CN101969093A - Light-emitting diode element - Google Patents
Light-emitting diode element Download PDFInfo
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- CN101969093A CN101969093A CN2010102533746A CN201010253374A CN101969093A CN 101969093 A CN101969093 A CN 101969093A CN 2010102533746 A CN2010102533746 A CN 2010102533746A CN 201010253374 A CN201010253374 A CN 201010253374A CN 101969093 A CN101969093 A CN 101969093A
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- led device
- optical
- reflection cavity
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Abstract
The invention relates to a light-emitting diode (LED) element. The LED element comprises a chip and an encapsulation platform which loads the chip, wherein a 15-165 degrees of angle is formed between the normal of the upper surface of an LED chip and the normal of the upper surface of the encapsulation platform, thus the light which shines to the lower surface of the substrate can directly escape. Therefore, the emergent light of the lower surface of the chip can be fully utilized, the extraction efficiency of the LED chip can be increased, and the extraction efficiency is increased by more than 20% compared with the traditional blue LED.
Description
Technical field
The present invention relates to a kind of LED device, specifically, relate to a kind of non-parallel encapsulated LED device, belong to led chip manufacturing, encapsulation and LED lighting field.
Background technology
In recent years along with worldwide energy-conserving and environment-protective notion is risen, the led chip technology obtains fast development, nitride semiconductor LED chip light emitting efficient improves very fast, reached more than 130 lumens/watt with the white light LEDs list lamp source efficient of blue-light LED chip as excitaton source, considerably beyond the light efficiency of common energy-saving lamp, the LED technology begins to enter general illumination market comprehensively; Along with the further expansion of LED range of application, also more and more higher to the requirement of LED device luminous efficiency.
As shown in Figure 1, existing blue-light LED chip 11 comprises: by Al
2O
3The substrate 1 that the sapphire of crystal material, SiC, Si or GaN crystalline material constitute, GaN semiconductor buffer layer 2, n type Al
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) semiconductor layer 3, GaN/In
yGa
1-yN (0≤y≤1) quantum well structure light-emitting layer 4 and p type Al
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) semiconductor layer 5, wherein, the thickness of substrate 1 is the 20-450 micron, n N-type semiconductor N structure 3 can be by one deck Al
xIn
yGa
1-x-yThe Al of the different components of N (0≤x≤1,0≤y≤1) material layer or multilayer
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) material layer constitutes, and light-emitting layer 4 can be made of one or more pairs of quantum well structures, and p type semiconductor layer 5 can be by one deck Al
xIn
yGa
1-x-yThe Al of the different components of N (0≤x≤1,0≤y≤1) material layer or multilayer
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) material layer constitutes, and the thickness altogether of n type semiconductor layer 3, light-emitting layer 4 and p type semiconductor layer 5 is the 1-10 micron.
In blue-light LED chip 11, be the lower surface of this layer structure towards the interface of substrate 1 in each structure sheaf of chip, another parallel with lower surface in this layer structure interface is a upper surface, if structure sheaf is made of the multi-lager semiconductor material, then the definition of the lower surface of each layer material and upper surface is the same, and the interface of each structure sheaf of chip or other direction of multi-lager semiconductor material is defined as the side of each structure sheaf of chip or semiconductor material layer.The light that light-emitting layer 4 is sent in the led chip is distributed on the chip all directions, and wherein the emergent light of the upper surface of directive chip and lower surface has accounted for whole luminous more than 75%.
As shown in Figure 2, the mode that present led chip manufacturing, encapsulation are adopted all is with chip 11 parallel being encapsulated on the package platforms 10, be the lower surface of chip 11 and the surperficial parallel applying of package platforms 10, the normal direction of the lower surface of chip 11 is parallel with package platforms 10 normal to a surface directions, in this case, the light of directive chip 11 lower surfaces and package platforms 10 interfaces blocks packed platform 10, causes light loss.For effectively utilizing emergent light, reduce light loss, at present, method commonly used is to produce the speculum of high reflectance at the lower surface of chip 11 substrates, utilize again after the emergent light reflection with directive substrate lower surface, though this method can reduce the loss of light, because the restriction and the loss of reverberation in chip of reflectance of reflector still can not reach best effect.
