)
Wherein X is R ' or SiR '
3, reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl, perhaps (b) utilizes the prepared polycondensate of polycondensation of hydrolysate.
According to a further aspect in the invention, provide a kind of inner closely spaced composition of filling semiconductor device (also abbreviating " composition of filling the gap " as) that is used for, it comprises the compound and the organic solvent in this filling gap.
The composition of filling the gap can further comprise the mixture of linking agent or itself and acid catalyst.
The composition in this filling gap can further comprise stablizer, tensio-active agent or its mixture.
Favourable effect
The compound in filling of the present invention gap is dissolved in the alkaline development solution with needed speed, and at lay up period, does not have under any remarkable change at dissolution rate and molecular weight, is high stability.
Embodiment
The invention provides a kind of inner closely spaced compound of filling semiconductor device that is used for, wherein this compound comprises: (a) in the presence of acid catalyst, utilize the prepared hydrolysate of hydrolysis of the compound of formula 1,2 and 3 representatives:
[RO]
3Si-[CH
2]
nR’(1)
Wherein n is 0 to 10, and reaching R and R ' is hydrogen atom, C independently
1-C
12Alkyl or C
6-C
20Aryl;
HOOC[CH
2]
nR
2Si-O-SiR’
2[CH
2]
nCOOH (2)
Wherein n is 0 to 10, and reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl; And
R
3Si-O-X (3)
Wherein X is R ' or SiR '
3, reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl, perhaps (b) utilizes the prepared polycondensate of polycondensation of hydrolysate.
The compound of formula 1 facilitates the main chain of the compound of filling the gap to form.The compound of formula 1 is hydrolyzed in containing the solution of acid catalyst, and to form hydrolysate, it follows condensation to obtain polycondensate.
The compound of formula 2 is used for carboxyl is introduced the end of polycondensate, and it is by in the presence of acid catalyst, and the reaction of the compound of formula 1 obtains.The terminal carboxyl(group) of polycondensate is applicable to keeps the solubleness of polycondensate in the developing solution of fixed concentration, and even prevents the self-condensation of polycondensate at lay up period.Therefore, the compound in filling of the present invention gap is different from the polymkeric substance in traditional filling gap, can solve the instable problem of storing.
The compound of formula 3 is applicable to available from the terminal hydroxyl end-blocking of the polycondensate of the compound of formula 1.This end-blocking effect has prevented the self-condensation of polycondensate.
The end group of polycondensate can be protected by the part by weight between the compound of change formula 2 and formula 3, with the dissolution rate of control polycondensate to needed degree.
Especially, the compound of filling the gap is by formula 1 compound that mixes 40 to 95 weight parts, formula 2 compounds of 0.1 to 30 weight part, and formula 3 compounds of 0.1 to 30 weight part; In the presence of the acid catalyst of 0.001 to 5 weight part, in the solvent of 5 to 900 weight parts, this mixture of hydrolysis; And prepare by this hydrolysate of polycondensation alternatively.The compound of filling the gap can be the mixture of hydrolysate and polycondensate.
The usage quantity of formula 2 compounds is less than 0.1 weight part, significantly reduced the solubleness of compound in developing solution of filling the gap, it can't satisfy the needed dissolution rate of the compound of filling the gap, and makes the compound of filling the gap be insoluble in the developing solution.On the other hand, the usage quantity of formula 2 compounds sharply increases the dissolution rate of the compound of filling the gap greater than 30 weight parts, increases the dissolution rate of the compound of filling the gap apace, and increases follow-up spin coating step to form the defective number in the film on wafer.
If the usage quantity of formula 3 compounds is less than 0.1 weight part, carry out self-condensation available from polycondensate in formula 1 compound, it reduces the dissolution rate of compound in developing solution of filling the gap, is insoluble to developing solution so that fill the compound in gap at lay up period.On the other hand, if the usage quantity of formula 3 compounds is greater than 30 weight parts, it can remain unreacted state, and it causes the significantly difference of the thickness of the film on wafer to be formed in follow-up spin coating step.
