CN102110706B - 有机发光显示器及其制造方法 - Google Patents
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
提供了一种有机发光显示器和及其制造方法。一种有机发光显示器,包括:在基板上的栅电极;与所述栅电极绝缘的有源层;与所述栅电极绝缘并接触所述有源层的源电极和漏电极;在所述有源层与所述源电极和漏电极之间的绝缘层;光阻挡层,其在所述有源层上并且阻挡来自所述有源层的预定波长的光;以及电连接至所述源电极和漏电极中的一个的有机发光装置。
Description
技术领域
实施例涉及有机发光显示器及其制造方法。
背景技术
有源矩阵类型的有机发光显示器在每个像素中可以包括薄膜晶体管(TFT)以及与TFT相连的有机发光二极管(OLED)。
TFT的有源层(activelayer)可以由非晶硅或多晶硅形成。近来,已尝试利用氧化物半导体来形成TFT的有源层。
发明内容
实施例的一个特征在于提供一种包括薄膜晶体管(TFT)的有机发光显示器和一种制造有机发光显示器的方法,其中在该薄膜晶体管中,可以防止光、水和/或氧气的渗透。
实施例的另一特征在于提供一种有机发光显示器和一种制造有机发光显示器的方法,该有机发光显示器可以容易地应用于大尺寸的显示器装置,并且使其能够大规模生产。
以上和其它特征以及优点中的至少一个可以通过提供一种有机发光显示器实现,该有机发光显示器包括:在基板上的栅电极;与所述栅电极绝缘的有源层;与所述栅电极绝缘并接触所述有源层的源电极和漏电极;在所述有源层与所述源电极和漏电极之间的绝缘层;光阻挡层,在所述有源层上并且阻挡来自所述有源层的预定波长的光;以及电连接至所述源电极和漏电极中的一个的有机发光装置。
所述光阻挡层可以阻挡蓝光。
所述光阻挡层可以包括掺锰的钛酸钡、氮化钛以及电致变色的氧化镍中的至少一个。
所述光阻挡层可以在所述绝缘层上。
所述光阻挡层可以直接在所述绝缘层上。
所述有机发光显示器可以进一步包括覆盖所述栅极绝缘层、所述源电极和漏电极以及所述绝缘层的钝化层。所述光阻挡层可以在所述钝化层上。
所述光阻挡层可以布置在从所述有机发光装置发射的光的路径上,该光的路径入射至所述有源层。
从所述有机发光装置发射的光中至少一部分可以被所述光阻挡层反射。
所述有源层可以包括氧化物半导体。
从所述有机发光装置发射的光可以被发射向所述基板。
以上和其它特征以及优点中的至少一个还可以通过提供一种制造有机发光显示器的方法实现,所述方法包括:在基板上形成栅电极;形成与所述栅电极绝缘的有源层;形成与所述栅电极绝缘并接触所述有源层的源电极和漏电极;形成绝缘层,所述绝缘层在所述有源层与所述源电极和漏电极之间;在所述有源层上形成光阻挡层,所述光阻挡层至少覆盖所述有源层的沟道区;以及形成与所述源电极和漏电极电连接的有机发光装置。
所述方法可以进一步包括:在所述基板上形成栅极绝缘层以覆盖所述栅电极;在所述栅极绝缘层上形成有源层;形成至少覆盖所述有源层的沟道区的所述绝缘层;以及在所述绝缘层上形成所述光阻挡层,以便至少覆盖所述有源层的所述沟道区。
所述方法可以进一步包括:在所述基板上形成栅极绝缘层以覆盖所述栅电极;在所述栅极绝缘层上形成所述有源层;形成至少覆盖所述有源层的沟道区的所述绝缘层;在所述绝缘层上形成所述源电极和漏电极,以接触所述有源层;形成钝化层以覆盖所述栅极绝缘层、所述源电极和漏电极以及所述绝缘层;以及在所述钝化层上形成所述光阻挡层,以便至少覆盖所述有源层的所述沟道区。
