CN101973508B - Flexible substrate MEMS technology-based electroencephalogram dry electrode array and preparation method thereof - Google Patents
Flexible substrate MEMS technology-based electroencephalogram dry electrode array and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a flexible substrate MEMS technology-based electroencephalogram dry electrode array and a preparation method thereof, belonging to the technical field of micro electro mechanical system. The electrode array comprises a stationary fixture and a plurality of electroencephalogram dry electrodes fixed in the stationary fixture; wherein the electroencephalogram dry electrode comprises a metal electrode micro needle and a circuit layer as well as a second metal seed layer and a second polyimide layer which are arranged at the two sides thereof, the surface of the metal electrode micro needle is coated with an inertia metal layer, and a first polyimide layer is flexible substrate of electroencephalogram dry electrode. The invention has simple process and high yield; the position of electrode can be changed according to application requirement; metal is adopted as electrode main body, mechanical strength is high, resistance is small, imaging quality of flexible substrate is high, and biocompatibility is good; multilayer packaging of electrode is adopted and fixture is used for fixing, and the prepared electrode stereoscopic array is easy to fix and has good shielding characteristic.
Description
Technical field
What the present invention relates to is electrode of a kind of micro-electromechanical system field and preparation method thereof, specifically is a kind of based on technological dried electrod-array of electroencephalogram of flexible substrate MEMS and preparation method thereof.
Background technology
Dried electrode is mainly used in the measurement of electroencephalogram, alternative existing wired brain wave acquisition equipment based on wet electrode.Dried electrode can directly pass keratoderma, overcomes the high impedance that cuticula brings; Receive environmental constraints little, can carry out quick, painless eeg signal acquisition.Electroencephalogram is done the development of electrode fabrication, with the application that promotes the brain power technology towards masses greatly, thereby improves people's living standard.Dried electrode requires to have certain mechanical strength, good biocompatibility, impedance is little, electrode can be arranged as required, easy fixation, shield characteristics such as good to external world.Polyimides is good with its insulating properties, good biocompatibility, be rich in the encapsulating material that characteristics such as flexibility are widely used in biological microelectrode.
Through the retrieval of prior art is found, people such as Sui Xiaohong are at " sensing technology journal ", and 2006,19 (5): introduced a kind of preparation method of two-dimentional implantable silicon microelectrode in 1419, adopted the chemical vapour deposition (CVD) SiO that on (100) silicon substrate, grows
2As the pin main body, make probe, metal connecting line and solder joint with titanium/gold, use catechol-ethylenediamine-water (EPW) wet etching silicon to discharge device at last.Corrosive liquid EPW is poisonous, is unfavorable for the biocompatibility of device; With SiO
2Electrode as the pin main body is more crisp, fractures easily, and rough, the acute experiment that only suitable short-term is implanted.
Choi JW etc. are at SICE-ICASE International Joint Conference 2006, Oct.18-21,2006 in Bexco; Busan; Reported a kind of preparation method of three-dimensional micropin among the Korea:3678, made public when adopting digital micro-mirror (DMD, digitalMicromirror Device) to carry out based on not the waiting of pixel; Thereby reach the effect of stereolithography, prepared the different microneedle array of sharp-pointed degree.The efficient of this technology is lower, can't realize volume production.
People such as Lin CT are at Proceedings of the IEEE; 2008; 96 (7): adopt hard mask that silicon is carried out isotropic etching in 1167 and make the electrode needle point, make the leg portion of electrode again with anisotropic etching, remove behind the mask at the electrode surface plated metal.In this way the pin bottom size of the stereo electrod of preparation is less, and silicon is easy to break as the electrode of main body; In addition, directly the three-dimensional dried electrode of preparation does not have corresponding connector, and uses the method for traditional welding to be easy to generate rosin joint, and solder joint place fastness is limited, and electrode can't be connected with follow-up relevant device well.
Summary of the invention
The present invention is directed to the above-mentioned deficiency that prior art exists; A kind of dried electrod-array of electroencephalogram based on flexible substrate MEMS technology and preparation method thereof is provided, and preparation gained electrode has device can be from advantage such as discharging, technology is simple, yield rate is high, good biocompatibility, shielding are good.
