CN102129492B - Method for simulating device related noises in integrated circuit - Google Patents

Method for simulating device related noises in integrated circuit Download PDF

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CN102129492B
CN102129492B CN 201110049106 CN201110049106A CN102129492B CN 102129492 B CN102129492 B CN 102129492B CN 201110049106 CN201110049106 CN 201110049106 CN 201110049106 A CN201110049106 A CN 201110049106A CN 102129492 B CN102129492 B CN 102129492B
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尚也淳
肖冰峻
吴大可
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Beijing Empyrean Technology Co Ltd
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Beijing CEC Huada Electronic Design Co Ltd
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Abstract

The invention provides a noise analysis method for high-frequency circuit simulation. In the method, the influence of device noise source correlation on output noises under the condition of high frequency is taken into account. In the method, based on conventional noise analysis in which only an independent noise source is taken into account, a transmission function for the coupling of related noise sources is calculated to obtain a noise analysis result in the coupling of each related noise source, and the result is added into final output noise power spectrum density. The noise analysis method in which the noise source correlation is taken into account is an improvement in the conventional circuit noise analysis, and an additional related noise source sub-circuit model is not required to be established, so conciseness and short simulation time are ensured.

Description

The emulation mode of device related noises in integrated circuit
1. technical field
The invention belongs to EDA (electric design automation) field, special, relate to a kind of in integrated circuit simulating, about the emulation mode of device related noises and noise coupling.
2. background technology
Noise source in the integrated circuit mainly contains thermonoise and flicker noise, the low frequency characteristic of flicker noise major effect circuit wherein, and in the high frequency field, the impact of thermonoise is the most remarkable.For Mosfet, when being operated in GHz when above, the fluctuation of random gesture also can induce noise current at grid by gate oxide electric capacity in the raceway groove that is caused by thermonoise, because gate-induced noise has identical mechanism of production with channel noise, so is correlated with between them.The existing proof of measuring, in RF band, except thermonoise, the coupling between gate-induced noise and it and the channel noise is more and more significant.
Traditional circuit emulator all is to carry out first OP to calculate when carrying out noise analysis, obtains quiescent point, finds the solution the transition function H of noise source i when quiescent point again i(j ω).
(G+jωC)H i(jω)=b i
The electricity of circuit was led and capacitance matrix when wherein G and C were quiescent point respectively, b iBe the vector of expression noise source i annexation in circuit, ω is angular frequency.If have n independent noise source in the circuit, so for certain specifies the noise power spectral density (PSD) of output x just to be in the circuit:
S x ( ω ) = Σ i = 1 n | H ix ( jω ) | 2 S i ( ω )
H wherein Ix(j ω) is that noise source i is to the transition function of x, S i(ω) be the power spectrum density of noise i.By following formula as can be known, current traditional circuit emulator only relates to independently noise source for the calculating of noise, does not comprise the coupling between the correlation noise.
But device noise model and circuit noise analysis are absolutely necessary for the RF circuit design accurately, and this can help circuit designers to optimize the RF circuit performance and reduce design time.In order to adapt to the requirement of RF circuit design, in current Mosfet industrial standard Model B sim4, comprised (holistic) noise model of a kind of integral body, it can carry out a general consideration to the Mosfet gate-induced noise.But from essence, this model still adopts is emulation mode for independent noise source, only the mode of the impact of gate-induced noise with independent noise source represented out, therefore in noise analysis, can not consider the coupling unit between the correlation noise.
Colin McAndrew has proposed a kind of model of the correlation noise of realizing with Verilog-A, and this model can be used for current traditional circuit emulator.The model of this correlation noise can be introduced the coupling unit between them in the result of noise analysis.The essence of this model is two noise source n 1, n 2Relevant portion with one independently noise source represent:
n 1 = S n 1 ( 1 - c 2 ) · n 10 + S n 1 c 2 · n c
Figure BSA00000442056000013
Wherein, n 10, n 20And n cRespectively that power spectrum density is 1 independent noise source, χ r+ j χ iVector of unit length, c ∈ [0,1].n 1And n 2Related coefficient be:
c n1n2=(χ r+jχ i)c 2
Correlation noise n so 1And n 2Power spectrum density just be respectively S N1, S N2Here, the real part χ of noise correlation coefficients rWith imaginary part χ iCan realize by resistance and the electric capacity in Veriliog-A noise electronic circuit, introduced.
