CN102124549B - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN102124549B CN102124549B CN200980132056XA CN200980132056A CN102124549B CN 102124549 B CN102124549 B CN 102124549B CN 200980132056X A CN200980132056X A CN 200980132056XA CN 200980132056 A CN200980132056 A CN 200980132056A CN 102124549 B CN102124549 B CN 102124549B
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Abstract
本发明提供一种半导体装置。半导体元件(53)在上下贯通有截棱锥形状的空洞(73)的基座(71)的上表面设有膜片(72)。在印刷配线基板这样的基板(52)的上表面设有装片用盘(65),半导体元件(53)通过装片树脂(74)将下表面粘接在装片用盘(65)之上。装片用盘(65)将与在半导体元件(53)的空洞(73)的内周面形成的槽部(75)的下端相对的区域除去而形成有开口部(76),装片用盘(65)不与槽部(75)的下端接触。
Description
技术领域
本发明涉及半导体装置。具体地,涉及在基板上安装有具有膜片的传感器芯片等半导体元件的半导体装置。
背景技术
图1是表示现有的半导体装置的构造的概略剖面图。该半导体装置11使用装片树脂16(硅酮树脂)将半导体元件15的下表面粘接在装片用盘13上,该装片用盘13设置在印刷配线基板等基板12上。半导体元件15在基座17的上表面铺设膜片14,膜片14将四角固定在基座17的上表面,为了不阻碍膜片14的位移乃至振动,在基座17上设有上下贯通的空洞18。空洞18在图示的例子中,上半部分为截棱锥形状,下半部分成为倒截棱锥形状,但空洞18的整体也可以成为截棱锥形状或倒截棱锥形状。另外,在印刷基板等基板之上小片接合半导体元件的半导体装置,例如具有专利文献1公开的麦克风。
在这样的半导体装置11的组装工序中,在装片用盘13上涂敷熔融状态的装片树脂16,在装片用盘13之上叠置半导体元件15,然后通过使装片树脂16固化而将半导体元件15固定在基板12上。
但是,在这样将半导体元件15小片接合在基板12上时,熔融状态的装片树脂会被吸引到基座17的上表面。若装片树脂16被吸引,则进入到膜片14与基座17的上表面之间的间隙而固化,装片树脂16使膜片14固着在基座17上,或进入膜片14与基座17的间隙中而成为异物。膜片14固着在基座17上时,膜片14不能够以规定量振动,半导体元件15不能够得到规定的灵敏度。另外,装片树脂16作为异物而夹在膜片14与基座17之间时,半导体元件15的振动特性发生变化。因此,在半导体装置11上产生不良情况,具有半导体装置11的成品率低的问题。
本发明的发明者们对装片树脂16被吸引的现象进行了探讨,发现如下的原因。图2及图3是用于说明该原因的图。图2(a)是半导体装置11的概略俯视图。图2(b)是沿图2(a)的X-X线的放大剖面图,表示从对角方向观察到的半导体装置11的截面。图2(c)是沿图2(a)的Y-Y线的放大剖面图,表示半导体装置11的沿对角方向的截面。图3表示装片树脂16沿空洞18的壁面向上蔓延(這い上がる)的状态。
装片树脂16(硅酮树脂)相对于由Si等半导体材料构成的基座17的浸润性良好,故而如图3所示,在装片树脂16上作用在空洞18的壁面19上传播而要向上蔓延的力F1。特别是,在壁面19与壁面19相交的槽部20,欲使装片树脂16向上蔓延的力从槽部20的两侧的各壁面19作用,并且通过在槽部20形成有细小的间隙而利用毛细管现象也作用将装片树脂16拉起的力。结果,与壁面19相比,在槽部20作用欲使装片树脂16向上蔓延的更大的力F2,装片树脂16在槽部向上蔓延到更高的位置。另外,装片树脂16在壁面向上蔓延的高度(距离)根据(1)对装片树脂作用的表面张力、(2)壁面的浸润难易度、(3)装片树脂的密度而决定。