The present invention realizes through following technical scheme:
The present invention relates to a kind of preparation method, may further comprise the steps based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS:
The first step, apply adhesion layer, sputter first metal seed layer on adhesion layer again at treated substrate surface.
Described substrate is meant: glass or silicon chip.
Described adhesion layer is meant that thickness is the dimethyl silicone polymer of 50-200 μ m.
Described first metal seed layer is meant that thickness is chromium/copper metal of 50-200nm.
Second step, on first metal seed layer, apply positive glue, make sacrificial metal layer with photoetching process and electrocasting successively again after, remove the photoresist and first metal seed layer successively to exposing adhesion layer.
The thickness of described sacrificial metal layer is 20-50 μ m.
The 3rd step, coating polyimide acid on sacrificial metal layer and the adhesion layer that exposes are handled through heat cure and to be processed flexible substrate first polyimide layer, polish first polyimide layer to exposing sacrificial metal layer through polishing machine again.
Described first polyimide layer is than metallic sacrificial floor height 1-5 μ m.
The 4th the step, on first polyimide layer sputter second metal seed layer; Apply positive glue then above that; After preparing metal electrode micropin and circuit layer through photoetching process and electrocasting, remove the photoresist and second metal seed layer successively, expose first polyimide layer and sacrificial metal layer.
Described second metal seed layer is meant that thickness is chromium/copper metal of 50-200nm.
The thickness of described metal electrode micropin and circuit layer is 28-70 μ m, and live width is 50-200 μ m, and micropin length is 200-500 μ m, and the needle point ratio is 1: 1 to 1: 2.
The 5th step, coating polyimide acid on metal electrode micropin and circuit layer, first polyimide layer that exposes and sacrificial metal layer; After preceding baking is handled; Apply positive glue; Through photoetching process and developer solution etching polyimide acid it is carried out graphically removing whole photoresists, heat cure is handled and is processed second polyimide layer.
The thickness of described second polyimide layer is 5-20 μ m, and the shape of this second polyimide layer is identical with first polyimide layer.
Described heat cure is handled and is meant: adopt 80 ℃, 110 ℃, 150 ℃, 270 ℃ ladder-elevating temperature method to be heating and curing.
First metal seed layer under the 6th step, removal sacrificial metal layer and the sacrificial metal layer is realized the release of the graphical and electrode micropin cantilever beam structures of first polyimide layer.
The 7th the step, through galvanoplastic electrode micropin surface is plated the inert metal protective layer; Place absolute ethyl alcohol to make dimethyl silicone polymer adhesion layer swelling slice, thin piece; The surface loses activity, and device is peeled off from substrate, makes the dried electrode of electroencephalogram based on flexible substrate MEMS technology.
Described inert metal protective layer thickness is 0.5-1.5 μ m.
Two ends adopted screw to fix after the 8th step, the dried electrode of the electroencephalogram after will discharging were assembled to anchor clamps through multilayer, made the technological dried electrod-array of electroencephalogram based on flexible substrate MEMS.
Described multilayer is meant the 4-10 layer.
Described anchor clamps are fabricated structure or monolithic construction, and these anchor clamps are identical with first polyimide layer with the binding face shape of electrode.
Described screw is meant that diameter is the nylon screw of 1.5-2.5mm.
The present invention relates to the dried electrod-array of electroencephalogram that method for preparing obtains; Comprise: stationary fixture and be fixed in the dried electrode of several layers electroencephalogram; The dried electrode of this electroencephalogram comprises: metal electrode micropin and circuit layer and second metal seed layer and second polyimide layer that are positioned at its both sides; Metal electrode micropin surface coats the inert metal layer, and first polyimide layer is the flexible substrate of the dried electrode of electroencephalogram.
The present invention's advantage compared with prior art is: (1) has utilized the method for polishing machine polishing, photoetching, electroforming to carry out flexible substrate graph, and technology is simple, and yield rate is high; (2) position of electrode can change its arrangement according to application requirements; (3) adopt metal as electrode body, mechanical strength is high, impedance is little; (4) adopt the metallic sacrificial layer process to realize flexible substrate graph, the flexible substrate graph quality is high; (5) adopt biocompatible materialses such as polyimides and gold, good biocompatibility; (6) adopt the multilayer assembling of electrode and use clamps, process the solid array of electrode, easy fixation and shield good.
