CN101982900B - L/S/X three-band dual-polarized planar antenna array - Google Patents

L/S/X three-band dual-polarized planar antenna array Download PDF

Info

Publication number
CN101982900B
CN101982900B CN 201010275940 CN201010275940A CN101982900B CN 101982900 B CN101982900 B CN 101982900B CN 201010275940 CN201010275940 CN 201010275940 CN 201010275940 A CN201010275940 A CN 201010275940A CN 101982900 B CN101982900 B CN 101982900B
Authority
CN
China
Prior art keywords
band
dual
submatrix
substrate
dipole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201010275940
Other languages
Chinese (zh)
Other versions
CN101982900A (en
Inventor
钟顺时
孙竹
孔令兵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Shanghai for Science and Technology
Original Assignee
University of Shanghai for Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Shanghai for Science and Technology filed Critical University of Shanghai for Science and Technology
Priority to CN 201010275940 priority Critical patent/CN101982900B/en
Publication of CN101982900A publication Critical patent/CN101982900A/en
Application granted granted Critical
Publication of CN101982900B publication Critical patent/CN101982900B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention relates to an L/S/X three-band dual-polarized planar antenna array, which is formed through split joint of a pair of L/S dual-band dual-polarized subarrays, a pair of L/X dual-band dual-polarized subarrays and an L single-band dual-polarized subarray, wherein each pair of subarrays is formed by overlapping a plurality of layers of boards; the L/S and L/X dual-band subarrays are formed by three layers of dielectric boards and two layers of rigid foams; the L single-band subarray is formed by two layers of dielectric boards and two layers of rigid foams; laminated microstrip patches (S and X bands) interlace with microstrip dipoles (L band) on the front of the dual-band subarrays (L/S and L/X); and L-band dipoles are arranged in the form of T-shaped array front so as to realize dual-polarization operation and good polarization isolation performance. The antenna has the advantages of wide band, high isolation, low cross polarization, stable phase center, etc.