所述光阻挡层可以阻挡蓝光。
所述光阻挡层可以包括掺锰的钛酸钡、氮化钛或电致变色的氧化镍中的至少一个。
所述光阻挡层可以布置在从所述有机发光装置发射的光的路径上,该路径入射至所述沟道区。
从所述有机发光装置发射的光中至少一部分可以被所述光阻挡层反射。
从所述有机发光装置发射的光可以被发射向所述基板。
所述有源层可以包括氧化物半导体。
附图说明
通过参照附图详细地描述示例性实施例,以上和其它特征以及优点对于本领域技术人员来说将变得更明显,其中:
图1图示说明根据第一实施例的有机发光显示器的剖面图;
图2图示说明根据第二实施例的有机发光显示器的剖面图;
图3图示说明用于解释第一实施例和第二实施例的特征的光路径图;以及
图4A至4E图示说明在制造图1的有机发光显示器的方法中的各阶段的剖面图。
具体实施方式
2009年12月23日在韩国知识产权局递交的题为“有机发光显示器及其制造方法”的韩国专利申请No.10-2009-0130020,通过参考整体合并于此。
现在将参照附图在下文中更完整地描述示例性实施例;然而,这些实施例可以以不同的形式具体实现,并且不应当被解释为限于此处提出的实施例。更确切地说,提供这些实施例使得本公开将是充分和完全的,并且将向本领域技术人员更完整地传达本发明的范围。
附图中,为了图示说明的清楚起见,层和区域的尺寸可以放大。还应当理解,当提到层或元件在另一层或基板“上”时,它可以直接在另一层或基板上,或者中间层也可以存在。进一步,应当理解,当提到层在另一层“下面”时,它可以直接在下面,并且一个或多个中间层也可以存在。另外,还应当理解,当提到层在两层“之间”时,它可以是这两层之间的唯一层,或者一个或多个中间层也可以存在。同样的附图标记始终表示同样的元件。
实施例涉及有机发光显示器及其制造方法。有机发光显示器在其像素中可以包括一个或多个薄膜晶体管(TFT)。
图1图示说明根据第一实施例的有机发光显示器的剖面图。
图1中,为了解释的方便起见,图示说明有机发光显示器中一个像素的一部分。应当理解,有机发光显示器可以包括多个这种像素。
参见图1,薄膜晶体管(TFT)2和有机发光装置3可以布置在基板1上。图1中,TFT2被图示说明为底部栅极类型(或先加工栅极)TFT。然而,应当理解,这些实施例也可以应用于有源层布置在栅极下面的顶部栅极类型TFT。有机发光显示器可以是从基板1的对面观看显示器的顶部发射类型显示器,或者是从基板1侧(图1中的底侧)观看显示器的底部发射类型显示器。
例如,在底部发射类型显示器的情况下,基板1可以由透明材料形成。例如,由诸如氧化硅之类的材料形成的缓冲层(未示出),可以进一步形成在基板1上。
在TFT2是底部栅极类型的情况下,TFT2可以包括形成在基板1上的栅电极21、覆盖栅电极21的栅极绝缘层22以及形成在栅极绝缘层22上的有源层23。绝缘层24可以形成在栅极绝缘22上以覆盖有源层23,并且源电极25和漏电极26可以形成在绝缘层24上。源电极25和漏电极26可以分别接触有源层23的源区和漏区。
如此处详细描述的那样,光阻挡层29可以形成以减少或消除光在有源层23上的照射。在图1中示出的实施例中,光阻挡层29可以形成在绝缘层24上以覆盖有源层23的至少一部分,例如沟道区23a以及与其相邻的源/漏区的部分。在实施中,光阻挡层29可以直接形成在绝缘层24上。与为了涂覆基板1的整个表面而涂的层相比,光阻挡层29可以相对小、经济并容易地形成,随着基板的尺寸,即显示器的尺寸增加,特征变得更加有利。
