CN102122659B - Bipolar complementary metal oxide semiconductor device and preparation method thereof - Google Patents
Bipolar complementary metal oxide semiconductor device and preparation method thereof Download PDFInfo
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- CN102122659B CN102122659B CN201110009216.0A CN201110009216A CN102122659B CN 102122659 B CN102122659 B CN 102122659B CN 201110009216 A CN201110009216 A CN 201110009216A CN 102122659 B CN102122659 B CN 102122659B
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Abstract
The present invention relates to a kind of bipolar complementary metal oxide semiconductor device and preparation method thereof.Described bipolar complementary metal oxide semiconductor device comprises transverse diffusion metal oxide semiconductor device and bipolar transistor, described bipolar transistor comprises the conductive type well for the formation of collector electrode, described transverse diffusion metal oxide semiconductor device comprises substrate and is formed at the drift region in described substrate, doping content and the described conductive type well of described drift region are formed simultaneously, and doping content is consistent.Bipolar complementary metal oxide semiconductor device of the present invention reduces integrated cost, makes the system level chip forming radio frequency become possibility.
Description
Technical field
The present invention relates to a kind of bipolar complementary metal oxide semiconductor device and preparation method thereof.
Background technology
Bipolar complementary metal oxide semiconductor (BipolarCMOS, BiCMOS) be technology cmos device and bipolar device are simultaneously integrated on same chip, its basic thought take cmos device as formant circuit, and requiring to drive bulky capacitor load part to add bipolar device or circuit.Therefore BiCMOS circuit had both had the advantage of cmos circuit high integration, low-power consumption, obtained again the advantage of bipolar circuit high speed, strong current drive ability.
In recent years, usually in the silicon materials of bipolar transistor, introduce germanium form sige alloy to adjust band structure, as the base region of bipolar transistor, such transistor is called as silicon germanium heterojunction bipolar transistor (SiGeHeterojunctionBipolarTransistor, SiGeHBT), the performance of described silicon germanium heterojunction bipolar transistor is obviously better than silicon bipolar transistor, and therefore, silicon germanium heterojunction bipolar transistor obtains swift and violent development in recent years.
Laterally Diffused Metal Oxide Semiconductor (LaterallyDiffusedMetalOxideSemiconductor, LDMOS) device is widely used because having the characteristics such as better thermal stability, frequency stability, higher gain, durability, constant input impedance.In order to increase the puncture voltage of transverse diffusion metal oxide semiconductor device, between the active area and drain region of Laterally Diffused Metal Oxide Semiconductor, there is a drift region (driftregion).When transverse diffusion metal oxide semiconductor device connects high pressure, higher voltage, owing to being high resistant, can be born in drift region.Therefore, the drift region in Laterally Diffused Metal Oxide Semiconductor is the key of such device layout.
But traditional complex process transverse diffusion metal oxide semiconductor device and bipolar transistor are integrated in bipolar complementary metal oxide semiconductor device, cost is higher.
Summary of the invention
The object of the present invention is to provide a kind of bipolar complementary metal oxide semiconductor device that can reduce costs.
Another object of the present invention is to the preparation method that a kind of above-mentioned bipolar complementary metal oxide semiconductor device is provided.
A kind of bipolar complementary metal oxide semiconductor device, comprise transverse diffusion metal oxide semiconductor device and bipolar transistor, described bipolar transistor comprises the conductive type well for the formation of collector electrode, described transverse diffusion metal oxide semiconductor device comprises substrate and is formed at the drift region in described substrate, doping content and the described conductive type well of described drift region are formed simultaneously, and its doping content is consistent.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described bipolar complementary metal oxide semiconductor device is SiGe bipolar complementary metal oxide semiconductor device.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, the doping content of described drift region and the doping order of magnitude of described conductive type well are 1e16-1e17.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises the isolated groove and drain diffusion regions that are formed at described drift region.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises the drain diffusion regions being formed at described substrate, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises the P type trap being formed at described drift region and the source diffusion region being formed at described P type trap, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises the oxide layer and grid that are formed at described substrate surface.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described bipolar transistor is npn type bipolar transistor device.
