CN102051665B - Polishing solution for electrochemical mechanical polishing of hard disk NiP - Google Patents

Polishing solution for electrochemical mechanical polishing of hard disk NiP Download PDF

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CN102051665B
CN102051665B CN 201110000137 CN201110000137A CN102051665B CN 102051665 B CN102051665 B CN 102051665B CN 201110000137 CN201110000137 CN 201110000137 CN 201110000137 A CN201110000137 A CN 201110000137A CN 102051665 B CN102051665 B CN 102051665B
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polishing
nip
acid
potassium
mechanical polishing
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CN 201110000137
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CN102051665A (en )
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储向峰
董永平
张王兵
孙文起
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安徽工业大学
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Abstract

本发明公开一种用于硬盘NiP的电化学机械抛光的抛光液,该抛光液的组成及其质量百分比是:酸:1-10%;钾盐:0.5-1%;络合剂:0.1-2%、表面活性剂:0.01-0.1%;pH调节剂KOH:1-5%;其余为水。 The present invention discloses an electrochemical-mechanical polishing of the polishing liquid for hard NiP, composition and percentage of the mass of the polishing liquid are: acid: 1-10%; potassium: 0.5-1%; complexing agent: 0.1 2% surfactant: 0.01-0.1%; pH adjusting agent KOH: 1-5%; the rest is water. 其中酸是柠檬酸、乳酸中的一种或两种酸的混合物;钾盐是氯化钾或硝酸钾;络合剂是乙二胺或氨水或EDTA;表面活性剂是十二烷基硫酸铵、十二烷基苯磺酸铵、TX-10、NP-5、NP-9中的一种。 Wherein the acid is citric acid, lactic acid mixture of one or two acids; potassium salt is potassium chloride or potassium nitrate; complexing agent is EDTA or ammonia or ethylenediamine; surfactant is ammonium lauryl sulfate , ammonium dodecylbenzenesulfonate, TX-10, NP-5, in a 9 NP-. 用pH调节剂KOH将抛光液的pH值调节至5.0-6.0。 The pH of the polishing solution was adjusted to 5.0-6.0 using a pH adjusting agent KOH. 本发明的抛光液中不含磨料粒子,可以在低压力(0.3-0.5psi)下进行抛光,抛光后NiP基板的表面缺陷少,有可能取代目前的化学机械抛光技术对NiP基板进行抛光。 The polishing liquid of the invention does not contain abrasive particles, can be polished at a low pressure (0.3-0.5psi), less polished NiP substrate surface defects, it is possible to replace the current chemical mechanical polishing technique NiP substrate was polished.

Description

—种用于硬盘NiP的电化学机械抛光的抛光液 - kind of the polishing liquid for electrochemical mechanical polishing of hard NiP

技术领域: FIELD:

[0001] 本发明涉及电脑硬盘制造中的一种电化学机械抛光液,具体涉及一种用于硬盘NiP的电化学机械抛光的抛光液。 [0001] The present invention relates to an electrochemical mechanical polishing in the manufacture of computer hard drive fluid, particularly relates to a method for electrochemical mechanical polishing NiP hard polishing liquid.

背景技术: Background technique:

