CN102089863A - Chamber components for CVD applications - Google Patents
Chamber components for CVD applications Download PDFInfo
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- CN102089863A CN102089863A CN2009801280825A CN200980128082A CN102089863A CN 102089863 A CN102089863 A CN 102089863A CN 2009801280825 A CN2009801280825 A CN 2009801280825A CN 200980128082 A CN200980128082 A CN 200980128082A CN 102089863 A CN102089863 A CN 102089863A
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Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45512—Premixing before introduction in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
Abstract
Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.
Description
Technical field
Embodiments of the invention relate generally to be used for the chamber part that chemical vapor deposition (CVD) is used.
Background technology
In the manufacturing of integrated circuit, for reaching consistent results in the substrate and the reproducibility as a result between the substrate, the accurate control of various technological parameters is necessary.In technical process, changing the processing gas flow and the distribution of crossing over substrate surface may be harmful to material deposition rate, thickness, step coverage rate, deposition homogeneity and other deposition parameter.
In the section processes chamber, handling gas can evaporate, and is delivered to the processing region of chamber by gas distributor, and reaction and deposition of desired material.Gas distributor can comprise a gas access passage, and the gas access passage will be handled gas delivery and enter the sprinkler head assembly, and this assembly has the baffler that is arranged in the middle of the panel.Handling gas can mix before the processing region that imports chamber.Known gas delivery system may not have sufficient device and will handle gas evaporation, mixes and/or be delivered in the processing region of chamber.The conveying of uncontrollable processing gas may cause adverse influence for the gross mass of technology homogeneity, module production and treatment substrate in the single substrate and between the substrate.
Therefore, in this skill, need Improvement type chamber part in a kind of chemical vapor deposition chamber.
Summary of the invention
Embodiments of the invention relate generally to be used for the chamber part that chemical vapor deposition (CVD) is used.Embodiments of the invention relate generally to be used for baffler, mixing apparatus and the liquid evaporation equipment of chemical vapor deposition chamber.
In one embodiment, provide a baffler (blocker plate), this baffler comprises an annular plate, this annular plate has an interior section, this interior section has one first thickness, and this annular plate has a hole patterns, and this hole patterns comprises: a middle body; One first pattern part, altogether in heart be arranged on this middle body around, and comprise several first holes, those first holes have one first pore quantity; One second pattern part, altogether in heart be arranged on this first pattern part around, and comprise several second holes, those second holes have one second pore quantity, and this second pore quantity is greater than this first pore quantity; One peripheral part, altogether in heart be arranged on this second pattern part around.This annular plate has more an exterior section, and this exterior section comprises high (raised) that rises of one on the periphery that is arranged on this annular plate core altogether, and has one second thickness, and this second thickness is greater than this first thickness of this middle body.
In another embodiment, a baffler that comprises an annular plate is provided, this annular plate has an interior section, this interior section has one first thickness, and this annular plate has a hole patterns that comprises a middle body, this middle body comprises several holes, wherein those holes comprise several common center ring-type row, and ring-type row in each those common center have one accelerates between the hole of 30～150 holes, and each ring has a deviation angle of 60 °～270 ° for a center line of this middle body.This hole patterns also comprises a peripheral part, altogether in heart be arranged on this middle body around.This annular plate also comprises an exterior section, and this exterior section comprises the high common core that rises of one on the periphery that is arranged on this annular plate, and has one second thickness, and this second thickness is greater than this first thickness of this interior section.
In another embodiment, provide a baffler.This baffler comprises an annular plate, and annular plate has an interior section, and this interior section has one first thickness, and this annular plate has a hole patterns, and this hole patterns comprises: a middle body; One pattern part, altogether heart be arranged on this middle body around, and comprise several holes, wherein those holes comprise several common center ring-type row, and ring-type row in each those common center have a hole between 16～96 holes and change quantity, and each ring has a deviation angle of 7 °～245 ° for a center line of this middle body; One peripheral part, altogether in heart be arranged on this middle body around.This annular plate comprises an exterior section again, and this exterior section comprises the high common core that rises of one on the periphery that is arranged on this annular plate, and has one second thickness, and this second thickness is greater than this first thickness of this interior section.
In another embodiment, provide a kind of mixing apparatus.This mixing apparatus comprises: a cylindric first, by an entrance extension; One second portion is coupled to this first; And a third part, be coupled to this second portion, and extend to an outlet.Wherein this first has a cone shape, and is tapered towards this second portion by this inlet.This third part extends to this outlet by this second portion.
In another embodiment, provide a mixing apparatus, this mixing apparatus comprises: a first, by an entrance extension; One cylindric second portion is coupled to this first; An and third part, be coupled to this second portion, and extend to an outlet, this third part comprises an expansion that is coupled to this second portion, an and circular cylinder shaped portion that is coupled to this expansion and this outlet, this first has a cone shape, and is tapered towards this second portion by this inlet.