Summary of the invention
The problem to be solved in the present invention is at above deficiency, and a kind of LED device is provided, and this LED device can make full use of the emergent light of led chip substrate direction, the light extraction efficiency height.
For addressing the above problem, the technical solution adopted in the present invention is: a kind of LED device, described LED device comprises the package platforms of chip and carries chips, it is characterized in that: the angle that has 15 ° to 165 ° between the normal of the normal of described chip upper surface and package platforms upper surface.
As further improvement in the technical proposal:
Described package platforms is provided with optical table, and chip is arranged on the optical table.
The normal parallel of the normal of described chip upper surface and optical table upper surface.
The normal parallel of the normal of described optical table upper surface and package platforms upper surface.
Described package platforms is provided with the first optical concentration reflection cavity, and the inwall of the first optical concentration reflection cavity is provided with first optical reflectance coating.
Described package platforms is provided with first groove.
Described package platforms is provided with the first optical concentration reflection cavity, and the inwall of the first optical concentration reflection cavity is provided with first optical reflectance coating, and first groove is arranged in the first optical concentration reflection cavity.
Described optical table is provided with the second optical concentration reflection cavity, and the inwall of the second optical concentration reflection cavity is provided with second optical reflectance coating.
Described optical table is provided with second groove.
Described optical table is provided with the second optical concentration reflection cavity, and the inwall of the second optical concentration reflection cavity is provided with second optical reflectance coating, and second groove is arranged in the second optical concentration reflection cavity.
The cross sectional shape of the described second optical concentration reflection cavity is trapezoidal, hyperbolical, back taper, semicircle or broken line shape.
The cross sectional shape of the described first optical concentration reflection cavity is trapezoidal, hyperbolical, back taper, semicircle or broken line shape.
Described angle is 90 °.
Described optical table is made with optically transparent material.
Described transparent material is a kind of in glass, PA, PC or the sapphire.
Described optical table is made with Heat Conduction Material.
Described Heat Conduction Material is at least a in a kind of or carborundum, silicon nitride, boron oxide in silicon, aluminium, copper, the boron.
Described optical table is made with the heat conduction optically transparent material.
Described heat conduction optically transparent material is a sapphire.
The present invention takes above technical scheme, compared with prior art, have the following advantages: the angle that has 15 ° to 165 ° between the normal of the normal of led chip upper surface and package platforms upper surface, the light of directive substrate lower surface is directly overflowed, thereby realize making full use of of chip lower surface emergent light, improved the light extraction efficiency of led chip, compared with the blue-light LED chip of traditional approach, light emission rate improves more than 20%.
The setting of groove has strengthened fixed effect.
The setting of optical concentration reflection cavity makes the directivity of light stronger.
With the optical table that silicide, boride are made, its conductive coefficient surpasses 150W/mK, and the heat that led chip produces will be by the optical table bottom surface of promptly leading, thereby reduces the working temperature of chip; Simultaneously the LED substrate is close with silicide optical table thermal coefficient of expansion, and thermal stress is mated, and structure is stablized this more and helped prolonging led chip useful life.
The invention will be further described below in conjunction with drawings and Examples.