A kind of preparation method of bipolar complementary metal oxide semiconductor device, described bipolar complementary metal oxide semiconductor device comprises transverse diffusion metal oxide semiconductor device and bipolar transistor, and the preparation method of described bipolar complementary metal oxide semiconductor device comprises the steps: to form substrate; The synchronous formation collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device over the substrate.
The preferred a kind of technical scheme of above-mentioned preparation method, described collector electrode conductive type well and described drift region are formed by the method for ion implantation.
Compared with prior art, bipolar complementary metal oxide semiconductor device of the present invention comprises transverse diffusion metal oxide semiconductor device, and the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device are synchronously formed.Due to, the technique of described transverse diffusion metal oxide semiconductor device and the technique of described bipolar transistor completely compatible, do not need extra processing step, therefore, the radio-frequency devices technique in bipolar complementary metal oxide semiconductor device and power supply apparatus technique is made to can be good at integrating, reduce integrated cost, make the system level chip forming radio frequency become possibility.
Accompanying drawing explanation
Fig. 1 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of first embodiment of the invention.
Fig. 2 is the structural representation of the bipolar transistor device in bipolar complementary metal oxide semiconductor device of the present invention.
Fig. 3 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of second embodiment of the invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
Refer to Fig. 1, Fig. 1 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of first embodiment of the invention.Described transverse diffusion metal oxide semiconductor device comprises substrate 11, the drift region 12 be formed in described substrate 11, the isolated groove 13 being formed at described drift region 12 and drain diffusion regions 14, the source diffusion region 15 be formed in described substrate 11, the oxide layer 16 being formed at described substrate 11 surface and grid 17.Described source diffusion region 15 and described drain diffusion regions 14 are formed at the both sides of described isolated groove 13.Preferably, described bipolar complementary metal oxide semiconductor device is SiGe bipolar complementary metal oxide semiconductor device.Described isolated groove 13 is shallow isolated grooves.Described substrate 11 is P type substrate, and described source diffusion region 15 and described drain diffusion regions 14 are diffusion regions of N-shaped doping.
Refer to Fig. 2, Fig. 2 is the structural representation of the bipolar transistor device in bipolar complementary metal oxide semiconductor device of the present invention.Described bipolar transistor device comprises substrate 21, the conductive type well 22 be formed in described substrate 21, isolated groove 23, the collector electrode 25 being formed at described conductive type well 22, the base stage 26 being formed at described substrate 21 surface and the emitter 28 be electrically connected by contact hole 27 with described base stage 26.Preferably, described base stage 26 is P-SiGe epitaxial loayers.Described bipolar transistor is npn type bipolar transistor device.
The conductive type well 22 of the drift region 12 of described transverse diffusion metal oxide semiconductor device and described bipolar transistor device is synchronously formed, and namely the doping content of described drift region 12 is consistent with the doping content of described conductive type well 22.Preferably, the doping content of described drift region 12 and the doping order of magnitude (dopinglevel) of described conductive type well 22 are 1e16-1e17.Described conductive type well 22 and described drift region 12 are formed by the method for ion implantation (IMP), preferably, by the mode of three step ion implantations to improve doping effect.
Please participate in Fig. 3, Fig. 3 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of second embodiment of the invention.The transverse diffusion metal oxide semiconductor device of present embodiment comprises substrate 31, the drift region 32 be formed in described substrate 31, the isolated groove 33 being formed at described drift region 32 and drain diffusion regions 34, the P type trap 38 being formed at described drift region 32, the source diffusion region 35 being formed at described P type trap 38, the oxide layer 36 being formed at described substrate 31 surface and grid 37.Described source diffusion region 35 and described drain diffusion regions 34 are formed at the both sides of described isolated groove 33.Because P type trap can be completely isolated by drift region 32, the transverse diffusion metal oxide semiconductor device of present embodiment better can be applied to RF application.
