CN102122653B - Production process of bipolar light-emitting diode - Google Patents
Production process of bipolar light-emitting diode Download PDFInfo
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- CN102122653B CN102122653B CN 201010002814 CN201010002814A CN102122653B CN 102122653 B CN102122653 B CN 102122653B CN 201010002814 CN201010002814 CN 201010002814 CN 201010002814 A CN201010002814 A CN 201010002814A CN 102122653 B CN102122653 B CN 102122653B
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Abstract
The invention discloses a production process of a bipolar light-emitting diode, and the production process provided by the invention comprises the steps such as fixing wafers, performing ultrasonic wire welding, smearing fluorescence, packaging a lens, forming, curing and the like; and a produced device comprises two blue wafers, the two wafers are arranged on the front surface and the reverse surface respectively and connected with pins via gold bonding wires, no matter whether forward current or reverse current passes through the pins, the device can always enable one wafer to emit light normally so as to excite YAG (yttrium aluminum garnet) fluorescent powder to emit white light. When the device is used for auxiliary lighting of a portable electric portable drill, the number of used elements can be reduced, the production cost can be reduced, space occupied by a lighting component can be reduced, and the design difficulty of a circuit can be simplified.
Description
[technical field]
The present invention relates to a kind of production technology of light-emitting diode, particularly relate to a kind of production technology that makes light-emitting diode have the bi directional conductibility characteristics of luminescence.
[background technology]
Along with LED gos deep into the life of people's work day by day as light source of new generation, its application is more and more extensive.A large amount of floor lights, particularly portable electric hand drill and screwdriver that are used for electric tool are wherein arranged.Because the portable hand electric drill mostly is direct current supply, electric drill has the rotating function, thus require secondary light source when boring rotating, all can normal luminous lighting.
Unilateral conduction is a remarkable characteristic of semiconductor components and devices, the illuminating emitting led unilateral conduction that has too, if be used for the floor light of portable hand electric drill, luminous when the electric drill forward, but it is not luminous during counter-rotating, general solution is in parallel with LED a positive and a negative, or adds on the line a rectifier bridge stack, thereby realizes that the electric drill rotating is that light illumination is arranged.Doing like this one is to have increased components and parts to have improved production cost, the 2nd, and make the portable hand electric drill originally more crowded with regard to limited circuit space, increased the difficulty of circuit design.
[summary of the invention]
The purpose of utility model is to have overcome defects, and a kind of production technology that realizes regardless of can the bi directional conductibility luminous bipolar light-emitting diode of positive-negative polarity is provided.
Purpose of the present invention is achieved through the following technical solutions: it may further comprise the steps:
One, wafer is fixed
Elder generation's LED wafer fixing glue on down-lead bracket Lamp cup mid point, the blue light wafer of two 455-465nm wavelength of use is arranged in the down-lead bracket Lamp cup with opposite polarity directions, then sends in the heated-air circulation roaster to be cured in 60-80 minute with 150-160 ℃ of baking;
Two, ultrasonic bonding wire
Material behind the baking-curing uses ultrasonic wave gold thread pellet bonding machine that chip bonding pads is connected with the support wire welding area with bonding gold wire, and two wafers link to each other with support the two poles of the earth with the opposed polarity direction respectively, form electric loop;
Three, smear fluorescence
At the YAG fluorescent material solution that the support Lamp cup mid point that welds line enters to prepare, then send into heated-air circulation roaster and carried out fluorescent powder curing in 60-80 minute with 115-130 ℃ of baking;
Four, lens packages
Utilize the diode glue injection equipment to prepare and deaeration after epoxy resin inject the TPX die cavity select, the support of having put fluorescent material is implanted the die cavity of injecting glue, then put into heated-air circulation roaster with baking under 120～130 ℃ temperature 60-80 minute;
Five, forming and hardening
Material after the primary solidification is taken out from die cavity, toasted 400-500 minute with 125～135 ℃ temperature again, it is solidified fully, just obtain having ambipolar LED encapsulation body.