Description of drawings
Accompanying drawing 1 is the structural representation of rectangle blue-light LED chip in the prior art;
Accompanying drawing 2 is structural representations of conventional package chip;
Accompanying drawing 3 is structural representations of non-parallel packaged LED device in the embodiment of the invention 1;
Accompanying drawing 4 is structural representations of non-parallel packaged LED device in the embodiment of the invention 2;
Accompanying drawing 5 is structural representations of non-parallel packaged LED device in the embodiment of the invention 3;
Accompanying drawing 6 is structural representations of LED device in the embodiment of the invention 4;
Accompanying drawing 7 is structural representations of LED device in the embodiment of the invention 5;
Accompanying drawing 8 is structural representations of LED device in the embodiment of the invention 6;
Accompanying drawing 9 is another kind of structural representations of LED device in the embodiment of the invention 1;
Accompanying drawing 10 is another kind of structural representations of a kind of LED device in the embodiment of the invention 2;
Accompanying drawing 11 is structural representations of LED device in the embodiment of the invention 7;
Accompanying drawing 12 is accompanying drawing 11 right views;
Accompanying drawing 13 is structural representations of LED device in the embodiment of the invention 8;
Accompanying drawing 14 is structural representations of LED device in the embodiment of the invention 9;
Accompanying drawing 15 is structural representations of LED device in the embodiment of the invention 10;
Accompanying drawing 16 is structural representations of LED device in the embodiment of the invention 11;
Accompanying drawing 17 is structural representations of LED device in the embodiment of the invention 12;
Accompanying drawing 18 is another kind of structural representations of LED device in the embodiment of the invention 7;
Accompanying drawing 19 is another kind of structural representations of LED device in the embodiment of the invention 8;
Accompanying drawing 20 is structural representations of LED device in the embodiment of the invention 13;
Accompanying drawing 21 is structural representations of LED device in the embodiment of the invention 14;
Accompanying drawing 22 is structural representations of LED device in the embodiment of the invention 15;
Accompanying drawing 23 is structural representations of LED device in the embodiment of the invention 16;
Accompanying drawing 24 is structural representations of LED device in the embodiment of the invention 17;
Accompanying drawing 25 is structural representations of LED device in the embodiment of the invention 18;
Accompanying drawing 26 is another kind of structural representations of LED device in the embodiment of the invention 13;
Accompanying drawing 27 is another kind of structural representations of LED device in the embodiment of the invention 14;
Accompanying drawing 28 is structural representations of LED device in the embodiment of the invention 19;
Accompanying drawing 29 is another kind of structural representations of LED device in the embodiment of the invention 19;
Accompanying drawing 30 is structural representations of LED device in the embodiment of the invention 20;
Accompanying drawing 31 is another kind of structural representations of LED device in the embodiment of the invention 20.Among the figure,
The 1-substrate, 2-GaN semiconductor buffer layer, 3-n type Al
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) semiconductor layer, 4-GaN/In
yGa
1-yN (0≤y≤1) quantum well structure light-emitting layer, 5-p type Al
xIn
yGa
1-x-yN (0≤x≤1,0≤y≤1) semiconductor layer, 6-first groove, 7-first optical reflectance coating, 8-second optical reflectance coating, 9-electrode, the 10-package platforms, 11-chip, 12-optical table, 13-optical table electrode, 14-spun gold, 15-transparent region, 16-package platforms electrode, 17-elargol solder joint, the 18-first optical concentration reflection cavity, the 19-second optical concentration reflection cavity, 21-second groove.
Specific embodiment
Embodiment 1, as shown in Figure 3, a kind of LED device, comprise package platforms 10, the upper surface of package platforms 10 is the plane, and chip 11 is fixed on the upper surface of package platforms 10, and the normal direction angle of the normal direction of chip 11 upper surfaces and package platforms 10 upper surfaces is θ, the electrode 9 of chip 11 is connected by spun gold 14 with the package platforms electrode 16 of package platforms 10, and package platforms electrode 16 is connected with drive circuit.
As shown in Figure 9, the another kind of structure of non-parallel packaged LED device among the embodiment 1, package platforms 10 is provided with first groove 6, and chip 11 is fixed in first groove 6, and all the other structures are identical with the structure of LED device among the embodiment 1, and fixed effect is better.
As shown in figure 10, the another kind of structure of non-parallel packaged LED device among the embodiment 2 is provided with first groove 6 in the bottom of the first optical concentration reflection cavity 18, chip 11 is fixed in first groove 6, all the other structures are identical with the structure of LED device among the embodiment 2, and fixed effect is better.