The preparation method of bipolar complementary metal oxide semiconductor device of the present invention mainly comprises the steps:
Form substrate;
Synchronously form the collector electrode conductive type well of bipolar transistor and the drift region of transverse diffusion metal oxide semiconductor device over the substrate.Preferably, described collector electrode conductive type well and described drift region form to improve doping effect by the method for ion implantation, and the doping content of described drift region and the doping order of magnitude of described conductive type well 22 are 1e16-1e17.
Compared with prior art, bipolar complementary metal oxide semiconductor device of the present invention comprises transverse diffusion metal oxide semiconductor device, and the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device are synchronously formed.Due to, the technique of described transverse diffusion metal oxide semiconductor device and the technique of described bipolar transistor completely compatible, do not need extra processing step, therefore, make the radio-frequency devices technique in bipolar complementary metal oxide semiconductor device can be good at integrating with power supply apparatus technique, reduce integrated cost, make the system level chip (SystemOnChip, SOC) forming radio frequency become possibility.
Many embodiments having very big difference can also be formed when without departing from the spirit and scope of the present invention.Should be appreciated that except as defined by the appended claims, the invention is not restricted to specific embodiment described in the description.
Claims (10)
1. a bipolar complementary metal oxide semiconductor device, it is characterized in that: comprise transverse diffusion metal oxide semiconductor device and bipolar transistor, described bipolar transistor comprises the conductive type well for the formation of collector electrode, described transverse diffusion metal oxide semiconductor device comprises substrate and is formed at the drift region in described substrate, doping content and the described conductive type well of described drift region are formed simultaneously, and its doping content is consistent.
2. bipolar complementary metal oxide semiconductor device as claimed in claim 1, it is characterized in that, described bipolar complementary metal oxide semiconductor device is SiGe bipolar complementary metal oxide semiconductor device.
3. bipolar complementary metal oxide semiconductor device as claimed in claim 1, it is characterized in that, the doping order of magnitude of described drift region and described conductive type well is 1e16-1e17.
4. bipolar complementary metal oxide semiconductor device as claimed in claim 1, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises the isolated groove and drain diffusion regions that are formed at described drift region.
5. bipolar complementary metal oxide semiconductor device as claimed in claim 4, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises the source diffusion region being formed at described substrate, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
6. bipolar complementary metal oxide semiconductor device as claimed in claim 4, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises the P type trap being formed at described drift region and the source diffusion region being formed at described P type trap, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
7. as the bipolar complementary metal oxide semiconductor device in claim 1 to 6 as described in any one, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises the oxide layer and grid that are formed at described substrate surface.
8. as the bipolar complementary metal oxide semiconductor device in claim 1 to 6 as described in any one, it is characterized in that, described bipolar transistor is npn type bipolar transistor device.
9. the preparation method of a bipolar complementary metal oxide semiconductor device, it is characterized in that, described bipolar complementary metal oxide semiconductor device comprises transverse diffusion metal oxide semiconductor device and bipolar transistor, and the preparation method of described bipolar complementary metal oxide semiconductor device comprises the steps:
Form substrate;
The synchronous formation collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device over the substrate.
10. the preparation method of bipolar complementary metal oxide semiconductor device as claimed in claim 9, it is characterized in that, described collector electrode conductive type well and described drift region are formed by the method for ion implantation.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
| CN1734748A (en) * | 2004-08-13 | 2006-02-15 | 上海先进半导体制造有限公司 | Process for manufacturing 0.8 micron silicon bipolar CMOS integrated circuit |
| CN101211786A (en) * | 2007-12-21 | 2008-07-02 | 上海宏力半导体制造有限公司 | Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance |
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
-
2011
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
| CN1734748A (en) * | 2004-08-13 | 2006-02-15 | 上海先进半导体制造有限公司 | Process for manufacturing 0.8 micron silicon bipolar CMOS integrated circuit |
| CN101211786A (en) * | 2007-12-21 | 2008-07-02 | 上海宏力半导体制造有限公司 | Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance |
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
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