In the Mosfet of current issue PSP model and EKV3 model, noise model wherein is the correlativity of having considered in this way between channel noise and the gate-induced noise respectively just.
But up to the present, the model of this consideration noise source correlativity is all realized by Verilog-A, if adopt traditional model to calculate the correlativity of noise source and the coupling between them is analyzed, and also all there is defective in current emulator.In addition, this Mosfet correlation noise model of realizing with Verilog-A, two extra noise source electronic circuits have been introduced in the inside, like this when doing circuit simulation, each Mosfet can cause the increase of two extra electricity equations, thereby cause the increase of circuit solution matrix, so that the simulation time of circuit increases.
3. summary of the invention
The object of the invention is to provides a kind of comprehensive for the custom circuit emulator, succinct, do not rely on the noise analysis approach of Verilog-A model, this method not only is applicable to the independent noise source in the device, and can also process the correlation noise source in the device, and the coupling between them is analyzed.
Technical scheme of the present invention is:
On traditional circuit noise analysis foundation that is directed to independent noise source, carry out the coupling analysis of correlation noise, final output noise power spectral density S x(ω) consisted of by two parts, that is:
S x(ω)=S x0(ω)+S xr(ω)
S wherein X0(ω) be the various noise sources of device all as the noise analysis result of independent source, S Xr(ω) be the coupling unit in each correlation noise source.
At above-mentioned final output noise power spectral density S xIn the computing method (ω), independent noise source is on the calculating of output noise impact, employing be conventional noise analysis approach.
At above-mentioned final output noise power spectral density S xIn the computing method (ω), correlation noise source coupling unit S XrCalculating (ω), the method for employing is:
S xr ( ω ) = Σ i = 1 n Σ j = 1 n [ Re ( H ijx ( jω ) ) Re ( c ij ) + Im ( H ijx ( jω ) ) Im ( c ij ) ] S i ( ω ) S j ( ω ) , ( i ≠ j ) .
Wherein, H Ijx(j ω) is the transition function of noise source i and noise source j coupling, c IjIt is the related coefficient of noise source i and noise source j.
At above-mentioned correlation noise source coupling unit S XrIn the computing method (ω), correlation noise source coupled transfer function H IjxThe calculating of (j ω), the method for employing is:
H ijx ( jω ) = H ix ( jω ) ‾ H jx ( jω ) .
At above-mentioned correlation noise source coupled transfer function H IjxIn the computing method of (j ω), noise source transition function H Ix(j ω), H JxThe calculating of (j ω), employing be conventional noise source transition function computing method.
At above-mentioned correlation noise source coupling unit S XrIn the computing method (ω), the correlation factor c in correlation noise source IjNot only real number can be got, and the plural number of having considered that phase place changes can be got.
At above-mentioned correlation noise source coupling unit S XrIn the computing method (ω), the related coefficient c in correlation noise source IjAnd c JiBetween have a following relation:
c ji = c ij ‾ .
Considered the noise analysis approach of noise source correlativity more than in circuit emulator, introducing, the factor that noise analysis is considered more comprehensively, the result of emulation is more reasonable, thereby so that circuit simulation has satisfied the requirement of RF circuit design to noise analysis, so that circuit emulator can not only be applied to the low-frequency channel design, can also be applied to the high frequency field.This noise analysis approach of considering the noise source correlativity, it is a kind of improvement to current traditional circuit emulator noise analysis approach, it does not have to set up relevant Model of Noise Source, does not need induce one extra electronic circuit and circuit node, therefore can not increase the circuit simulation time.
4. description of drawings
Fig. 1 is the Mosfet PSP model equivalent circuit diagram with noise source
Fig. 2 is the flow process of general circuit emulator noise analysis
Fig. 3 is the noise analysis flow process of having considered the noise source correlativity
Fig. 4 is Verilog-A correlation noise model and Aeolus about the analysis result of noise coupling relatively
Fig. 5 is Verilog-A correlation noise model and Aeolus noise analysis result's comparison
5. embodiment