Description of drawings
Fig. 1 is a process chart of the present invention;
Wherein: 1 substrate, 2 adhesion layers, 3 first metal seed layers, 4 sacrificial metal layer, 5 first polyimide layers, 6 second metal seed layers, 7 metal electrode micropins and circuit layer, 8 second polyimide layers, 9 inert metal layers, 10 anchor clamps, 11 fixed screws.
Fig. 2 is embodiment electrode sections figure;
Wherein: 5 first polyimide layers, 6 second metal seed layers, 7 metal electrode micropins and circuit layer, 8 second polyimide layers, 9 inert metal layers, 10 anchor clamps, 11 fixed screws.
The specific embodiment
Elaborate in the face of embodiments of the invention down, present embodiment provided detailed embodiment and concrete operating process, but protection scope of the present invention is not limited to following embodiment being to implement under the prerequisite with technical scheme of the present invention.
Embodiment 1
Electroencephalogram is done the electrode array configurations parameter: glass substrate, dimethyl silicone polymer adhesion layer thickness 50 μ m, biological microelectrode gross thickness 55 μ m; Nickel electrode micropin and circuit layer thickness 28 μ m, live width 50 μ m, micropin length 200 μ m; Needle point ratio 1: 1, golden protective layer thickness 0.5 μ m adopts 10 layers of assembling; Anchor clamps are combined type, and the nylon screw diameter is 1.5mm.
As shown in Figure 1, it is following that present embodiment prepares process:
(1) preparation of substrate processing and dimethyl silicone polymer adhesion layer
Employing thickness is that the sheet glass of 2mm is a substrate 1, at first carries out substrate and handles: clean with calcium carbonate powder, acetone, alcohol and deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of baking ovens.Coating thickness is the thick dimethyl silicone polymer adhesion layers 2 of 50 μ m on substrate then, and rotating speed is 2000rpm, under 260 ℃ of vacuum drying ovens, carries out solidifying in 2 hours.First chromium of sputter 50nm/copper metal seed layer 3 on dimethyl silicone polymer adhesion layer 2 subsequently.
(2) preparation of sacrificial metal layer
Coating thickness is the positive glue AZ4903 of 20 μ m on first chromium/copper metal seed layer 3; Adopt the German Karl Suss MA6 of company photo-etching machine exposal; Time for exposure is 180 seconds, and developing time is 170 seconds, the copper sacrificial metal layer 4 of electroforming thickness 20 μ m; Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove first chromium/copper metal seed layer 3.
The preparation of (3) first polyimide layers
Coating thickness is the polyimide acid of 25 μ m on copper sacrificial metal layer 4 and the dimethyl silicone polymer adhesion layer 2 that exposes; Rotating speed is 1500rpm, adopts ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure to handle and process flexible substrate first polyimide layer 5.Polish first polyimide layer 5 to exposing copper sacrificial metal layer 4 with polishing machine.
(4) preparation of metal electrode micropin and circuit layer
Second chromium of sputter 50nm/copper metal seed layer 6 on first polyimide layer 5; Apply the thick positive glue AZ4903 of 30 μ m then above that, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 230 seconds; Developing time is 240 seconds; Nickel metal electrode micropin and the circuit layer 7 of electroforming thickness 28 μ m, live width 50 μ m, micropin length 200 μ m, needle point ratio 1: 1.Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove second chromium/copper metal seed layer 6, expose first polyimide layer 5 and copper sacrificial metal layer 4.
The preparation of (5) second polyimide layers
Coating thickness is the polyimide acid of 5 μ m on nickel metal electrode micropin and circuit layer 7, first polyimide layer 5 that exposes and copper sacrificial metal layer 4, and rotating speed is 3000rpm, and preceding baking is 30 minutes in 135 ℃ of baking ovens.Apply the thick positive glue AZ4620 of 5 μ m, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 90 seconds; Developing time be 240 seconds (because of sample bottom uneven; Need to increase the time for exposure, adopt developer solution etching polyimide acid, need to increase developing time).Remove photoresist with acetone, adopt ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure to handle and process second polyimide layer 8.
