CN101916754A - Through-hole, through-hole forming method and through-hole filling method - Google Patents

Through-hole, through-hole forming method and through-hole filling method Download PDF

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CN101916754A
CN101916754A CN 201010222721 CN201010222721A CN101916754A CN 101916754 A CN101916754 A CN 101916754A CN 201010222721 CN201010222721 CN 201010222721 CN 201010222721 A CN201010222721 A CN 201010222721A CN 101916754 A CN101916754 A CN 101916754A
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hole
device
surface
portion
layer
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CN 201010222721
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Chinese (zh)
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CN101916754B (en
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史训清
徐逸杰
杨丹
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香港应用科技研究院有限公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16135Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS

Abstract

The invention discloses a through-hole, a through-hole forming method and a through-hole filling method. An electronic or micromechanical device is provided with a first surface (11), a second surface (12) and one through-hole. The through-hole extends from the first surface and passes through the device to the second surface, and comprises a first part (84, 86), a second part (82) and a third part (88) which are integrally molded, wherein the first part (84, 86) extends from the first surface (11) to the second surface (12); the second part (82) extends and covers a part of the first surface (11) of the device; and the third part (88) extends and covers a part of the second surface (12) of the device. Preferably, the first part comprises a first component and a second component, and the second component extends and passes through an active region of the device, and the width of the second component is narrower than that of the first component. Meanwhile, the invention also discloses a method for forming and filling the through-hole.

Description

通孔和通孔形成方法以及通孔填充方法 The method of vias and through holes are formed and a through hole filling method

【技术领域】 TECHNICAL FIELD

[0001] 本发明涉及通孔和通孔形成方法以及通孔填充方法,特别涉及但不限于一种硅通孔(TSV)。 [0001] The present invention relates to a method of forming vias and through holes and vias filling method, and more particularly, but not limited to, one through silicon via (TSV).

【背景技术】 【Background technique】

[0002] 电子器件,特别是便携式器件如移动电话,正变得越来越小型化,但同时又能够提供越来越广泛的功能,有需要集成多功能芯片,又不增加器件的尺寸,保持较小的外观尺寸。 [0002] Electronic devices, particularly portable devices such as mobile telephones, are becoming more compact, but at the same time able to provide more extensive features, there is a need multifunction integrated chip, without increasing the size of the device, holding the appearance of small size. 在一个2D结构里,增加电子元件数目必将增加尺寸,达不到这些目的,因此,3D封装被日益采用,以便能够提供更多的功能性和更高的元件密度,但具有较小的外观尺寸。 In a 2D structure, the increase in the number of electronic components will increase in size, reach these purposes, therefore, 3D packages are increasingly employed to provide more functionality and higher density of components, but with a smaller appearance size.

[0003] 在一个3D结构里,电子元器件,如具有各种有源IC器件的半导体芯片,可能是多层叠层结构。 [0003] In a 3D structure, the electronic component such as a semiconductor chip having various active IC devices, may be a multilayer laminate structure. 传统上,使用引线键合(如美国专利6,933,172)来建立芯片之间的电互连,但引线键合(wire bonding)需要较大的平面内尺寸(in-plane size)和平面外尺寸(out-of-plane size),与最大化元件密度的目标不一致。 Conventionally, wire bonding (e.g., U.S. Patent No. 6,933,172) to establish electrical interconnection between the chip, the wire bonding (wire bonding) require larger dimensions (in-plane size) plane and a plane the outer dimension (out-of-plane size), is inconsistent with the goal of maximizing the density element. 为了电连接在不同层里的元件, 硅通孔(TSV)技术可以被用来提供电互连,并提供机械支撑。 In order to connect the electrical elements in different layers in the silicon vias (TSV) techniques may be used to provide electrical interconnections and to provide mechanical support. 在TSV技术里,在一个具有不同有源IC器件或其它器件的硅芯片上,制作一个通孔,并在此通孔内填充金属如铜、金、 钨、焊料、或一种高掺杂的半导体材料如多晶硅。 In the TSV technology, in the silicon chip with a different active IC devices, or other devices to produce a through-hole, and this through-hole filling a metal such as copper, gold, tungsten, solder, or a highly doped semiconductor materials such as polysilicon. 因此,TSV能够连接元件顶表面上的键合焊盘和元件底表面上的键合焊盘。 Accordingly, TSV linkage is possible on the top surface of the bonding element bonding pads on the bottom surface of the pad and the element. 因此,具有这种通孔的多个元件被叠层并被键合在一起。 Thus, a plurality of elements having such through holes are laminated and bonded together. 另外重要的是,电子器件的电路径可以被缩短,从而导致更快的运行速度。 It is also important that the electrical paths of the electronic device can be shortened, resulting in faster operating speeds.

[0004] 尽管TSV频繁地应用到电子元件中,但它们也可以应用到微机械元件中,如MEMS 器件。 [0004] Although TSV frequently applied to the electronic component, they may be applied to a micromechanical element, such as a MEMS device.

[0005] 图1 (a)到(g)显示形成一个用于NAND闪存晶圆的TSV的传统方法的步骤。 [0005] FIG. 1 (a) to (g) show the step of forming a conventional method for TSV wafer of a NAND flash memory.

[0006] 在图1 (a)的步骤,提供一个电子器件(在该例子里是一个存储器晶圆)。 [0006] In the step of FIG. 1 (a), there is provided an electronic device (in this example, where memory is a wafer). 晶圆有第一“上”表面11和与第一表面相反的第二“下”表面12。 A first wafer "upper" surface 11 and a second surface of the first "lower" surface 12 opposite. 晶圆包括晶圆上部分的一个硅区域20和晶圆下部分的一个活性区域30。 Wafer includes a silicon active region of a lower portion of the upper portion 20 of the wafer 30 and wafer region. 活性区域包括一个焊盘40。 Active region 40 comprising a pad. 更具体地,在所述例子里,活性区域40包括多个电迹线(electrical trace)和/或导电线,其被嵌入在硅区域20和焊盘40之间的隔离层(如氧化硅)34内。 More specifically, in the case, comprising a plurality of electrical traces 40 (electrical trace) and / or a conductive wire active region, which is embedded in the silicon region between the pad 20 and release layer 40 (such as silica) 34 inside. 在所述例子里,活性区域30包括多个介质线(dielectic line) 32、多晶硅线36、和M4线38,其被嵌入在硅层20和焊盘40之间的硅氧化物隔离层34内。 In the example, the active region 30 comprises a plurality of dielectric lines (dielectic line) 32, a polysilicon line 36, line 38 and M4, which are embedded in the silicon oxide isolation layer between the silicon layer 20 and the pad 40 34 . 焊盘是由金属形成,并有多个突出部分39,其向上突出到硅氧化物区内。 Pad is formed of metal and has a plurality of protruding portions 39 which protrude upwardly into the silicon oxide region. 突出部分39可以有特别的结构,在所述例子里,这些向上突出的部分是T型,T的交叉点是在焊盘的远端。 Projecting portion 39 may have a special configuration, in the case, the upwardly projecting portion is T-shaped, T is the intersection of the distal end of the pad.