In another embodiment, provide a liquid evaporation equipment.This liquid evaporation equipment comprises: an evaporator; One fluid-mixing pipeline is coupled to this evaporator; One first fluid shut-off valve (shutoff valve) is arranged on the top section of this evaporator, and is coupled to this fluid-mixing pipeline; One first fluid pipeline is coupled to this fluid-mixing pipeline by this first fluid shut-off valve; One second fluid circuit is coupled to this fluid-mixing pipeline; And an evaporator shut-off valve, be provided with and be that fluid is communicated with this evaporator.
In another embodiment, provide a baffler, this baffler comprises the annular plate with several holes.
In another embodiment, provide a kind of mixer apparatus.This mixer apparatus comprises: a cylindric first, by an entrance extension; One second portion is coupled to this first; And a third part, be coupled to this second portion, and extend to an outlet.Wherein this first has a cone shape, and is tapered towards this second portion by this inlet.This third part extends to this outlet by this second portion.
In another embodiment, provide a liquid evaporator equipment.This liquid evaporator equipment comprises: an evaporator; One evaporator shut-off valve is provided with and is that fluid is communicated with this evaporator; One fluid-mixing pipeline is coupled to this evaporator; One first fluid pipeline is coupled to the first fluid shut-off valve on the top section that is arranged on this evaporator; Wherein this fluid-mixing pipeline is coupled to the first fluid shut-off valve, and second fluid circuit is coupled to this fluid-mixing pipeline.
Description of drawings
For allowing above-mentioned feature of the present invention become apparent, can cooperate the reference example explanation, its part is to illustrate as the accompanying drawing formula.It is noted that though appended graphic exposure specific embodiment of the present invention, it is not in order to limiting spirit of the present invention and scope, anyly have the knack of this skill person, when being used for a variety of modifications and variations equivalent embodiment.
Fig. 1 is the summary view according to the deposition chambers of embodiment described herein;
Fig. 2 A is the summary view of an embodiment of baffler described herein;
Fig. 2 B is along the obtained cross section view of line 2B according to the baffler of Fig. 2 A of one embodiment of the invention;
Fig. 2 C is the summary view of another embodiment of baffler described herein;
Fig. 2 D is the summary view of another embodiment of baffler described herein;
Fig. 3 A is the summary view of another embodiment of baffler described herein;
Fig. 3 B is along the obtained cross section view of line 3B according to the baffler of Fig. 3 A of one embodiment of the invention;
Fig. 4 A is the cross section view according to the funnel-form mixing tube of embodiment described herein;
Fig. 4 B is arranged on the cross section view of an embodiment of the funnel-form mixing tube in the distribution of gas assembly;
Fig. 4 C is the three-dimensional view of an embodiment of the funnel-form mixing tube of Fig. 4 A;
Fig. 5 A and 5B are summary top and the end views according to the liquid evaporator of embodiment described herein;
Fig. 5 C is arranged on the three-dimensional view of an embodiment of the evaporator in the liquid evaporator;
Fig. 5 D is the summary end view of an embodiment of evaporator; And
Fig. 6 is graphic according to the summary of the electronic system of the liquid evaporator of an embodiment described herein.
For ease of understanding, graphic in identical element numbers represent identical assembly.The assembly that a certain embodiment adopts ought not need special detailed description the in detail and may be used on other embodiment.
Embodiment
Embodiments of the invention provide the equipment that is used for the chemical vapor deposition (CVD) treatment chamber.The deposition chambers that can benefit from Apparatus and method for described herein comprises and can be used for deposition oxide (for example carbon doped silicon oxide), contains silicon fiml and other dielectric material (comprising: advanced figure film; Advanced patterned film; APF) chamber.The example of deposition chambers is available from the Applied Materials of Santa Clara, California (Applied Materials, Producer Inc.)
Chambers series.Producer
Chamber has two separating treatment zones to be used for the CVD chamber of deposit carbon doped silicon oxide and other material.Chamber with two separating treatment zones is to be described in United States Patent (USP) the 5th, 855, and No. 681, it is to incorporate this paper into as reference to draw the mode of putting.Producer
Chamber has one for the attached port of remote plasma source.
Among the described herein embodiment, remote plasma source is to be attached to Producer
Chamber, by this, remote plasma source can with Producer
Two separating treatment zones of Chamber connect.Yet the technology that the below is described for example also can be used and be connected to Producer by T type pipeline (tee line)
Two remote plasma source of each processing region of Chamber, and adjust flow rate in view of the above and carry out.
Fig. 1 is the summary diagrammatic sketch of chamber 100, and this chamber 100 has two processing regions 118,120 that are connected to two remote plasma source 1100.One remote plasma source 1100 is to be connected to processing region 118, and another remote plasma source 1100 is to be connected to processing region 120.Heater base 128 is to be arranged on movably in each processing region 118,120 by a bar 126, and bar 126 is the bottoms that extend through chamber body 112, and bar 126 is connected to drive system 103 in the bottom of chamber body 112.Each processing region 118,120 comprises a distribution of gas assembly, and this assembly comprises that one is arranged in the gas box (gas box) 142 of Pit cover 104, so that gas delivery is entered in the processing region 118,120 by baffler (blocker plate) 102.The distribution of gas assembly 108 of each processing region also comprises a gas access passage 140, and this gas access passage 140 is that gas delivery is entered gas box 142.Cooling duct 152 is to be formed in the substrate plate 148 of each distribution of gas assembly 108, with this plate of cooling in operating process.Inlet 155 carries coolant fluid (for example water) to enter in the cooling duct 152, and cooling duct 152 is to be connected to each other by coolant line 157.Cooling fluid leaves passage via coolant outlet 159.Perhaps, cooling fluid is that circulation is through manifold.Handling gas can comprise and be positioned at the long-range evaporating liquid that liquid evaporator provided of gas box 142.Mixing apparatus can be arranged in the distribution of gas assembly.