栅电极21可以由例如导电金属形成。栅电极21可以形成为单层或多层。栅电极21可以包括钼。
栅极绝缘层22可以由诸如氧化硅、氧化钽、氧化铝等绝缘材料形成。
有源层23可以被图案化在栅极绝缘层22上。有源层23可以由例如氧化物半导体形成。例如,氧化物半导体有源层23可以包括包含氧(O)以及镓(Ga)、磷(I)、铪(Hf)、锌(Zn)和锡(Sn)中至少一个的半导体体材料,例如ZnO、ZnGaO、ZnInO、GaInO、GaSnO、ZnSnO、InSnO、HfInZnO或者ZnGaInO。在实施中,氧化物半导体有源层23可以是H-I-Z-O层或者a(In2O3)b(Ga2O3)c(ZnO)(G-I-Z-O层),其中,a、b和c是分别满足a≥0,b≥0和c>0的实数。
绝缘层24可以形成为覆盖有源层23。绝缘层24可以保护有源层23的沟道区23a。在实施中,绝缘层24可以仅仅形成在沟道区23a上。在另一实施中,绝缘层24可以完全覆盖有源层23,除了有源层23的接触源电极25和漏电极26的部分之外。
光阻挡层29可以形成为覆盖绝缘层24。光阻挡层29可以保护有源层23的沟道区23a免于暴露于光。在实施中,光阻挡层29可以阻挡蓝光,例如,具有大约450nm波长的光,或者对于蓝光是选择性的。在实施中,光阻挡层可以仅仅形成在沟道区23a上。在另一实施(未示出)中,光阻挡层29可以覆盖有源层23,除了有源层23的接触源电极25和漏电极26的部分之外。下面将进一步详细地描述光阻挡层29。
源电极25和漏电极26可以形成在光阻挡层29上,以便接触有源层23。钝化层27可以形成在光阻挡层29上,以覆盖源电极25和漏电极26。有机发光装置3的接触漏电极26的第一电极31,可以形成在钝化层27上。第一电极31通过例如图案化形成在每个像素中。
暴露第一电极31的一部分的像素限定层(PDL)28,可以形成在钝化层27上。有机层32可以形成在第一电极31的被PDL28暴露的部分上。第二电极33可以形成在有机层32上。
PDL28可以形成为覆盖第一电极31的端部。除限定发光区之外,PDL28可以加宽第一电极31的端部和第二电极33的端部之间的距离,从而防止电场聚集在第一电极的端部上。因此,第一电极31与第二电极33之间的短路可以被防止。
在朝向第二电极33形成图像的顶部发射类型有机发光显示器中,第一电极31可以是反射电极。在这种情况下,由Al和Ag等合金形成的反射层可以用于第一电极31。
当第一电极31用作阳极时,第一电极31可以包括由诸如ITO、IZO或ZnO之类的具有高的功函数(绝对值)的金属氧化物形成的层。当第一电极31用作阴极时,第一电极31可以包括具有低的功函数(绝对值)的高导电金属,例如Ag、Mg、Al、Pt、Pd、Au、Ni、Nd、Ir、Cr、Li或Ca。在这种情况下,可以省略单独的反射层。
在顶部发射类型有机发光显示器中,第二电极33可以是光透射电极。在这种情况下,第二电极33可以包括包含由Ag、Mg、Al、Pt、Pd、Au、Ni、Nd、Ir、Cr、Li或Ca形成的薄膜或者诸如ITO、IZO或ZnO之类的光透射金属氧化物的半透射反射层。当第一电极31用作阳极时,第二电极33用作阴极,并且当第一电极用作阴极时,第二电极33用作阳极。
插入在第一电极31和第二电极33之间的有机层32可以是,或者可以包括发射层。在实施中,有机层32可以由堆叠结构形成,其中空穴注入层、发射层、电子注入层和电子传输层等被堆叠。