[0002]目前计算机磁头的飞行高度已降低到IOnm以下,并有进一步降低的趋势。 [0002] The computer currently head flying height has been reduced to IOnm less, and further decreased. 磁头与硬盘运行如此接近(纳米级间隙)要求磁盘表面超光滑(亚纳米级粗糙度),且无划痕、凹坑等微观缺陷。 Run so close to the magnetic head and the hard disk (nano gap) requires an ultra-smooth disk surface (sub-nanometer scale roughness), and no scratches, dents and other microscopic defects. 如果硬盘表面波度较大或存在微凸起、微凹坑时,在高速运转的过程中,会损坏磁头或磁盘表面的磁介质或导致信息读出失败。 If the hard disk or the presence of a large surface waviness slightly raised, when the micro-pit, during high-speed operation, the magnetic head or magnetic medium may damage the surface of the disk or read information results in failure. 因此在磁盘的磁介质形成之前,必须对磁盘基片进行抛光,降低基片的粗糙度,除去较大的波度、微凸起或微小凹坑等表面缺陷。 Therefore, before forming the magnetic media disk, the disk substrate must be polished, reduce the roughness of the substrate, removing the larger the waviness, the surface micro-defects or minute convex pits like. 化学机械抛光(chemical mechanical polish, CMP)技术是目前几乎唯一的可以提供全局平面化技术,也是硬盘制造中必不可少的关键技术之一。 CMP (chemical mechanical polish, CMP) technology is a key technology currently can provide almost the only global planarization technology, hard disk manufacturing also essential. 但是化学机械抛光需要在较高的压力(> Ipsi)下进行而且抛光液中一般含有抛光磨料,容易在抛光后表面产生表面缺陷。 However, the need for chemical mechanical polishing at a higher pressure (> Ipsi) and a polishing solution containing a polishing abrasive is generally prone to surface defects on the surface after polishing. 电化学机械抛光(ECMP)将电化学表面反应和机械作用结合,可以在低压力下(< Ipsi),在抛光粒子含量低(甚至不含抛光粒子)的电解质溶液(抛光液)中进行抛光。 Electrochemical mechanical polishing (an ECMP) the electrochemical and mechanical action of the surface binding reaction to be at low pressure (<Ipsi), a low content of particles in the polishing (polishing particles even free) in an electrolyte solution (polishing liquid) and polishing.

[0003] 利用电化学机械抛光对不锈钢和模具进行抛光,国内已见文献报道,但是文献中的抛光液都不能用于硬盘制造中NiP的电化学机械抛光,因为对NiP的抛光有更高的平坦度要求,而且抛光机理不同,需要不同的抛光液。 [0003] The electrochemical mechanical polishing of stainless steel and polished molds, the domestic was already reported in the literature, but the polishing liquid in the literature can not be used in hard disk manufacture electrochemical mechanical polishing an NiP, NiP polishing because of higher flatness requirements, and different polishing mechanism, different polishing liquid. 本发明的抛光液可以用于硬盘基板NiP的电化学机械抛光。 The polishing liquid of the invention may be used for electrochemical mechanical polishing of hard NiP substrate.

发明内容: [0004] 本发明所要解决的技术问题是提供一种用于电脑硬盘基板NiP抛光的电化学机械抛光液。 SUMMARY OF THE INVENTION: [0004] The present invention solves the technical problem of providing an electrochemical mechanical polishing liquid for a computer hard disk substrate for polishing NiP. 目的是降低传统化学机械抛光的抛光压力,同时降低表面粗糙度或减少表面缺陷。 Object is to reduce the conventional chemical mechanical polishing polishing pressure, while reducing the surface roughness or reduction of surface defects.

[0005] 本发明所提供的一种用于硬盘NiP的电化学机械抛光的抛光液组及其质量百分比如下: [0005] The polishing liquid mass percentage and set an electrochemical mechanical polishing an NiP hard for the present invention are as follows:

[0006] 酸:1_8% ;钾盐:0.5-1% ;络合剂:0.1-2%、表面活性剂:0.01-0.1 % ;pH调节剂KOH: 1-5% ;其余为水。 [0006] Acid: 1_8%; potassium: 0.5-1%; complexing agent: 0.1-2% surfactant: 0.01-0.1%; pH adjusting agent KOH: 1-5%; the rest is water.

[0007] 所述酸是柠檬酸或乳酸。 The [0007] acid is citric acid or lactic acid.

[0008] 所述钾盐是氯化钾或硝酸钾。 [0008] The potassium salt is potassium chloride or potassium nitrate.

[0009] 所述络合剂是乙二胺或氨水或EDTA。 [0009] The complexing agent is ethylenediamine or ammonia or EDTA.