In the above-mentioned steps, described down-lead bracket adopts SPCC ferrous material, electroplate.
In the above-mentioned steps, described wafer is GaN base blue light wafer.
In the above-mentioned steps, described fluorescent material is mineral-type YAG fluorescent material.
The present invention has the following advantages compared with prior art:
Main body of the present invention has comprised two blue light wafers, and two wafer a positive and a negative are arranged, link to each other with pin with bonding gold wire, no matter be that forward current passes through or reverse current during by pin, have a wafer normally the luminous YAG of exciting fluorescent material send white light;
Can reduce the components and parts use amount when being used for portable hand electric drill floor light, reduce production cost; Reduce light fixture and take up space, simplified the difficulty of circuit design;
The present invention does not have ultraviolet ray and ultrared radiation, does not have distribute heat yet, and is harmless, is the light source of new generation of the environmental protection that is worth promoting really, meets country's " energy-saving and emission-reduction " policy.
[embodiment]
Below further specify particular content of the present invention by following examples.
The production technology of embodiment 1 bipolar light-emitting diode may further comprise the steps:
One, wafer is fixed
Elder generation's LED wafer fixing glue on down-lead bracket Lamp cup mid point, the blue light wafer of two 455-465nm wavelength of use is arranged in the down-lead bracket Lamp cup with opposite polarity directions, then sends in the heated-air circulation roaster to be cured in 80 minutes with 150 ℃ of bakings; Described down-lead bracket adopts SPCC ferrous material, electroplate;
Two, ultrasonic bonding wire
Material behind the baking-curing uses ultrasonic wave gold thread pellet bonding machine that chip bonding pads is connected with the support wire welding area with bonding gold wire, and two wafers link to each other with support the two poles of the earth with the opposed polarity direction respectively, form electric loop;
Three, smear fluorescence
At the mineral-type YAG fluorescent material solution that the support Lamp cup mid point that welds line enters to prepare, then send into heated-air circulation roaster and carried out fluorescent powder curing in 80 minutes with 115 ℃ of bakings;
Four, lens packages
Utilize the diode glue injection equipment to prepare and deaeration after epoxy resin inject the TPX die cavity select, the support of having put fluorescent material is implanted the die cavity of injecting glue, then put into heated-air circulation roaster with baking under 120 ℃ the temperature 80 minutes;
Five, forming and hardening
Material after the primary solidification is taken out from die cavity, toasted 500 minutes with 125 ℃ temperature again, it is solidified fully, just obtain having ambipolar LED encapsulation body.
The production technology of embodiment 2 bipolar light-emitting diodes may further comprise the steps:
One, wafer is fixed
Elder generation's LED wafer fixing glue on down-lead bracket Lamp cup mid point, the blue light wafer of two 455-465nm wavelength of use is arranged in the down-lead bracket Lamp cup with opposite polarity directions, then sends in the heated-air circulation roaster to be cured in 60 minutes with 160 ℃ of bakings; Described down-lead bracket adopts SPCC ferrous material, electroplate;
Two, ultrasonic bonding wire
Material behind the baking-curing uses ultrasonic wave gold thread pellet bonding machine that chip bonding pads is connected with the support wire welding area with bonding gold wire, and two wafers link to each other with support the two poles of the earth with the opposed polarity direction respectively, form electric loop;
Three, smear fluorescence
At the mineral-type YAG fluorescent material solution that the support Lamp cup mid point that welds line enters to prepare, then send into heated-air circulation roaster and carried out fluorescent powder curing in 60 minutes with 130 ℃ of bakings;
Four, lens packages
Utilize the diode glue injection equipment to prepare and deaeration after epoxy resin inject the TPX die cavity select, the support of having put fluorescent material is implanted the die cavity of injecting glue, then put into heated-air circulation roaster with baking under 130 ℃ the temperature 60 minutes;
Five, forming and hardening
Material after the primary solidification is taken out from die cavity, toasted 400 minutes with 135 ℃ temperature again, it is solidified fully, just obtain having ambipolar LED encapsulation body.
