CN101885164B - Tin solidified diamond abrasive polishing pad with bionic structure and manufacturing method - Google Patents

Tin solidified diamond abrasive polishing pad with bionic structure and manufacturing method Download PDF

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CN101885164B
CN101885164B CN2010101938035A CN201010193803A CN101885164B CN 101885164 B CN101885164 B CN 101885164B CN 2010101938035 A CN2010101938035 A CN 2010101938035A CN 201010193803 A CN201010193803 A CN 201010193803A CN 101885164 B CN101885164 B CN 101885164B
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tin
micro
abrasive
pad
diamond
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CN101885164A (en
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吕玉山
王军
邢雪岭
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沈阳理工大学
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Abstract

The invention discloses a tin solidified diamond abrasive polishing pad with a bionic structure. The polishing pad comprises a plurality of tin lugs mixed with diamond micro-abrasive and a metal base pad; the plurality of tin lugs mixed with the diamond micro-abrasive are welded on the metal base pad; and the distribution of the plurality of tin lugs on the metal base pad satisfies the condition that theta is equal to 137.508 degrees n, leaf arrangement theory and 'Winkler foundation' theory. A manufacturing method for the polishing pad comprises the following steps of: scratching tin paste mixed with diamond micro-abrasive on a template by using a printing scraper, forming the plurality of piled curing-free tin lugs mixed with the diamond micro-abrasive on the upper surface of the metal base pad, then putting the metal base pad, on the surface of which the plurality of piled curing-free tin lugs mixed with the diamond micro-abrasive are distributed, into a reflux welding machine, andwelding the plurality of tin lugs on the metal base pad after heating and melting through a reflux welding system respectively. The polishing pad manufactured by the method has the characteristics ofuniform contact pressure distribution, uniform polishing solution and contact temperature field distribution so as to improve the polishing efficiency.

Description

一种仿生结构的锡固结金刚石磨料抛光垫及制造方法 Bionic tin consolidation diamond abrasive polishing pad structure and method of manufacture

技术领域 FIELD

[0001] 本发明属于陶瓷零件、光学晶体零件和半导体晶片的抛光和平坦化技术领域,特别涉及一种仿生结构的锡固结金刚石磨料抛光垫的结构设计与制造技术方法。 [0001] The present invention pertains to ceramic parts, polishing and planarizing BACKGROUND optical crystal wafer of semiconductor components and, more particularly, to manufacturing technology and structural design of tin bionic structure consolidation diamond abrasive polishing pad.

背景技术 Background technique

[0002] 化学机械抛光(CMP)是使平面陶瓷零件、光学晶体零件和半导体晶片表面超光滑和超平坦的一种重要技术方法。 [0002] Chemical mechanical polishing (CMP) is a planar ceramic parts, optical parts and a crystal surface of the semiconductor wafer an ultra-smooth and flat over an important technical methods. 通常化学机械抛光是利用化学腐蚀和机械摩擦的综合作用使材料得到抛光。 Typically chemical mechanical polishing and chemical etching are combined effects of mechanical friction of the material to give polishing. 在平面抛光过程中如何有效地解决接触压力场和温度场的均衡问题,抛光液的均勻流动问题及抛光废物的有效排除问题一直是该技术领域的难题,成为国内外理论研究者和行业专家们关注的热点。 How to effectively solve the problem of balancing the contact pressure and temperature fields in the plane of the polishing process, uniform flow problems of slurry and polishing wastes effectively eliminate the problem has been a problem in the art, as domestic and foreign industry experts and theorists the focus of attention.

[0003] 锡膏丝网印刷技术和回流焊技术是电子线路板和IC的球栅阵列封装中的重要技术。 [0003] The solder paste screen printing and reflow technology is important ball grid array package of the electronic circuit board and the IC. 丝网印刷是通过漏印的方式将模板上预制的图案至于被印刷物的表面,而回流焊接技术将印刷的锡膏图案按照一定的温度曲线加热和冷却,使锡膏熔化然后固结。 Screen printing stencil by way prefabricated As for the pattern of the template surface of the printed matter, the reflow soldering technique according to a certain pattern of solder paste printed temperature profile of heating and cooling, and then consolidated to melt solder paste. 特别在是IC 的球栅阵列封装中,通过该技术方法可以将阵列排布的球状锡点来完成堆积芯片间的支撑和电路连接。 Especially in a ball grid array package of an IC may be arranged in an array of spherical solder joints to complete the circuit between the support and connected by the chip stacking art method. 因此,锡膏丝网印刷与回流焊技术为我们具体实现这一抛光垫的制造提供了技术上的保障。 Therefore, the solder paste screen printing and reflow technology for us to achieve this specific polishing pad manufacturing provides technical support.

