CN102034923B - High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof - Google Patents

High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof Download PDF

Info

Publication number
CN102034923B
CN102034923B CN2010102727309A CN201010272730A CN102034923B CN 102034923 B CN102034923 B CN 102034923B CN 2010102727309 A CN2010102727309 A CN 2010102727309A CN 201010272730 A CN201010272730 A CN 201010272730A CN 102034923 B CN102034923 B CN 102034923B
Authority
CN
China
Prior art keywords
phenyl
epoxy resin
monomer
silanetriol
weight portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2010102727309A
Other languages
Chinese (zh)
Other versions
CN102034923A (en
Inventor
冯钠
张小扉
马春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dalian Polytechnic University
Original Assignee
Dalian Polytechnic University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dalian Polytechnic University filed Critical Dalian Polytechnic University
Priority to CN2010102727309A priority Critical patent/CN102034923B/en
Publication of CN102034923A publication Critical patent/CN102034923A/en
Application granted granted Critical
Publication of CN102034923B publication Critical patent/CN102034923B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Silicon Polymers (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The invention relates to a high wet-heat resistance transparent light-emitting diode (LED) packaging material and a preparation method thereof. The method comprises the following steps: a thermosetting epoxy resin (EP) is used as the matrix resin, the synthesized organic silicon monomer and the matrix resin are used to perform a grafting polycondensation reaction in proportion, a curing system is added in the product to stir evenly, then injection molding is performed, vacuum-pumping is performed, and a cured sample is obtained through curing, wherein the organic silicon monomer is phenyl silanetriol monomer which is obtained by hydrolyzing phenyl trichloro silicane. The synthesized CAB and EP directly react to prepare an EP-CAB copolymer. The method has the following outstanding advantages: the wet-heat resistance of EP can be effectively increased, the transparency can be improved, the reaction time can be reduced and the reaction complexity can be lowered; and the method has an important theoretical significance and application value in the practical study of the civilian industry.