根据这样的原因,如图2(b)中虚线箭头标记所示,熔融状态的装片树脂16沿槽部20向上蔓延,如图2(c)所示,从槽部20进入膜片14与基座17的间隙中,进而沿膜片14与基座17的间隙而展开。结果,通过装片树脂16将膜片14固着在基座17上,或装片树脂16成为异物而夹在膜片14与基座17的间隙中而产生问题。
装片树脂16在槽部20向上蔓延的高度量根据涂敷后经过的时间和装片树脂16的涂敷量而改变,故而为了不易产生上述那样的问题,考虑减少装片树脂16的涂敷量和缩短涂敷装片树脂16后直至固化的时间。但是,在减少装片树脂16的涂敷量的方法中,由于夹在装片用盘13与半导体元件15之间的装片树脂16的厚度变薄,故而具有不能够充分得到利用装片树脂16缓解从外部对半导体元件15施加的冲击的作用,或者半导体元件15的安装强度降低的不良情况。另外,在将直至使装片树脂16固化的时间缩短的方法中,不能够将多个半导体装置11一起处理,必须少数一点点地将半导体装置11向加热炉转移而使装片树脂16固化,故而具有制造成本变高的不良情况。因此,这些方法不实用。
专利文献1:美国专利第7166910号说明书(第28图)
发明内容
本发明是鉴于上述技术课题而提出的,其目的在于提供一种半导体装置,能够防止装片树脂向设于半导体元件的空洞的槽部传播而沿空洞向上蔓延。
本发明的半导体装置具有:半导体元件,其由水平截面形成多边形的空洞上下贯通基座,将所述空洞覆盖而在所述基座之上配设有膜片;基板,其形成有装片用盘,通过装片树脂将所述半导体元件的下表面粘接在所述装片用盘之上,其中,所述装片用盘以与所述半导体元件的空洞内周面的、壁面与壁面相交而形成的槽部的下端部不接触的方式而形成。
在本发明的半导体装置中,由于不与槽部的下端接触而形成有装片用盘,故而在装片用盘上涂敷熔融状态的装片树脂而使半导体元件的下表面重合在其之上时,即使装片树脂在装片用盘的上表面扩展开来也不会与槽部的下端部接触。因此,能够防止如下的不良情况,即,装片树脂从槽部的下端进入,在槽部传播而在空洞向上蔓延,使膜片固着,或者进入膜片下方的间隙而成为异物。
本发明的半导体装置的一方面,所述基板为印刷基板,所述装片用盘包含所述印刷基板的导体图案而形成,在与所述槽部的下端相对的区域(以下称为槽部相对区域),将所述导体图案除去。在基板为印刷基板时,能够通过在槽部相对区域将其半导体图案除去而在半导体图案上形成开口部,故而能够防止装片树脂沿槽部向上蔓延。
本发明的半导体装置的另一方面,所述导体图案中、所述导体图案除去区域的外周部分的表面至少一部分由Cu、Au等无机材料形成。无机材料,特别是Cu、Au与装片树脂的浸润性不佳,故而若由Cu、Au等无机材料形成导体图案除去区域的外周部分的表面至少一部分,则能够在由无级材料形成的部分阻挡向槽部相对区域流动的装片树脂,可防止装片树脂流入导体图案除去区域而与槽部的下端接触。
本发明的半导体装置的又一方面,所述装片用盘的外周缘位于所述半导体元件的下表面外周缘的外侧。根据该方面,由于装片用盘比半导体元件更向外侧扩展,故而装片用盘与半导体元件下表面之间的装片树脂容易向半导体元件的外侧流动。相应地,向半导体元件内侧流动的装片树脂变少,装片树脂不易与空洞的壁面接触。
本发明的半导体装置的再一方面,所述半导体元件的下表面除了所述槽部下端附近区域之外将整个面粘接在所述装片盘上。根据该方面,由除槽部下端附近区域之外的整个面粘接半导体元件的下表面,故而能够增大半导体元件的粘接面积,可提高半导体元件的粘接强度并可提高基于装片树脂的缓冲效果。
另外,本发明的用于解决上述课题的方式具有将以上说明的构成要素适当组合的特征,本发明能够通过将上述构成要素组合而进行多种变更。
附图说明
图1是现有的半导体装置的概略剖面图;
图2(a)是现有的半导体装置的概略俯视图,图2(b)是沿图2(a)的X-X线的放大剖面图,图2(c)是沿图2(a)的Y-Y线的放大剖面图;