[0004] 在平面抛光或集成平坦化过程中,抛光垫的作用是将抛光液带入抛光区域,与被抛光工件表面摩擦切削和将抛光产生物带出抛光区域。 [0004] In the surface polishing or planarization of integrated process, the polishing pad is a polishing liquid into the role of the polishing region, the workpiece being polished and the polishing surface friction produced was cut out of the polishing area. 对于现有的抛光垫来说,无论是连续介质形态的还是具有一定微孔形态,由于材料的牵连或剪切效应,及表面宏观的连续性, 使得抛光时产生的接触压强不均勻、产生的温度分布不均勻、抛光液难以均勻的引入并且抛光废物难以顺畅排除,更不能有效地均衡分配化学与机械作用的比例,从而导致被抛光表面宏观与微观轮廓精度下降,更难以实现全局平坦化。 For conventional polishing pads, whether a continuous medium having a certain shape or form pores, since the material is implicated or shear effect, and the macroscopic surface continuity, so that uneven contact pressure generated during polishing, resulting uneven temperature distribution, is difficult to uniformly introduced into the polishing liquid and the polishing wastes difficult to rule out smoothly, but can not effectively balanced distribution ratio of chemical and mechanical action, leading to the lowered profile of the polishing surface macroscopic and microscopic accuracy more difficult to achieve global planarization.

[0005] 为了解决上述问题,人们从经典的弹性接触理论出发对接触压力场进行了计算, 了解接触压力场不均勻的原因,即采用了护环法、背垫法和流体负载法来解决该问题,也采用了抛光垫开槽的方式解决抛光液的流动问题,但是仍然没有使所有问题得到更有效全面地解决。 [0005] In order to solve the above problems, it from the classical theory of elastic contact field of the contact pressure was calculated to find out why the contact pressure field inhomogeneities, i.e. method using the grommet, and the fluid back pad method addresses the loading method problem, also used polishing pad grooving way to solve the problem of slurry flow, but still not all issues have been fully resolved more effectively. 然而,"Winkler地基”理论和生物的叶序理论为我们解决上述问题提供了可能。 However, phyllotaxy theory "Winkler foundation" biological theory and provides the possibility for us to solve these problems. “Winkler地基”理论是将接触对象看成是剪切弹性模量为零,接触为由一个个与接触变形与压强成正比的独立“土柱”所组成。 Theory "Winkler foundation" is the contact object as a shear modulus is zero, by contacting one independent "soil column" contact pressure is proportional to the deformation of the composition. 因此,按照上述理论制造出相应的抛光垫就能达到解决问题的目的。 Therefore, in accordance with the above theory to produce the corresponding pad will be able to achieve the purpose of solving the problem.

发明内容 SUMMARY

[0006] 本发明的目的是针对抛光过程中由于抛光垫的连续性使得产生的接触压强不均勻、被抛光件中心温度较高、抛光液难以均勻进入接触区域和产生的废物难以排出的问题, 而提供的表面按植物叶序理论排布的一种仿生结构的锡固结金刚石磨料抛光垫。 [0006] The object of the present invention is directed to a polishing process due to unevenness of the polishing pad such that the continuity of the contact pressure, is difficult to discharge the higher center temperature is polished, the polishing liquid enters the contact region and difficult to uniformly produce waste, consolidation and tin bionic diamond surface structure provided according to the arrangement order theory leaf abrasive polishing pad.

[0007] 本发明的另一目的是提供了制造一种仿生结构的锡固结金刚石磨料抛光垫的制造方法。 [0007] Another object of the present invention is to provide a structure for producing a biomimetic method of manufacturing a tin consolidation diamond abrasive polishing pad. [0008] 采用的技术方案是: [0008] The technical solutions adopted are:

[0009] 一种仿生结构的锡固结金刚石磨料抛光垫,包括多个混有金刚石微磨料的锡凸块和金属基垫,多个混有金刚石微磨料的锡凸块分别焊接在金属基垫上,上述多个锡凸块在金属基垫上的分布满足θ = 137.508° η和r = V^的叶序理论,锡凸块各自分离且满足“Winkler地基”理论,其中η为锡凸块序数,θ为在极坐标系中以金属基垫的中心为起点, 以第η个锡凸块为终点,基准向量所转过的角度,r为锡凸块固结点的极坐标半径,k是叶序系数。 [0009] Consolidation of the diamond abrasive polishing pad tin bionic structure, comprising a plurality of diamond micro-abrasive mixed with tin metal bump and the base pad, the plurality of micro diamond abrasive mixed tin solder bump pads in a metal matrix are the plurality of solder bumps ordinal number distribution of the metal base pad satisfies θ = 137.508 ° η and r = V ^ leaf order theory, tin bumps are separated from each satisfying theory "Winkler foundation", wherein [eta] is tin bumps, θ is the polar coordinate system to a central metal pad group as a starting point, with the first η th tin bumps as the end point, the rotated angle of the reference vector, r is the polar radius tin bumps consolidation point, k is a leaf order coefficient.