Description

The L/S/X three-band dual-polarized planar antenna array
Technical field
The present invention relates to a kind of L/S/X three-band dual-polarized planar antenna array, all have the characteristics of broadband, high-isolation and low-cross polarization on three wave bands.It can be used as the antenna of spaceborne synthetic aperture radar (SAR:Synthetic Aperture Radar), and its technology can be applicable to phased array radar and wireless communication system.
Background technology
The microwave synthetic aperture radar not only can be used for obtaining the ground image of large region, and has the penetration capacity to vegetation and ground, now has been widely used in the fields such as resource exploration, major disasters estimation, the earth mapping, militarily has more original advantage.And the SAR antenna is one of key subsystem that determines the synthetic aperture radar performance, and the quality of antenna has directly affected the performances such as sensitivity, distance and bearing resolution, image blur degree and mapping bandwidth of system.
An important trend of SAR antenna is common bore, multiband, multipolarization, broadband at present.Multipolarization can improve amount of information, multiband work provides good scanning resolution, penetrability and reflectance data to different reflectors, utilize two or more wave bands to share an antenna array, can give full play at each different-waveband and carry out simultaneously the characteristics that radar surveying has; The realization of shared-aperture has not only reduced weight and volume, can also share many radar subsystems of antenna array back, improves the payload of onboard system, the efficient of the energy.
carried out in the world the broad research that it is realized technology, as: the dual-band dual-polarized research of aperture micro-strip antenna array altogether of Canadian Manitoba university and MTC company and the CSA cooperation development L/C of company, the research of two kinds of dual-band dual-polarized aperture micro-strip antenna arrays altogether of the L/C that Massachusetts, United States university carries out under JPL subsidizes and L/X etc., different two waveband amalgamation modes is inquired into, as: the perforate paster, the cross paster, (the R.Pokuls such as arrangement interweave, J.Uher and D.M.Pozer, Dual-frequency and dual-polarization microstrip antennas for SAR applications, IEEE Transactions on Antennas and Propagation, vo1.46, Sep.1998, pp.1289-1296).Many work have also been done in this direction by my seminar, made practical sandwich construction single band dual polarization SAR microstrip antenna array model machine (Xian-Ling Liang, Shun-Shi Zhong and Wei Wang, Dual-Polarized corner-fed patch antenna array with high isolation, Microwave and Optical Technology Letters, 2005,47 (6): 520-522).We had made again the dual-band dual-polarized SAR microstrip antenna array experiment of a kind of altogether bore S/X antenna (paster/oscillator interweave arrangement) (X.Qu in 2006, S.-S.Zhong and Y.-M.Zhang, Dual-band Dual-Polarised microstrip antenna array for SAR application, Electronic Letters, 2006,42 (24): 1376-1377), be the secondary antenna array of the same type of domestic first.And in 2008, the designing technique of dual-band dual-polarized antenna battle array (clock up time, the dual-band dual-polarized shared aperture antenna battle array technology of synthetic aperture radar, modern radar, 2009,31 (11): 1-5) have been carried out summarizing.
Summary of the invention
The invention provides a kind of L/S/X three-band dual-polarized planar antenna array, its periodicity continuation can obtain the whole aerial panel for satellite-borne SAR.This antenna array should all have on two interareas of three frequency ranges ± ability of sweeping mutually of 25 ° and have the characteristics of broadband, high polarization isolation and low-cross polarization.
For achieving the above object, thinking of the present invention is: the experience that is total to bore dual-band dual-polarized antenna submatrix by the existing design of this seminar, between bore dual-band antenna battle array wave band, serious interference and front are very crowded altogether, feedback network arrangements difficulty is difficult to also there is no need with similar method, three Band fusions to be advanced in the bore face of same submatrix.
Consider from the angle of whole SAR system, generally wish the beamwidth that obtains at the azimuth direction different-waveband (to obtain close image scanning bandwidth) about equally, mean that its orientation should be proportional to this wave band wavelength to bore face length degree.Therefore, even if work out three-band dual-polarized antenna submatrix, when system-level group of battle array, because L, S-band bore face is larger, and the non-homogeneous bore face that can produce as shown in Figure 1 distributes.Can find from figure, in battle array 3 wave band radiating elements of part, feedback net concentrate, crowded, and L/S/X triband submatrix must be close to L/S two waveband submatrix (because having the graing lobe problem of S-band), has a strong impact on intersegmental isolation index.
The design has adopted another kind of integration scenario, as shown in Figure 2.Antenna array is that the L-band submatrix is spliced by the dual-band dual-polarized submatrix of the L/S of both sides, the dual-band dual-polarized submatrix of L/X and central part, its orientation is respectively to the bore face: L-band 0.72 * 2+0.36+1.08=2.88m, S-band 1.08m, X-band 0.36m meets the ratio of 8: 3: 1.Because the maximum caliber face length degree of full battle array depends on L-band bore face length degree, do not compare in full battle array size and Fig. 1 in Fig. 2 and do not become large.
This scheme resolves into the design work of three-band dual-polarized antenna array in fact the development work of 2 dual-band dual-polarized antenna submatrixs, make the design work of three-band dual-polarized antenna array can use for reference in a large number before my seminar experience has been arranged, and meet the theory of engineering upper module formula exploitation.