When integrated circuit was worked under high frequency, the noise source effect meeting that some induce was more and more significant, and they are serving as independently noise source on the one hand, on the other hand again can and other correlation noise source between be coupled.As shown in Figure 1, Fig. 1 is the equivalent circuit diagram of the N-shaped Mosfet PSP model of a positively biased.D, G, S, B are the outside ports of Mosfet, GP, DI, SI, BP are the internal nodes of model, and Rd and Rs are respectively the dead resistances of drain terminal and source, and Rg is the grid dead resistances.Rb, Rjs, Rjd, Rw have consisted of the substrate networks of model, and Djd and Djs are two parasitic joint diodes.Dotted line frame among the figure has consisted of the intrinsic part of Mosfet.Sid is channel noise, and Sig is the grid noise source that is induced by channel noise.Other thermonoises in the PSP model, Flicker noise and shot noise (Shot noise) etc. because belonging to independent noise source, are not here just listed one by one.Noise analysis is exactly will calculate these noise sources to the impact of circuit output.
In general, the noise analysis of circuit is from OP analyzes (201), and as shown in Figure 2, Fig. 2 is the process flow diagram of custom circuit emulator noise analysis.By solution matrix and iteration, obtain the quiescent point (202) of circuit, then just can carry out small-signal analysis.According to set noise analysis condition in the net table, obtain first frequency values (203) of noise analysis, according to the frequency range of set noise analysis in the net table, check whether current noise analysis finishes (204) again.If obtained frequency values has exceeded the noise analysis scope of regulation, noise analysis finishes (205) so.If noise analysis is not finished, that will be according to each noise source of quiescent point information calculations of current frequency of operation and circuit separately to the transition function H of output point Ix(j ω) (206) enter the output noise process of finding the solution with that.Because think all that generally each noise source is independently, the noise analysis of circuit is exactly the noise analysis (207) about independent noise source so, supposes to exist n independently noise source, so:
S x 0 ( ω ) = Σ i = 1 n | H ix ( jω ) | 2 S i ( ω )
Then the power spectrum density of output noise is exactly S X0(ω) (208).The noise analysis of circuit under certain frequency of operation just finished like this, then according to the setting in the net table, obtains next frequency of operation (209), thereby can carry out the noise analysis of next round.
Fig. 2 is the noise analysis process of not considering the noise source MD.The correlation noise source mainly is in the coupling that is embodied in each other on the impact of circuit, and purpose of the present invention will also count the coupling between each correlation noise source among the noise analysis result of circuit, thereby improves the accuracy of noise analysis.The present invention improves the process of conventional noise analysis, and as shown in Figure 3, Fig. 3 is a new process of finding the solution output noise of considering the coupling effect of correlation noise source.At first all assign each noise source as independent source, then carry out the noise analysis of independent source, find the solution S X0(ω) (207), that this step obtains is the result of conventional noise analysis.To calculate with that the coupling between each correlation noise source, find the solution the transition function H of correlation noise source coupling Ijx(j ω) (301):
H ijx ( jω ) = H ix ( jω ) ‾ H jx ( jω )
So just can obtain the coupling unit S between each correlation noise source Xr(ω) (302):
S xr ( ω ) = Σ i = 1 n Σ j = 1 n [ Re ( H ijx ( jω ) ) Re ( c ij ) + Im ( H ijx ( jω ) ) Im ( c ij ) ] S i ( ω ) S j ( ω ) , ( i ≠ j )
So final output noise power spectral density is exactly S X0(ω)+S Xr(ω) (303).
The present invention realizes in circuit emulator Aeolus at present about considering the noise analysis approach that the correlation noise source is coupled.Fig. 4 is Verilog-A correlation noise model and the Aeolus that uses respectively PSP, noise analysis result to correlation noise source Sid and Sig coupling unit in the Mosfet amplifier, frequency is from KHz to THz, covered the gamut from the low frequency to RF, solid line is the simulation result of Aeolus among the figure, and square frame is the result with Verilog-A correlation noise model emulation.As seen from Figure 4, the simulation result of Aeolus and in full accord with the simulation result of Verilog-A correlation noise source model.
Fig. 5 is the output noise of using respectively the Mosfet amplifier of the Verilog-A correlation noise model of PSP and the emulation of Aeolus institute, and solid line is the simulation result of Aeolus among the figure, and square frame is the result with Verilog-A correlation noise model emulation.Solid line is the simulation result of Aeolus among the figure, and square frame is the result with Verilog-A correlation noise model emulation.The simulation result of Fig. 5 surface A eolus and in full accord with the simulation result of Verilog-A correlation noise source model.
By relatively can finding out of Fig. 4 and Fig. 5, the noise analysis approach of consideration noise source correlativity proposed by the invention and the correlation noise source model of Verilog-A are as broad as long at analysis result.But method of the present invention is more succinct, does not need with just can be so that the custom circuit emulator carries out accurate analysis to the circuit output noise under the high frequency situations by other correlation noise source Verilog-A model.