[0010] 混有金刚石微磨料的锡凸块由锡膏材料与金刚石微磨料混合制成,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的5〜50%。 [0010] mixed with tin diamond abrasive micro bump from the solder paste material prepared by mixing diamond abrasive micro, micro volume of diamond abrasive accounted 5~50% by volume of the above-described micro-abrasive diamond paste material mixture. 锡膏材料为:锡和铅的混合物,锡、铅和银的混合物,无铅锡膏或用于IC封装用的锡膏。 Paste materials: mixture of tin and lead, tin, lead and silver, solder paste or solder paste used for IC package. 锡和铅的混合物配比为63 : 37锡、铅和银的混合物,配比为62 : 36 : 2。 A mixture of tin and lead ratio of 63: 37, tin, lead and silver in the mixture, the ratio is 62: 36: 2.

[0011] 金刚石微磨料直径范围为0. 005〜5μπι,混有金刚石微磨料的锡凸块的半径为0. 1〜2. 5mm。 [0011] Diamond abrasive micro diameter range of 0. 005~5μπι, mixed with tin bumps radius diamond abrasive for micro 0. 1~2. 5mm. 金属基垫的直径以所需抛光盘直径为标准,厚度为0. 03〜0. 5mm。 Group metal in a desired polishing pad as the standard diameter and a thickness of 0. 03~0. 5mm.

[0012] 一种仿生结构的锡固结金刚石磨料抛光垫的制造方法,包括下列步骤: [0012] Consolidation tin bionic structure diamond abrasive polishing pad manufacturing method, comprising the steps of:

[0013] ①制作丝网印刷模板。 [0013] ① make screen printing stencils. 丝网印刷模板包括模板和网框。 Screen printing templates, including templates and network box. 模板为矩形丝网印刷网, 模板上的丝网孔的分布满足θ = 137.508° η和r = A:V^叶序理论。 A rectangular template screenprinting, distribution holes in the screen template satisfies θ = 137.508 ° η and r = A: V ^ phyllotaxy theory. 网框为与矩形模板外边缘相配合的外框。 The frame template for the outer edge of the rectangular outer frame fitted.

[0014] ②将金属基垫固定在丝网印刷工作台上,将丝网印刷模板固定在丝网印刷工作台上,位于金属基垫上方,保证金属基垫与丝网印刷模板的相对位置。 [0014] ② The metal-based screen printing pad is fixed on the table, secured to the screen printing stencils of screen printing table, the metal pad on the substrate, to ensure that the relative position of the metal base pad and the screen stencil.

[0015] ③本方法中锡膏材料为:锡和铅的混合物,锡、铅和银的混合物,无铅锡膏,用于IC封装用的锡膏。 [0015] ③ material is a solder paste of the present process: a mixture of tin and lead, tin, lead and silver, lead-free solder paste, solder paste used for IC package. 锡和铅的混合物,配比为63 : 37,锡、铅和银的混合物,配比为62 : 36 : 2。 A mixture of tin and lead, the ratio of 63: 37, tin, lead and silver in the mixture, the ratio is 62: 36: 2. 金刚石微磨料直径范围为0.005〜5μπι,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的5〜50%。 Diamond abrasive micro diameter range 0.005~5μπι, accounted for the volume of the diamond abrasive micro 5~50% by volume of the above-described micro-abrasive diamond paste material mixture. 将锡膏材料与金刚石微磨料混合均勻,制成混有金刚石微磨料的锡膏。 The micro-abrasive diamond paste material mixed to prepare a paste mixed with micro diamond abrasive.

[0016] ④将上述混有金刚石微磨料的锡膏放在模板上,使用印刷刮刀在模板上刮印混有金刚石微磨料的锡膏,使混有金刚石微磨料的锡膏从模板的丝网孔中落下,在金属基垫上表面形成多个堆状的没有固化的混有金刚石微磨料的锡凸块,上述多个锡凸块的分布满足θ = 137. 508° η和r = A:叶序理论和"Winkler地基”理论。 [0016] ④ above mixed with micro diamond abrasive paste on the template, and the printing scraper blade on the stencil printed solder paste mixed with micro diamond abrasive, so that the micro-mixed diamond abrasive paste from the screen template dropping hole is formed in the pad surface of the metal substrate a plurality of stacks of uncured shaped diamond micro abrasive mixed tin bumps, a plurality of solder bumps distributed above satisfies θ = 137. 508 ° η and r = a: leaf theory and order theory "Winkler foundation."