[0007] 图1(b)到(f)描述形成通孔的方法。 [0007] FIG. 1 (b) to (f) described a method of forming a through hole. 在图1(b)的步骤里,添加一层光刻胶层50 以保护不被蚀刻的器件部件,通过蚀刻去除一部分硅层20和一部分多晶硅层32。 In the step of FIG. 1 (b) in the added layer of photoresist layer 50 to protect the device being etched member, removing a portion of the silicon layer 20 and a portion of the polysilicon layer 32 by etching. 在图1 (c) 的步骤里,通过蚀刻去除一部分隔离层34。 In the step of FIG. 1 (c) is, through a portion of the isolation layer 34 is etched away. 在图1(d)的步骤里,通过蚀刻去除一部分阻隔金属层M4。 In the step of FIG. 1 (d) in the barrier metal layer M4 by removing a portion of etching. 在图1(e)的步骤里,通过蚀刻去除一部分硅氧化物隔离层。 In the step of FIG. 1 (e) is, the portion of the silicon oxide is removed by etching the isolation layer. 如图1(b)到(e) 所示,不同层在不同的蚀刻步骤里被去除。 FIG 1 (b) to (e), except in a different layer is removed in the etching step. 由于去除的材料是不同的,因此需要不同的蚀刻过程。 Due to removal of material it is different, requiring a different etching process. 此外,在每个步骤里,蚀刻宽度几乎是相同的,从而通孔有一个几乎一致的宽度。 Further, in each step, the etching is almost the same width, so that the through hole has an almost uniform width. 完全形成的通孔60如图1(e)所示。 The through hole 60 is formed entirely shown in Figure 1 (e). 其从器件顶表面11向下延伸到焊盘40,有一个均勻的宽度或直径。 Extending from the top surface of the device 11 down to the pads 40, we have a uniform width or diameter. 但是,通孔60不会延伸穿过焊盘40。 However, the through hole 60 does not extend through the pad 40.

[0008] 在图1 (f)的步骤里,一个包含介质材料的隔离层70被沉积在通孔60内部。 Spacer layer [0008] In the step of FIG. 1 (f) is, the medium comprising a material 70 is deposited inside the through hole 60. 隔离层70覆盖通孔的内侧壁,并覆盖硅层20的顶表面11。 Spacer layer 70 covers the sidewall of through-holes, and covers the top surface 11 of silicon layer 20. 在图1(g)的步骤里,进行电镀以在通孔内填充金属82、84,通常该金属可能是铜。 In the step of FIG. 1 (g) of, the plating metal is filled in the through hole 82, which typically may be metallic copper. 金属层82、84是实心的,并形成一个T型。 82, 84 is a solid metal layer, and forming a type T. 其包括通孔内的一个垂直部分84和延伸在器件顶表面11上方的一个水平或“交叉”部分82。 Which includes a through-hole 84 and a vertical portion extending above the top surface of the device 11 is a horizontal or "crossover" portion 82. 电镀金属84的垂直部分的底部与焊盘40机械连接和电连接,但没有与焊盘整体成形。 The bottom of the pad 84 of the vertical portion 40 of the plated metal mechanical and electrical connection, but not integrally formed with the pad. 即通孔没有延伸穿过焊盘40,且没有到达器件的第二表面12。 I.e., the through hole does not extend through the pad 40, and does not reach the second surface 12 of the device. 尽管焊盘40和电镀层82、84 都是由铜制成,但它们不是整体的。 Although pads 40 and plating layers 82 and 84 are made of copper, but they are not integral. 它们是分开的部件,由不同制作方法形成的具有不同晶粒结构的独立部件(因为焊盘40不是通过电镀形成的)。 They are separate parts, individual components have different grain structure formed by different production methods (since the pad 40 is not formed by electroplating).

[0009] 用以上方法形成TSV是一个耗时过程,因为需要在几个不同的步骤里进行蚀刻。 [0009] TSV is formed by the above method is a time-consuming process, because it requires several etching steps in. 而且,一些蚀刻步骤应该在不同腔室内或在抽空房间后进行,以避免出现污染。 Furthermore, some or after the etching step should be carried out in different rooms evacuation chamber to avoid contamination. 这样会增加方法的复杂性和所需时间,从而增加制造成本。 This increases the complexity and time required for the process, thereby increasing manufacturing costs. 此外,上述方法不可能总是牢固地将电镀层82,84附着到焊盘或通孔侧壁。 Further, the above-described method can not always be securely attached to the pads 82, 84 a plating layer or via sidewalls. 因而,如果在制作或使用过程中对器件施加压力,会出现问题。 Thus, if pressure is applied to the device during use or in the production, the problem occurs. 所以,期望能够找到更快捷且更有成本效益的形成通孔方法,并且该方法还能够保证器件的机械完整性。 Therefore, it is desirable to find a more efficient method of forming vias and more cost-effective, and which further ensures the mechanical integrity of the device.

[0010]【发明概述】 [0010] [Summary of the Invention]

[0011] 本发明的第一方面是提供一种电子或微机械器件,其有第一和第二表面以及一个通孔,该通孔从第一表面延伸穿过该器件到第二表面,通孔通常是I型。 [0011] In a first aspect of the present invention is to provide an electronic or micro-mechanical device, which has first and second surfaces and a through-hole, the through hole extending through from a first surface to a second surface of the device, through holes are typically type I. 通孔的I型特征有助于扣紧该通孔到器件。 Type I features a through hole through holes contribute to the fastening device.