Embodiment 3, and as shown in Figure 5, a kind of LED device, the cross sectional shape of the first optical concentration reflection cavity 18 are hyperbolical, and remaining structure is identical with the structure of LED device among the embodiment 2.
Embodiment 4, and as shown in Figure 6, a kind of LED device, the cross sectional shape of the first optical concentration reflection cavity 18 are back taper, and remaining structure is identical with the structure of LED device among the embodiment 2.
Among the embodiment 1 to embodiment 6, angle theta can change between 15 ° to 165 °, package platforms 10 can but be not limited to various aluminium, copper, aluminium oxide ceramics, PA, plastics separately or mixing manufacture form, package platforms 10 is used for being connected with external circuit, plays fixing, heat conduction, conduction and interconnect function.
Among the embodiment 3-embodiment 6, also can groove be set in the bottom of optical concentration reflection cavity, chip 11 is fixed in the groove, and fixed effect is better.
The LED device of LED device and conventional package among the embodiment 1 to embodiment 6 is compared test, adopt spherical integrator to determine luminous power, what obtain goes out luminous power amplification (%) data such as following table:
From above data as can be seen, the luminous power amplification that goes out of LED device increases from 15 ° to 90 ° gradually with angle, reduces gradually from 90 ° to 165 ° with angle, and is the highest in the time of 90 °; After the first optical concentration reflection cavity 18 is set, the LED device go out luminous power amplification be provided with before the first optical concentration reflection cavity 18 to go out luminous power amplification difference little, but after the first optical concentration reflection cavity 18 was set, the directivity of LED device emergent light was better.
As shown in figure 18, the another kind of structure of non-parallel packaged LED device among the embodiment 7, package platforms 10 is provided with first groove 6, and optical table 12 is fixed in first groove 6, and all the other structures are identical with the structure of LED device among the embodiment 7, and fixed effect is better.
As shown in figure 19, the another kind of structure of non-parallel packaged LED device among the embodiment 8 is provided with first groove 6 in the bottom of the first optical concentration reflection cavity 18, optical table 12 is fixed in first groove 6, all the other structures are identical with the structure of LED device among the embodiment 8, and fixed effect is better.
Among the embodiment 9 to embodiment 12, also can groove be set in the bottom of optical concentration reflection cavity, optical table 12 is fixed in the groove, and fixed effect is better.
Among the embodiment 7 to embodiment 12, angle theta can change between 15 ° to 165 °, package platforms 10 can but be not limited to various aluminium, copper, aluminium oxide ceramics, PA, plastic or other material separately or mixing manufacture form, optical table 12 can also be made with other optically transparent material or heat conduction optically transparent material, package platforms 10 is used for being connected with external circuit, plays fixing, heat conduction, conduction and interconnect function.
In embodiment 7 to embodiment 12, the LED device of above LED device and conventional package compares test, adopts spherical integrator to determine luminous power, and what obtain goes out luminous power amplification (%) data such as following table:
From above data as can be seen, the luminous power amplification that goes out of LED device increases from 15 ° to 90 ° gradually with angle, reduces gradually from 90 ° to 165 ° with angle, and is the highest in the time of 90 °; After the first optical concentration reflection cavity 18 is set, the LED device go out luminous power amplification be provided with before the first optical concentration reflection cavity 18 to go out luminous power amplification difference little, but after the first optical concentration reflection cavity 18 was set, the directivity of LED device emergent light was better.
As shown in figure 26, the another kind of structure of non-parallel packaged LED device among the embodiment 13, optical table 12 is provided with second groove 21, and chip 11 is fixed in second groove 21, and all the other structures are identical with the structure of LED device among the embodiment 13, and fixed effect is better.