Description

Transparent LED encapsulating material of high moisture-proof heat and preparation method thereof
Technical field
The invention belongs to LED encapsulating material field, be specifically related to the technology of preparing of the transparent LED encapsulating material of high moisture-proof heat.
Background technology
LED is as the novel illumination light source, no matter from energy savings still from reducing the angle of polluting, all have the potentiality of alternative traditional lighting light source, be one of approach that solves present China energy crisis.
At present, LED encapsulates with epoxy resin (EP), and the effect of LED encapsulation back resin enclosure mainly contains: 1) protection tube core etc. does not receive extraneous the erosion; 2) take different shapes and material character (mixing or do not mix color dispersing agent), play lens or diffusing lens function; 3) select for use the epoxy resin of respective indices of refraction to do transition, with the light outgoing efficient that improves tube core etc.Epoxy resin has good comprehensive mechanical properties, adhesive strength high, bonding wide, shrinkage is low, good stability, excellent electrical insulating property, good processability etc., is widely used in LED encapsulating material field.Yet, mobile poor because the viscosity of epoxy resin is big, solidify back crosslink density height, so exist internal stress big, shortcoming such as fatigue durability, thermal endurance and moisture-proof are relatively poor has restricted the application of epoxy resin aspect structural material to a great extent.Therefore, strengthen the design and development of epoxy resin encapsulating material, improve the wet-hot aging performance of epoxy resin, improve its properties of transparency and have economy and social effect.
Because the organosilicon main chain is made up of the Si-O key, the bond energy of Si-O key is bigger than the bond energy of C-C key and C-O key, therefore should effectively improve its wet-hot aging performance with modifying epoxy resin by organosilicon; Owing to contain the organosilyl good heat resistance of phenyl in the organosilicon that contains other group such as methyl, contain the phenyl modifying epoxy resin by organosilicon so select for use, more can improve the wet-hot aging performance of epoxy resin significantly.At present; The common way of modifying epoxy resin by organosilicon is earlier the organosiloxane polycondensation to be become prepolymer; Again with prepolymer and epoxy resin reaction; Materials Science and Engineering journal " the synthetic and performance of modifying epoxy resin by organosilicon " delivered in February, 2009 for example, not enough below just existing: reactions step is many, not easy to operate, the time is long; And first pre-polymerization afterreaction influences the heat resistance of modified epoxy.
Summary of the invention
The one phenyl silanetriol monomer (CAB) of the object of the present invention is to provide that reactions step is few, the reaction time is short directly with hot transparent LED encapsulating material of high moisture-proof of epoxy resin (EP) prepared in reaction EP-CAB copolymer and preparation method thereof.
The preparation method of the transparent LED encapsulating material of high moisture-proof heat provided by the invention, specific as follows:
The first step, in mixture of ice and water, in the mixed solution of deionized water and acetone, dropwise add a phenyl trichlorosilane, behind the sufficient reacting; Filtration obtains crude product; Further crude product is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 50~70 ℃ of following vacuumize 1~3h obtain a phenyl silanetriol monomer;
Second step, under 80~90 ℃ of conditions of reaction temperature, with epoxy resin 100 weight portions be less than a phenyl silanetriol monomer generation grafting polycondensation reaction 1~2h of 20 weight portions, make the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind 0.5~1.5h, condition of cure be earlier 75~85 ℃ solidify 0.5~1.5h, 115~125 ℃ of curing 1.5~2.5h again.
Preferred reaction conditions is:
The first step, in mixture of ice and water, in the mixed solution of deionized water and acetone, dropwise add a phenyl trichlorosilane, behind the sufficient reacting; Filtration obtains crude product; Further crude product is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer;
Second the step, under 80~90 ℃ of conditions of reaction temperature, the phenyl silanetriol monomer generation grafting polycondensation reaction 1.5h with epoxy resin 100 weight portions and 2~10 weight portions makes the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 1h, condition of cure be earlier 80 ℃ solidify 1h, 120 ℃ of curing 2h again.
By the transparent LED encapsulating material of high moisture-proof heat that said method makes, it can reach water absorption rate is 0.2125%~0.3456%, and heat decomposition temperature is 221 ℃~228 ℃, and light transmittance is 86.93%~90.1% superperformance simultaneously.
The application has following innovative point:
With elder generation the organosiloxane polycondensation is become prepolymer, again prepolymer is compared with the method for epoxy resin reaction, the direct and epoxy resin prepared in reaction EP-CAB copolymer of the synthetic phenyl silanetriol monomer of the present invention; Modifier one phenyl silanetriol monomer is through a phenyl trichlorosilane hydrolysis gained; Shorten the reaction time, reduced the complexity of reaction, and easy operating; The wet-hot aging performance of epoxy resin is obviously improved, and properties of transparency improves.
Description of drawings
Fig. 1 is the process chart of the transparent LED encapsulating material preparation of high moisture-proof heat.
Embodiment
Embodiment 1: with thermosetting epoxy resin (EP) is matrix resin, with synthetic organic silicon monomer and matrix resin reaction, prepares the transparent LED encapsulating material of high moisture-proof heat, and it is following that it specifically prepares process:
The first step, in mixture of ice and water, in the mixed solution of 150ml deionized water and 10ml acetone, dropwise add 10g~30g one phenyl trichlorosilane, the reaction 30min; Filtration obtains crude product; Further it is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer (CAB);
Second step, under 80~90 ℃ of reaction temperatures, be 2~5 weight portion generation grafting polycondensation reaction 1.5h with epoxy resin 100 weight portions and a phenyl silanetriol monomer, prepare the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 1h, condition of cure be earlier 80 ℃ solidify 1h, 120 ℃ of curing 2h again, obtain solidified sample;
The 4th step, carry out performance test according to international standard GB/T1034-1998, the actual measurement water absorption rate is 0.3456%, and heat decomposition temperature is 228 ℃, and simultaneously light transmittance is 86.93%.
Embodiment 2: they with the thermosetting epoxy resin matrix resin, and with synthetic organic silicon monomer and matrix resin reaction, the hot LED encapsulating material of preparation high transparent moisture-proof, it is following that it specifically prepares process:
The first step, in mixture of ice and water, in the mixed solution of 150ml deionized water and 10ml acetone, dropwise add 10g~30g one phenyl trichlorosilane, the reaction 30min; Filtration obtains crude product; Further it is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer (CAB);
Second step, under 80~90 ℃ of reaction temperatures, be 7~10 weight portion generation grafting polycondensation reaction 1.5h with epoxy resin 100 weight portions and a phenyl silanetriol monomer, prepare the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 1h, condition of cure be earlier 80 ℃ solidify 1h, 120 ℃ of curing 2h again, obtain solidified sample;
The 4th step, carry out performance test according to international standard GB/T1034-1998, the actual measurement water absorption rate is 0.2125%, and heat decomposition temperature is 221 ℃, and simultaneously light transmittance is 90.14%.
Embodiment 3: with thermosetting epoxy resin (EP) is matrix resin, with synthetic organic silicon monomer and matrix resin reaction, prepares the transparent LED encapsulating material of high moisture-proof heat, and it is following that it specifically prepares process:
The first step, in mixture of ice and water, in the mixed solution of 150ml deionized water and 10ml acetone, dropwise add 10g~30g one phenyl trichlorosilane, the reaction 30min; Filtration obtains crude product; Further it is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer (CAB);
Second step, under 80~90 ℃ of reaction temperatures, be 20 weight portion generation grafting polycondensation reaction 2h with epoxy resin 100 weight portions and a phenyl silanetriol monomer, prepare the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 1.5h, condition of cure be earlier 85 ℃ solidify 1.5h, 125 ℃ of curing 2.5h again, obtain solidified sample;
The 4th step, carry out performance test according to international standard GB/T1034-1998, the actual measurement water absorption rate is 0.2015%, and heat decomposition temperature is 219 ℃, and simultaneously light transmittance is 84.93%.
Embodiment 4: with thermosetting epoxy resin (EP) is matrix resin, with synthetic organic silicon monomer and matrix resin reaction, prepares the transparent LED encapsulating material of high moisture-proof heat, and it is following that it specifically prepares process:
The first step, in mixture of ice and water, in the mixed solution of 150ml deionized water and 10ml acetone, dropwise add 10g~30g one phenyl trichlorosilane, the reaction 30min; Filtration obtains crude product; Further it is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer (CAB);
Second step, under 80~90 ℃ of reaction temperatures, be 15 weight portion generation grafting polycondensation reaction 1h with epoxy resin 100 weight portions and a phenyl silanetriol monomer, prepare the EP-CAB copolymer;
The 3rd step, in the EP-CAB copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 0.5h, condition of cure be earlier 75 ℃ solidify 0.5h, 115 ℃ of curing 1.5h again, obtain solidified sample;
The 4th step, carry out performance test according to international standard GB/T1034-1998, the actual measurement water absorption rate is 0.2018%, and heat decomposition temperature is 216 ℃, and simultaneously light transmittance is 84.56%.