[0017] 印刷刮刀的压力P和速度V根据具体需要选取,上述印刷过程是在温度25 士3°C和相对湿度40-70%条件下进行。 [0017] The printing speed and the pressure P V of the blade according to the specific need to select the printing process is carried out at a temperature of 25 persons 3 ° C and 40-70% relative humidity conditions.

[0018] ⑤将上述表面分布有多个没有固化的混有金刚石微磨料的锡凸块的金属基垫放入回流焊机中,通过回流焊发热系统将多个没有固化的混有金刚石微磨料的锡膏加热熔化后分别焊接在金属基垫上。 Into the metal base pad reflow [0018] ⑤ the distribution of the surface with a plurality of uncured mix diamond abrasive micro-tin bumps by reflow heating system, a plurality of uncured mixed diamond abrasive micro pads are welded to the metal substrate after the heating and melting the solder paste.

[0019] 上述焊接过程要按照回流焊加温和降温曲线控制,焊接过程中温度区分为A、B、C、 D、E禾口F区。 [0019] The reflow soldering process according to control heating and cooling profile, the temperature of the welding process is divided into A, B, C, D, E F Wo mouth region.

[0020] a) A为预热区:温度约为0〜125°C,时间约为60秒左右。 [0020] a) A preheat zone: temperature of about 0~125 ° C, time is about 60 seconds.

[0021] b) B为浸濡区:温度约为125〜170°C,时间约为120秒左右。 [0021] b) B is the immersion zone: temperature of about 125~170 ° C, time is about 120 seconds.

[0022] c) C为回焊区:温度为约190〜240°C,时间约为60秒左右。 [0022] c) C is a reflow zone: temperature of about 190~240 ° C, time is about 60 seconds.

[0023] d)D为冷却区:温度约190〜120°C,时间约为60秒左右。 [0023] d) D is the cooling zone: a temperature of about 190~120 ° C, time is about 60 seconds. [0024] e)E为BC过渡区:温度为约170〜190°C,时间约为30秒左右。 [0024] e) E is a transition zone BC: temperature of about 170~190 ° C, time is about 30 seconds.

[0025] f)F为CD过渡区:温度为约190〜210°C,时间约为30秒左右。 [0025] f) F is the CD transition zone: temperature of about 190~210 ° C, time is about 30 seconds.

[0026] 其优点在于:本发明的设计结构是在金属基垫上分别焊接上多个混有金刚石微磨料的锡凸块,该多个锡凸块的分布满足叶序理论,并具有“Winkler地基”的特征,按照上述理论设计和制造成的抛光垫就有接触压强分布均勻、抛光液均布和接触温度场分布均勻及抛光废物的有效排除的作用.对于解决平面光学零件、陶瓷工程零件、IC和MEMS的集成平坦化过程有重要意义,提高生产效率,改善产品质量,对推动集成电路制造技术的发展具有现实意义。 [0026] The advantages: the structure of the present invention is designed in a metal matrix on the plurality of solder pads are mixed with micro-tin bumps diamond abrasive, the plurality of distribution satisfies phyllotaxis theory tin bumps, and has a "Winkler Foundation "characterized, according to the above theory to the design and manufacture of the polishing pad have uniform contact pressure distribution, and uniform contact with the polishing liquid and temperature distribution uniform and effectively eliminate waste polishing effect for solving a planar optical components, ceramic engineering parts, IC and MEMS integration planarization process is important, improve production efficiency, improve product quality, has practical significance for promoting the development of integrated circuit manufacturing technology.

附图说明 BRIEF DESCRIPTION

[0027] 图1为一种仿生结构的锡固结金刚石微磨料抛光垫结构图。 [0027] FIG. 1 is a tin microstructure consolidation diamond abrasive polishing pad structure bionic structure.

[0028] 图2为一种仿生结构的锡固结金刚石微磨料抛光垫截面结构图。 [0028] FIG. 2 is a cross-sectional structural view consolidation tin micro diamond abrasive polishing pad bionic structure.

[0029] 图3为丝网印刷模板。 [0029] FIG. 3 is a screen printing stencils.

[0030] 图4为混有金刚石微磨料的锡膏丝网印刷图。 [0030] FIG 4 is mixed with the diamond abrasive micro-screen printing paste FIG.

[0031] 图5为热风回流焊的原理图。 [0031] FIG. 5 is a schematic diagram of a hot-air reflow.

[0032] 图6为所获得一种仿生结构的锡固结金刚石微磨料的抛光垫图。 [0032] FIG. 6 is a polishing pad of micro diamond abrasive consolidation tin bionic structure obtained.

[0033] 图7为回流焊过程温度曲线示例图。 [0033] FIG. 7 is an example of the temperature profile during reflow FIG.