Any acid catalyst can be used in hydrolysis and polycondensation under no any concrete restriction, its specific examples comprises nitric acid, sulfuric acid, tosic acid monohydrate, ethyl sulfate, 2,4,4,6-tetrabromo cyclohexadiene ketone, st-yrax tosylate, 2-oil of mirbane methyl tosylate, and the alkyl esters of organic sulfonic acid.
Hydrolysis or condensation reaction can suitably be controlled by the kind, amount and the addition manner that change acid catalyst.
The polycondensate of the hydrolysate of formula 1,2 and 3 compounds preferably has 1,000 to 30,000 weight-average molecular weight.Because fill backlash characteristics, preferred polycondensate has 1,000 to 10,000 weight-average molecular weight.
Polycondensate can be the polymkeric substance of the repeating unit with formula 4 representatives:
[R’[CH
2]
nSiO
1.5](-OH)
a(-OR”)
b (4)
R wherein " be SiR
3Or SiR '
2[CH
2]
nCOOH, R and R ' are hydrogen atom, C independently
1-C
12Alkyl, or C
6-C
20Aryl, n are 0 to 10 integer, and a and b representative be bonded to respectively Si-OH and-OR " ratio of group, meet 0＜a＜1,0＜b＜1, and the relational expression of a+b=1.
The terminal hydroxyl of formula 4 polycondensates (some the utilization-OR OH) " basic end-blocking.This end-blocking effect helps the package stability of polycondensate.
The present invention also provides the closely spaced composition that is used for filling semiconductor device inside.Especially, said composition is included in acid catalyst and has following hydrolysate by formula 1,2 and 3 compound, or the polycondensate of this hydrolysate, and organic solvent.
Wherein the amount of this hydrolysate or this polycondensate based on the gross weight of composition, is preferably 1 to 50 weight part, reaches 1 to 30 weight part more preferably.
This solvent can be the mixture of single solvent or different solutions.When using the mixture of different solvents, at least a solvent of this mixture is a high boiling solvent.Performance prevented the formation of hole and the effect of dry film to be formed when high boiling solvent used composition under low rate, therefore reached to have the film that improves Flatness.High boiling solvent means and is being lower than coating, drying and is solidifying the solvent that evaporates under the temperature required temperature of composition of the present invention.
Being suitable for solvent of the present invention comprises, but be not limited to diethylene glycol monomethyl ether, diethylene glycol diethyl ether, 3-ethoxyl ethyl propionate, 3-methoxypropionic acid methyl esters, cyclopentanone, pimelinketone, propylene glycol methyl ether acetate, Propylene Glycol Dimethyl Ether acetic ester, 1-methoxyl group-2-propyl alcohol, ethyl lactate, cyclopentanone, and acetate hydroxyl ethyl ester.
Baking can cause the self-crosslinking of the compound of filling the gap, with curing composition.This self-crosslinking is allowed when not using extra linking agent, by toasting to solidify said composition.Yet, when adding linking agent extraly, can expect the crosslinked further improvement of said composition.
The limiting examples of linking agent comprises the linking agent based on trimeric cyanamide, the linking agent based on urea that is substituted, the polymkeric substance that contains epoxy group(ing) and derivative thereof.Preferably, based on the compound in the filling gap of 100 weight parts, the amount of linking agent is 0.1 to 30 weight part.
Composition of the present invention further comprises crosslinked acid catalyst, to activate this linking agent.
The example that is fit to be used in crosslinked acid catalyst of the present invention comprises, but is not restricted to mineral acid, sulfonic acid, oxalic acid, maleic acid, cyclohexylamino sulfonic acid (hexamic), cyclohexyl sulfonic acid, and (neighbour) phthalic acid.
Preferably, based on the compound in the filling gap of 100 weight parts, the amount of crosslinked acid catalyst is 0.01 to 10 weight part.