[0012] 优选地,通孔包括一整体成型的导电材料(如金属)层。 [0012] Preferably, the through-hole includes a conductive material integrally formed (e.g., metal) layers. 在通孔顶部,在器件的第二表面上方,可以有另一导电层,在通孔和另一导电层之间可以有一阻隔层。 At the top of the through hole, the second upper surface of the device, there may be another conductive layer, between the through hole and the other conductive layer may have a barrier layer. I型(或另一导电层)的顶部和底部可以形成电接触,用于连接该器件和该器件上方或下方的另一器件。 Type I (or another conductive layer) may be formed in the top and bottom electrical contacts, for another device below or above the device and connected to the device. 焊料可以添加在接触顶部。 Solder may contact with the top added.

[0013] 本发明的第二方面是提供一种电子或微机械器件,其有第一和第二表面以及一个通孔,该通孔从第一表面延伸穿过该器件到第二表面,通孔包括整体成形的第一、第二和第三部分,第一部分从第一表面延伸到第二表面,第二部分延伸覆盖在器件的一部分第一表面上,第三部分延伸覆盖在器件的一部分第二表面上。 [0013] A second aspect of the present invention is to provide an electronic or micro-mechanical device, which has first and second surfaces and a through-hole, the through hole extending through from a first surface to a second surface of the device, through first, second and third portions, the first portion extending from a first surface to a second surface, the second portion extending over the portion of the first surface of the device, a third portion extending over the device hole includes integrally formed on the second surface. 这种构造有助于扣紧通孔到该器件。 This configuration contributes to the fastening device through holes.

[0014] 因此,通孔包括一整体成形的导电层。 [0014] Thus, the through-hole includes a conductive layer formed integrally. 在通孔顶部,在通孔第一部分的上方,可以有另一导电层,在通孔和另一导电层之间可以有一阻隔层。 At the top of the through hole over a first portion of the through hole, there may be another conductive layer, between the through hole and the other conductive layer may have a barrier layer.

[0015] 通孔的第二和第一部分(或另一导电层)可以形成电接触,用于连接该器件和该器件上方或下方的另一个器件。 A first and a second portion (or another conductive layer) [0015] The through hole may be formed in electrical contact means for connecting the other above or below the device and the device. 焊料可以添加在接触顶部。 Solder may contact with the top added.

[0016] 通孔还可以包括一个或多个阻隔层、填料层、溅射金属层和介质层,每层都延伸穿过器件的非活性区域和至少部分活性区域。 [0016] The vias may also include one or more barrier layers, the filler layer, a sputtered metal and dielectric layers, each layer extending through the non-active region of the device and at least portion of the active region.

[0017] 本发明的第三方面是提供一种形成通孔的方法,该通孔延伸穿过一个具有第一表面和第二表面的电子或微机械器件,本方法包括:形成一个通孔,其从第一表面延伸穿过器件到第二表面;进行电镀以添加一整体成形的金属层,其从所述第一表面延伸穿过所述通孔到所述第二表面;所述整体成形的金属层包括延伸覆盖器件部分所述第一表面上的一部分和延伸覆盖器件部分所述第二表面上的一部分。 [0017] The third aspect of the present invention is to provide a method for forming the through hole, the through hole extending through an electronic or micromechanical devices of the first and second surfaces having the method comprising: forming a through hole, extending from the first surface to the second surface through the device; plated metal layer to add an integrally formed, extending through the through hole to the second surface from said first surface; the integrally molded the metal layer includes a portion extending over and extend over the first portion of the device surface covering a portion of the upper surface of the second portion of the device. [0018] 本发明的第四方面是提供一种电子或微机械器件,其有第一和第二表面以及一个通孔,该通孔从第一表面延伸穿过该器件到第二表面,其中器件有一非活性层和一活性层, 其中通孔第一部分延伸穿过非活性层,通孔第二部分主要延伸穿过活性层,通孔第一部分的宽度比通孔第二部分更宽。 [0018] A fourth aspect of the present invention is to provide an electronic or micro-mechanical device, which has first and second surfaces and a through-hole, the through hole extending through from a first surface to a second surface of the device, wherein the device has a non-active layer and an active layer, wherein the first portion of the through hole extending through the non-active layer, a second through hole extending through the main portion of the active layer, the width of the first portion of the through hole is wider than the second portion of the through hole. 由于通孔第二部分更窄,这有助于降低对器件活性层的破坏。 Since the second part is narrower through hole, which helps to reduce damage to the device active layer.

[0019] 通孔的第一和/或第二部分可以是锥形的,它们在从器件第一表面到器件第二表面的方向上有一个下降宽度。 The first and / or second portion [0019] and through hole may be tapered, they have a decreased width in the direction from the first surface to the second surface of the device of the device. 这有助于在制作该器件期间使用自底而上的电镀。 This facilitates the use of plating on the bottom of the device during fabrication.

[0020] 本发明的第五方面是提供一种形成通孔的方法,该通孔延伸穿过一个电子或微机械器件,本方法包括:通过蚀刻形成通孔第一部分;以及通过激光钻孔形成通孔第二部分。 [0020] A fifth aspect of the present invention is to provide a method for forming the through hole, the through hole extending through a micromechanical or electronic device, the method comprising: a first through hole portion is formed by etching; formed by laser drilling and a second portion of the through hole. 由于仅有一个蚀刻步骤,激光仅用于第二步骤,但是不一定要完全凿穿器件,该过程相当快捷。 Since only one etching step, laser is used for the second step, but not necessarily completely cut through the device, the process is quite fast. 优选地,第二去除部分的宽度比第一部分更窄。 Preferably, the width of the second portion is narrower than the removal of the first portion.

[0021] 优选地,该器件有第一和第二相反的表面,并且优选地,通孔从第一表面延伸穿过该器件到第二表面。 [0021] Preferably, the device has first and second opposite surfaces, and preferably, the through hole extending through from the first surface to the second surface of the device. 特别地,优选地,通孔延伸穿过器件的活性区域,其可以包括一个键合焊盘。 In particular, preferably, the through hole extending through the active region of the device, which may include a bonding pad.