Fig. 2 A is the baffler according to an embodiment described herein.Fig. 2 B is the cross section view along the line 2B gained of Fig. 2 A.Baffler 200 comprises annular plate 202.Annular plate comprises around the exterior section of interior section (middle body) 206 (ring-type dash forward lip) 204.Several holes 201 are to form at least a portion of passing interior section, and can form the pattern shown in Fig. 2 A.Exterior section 204 can have the prominent lip of ring-type, and this prominent lip is thicker or protrude in the top, plane of annular plate 202.In an embodiment of annular plate, the thickness of annular plate is 0.05～0.25 inch, for example about 0.15 inch.In one example, the prominent lip of ring-type is also wanted thick about 0.1 inch than the interior section of annular plate 202.The width of the prominent lip of ring-type is 0.5～1 inch, for example about 0.87 inch.One or more bolt hole 214 can form and pass high (raised) that rises core altogether.
Fig. 2 A illustrates the top summary view of an embodiment of baffler 200, and interior section comprises middle body (interior section) 207, pattern part 203 and peripheral part (exterior section) 206.Middle body and peripheral part can be the solid section of annular plate, for example do not have hole.
Several common center annular row can be about 10～about 50 center annular row altogether, for example 30 center annular row altogether.Each person of several common center annular row comprises 30～150 holes, for example about 36～about 123 holes, and the hole of each common center annular row has 0 °～270 ° of deviation angles by the center line of the interior section of annular plate, for example is 63 °～266 °.The quantity of hole and deviation angle can stretch along with the center radiation shape by annular plate and increase.For instance, each row can increase by 2～4 holes, and has 5 °～10 ° of the deviation angles of increase, for example 7 °.Several holes can comprise that hole areal concentration (area density) is about 25 hole (holes/inch per square inch
2)～about 50 hole/inches
2, for example be about 37.6 hole/inches
2Altogether the hole of center annular row also can be described as and has hole circumference density (circumference density) (hole/circumferential inch) and be about 4 hole/inches～about 5 hole/inches.Central authorities are zero (0) with the hole circumference density of peripheral part.
In an example of baffler, pattern part comprises 30 center annular row altogether, wherein the common center annular row in bosom comprise 36 holes (deviation angle is about 63 °), the quantity of each common center annular row increases by 2～4 holes (with 7 ° of the deviation angles that increase) by the preceding row of center annular altogether, and have 123 holes outside center annular row altogether of (about 266 ° of deviation angle) of arriving.For instance, from the common center annular row in bosom at first 7 altogether each person of center annular row increase by 4 holes by the previous row of center annular altogether, ensuing 15 altogether each person of center annular row increase by 3 holes by the previous row of center annular altogether, and from the common center annular row in bosom last 7 altogether each person of center annular row increase by 2 holes by the previous row of center annular altogether.
Fig. 2 C illustrates the top summary diagrammatic sketch of second embodiment of baffler 200, and interior section comprises pattern part (interior section) 203 and peripheral part (exterior section) 206.Pattern part can comprise several holes 201.Several holes can comprise 2 or several spaced radials of a plurality of holes array of center annular row altogether.In each common center annular row, hole is for equidistant each other.Several common center annular row can be about 10～about 50 center annular row altogether, for example 30 center annular row altogether.Each of several common center annular row can comprise 2～150 holes, for example about 4～about 123 holes, and the hole of each common center annular row has 0 °～270 ° of deviation angles by the center line of the interior section of annular plate, for example between 36 °～266 °.The quantity of hole can stretch along with the center radiation shape by annular plate and increase.Each hole has cylindric in annular plate.In one embodiment, hole 201 diameters can be about 0.0125 inch～about 0.1 inch, for example about 0.025 inch, and hole 201 is that the passage of annular plate to provide fluid to pass through is provided.Peripheral part can be the solid section of annular plate, does not for example have hole.
Fig. 2 D illustrates the top summary diagrammatic sketch of another embodiment of baffler 250.Baffler 250 comprises annular plate 252.Annular plate comprises the exterior section 254 around interior section 256.Interior section comprises middle body 257, pattern part 253 and peripheral part 256.Middle body and peripheral part can be the solid section of annular plate, for example do not have hole.Exterior section 254 can have the prominent lip of ring-type, and this prominent lip is thicker or protrude in the top, plane of annular plate 252.In an embodiment of annular plate, the thickness of annular plate is 0.05～0.25 inch, for example about 0.15 inch.In one example, the prominent lip of ring-type is also wanted thick about 0.1 inch than the interior section of annular plate 202.The width of the prominent lip of ring-type is 0.5～1 inch, for example about 0.87 inch.One or more bolt hole can form and pass the high common core that rises.