Claims (4)
1. the production technology of a bipolar light-emitting diode, it is characterized in that: it may further comprise the steps:
One, wafer is fixed
Elder generation's LED wafer fixing glue on down-lead bracket Lamp cup mid point, the blue light wafer of two 455-465nm wavelength of use is arranged in the down-lead bracket Lamp cup with opposite polarity directions, then sends in the heated-air circulation roaster to be cured in 80 minutes with 150 ℃ of bakings;
Two, ultrasonic bonding wire
Material behind the baking-curing uses ultrasonic wave gold thread pellet bonding machine that chip bonding pads is connected with the support wire welding area with bonding gold wire, and two wafers link to each other with support the two poles of the earth with the opposed polarity direction respectively, form electric loop;
Three, smear fluorescence
At the YAG fluorescent material solution that the support Lamp cup mid point that welds line enters to prepare, then send into heated-air circulation roaster and carried out fluorescent powder curing in 80 minutes with 115 ℃ of bakings;
Four, lens packages
Utilize the diode glue injection equipment to prepare and deaeration after epoxy resin inject the TPX die cavity select, the support of having put fluorescent material is implanted the die cavity of injecting glue, then put into heated-air circulation roaster with baking under 120 ℃ the temperature 80 minutes;
Five, forming and hardening
Material after the primary solidification is taken out from die cavity, toasted 500 minutes with 125 ℃ temperature again, it is solidified fully, just obtain having ambipolar LED encapsulation body.
2. the production technology of described bipolar light-emitting diode according to claim 1, it is characterized in that: described down-lead bracket adopts SPCC ferrous material, electroplate.
3. the production technology of described bipolar light-emitting diode according to claim 1, it is characterized in that: described wafer is GaN base blue light wafer.
4. the production technology of bipolar light-emitting diode according to claim 1, it is characterized in that: described fluorescent material is mineral-type YAG fluorescent material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010002814 CN102122653B (en) | 2010-01-12 | 2010-01-12 | Production process of bipolar light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010002814 CN102122653B (en) | 2010-01-12 | 2010-01-12 | Production process of bipolar light-emitting diode |
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| Publication Number | Publication Date |
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| CN102122653A CN102122653A (en) | 2011-07-13 |
| CN102122653B true CN102122653B (en) | 2013-01-23 |
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| CN 201010002814 Expired - Fee Related CN102122653B (en) | 2010-01-12 | 2010-01-12 | Production process of bipolar light-emitting diode |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
| CN1945803A (en) * | 2006-10-27 | 2007-04-11 | 杭州中宙光电有限公司 | Packaging method for high power LED expansion light source device |
| CN201655797U (en) * | 2010-01-12 | 2010-11-24 | 四川柏狮光电技术有限公司 | Bipolar luminous LED |
-
2010
- 2010-01-12 CN CN 201010002814 patent/CN102122653B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6635987B1 (en) * | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
| CN1945803A (en) * | 2006-10-27 | 2007-04-11 | 杭州中宙光电有限公司 | Packaging method for high power LED expansion light source device |
| CN201655797U (en) * | 2010-01-12 | 2010-11-24 | 四川柏狮光电技术有限公司 | Bipolar luminous LED |
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| CN102122653A (en) | 2011-07-13 |
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| C14 | Grant of patent or utility model | ||
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| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Production process of bipolar light-emitting diode Effective date of registration: 20141022 Granted publication date: 20130123 Pledgee: Suining City Commercial Bank Limited by Share Ltd Jinlong branch Pledgor: Sichuan Bonshine Optical Electron Technology Co., Ltd. Registration number: 2014510000027 |
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| PLDC | Enforcement, change and cancellation of contracts on pledge of patent right or utility model | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130123 Termination date: 20200112 |