尽管在图1中未示出,但保护层可以进一步形成在第二电极33上,并且像素可以使用例如玻璃封装在其顶部上。
现在将进一步详细地描述图1中有机发光显示器的光阻挡层29。
当有源层23利用氧化物半导体形成时,优选地,光、氧气和水被阻挡。在这些当中,在制造有机发光显示器时可以通过使用第一电极31和第二电极33或者使用封装工艺在某种程度上阻挡氧气和水。在入射至TFT2的光中,外部光可以通过使用例如UV涂层、黑矩阵等被阻挡。然而,从显示器自身发射的光,例如从有机发光装置3的有机层32发射的具有大约450nm波长的蓝光之类的光,可能会对TFT2产生不利地影响。
图3图示说明用于解释第一实施例和第二实施例的特征的光路径图。参见图3,有两条路径,从有机层32发射的光可以通过这两条路径入射至TFT2。第一条路径是图3中用字母A表示的路径,并且从有机层32发射的光通过该路径被照射至源电极25和漏电极26与栅电极21之间的有源层23。在源电极25和漏电极26与栅电极21之间的距离为仅仅大约350nm即蓝光的波长(大约450nm)的情况下,光照射至TFT2有相对低的概率。第二条路径是图3中用字母B表示的路径,并且从有机层32发射的光通过该路径经由PDL28和钝化层27被照射至有源层23。在第二种情况下,光在源电极25和漏电极26之间穿过。同样地,源电极25和漏电极26与第二电极33之间的距离可以是大约1800nm或更大,使得从有机层32发射的光很可能被导引至有源层23。
在根据第一实施例的有机发光显示器中,绝缘层24和光阻挡层29可以形成在有源层23上。因此,在根据第一实施例的有机发光显示器中,从有机层32发射的光可能被阻挡或过滤免于直接入射至有源层23。
光阻挡层29形成在从有机层32入射至TFT2的光的光路径上。光阻挡层29可以由能够阻挡蓝光的材料形成。例如,掺锰(Mn)的钛酸钡(BaTiO3)、氮化钛(TiN)或者电致变色的氧化镍(NiO),可以用作光阻挡层29。这些材料大部分是褐色的,并且可以阻挡蓝光。在实施中,覆盖光阻挡层29并插在光阻挡层29与源电极25/漏电极26之间绝缘层30可以用来防止光阻挡层29与源电极25/漏电极26之间的电接触。
如以上结合第一实施例描述的那样,有机发光显示器可以被构建,使得蓝光可以被防止直接入射至有源层23,这可以增加氧化物半导体层的稳定性、减少产品缺陷并增加用户方便。
图2图示说明根据第二实施例的有机发光显示器的剖面图。
参见图2,光阻挡层29′可以形成在钝化层27上。例如,源电极25、漏电极26和钝化层27可以顺次形成在绝缘层24上,并且光阻挡层29′可以形成在钝化层27的与有源层23对应的一部分上。光阻挡层29′依尺寸制造并被放置以挡住从有机层32入射至TFT2的光的路径。相应地,有机发光显示器装置的可靠性可以增加。
图4A至4E图示说明在制造包括图1中示出的光阻挡层29的有机发光显示器的方法中的各阶段的剖面图。
参见图4A,首先,可以提供基板1。基板1可以由硅(Si)、玻璃或有机材料形成。在有机发光显示器装置是底部发射类型显示器的情况下,基板1可以是透明的。当使用Si基板时,诸如氧化硅(未示出)之类的绝缘层可以利用例如热氧化工艺形成在Si基板的表面上。接下来,基板1可以涂有诸如金属或导电氧化物之类的导电材料,然后被图案化以形成栅电极21。
接下来,参见图4B,绝缘材料可以涂覆在栅电极21上,并且被图案化以形成栅极绝缘层22。