Embodiment 14, as shown in figure 21, a kind of LED device, comprise package platforms 10, package platforms 10 is provided with optical table 12, optical table 12 usefulness boron oxides are made, the normal direction of optical table 12 is parallel with the surface normal direction of package platforms 10, optical table 12 is provided with the second optical concentration reflection cavity 19, the cross sectional shape of the second optical concentration reflection cavity 19 can be for trapezoidal, be coated with second optical reflectance coating 8 of high reflectance on the inwall of the second optical concentration reflection cavity 19, chip 11 is arranged on the bottom of the second optical concentration reflection cavity 19, and the normal direction of chip 11 upper surfaces and optical table 12 normal to a surface angular separations are θ, chip 11 is provided with electrode 9, package platforms 10 is provided with package platforms electrode 16, is connected with spun gold 14 between package platforms electrode 16 and the electrode 9, and package platforms electrode 16 is connected with drive circuit.The conductive coefficient of boron oxide surpasses 150W/mK, and the heat that led chip produces will be by the optical table bottom surface of promptly leading, thereby reduces the working temperature of chip; Simultaneously the LED substrate is close with boron oxide optical table thermal coefficient of expansion, and thermal stress is mated, and helps prolonging led chip useful life.
As shown in figure 27, the another kind of structure of non-parallel packaged LED device among the embodiment 14 is provided with second groove 21 in the bottom of the second optical concentration reflection cavity 19, chip 11 is fixed in second groove 21, all the other structures are identical with the structure of LED device among the embodiment 14, and fixed effect is better.
Among the embodiment 15 to embodiment 18, also can groove be set in the bottom of optical concentration reflection cavity, chip 11 is fixed in the groove, and fixed effect is better.
Among the embodiment 13 to embodiment 18, angle theta can change between 15 ° to 165 °, package platforms 10 can but be not limited to various aluminium, copper, aluminium oxide ceramics, PA, plastic or other material separately or mixing manufacture form, optical table 12 can also with but be not limited to Heat Conduction Materials such as silicon, copper, boron or its compound carborundum, silicon nitride, boron oxide separately or be mixed and made into, can also with but be not limited to optically transparent materials such as PA, PC or the heat conduction optically transparent material is made, package platforms 10 is used for being connected with external circuit, plays fixing, heat conduction, conduction and interconnect function.
The LED device of LED device and conventional package among the embodiment 13 to embodiment 18 is compared test, adopt spherical integrator to determine luminous power, what obtain goes out luminous power amplification (%) data such as following table:
From above data as can be seen, the luminous power amplification that goes out of LED device increases from 15 ° to 90 ° gradually with angle, reduces gradually from 90 ° to 165 ° with angle, and is the highest in the time of 90 °; After the second optical concentration reflection cavity 19 is set, the LED device go out luminous power amplification be provided with before the second optical concentration reflection cavity 19 to go out luminous power amplification difference little, but after the second optical concentration reflection cavity 19 was set, the directivity of LED device emergent light was better.
As shown in figure 29, the another kind of structure of non-parallel packaged LED device among the embodiment 19 is provided with first groove 6 in the bottom of the first optical concentration reflection cavity 18, optical table 12 is fixed in first groove 6, all the other structures are identical with the structure of LED device among the embodiment 19, and fixed effect is better.
Embodiment 20, as shown in figure 30, a kind of LED device, comprise package platforms 10, package platforms 10 is provided with the cross sectional shape of the first optical concentration reflection cavity, 18, the first optical concentration reflection cavities 18 for trapezoidal, be coated with first optical reflectance coating 7 of high reflectance on the inwall of the first optical concentration reflection cavity 18, the bottom of the first optical concentration reflection cavity 18 is provided with optical table 12, and optical table 12 usefulness glass materials are made, and all the other structures are identical with the structure of LED device among the embodiment 14.
As shown in figure 31, the another kind of structure of non-parallel packaged LED device among the embodiment 20, be provided with first groove 6 in the bottom of the first optical concentration reflection cavity 18, optical table 12 is fixed in first groove 6, the bottom of the second optical concentration reflection cavity 19 is provided with second groove 21, chip 11 is fixed in second groove 21, and all the other structures are identical with the structure of LED device among the embodiment 20, and fixed effect is better.