[0022] 本发明的第六方面是提供一叠层组件,其包括安装在第二器件顶部的第一器件, 至少一个所述第一和第二器件是符合本发明第一、第二或第四方面的器件,或符合本发明第三或第五方面制造的器件。 [0022] A sixth aspect of the present invention provides a stack assembly comprising a first device mounted on top of a second device, at least one of said first and second device is consistent with the present invention, the first, the second or the four aspects of the device, or in compliance with the manufacturing device of the third or fifth aspect of the present invention.

【附图说明】 BRIEF DESCRIPTION

[0023] 图1 (a)到(g)显示形成一个TSV的传统方法的步骤。 [0023] FIG. 1 (a) to (g) show steps of a conventional method of forming a TSV.

[0024] 图2(a)到(d)是本发明实施例的通孔的结构示意图。 [0024] FIG. 2 (a) to (d) are schematic structural diagram of an embodiment of the through hole of the present invention.

[0025] 图3详细显示一个通孔。 [0025] FIG. 3 is shown in detail a through hole.

[0026] 图4(a)到(d)显示本发明各种实施例的通孔下部分的截面图。 [0026] FIG. 4 (a) to (d) show various cross-sectional view of a portion of the present invention, in one embodiment of the through hole.

[0027] 图5到19显示形成图3通孔的方法的步骤;和 [0027] FIGS. 5-19 show steps of a method for forming a through hole in FIG. 3; and a

[0028] 图20显示本发明一个实施例的一对具有通孔的叠层器件。 [0028] FIG. 20 shows a laminated device having one pair of through holes according to an embodiment of the present invention.

[0029]【发明详述】 [0029] [Detailed Description of the Invention

[0030] 图2(a)到(d)是本发明实施例的通孔的结构示意图。 [0030] FIG. 2 (a) to (d) are schematic structural diagram of an embodiment of the through hole of the present invention. 通孔延伸穿过一个基板。 A via extending through the substrate. 基板可以是一个电子器件或一个机械器件。 The substrate may be an electronic device or a mechanical device. 例如,器件可以是一个存储器芯片、一个处理器或一个MEMs器件,但本发明并不受限于这些范例。 For example, the device may be a memory chip, a processor or a MEMs device, but the present invention is not limited to these examples. 基板通常包含硅。 The substrate typically comprises silicon.

[0031] 通孔从第一表面11延伸穿过基板到一个相反的第二表面12。 [0031] The through hole 11 extending through the substrate from the first surface to a second surface 12 opposite. 通孔通常是I型。 Vias are typically type I. 其包括一个金属层,有通过电镀整体形成的第一部分84、86、第二部分82和第三部分88。 Which includes a metal layer, a first portion 84, 86 integrally formed by plating, a second portion 82 and third portion 88. 第二部分82延伸覆盖在基板第一表面11上方。 Extending the second portion 82 overlies the first surface of the substrate 11. 第一部分84、86延伸穿过基板,第三部分88延伸在基板第二表面上方。 The first portions 84, 86 extending through the substrate, the third portion 88 extends over the second surface of the substrate. 由于通孔的三个部分整体形成一个部件,这能够提供结构的机械完整性。 Since three through holes integrally formed part of a member, which can provide mechanical integrity of the structure. 由于通孔的电镀部分是一起整体形成,它们具有几乎相同的晶粒度(grain size), 这与图1结构相反,其中T型通孔84与焊盘40不是整体形成为一体,因此在图1内,尽管焊盘40和通孔84是由相同材料制成,但它们不是整体形成,焊盘和通孔84有不同的内部结构和晶粒度。 Since the plated portion of the through-hole are integrally formed together, they have almost the same grain size (grain size), which in contrast to the structure of FIG 1, wherein T-shaped through hole 84 is not integrally formed with the pad 40 integrally, and therefore in FIG. 1, although the pads 40 and the vias 84 are made of the same material, but they are not integrally formed, pads and through-holes 84 have a different grain size and internal structure. 相比较而言,图1(g)内的结构不够牢固,因为焊盘40可能从通孔84分离。 In comparison, in the structure (g) in FIG. 1 is not strong enough, because the pad 40 may be separated from the through hole 84.

[0032] 在图2(a)_(d)和图3内,通孔的“I型”使通孔紧紧连接到基板和焊盘。 [0032] in FIG. 2 (a) _ (d) and FIG. 3, the through-hole the "I type" through hole firmly connected to the substrate and the pad. 由于通孔的第二和第三部分是在基板的相反面上,并整体地与通孔第一部分形成在一起,结构的机械完整性得以增强。 Since the second and third portions and the through holes are integrally formed with the first portion of the through hole on the opposite surface of the substrate, together with the mechanical integrity of the structure is enhanced. [0033] 通孔的所有三个部分是一个金属层,其通常是铜,因为铜成本低且具有良好的导电性。 All three sections [0033] through-holes is a metal layer, which is typically copper, since copper is low in cost and have good conductivity. 但是,本发明不受限于铜,可以使用任何合适的金属。 However, the present invention is not limited to copper, any suitable metal may be used. 例如,金和钨是可能的代替物, 或其他对本领域技术人员是显而易见的代替物。 For example, gold and tungsten is possible to substitute, for the other, or will be apparent to those skilled substitute.

[0034] 通孔的第一部分84、86从第一表面11延伸穿过器件到第二表面12。 A first portion [0034] 84, 86 through holes 11 extending from the first surface to the second surface 12 through the device. 通孔的第一部分包括两个部件。 A first portion of the through hole comprises two parts. 第一部件84比第二部件86更宽。 The first member 84 is wider than the second member 86. 更宽意味着第一部件具有更大的直径或更大的横截面积(在垂直于从第一表面11延伸到第二表面12的通孔的垂直长度的方向上)。 Wider means that the first member has a larger diameter or larger cross-sectional area (perpendicular to the extending from the first surface to the second surface 11 in a direction perpendicular to the length of the through hole 12). 从图2(a)从左到右的方向上的宽度,能够看到在两个部件之间的尺寸比较。 From left to right in the width direction in FIG. 2 (a), can be seen in the comparison between the size of the two members. 第一部件84延伸穿过器件的非活性区域20,而第二部件86主要延伸穿过器件的活性区域30。 The first member 84 extends through the non-active area of ​​the device 20, and the second main member 86 extends through the active region 30 of the device. 活性区域可以包括一个焊盘。 Active area may comprise a pad. 由于延伸穿过活性区域的第二部件86的横截面积相对小于第一部件84的横截面积,这样可以最小化对活性区域30的损害。 Since the cross-sectional area extending through the active region of the second member 86 is smaller than the cross-sectional area relative to the first member 84, which can minimize damage to the active region 30.