(6) removal of sacrificial metal layer
Remove copper sacrificial metal layer 4 with ammoniacal liquor, hydrogen peroxide mixed solution; Chromium in the first chromium/copper metal seed layer 3 of potassium permanganate, NaOH mixed solution removal copper sacrificial metal layer 4 belows is realized the release of the graphical and electrode micropin cantilever beam structures of first polyimide layer.
(7) preparation of inert metal protective layer and device are peeled off
Use pulse current to electroplate the golden protective layer 9 of thickness 0.5 μ m; Place absolute ethyl alcohol to make dimethyl silicone polymer adhesion layer 2 swellings slice, thin piece; The surface loses activity, and then device is peeled off from substrate, makes the dried electrode of electroencephalogram based on flexible substrate MEMS technology.
(8) multilayer of device assembling
With the stack of the device after 10 releases, be assembled in the modular fixture 10, fixing with the nylon screw 11 of diameter 1.5mm, make the dried electrod-array of electroencephalogram based on flexible substrate MEMS technology.
Biological microelectrode array structural parameters: glass substrate, dimethyl silicone polymer adhesion layer thickness 200 μ m, biological microelectrode gross thickness 100 μ m; Nickel electrode micropin and circuit layer thickness 48 μ m, live width 100 μ m, micropin length 300 μ m; Needle point ratio 1: 1.5, golden protective layer thickness 1 μ m adopts 8 layers of assembling; Anchor clamps are monoblock type, and the nylon screw diameter is 2mm.
As shown in Figure 1, it is following that present embodiment prepares process:
(1) preparation of substrate processing and dimethyl silicone polymer adhesion layer
Employing thickness is that the sheet glass of 2mm is a substrate 1, at first carries out substrate and handles: clean with calcium carbonate powder, acetone, alcohol and deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of baking ovens.Coating thickness is the thick dimethyl silicone polymer adhesion layers 2 of 200 μ m on substrate then, and rotating speed is 600rpm, under 260 ℃ of vacuum drying ovens, carries out solidifying in 2 hours.First chromium of sputter 100nm/copper metal seed layer 3 on dimethyl silicone polymer adhesion layer 2 subsequently.
The preparation of (2) first sacrificial metal layer
Coating thickness is the positive glue AZ50XT of 40 μ m on first chromium/copper metal seed layer 3; Adopt the German Karl Suss MA6 of company photo-etching machine exposal; Time for exposure is 350 seconds, and developing time is 750 seconds, the copper sacrificial metal layer 4 of electroforming thickness 40 μ m; Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove first chromium/copper metal seed layer 3.
The preparation of (3) first polyimide layers
Coating thickness is the polyimide acid of 45 μ m on copper sacrificial metal layer 4 and the dimethyl silicone polymer adhesion layer 2 that exposes; Rotating speed is 900rpm, adopts ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure to handle and process flexible substrate first polyimide layer 5.Polish first polyimide layer 5 to exposing copper sacrificial metal layer 4 with polishing machine.
(4) preparation of metal electrode micropin and circuit layer
Second chromium of sputter 100nm/copper metal seed layer 6 on first polyimide layer 5; Apply the thick positive glue AZ50XT of 50 μ m then above that, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 450 seconds; Developing time is 800 seconds; Nickel metal electrode micropin and the circuit layer 7 of electroforming thickness 48 μ m, live width 100 μ m, micropin length 300 μ m, needle point ratio 1: 1.5.Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove second chromium/copper metal seed layer 6, expose first polyimide layer 5 and copper sacrificial metal layer 4.
The preparation of (5) second polyimide layers
Coating thickness is the polyimide acid of 10 μ m on nickel metal electrode micropin and circuit layer 7, first polyimide layer 5 that exposes and copper sacrificial metal layer 4, and rotating speed is 2500rpm, and preceding baking is 30 minutes in 135 ℃ of baking ovens.Apply the thick positive glue AZ4903 of 10 μ m, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 160 seconds; Developing time be 300 seconds (because of sample bottom uneven; Need to increase the time for exposure, adopt developer solution etching polyimide acid, need to increase developing time).Remove photoresist with acetone, adopt ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure shape to handle and process into second polyimide layer 8.