图3是说明装片树脂沿凹槽线向上蔓延的理由的图;
图4是本发明实施方式1的半导体装置的剖面图;
图5是实施方式1的半导体装置所使用的印刷配线基板的俯视图;
图6是本发明实施方式2的半导体装置的局部省略剖面图;
图7是实施方式2的半导体装置所使用的印刷配线基板的俯视图;
图8是实施方式2的变形例的半导体装置的局部省略剖面图;
图9是本发明实施方式3的半导体装置的局部省略剖面图;
图10是实施方式3的半导体装置所使用的印刷配线基板的俯视图;
图11是本发明实施方式4的半导体装置的局部省略剖面图;
图12是实施方式4的半导体装置所使用的印刷配线基板的俯视图。
符号说明
51、81、91、101:半导体装置
52:基板
53:半导体元件
55:基板芯材
56:导体图案
57:抗焊剂
58:无机材料层
59:第一抗焊剂区域
60:内周侧镀敷区域
61:第二抗焊剂区域
62:外周侧镀敷区域
63:第三抗焊剂区域
64:接地电极部
65:装片用盘
71:基座
72:膜片
73:空洞
74:装片树脂
75:槽部
76:开口部
具体实施方式
以下,参照附图说明本发明的优选实施方式。
(第一实施方式)
图4是表示本发明实施方式1的半导体装置51的构造的剖面图,表示基板52的对角方向的截面。图5是用于半导体装置51的基板52的俯视图,将其一部分放大进行表示。在此所示的半导体装置51在基板52的上表面安装半导体元件53,将半导体元件53收纳在由基板52和导电性罩54构成的封装(法拉第罩)内。
基板52由印刷基板构成,如图4所示,在基板芯材55(粘合材料)的大致整个上表面层积有铜箔等导体图案56(金属箔)。在基板芯材55的大致整个下表面也层积有Cu等导体图案69(金属箔),通过对导体图案69进行构图而形成引出电极67和背面侧接地图案68。上表面的导通图案56经由通孔70与下表面的背面侧接地图案68电连接。引出电极67和背面侧接地图案68是用于焊接安装在用于安装半导体装置51的基板(例如手机用的母板)上的图案。
如图5所示,在基板52的中央部形成有由抗焊剂57将导体图案56的表面覆盖的矩形第一抗焊剂区域59。在第一抗焊剂区域59的外侧环状地形成有内周侧镀敷区域60,该内周侧镀敷区域60在导体图案56的表面施加镀敷有Cu、Au等无机材料的无机材料层58。在内周侧镀敷区域60的外侧形成有由抗焊剂57将导体图案56的表面覆盖的环状第二抗焊剂区域61。在第二抗焊剂区域61的外侧环状地形成有外周侧镀敷区域62,该外周侧镀敷区域62在导体图案56的表面施加基于Cu、Au等无机材料的无机材料层58。另外,在外周侧镀敷区域62的外侧形成有由抗焊剂57将导体图案56的表面覆盖的环状第三抗焊剂区域63。并且,第三抗焊剂区域63的外侧区域成为导体图案56露出的接地电极部64。
另外,用于保护导体图案56的抗焊剂57通过对熔融状态的抗焊剂进行丝网印刷而将其以均匀的厚度涂敷在基板52的表面,然后通过加热而使其固化。在本实施方式中,作为覆盖部件使用抗焊剂,除此之外,也可以使用丝图案等。另外,基板52的导体图案56通常使用铜箔,因此,作为内周侧镀敷区域60、外周侧镀敷区域62的无机材料层58使用Au为好。
在第三抗焊剂区域63内的一部分,使导体图案56露出而设有电极盘66a、66b。电极盘66a、66b与第三抗焊剂区域63的导体图案56分开而电气分离,经由通孔(未图示)与基板52背面的引出电极67电连接。
半导体元件53为具有膜片的各种传感检测用传感器芯片(例如音响传感器、压力传感器等)等,但在本实施方式中形成为检测音响振动的音响传感器(或将音响振动转换成电能的转换器)。该半导体元件53在对Si基板等进行加工而制作的基座71的上表面铺设检测音响振动的膜片72,利用静电方式等检测基于音响振动的膜片72的位移。在膜片72的下方,在基座71形成有截四棱锥形状的空洞73,空洞73上下贯通基座71。另外,空洞73只要水平截面形成多边形并上下贯通即可,不限于截四棱锥形状,也可以形成为截三棱锥形、截五棱锥形等截多棱锥形。或者,也可以将空洞73的上半形成截多棱锥形,将下部形成倒截棱锥形。膜片72将四角固定在基座71的上表面,在除四角之外的外周四边,在膜片72的下表面与基座71的上表面之间形成有间隙(通风口)。