According to the foregoing invention thinking, the technical scheme of employing is as follows:
A kind of L/S/X three-band dual-polarized planar antenna array comprises two width L/X, L/S bore dual-band dual-polarized antenna submatrix and a width L-band dual polarization subarray altogether, and its characteristics are:
A. adopt the technology of submatrix splicing, L/X, L/S two width are total to bore dual-band dual-polarized antenna submatrix and L/S/X three-band dual-polarized planar antenna array of width L-band dual polarization subarray composition.Relative traditional design thinking, this design can be continued to use original dual-band dual-polarized antenna design experiences in a large number, and design efficiency is high, and reliability of technology is good;
B. described two dual-band dual-polarized antenna submatrixs mode of structuring the formation of all having adopted lamination microstrip patch and printed dipole to interweave, all adopted " paired anti-phase excitation " technology to improve the cross-polarization performance of full battle array at three wave bands; When the submatrix front is arranged, the L-band oscillator adopts " T " font to distribute to improve polarization isolation, and horizontal/vertical polarization oscillator has adopted different element number to overlap with the phase center of perpendicular polarization with the assurance level;
C. the structure of the stacked patch of two width submatrixs is: X-band drives paster, S-band drives the upside that paster is placed in respectively the 6th substrate, the 3rd substrate, X-band parasitic patch, S-band parasitic patch are placed in respectively the downside of the 5th substrate, the second substrate, and the 5th substrate and the 6th substrate, the second substrate and the 3rd substrate are separated by the 5th froth bed and the second froth bed respectively; Directly adopt the mode of probe excitation to carry out feed, reduced process complexity; And drive on paster at S, X and introduce isolation channel, to improve the polarization isolation performance in target band;
The L-band dipole of d.L/S submatrix is embedded in the space of S-band stacked patch, is comprised of the feedback net of the 3rd substrate upside, the vertical transition parallel metal two-wire that runs through first, second, third 3 laminar substrates and first, second two layers of foam layer, the printed dipole that is positioned at the first substrate downside;
The design of the dipole of e.L single band submatrix and L/X submatrix to design similar, it is different that difference only is to present the substrate sheet metal thickness at net place, parameter and dipole length of the coupling minor matters line of its feedback net also change to some extent;
F. when cutting apart, submatrix cuts to the L-band Vertically Polarized Dipole, have a mind to introduce reactive during design in the feedback net, make dipole length shorten approximately 20%, thereby solved the L-band scan capability of introducing in the submatrix splicing under 3: 1 frequency ratios and limit this problem.
The present invention and like product are relatively, have following apparent outstanding substantive distinguishing features and remarkable advantage: compare with the SIR-C/X-SAR tri-band antenna battle array that U.S.'s shuttle Endeavour in 2000 is entrained, owing to having adopted common bore technology, front overall dimension (direction dimension) has reduced approximately 33.3%, and this is helpful for improving payload.In addition, in disclosed document, the author not yet sees the play-by-play of this type of triband multipolarization common reflector battle array (pearl left in the depths of the sea, unavoidable certainly), because standard and the dual-band antenna battle array passed judgment on are similar, just compare with the dual-band antenna battle array here.The antenna array that can find out the design all has wider and close relative bandwidth on three frequency ranges.Correction data sees the following form.
Table 1
* annotate: in table, '-' is owing to having adopted single polarization or circular polarization, therefore without this index.
Description of drawings
Fig. 1 is the comprehensive schematic diagram (L/S/X triband submatrix+L/S two waveband submatrix+L-band submatrix) of the full battle array of the triband of Traditional Thinking design.
Fig. 2 is comprehensive method of the present invention (L/S, L/X two waveband submatrix+L-band submatrix) schematic diagram.
Fig. 3 is L/S/X three-band dual-polarized planar antenna array structural representation of the present invention.
Fig. 4 is vertical view and the profile of S-band fluting dual polarization stacked patch.
Fig. 5 is vertical view and the profile of X-band fluting dual polarization stacked patch.
Fig. 6 is the perspective view of L-band dipole, feeder line and balun thereof.
Fig. 7 is the S-band cell S Parameter Map (return loss of dual-port, Element Polarization isolation) of the L/S submatrix of emulation.
Fig. 8 is the S-band unit antenna pattern of the L/S submatrix of emulation.
Fig. 9 is the X-band cell S Parameter Map (return loss of dual-port, Element Polarization isolation) of the L/X submatrix of emulation.
Figure 10 is the X-band unit antenna pattern of the L/X submatrix of emulation.
Figure 11 is the S of L-band oscillator of the L/S submatrix of emulation 11Figure.
Figure 12 is the L-band unit antenna pattern of the L/S submatrix of emulation.
Figure 13 is the S of L-band oscillator of the L/X submatrix of emulation 11Figure.
Figure 14 is the L-band unit antenna pattern of the L/X submatrix of emulation.
Embodiment:
The preferred embodiments of the present invention accompanying drawings is as follows:
Embodiment one: referring to Fig. 2 and Fig. 3, the structure of this L/S/X three-band dual-polarized planar antenna array: the X-band unit 5 of the S-band unit 4 of L/S submatrix 1, L/X submatrix 2 all adopts the arrangement mode of " paired anti-phase feed ", has realized the low-cross polarization performance on the radiation direction; L-band dipole 6,7 adopts the mode that interweaves to be embedded in the spacing space of S-band unit, and oscillator employing " T " font arrangement mode of level and perpendicular polarization is realized good polarization isolation; Itself just has outstanding cross-polarization performance the L-band unit, has also still adopted the mode of " paired anti-phase feed " in arranging; " T " word of the micro-strip oscillator of two polarization of L-band is arranged, it has caused its geometric center not overlap, this routine submatrix has adopted 3 perpendicular polarization oscillators with two horizontal polarization oscillators, realized overlapping of L-band horizontal polarization and perpendicular polarization phase center on the submatrix aspect, this is significant for polarimetric radar; Be close to the frequency ratio of 3: 1 owing to having adopted, brought some difficulties to Subarray partition.For L-band spacing after guaranteeing the submatrix splicing satisfies ± 25 ° of scanning requirement (0.667 λ 0), must adopt the Subarray partition mode in (1), therefore the submatrix scale is defined as 8 * 3 yuan of battle arrays.In addition, when cutting apart, submatrix cuts to L-band Vertically Polarized Dipole 6, have a mind to introduce reactive during design in the feedback net, make dipole length shorten approximately 20% (the long 103.7mm of L-band dipole 6 of L/S submatrix, and the long 125.7mm of L-band dipole 7 of L/X submatrix).
Fig. 4,5 illustrates respectively S-band and X-band lamination microstrip patch unit 4,5.X-band drives paster 24, S-band drives the upside that paster 28 is placed in respectively the 6th substrate 23, the 3rd substrate 16, X-band parasitic patch 25, S-band parasitic patch 29 are placed in respectively the downside of the 5th substrate 21, the second substrate 14, and the 5th substrate 21 and the 6th substrate 23, the second substrate 14 and the 3rd substrate 16 are separated by the 5th froth bed 22 and the second froth bed 15 respectively.This structure not only help to increase the cell impedance bandwidth (in Fig. 6, S-band is 3.18-3.74GHz, 16%; In Fig. 8, X-band is 9.1-10.7GHz, 16%), the effect of also having opened director has simultaneously improved module gain (in Fig. 7,9, all approximately 9dB) significantly; Feed adopts probe excitation mode 26,30, has greatly simplified manufacturing procedure and has improved process reliability.Drive and adopt auricle 26,30, the effect that has matched impedance concurrently and rationally stagger joint location on paster.S, X drive leave on paster 24,28 difform isolation channel 8,27 improve polarization isolation on special frequency channel (isolation in L/S wave band S unit band in Fig. 6<-28dB, isolation in L/X wave band X unit band<-30dB);
Figure 6 shows that the L-band dipole 6 of L/S submatrix.It is comprised of the feedback net 11 of the 3rd substrate 16 upsides, the vertical transition parallel metal two-wire 10 that runs through first, second, third 3 laminar substrates 12,14,16 and first, second two layers of foam layer 13,15, the printed dipole that is positioned at first substrate 12 downsides.This design quite compact on one dimension (feedback net, dipole be the wide 5mm that is no more than all, only centered by 0.02 times of frequency wavelength) is conducive to the arrangement that interweaves of front.Due to distance (1/4 λ that has increased the liftoff plate of dipole 0), having reduced antenna element Q value, the beamwidth of antenna has obtained broadening (Figure 10,12,1.17-1.34GHz,>13%).Dipole 7 designs of L single band submatrix and L/X submatrix are similarly distinguished and only are that two selected substrate 16,18,23 sheet metal thicknesses of submatrix are different, and parameter and dipole length of the coupling minor matters line 11 of its feedback net change to some extent;
Embodiment two: the present embodiment is basically identical with embodiment one, and the difference part is as follows:
The parameter of L/S/X three-band dual-polarized planar antenna array is as follows: the lower floor second of two width submatrixs 1,3, the 5th froth bed 15,22 thickness (hf) (are X-band 1.5mm-3.6mm for the 5%-12% of the centre frequency wavelength of place frequency range; S-band 4.2mm-10.5mm), the lower paster length of side (l_a in Fig. 3,4, l_b) is X-band: 6mm-10mm, S-band: 18mm-28mm, and up and down paster side ratio (u_a/l_a, u_b/l_b) is 1.05-1.3 approximately; In the design of L-band printed dipole 6,7, upper strata first, the 4th froth bed 13,20 thickness (hf1) are the 15%-27% of the centre frequency wavelength of place frequency range, (being 36-65mm); L/S submatrix L-band dipole 6 length are 80-120mm, and L/X submatrix L-band dipole (7) length is 100-140mm; The length (f1 in Fig. 6) of feedback net (11) is about 65-95mm; Coupling minor matters line lengths (t) are about: L/S submatrix 16-28mm, L/X submatrix 1-12mm; All substrates 12,14,16,19,21,23,19,18 relative dielectric constant (ε r) be 2-5, its dielectric loss angle tangent (tg δ) is less than or equal to 0.002; All foams (13,15,17,20,22) relative dielectric constant (ε r) be 1-1.2.
Fig. 7-8 have provided the simulation performance of L/S submatrix S-band lamination microstrip patch 4, and Fig. 9-10 are depicted as the simulation result of L/X submatrix X-band lamination microstrip patch 5.The bandwidth of 560MHz (3.18-3.74GHz, 16%) and the impedance bandwidth of 1.6GHz (9.1-10.7GHz, 16%) have been realized respectively; Due to the utilization of stack technology, the gain of two wave bands is all higher, and more approaching, is about 9dB, and in whole frequency range gain stabilization; The isolation of two wave bands all<-30dB.
Figure 11-14 are respectively L-band dipole 6, the 7 unit simulation performance figure of L/S submatrix and L/X submatrix.All realized the impedance bandwidth of 170MHz (1.17-1.34GHz,>13%); Due to the effect of reflecting plate, the gain of dipole is about 8dB simultaneously.
Three bands of this antenna are suitable (relative bandwidth L/S/X is respectively 13%, 16%, 16%) roughly, and gain is similar (L/S/X is respectively 8/9/9dB) also, and stable in whole frequency band.Realized the ability of shared-aperture three-band dual-polarized two interarea scanning works after the submatrix splicing.