接下来,参见图4C,诸如氧化物半导体材料之类的半导体材料,可以沉积在栅极绝缘层22的与栅电极21对应的一部分上。半导体材料可以使用例如物理气相沉积方法(PVD)、化学气相沉积(CVD)方法或原子层沉积(ALD)方法沉积。半导体材料可以被图案化以形成有源层23。半导体材料的实例包括a(In2O3)b(Ga2O3)c(ZnO)层(G-I-Z-O层)以及铪-铟-锌氧化物(H-I-Z-O)层,其中,a、b和c是分别满足a≥0,b≥0和c>0的实数。
接下来,参见图4D,绝缘材料可以涂覆在有源层23上以覆盖有源层23的沟道层23a。绝缘材料可以被图案化以形成绝缘层24。然后,光阻挡材料(用于光阻挡层29)可以涂覆在绝缘层24上以覆盖被图案化的绝缘层24。在另一实现中,可以在有源层上涂覆绝缘材料以覆盖有源层23的沟道层23a,可以在绝缘材料上涂覆光阻挡材料,并且可以将光阻挡材料与下面的绝缘材料同时进行图案化以形成绝缘层24和光阻挡层29。光阻挡材料可以由包括旋转涂覆、溅射、化学气相沉积、电子束等任何合适的沉积方法进行沉积。
光阻挡层29可以由能够阻挡蓝光的材料形成。例如,掺锰的钛酸钡(BaTiO3)、氮化钛(TiN)或者电致变色的氧化镍(NiO),可以用作光阻挡层29。这些材料大部分是褐色的,并且可以阻挡蓝光。光阻挡层29形成在从有机层32入射至TFT2的光的路径上。
然后,绝缘层30可以被形成以便在光阻挡层29与源/漏电极25、26(以下所述的)之间插入,以防止光阻挡层29与源/漏电极25、26之间的电接触。在一实现中,可以在光阻挡层29上涂覆绝缘材料以覆盖其所暴露的表面,例如顶表面和侧表面,从而将光阻挡层与源/漏电极25、26进行电绝缘。在一实现中,可以在有源层上涂覆绝缘材料以覆盖有源层23的沟道层23a,可以在绝缘材料上涂覆光阻挡材料,并且可以将光阻挡材料与下面的层间绝缘材料同时进行图案化以形成绝缘层24和光阻挡层29,其后,可以形成绝缘层30以覆盖光阻挡层29。
接下来,参见图4E,金属或导电金属氧化物(用于源电极25和漏电极26)可以涂覆在栅极绝缘层22、有源层23和光阻挡层29上。金属或导电金属氧化物可以被图案化以形成源电极25和漏电极26。
随后,钝化层27可以形成以覆盖源电极25和漏电极26。接触孔可以形成在钝化层27中,并且有机发光装置3的接触漏电极26的第一电极可以通过接触孔形成。接下来,暴露第一电极31的一部分的PDL28可以形成在钝化层27上,并且有机层32和第二电极33可以形成在第一电极31的被PDL28暴露的部分上,从而完成图1中图示说明的结构。
如上所述,根据实施例的有机发光显示器防止诸如蓝光之类的光直接入射至TFT2,这可以增加TFT2中氧化物半导体的稳定性、减少产品缺陷并增加用户便利。
诸如阈值电压、S因子(S-factor)等之类的氧化物半导体的特性,可能因水、氧气或光的渗透而改变。同样地,阈值电压因水、氧气或光而改变可能在TFT的驱动期间被栅电极的DC偏压进一步增加,因此DC稳定性对于氧化物半导体的使用是较重要的问题。为了提高氧化物半导体对抗水或氧气的障壁特性,可以使用氧化铝(AlOx)层或氮化钛(TiN)层。然而,当应用于大尺寸的基板时,使用反应溅射方法或原子层沉积(ALD)方法形成这些层可能比较困难,使得这些层的大规模生产率可能较低。相反,以上结合第一和第二实施例所描述的有机发光显示器,可以使用光阻挡层29防止诸如蓝光之类的光直接入射至TFT2。
示例性实施例在此处已被公开,并且虽然特定术语被采用,但它们仅从一般和描述性的意义上使用和解释,并且并非用于限制的目的。相应地,本领域技术人员应当理解,可以对形式和细节做出各种改变,只要不背离在以下权利要求书中提出的本发明的精神和范围。