[0035] 第一和第二部件中的其中一个或两个可以是锥形的。 [0035] wherein one or both of the first and second member may be tapered. 优选地,第一部件84是锥形,其在靠近第一表面11的末端比靠近活性区域30的末端更宽(有一个更大的横截面积)。 Preferably, the first member 84 is a tapered surface which is near the first end 11 is wider than end close to the active region 30 (with a larger cross-sectional area). 优选地,第二部件86是锥形的,其在靠近第二表面12的末端比靠近非活性区域20的末端更窄(更小的横截面积)。 Preferably, the second member 86 is tapered, which is close to the end of the second surface 12 is narrower (smaller cross-sectional area) than near the end 20 of the inactive region.

[0036] 在图2(d)和图3内,如上所述,第一部件84和第二部件86是锥形的。 [0036] in FIG. 2 (d) and FIG. 3, as described above, the first member 84 and second member 86 is tapered. 这种锥形在制作过程里有两个主要优势。 This cone has two major advantages in the production process. 第一个优势是进行电镀时通孔的底部(靠近表面12的部分)可以更快速地被填充,因为所需的金属量更少。 The first advantage is a through hole at the bottom (near the part surface 12) can be filled more quickly during plating, because the required amount of metal less. 这有助于自底向上的电镀工艺。 This helps bottom-up plating process. 第二个优势是在活性和非活性层之间结合处的更大开口与区域30内的倾斜通孔侧壁,能够增强溅射薄膜金属120的均勻性。 The second advantage is the greater opening of the inclined sidewalls of the via 30 in the region between the active and inactive layer at the junction, it is possible to enhance the uniformity of the sputtered metal film 120.

[0037] 这种锥形不是必需的,并可能有其它的构造,其中第一和第二部件中没有一个或仅有一个是锥形的。 [0037] Such cone is not essential, and may have other configurations, wherein the first and second components only one or none is tapered. 参照图2(a)到2 (C)。 Referring to FIG. 2 (a) to 2 (C). 在图2(a)内,两个部件都不是锥形的。 In FIG. 2 (a), the two parts are not tapered. 在图2(b)内,第二部件86是锥形的。 In FIG. 2 (b), the second member 86 is tapered. 在图2(c)内,第一部件84是锥形的。 In FIG. 2 (c), the first member 84 is tapered.

[0038] 优选地,通孔包括一个电镀金属层,其围绕一个聚合物填料。 [0038] Preferably, the through hole comprises a plated metal layer, a polymer which surrounds the filler. 这种金属-聚合物-金属结构有助于补偿基板非活性区域20 (通常由硅形成)和电镀金属层(通常由铜形成)的热膨胀系数。 Such metal - polymer - metal structures help to compensate for the inactive region of the substrate 20 (typically formed of silicon) and a plated metal layer (typically formed of copper) of the coefficient of thermal expansion. 通常,电镀金属的热膨胀系数比非活性区域20的热膨胀系数大很多。 Typically, a thermal expansion coefficient than the thermal expansion of the metal plating 20 of the inactive region is much larger factor. 简单的填料有助于降低由热膨胀系数差异引起的问题,首先通过减少电镀层的数目,其次通过具有一个自身的热膨胀的中间系数。 Simple fillers help to reduce problems caused by thermal expansion coefficient difference, firstly by reducing the number of plating layers, followed by an intermediate having a coefficient of thermal expansion itself. 此外,填料层有一定的弹回度。 In addition, the filler layer has a certain degree of spring back. 因此,如果由于温度变化电镀层膨胀时,这种膨胀能够通过“压挤”填料层得以调节。 Thus, if the temperature changes due to the plating layer to expand, such expansion is possible by "pressing" the packing layer is adjusted. 这样,可能导致器件非活性层和活性层破裂或损坏的附加应力能够被最小化或避免。 In this way, it may lead to additional stress device inactive layer and the active layer of broken or damaged can be minimized or avoided.

[0039] 图3详细显示本发明一个通孔的详细结构示意图。 A detailed structural diagram of a through hole of the present invention [0039] FIG. 3 is shown in detail. 通孔从第一表面11延伸穿过一个器件基板到第二表面12。 A through hole extending through the device substrate 12 from the first surface to the second surface 11. 器件包括一个非活性硅层20和一个活性层30。 Device includes a non-active layer 20 and a silicon active layer 30. 活性层30 包括一个键合焊盘40和一个在键合焊盘40和非活性层20之间的硅氧化物隔离层34。 The active layer 30 comprises a bonding pad 40 and a key pad 40 and bonded on the silicon oxide isolation layer 20 between the inactive layer 34. 多个迹线、导电路径和其它结构嵌入其内,并延伸穿过隔离层34。 A plurality of traces, and other conductive path structures embedded therein and extending through the spacer layer 34. 在所述例子里,这些迹线包括介质线32、多晶硅线36和M4线38。 In the example, these include traces medium line 32, a polysilicon line 36 and line 38 M4. 多个结构39从焊盘40突出来。 A plurality of structures 39 protruding from the pad 40. 在活性层里的这些不同结构可以用来从焊盘传递电信号到一个逻辑门电路或器件的其它部分。 These different structures in the active layer can be used to transfer electrical signals from one pad to the other portions of the logic gate circuit or device. 这种结构可以形成一个ESD (静电放电)保护结构。 Such a structure can be formed ESD (electrostatic discharge) protection structures.

[0040] 通孔包括一个较宽的第一部件,其延伸穿过非活性层,以及一个较窄的第二部件, 其延伸穿过活性层。 [0040] a first member comprising a through hole wider, which extends through the non-active layer, and a second narrower part, which extends through the active layer. 由于第二部件更窄,其对活性层里的各种结构几乎不会造成损害。 Since the second member is narrower, which cause little damage to the active layer in a variety of structures.