[0010] 所述表面活性剂是十二烷基硫酸铵、十二烷基苯磺酸铵、TX-10、NP-5、NP_9中的一种。 [0010] The surfactant is ammonium lauryl sulfate, ammonium dodecylbenzenesulfonate one kind, TX-10, NP-5, NP_9 in.

[0011] 用pH调节剂KOH将抛光液的pH值调节至5.0-6.0。 [0011] The pH of the polishing solution was adjusted to 5.0-6.0 using a pH adjusting agent KOH.

[0012] 该抛光液的制备过程简单,将上述各组分按照比例进行混合、搅拌使各种物质在水中完全溶解,然后用KOH调节到所需要的pH值即可。 [0012] The preparation of the polishing solution is simple, the above components were mixed according to the proportion, stirred to completely dissolve various substances in water, then adjusted to a pH to the desired use KOH. [0013] 该抛光液可以使用传统的化学机械抛光机,仅需要在抛光垫下方加一个导电电极,抛光垫开槽,抛光时不断加抛光液,使槽内充满抛光液。 [0013] The polishing liquid may be used a conventional chemical mechanical polishing machine, need only add a conductive electrode below the polishing pad, the polishing pad grooving, continue to raise the polishing liquid during polishing, a polishing liquid of the vessel was filled. 被抛光的NiP基板与直流电源正极相连,抛光垫下方的导电电极与直流电源负极相连。 Polished NiP substrate with a DC power supply is connected to the positive electrode, the conductive polishing pad electrode under a DC power supply is connected to the negative electrode. 本抛光液可以在低于0.5psi压力下进行抛光,大大地降低了抛光压力。 The polishing liquid may be present in the polishing pressure is lower than 0.5psi, greatly reducing the polishing pressure.

具体实施方式: detailed description:

[0014] 实施例1:抛光液配方为:乳酸3% wt、氯化钾0.5% wt、乙二胺1% wt、十二烷基硫酸铵0.1% wt、其余为水,用K0H2.5% Wt将pH调至5.0。 [0014] Example 1: Formulation of polishing liquid: acid 3% wt, potassium chloride 0.5% wt, ethylene diamine 1% wt, ammonium lauryl sulfate 0.1% wt, the remainder being water, with K0H2.5% the pH was adjusted to 5.0 Wt.

[0015] 抛光电源电压为8V、抛光压力为0.3ps1、抛光液流量为100ml/min、抛光台和夹持 [0015] Polishing supply voltage is 8V, the polishing pressure was 0.3ps1, polishing solution flow rate of 100ml / min, the polishing table and the clamping

器转速均为40转/分钟。 The rotation speed was 40 revolutions / minute.

[0016] 抛光速率达到560nm/min,表面粗糙度Ra达到0.5nm。 [0016] The polishing rate up to 560nm / min, the surface roughness Ra of 0.5nm.

[0017] 实施例2:抛光液配方为:梓檬酸6% wt、硝酸钾1% wt、氨1% wt、十二烷基硫酸铵0.1% wt、其余为水,用K0H5% Wt将pH调至6.0。 [0017] Example 2: Formulation of polishing liquid: Zi citric acid 6% wt, potassium nitrate 1% wt, ammonia 1% wt, ammonium lauryl sulfate 0.1% wt, the remainder being water, with the pH K0H5% Wt adjusted to 6.0.

[0018] 抛光电源电压为8V、抛光压力为0.5pa1、抛光液流量为100ml/min、抛光台和夹持 [0018] Polishing supply voltage is 8V, the polishing pressure was 0.5pa1, polishing solution flow rate of 100ml / min, the polishing table and the clamping

器转速均为40转/分钟。 The rotation speed was 40 revolutions / minute.

[0019] 抛光速率达到520nm/min,表面粗糙度Ra达到0.4nm。 [0019] The polishing rate up to 520nm / min, the surface roughness Ra of 0.4nm.

[0020] 实施例3:抛光液配方为:乳酸4% wt、氯化钾1% wt、EDTAl% wt、十二烷基硫酸铵0.1% wt、其余为水,用2.5% Wt KOH将pH调至5.5。 [0020] Example 3: Formulation of polishing liquid: lactic acid 4% wt, potassium chloride 1% wt, EDTAl% wt, ammonium lauryl sulfate 0.1% wt, the remainder being water, with 2.5% Wt KOH to adjust the pH to 5.5.