Stablizer can be added into the composition in filling of the present invention gap, so as the natural curing of the crosslinked generation of reason or because of use that linking agent produces crosslinked during, prevent to damage the possibility of the package stability of composition.
Stablizer can be the organic or inorganic acid anhydrides.Based on the compound in the filling gap of 100 weight parts, the amount of stablizer can be 0.01 to 10 weight part.
Tensio-active agent can be added into dispersiveness, the coating thickness homogeneity of composition of the present invention to improve composition, and fills backlash characteristics.Being fit to be used in tensio-active agent of the present invention comprises: (i) nonionic surfactant, Voranol EP 2001 class for example, for example polyoxyethylene lauryl ether, polyoxyethylene stearyl base ether, polyoxyethylene cetyl base ether, and polyoxyethylene oleyl ether; Polyoxyethylene alkylaryl ether class, for example polyoxyethylene phenolic ether in the ninth of the ten Heavenly Stems; Polyoxyethylene polyoxypropylene block copolymer; And polyoxyethylene sorbitol fatty acid ester, for example sorbityl monododecanoate, Sorbitol Powder monopalmitate, Sorbitol Powder monostearate, sorbitol monooleate, polyoxyethylene sorbitol monostearate, polyoxyethylene sorbitol trioleate, and polyoxyethylene sorbitol tristearate; (ii) fluorizated tensio-active agent, for example EFTOP EF301, EF303 and EF352 are (commercially available from Tochem Products Co., Ltd.); MEGAFAC F171 and F173 (commercially available) from DainipponInk and Chemicals Inc.; FLUORAD FC430 and FC431 (commercially available) from Sumitomo3M Ltd., and ASAHI GUARD AG710, SURFLON S-382, SC101, SC102, SC103, SC104, SC105 and SC106 are (commercially available from Asahi Glass Co., Ltd.); And (iii) based on the tensio-active agent of silicon, for example organosiloxane polymer KP341 is (commercially available from Shinetsu Chemical Co., Ltd.).These tensio-active agents can use separately maybe and two or more can be used in combination.Preferably, based on the solids content of 100 weight part compositions, the addition of tensio-active agent is 0.001 to 5 weight part.
The present invention also provides the composition that uses this filling gap to make the method for semiconductor capacitor.Especially, this method comprises following step: form oxide compound mould (mold) (oxide compound that promptly is used for patterning) to form the hole of patterning on semiconductor substrate; Electrode materials is deposited on the oxide compound mould; In depositing this patterning hole of this electrode materials, fill the composition in this filling gap; Utilize developing solution that the structure of gained is developed and be coated in the said composition at the top of this electrode material layer with removal, then, baking; The top that (etch back) removes this electrode material layer is eat-back in utilization; Simultaneously, utilize Wet-type etching to remove this oxide compound mould and be filled in residual composition in this patterning hole, to form lower electrode.
Any wet etchant can be used in the method for the present invention, as long as it can while dissolved oxygen thing and composition.Preferably use hydrofluoric acid solution to be wet etchant, and Ti/TiN can be used as electrode materials.
On lower electrode, form dielectric layer, and on this dielectric layer, form upper electrode, to finish the manufacturing of semiconductor capacitor.
The working of an invention mode
Hereinafter, the present invention will explain in more detail with reference to following embodiment.Yet, the purpose that these embodiment only Gong illustrate, and non-being construed to limits the scope of the invention.