(6) removal of sacrificial metal layer
Remove copper sacrificial metal layer 4 with ammoniacal liquor, hydrogen peroxide mixed solution; Chromium in the first chromium/copper metal seed layer 3 of potassium permanganate, NaOH mixed solution removal copper sacrificial metal layer 4 belows is realized the release of the graphical and electrode micropin cantilever beam structures of first polyimide layer.
(7) preparation of inert metal protective layer and device are peeled off
Use pulse current to electroplate the golden protective layer 9 of thickness 1 μ m; Place absolute ethyl alcohol to make dimethyl silicone polymer adhesion layer 2 swellings slice, thin piece; The surface loses activity, and then device is peeled off from substrate, makes the dried electrode of electroencephalogram based on flexible substrate MEMS technology.
(8) multilayer of device assembling
With the stack of the device after 8 releases, be assembled in the monoblock type anchor clamps 10, fixing with the nylon screw 11 of diameter 2mm, make the dried electrod-array of electroencephalogram based on flexible substrate MEMS technology.
Biological microelectrode array structural parameters: silicon chip, dimethyl silicone polymer adhesion layer thickness 100 μ m, biological microelectrode gross thickness 120 μ m; Nickel electrode micropin and circuit layer thickness 68 μ m, live width 200 μ m, micropin length 500 μ m; Needle point ratio 1: 2, golden protective layer 1.5 μ m adopt 4 layers of assembling; Anchor clamps are combined type, and the nylon screw diameter is 2.5mm.
As shown in Figure 1, it is following that present embodiment prepares process:
(1) preparation of substrate processing and dimethyl silicone polymer adhesion layer
Employing thickness is that the silicon chip of 0.5mm is a substrate 1, at first carries out substrate and handles: clean with the deionized water ultrasonic cleaning, oven dry is 3 hours in 180 ℃ of baking ovens.Coating thickness is the thick dimethyl silicone polymer adhesion layers 2 of 100 μ m on substrate then, and rotating speed is 1000rpm, under 260 ℃ of vacuum drying ovens, carries out solidifying in 2 hours.First chromium of sputter 200nm/copper metal seed layer 3 on dimethyl silicone polymer adhesion layer 2 subsequently.
The preparation of (2) first sacrificial metal layer
Coating thickness is the positive glue AZ50XT of 50 μ m on first chromium/copper metal seed layer 3; Adopt the German Karl Suss MA6 of company photo-etching machine exposal; Time for exposure is 450 seconds, and developing time is 800 seconds, the copper sacrificial metal layer 4 of electroforming thickness 50 μ m; Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove first chromium/copper metal seed layer 3.
The preparation of (3) first polyimide layers
Coating thickness is the polyimide acid of 55 μ m on copper sacrificial metal layer 4 and the dimethyl silicone polymer adhesion layer 2 that exposes; Rotating speed is 700rpm, adopts ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure to handle and process flexible substrate first polyimide layer 5.Polish first polyimide layer 5 to exposing copper sacrificial metal layer 4 with polishing machine.
(4) preparation of metal electrode micropin and circuit layer
Second chromium of sputter 200nm/copper metal seed layer 6 on first polyimide layer 5; Apply the thick positive glue AZ50XT of 70 μ m then above that, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 500 seconds; Developing time is 900 seconds; Nickel metal electrode micropin and the circuit layer 7 of electroforming thickness 68 μ m, live width 200 μ m, micropin length 500 μ m, needle point ratio 1: 2.Remove photoresist with acetone, successively adopt ammoniacal liquor, hydrogen peroxide mixed solution and potassium permanganate, NaOH mixed solution to remove second chromium/copper metal seed layer 6, expose first polyimide layer 5 and copper sacrificial metal layer 4.