具体实施方式 Detailed ways

[0034] 一种仿生结构的锡固结金刚石磨料抛光垫,包括多个混有金刚石微磨料的锡凸块1和金属基垫2,多个混有金刚石微磨料的锡凸块1分别焊接在金属基垫2上,上述多个混有金刚石微磨料的锡凸块1在金属基垫2上的分布满足θ = 137.508° η和r = JtV^的叶序理论,锡凸块各自分离且满足“Winkler地基”理论,其中η为锡凸块序数;θ为在极坐标系中以金属基垫的中心为起点,以第η个锡凸块为终点,基准向量所转过的角度,r为锡凸块固结点的极坐标半径;k是叶序系数。 [0034] Consolidation tin bionic structure diamond abrasive polishing pad, comprising a plurality of diamond micro-abrasive mixed with the tin group metal bump pad 1 and 2, mixed with a plurality of micro-tin bumps diamond abrasives 1 are welded group 2 metal pad, said plurality of diamond micro-abrasive mixed with tin metal bumps 1 on the basis distribution pad 2 satisfies θ = 137.508 ° η and r = JtV ^ leaf order theory, tin bumps are separated from each satisfying theory "Winkler foundation", where η is the ordinal number of tin bumps; [theta] is the polar coordinate system to a central metal base mat as a starting point, with the first η th tin bumps as the end point reference vector rotated through an angle, r is tin salient polar angle block consolidation point; phyllotactic coefficient K is.

[0035] 混有金刚石微磨料的锡凸块1由锡膏材料与金刚石微磨料10混合制成,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的5〜50%。 [0035] The blended diamond abrasive micro-tin bumps 10 made of a paste material mixed with the diamond abrasive micro, micro-volume diamond abrasive accounted 5~50% by volume of the above-described micro-abrasive diamond paste material mixture. 锡膏材料为:锡和铅的混合物,锡、铅和银的混合物,无铅锡膏或用于IC封装用的锡膏。 Paste materials: mixture of tin and lead, tin, lead and silver, solder paste or solder paste used for IC package. 锡和铅的混合物,配比为63 : 37,锡、铅和银的混合物,配比为62 : 36 : 2。 A mixture of tin and lead, the ratio of 63: 37, tin, lead and silver in the mixture, the ratio is 62: 36: 2.

[0036] 混有金刚石微磨料的锡凸块1的半径为1mm。 [0036] mixed with the diamond abrasive micro-tin bumps 1 is a radius of 1mm. 金属基垫2的直径以所需抛光盘直径为标准,由铜或不锈钢箔板制成,厚度为0. 3mm。 Diameter pad metal substrate 2 at a desired polishing standard diameter, made of copper or stainless steel foil plate having a thickness of 0. 3mm.

[0037] 一种仿生结构的锡固结金刚石磨料抛光垫的制造方法,包括下列步骤: [0037] Consolidation tin bionic structure diamond abrasive polishing pad manufacturing method, comprising the steps of:

[0038] ①制作丝网印刷模板。 [0038] ① make screen printing stencils. 丝网印刷模板包括模板4和网框5。 4 includes a template screen printing stencils 5 and network box. 模板4为矩形丝网印刷网,模板4上的丝网孔的分布满足θ = 137.508° η和r = Ai叶序理论,可电铸成型、激光切割成型或感光腐蚀成型。 4 is a rectangular template screenprinting, a screen template distribution holes on the 4 satisfies θ = 137.508 ° η and r = Ai phyllotaxy theory, can electroforming, laser cut type photosensitive etching or molding. 网框5为与矩形模板外边缘相配合的外框,采用铝或钢制成。 The frame 5 with the outer edge of the mask cooperating rectangular frame, made of aluminum or steel employed.

[0039] ②将金属基垫2固定在丝网印刷工作台8上,将丝网印刷模板固定在丝网印刷工作台8上,位于金属基垫2上方,保证金属基垫2与丝网印刷模板的相对位置。 [0039] ② The metal base 2 is fixed to the pad screen printing station 8, the screen printing stencils is fixed to the screen printing station 8, located above the metal base pad 2, to ensure that the metal base pad 2 and a screen printing the relative position of the template.

[0040] ③本方法中锡膏材料为:锡和铅的混合物,锡、铅和银的混合物,无铅锡膏或者为用于IC封装用的锡膏。 [0040] ③ material is a solder paste of the present process: a mixture of tin and lead, tin, lead and silver, lead-free solder paste or a solder paste used for an IC package. 锡和铅的配比为63 : 37锡、铅和银的配比为62 : 36 : 2,金刚石微磨料10直径为3 μ m,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的50%。 Tin and lead ratio of 63: 37 tin, lead and silver ratio of 62: 36: 2, 10 micro-diameter diamond abrasive is 3 μ m, the volume of the diamond abrasive micro account the above paste material mixture of diamond abrasive micro- 50% of the volume. 将锡膏材料与金刚石微磨料混合均勻,制成混有金刚石微磨料的锡膏7。 The micro-abrasive diamond paste material mixed to prepare a mixed paste of diamond abrasive micro-7.