Claims (4)

1. a L/S/X three-band dual-polarized planar antenna array, comprise two width L/X, L/S bore dual-band dual-polarized antenna submatrix (1,3) and a width L-band dual polarization subarray (2) altogether, it is characterized in that:
A. adopt the technology of submatrix splicing, two described L/X, L/S are total to bore dual-band dual-polarized antenna submatrix (1,3) form a L/S/X three-band dual-polarized planar antenna array with a width L-band dual polarization subarray (2);
B. described two dual-band dual-polarized antenna submatrixs (1,3) all adopted lamination microstrip patch (4,5) with the L-band dipole (6 that prints, 7) mode of structuring the formation that interweaves has all adopted " paired anti-phase excitation " technology to improve the cross-polarization performance of full battle array at three wave bands; When the submatrix front is arranged, L-band dipole (6,7) adopts " T " font to distribute to improve polarization isolation, and horizontal/vertical polarized dipole and electrical has adopted different element number to overlap with the phase center of perpendicular polarization with the assurance level;
C. the stacked patch (4 of two width submatrixs, 5) structure is: X-band drives paster (24), S-band drives the upside that paster (28) is placed in respectively the 6th substrate (23), the 3rd substrate (16), X-band parasitic patch (25), S-band parasitic patch (29) are placed in respectively the downside of the 5th substrate (21), the second substrate (14), and the 5th substrate (21) is separated by the 5th froth bed (22) and the second froth bed (15) respectively with the 3rd substrate (16) with the 6th substrate (23), the second substrate (14); Directly adopt the mode of probe (26,30) excitation to carry out feed, reduced process complexity; And at the upper isolation channel (8,27) of introducing of the driving paster (28,24) of S, X-band, to improve the polarization isolation performance in target band;
D. the L-band dipole (6) of L/S submatrix is embedded in the space of S-band stacked patch (4), by the feedback net (11) of the 3rd substrate (16) upside, run through first, second, third 3 layers of substrate (12,14,16) and the vertical transition parallel metal two-wire (10) of first, second two layers of foam layer (13,15), the printed dipole that is positioned at the first substrate (12) downside form;
E. L-band dipole (6) structural similarity of dipole (7) structure of L single band submatrix and L/X submatrix and L/S submatrix, difference only is to present the substrate (16 at net place, 18,23) thickness is different, and the parameter of the coupling minor matters line of its feedback net (11) and dipole length also change to some extent;
F. when cutting apart, submatrix cuts to the L-band dipole (6) of perpendicular polarization, introduced reactive in the feedback net, make dipole length shorten approximately 20%, thereby solved the L-band scan capability of introducing in the submatrix splicing under the 3:1 frequency ratio and limit this problem.
2. L/S/X three-band dual-polarized planar antenna array according to claim 1, it is characterized in that described two width submatrixs (1, froth bed (15,22) thickness (hf) scope of high frequency radiation unit 3) is the 5%-12% of the centre frequency wavelength of place frequency range, i.e. X-band 1.5mm-3.6mm; S-band 4.2mm-10.5mm, the lower paster length of side ( L_a, l_b) be X-band: 6mm-10mm, S-band: 18mm-28mm, up and down paster side ratio ( U_a/l_a, u_b/l_b) be 1.05-1.3.
3. L/S/X three-band dual-polarized planar antenna array according to claim 1, it is characterized in that L-band printed dipole (6,7), the integrated upper foam layer (13 of parallel wire feed and balun feedback net (11), 20) thickness (hf1) is the 15%-27% of the centre frequency wavelength of place frequency range, i.e. 36-65mm; L/S submatrix L-band dipole (6) length is 80-120mm, and L/X submatrix L-band dipole (7) length is 100-140mm; The length (fl) of balun feedback net (11) is 65-95mm; Coupling minor matters line lengths (t) are: L/S submatrix 16-28mm, L/X submatrix 1-12mm.
4. L/S/X three-band dual-polarized planar antenna array according to claim 1 is characterized in that the relative dielectric constant of described substrate (12,14,16,19,21,23,19,18) Be 2 ~ 5, its dielectric loss angle tangent Be less than or equal to 0.002; Froth bed (13,15,17,20,22) relative dielectric constant Be 1 ~ 1.1.
CN 201010275940 2010-09-08 2010-09-08 L/S/X three-band dual-polarized planar antenna array Expired - Fee Related CN101982900B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201010275940 CN101982900B (en) 2010-09-08 2010-09-08 L/S/X three-band dual-polarized planar antenna array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201010275940 CN101982900B (en) 2010-09-08 2010-09-08 L/S/X three-band dual-polarized planar antenna array