[0041] 现在将从外至内描述通孔的各个层。 [0041] Now the respective layers from the outside to the inside of the through hole described. 通孔有一个外部聚合物层100、一个阻隔层 The through hole 100 has an outer polymer layer, a barrier layer

7110、一个溅射金属(如铜)层120、一个电镀(如铜)层84和一个内部聚合物层140。 7110, a sputtered metal (e.g., copper) layer 120, a plating (e.g., copper) layer 84 and an inner polymer layer 140. 每一层都有延伸穿过器件的非活性区域的第一部件和延伸穿过器件的活性区域的第二更窄部件。 Each layer has a first member extending through the non-active region of the device and extend through the device active region of the second member is narrower. 在所述例子里,第一和第二部件是锥形的,但这不是必需的,如图2(a)到(c)所示, 可以是非锥形的或仅部分是锥形的。 In the example, the first and second member is tapered, this is not required, FIG. 2 (a) to (c), may be non-tapered or only partially tapered.

[0042] 通孔通常是I型,如上所述,电镀层有第一部分84、86、第二部分82和第三部分88。 [0042] The through holes are typically type I, as described above, a plating layer having a first portion 84, second portion 82 and third portion 88. 这些部分是整体成形的。 These portions are integrally formed. 器件的上表面11被覆盖上一个部件95,其包括一个阻隔层95a、一个溅射金属层95b、一个电镀层95c和焊料95d。 Upper surface of the device 11 is covered by a member 95, which comprises a barrier layer 95a, a sputtered metal layer 95b, a solder plating layer 95c and 95d.

[0043] 优选地,通孔86第一部分的第二部件包括单个“支柱”,其延伸穿过活性区域。 [0043] Preferably, the through hole 86 of the second member includes a first portion of a single "pillars" which extend through the active region. 如图3和图4(a)所示,图4(a)是一个沿着图3线AA的横截面。 3 and FIG. 4 (a) shown in FIG. 4 (a) is a cross section of FIG. 3 along line AA. 为了便于描述,横截面仅显示通孔86的电镀部分和活性区域30。 For ease of description, only the cross-sectional display of the plated portion of the through hole 86 and the active region 30. 如图4(a)所示,优选地,通孔有一个圆形横截面。 FIG. 4 (a) as shown, preferably, the through-hole has a circular cross-section. 但是,也可能有不同形状的横截面,如图4(c)或(d)所示。 However, there may be a different cross-sectional shapes, as shown in FIG 4 (c) or (d) shown in FIG. 另外,也可能有多个“支柱”向下延伸穿过活性区域,如图4(b)的86a到86d所示。 Further, there may be a plurality of "pillars" extend down through the active region, FIG. 4 (b) of FIG 86a to 86d.

[0044] 现在将描述一种形成通孔的方法。 [0044] A method will now be described through holes are formed.

[0045] 图5显示在通孔形成之前的电子器件晶圆。 [0045] Figure 5 shows an electronic device formed on a wafer before the through hole. 其包括之前所述的相同部件,并使用相同的参照码。 Which comprises the same components described earlier, and the same reference symbols. 在所述例子里,该器件是一个存储器晶圆,但本方法也可以应用到处理器、 其它电子器件和微机械器件。 In the example, the memory of the device is a wafer, but the present method may also be applied to a processor, other electronic devices and micro-mechanical devices.

[0046] 在图6和7内,通孔以两个步骤形成。 [0046] in FIG. 6 and 7, the through holes are formed in two steps. 在第一步骤,如图6所示,通过一种蚀刻方法如RIE(反应式离子蚀刻),去除一部分非活性层。 In a first step, as shown in Figure 6, by means of a etching method such as RIE (reactive ion etching), removing a portion of the non-active layer. 仅需要一个蚀刻过程。 Only one etching process. 优选地,通孔是锥形的,在顶部(靠近第一表面11)更宽,尽管这不是必需的。 Preferably, the through hole is tapered at the top (near the first surface 11) wider, although this is not required. 在图7,通过激光钻孔形成通孔的第二部分。 In FIG. 7, the second portion is formed by laser drilling through-holes. 即通过激光对活性区域进行钻孔。 That is drilled by the laser to the active region. 通孔的第二部分的尺寸是由钻孔的可调整激光光束的尺寸确定。 Size of the second portion of the through hole is determined by the size of the drilling laser beam is adjustable. 结果,通孔(包括第一部分60a和第二部分60b)从第一表面11延伸穿过器件到第二表面12。 As a result, the through-hole (60a comprises a first portion and a second portion 60b) extends from the first surface 11 through the device 12 to the second surface. 光刻胶101被添加到器件的第二表面12以保护键合焊盘40的表面。 The photoresist 101 is added to the second surface of the device 12 to protect the bonding surface 40 of the pad.

[0047] 在图8的步骤里,一个绝缘层100被沉积在通孔的内侧壁上。 [0047] In the step in FIG. 8, an insulating layer 100 is deposited on the inner wall of the through hole. 绝缘层可以包括一种聚合物材料。 The insulating layer may comprise a polymeric material. 在图9内,包括阻隔层110和溅射层120的薄金属层被沉积在通孔内部。 In FIG. 9, the barrier layer comprises a thin metal layer 110 and the layer 120 is sputter deposited inside the through hole. 在图10内,再添加电镀层。 In FIG. 10, the plating layer is further added. 使用一种自底而上的电镀工艺。 Uses a bottom-up plating process. 通常,“自底而上”电镀是指在通孔底部(靠近表面12)的电镀金属的沉积率将比通孔的上部分更快。 Typically deposition rate, "bottom-up" refers to the plating at the bottom of the through hole (12 near the surface) of the plating metal through holes in the upper portion than the faster. 因此,靠近表面12的部分(活性区域)首先被电镀金属封闭,而靠近表面11的部分在电镀之后可以仍然是开口的。 Accordingly, part (active region) close to the surface 12 of the first metal plating is closed, and the portion near the surface 11 after the plating may still be open. 与其它电镀方法如等向性(conformal)电镀或自上而下电镀方法相比,自底而上工艺具有如下优势,即通孔内不太可能形成空隙。 Compared with other methods such as electroplating isotropic (Conformal) plating or a plating method top-down, bottom-up process has the advantage that the through-hole is less likely to form voids. 此外,在此例子里,在顶部不需要特别的化学材料诱导自底而上的电镀或抑制电镀,通孔的第二部分60b比第一部分60a更窄,自然采用自底而上电镀工艺,因为“底”部分填充更为迅速。 Further, in this case, at the top of the material induced no special chemical bottom-up the first portion 60a is narrower plating or inhibiting plated through hole than the second portion 60b, and the upper end of the natural self plating process, because "bottom" partially filled more quickly. 电镀形成一个电镀层,其通常是I型,包括整体成形的第一部件84、86、第二部件82和第三部件88。 Electroplating a plating layer is formed, which is typically a type I, comprising a first member 84, second member 82 and third member 88 integrally formed. 第二部件延伸覆盖在器件的第一表面11,第一部件延伸穿过器件,第三部件延伸覆盖在器件的第二表面12。 A second extension member overlying the first surface of the device 11, the first member extends through the device, a third member extending over the second surface 12 of the device.