The preparation of (5) second polyimide layers
Coating thickness is the polyimide acid of 20 μ m on nickel metal electrode micropin and circuit layer 7, first polyimide layer 5 that exposes and copper sacrificial metal layer 4, and rotating speed is 2000rpm, and preceding baking is 30 minutes in 135 ℃ of baking ovens.Apply the thick positive glue AZ4903 of 15 μ m, adopt the German Karl Suss MA6 of company photo-etching machine exposal, the time for exposure is 230 seconds; Developing time be 480 seconds (because of sample bottom uneven; Need to increase the time for exposure, adopt developer solution etching polyimide acid, need to increase developing time).Remove photoresist with acetone, adopt ladder-elevating temperature method (80 ℃--110 ℃--150 ℃--270 ℃) heat cure to handle and process second polyimide layer 8.
(6) removal of sacrificial metal layer
Remove copper sacrificial metal layer 4 with ammoniacal liquor, hydrogen peroxide mixed solution; Chromium in the first chromium/copper metal seed layer 3 of potassium permanganate, NaOH mixed solution removal copper sacrificial metal layer 4 belows is realized the release of the graphical and electrode micropin cantilever beam structures of first polyimide layer.
(7) preparation of inert metal protective layer and device are peeled off
Use pulse current to electroplate the golden protective layer 9 of thickness 1.5 μ m; Place absolute ethyl alcohol to make dimethyl silicone polymer adhesion layer 2 swellings slice, thin piece; The surface loses activity, and then device is peeled off from substrate, makes the dried electrode of electroencephalogram based on flexible substrate MEMS technology.
(8) multilayer of device assembling
With the stack of the device after 4 releases, be assembled in the modular fixture 10, fixing with the nylon screw 11 of diameter 2.5mm, make the dried electrod-array of electroencephalogram based on flexible substrate MEMS technology.
Claims (14)
1. the preparation method based on the dried electrod-array of electroencephalogram of flexible substrate MEMS technology is characterized in that, may further comprise the steps:
The first step, apply adhesion layer, sputter first metal seed layer on adhesion layer again at treated substrate surface;
Second step, on first metal seed layer, apply positive glue, make sacrificial metal layer with photoetching process and electrocasting successively again after, remove the photoresist and first metal seed layer successively to exposing adhesion layer;
The 3rd step, coating polyimide acid on sacrificial metal layer and the adhesion layer that exposes are handled through heat cure and to be processed substrate first polyimide layer, polish first polyimide layer to exposing sacrificial metal layer through polishing machine again;
The 4th the step, on first polyimide layer sputter second metal seed layer; On second metal seed layer, apply positive glue then; After preparing metal electrode micropin and circuit layer through photoetching process and electrocasting, remove the photoresist and second metal seed layer successively to exposing first polyimide layer and sacrificial metal layer;
The 5th step, coating polyimide acid on metal electrode micropin and circuit layer, first polyimide layer that exposes and sacrificial metal layer; After preceding baking is handled; Apply positive glue; Through photoetching process and developer solution etching polyimide acid it is carried out graphically removing whole photoresists, heat cure is handled and is processed second polyimide layer;
The 6th step, removal sacrificial metal layer, and first metal seed layer under the sacrificial metal layer realize the release of the graphical and electrode micropin cantilever beam structures of first polyimide layer;
The 7th the step, through galvanoplastic electrode micropin surface is plated the inert metal protective layer; Place absolute ethyl alcohol to make dimethyl silicone polymer adhesion layer swelling substrate then; The surface loses activity, and device is peeled off from substrate, makes the dried electrode of electroencephalogram based on flexible substrate MEMS technology;
Two ends adopted screw to fix after the 8th step, the dried electrode of the electroencephalogram after will discharging were assembled to anchor clamps through multilayer, made the technological dried electrod-array of electroencephalogram based on flexible substrate MEMS.
2. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described substrate is meant: glass or silicon chip.
3. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described adhesion layer is meant that thickness is the dimethyl silicone polymer of 50-200 μ m.
4. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described first metal seed layer is meant that thickness is chromium/copper metal of 50-200nm.
5. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that the thickness of described sacrificial metal layer is 20-50 μ m.
6. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1; It is characterized in that; Than metallic sacrificial floor height 1-5 μ m, polishing back first polyimides is identical with the metallic sacrificial layer height before polishing for described first polyimide layer.
7. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described second metal seed layer is meant that thickness is chromium/copper metal of 50-200nm.
8. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1; It is characterized in that; The thickness of described metal electrode micropin and circuit layer is 28-70 μ m; Live width is 50-200 μ m, and micropin length is 200-500 μ m, and the needle point ratio is 1: 1 to 1: 2.
9. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described heat cure is handled and is meant: adopt 80 ℃, 110 ℃, 150 ℃, 270 ℃ ladder-elevating temperature method to be heating and curing.
10. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described inert metal protective layer thickness is 0.5-1.5 μ m.
11. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described multilayer is meant the 4-10 layer.
12. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1; It is characterized in that; Described anchor clamps are fabricated structure or monolithic construction, and these anchor clamps are identical with first polyimide layer with the binding face shape of electrode.
13. the preparation method based on the technological dried electrod-array of electroencephalogram of flexible substrate MEMS according to claim 1 is characterized in that described screw is meant that diameter is the nylon screw of 1.5-2.5mm.
14. dried electrod-array of electroencephalogram for preparing according to the said method of above-mentioned arbitrary claim based on flexible substrate MEMS technology; It is characterized in that; Comprise: anchor clamps and be fixed in the dried electrode of several layers electroencephalogram, the dried electrode of this electroencephalogram comprises: metal electrode micropin and circuit layer and second metal seed layer and second polyimide layer that are positioned at its both sides, metal electrode micropin surface coats the inert metal protective layer; First polyimide layer is the flexible substrate of the dried electrode of electroencephalogram; Wherein, the thickness of described metal electrode micropin and circuit layer is 28-70 μ m, and live width is 50-200 μ m; Micropin length is 200-500 μ m, and the needle point ratio is 1: 1 to 1: 2; Described second metal seed layer is that thickness is chromium/copper metal of 50-200nm; The thickness of described second polyimide layer is 5-20 μ m; Described inert metal protective layer thickness is 0.5-1.5 μ m.
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| CN109171715B (en) * | 2018-09-20 | 2019-11-22 | 清华大学 | Use the wearable device of flexible extending electrode acquisition EEG signals |
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| CN112107307B (en) * | 2020-08-24 | 2021-05-25 | 中国科学院上海微系统与信息技术研究所 | Preparation method and structure of high-flux implanted flexible nerve electrode |
| CN113397502B (en) * | 2021-05-28 | 2022-11-08 | 北京理工大学 | Multimode data acquisition equipment based on neural feedback |
| CN114376580A (en) * | 2022-01-04 | 2022-04-22 | 中国科学院上海微系统与信息技术研究所 | Flexible nerve electrode, preparation method thereof and brain-computer interface |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101138663A (en) * | 2007-10-25 | 2008-03-12 | 上海交通大学 | Preparation method of biological microelectrode array based on flexible substrate |
| CN101700869A (en) * | 2009-11-12 | 2010-05-05 | 上海交通大学 | Method for preparing flexible substrate biological microelectrode array based on substrate graph |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1766672A2 (en) * | 2004-05-14 | 2007-03-28 | California Institute of Technology | Parylene-based flexible multi-electrode arrays for neuronal stimulation and recording and methods for manufacturing the same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101138663A (en) * | 2007-10-25 | 2008-03-12 | 上海交通大学 | Preparation method of biological microelectrode array based on flexible substrate |
| CN101700869A (en) * | 2009-11-12 | 2010-05-05 | 上海交通大学 | Method for preparing flexible substrate biological microelectrode array based on substrate graph |
Non-Patent Citations (2)
| Title |
|---|
| 周然等.基于柔性衬底的三维生物刺激微电极阵列研究.《传感器与微系统》.2010,第29卷(第5期),第134-136页. * |
| 徐旻等.新型聚酰亚胺图形化工艺制备视网膜电极.《微纳电子技术》.2010,第47卷(第2期),第105-109页. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108534930A (en) * | 2018-03-23 | 2018-09-14 | 京东方科技集团股份有限公司 | Pressure visualization device and preparation method thereof, detection device |
| CN108534930B (en) * | 2018-03-23 | 2019-12-10 | 京东方科技集团股份有限公司 | Pressure visualization device, preparation method thereof and detection equipment |
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