Several common center annular row can be about 15～about 50 center annular row altogether, for example 35 center annular row altogether.Each person of several common center annular row comprises 10～100 holes, for example about 16～about 96 holes, and the hole of each common center annular row has 0 °～270 ° of deviation angles by the center line of the interior section of annular plate, for example is 7 °～245 °.The quantity of hole can stretch along with the center radiation shape by annular plate and change.For instance, each row can increase or reduce by 0～7 hole.The quantity of hole and deviation angle can stretch along with the center radiation shape by annular plate and increase, and for instance, the deviation angle that each row has increase is 5 °～10 °, for example 7 °.
Several holes can be listed as the hole areal concentration that is had minimizing by the radial stretching, extension of middle body along with being total to center annular.The hole of center annular row also can be described as and has hole circumference density (hole/circumference) for about 10 hole/inches～about 2 hole/inches, for example between 9.1 hole/inches～about 2.9 hole/inches altogether.Central authorities are zero (0) with the hole circumference density of peripheral part.The hole circumference density of each common center annular row can be around pattern and reduce, and for example is the minimizing situation between about 0.04 hole/inch～about 0.38 hole/inch between each common center annular row.
In an example of baffler, pattern part comprises 35 center annular row altogether, wherein the common center annular row in bosom comprise 16 holes (deviation angle is about 7 °), the quantity of each common center annular row increases or reduces 0～7 hole (with 7 ° of the deviation angles that increase) by the preceding row of center annular altogether, and have 85 holes outside center annular row altogether of (about 245 ° of deviation angle) of arriving.For instance, from the common center annular row in bosom at first 7 altogether each person of center annular row increase by 5～7 holes by the previous row of center annular altogether, ensuing 13 each persons who is total to the center annular row increase by 1～4 hole by the previous row of center annular altogether, ensuing 5 each persons who is total to the center annular row increase by 1 hole by the previous row of center annular altogether, or has identical hole number with previous altogether center annular row, and from the common center annular row in bosom last 9 altogether each of center annular row or have identical pore quantity by the previous row of center annular altogether and increase by 1～2 hole with the previous row of center annular altogether.
Fig. 3 A is the summary view of second embodiment of baffler described herein.Fig. 3 B is the cross section view along the line 3B gained of the baffler of Fig. 3 A.Baffler 300 comprises annular plate 302.Annular plate comprises an exterior section (ring-type dash forward lip) 304 and one interior section 306, and interior section 306 has several holes 301 and forms and pass wherein.Annular plate has a diameter that is suitable for being used in the gas distributor, for example about 8～about 16 inches, for example is about 12.4 inches again.
In an embodiment of first pattern part 310, several first holes 301 in first pattern part can comprise two or several spaced radials of a plurality of holes first array of center annular row altogether.Several common center annular row can be about 1～about 10 center annular row altogether, for example 6 center annular row altogether.But center annular row each interval is about 0.1 inch～about 0.5 inch altogether, and for example each interval is about 0.25 inch, and more can be for equidistant each other.Hole in each common center annular row can be for equidistant each other.The common center annular row of each of several common center annular row can comprise 2～20 holes, for example about 4～about 10 holes, and the hole of each common center annular row has 0 °～45 ° of deviation angles by the center line of the interior section of annular plate.The quantity of hole can increase along with each common center annular is listed as by the radial stretching, extension of middle body.
Several first holes can comprise the first hole density.As described here, density comprises hole areal concentration and/or hole circumference density.The first hole areal concentration is about 5 hole (holes/inch per square inch
2)～about 20 hole/inches
2, for example be about 11.6 hole/inches
2The hole of center annular row also can be described as and has hole circumference density (hole/circumference) for about 0.9 hole/inch～about 1.4 hole/inches altogether, for example is about 0.97 hole/inch～about 1.27 hole/inches.Central authorities are zero (0) hole/inch with the hole circumference density of peripheral part.
In an example of baffler, first pattern part comprises 6 center annular row altogether, the common center annular row in bosom comprise 4 holes, and the pore quantity of each common center annular row of first pattern part arrives outside center annular row (having 10 holes) altogether by the previous row of center annular altogether and increases by 1～2 hole.The deviation angle of each row changes between 0 °～about 30 °.
The diameter of the hole 301 of first pattern part and second pattern part is about 0.0125 inch～about 0.1 inch, for example is about 0.025 inch, and the passage of annular plate to provide fluid to pass through is provided.Each hole has cylindric in annular plate.
In an embodiment of baffler 300, several second holes 301 in second pattern part can comprise two or several spaced radials of a plurality of holes second array of center annular row altogether.Several common center annular row can be about 10～about 40 center annular row altogether, for example 32 center annular row altogether.But center annular row each interval is about 0.1 inch～about 0.5 inch altogether, and for example each interval is about 0.25 inch, and more can be for equidistant each other.Hole in each common center annular row can be for equidistant each other.The common center annular row of each of several common center annular row can comprise 15～125 holes, for example about 44～about 119 holes, and the hole of each common center annular row has 0 °～252 ° of deviation angles by the center line of the interior section of annular plate.The quantity of hole can increase along with each common center annular is listed as by the radial stretching, extension of first pattern part.
