CN101866954A - TFT substrate having micro-channel structure and preparation method thereof - Google Patents
TFT substrate having micro-channel structure and preparation method thereof Download PDFInfo
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- CN101866954A CN101866954A CN 201010195978 CN201010195978A CN101866954A CN 101866954 A CN101866954 A CN 101866954A CN 201010195978 CN201010195978 CN 201010195978 CN 201010195978 A CN201010195978 A CN 201010195978A CN 101866954 A CN101866954 A CN 101866954A
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Abstract
The invention relates to a TFT substrate having a micro-channel structure and a preparation method thereof and relates to the vacuum coating technique. The TFT substrate comprises an amorphous silicon film and two layers of MgO films on the upper and lower sides of the amorphous silicon film. The method comprises the step of preparing the MgO film through the magnetic control sputtering technique and preparing the amorphous silicon film through the plasma enhancing chemic vapor phase depositing technique (PECVD). The MgO film has a big secondary electron yield. When the electrode which has energy impacts the MgO film, more free electrodes can be obtained. The invention can ensure that the TFT substrate having a micro-channel structure is compact and uniform in thickness. The invention not only promotes the transferring rate of the amorphous silicon film carrier, but also has the property of the TFT which is prepared by using the amorphous silicon film of the invention, close to the property of the TFT which is prepared by using low-temperature polycrystalline silicon, lowers the preparation cost of the TFT substrate and simplifies the preparation technique of TFT.
Description
Technical field
The present invention relates to be used to prepare a kind of TFT substrate of thin-film transistor (TFT) with Micro Channel Architecture, and the method for preparing this TFT substrate, adopt the non-crystalline silicon tft of this TFT substrate preparation, be specially adapted to drive organic electroluminescence device (OLED).
Background technology
Usually, the TFT substrate that is used for preparing driving OLED has three kinds, comprises non-crystalline silicon tft substrate, low temperature polycrystalline silicon TFT substrate and monocrystalline silicon TFT substrate.Preceding two kinds of substrates all are that TFT directly is produced on the glass substrate, and monocrystalline silicon TFT substrate is the TFT that makes on monocrystalline silicon wafer crystal.Wherein, the non-crystalline silicon tft substrate has advantages such as preparation technology is simple relatively, the equipment input is less relatively, preparation cost is relatively low.
The OLED device is to belong to the display device that current mode drives, and the key of its operate as normal is to be that drive circuit should be able to provide enough big operating current to it.Because low two orders of magnitude of non-crystalline silicon tft carrier mobility speed lower temperature multi-crystal TFT carrier mobility speed, traditional non-crystalline silicon tft can't provide enough big operating current in OLED small size display screen, cause the brightness of small size OLED display screen lower like this, can't carry out operate as normal.Therefore, for the small size OLED display screen that is used for such as mobile phone display screen, all be to adopt low temperature polycrystalline silicon TFT to drive.Yet the layer polysilicon film of preparation low temperature polycrystalline silicon TFT has two kinds of methods, and a kind of is the horizontal revulsion of metal (MILC), and another kind is quasi-molecule laser annealing (ELA).The low-temperature polysilicon film of MILC preparation is because metallic can't be removed fully, and the photoelectric properties of the TFT of its making can not reach the requirement of OLED device operate as normal.
At present, the employed low temperature polycrystalline silicon TFT of the active OLED product substrate of selling on the market all is that the quasi-molecule laser annealing method that adopts realizes, this method prepares low-temperature polysilicon film following weak point: one, the price of ELA equipment is very expensive, the chances are for the price of an ELA production equipment more than ten million dollar, causes the increase of the preparation cost of low-temperature polysilicon film substrate.Its two, need the long time with the ELA method at crystallizing amorphous silicon thin film, increase the manufacturing cycle of low-temperature polysilicon film substrate, the production capacity of corresponding production line will be affected.
Summary of the invention
The objective of the invention is to reduce the preparation cost of low-temperature polysilicon film substrate, propose a kind of TFT substrate and preparation method thereof with Micro Channel Architecture in order to improve the production efficiency of low-temperature polysilicon film substrate.