半导体元件53的下表面将空洞73包围而成为方环状,通过装片树脂74粘接固定在基板52的装片用盘65之上。作为装片树脂74,使用具有柔软性的硅酮树脂等粘接树脂,在将涂敷于转印销(冲模)的装片树脂74转印到装片用盘65上之后,在其之上载置半导体元件53并以均等的力量进行按压,使装片树脂74加热固化而将半导体元件53固定。装片树脂除了将半导体元件53固定之外,也起到将来自外部环境的多余力截断而缓冲的作用。半导体元件53的端子和电极盘66a、66b由接合线(未图示)连接,由此,半导体元件53的端子与下表面的引出电极67导通。
如图4及图5所示,装片用盘65由内周侧镀敷区域60、第二抗焊剂区域61以及外周侧镀敷区域62形成。另外,在图5中,分别由虚线表示安装在基板52上表面的半导体元件53的下表面内周端和外周端的位置。半导体元件53的下表面内周端与装片用盘65的内周端(内周侧镀敷区域60的内周端)大致一致,装片用盘65的外周端(外周侧镀敷区域62的外周端)位于半导体元件53的下表面外周端的外侧。
在与空洞73的四角产生的槽部75的下端相对的位置,由蚀刻将装片用盘65(导体图案56)除去而形成有开口部76,在开口部76使基板芯材55露出。开口部76在图5中成为矩形,但开口部76的形成不限于矩形,也可以是圆形和矩形以外的多边形等。开口部76的大小可以为一边长0.20mm左右。将半导体元件53搭载在基板52上时的搭载精度为±0.05mm,故而若使开口部76的尺寸为一边0.20mm,则在槽部75的下端与开口部76的边缘之间最差也可确保0.05mm的间隙。
导电性罩54通过电阻率小的金属材料形成盖状,在下表面形成有用于收纳半导体元件53等的空间。在导电性罩54的下端部整个一周形成有大致水平延伸的凸缘77。
导电性罩54将半导体元件53等覆盖而载置在基板52之上,凸缘77的下表面通过导电性接合部件78与接地电极部64接合固定,并且通过导电性接合部件78的导电性而与接地电极部64电连接。由此,导电性罩54与下表面的背面侧接地图案68同电位(接地电位)。作为导电性接合部件78,使用导电性环氧树脂(例如含有银填充料的环氧树脂)和焊料等材料。
另外,在安装的半导体元件53为音响传感器的情况下,也可以在导电性罩54的顶部等开设使音响振动通过的孔(未图示)。另外,由导电性罩54和基板52构成的封装也可以对应于收纳的半导体元件53的种类而成为密封结构。例如,在只要将来自外部的灰尘、光等遮断即可的情况下,只要由封装将半导体元件53等覆盖即可,不必要求气密性,但在要求耐湿性和耐化学药品性时,封装具有气密性为好。
根据上述构成的半导体装置51,如图5所示,在装片用盘65上,在内周侧镀敷区域60与外周侧镀敷区域62之间的第二抗焊剂区域61,利用抗焊剂57将导体图案56的表面覆盖。硅酮树脂等装片树脂74相对于抗焊剂57的粘接强度比其相对于Cu、Au等无机材料的粘接强度高,因此通过在装片用盘65的一部分形成有抗焊剂57,能够提高基于装片树脂74的半导体元件53的粘接强度。
另外,在该半导体装置51中,在装片用盘65的内周部及外周部形成有被相对于装片树脂的浸润性差的无机材料层58覆盖的内周侧镀敷区域60和外周侧镀敷区域62,能够防止装片树脂74向装片用盘65的内周侧和外周侧流出。其理由如下。
作为装片树脂74,为了将来自外部的冲击等特性变动要因缓和,使用有硅酮树脂等柔软的树脂,其具有容易流动的性质。该硅酮树脂等树脂相对于相同的有机材料的抗焊剂而言,浸润性良好,接触角变小。并且,形成于导体图案56上的抗焊剂的端面不易成为直角,容易为倒角。因此,在由抗焊剂57将装片用盘65的整个面覆盖的情况下,涂敷装片树脂74时的接触角θ变小,其结果,被涂敷的装片树脂74容易从装片用盘65的端部流出,一旦装片树脂74流出,则流出量与时间一同增加。