Therefore, several second holes can comprise the second hole areal concentration, and it is greater than the first hole areal concentration.The second hole areal concentration is greater than about 20 hole (holes/inch per square inch
2) (for example about 25 hole/inches
2)～about 50 hole/inches
2, for example be about 37.4 hole/inches
2The hole of center annular row also can be described as and has hole circumference density (hole/circumference) for about 4 hole/inches～about 5.5 hole/inches altogether, for example is about 4.18 hole/inches～about 4.98 hole/inches.Central authorities are zero (0) with the hole circumference density of peripheral part.
In an example of baffler, second pattern part comprises 26 center annular row altogether, the common center annular row in bosom comprise 44 holes (deviation angle is about 77 °), and the pore quantity of each common center annular row is increased by 2～4 holes (with 7 ° of the deviation angles that increase) by the preceding row of center annular altogether, and have 119 holes outside center annular row altogether of (about 252 ° of deviation angle) of arriving.For instance, from the common center annular row in the bosom of second pattern part at first 5 altogether each person of center annular row increase by 4 holes by the previous row of center annular altogether, ensuing 15 altogether each person of center annular row increase by 3 holes by the previous row of center annular altogether, and from the common center annular row in bosom last 5 altogether each person of center annular row increase by 2 holes by the previous row of center annular altogether.
See that with another visual field several second holes can comprise the radial pattern of several row, and each row comprises two or two or a plurality of continuous arc fragment of a plurality of holes.Moreover each row more can comprise by two or a plurality of arc fragment 0～3 extra arc fragment of extending.Several second holes comprise 30～150 row, for example about 44 row.
The design of salty letter baffler 300 is prevention fluids the flowing of middle body 308, and the fluid that is limited in first pattern part 310 flows.This kind design believes that for the technology of using steam be necessary, because steam technology is to responsive to temperature.With regard to itself, baffler 300 designs are being done the time spent with steam, can make the thermal effect of heater minimize.Baffler 200 can be used in the above-mentioned chamber 100, and as baffler 102.Baffler 300 also can be used in the above-mentioned chamber 100, and as baffler 102.
Fig. 4 A is mixing apparatus 400 (the funnel-form mixing tube for example according to embodiment described herein; Funnel mixing tube) cross section view.Mixing apparatus 400 can be arranged in the distribution of gas assembly, distribution of gas assembly 108 for example shown in Figure 1.
Mixing apparatus 400 can have essence cylindrical body 401.In an example of mixing apparatus 400, main body has cylindric in annular plate, and external diameter is about 0.1 inch～about 8 inches (for example 0.8 inches), highly be about 0.1 inch～about 4 inches (for example about 1.7 inches), to allow more consistent installation of mix manifold containing and good concentricity (concentricity).
In an embodiment of mixing apparatus 400, the interior shape of mixing apparatus 400 or internal structure have the shape of hourglass, and its minimum limit internal diameter be between about 0.1～about 1, to allow with laboratory tests based on flow simulating to repeat and consistent gas mixes.Yet the size of the mixing apparatus 400 of part can and be used for the other factors of optimization usefulness and changes based on purposes, design necessity, flow rate demand.
The internal structure 409 of cylindrical body 401 comprises a continuous fluid passage part, this part comprises first 402, second portion 404 (throat) and the third part 406 (diffuser) of being extended by inlet 403 (or nozzles), and extends to outlet 405.In one embodiment, cylindrical body has columned first, second and third part, and the diameter of second portion is less than first, and the diameter of third part is greater than second portion, and the diameter of third part is more than or equal to first.The diameter of inlet 403 and outlet 405 is greater than first 402, second portion 404 and third part 406.
In an embodiment of cylindrical body, first 402 has cone shape.First 402 with cone shape can be tapered towards second portion 404 by inlet 403.In an embodiment of cylindrical body, third part is to be extended to outlet 405 by second portion.
In an embodiment of mixing apparatus 400, the opening of first is about 0.56 inch, first 402 is tapered to the about 0.24 inch second portion of diameter 404, and second portion 404 then extends to third part 406, and the diameter of this third part 406 is to approach about 0.64 inch outlet.Second portion can more comprise a gradual change (transition) part 407, to provide by the seamless gradual change of second portion to third part.Gradual change part 407 has concave surface, and for example having radius is about 0.05 inch concave surface, and it is the convex surface that is coupled to the expansion of third part.Expansion has domed profiles, for example recessed profile.Domed profiles can have the radius of curvature by the center line of third part, for example about 0.318 inch.Perhaps, expansion can have cone shape.
The height of first, second and third part can change according to the demand of chamber, and in one example, the height of first is about 0.63 inch, and the height of second portion is about 0.3 inch, and the height of third part is about 0.75 inch.