Publications (2)

Publication Number Publication Date
CN101982900A CN101982900A (en) 2011-03-02
CN101982900B true CN101982900B (en) 2013-06-19

Family

ID=43619794

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201010275940 Expired - Fee Related CN101982900B (en) 2010-09-08 2010-09-08 L/S/X three-band dual-polarized planar antenna array

Country Status (1)

Country Link
CN (1) CN101982900B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108448239A (en) * 2018-02-28 2018-08-24 维沃移动通信有限公司 A kind of millimeter wave antenna array and mobile terminal

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231456B (en) * 2011-04-25 2014-01-15 中国电子科技集团公司第三十八研究所 Dual-band dual-polarization shared aperture antenna
CN102570015A (en) * 2011-11-18 2012-07-11 中国船舶重工集团公司第七二四研究所 Design method of low-profile dual-polarized tile antenna unit adopting T-shaped microstrip feeding
CN103545592A (en) * 2012-07-09 2014-01-29 成都林海电子有限责任公司 L-waveband satellite mobile communication portable terminal antenna and antenna system
CN103259087B (en) * 2013-05-07 2015-04-08 西安电子科技大学 L/C dual-waveband co-aperture antenna based on frequency selective surface
CN103762425B (en) * 2013-11-04 2016-03-30 航天恒星科技有限公司 A kind of dual-band dual-circular polarization common reflector battle array for two dimensional phased scanning
JP6384550B2 (en) 2014-10-20 2018-09-05 株式会社村田製作所 Wireless communication module
CN104319480B (en) * 2014-11-10 2017-09-15 中国电子科技集团公司第五十四研究所 A kind of frequency range Shared aperture miniature antenna of UHF, S, C tri-
CN104836019A (en) * 2015-05-13 2015-08-12 西安电子科技大学 Three-frequency-range common-caliber active navigation antenna
CN106558764B (en) * 2015-09-30 2020-02-14 华为技术有限公司 Feed structure and dual-frequency common-caliber antenna
CN105428782A (en) * 2016-01-04 2016-03-23 张家港保税区灿勤科技有限公司 All-in-one antenna
DE102016002588A1 (en) * 2016-03-03 2017-09-07 Kathrein-Werke Kg cellular antenna
CN106252858B (en) * 2016-08-04 2019-08-09 上海交通大学 S/X wave band Shared aperture miniaturization flat plane antenna
CN106099395A (en) * 2016-08-11 2016-11-09 成都雷电微力科技有限公司 A kind of multifrequency Shared aperture is combined phased array antenna structure
CN109755763B (en) * 2019-01-31 2021-01-01 西南电子技术研究所(中国电子科技集团公司第十研究所) S/Ku dual-frequency common-caliber linear polarization phased array scanning antenna
CN110233330B (en) * 2019-05-10 2020-11-17 电子科技大学 Three-frequency common-aperture antenna based on structural multiplexing
CN111180900B (en) * 2019-12-31 2021-01-15 中国科学院电子学研究所 Multiband airborne radar antenna