Embodiment
[embodiment 1]
In being equipped with 3 liters four neck flasks of mechanical stirrer, condenser, dropping funnel and nitrogen inlet tube, with 1 of the methyltrimethoxy silane of 661g, 119g, two (the 3-carboxylic propyl group) tetramethyl disiloxanes of 3-, and the methoxytrimethylsilane of 69g be dissolved in 1, in the propylene glycol methyl ether acetate of 820g (PGMEA), then to the aqueous nitric acid that wherein adds 206g (1,000ppm).Next, allow that mixture reacted 1 hour down at 50 ℃.Under reduced pressure from reaction mixture, remove methyl alcohol.In 1 week of sustained reaction, keeping temperature of reaction simultaneously is 60 ℃, produce polydispersity (PD) and be 2 and weight-average molecular weight (Mw) be 3,200 polymkeric substance (" polymer A ").Follow abundant stirring, utilize the polymer A of the propylene glycol methyl ether acetate dilution 10g of 100g, and to the tensio-active agent that wherein adds 0.1g (Zonyl FSO-100, DuPont), with the composition in the filling gap of preparation solution form.This solution of a part is spin-coated on the Silicon Wafer, and toasts 50 seconds down to form thickness at 90 ℃
Film.Under 23 ℃, will be immersed in TMAH (2.38wt%) aqueous solution through the wafer of coating after, utilize dissolution rate (DR) tester (RDA-760, LTJ, Japan) to measure film and dissolve the required time (being out-of-service time (BTT)) fully.The remainder of solvent at room temperature is stored in the air-tight bottle.
[embodiment 2]
Repeat the step of embodiment 1, but use the propyl trimethoxy silicane of 130g to replace methyltrimethoxy silane.
[embodiment 3]
Repeat the step of embodiment 1, but use the hexamethyldisiloxane of 58g to replace methoxytrimethylsilane.
[embodiment 4]
Repeat the step of embodiment 1, but use 1, the pimelinketone of 820g replaces propylene glycol methyl ether acetate (PGMEA).
[comparative example 1]
Repeat the step of embodiment 1, but do not use 1, two (the 3-carboxylic propyl group) tetramethyl disiloxanes of 3-.
[comparative example 2]
Repeat the step of embodiment 1, but do not use methoxytrimethylsilane.
[comparative example 3]
Repeat the step of embodiment 1, but do not use 1, two (3-carboxylic propyl group) tetramethyl disiloxane and the methoxytrimethylsilanes of 3-.
According to following method, the package stability (out-of-service time (BTT) and change of molecular weight) of the composition in the filling gap for preparing among test implementation example 1-4 and the comparative example 1-3.
Composition was at room temperature stored 15 days each (respective) 6 of spin coating under the same conditions " Silicon Wafer, and 90 ℃ of bakings 50 seconds.Test the BTT of these films.Measure these compounds of filling gaps before storing and after BTT value and molecular weight.The results are shown in 1.
Table 1
Table 2
Result by table 1 can find out, the film that forms among the embodiment 1-4 is dissolved in the alkaline development solution, in the limit of error of test set, can keeps these to fill the dissolution rate and the molecular weight of the compound in gap, do not have any significant variation, expression has good storage stability.
On the contrary, the result by table 2 can find out obviously that the BTT value of the film that forms among the comparative example 1-3 in developing solution at room temperature store sharply increase afterwards in 15 days, and these molecular weight of filling the compound in gaps increases significantly at lay up period.
Claims (15)
1. one kind is used for the inner closely spaced compound of filling semiconductor device, and wherein said compound comprises:
(a) in the presence of acid catalyst, the prepared hydrolysate of hydrolysis of the compound of through type 1,2 and 3 representatives:
[RO]
3Si-[CH
2]
nR’ (1)
Wherein n is 0 to 10, and reaching R and R ' is hydrogen atom, C independently
1-C
12Alkyl or C
6-C
20Aryl;
HOOC[CH
2]
nR
2Si-O-SiR’
2[CH
2]
nCOOH (2)
Wherein n is 0 to 10, and reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl; And
R
3Si-O-X (3)
Wherein X is R ' or SiR '
3, reaching R and R ' is C independently
1-C
12Alkyl or C
6-C
20Aryl, perhaps
(b) utilize the prepared polycondensate of polycondensation of described hydrolysate.