The TFT substrate of this Micro Channel Architecture comprises glass substrate, it is characterized in that: also comprise amorphous silicon membrane and be positioned at amorphous silicon membrane two-layer MgO film up and down, wherein one deck MgO film (3) is attached on the glass substrate.
The thickness of described amorphous silicon membrane is 0.1-0.2 μ m, and the thickness of described MgO film is 0.1-0.2 μ m.
The preparation method of the TFT substrate of this Micro Channel Architecture comprises the steps: A, the MgO of lower floor depositing of thin film: glass substrate is put on the substrate holder of Sputter equipment, system is vacuumized, glass substrate is heated, open radio-frequency power supply then, carry out the even growth of MgO film, till reaching required thickness; The deposition of B, intermediate layer amorphous silicon membrane: the substrate that steps A obtains is put on the substrate holder of PECVD, system is vacuumized, glass substrate is heated, reacting gas material silane is sent in the PECVD reaction cavity by the gas access device, requirement according to amorphous silicon membrane thickness, the flow of adjustments of gas is opened the reative cell power supply then and is made gas produce glow discharge in reaction cavity to required value, makes amorphous silicon membrane just grow into required thickness uniformly on glass substrate; C, upper strata MgO thin film deposition: the substrate that step B obtains is put on the substrate holder of Sputter equipment, system is vacuumized, glass substrate is heated, open radio-frequency power supply then, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness.
In steps A and C, the temperature of glass substrate is about 270-330 ℃, and the temperature of glass substrate is 180-220 ℃ in step B.
The present invention has the following advantages:
One, used the TFT substrate of Micro Channel Architecture, compare with low-temperature polysilicon film, because the amorphous silicon membrane layer is clipped between the two-layer MgO thin layer, the amorphous silicon membrane of this structure has such characteristic: because the secondary electron yield of MgO film is big, arrive the MgO film when electron bombard, can obtain the more freedom electronics with certain energy.Promptly under not alive situation, its resistivity is very big; If but add that greater than certain threshold voltage produce free charge carrier (electronics) seldom in the amorphous silicon membrane, directional migration under electric field action when electronics and MgO film bump, can be taken more charge carrier out of from the MgO film.Change an angle, after the TFT of this Micro Channel Architecture substrate is adding certain voltage, have higher carrier mobility.In this case, with the TFT of Micro Channel Architecture amorphous silicon membrane preparation, its performance should approach the TFT performance of low-temperature polysilicon film preparation.
Two, the TFT substrate with this Micro Channel Architecture prepares the TFT that OLED uses, and when not reducing its driveability, has reduced the cost of manufacture of TFT substrate significantly, effective simplification the preparation technology of TFT substrate.
Three, the TFT substrate with this Micro Channel Architecture prepares the TFT that OLED uses, and can also greatly improve the production production capacity of TFT substrate simultaneously, has reduced the preparation time cycle of TFT substrate.
Description of drawings
Accompanying drawing is a specific embodiment of the invention TFT substrate schematic diagram.
Embodiment
Embodiment one:
The TFT substrate of present embodiment Micro Channel Architecture, be to be that MgO film and the intermediate layer of 0.1 μ m is that thickness is that 0.2 μ m amorphous silicon membrane and glass substrate constitute by two layers of thickness up and down, the carrier mobility of resulting this amorphous silicon membrane is that 43cm2/V-is about second (employing ACCENT HL5500PC type Hall effect test macro).The carrier mobility of the conventional amorphous silicon membrane of non-doping is 0.3-1.2cm2/V-second.The carrier mobility of low-temperature polysilicon film is 150-300cm2/V-second
The doped amorphous silicon film and the making step of present embodiment are as follows:
1. the MgO of lower floor depositing of thin film.The glass substrate that cleans up is put on the substrate holder of Sputter (sputter) equipment, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 300 ℃, so that the even growth of film on glass substrate.Open radio-frequency power supply, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness, then finished the MgO of lower floor depositing of thin film process.