Salty credit is easily to make with the funnel-form Mixed Design of dwindling rotation gas compared to known funnel-form mixing tube.The funnel-form Mixed Design can reduce because the technology variation due to mixed hardware manufacturing and the device tolerances, because the output left and right sides mismatch (yield left and right mismatch) (output reduces the L/R mismatch) of the reduction that the conductibility variation in the complex angles hole design of known chamber imbedding piece (insert) is caused.
The design of funnel-form mixing tube can be through modifying to obtain the mixed characteristic of expectation.The concentricity that prominent lip design can be used for promoting installation.The radius of exit region can be used for promoting flow regime (flow regime).Indivedual sizes of funnel-form mixing tube can be at the size layouts of the shape of the angle of the diameter of the height of cylinder, cylinder, inlet and discharge state and are changed.The size at the top of parts changes unsteadiness and the concentricity that can be used for helping institute's installing component.
Fig. 4 B is the cross section view that is arranged on an embodiment of the funnel-form mixing tube in the distribution of gas assembly.Distribution of gas assembly 410 can be the disclosed distribution of gas assembly 108 of Fig. 1.Mixing apparatus 400 can be arranged in the distribution of gas assembly 410, and by enter the mouth 403 with cylindrical body first 402 be coupled to gas inlet area 415.Gas inlet area 415 can be by conduit 450 with evaporating liquid pipeline 430 (for example from the liquid evaporator shown in the below 500) and fluid is coupled to the processing gas source, for example the mixture of tetraethoxysilane (TEOS) and oxygen or ozone gas.The evaporating liquid pipeline can encapsulate by heating pipe road 440, being provided at the evaporating liquid under the temperature, and makes the condensation in each pipeline minimize.The evaporating liquid pipeline can be by the deployment catheter 420 in gas inlet area 415 the place aheads.Gas and evaporating liquid can then be delivered to the processing region of treatment chamber 480.
The third part of mixing apparatus 400 is to be communicated with for fluid with the processing region 470 of treatment chamber.Plasma gas (for example from the remote plasma source that comprises clean air) can flow into the processing region 470 of chamber by conduit 460 around mixing apparatus 400.
Fig. 4 C is the isogonism cross section view of an embodiment of the funnel-form mixing tube of Fig. 4 A, and it shows first 402, second portion 404 and third part 406.
Fig. 5 A and 5B are top and the end view according to the liquid evaporator of an embodiment described herein.Liquid evaporator 500 is included in a series of ports on the side 501.Evaporating liquid then is delivered to chamber through outlet 512.Port comprises power portal 502, signal connector 504, first fluid pipeline inlet 506 (for example water inlets), three-fluid inlet 508 (for example air intakes) and second fluid intake 510 (for example nitrogen inlet).Evaporating liquid then is delivered to chamber by exporting 512.Liquid evaporator 500 with employed liquid in deposition or the treatment process (for example: evaporation water) can be used for.
Liquid evaporator can carry out under the operating environment temperature (ambient temperature) of the operation atmospheric pressure value (operating air pressure pneumatic value) of the carrier gas maximum flow rates of the nebulizer gas pressure of the operating hydraulic pressure power of 0.2～0.3MPa, 0.2～0.3MPa, 20SLM, 0.4～0.6MPa and 15 ℃～35 ℃.The temperature that is used to operate evaporator is set and can be 110 ℃.
Fig. 5 C is the three-dimensional view that is arranged on an embodiment of the evaporator in the liquid evaporator 500.First fluid pipeline 505 (for example water lines of originating from water) is to be provided with to pass first fluid pipeline inlet (water inlet) 506, and is coupled to shut-off valve 507.Shown shut-off valve 507 is arranged on the top section of evaporator 503, can be other any configuration mode with evaporator optionally perhaps.Shut-off valve 507 is to be coupled to evaporator 503 by fluid-mixing pipeline 509.
Second fluid circuit 511 (for example nitrogen pipeline of originating from nitrogen) is to be provided with to pass second fluid intake (nitrogen inlet) 510, and is coupled to fluid-mixing pipeline 509 by pipe joint 513, to mix with water in the preceding elder generation that enters evaporator 503.The pipeline portions 515 that is arranged between shut-off valve 507 and the pipe joint 513 is to have minimized length, for example 1 inch～2 inches, so that the water volume of pipe joint 513 and evaporator 503 upstreams minimizes.Yet the length of pipeline portions 515 can be based on the setting of the flow line of the liquid volume of the design and/or the size of evaporator, the pipeline of flowing through and use and is changed.The length that salty letter reduces water lines part 515 can be prevented the water Evaporation Phenomenon do not expected.The water evaporation can produce the technology unsteadiness in evaporator, and this unsteadiness can make the time that reaches the mobile of stable state and technology variation increase.
Evaporator shut-off valve 514 is arranged on the downstream of evaporator 503, and is positioned on the export pipeline 517 by evaporator outlet 512.The evaporator shut-off valve is that restriction or prevention evaporation water flow to treatment chamber.Shut-off valve 514 is preferable settings and as far as possible near evaporator, for example 0.1 inch～1 inch, and with when shut-off valve 514 is positioned at off-position and make the evaporation water flow volume in evaporator 503 downstreams minimize.In an embodiment of evaporator, the evaporator shut-off valve is directly to be coupled to outlet 512.Yet, can be based on the design of evaporator and evaporator shut-off valve and/or size and the distance that changes.