Claims (4)

1. the preparation method of the transparent LED encapsulating material of one kind high moisture-proof heat, specific as follows:
The first step, in mixture of ice and water, in the mixed solution of deionized water and acetone, dropwise add a phenyl trichlorosilane, behind the sufficient reacting; Filtration obtains crude product; Further crude product is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 1~3h obtain a phenyl silanetriol monomer;
Second step, under 80~90 ℃ of conditions of reaction temperature, with epoxy resin 100 weight portions be less than a phenyl silanetriol monomer generation grafting polycondensation reaction 1~2h of 20 weight portions, make epoxy resin-one phenyl silanetriol copolymer;
The 3rd goes on foot, in epoxy resin-one phenyl silanetriol copolymer, adds 100 weight portion curing systems; The back injection molding stirs; Vacuumize, be cured behind 0.5~1.5h, condition of cure be earlier 75~85 ℃ solidify 0.5~1.5h, again 115~125 ℃ solidify 1.5~2.5h.
2. the method for claim 1 is characterized in that step is following:
The first step, in mixture of ice and water, in the mixed solution of deionized water and acetone, dropwise add a phenyl trichlorosilane, behind the sufficient reacting; Filtration obtains crude product; Further crude product is dissolved in the acetone, utilizes a large amount of deionized waters and sodium carbonate to regulate PH, filter to neutral; 60 ℃ of following vacuumize 2h obtain a phenyl silanetriol monomer;
Second the step, under 80~90 ℃ of conditions of reaction temperature, the phenyl silanetriol monomer generation grafting polycondensation reaction 1.5h with epoxy resin 100 weight portions and 2 ~ 10 weight portions makes epoxy resin-one phenyl silanetriol copolymer;
The 3rd step, in epoxy resin-one phenyl silanetriol copolymer, add 100 weight portion curing systems, the back injection molding that stirs vacuumizes, be cured behind the 1h, condition of cure be earlier 80 ℃ solidify 1h, 120 ℃ of curing 2h again.
3. method as claimed in claim 2 is characterized in that:
In said second step, a phenyl silanetriol monomer is 2 ~ 5 weight portions.
4. method as claimed in claim 2 is characterized in that:
In said second step, a phenyl silanetriol monomer is 7 ~ 10 weight portions.
CN2010102727309A 2010-09-01 2010-09-01 High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof Expired - Fee Related CN102034923B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010102727309A CN102034923B (en) 2010-09-01 2010-09-01 High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2010102727309A CN102034923B (en) 2010-09-01 2010-09-01 High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof

Publications (2)

Publication Number Publication Date
CN102034923A CN102034923A (en) 2011-04-27
CN102034923B true CN102034923B (en) 2012-10-31