对此,硅酮树脂等树脂相对于无机材料的浸润性差,接触角变大。并且,无机材料与抗焊剂相比,端面容易成为直角。因此,在由无机材料构成装片用盘65的内周部以及外周部的表面时,涂敷装片树脂74时的接触角θ变大,在装片用盘65的边缘,装片树脂74成为球面状,因此,不易使被涂敷的装片树脂74从装片用盘65的端部向外周侧或内周侧流出。
这样,若阻止装片树脂74从装片用盘65流出,则流出的装片树脂74将接地电极部64的一部分覆盖而阻碍导电性罩54向接地电极部64的接合,能够防止高频干扰的遮蔽性降低的现象。
另外,若从装片用盘65流出装片树脂47,则随着流出量的增加,半导体元件53与装片用盘65之间的装片树脂74的厚度变薄,但根据本实施方式,由于能够阻止装片树脂74的流出,故而通过管理装片树脂74的涂敷量而能够减小装片树脂74的厚度波动。其结果,能够将半导体元件53的接合强度均一化,空洞73的容积均一,装片树脂74的弹性均一,半导体装置51的品质稳定。
另外,由于能够防止装片树脂74的流出,故而能够增大半导体元件53的下表面的装片树脂74的厚度,能够进一步增强由装片树脂74截断多余的外力的效果。
接着,在本实施方式的半导体装置51中,在与槽部75的下端相对区域(槽部相对区域)将装片用盘65(导体图案56)除去而设有开口部76,故而涂敷在装片用盘65的装片树脂74与槽部75的下端接触的可能性小。因此,能够防止装片树脂74从槽部75的下端进入槽部75并在槽部75向上蔓延而到达基座71的上表面。
另外,在开口部76的周围形成有与装片树脂74的浸润性差且端面容易成为直角的、由Au等无机材料构成的无机材料层58,故而通过无机材料层58阻挡要向开口部76流动的装片树脂74。另一方面,基座71由Si形成,与硅酮树脂等装片树脂74的浸润性良好,故而在内周侧镀敷区域60的前端滞留的装片树脂74沿基座71的外周侧面向上蔓延而形成较大的树块。结果,阻止向装片用盘65的内周侧流动的装片树脂74在开口部76内溢出或流入。由此,防止在开口部76内溢出或流入的装片树脂74与槽部75的下端接触而在槽部75向上蔓延。另外,开口部76的整个一周被无机材料层58包围为好,但在该实施方式中如图5所示,也可以在仅在装片树脂74流动的方向上在开口部76的周围形成有无机材料层58。
另外,装片用盘65的外周端位于半导体元件53的下表面外周端的外侧,半导体元件53的下表面外周端位于第二抗焊剂区域61之上,故而装片树脂74被向内周侧的外周侧拉伸而容易向外周侧溢出。因此,能够减少向开口部76的设置的内周侧流动的装片树脂74的量,装片树脂74不易在开口部76内溢出或流入,能够防止装片树脂74与槽部75的下端接触而在槽部75向上蔓延。
这样,熔融状态的装片树脂74不与槽部75的下端接触而在槽部75向上蔓延,能够防止由装片树脂74将膜片72固着在基座71上,或作为异物夹在膜片72与基座71的间隙中而阻碍振动和位移的不良情况。
另外,在该半导体装置51中,通过接地的导电性罩54和接地的具有背面侧接地图案68和导体图案56的基板52构成法拉第罩,故而能够截断外部的高频干扰对半导体元件53的影响,能够降低半导体元件53由外部干扰造成的影响。
另外,由于通过导电图案将基板52的表背面都大致正面地覆盖,故而能够防止由于温度变化等造成的基板52的翘曲。
(第二实施方式)
图6是表示本发明实施方式2的半导体装置81的构造的剖面图,表示安装导电性罩54之前的状态。图7是半导体装置81所使用的基板52的俯视图,将其一部分放大进行表示。在该实施方式中,将实施方式1中的第三抗焊剂区域63除去而设置槽部82,在槽部82内使基板芯材55露出。若形成这样的槽部82,则由装片用盘65(或者外周侧镀敷区域62)的外周端阻挡装片树脂74的效果提高,装片树脂74不易向装片用盘65的外侧流动而附着在接地电极部64上。