Fig. 5 D is the summary end view of an embodiment of evaporator 503, evaporator 503 has provides first fluid pipeline 505 and second fluid circuit 511 of nitrogen pipeline of fluid to the water lines of evaporator 503, the export pipeline 517 of evaporating liquid to chamber is provided, and the evaporator shut-off valve 514 that flows to treatment chamber in the control export pipeline 517.
Thermal conditioning equipment 520a-520c also is coupled to the temperature of evaporator with the control evaporation technology.Heat controller 520a is coupled to the temperature of chamber with monitoring and change evaporation technology.The heat exchanger device 520b of thermal conditioning equipment is coupled to evaporator, to allow hot flash-pot dissipation.Heat controller is to be coupled to external system by a signal connector 504.Evaporator is to be coupled to power source by power portal 502.
Fig. 6 is graphic according to the summary of the electronic system of the liquid evaporator of an embodiment described herein.
Though only the present invention with the preferred embodiment explanation as above, right its is not in order to limiting the present invention, anyly has the knack of this technical staff, change of being done and retouching without departing from the spirit and scope of the present invention, must belong to technology category of the present invention, and category of the present invention is defined by claim.
Claims (15)
1. a baffler (blocker plate) comprising:
Annular plate has interior section, and this interior section has first thickness, and this annular plate has hole patterns, and this hole patterns comprises:
Middle body;
First pattern part, altogether in heart be arranged on this middle body around, and comprise several first holes, those first holes have first pore quantity;
Second pattern part, altogether in heart be arranged on this first pattern part around, and comprise several second holes, those second holes have second pore quantity, and this second pore quantity is greater than this first pore quantity;
Peripheral part, altogether in heart be arranged on this second pattern part around; And
Exterior section comprises that (raised) that the height on the periphery that is arranged on this annular plate rises is total to core, and has second thickness that this second thickness is greater than this first thickness of this middle body.
2. baffler as claimed in claim 1, wherein those first holes comprise two or several first center annular row altogether of a plurality of holes, those second holes comprise two or several second center annular row altogether of a plurality of holes.
3. baffler as claimed in claim 2, wherein those first common center annular row comprise that 2～about 10 are total to the center annular row, and each common center annular row have 2～10 holes, and a hole deviation angle of each ring is by a center line of this interior section of this annular plate and be about 0 °～about 45 °, those second common center annular row comprise 10～40 center annular row altogether, and each common center annular row have 44～119 holes, and a hole deviation angle of each ring is to be about 77 °～about 252 ° by a center line of this interior section of this annular plate.
4. baffler as claimed in claim 1, wherein each hole of those first holes and those second holes is cylindric.
5. baffler comprises:
Annular plate has interior section, and this interior section has first thickness, and this annular plate has hole patterns, and this hole patterns comprises:
Middle body;
Pattern part, altogether heart be arranged on this middle body around, and comprise several holes, wherein those holes comprise several common center ring-type row, and ring-type row in each those common center have one between the accelerating of 30～150 holes, and each ring has a deviation angle of 60 °～270 ° for a center line of this middle body;
Peripheral part, altogether in heart be arranged on this middle body around; And
Exterior section comprises the common core that the height on the periphery that is arranged on this annular plate rises, and has second thickness, and this second thickness is greater than this first thickness of this interior section.
6. mixing apparatus comprises:
Main body defines internal structure, and this internal structure is suitable to handle a fluid, and this internal structure comprises:
First is by entrance extension;
Cylindric second portion is coupled to this first; And
Third part, be coupled to this second portion, and extend to an outlet, this third part comprises the expansion that is coupled to this second portion, and the circular cylinder shaped portion that is coupled to this expansion and this outlet, this first has cone shape, and is tapered towards this second portion by this inlet.
7. mixing apparatus as claimed in claim 6, wherein this mixing apparatus is arranged in the distribution of gas assembly, and is coupled to gas inlet area by this inlet, and this outlet is that fluid is communicated with the processing volume of treatment chamber.
8. mixing apparatus as claimed in claim 6, wherein this expansion comprises the domed profiles that is extended to this circular cylinder shaped portion of this third part by this second portion.
9. mixing apparatus as claimed in claim 6, wherein the diameter of this second portion is less than this first, and this third part has the circular cylinder shaped portion diameter greater than this second portion.
10. liquid evaporation equipment comprises:
Evaporator;
The fluid-mixing pipeline is coupled to this evaporator;
First fluid shut-off valve (shutoff valve) is arranged on the top section of this evaporator, and is coupled to this fluid-mixing pipeline;
The first fluid pipeline is coupled to this fluid-mixing pipeline by this first fluid shut-off valve;
Second fluid circuit is coupled to this fluid-mixing pipeline; And
The evaporator shut-off valve is provided with and is that fluid is communicated with this evaporator.
11. liquid evaporation equipment as claimed in claim 10, wherein this fluid-mixing pipeline, this first fluid pipeline and this second fluid circuit together are coupled in a pipe joint, and this pipe joint is arranged on the upstream of this evaporator.