Among embodiment 19, the embodiment 20, angle theta can change between 15 ° to 165 °, package platforms 10 can but be not limited to various aluminium, copper, aluminium oxide ceramics, PA, plastic or other material separately or mixing manufacture form, optical table 12 can also with but be not limited to Heat Conduction Materials such as silicon, copper, boron or its compound carborundum, silicon nitride, boron oxide separately or be mixed and made into, can also with but be not limited to optically transparent materials such as PA, PC or the heat conduction optically transparent material is made, package platforms 10 is used for being connected with external circuit, plays fixing, heat conduction, conduction and interconnect function.
The LED device of LED device and conventional package among embodiment 19, the embodiment 20 is compared test, adopt spherical integrator to determine luminous power, what obtain goes out luminous power amplification (%) data such as following table:
From above data as can be seen, the luminous power amplification that goes out of LED device increases from 15 ° to 90 ° gradually with angle, reduces gradually from 90 ° to 165 ° with angle, and is the highest in the time of 90 °; After the first optical concentration reflection cavity 18 is set, the LED device go out luminous power amplification be provided with before the first optical concentration reflection cavity 18 to go out luminous power amplification difference little, but after the first optical concentration reflection cavity 18 was set, the directivity of LED device emergent light was better.
The cross sectional shape of optical concentration reflection cavity used in the present invention can also be but is not limited to the figure that parabola shaped, shaped form etc. has the optical concentration effect except shapes such as employed trapezoidal, the hyperbolical of embodiment, back taper, semicircle or broken line shape
Among embodiment 14 to embodiment 18 and the embodiment 20, also can on optical table 12, erode away the reflection cavity dot matrix, connect by circuit between dot matrix, then led chip be placed each reflection cavity of dot matrix, thereby form multicore sheet illumination module or mould bar.
Among the above embodiment, reflectance coating can by but the metal material such as aluminium, silver that is not limited to visible light is had high reflectance make by methods such as thermal evaporation, electron beam evaporation, sputters, or with materials such as the silicon dioxide with different refractivity, silicon, magnesium fluorides by make the DBR highly reflecting films by methods such as thermal evaporation, electron beam evaporation, sputters, also can add high reflectance metals such as aluminium, silver when making the DBR highly reflecting films with lifting reflectance spectrum spectrum width.
Claims (19)
1. LED device, described LED device comprises the package platforms (10) of chip (11) and carries chips (11), it is characterized in that: the angle that has 15 ° to 165 ° between the normal of the normal of described chip (11) upper surface and package platforms (10) upper surface.
2. a kind of LED device as claimed in claim 1 is characterized in that: described package platforms (10) is provided with optical table (12), and chip (11) is arranged on the optical table (12).
3. a kind of LED device as claimed in claim 2 is characterized in that: the normal parallel of the normal of described chip (11) upper surface and optical table (12) upper surface.
4. a kind of LED device as claimed in claim 2 is characterized in that: the normal parallel of the normal of described optical table (12) upper surface and package platforms (10) upper surface.
5. as one of them described a kind of LED device of claim 1-4, it is characterized in that: described package platforms (10) is provided with the first optical concentration reflection cavity (18), and the inwall of the first optical concentration reflection cavity (18) is provided with first optical reflectance coating (7).
6. as one of them described a kind of LED device of claim 1-4, it is characterized in that: described package platforms (10) is provided with first groove (6).
7. a kind of LED device as claimed in claim 6, it is characterized in that: described package platforms (10) is provided with the first optical concentration reflection cavity (18), the inwall of the first optical concentration reflection cavity (18) is provided with first optical reflectance coating (7), and first groove (6) is arranged in the first optical concentration reflection cavity (18).
8. a kind of LED device as claimed in claim 4 is characterized in that: described optical table (12) is provided with the second optical concentration reflection cavity (19), and the inwall of the second optical concentration reflection cavity (19) is provided with second optical reflectance coating (8).
9. a kind of LED device as claimed in claim 4 is characterized in that: described optical table (12) is provided with second groove (21).