Claims (17)
1.一种有机发光显示器,包括:
在基板上的栅电极;
与所述栅电极绝缘的有源层;
与所述栅电极绝缘并接触所述有源层的源电极和漏电极;
在所述有源层与所述源电极和漏电极之间的绝缘层;
光阻挡层,其在所述有源层上并且阻挡预定波长的光入射至所述有源层;以及
电连接至所述源电极和漏电极中的一个的有机发光装置,
其中所述光阻挡层包括掺锰的钛酸钡以及电致变色的氧化镍中的至少一个。
2.根据权利要求1所述的有机发光显示器,其中所述光阻挡层阻挡蓝光。
3.根据权利要求1所述的有机发光显示器,其中所述光阻挡层在所述绝缘层上。
4.根据权利要求3所述的有机发光显示器,其中所述光阻挡层直接在所述绝缘层上。
5.根据权利要求3所述的有机发光显示器,进一步包括:
覆盖所述栅电极的栅极绝缘层;以及
覆盖所述栅极绝缘层、所述源电极和漏电极以及所述绝缘层的钝化层,
其中所述光阻挡层在所述钝化层上。
6.根据权利要求1所述的有机发光显示器,其中所述光阻挡层布置在从所述有机发光装置发射的光的路径上,该光的路径入射至所述有源层。
7.根据权利要求1所述的有机发光显示器,其中从所述有机发光装置发射的光中至少一部分被所述光阻挡层反射。
8.根据权利要求1所述的有机发光显示器,其中所述有源层包括氧化物半导体。
9.根据权利要求1所述的有机发光显示器,其中从所述有机发光装置发射的光被发射向所述基板。
10.一种制造有机发光显示器的方法,所述方法包括:
在基板上形成栅电极;
形成与所述栅电极绝缘的有源层;
形成与所述栅电极绝缘并接触所述有源层的源电极和漏电极;
形成绝缘层,所述绝缘层在所述有源层与所述源电极和漏电极之间;
在所述有源层上形成光阻挡层,所述光阻挡层至少覆盖所述有源层的沟道区;以及
形成与所述源电极和漏电极电连接的有机发光装置,
其中所述光阻挡层包括掺锰的钛酸钡以及电致变色的氧化镍中的至少一个。
11.根据权利要求10所述的制造有机发光显示器的方法,进一步包括:
在所述基板上形成栅极绝缘层以覆盖所述栅电极;
在所述栅极绝缘层上形成有源层;
形成至少覆盖所述有源层的沟道区的所述绝缘层;以及
在所述绝缘层上形成所述光阻挡层,以便至少覆盖所述有源层的所述沟道区。
12.根据权利要求10所述的制造有机发光显示器的方法,进一步包括:
在所述基板上形成栅极绝缘层以覆盖所述栅电极;
在所述栅极绝缘层上形成所述有源层;
形成至少覆盖所述有源层的沟道区的所述绝缘层;
在所述绝缘层上形成所述源电极和漏电极,以接触所述有源层;
形成钝化层以覆盖所述栅极绝缘层、所述源电极和漏电极以及所述绝缘层;以及
在所述钝化层上形成所述光阻挡层,以便至少覆盖所述有源层的所述沟道区。
13.根据权利要求10所述的制造有机发光显示器的方法,其中所述光阻挡层阻挡蓝光。
14.根据权利要求10所述的制造有机发光显示器的方法,其中所述光阻挡层布置在从所述有机发光装置发射的光的路径上,该光的路径入射至所述沟道区。
15.根据权利要求10所述的制造有机发光显示器的方法,其中从所述有机发光装置发射的光中至少一部分被所述光阻挡层反射。
16.根据权利要求10所述的制造有机发光显示器的方法,其中从所述有机发光装置发射的光被发射向所述基板。
17.根据权利要求10所述的制造有机发光显示器的方法,其中所述有源层包括氧化物半导体。
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