12. liquid evaporation equipment as claimed in claim 10, wherein this first fluid shut-off valve is arranged on apart from 1 inch～2 inches places of this pipe joint, and this evaporator shut-off valve is arranged on the downstream part of this evaporator, and with about 0.1 inch～about 1 inch of this evaporator distance.
13. liquid evaporation equipment as claimed in claim 10, wherein this evaporator shut-off valve directly is coupled to this evaporator.
14. liquid evaporation equipment as claimed in claim 10 more comprises the heat controller and the heat exchanger device that are coupled to this evaporator.
15. a baffler comprises:
Annular plate has interior section, and this interior section has first thickness, and this annular plate has hole patterns, and this hole patterns comprises:
Middle body;
Pattern part, altogether heart be arranged on this middle body around, and comprise several holes, wherein those holes comprise several common center ring-type row, and the hole that ring-type row in each those common center have between 16～96 holes changes quantity, and each ring has 7 °～245 ° deviation angle for the center line of this middle body;
Peripheral part, altogether in heart be arranged on this middle body around; And
Exterior section comprises the common core that the height on the periphery that is arranged on this annular plate rises, and has second thickness, and this second thickness is greater than this first thickness of this interior section.
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| PCT/US2009/050282 WO2010006279A2 (en) | 2008-07-11 | 2009-07-10 | Chamber components for cvd applications |
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| JP2003347289A (en) * | 2002-05-24 | 2003-12-05 | Stec Inc | Vaporizer |
| US6935513B2 (en) * | 2002-12-18 | 2005-08-30 | Molecular Separation Technologies, Llc | Method and apparatus for mixture separation |
| US7311270B2 (en) * | 2003-12-23 | 2007-12-25 | M-I L.L.C. | Device and methodology for improved mixing of liquids and solids |
| US7622005B2 (en) * | 2004-05-26 | 2009-11-24 | Applied Materials, Inc. | Uniformity control for low flow process and chamber to chamber matching |
| JP5157101B2 (en) * | 2006-08-04 | 2013-03-06 | 東京エレクトロン株式会社 | Gas supply apparatus and substrate processing apparatus |
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2009
- 2009-07-10 TW TW098123462A patent/TW201015654A/en unknown
- 2009-07-10 JP JP2011517657A patent/JP2011527840A/en active Pending
- 2009-07-10 WO PCT/US2009/050282 patent/WO2010006279A2/en active Application Filing
- 2009-07-10 US US12/501,195 patent/US20100006032A1/en not_active Abandoned
- 2009-07-10 KR KR1020117003315A patent/KR20110036933A/en not_active Application Discontinuation
- 2009-07-10 CN CN200980128082.5A patent/CN102089863B/en active Active
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| US6050506A (en) * | 1998-02-13 | 2000-04-18 | Applied Materials, Inc. | Pattern of apertures in a showerhead for chemical vapor deposition |
| US20070022952A1 (en) * | 2005-07-27 | 2007-02-01 | Ritchie Alan A | Unique passivation technique for a cvd blocker plate to prevent particle formation |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107075671A (en) * | 2014-10-03 | 2017-08-18 | 应用材料公司 | The gas flow profile regulation control of covering in plasma CVD film |
| US10373822B2 (en) | 2014-10-03 | 2019-08-06 | Applied Materials, Inc. | Gas flow profile modulated control of overlay in plasma CVD films |
| TWI670392B (en) * | 2014-10-03 | 2019-09-01 | 美商應用材料股份有限公司 | Method of modulating local stress and overlay error of patterning film(s) and chamber for depositing the same |
| CN107075671B (en) * | 2014-10-03 | 2019-09-13 | 应用材料公司 | The gas flow profile of covering adjusts control in plasma CVD film |
| TWI705154B (en) * | 2014-10-03 | 2020-09-21 | 美商應用材料股份有限公司 | Method of modulating local stress and overlay error of patterning film(s) and chamber for depositing the same |
| CN108962715A (en) * | 2017-05-17 | 2018-12-07 | 应用材料公司 | Semiconductor processing chamber for more precursor streams |
| CN108962714A (en) * | 2017-05-17 | 2018-12-07 | 应用材料公司 | Semiconductor processing chamber for improved forerunner's logistics |
| CN108962715B (en) * | 2017-05-17 | 2022-11-22 | 应用材料公司 | Semiconductor processing chamber for multiple precursor flows |
| CN108962714B (en) * | 2017-05-17 | 2022-12-02 | 应用材料公司 | Semiconductor processing chamber for improved precursor flow |
| US11915950B2 (en) | 2017-05-17 | 2024-02-27 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
Also Published As
| Publication number | Publication date |
|---|---|
| US20100006032A1 (en) | 2010-01-14 |
| TW201015654A (en) | 2010-04-16 |
| WO2010006279A2 (en) | 2010-01-14 |
| CN102089863B (en) | 2014-03-05 |
| JP2011527840A (en) | 2011-11-04 |
| KR20110036933A (en) | 2011-04-12 |
| WO2010006279A3 (en) | 2010-04-22 |
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