[0048] 在图11内,添加一种填料,形成“内部”聚合物层140。 [0048] in FIG. 11, the addition of a filler, forming the "internal" polymer layer 140. 从而,通孔有金属-聚合物_金属结构,因为内部聚合物层被电镀金属层围绕。 Thus, the through-hole with a metal - metal _ polymer structure, because the internal layer is a polymer layer surrounding the plated metal.

[0049] 在图12内,一个阻隔层95a和溅射金属层95b被添加到第一表面11上。 [0049] in FIG. 12, a sputtered metal layer 95a and barrier layers 95b are added to the first surface 11. 在图13 内,一层光刻胶102被旋转涂敷到第一和第二表面11、12。 In FIG. 13, a layer of photoresist 102 is applied to the rotation of the first and second surfaces 11,12. 在图14内,另一个电镀层95c被添加在溅射金属层95b的顶部上。 In FIG. 14, the plating layer 95c is further added on top of the sputtered metal layer 95b. 在图15内,焊料95d被添加到电镀层95c的顶部上。 In FIG. 15, the solder 95d is added to the top of the plated layer 95c. 在图16内,从第一表面11去除光刻胶。 In FIG. 16, the photoresist is removed from the first surface 11. 在图17内,上部薄金属层的不需要的部分(到通孔的侧面)被蚀刻掉。 In FIG. 17, an unnecessary portion (the through-hole side) of the upper thin metal layer is etched away. 在图18内,从第二表面12去除光刻胶。 In FIG. 18, the photoresist is removed from the second surface 12. 在图19内,在第一表面11的顶部上,使焊料充满在薄金属层95a-c的周围。 In FIG. 19, on the top of the first surface 11, the solder is filled in around a thin metal layer 95a-c of.

[0050] 因此,器件20、30有一个延伸穿过它的通孔(TSV)。 [0050] Thus, device 20, 30 has a through hole extending therethrough (TSV). 第一电镀层的第三部件88和通孔的另一个电镀层95c可以被用作电接触,用于连接该器件和在器件20、30上方或下方的另一个器件。 Another plating layer of the third member 88 and the through hole 95c of the first plating layer can be used as an electrical contact for connecting the device and the other devices 20, 30 above or below the device. 通常焊料95d将被施加到另一个电镀层,焊料250也可以施加到第三部件88,以方便电连接。 95d is typically of solder plating applied to the other, the solder 250 may be applied to the third member 88, to facilitate electrical connection. 图20显示两个叠层器件。 Figure 20 shows two laminated device.

[0051] 第一器件有一个非活性层200a和一个活性层200b。 [0051] The first device has an active layer 200a and a non-active layer 200b. 第二器件有一个非活性层300a和一个活性层300b。 The second device has an active layer 300a and a non-active layer 300b. 第一通孔210延伸穿过第一器件的左边,并连接第二通孔220,其延伸穿过第二器件的左边。 The first through hole 210 extending through the left side of the first device and the second through hole 220 is connected, extending through the left side of the second device. 第三通孔230延伸穿过第一器件的右边(横向与第一通孔210 相间隔)。 The third through-hole 230 extending through the right side of the first device (laterally spaced from the first through hole 210). 第三通孔230连接第四通孔240,其延伸穿过第二器件的右边。 Third through hole 230 is connected to fourth through hole 240, which extends to the right through the second device.

[0052] 尽管图20的叠层配置仅有两个器件,但是可以有更多的器件叠层在其顶部。 [0052] While the laminate 20 is disposed only two devices, but there may be more on top of the device stack. 另外,尽管图20所示的两个器件有图3实施例特征的通孔,但这不是必要的。 Further, although the two devices shown in FIG. 20 has a through hole embodiment is characterized in FIG 3, this is not essential. 通孔可以有其它实施例或其组合的特征。 The through holes may have other features of the embodiments or combinations thereof. 另外,尽管两个器件有一个或多个本发明的通孔是优选的,但是其中一个器件有现有技术类型的通孔,或者根本没有通孔,也是可能的,但仅有电表面特征用于连接到第一器件的通孔。 Further, although the two devices have one or more through holes of the present invention is preferred, wherein a prior art type of device has a through hole, the through-hole or not, are possible, but only with the electrical surface characteristics a first through-hole to be connected to the device.

[0053] 附图和上述方法以及器件仅是优选实施例,不应该被看作是限制本发明。 [0053] The device and method described above and the accompanying drawings are only preferred embodiments and should not be construed as limiting the present invention. 对所述的特别结构、材料和方法的修改和等同物对本领域技术人员而言是显而易见的,属于由所附权利要求定义的本发明范围内。 The particular structure, materials and methods to those modifications and equivalents will be apparent to the skilled person, belonging defined by the appended claims within the scope of the present invention.