2. compound according to claim 1, the weight-average molecular weight of wherein said polycondensate are 1,000 to 30,000.
3. compound according to claim 1, wherein said polycondensate are the polymkeric substance with repeating unit of formula 4 representatives:
[R’[CH
2]
nSiO
1.5](-OH)
a(-OR”)
b (4)
R wherein " be SiR
3Or SiR '
2[CH
2]
nCOOH, R and R ' are hydrogen atom, C independently
1-C
12Alkyl, or C
6-C
20Aryl, n are 0 to 10 integer, and a and b representative be bonded to respectively Si-OH and-OR " ratio of group, meet the relational expression of 0＜a＜1,0＜b＜1 and a+b=1.
4. one kind is used for the inner closely spaced composition of filling semiconductor device, comprises compound according to claim 1 and organic solvent.
5. composition according to claim 4 further comprises linking agent or itself and cross-linked acid mixture of catalysts.
6. composition according to claim 5, wherein said linking agent are selected from the melamine class linking agent, the ureas linking agent that is substituted, the polymkeric substance that contains epoxy group(ing), and the group formed of their derivative.
7. composition according to claim 5, the amount of wherein said linking agent are 0.1 to 30 weight part based on the described compound of 100 weight parts.
8. composition according to claim 5, wherein said cross-linked acid catalyzer is selected from mineral acid, sulfonic acid, oxalic acid, maleic acid, hexanaphthene amidosulfonic acid, cyclohexyl sulfonic acid, phthalic acid, and the group formed of their mixture.
9. composition according to claim 5, the amount of wherein said cross-linked acid catalyzer are 0.01 to 10 weight part based on the described compound of 100 weight parts.
10. according to claim 4 or 5 described compositions, further comprise stablizer, tensio-active agent or their mixture.
11. composition according to claim 10, wherein said stablizer are selected from the group that organic acid anhydride, inorganic acid anhydrides and their mixture are formed.
12. composition according to claim 10, the amount of wherein said stablizer are 0.01 to 10 weight part based on the described compound of 100 weight parts.
13. composition according to claim 4, wherein said organic solvent is selected from diethylene glycol monomethyl ether, diethylene glycol diethyl ether, 3-ethoxyl ethyl propionate, 3-methoxypropionic acid methyl esters, cyclopentanone, pimelinketone, propylene glycol methyl ether acetate, Propylene Glycol Dimethyl Ether acetic ester, 1-methoxyl group-2-propyl alcohol, ethyl lactate, cyclopentanone, acetate hydroxyl ethyl ester, and the group formed of their mixture.
14. composition according to claim 4, the amount of wherein said organic solvent are 100 to 3,000 weight parts based on the described compound of 100 weight parts.
15. a method that is used to make semiconductor capacitor comprises following step:
On semiconductor substrate, form the oxide compound mould, be used for the oxide compound of patterning, to form the hole of patterning;
Deposition of electrode material on described oxide compound mould;
In depositing the described patterning hole of described electrode materials, fill according to each described composition in the claim 4 to 14;
Utilize developing solution that the structure of gained is developed, be coated in the described composition at the top of described electrode material layer with removal, then, baking;
The top of removing described electrode material layer is eat-back in utilization; And
Simultaneously, utilize Wet-type etching to remove described oxide compound mould and be filled in remaining composition in the hole of described patterning, to form lower electrode.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0086383 | 2008-09-02 | ||
| KR20080086383 | 2008-09-02 | ||
| PCT/KR2008/007839 WO2010027128A1 (en) | 2008-09-02 | 2008-12-31 | Compound for filling small gaps in semiconductor device, composition comprising the compound and process for fabricating semiconductor capacitor |