[0041] ④将上述混有金刚石微磨料的锡膏放在模板4上,使用印刷刮刀6在模板4上刮印混有金刚石微磨料的锡膏7,使混有金刚石微磨料的锡膏7从模板的丝网孔中落下,在金属基垫2上表面形成多个堆状的没有固化的混有金刚石微磨料的锡凸块3,上述多个锡凸块的分布满足θ = 137. 508° η和r = yti叶序理论和“Winkler地基”理论。 [0041] ④ mixed with the above abrasive diamond micro template 4 placed on the solder paste, a printing doctor blade 6 mix the micro-abrasive diamond paste 7 on the template 4 squeegee the paste mixed with micro diamond abrasive 7 dropped from the screen holes of the template, the tin group metal bump pads 2 are formed on the surface of the plurality of stack-shaped uncured mixed with micro diamond abrasive 3, a plurality of solder bumps distributed above satisfies θ = 137. 508 ° η and r = phyllotactic theory and theoretical yti "Winkler foundation."

[0042] 印刷刮刀6的压力P和速度V可根据具体需要选取,上述印刷过程是在温度25 士3 °C和相对湿度40-70%条件下进行。 [0042] blade pressure P and the printing speed of 6 V may be selected according to specific needs, the above-described printing process is carried out at a temperature of 25 persons 3 ° C and 40-70% relative humidity conditions.

[0043] ⑤将上述表面分布有多个没有固化的混有金刚石微磨料的锡凸块5的金属基垫2 放入回流焊机中,通过回流焊发热系统9将多个没有固化的混有金刚石微磨料的锡膏3加热熔化后分别焊接在金属基垫2上。 [0043] ⑤ the distribution of the surface with a plurality of uncured mix diamond abrasive tin micro-bump metal base 5 into the mat 2 reflow machine, to reflow the heating system 9 is mixed with a plurality of uncured after the diamond abrasive micro-welded to the metal heating and melting the solder paste 3 on the base pad 2.

[0044] 上述焊接过程要按照回流焊加温和降温曲线控制,焊接过程中温度区分为A、B、C、 D、E禾口F区。 [0044] The reflow soldering process according to control heating and cooling profile, the temperature of the welding process is divided into A, B, C, D, E F Wo mouth region.

[0045] a) A为预热区:温度约为0〜125°C,时间约为60秒左右。 [0045] a) A preheat zone: temperature of about 0~125 ° C, time is about 60 seconds.

[0046] b) B为浸濡区:温度约为125〜170°C,时间约为120秒左右。 [0046] b) B is the immersion zone: temperature of about 125~170 ° C, time is about 120 seconds.

[0047] c) C为回焊区:温度为约190〜240°C,时间约为60秒左右。 [0047] c) C is a reflow zone: temperature of about 190~240 ° C, time is about 60 seconds.

[0048] d)D为冷却区:温度约190〜120°C,时间约为60秒左右。 [0048] d) D is the cooling zone: a temperature of about 190~120 ° C, time is about 60 seconds.

[0049] e)E为BC过渡区:温度为约170〜190°C,时间约为30秒左右。 [0049] e) E is a transition zone BC: temperature of about 170~190 ° C, time is about 30 seconds.

[0050] f)F为CD过渡区:温度为约190〜210°C,时间约为30秒左右。 [0050] f) F is the CD transition zone: temperature of about 190~210 ° C, time is about 30 seconds.

Claims (4)

