CN101988656A - 一种白光led背光源及其制作方法 - Google Patents
一种白光led背光源及其制作方法 Download PDFInfo
- Publication number
- CN101988656A CN101988656A CN2009101621605A CN200910162160A CN101988656A CN 101988656 A CN101988656 A CN 101988656A CN 2009101621605 A CN2009101621605 A CN 2009101621605A CN 200910162160 A CN200910162160 A CN 200910162160A CN 101988656 A CN101988656 A CN 101988656A
- Authority
- CN
- China
- Prior art keywords
- aluminum nitride
- thin layer
- nitride thin
- metal substrate
- silicate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101621605A CN101988656B (zh) | 2009-08-06 | 2009-08-06 | 一种白光led背光源及其制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009101621605A CN101988656B (zh) | 2009-08-06 | 2009-08-06 | 一种白光led背光源及其制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101988656A true CN101988656A (zh) | 2011-03-23 |
CN101988656B CN101988656B (zh) | 2013-08-07 |
Family
ID=43745339
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009101621605A Active CN101988656B (zh) | 2009-08-06 | 2009-08-06 | 一种白光led背光源及其制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN101988656B (zh) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100401516C (zh) * | 2004-04-28 | 2008-07-09 | 宏齐科技股份有限公司 | 白光发光二极管组件的制作方法 |
CN100428512C (zh) * | 2005-01-31 | 2008-10-22 | 东芝照明技术株式会社 | 发光二极管装置 |
CN100559621C (zh) * | 2007-10-19 | 2009-11-11 | 深圳市国冶星光电子有限公司 | 一种白光led及其制造方法 |
CN201204204Y (zh) * | 2008-01-31 | 2009-03-04 | 东莞市科锐德数码光电科技有限公司 | 超大功率led模组光源结构 |
CN201568811U (zh) * | 2009-08-06 | 2010-09-01 | 歌尔声学股份有限公司 | 一种白光led背光源 |
-
2009
- 2009-08-06 CN CN2009101621605A patent/CN101988656B/zh active Active
Also Published As
Publication number | Publication date |
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CN101988656B (zh) | 2013-08-07 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee after: Goertek Inc. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: Goertek Inc. |
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TR01 | Transfer of patent right |
Effective date of registration: 20201118 Address after: No.3, Tonghai Road, chuegang Town, Rudong County, Nantong City, Jiangsu Province, 226000 Patentee after: Rudong County Shengtai new rural development and Construction Co., Ltd Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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TR01 | Transfer of patent right |