Claims (22)

  1. 一种电子或微机械器件,有第一和第二表面以及一个通孔,该通孔从第一表面延伸穿过该器件到第二表面,该通孔包括整体成形的第一、第二和第三部分,第一部分从第一表面延伸到第二表面,第二部分延伸覆盖该器件的一部分第一表面,第三部分延伸覆盖该器件的一部分第二表面。 An electronic or micromechanical device having first and second surfaces and a through-hole, the through hole extending through from the first surface to the second surface of the device, which comprises a first through hole, and a second integrally formed a third portion, the first portion extending from the first surface to the second surface, the second portion extends over a portion of the first surface of the device, a third portion extending over a portion of a second surface of the device.
  2. 2.根据权利要求1所述的器件,其中通孔是通过电镀形成。 2. The device according to claim 1, wherein a through hole is formed by plating.
  3. 3.根据权利要求1所述的器件,其中通孔的第一、第二和第三部分包括第一电镀层,其中另一个电镀层形成在该器件的第一表面上方。 3. The device of claim 1, wherein the first, second and third portions of the through hole includes a first plating layer, wherein the other of the first plating layer is formed over the surface of the device.
  4. 4.根据权利要求3所述的器件,其中在所述第一电镀层和所述另一个电镀层之间提供一个阻隔层。 4. The device of claim 3, wherein providing a barrier layer between the first plating layer and the plating layer other.
  5. 5.根据权利要求1所述的器件,其中通孔的第一部分包括第一部件和第二部件,第一部件的横截面积比第二部件的横截面积更大。 5. The device according to claim 1, wherein the first portion comprises a first through-hole member and a second member, the first cross-sectional area greater than the cross-sectional area of ​​the second component member.
  6. 6.根据权利要求1所述的器件,其中第一部件是锥形的。 6. The device of claim 1, wherein the first member is tapered.
  7. 7.根据权利要求1所述的器件,其中第二部件是锥形的。 7. The device of claim 1, wherein the second member is tapered.
  8. 8.根据权利要求1所述的器件,其中通孔包括一聚合物填料。 8. The device of claim 1, wherein the through hole comprises a polymeric filler.
  9. 9.根据权利要求8所述的器件,其中聚合物填料被一导电层围绕。 9. The device of claim 8, wherein the polymeric filler is surrounded by a conductive layer.
  10. 10.根据权利要求1所述的器件,其中该器件被叠层在第二器件或基板的顶部或下方, 并通过通孔电连接到第二器件。 10. The device according to claim 1, wherein the device is a second stack on top of or below the substrate or device, and connected to the second device via the through hole.
  11. 11. 一种形成通孔的方法,该通孔延伸穿过一个电子或微机械器件,该器件有第一表面和第二表面,本方法包括:形成一个通孔,该通孔从第一表面延伸穿过该器件到第二表面; 进行电镀以添加一整体成形的金属层,其从所述第一表面延伸穿过所述通孔到所述第二表面;所述整体成形的金属层包括延伸覆盖本器件部分所述第一表面的一部分和延伸覆盖本器件部分所述第二表面的一部分。 11. A method of forming a through hole, the through hole extending through a micromechanical or electronic device, the device having a first surface and a second surface, the method comprising: forming a through hole, the through hole from the first surface a second surface extending into the device through; add to plated metal layer formed integrally, extending from the first surface through the via to the second surface; said metal layer formed integrally comprises extends to cover part of the first surface portion of the present device and extends to cover a portion of the second portion of the surface of the present device.
  12. 12.根据权利要求11所述的方法,包括添加一聚合物层在金属层内。 12. The method according to claim 11, comprising adding a polymer layer in the metal layer.
  13. 13.根据权利要求11所述的方法,其中电镀是通过一个自底而上的工艺执行。 13. The method of claim 11, wherein the plating process is executed by a bottom-on.
  14. 14.根据权利要求11所述的方法,其中该方法还包括叠层所述器件在第二器件顶部或下方的步骤,使得所述器件和所述第二器件通过通孔被电连接。 14. The method according to claim 11, wherein the method further comprises the device stack in a second step the bottom or top of the device so that the device and the second device is electrically connected through the through hole.
  15. 15. 一种电子或微机械器件,有第一和第二表面以及一个通孔,该通孔从第一表面延伸穿过该器件到第二表面,其中该器件有一非活性层和一活性层,其中通孔的第一部件延伸穿过非活性层,通孔的第二部件主要延伸穿过活性层,通孔的第一部件的宽度比通孔的第二部件的宽度更宽。 15. An electronic or micromechanical device having first and second surfaces and a through-hole, the through hole extending through from a first surface to a second surface of the device, wherein the device has a non-active layer and an active layer wherein the first member through hole extending through the non-active layer, a second main member extends through the through hole of the second member than the width of the active layer of the through hole, the through hole of the first member width is wider.
  16. 16.根据权利要求15所述的器件,其中通孔包括一聚合物层和一围绕该聚合物层的金属电镀层,所述聚合物和电镀层都延伸穿过该器件的活性和非活性层。 16. The device according to claim 15, wherein the through hole comprises a polymer layer and a metal plating layer surrounding the polymer layer, the polymer and the plating layer extends through both the active and inactive layer device .
  17. 17. 一种形成通孔的方法,该通孔延伸穿过一个电子或微机械器件,该方法包括:通过蚀刻形成通孔的第一部分,通过激光钻孔形成通孔的第二部分。 17. A method of forming a through hole, the through hole extending through a micromechanical or electronic device, the method comprising: forming a first portion of the through hole by etching, the second portion is formed by laser drilling through-holes.
  18. 18.根据权利要求17的方法,其中通孔的第二部分延伸穿过器件的至少部分活性区域。 18. The method of claim 17, wherein the second portion of the through hole extending through at least a portion of the active region of the device.
  19. 19.根据权利要求18的方法,其中该器件的活性区域包括一个键合焊盘。 19. The method according to claim 18, wherein the active region of the device includes a bonding pad.
  20. 20.根据权利要求17的方法,其中通孔的第二部分的宽度比通孔的第一部分的宽度更2 20. The method according to claim 17, wherein the width of the first portion than the width of the second portion of the through hole of the through hole 2 is more
  21. 21.根据权利要求17的方法,还包括步骤:进行电镀以填充或部分填充一导电金属层在通孔内。 21. The method of claim 17, further comprising the step of: plating to fill or partially filled with a conductive metal layer in the through hole.
  22. 22.根据权利要求21的方法,还包括:添加一聚合物层在导电金属层内。 22. The method of claim 21, further comprising: adding a polymer layer within the conductive metal layer.
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