1. 一种仿生结构的锡固结金刚石磨料抛光垫,包括多个混有金刚石微磨料的锡凸块(1)和金属基垫O),其特征在于:多个混有金刚石微磨料的锡凸块(1)分别焊接在金属基垫(¾上,上述多个锡凸块在金属基垫上的分布满足叶序理论的极坐标公式θ = 137.508° η和r = ytV^,其中η为锡凸块序数;θ为在极坐标系中以金属基垫的中心为起点,以第η个锡凸块为终点,基准向量所转过的角度,r为锡凸块固结点的极坐标半径;k是叶序系数;上述锡凸块各自分离且满足“Winkler地基”理论;混有金刚石微磨料的锡凸块(1)由锡膏材料与金刚石微磨料(10)混合制成,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的5〜50% ;锡膏材料为:锡和铅的混合物,锡、铅和银的混合物,无铅锡膏或用于IC封装用的锡膏;锡和铅的混合物, 配比为63 : 37,锡、铅 Tin consolidation diamond abrasive polishing pad 1. A biomimetic structure, comprising a plurality of mixing tin micro bumps diamond abrasive (1) and the metal base pad O), wherein: a plurality of diamond micro-tin mixed with abrasive projections (1) are welded to the metal base pad (on ¾, polar distribution satisfy equation order theory of the plurality of leaf tin bumps in a metal matrix pad and θ = 137.508 ° η r = ytV ^, where [eta] is tin bump ordinal number; [theta] is the polar coordinate system to a central metal pad group as a starting point, with the first η th tin bumps as the end point, the rotated angle of the reference vector, r is the tin bumps consolidation point polar angle ; coefficient K is phyllotactic; tin bumps are separated from each above and satisfies theory "Winkler foundation"; mixed with the diamond abrasive micro-tin bumps (1) made from a mixture of micro diamond paste abrasive material (10), the diamond micro 5~50% by volume of abrasive accounted for the volume of solder paste material is a mixture of diamond abrasive micro; paste material: a mixture of tin and lead, tin, lead and silver, solder paste, or encapsulation for an IC solder paste; a mixture of tin and lead, the ratio of 63: 37, tin, lead 银的混合物,配比为62 : 36 : 2,金刚石微磨料(10)直径范围为0. 005〜5 μ m,混有金刚石微磨料的锡凸块的(1)半径为0. 1〜2. 5mm ;金属基垫O)的直径以所需抛光盘直径为标准,厚度为0. 03〜0. 5mm。 Mixtures of silver, the ratio of 62: 36: 2, the diamond abrasive micro (10) diameter in the range 0. 005~5 μ m, is mixed with tin micro bumps diamond abrasives (1) radius of 0. 1 ~ . 5mm; metal pad yl O) diameter to a desired diameter of a standard polishing, a thickness of 0. 03~0 5mm..
2. 一种仿生结构的锡固结金刚石磨料抛光垫的制造方法,其中,该抛光垫包括多个混有金刚石微磨料的锡凸块和金属基垫,所述锡凸块在金属基垫上的分布满足叶序理论的极坐标公式θ = 137.508° η*Γ = Α:·Λ,其中η为锡凸块序数;θ为在极坐标系中以金属基垫的中心为起点,以第η个锡凸块为终点,基准向量所转过的角度,r为锡凸块固结点的极坐标半径;k是叶序系数;上述锡凸块各自分离且满足“Winkler地基”理论;其特征在于包括下列步骤:①制作丝网印刷模板:丝网印刷模板包括模板(4)和网框(5):模板(4)为矩形丝网印刷网,模板(4)上的丝网孔的分布满足上述极坐标公式θ = 137.508° η和r = 网框(5)为与矩形模板外边缘相配合的外框;②将金属基垫O)固定在丝网印刷工作台(8)上,将丝网印刷模板固定在丝网印刷工作台(8)上,位于金属基垫(¾上 A tin consolidation diamond abrasive polishing bionic structure manufacturing method of the pad, wherein the polishing pad comprises a plurality of micro-mixed diamond abrasive tin group metal bump and the pad, the solder bumps on metal pads of the base distribution satisfies polar equation of order theory leaf θ = 137.508 ° η * Γ = Α: · Λ, where [eta] is the ordinal number of tin bumps; [theta] is the polar coordinate system to a central metal base mat as a starting point, with the first [eta] th tin bumps as the end point, the rotated angle of the reference vector, r is the polar radius tin salient point consolidation blocks; phyllotactic coefficient K is; and the tin bumps are separated from each satisfying theory "Winkler foundation"; wherein comprising the following: ① From production of screen printing stencils: screen printing templates includes a template (4) and the screen frame (5): template (4) screen printing a rectangular mesh, mesh distribution to meet the hole on the template (4) the above-described polar coordinate equation θ = 137.508 ° η and r = screen frame (5) is fitted with a rectangular outer frame outer edge of the template; ② the metal pad yl O) is fixed to the screen printing station (8), the wire screen printing templates immobilized on a screen printing station (8), the metal base pad (¾ on 方,保证金属基垫(¾与丝网印刷模板的相对位置;③本方法中锡膏材料为:锡和铅的混合物,配比为63 : 37,锡、铅和银的混合物,配比为62 : 36 : 2,无铅锡膏或用于IC封装用的锡膏;金刚石微磨料(10)直径范围为0.005〜 5 μ m,金刚石微磨料的体积占上述锡膏材料与金刚石微磨料混合物的体积的5〜50 %,将锡膏材料与金刚石微磨料混合均勻,制成混有金刚石微磨料的锡膏(7);④将上述混有金刚石微磨料的锡膏(7)放在模板(4)上,使用印刷刮刀(6)在模板(4) 