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|---|---|
| CN102143990A true CN102143990A (en) | 2011-08-03 |
| CN102143990B CN102143990B (en) | 2014-04-02 |
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| Country | Link |
|---|---|
| US (1) | US8188576B2 (en) |
| KR (1) | KR101233385B1 (en) |
| CN (1) | CN102143990B (en) |
| TW (1) | TWI406882B (en) |
| WO (1) | WO2010027128A1 (en) |
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| CN105315679A (en) * | 2014-05-26 | 2016-02-10 | 三星Sdi株式会社 | Composition for forming silica based layer, and method for manufacturing silica based layer |
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| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
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| US5840821A (en) * | 1994-03-11 | 1998-11-24 | Kawasaki Steel Corporation | Coating solution and method for preparing the coating solution, method for forming insulating films for semiconductor devices, and method for evaluating the coating solution |
| US6410151B1 (en) * | 1999-09-29 | 2002-06-25 | Jsr Corporation | Composition for film formation, method of film formation, and insulating film |
| JP2001183833A (en) * | 1999-12-27 | 2001-07-06 | Sumitomo Chem Co Ltd | Resist composition |
| JP3631236B2 (en) * | 2002-07-12 | 2005-03-23 | 東京応化工業株式会社 | Method for producing silica-based organic coating |
| CN100570483C (en) * | 2003-02-21 | 2009-12-16 | 日产化学工业株式会社 | Contain the composition of the photoetching of acrylic polymers with the formation sealant |
| US7553769B2 (en) * | 2003-10-10 | 2009-06-30 | Tokyo Electron Limited | Method for treating a dielectric film |
| KR100574490B1 (en) * | 2004-04-27 | 2006-04-27 | 주식회사 하이닉스반도체 | Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same |
| US8039049B2 (en) * | 2005-09-30 | 2011-10-18 | Tokyo Electron Limited | Treatment of low dielectric constant films using a batch processing system |
| KR100722984B1 (en) * | 2005-12-05 | 2007-05-30 | 제일모직주식회사 | Polymer for gap-filling of semiconductor device and coating compositions using thereof |
| KR101044132B1 (en) * | 2005-12-08 | 2011-06-24 | 히다치 가세고교 가부시끼가이샤 | Liquid resin composition for electronic element and electronic element device |
| KR100955570B1 (en) * | 2006-09-18 | 2010-04-30 | 주식회사 엘지화학 | At low temperature, fast hardening composition for preparing protecting film prepared therefrom, and substrate comprising the same |
| WO2008136567A1 (en) * | 2007-05-04 | 2008-11-13 | Cheil Industries Inc. | Compound for gap-filling of semiconductor device and coating composition using the same |
-
2008
- 2008-12-31 WO PCT/KR2008/007839 patent/WO2010027128A1/en active Application Filing
- 2008-12-31 KR KR1020117003554A patent/KR101233385B1/en active IP Right Grant
- 2008-12-31 CN CN200880130954.7A patent/CN102143990B/en not_active Expired - Fee Related
-
2009
- 2009-09-01 TW TW98129394A patent/TWI406882B/en not_active IP Right Cessation
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2011
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105315679A (en) * | 2014-05-26 | 2016-02-10 | 三星Sdi株式会社 | Composition for forming silica based layer, and method for manufacturing silica based layer |
| US9902873B2 (en) | 2014-05-26 | 2018-02-27 | Samsung Sdi Co., Ltd. | Composition for forming silica based layer, and method for manufacturing silica based layer |
| CN105315679B (en) * | 2014-05-26 | 2019-09-17 | 三星Sdi株式会社 | The method for forming the constituent of silica-based layer and manufacturing silica-based layer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201016752A (en) | 2010-05-01 |
| US8188576B2 (en) | 2012-05-29 |
| CN102143990B (en) | 2014-04-02 |
| KR20110079609A (en) | 2011-07-07 |
| KR101233385B1 (en) | 2013-02-15 |
| TWI406882B (en) | 2013-09-01 |
| WO2010027128A8 (en) | 2011-05-19 |
| US20110151640A1 (en) | 2011-06-23 |
| WO2010027128A1 (en) | 2010-03-11 |
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