[0021] 抛光电源电压为8V、抛光压力为0.3pa1、抛光液流量为100ml/min、抛光台和夹持器转速均为40转/分钟。 [0021] Polishing supply voltage is 8V, the polishing pressure was 0.3pa1, polishing solution flow rate of 100ml / min, the polishing table and the holder 40 are speed rev / min.

[0022] 抛光速率达到480nm/min,表面粗糙度Ra达到0.7nm。 [0022] The polishing rate up to 480nm / min, the surface roughness Ra of 0.7nm.

[0023] 实施例4:抛光液配方为:乳酸8% wt、硝酸钾0.5% wt、EDTAl% wt、十二烷基硫酸铵0.1% wt、其余为水,用6% wt KOH将pH调至5.5。 [0023] Example 4: Formulation of polishing liquid: acid 8% wt, potassium nitrate, 0.5% wt, EDTAl% wt, ammonium lauryl sulfate 0.1% wt, the remainder being water, with 6% wt KOH pH was adjusted to 5.5.

[0024] 抛光电源电压为8V、抛光压力为0.5pa1、抛光液流量为100ml/min、抛光台和夹持 [0024] Polishing supply voltage is 8V, the polishing pressure was 0.5pa1, polishing solution flow rate of 100ml / min, the polishing table and the clamping

器转速均为40转/分钟。 The rotation speed was 40 revolutions / minute.

[0025] 抛光速率达到580nm/min,表面粗糙度Ra达到0.8nm。 [0025] The polishing rate up to 580nm / min, the surface roughness Ra of 0.8nm.

Claims (1)

  1. 1.一种用于硬盘NiP的电化学机械抛光的抛光液,其特征在于所述抛光液的组成及其质量百分比如下: 酸:1-10%;钾盐:0.5-1%;络合剂:0.1_2%、表面活性剂:0.01-0.1%;ρΗ调节剂KOH:.1-5% ;其余为水;所述抛光液的pH值为5.0-6.0 ; 所述酸是柠檬酸或乳酸; 所述钾盐是氯化钾或硝酸钾; 所述络合剂是乙二胺或氨水或EDTA ; 所述表面活性剂是十二烷基硫酸铵、十二烷基苯磺酸铵、TX-10、NP-5、NP-9中的一种。 An electrochemical-mechanical polishing of the polishing liquid for hard NiP, characterized in that the mass percentage of the composition and the slurry are as follows: acid: 1-10%; potassium: 0.5-1%; complexing agent : 0.1_2% surfactant: 0.01-0.1%; ρΗ modifier KOH: .1-5%; the rest is water; the pH of the slurry is 5.0-6.0; the acid is citric acid or lactic acid; the potassium salt is potassium chloride or potassium nitrate; the complexing agent is EDTA or ammonia or ethylenediamine; the surfactant is ammonium lauryl sulfate, ammonium dodecylbenzenesulfonate, the TX- 10, NP-5, in a 9 NP-.
CN 201110000137 2011-01-04 2011-01-04 Polishing solution for electrochemical mechanical polishing of hard disk NiP CN102051665B (en)

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CN104479565A (en) * 2014-10-22 2015-04-01 上海大学 An abrasive-grain-free polishing solution composition containing a redox system for memory hard disk substrates and a preparing method thereof
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US6464855B1 (en) 2000-10-04 2002-10-15 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

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US20100059390A1 (en) * 2006-11-08 2010-03-11 Yuzhuo Li METHOD AND APARATUS FOR ELECTROCHEMICAL MECHANICAL POLISHING NiP SUBSTRATES

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US6464855B1 (en) 2000-10-04 2002-10-15 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece

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田军等.计算机硬盘NiP基板CMP记录及技术研究.《微细加工技术》.2008,(第3期),

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