10. a kind of LED device as claimed in claim 9, it is characterized in that: described optical table (12) is provided with the second optical concentration reflection cavity (19), the inwall of the second optical concentration reflection cavity (19) is provided with second optical reflectance coating (8), and second groove (21) is arranged in the second optical concentration reflection cavity (19).
11. as claim 8 or 10 described a kind of LED devices, it is characterized in that: the cross sectional shape of the described second optical concentration reflection cavity (19) is trapezoidal, hyperbolical, back taper, semicircle or broken line shape.
12. a kind of LED device as claimed in claim 5 is characterized in that: the cross sectional shape of the described first optical concentration reflection cavity (18) is trapezoidal, hyperbolical, back taper, semicircle or broken line shape.
13. a kind of LED device as claimed in claim 1 is characterized in that: described angle is 90 °.
14. as claim 3 or 4 described a kind of LED devices, it is characterized in that: described optical table (12) is made with optically transparent material.
15. a kind of LED device as claimed in claim 14 is characterized in that: described transparent material is a kind of in glass, PA, PC or the sapphire.
16. a kind of LED device as claimed in claim 4 is characterized in that: described optical table (12) is made with Heat Conduction Material.
17. a kind of LED device as claimed in claim 16 is characterized in that: described Heat Conduction Material is at least a in a kind of or carborundum, silicon nitride, boron oxide in silicon, aluminium, copper, the boron.
18. as claim 3 or 4 described a kind of LED devices, it is characterized in that: described optical table (12) is made with the heat conduction optically transparent material.
19. a kind of LED device as claimed in claim 18 is characterized in that: described heat conduction optically transparent material is a sapphire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102533746A CN101969093A (en) | 2010-08-16 | 2010-08-16 | Light-emitting diode element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010102533746A CN101969093A (en) | 2010-08-16 | 2010-08-16 | Light-emitting diode element |
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| CN101969093A true CN101969093A (en) | 2011-02-09 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102306696A (en) * | 2011-09-23 | 2012-01-04 | 李光 | Light-emitting semiconductor chip support with holes |
| CN102820404A (en) * | 2011-06-08 | 2012-12-12 | Lg伊诺特有限公司 | Light-emitting diode package |
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| CN1189702A (en) * | 1996-12-27 | 1998-08-05 | 夏普公司 | Light emitting display element, method for connecting same to electric wiring substrate and method of manufacturing same |
| US20080093607A1 (en) * | 2006-10-23 | 2008-04-24 | Hong Kong Applied Science and Technology Research Institute Company Limited | Light emitting diode device, method of fabrication and use thereof |
| CN101276873A (en) * | 2007-03-30 | 2008-10-01 | 夏普株式会社 | Light emitting device and method of producing the same |
| CN201754415U (en) * | 2010-08-16 | 2011-03-02 | 中微光电子(潍坊)有限公司 | An LED device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1189702A (en) * | 1996-12-27 | 1998-08-05 | 夏普公司 | Light emitting display element, method for connecting same to electric wiring substrate and method of manufacturing same |
| US20080093607A1 (en) * | 2006-10-23 | 2008-04-24 | Hong Kong Applied Science and Technology Research Institute Company Limited | Light emitting diode device, method of fabrication and use thereof |
| CN101276873A (en) * | 2007-03-30 | 2008-10-01 | 夏普株式会社 | Light emitting device and method of producing the same |
| CN201754415U (en) * | 2010-08-16 | 2011-03-02 | 中微光电子(潍坊)有限公司 | An LED device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820404A (en) * | 2011-06-08 | 2012-12-12 | Lg伊诺特有限公司 | Light-emitting diode package |
| US9349923B2 (en) | 2011-06-08 | 2016-05-24 | Lg Innotek Co., Ltd. | Light-emitting diode package |
| CN102820404B (en) * | 2011-06-08 | 2017-03-01 | Lg伊诺特有限公司 | LED package |
| CN102306696A (en) * | 2011-09-23 | 2012-01-04 | 李光 | Light-emitting semiconductor chip support with holes |
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Application publication date: 20110209 |