2. the deposition of intermediate layer amorphous silicon membrane.The substrate that previous step obtains is put on the substrate holder of PECVD, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 200 ℃, so that the even growth of film on glass substrate.Reacting gas material (silane) is sent in the PECVD reaction cavity by the gas access device, and according to the requirement of amorphous silicon membrane thickness, the flow of adjustments of gas is to required value.Opening the reative cell power supply makes gas produce glow discharge in reaction cavity.Just growth uniformly on glass substrate of amorphous silicon membrane like this when required thickness is arrived in film growth, has then been finished the deposition process of amorphous silicon membrane.
3. upper strata MgO thin film deposition.The substrate that previous step obtains is put on the substrate holder of Sputter equipment, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 300 ℃, so that the even growth of film on glass substrate.Open radio-frequency power supply, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness, then finished upper strata MgO depositing of thin film process.
The TFT substrate that makes as shown in drawings.Wherein, 1 is glass substrate, and 2 is amorphous silicon membrane, and 3 is the MgO film.
Embodiment two:
The TFT substrate of present embodiment Micro Channel Architecture, be to be that MgO film and the intermediate layer of 0.2 μ m is that thickness is that 0.1 μ m amorphous silicon membrane constitutes by two layers of thickness up and down, the carrier mobility of resulting this amorphous silicon membrane is that 58cm2/V-is about second (employing ACCENT HL5500PC type Hall effect test macro).The carrier mobility of the conventional amorphous silicon membrane of non-doping is 0.3-1.2cm2/V-second.The carrier mobility of low-temperature polysilicon film is 150-300cm2/V-second
The doped amorphous silicon film and the making step of present embodiment are as follows:
1. the MgO of lower floor depositing of thin film.The glass substrate that cleans up is put on the substrate holder of Sputter equipment, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 300 ℃, so that the even growth of film on glass substrate.Open radio-frequency power supply, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness, then finished the MgO of lower floor depositing of thin film process.
2. the deposition of intermediate layer amorphous silicon membrane.The substrate that previous step obtains is put on the substrate holder of PECVD, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 200 ℃, so that the even growth of film on glass substrate.Reacting gas material (silane) is sent in the PECVD reaction cavity by the gas access device, and according to the requirement of amorphous silicon membrane thickness, the flow of adjustments of gas is to required value.Opening the reative cell power supply makes gas produce glow discharge in reaction cavity.Just growth uniformly on glass substrate of amorphous silicon membrane like this when required thickness is arrived in film growth, has then been finished the deposition process of amorphous silicon membrane.
3. upper strata MgO thin film deposition.The substrate that previous step obtains is put on the substrate holder of Sputter equipment, system is vacuumized, meet the requirements of pressure.According to test requirements document, glass substrate is heated, generally require the temperature of glass substrate to reach about 300 ℃, so that the even growth of film on glass substrate.Open radio-frequency power supply, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness, then finished upper strata MgO depositing of thin film process.
The TFT substrate performance of the Micro Channel Architecture that the present invention is above-mentioned and making step and amorphous silicon membrane performance and making step, low-temperature polysilicon film performance and making step be compared as follows table:
Above content be in conjunction with concrete preferred implementation to further describing that the present invention did, can not assert that concrete enforcement of the present invention is confined to these explanations.For the general technical staff of the technical field of the invention, without departing from the inventive concept of the premise, can also make some simple deduction or replace, all should be considered as belonging to protection scope of the present invention.
Claims (4)
1. the TFT substrate of a Micro Channel Architecture comprises glass substrate (1), it is characterized in that: also comprise amorphous silicon membrane (2) and be positioned at amorphous silicon membrane (2) two-layer MgO film (3) up and down, wherein one deck MgO film (3) is attached on the glass substrate (1).
2. the TFT substrate of Micro Channel Architecture as claimed in claim 1, it is characterized in that: the thickness of described amorphous silicon membrane is 0.1-0.2 μ m, the thickness of described MgO film is 0.1-0.2 μ m.