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5400042A (en) * 1992-12-03 1995-03-21 California Institute Of Technology Dual frequency, dual polarized, multi-layered microstrip slot and dipole array antenna
CN101814658A (en) * 2009-11-03 2010-08-25 上海大学 S/X dual-band dual-polarized shared-aperture micro-strip oscillator and dielectric resonator array antenna

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108448239A (en) * 2018-02-28 2018-08-24 维沃移动通信有限公司 A kind of millimeter wave antenna array and mobile terminal

Also Published As

Publication number Publication date
CN101982900A (en) 2011-03-02

Similar Documents

Publication Publication Date Title
CN101982900B (en) L/S/X three-band dual-polarized planar antenna array
US4929959A (en) Dual-polarized printed circuit antenna having its elements capacitively coupled to feedlines
CN101982899B (en) S/X dual-band dual-polarized microstrip dipole/laminated patch antenna array
Zhong et al. Tri-band dual-polarization shared-aperture microstrip array for SAR applications
CN102280718A (en) Ku waveband low-profile dual-frequency dual-polarization array antenna
CN104901001B (en) Ridge waveguide biases slot coupling micro-strip oscillator dual polarized antenna
CN108598685B (en) Self-detection microstrip antenna array based on double H-slot coupling
CN101814658A (en) S/X dual-band dual-polarized shared-aperture micro-strip oscillator and dielectric resonator array antenna
CN103606745A (en) Low section compact dual-band dual-polarization common aperture microstrip antenna
CN101710651B (en) Flat plane antenna applicable to mobile satellite communication terminal
Luo et al. Wideband multilayer dual circularly-polarised antenna for array application
Gupta et al. 5G multi-element/port antenna design for wireless applications: a review
US10978812B2 (en) Single layer shared aperture dual band antenna
CN110112578B (en) Rectangular waveguide dual-frequency common-aperture antenna based on structural multiplexing
Jaworski et al. Dual frequency & dual-linear polarization integrated antenna array for application in synthetic aperture radar
Ma et al. Dual-polarized turning torso antenna array for massive MIMO systems
Lee et al. Design of a bandwidth enhanced dual-band dual-polarized array antenna
Zhou et al. Dual linear polarization patch antenna array with high isolation and low cross-polarization
Chen et al. Crossed slot antenna with simple feed for high polarization isolation
CN205194835U (en) Small -size microstrip antenna in satellite navigation system terminal broadband
Bagheri et al. A±45 dual-polarized antenna for 5g mmwave applications based on gap waveguide technology
Shi-Gang et al. Dual-wideband, dual-polarized shared aperture antenna with high isolation and low cross-polarization
WO2009037716A2 (en) High-gain wideband planar microstrip antenna for space borne application
Cheung et al. A broadband dual-circular polarization patch antenna using quadruple l-probe feed
CN111541031B (en) Broadband low-profile transmission array antenna and wireless communication equipment

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
C14 Grant of patent or utility model
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130619

Termination date: 20160908

CF01 Termination of patent right due to non-payment of annual fee