上刮印混有金刚石微磨料的锡膏(7),使混有金刚石微磨料的锡膏(7)从模板的丝网孔中落下,在金属基垫(¾上表面形成多个堆状的没有固化的混有金刚石微磨料的锡凸块(3),上述多个锡凸块的分布满足上述叶序理论的极坐标公式和“Winkler地基”理论;⑤将上述表面分布有多个没有固化的混有 Side, to ensure that the relative position of the metal base pad (¾ screen printing templates; ③ material is a solder paste according to the present process: a mixture of tin and lead, the ratio of 63: 37, a mixture of tin, lead and silver, ratio of 62: 36: 2, solder paste or solder paste used for an IC package; micro diamond abrasive (10) diameter in the range 0.005~ 5 μ m, the volume of the diamond abrasive micro account the above paste material mixture of diamond abrasive micro- 5~50% by volume of the micro-abrasive diamond paste material mixed to prepare a paste mixed with micro diamond abrasive (7); ④ the above mixed with micro diamond abrasive paste (7) on the template (4) from the hole template, the screen used in printing scraper (6) on the template blade (4) printed solder paste mixed with micro diamond abrasives (7), so that the micro-mixed diamond abrasive paste (7) fall (¾ surface is formed on a metal substrate a plurality of pad-shaped stack uncured mix diamond abrasive micro-tin bumps (3), a plurality of solder bumps above the distribution satisfies the above-described polar coordinate equation order theory leaves and "Winkler foundation" theory; ⑤ the distribution of the surface with a plurality of uncured mixed with 金刚石微磨料的锡凸块(3)的金属基垫(2) 放入回流焊机中,通过回流焊发热系统⑶)将多个没有固化的混有金刚石微磨料的锡膏(3)加热熔化后分别焊接在金属基垫(¾上。 Diamond abrasive micro-tin bumps (3) a metal base pad (2) into the reflow machine, a heat reflow system ⑶) a plurality of uncured paste mixed with micro diamond abrasive (3) heating and melting respectively, after welding (the base metal ¾ pad.
3.基于权利要求2所述的一种仿生结构的锡固结金刚石磨料抛光垫的制造方法,其特征在于:上述印刷过程是在温度25士3°C和相对湿度40-70%条件下进行。 3. The tin-based consolidation diamond bionic structure according to claim 2 of the method for producing an abrasive polishing pad, wherein: the above-described printing process is carried out at a temperature of 25 persons 3 ° C and 40-70% relative humidity conditions .
4.基于权利要求2所述的一种仿生结构的锡固结金刚石磨料抛光垫的制造方法,其特征在于:上述焊接过程要按照回流焊加温和降温曲线控制,焊接过程中温度区分为A、B、C、 D、E禾口F区;a) A为预热区:温度为0〜125°C,时间为60秒;b)B为浸濡区:温度为125〜170°C,时间为120秒;c) C为回焊区:温度为190〜240°C,时间为60秒;d)D为冷却区:温度190〜120°C,时间为60秒;e)E为BC过渡区:温度为170〜190°C,时间为30秒;f)F为CD过渡区:温度为190〜210°C,时间为30秒。 4. The tin-based consolidation diamond abrasive bionic structure 2 according to claim polishing pad manufacturing method, wherein: the aforementioned reflow soldering process according to control heating and cooling curves, the welding process is divided into temperature zone A , B, C, D, E F Wo port zone; a) A preheat zone: temperature of 0~125 ° C, 60 seconds; b) B is the immersion zone: temperature of 125~170 ° C, 120 seconds; c) C is a reflow zone: temperature of 190~240 ° C, 60 seconds; d) D is the cooling zone: temperature of 190~120 ° C, 60 seconds; e) E is the BC transition zone: temperature of 170~190 ° C, for 30 seconds; f) F is the CD transition zone: temperature of 190~210 ° C, for 30 seconds.
CN2010101938035A 2010-06-08 2010-06-08 Tin solidified diamond abrasive polishing pad with bionic structure and manufacturing method CN101885164B (en)

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CN102814765B (en) * 2012-08-10 2014-07-02 南京航空航天大学 Equipment and method for distributing rotary brazing super-hard abrasive tool

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CN101327577B (en) * 2008-07-25 2010-04-21 南京航空航天大学 Fixed abrasive polishing pad with self-finishing function and even wear
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CN101823242B (en) * 2010-04-29 2012-06-06 沈阳理工大学 Bionic polishing pad based on sunflower kernel distribution structure and manufacturing method

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EP3013528A4 (en) * 2013-06-28 2017-01-25 Saint-Gobain Abrasives, Inc. Coated abrasive article based on a sunflower pattern

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