Claims (5)

1. the comprehensive noise analysis approach based on the custom circuit emulator is characterized in that final output noise power spectral density S x(ω) consisted of by two parts, that is: S x(ω)=S X0(ω)+S Xr(ω), S X0That independent noise source is on the impact of output noise, S (ω) X0Calculating (ω), employing be conventional noise analysis approach, S Xr(ω) be the coupling unit in each correlation noise source, S XrCalculating (ω), the method for employing is:
S xr ( ω ) = Σ i = 1 n Σ j = 1 , j ≠ 1 n [ Re ( H ijx ( jω ) ) Re ( c ij ) + Im ( H ijx ( jω ) ) Im ( c ij ) ] S i ( ω ) S j ( ω )
Wherein: H Ijx(j ω) is the transition function of noise source i and noise source j coupling, c IjThe related coefficient of noise source i and noise source j, S i(ω) and S j(ω) be respectively the power spectrum density of noise source i and noise source j.
2. a kind of comprehensive noise analysis approach based on the custom circuit emulator as claimed in claim 1 is characterized in that correlation noise source coupled transfer function H IjxThe calculating of (j ω), the method for employing is: H wherein Ix(j ω) and H Jx(j ω) is respectively the transition function of noise source i and noise source j.
3. a kind of comprehensive noise analysis approach based on the custom circuit emulator as claimed in claim 2 is characterized in that noise source transition function H Ix(j ω), H JxThe calculating of (j ω), employing be conventional noise source transition function computing method.
4. a kind of comprehensive noise analysis approach based on the custom circuit emulator as claimed in claim 1 is characterized in that the correlation factor c in correlation noise source IjNot only real number can be got, and the plural number of having considered that phase place changes can be got.
5. a kind of comprehensive noise analysis approach based on the custom circuit emulator as claimed in claim 1 is characterized in that the related coefficient c in correlation noise source IjAnd c JiBetween have a following relation:
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CN106777523B (en) * 2016-11-23 2020-08-25 上海华力微电子有限公司 Resistor sub-circuit noise model structure and modeling method thereof
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Citations (4)

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US20060184904A1 (en) * 2005-02-15 2006-08-17 Rajeev Murgai Analyzing substrate noise
CN101482890A (en) * 2008-01-10 2009-07-15 北京芯慧同用微电子技术有限责任公司 Circuit simulation apparatus and method
CN101506810A (en) * 2005-10-24 2009-08-12 克立尔希普技术公司 Timing, noise, and power analysis of integrated circuits
CN101796630A (en) * 2007-09-10 2010-08-04 富士通株式会社 Integrated circuit and noise measuring method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060184904A1 (en) * 2005-02-15 2006-08-17 Rajeev Murgai Analyzing substrate noise
CN101506810A (en) * 2005-10-24 2009-08-12 克立尔希普技术公司 Timing, noise, and power analysis of integrated circuits
CN101796630A (en) * 2007-09-10 2010-08-04 富士通株式会社 Integrated circuit and noise measuring method
CN101482890A (en) * 2008-01-10 2009-07-15 北京芯慧同用微电子技术有限责任公司 Circuit simulation apparatus and method

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