3. the preparation method of the TFT substrate of a Micro Channel Architecture is characterized in that comprising the steps:
A, the MgO of lower floor depositing of thin film: glass substrate is put on the substrate holder of Sputter equipment, system is vacuumized, glass substrate is heated, open radio-frequency power supply then, carry out the even growth of MgO film, till reaching required thickness;
The deposition of B, intermediate layer amorphous silicon membrane: the substrate that steps A obtains is put on the substrate holder of PECVD, system is vacuumized, glass substrate is heated, reacting gas material silane is sent in the PECVD reaction cavity by the gas access device, requirement according to amorphous silicon membrane thickness, the flow of adjustments of gas is opened the reative cell power supply then and is made gas produce glow discharge in reaction cavity to required value, makes amorphous silicon membrane just grow into required thickness uniformly on glass substrate;
C, upper strata MgO thin film deposition: the substrate that step B obtains is put on the substrate holder of Sputter equipment, system is vacuumized, glass substrate is heated, open radio-frequency power supply then, regulate technological parameter, carry out the even growth of MgO film, till reaching required thickness.
4. the TFT substrate of Micro Channel Architecture as claimed in claim 3, it is characterized in that: in steps A and C, the temperature of glass substrate is about 270-330 ℃, and the temperature of glass substrate is 180-220 ℃ in step B.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243305A (en) * | 2013-04-22 | 2013-08-14 | 兰州空间技术物理研究所 | Secondary electron emission film preparation method |
| CN103762247A (en) * | 2014-01-10 | 2014-04-30 | 北京京东方光电科技有限公司 | Thin film transistor, manufacturing method for thin film transistor, array substrate and organic light-emitting display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20040206911A1 (en) * | 2000-03-16 | 2004-10-21 | Bruce Laprade | Bipolar time-of-flight detector, cartridge and detection method |
| CN101137256A (en) * | 2006-08-30 | 2008-03-05 | 三星康宁株式会社 | Surface light source device having secondary electron emission layer, method of manufacturing the same, and backlight unit having the same |
| CN101150030A (en) * | 2007-08-13 | 2008-03-26 | 深圳大学 | Method for manufacturing silicon microchannel plate secondary electron emission layer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206911A1 (en) * | 2000-03-16 | 2004-10-21 | Bruce Laprade | Bipolar time-of-flight detector, cartridge and detection method |
| CN101137256A (en) * | 2006-08-30 | 2008-03-05 | 三星康宁株式会社 | Surface light source device having secondary electron emission layer, method of manufacturing the same, and backlight unit having the same |
| CN101150030A (en) * | 2007-08-13 | 2008-03-26 | 深圳大学 | Method for manufacturing silicon microchannel plate secondary electron emission layer |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103243305A (en) * | 2013-04-22 | 2013-08-14 | 兰州空间技术物理研究所 | Secondary electron emission film preparation method |
| CN103243305B (en) * | 2013-04-22 | 2015-06-10 | 兰州空间技术物理研究所 | Secondary electron emission film preparation method |
| CN103762247A (en) * | 2014-01-10 | 2014-04-30 | 北京京东方光电科技有限公司 | Thin film transistor, manufacturing method for thin film transistor, array substrate and organic light-emitting display panel |
| WO2015103837A1 (en) * | 2014-01-10 | 2015-07-16 | 京东方科技集团股份有限公司 | Thin-film transistor and manufacturing method therefor, array substrate and organic light-emitting display panel |
| US20160043152A1 (en) * | 2014-01-10 | 2016-02-11 | Boe Technology Group Co., Ltd. | Thin film transistor and manufacturing method thereof, array substrate and organic light emitting display panel |
| CN103762247B (en) * | 2014-01-10 | 2016-07-06 | 北京京东方光电科技有限公司 | Thin film transistor (TFT), array base palte and preparation method thereof and organic electroluminescence display panel |
| US10186562B2 (en) * | 2014-01-10 | 2019-01-22 | Boe Technology Group Co., Ltd. | Thin film transistor and manufacturing method thereof, array substrate and organic light emitting display panel |
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