另外,在该实施方式中,如图7所示,使内周侧镀敷区域60的内周端位于半导体元件53下表面的内周端(空洞73的边缘)的内侧,由内周侧镀敷区域60将开口部76的整周包围。内周侧镀敷区域60的表面由相对于装片树脂74的浸润性差且端面容易成直角的无机材料层58形成,故而装片树脂74在开口部76的整个一周被挡住,更加难以向开口部76内流入,装片树脂74与槽部75的下端接触的可能性更小。
(第二实施方式的变形例)
图8是表示实施方式2的变形例的构造的剖面图,表示安装导电性罩54之前的状态。在该变形例中,在开口部76的底面将基座芯材55去掉而设有挖入部83。由于在开口部76内设有挖入部83,故而开口部76的深度增加,万一装片树脂74流入开口部76内,装片树脂74也难以接触槽部75的下端,装片树脂74在槽部75传播而向上蔓延的可能性变小。
另外,关于加深开口部76的方面,也能够适用于实施方式2之外的实施方式。
(第三实施方式)
图9是表示本发明实施方式3的半导体装置91的构造的剖面图,表示安装导电性罩54之前的状态。图10是半导体装置91所使用的基板52的俯视图,将其一部分放大进行表示。在该实施方式中,将实施方式2中的外周侧镀敷区域62除去而扩大槽部82,进而使第二抗焊剂区域61的外周端与半导体元件53下表面的外周端大致一致。根据本实施方式,由于能够扩大槽部82,故而向外侧流出的装片树脂74不易向接地电极部64流动。
(第四实施方式)
图11是表示本发明实施方式4的半导体装置101的构造的剖面图,表示安装导电性罩54之前的状态。图12是半导体装置101所使用的基板52的俯视图,将其一部分放大进行表示。在该实施方式中,将实施方式2中的第一抗焊剂区域59除去而使基板芯材55露出。而且,通过使内周侧镀敷区域60的内周端比半导体元件53的下表面内周端(空洞73的边缘)更靠外周侧,包含槽部相对区域在内而在内周侧镀敷区域60的内侧的整体形成有开口部。在该实施方式中,将装片用盘65的内侧整体形成开口部76,通过将第一抗焊剂区域59除去而提高由装片用盘65(或者,内周侧镀敷区域60)的内周端阻挡装片树脂74的效果,故而进一步提高防止装片树脂74在槽部75向上蔓延的效果。
Claims (4)
1.一种半导体装置,具有:半导体元件,其由水平截面形成多边形的空洞上下贯通基座,将所述空洞覆盖而在所述基座之上配设有膜片;基板,其形成有装片用盘,通过装片树脂将所述半导体元件的下表面粘接在所述装片用盘之上,其特征在于,
所述装片用盘以与所述半导体元件的空洞内周面的壁面与壁面相交而形成的槽部的下端部不接触的方式而形成,
所述基板为印刷基板,所述装片用盘包含所述印刷基板的导体图案而形成,
在与所述槽部的下端相对的区域,将所述导体图案除去。
2.如权利要求1所述的半导体装置,其特征在于,所述导体图案除去区域的外周部分的所述导体图案的表面至少一部分由Cu、Au形成。
3.如权利要求1所述的半导体装置,其特征在于,所述装片用盘的外周缘位于所述半导体元件的下表面外周缘的外侧。
4.如权利要求1所述的半导体装置,其特征在于,所述半导体元件的下表面除了所述槽部的下端附近区域之外,将整个面粘接在所述装片用盘上。
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US10322481B2 (en) * | 2014-03-06 | 2019-06-18 | Infineon Technologies Ag | Support structure and method of forming a support structure |
US10879211B2 (en) | 2016-06-30 | 2020-12-29 | R.S.M. Electron Power, Inc. | Method of joining a surface-mount component to a substrate with solder that has been temporarily secured |
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