Family

ID=43887525

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010102727309A Expired - Fee Related CN102034923B (en) 2010-09-01 2010-09-01 High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof

Country Status (1)

Country Link
CN (1) CN102034923B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107325263A (en) * 2017-07-12 2017-11-07 深圳市珞珈新材料科技有限公司 A kind of ultraviolet light solidifies the preparation method of hyperbranched silicone epoxy resin
CN109384905A (en) * 2017-08-03 2019-02-26 湘潭大学 A kind of over-expense SiClx skeleton bisphenol-a derivative epoxy acrylic resin and preparation method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1560106A (en) * 2004-03-10 2005-01-05 中国科学院广州化学研究所 Modified epoxy resin by organic silicon and its electronic packag material and preparation process thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9085647B2 (en) * 2004-05-31 2015-07-21 Mitsubishi Gas Chemical Company, Inc. Thermoplastic transparent resin

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1560106A (en) * 2004-03-10 2005-01-05 中国科学院广州化学研究所 Modified epoxy resin by organic silicon and its electronic packag material and preparation process thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
刘宝成.环氧改性有机硅树脂技术研究.《涂料工业》.2008,第38卷(第12期),第26-29页. *

Also Published As

Publication number Publication date
CN102034923A (en) 2011-04-27

Similar Documents

Publication Publication Date Title
CN102702441B (en) Preparation method of organic silicon-polymethyl methacrylate composite materials
CN101215381B (en) Method for preparing methylphenyl hydrogen-containing silicone oil
CN102516500B (en) Organic silicon modified epoxy resin for packaging LED (Light Emitting Diode), and preparation method and application thereof
CN103739848B (en) Additional organosilicon packaging plastic tackifier and its preparation method
CN102504270B (en) High-performance organic silicon electronic pouring sealant and preparation method and application thereof
CN104073215A (en) Preparation method for nano silicon dioxide modified organic silicon sealant for packaging of light emitting diode (LED)
CN103242798B (en) High-transparency single-component room temperature vulcanized silicone rubber and preparation method thereof
CN101880396A (en) Preparation method of organic silicon rubber for encapsulating LED being convenient for vacuum defoamation
CN101914364B (en) UV (ultraviolet) curing silicone sealant and preparation method thereof
CN107674636A (en) A kind of preparation of the organosilicon sealant of α aminosilane coupling agent modifyings
CN101787211B (en) High-transparency and high-strength room temperature vulcanization organosilicon electron pouring sealant and preparation method and application thereof
CN110016319A (en) A kind of LED encapsulates the preparation method of ageing-resistant silica gel material
CN104761872A (en) Organic silicon modified epoxy resin encapsulating material and preparation method thereof
CN104232015B (en) The list packaging organic silicon rubber packaging plastic of a kind of high-power type white light LEDs and preparation method
CN104745132A (en) Epoxy resin adhesive for outdoor patch light beads and method for preparing epoxy resin adhesive for outdoor patch light beads
CN105400487A (en) LED encapsulating silica gel with high brightness and high refraction index and preparation method of silica gel
CN103554503A (en) Preparation method of nanometer TiO2/silicon resin hybrid transparent composite material
CN103044918A (en) Organosilicone resin/epoxy resin hybrid materials for packaging light emitting diodes
CN102516501A (en) Photo-curing material for manufacturing light-emitting diode (LED) lens
CN102034923B (en) High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof
CN104277222A (en) Phenyl hydrogen-containing silicone resin for LED encapsulation and preparation method of phenyl hydrogen-containing silicone resin
CN103834356B (en) A kind of carbon base white light emitting material packaging plastic
CN102876281B (en) Preparation method for nano TiO2 modified high-refractive index organic silica gel for chip on board-light emitting diode (COB-LED) pressing strip
CN104031392A (en) Addition-type silica gel, and preparation method and application thereof
CN103113845A (en) LED (Light-Emitted Diode) packaging silicone and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20110427

Assignee: Dalian Gurui Polyurethane Co., Ltd.

Assignor: Dalian Polytechnic University

Contract record no.: 2013210000040

Denomination of invention: High wet-heat resistance transparent light-emitting diode packaging material and preparation method thereof

Granted publication date: 20121031

License type: Exclusive License

Record date: 20130423

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
EM01 Change of recordation of patent licensing contract

Change date: 20140919

Contract record no.: 2013210000040

The licensee after: DALIAN GURUI PU CO., LTD.

The licensee before: Dalian Gurui Polyurethane Co., Ltd.

LICC Enforcement, change and cancellation of record of contracts on the licence for exploitation of a patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121031

Termination date: 20190901

CF01 Termination of patent right due to non-payment of annual fee