CN101847828A - Vertical launching quantum cascade laser structure - Google Patents
Vertical launching quantum cascade laser structure Download PDFInfo
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- CN101847828A CN101847828A CN 201010171511 CN201010171511A CN101847828A CN 101847828 A CN101847828 A CN 101847828A CN 201010171511 CN201010171511 CN 201010171511 CN 201010171511 A CN201010171511 A CN 201010171511A CN 101847828 A CN101847828 A CN 101847828A
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Abstract
The invention provides a vertical launching quantum cascade laser structure comprising a substrate and a metal grating layer, wherein a waveguide layer, an active layer and a contact layer sequentially grow on the substrate; and the metal grating layer is positioned on the contact layer and has a secondary Bragg period.
Description
Technical field
The present invention relates to the semiconductor photoelectric device technical field, relate in particular to a kind of vertical launching quantum cascade laser structure.The unique distinction of this structure is, surface plasma-wave is guided in the two-grade grating distributed feed-back vertical launching quantum cascade laser, can realize high vertical coupled efficient, has simplified material growth and grating preparation technology simultaneously.
Background technology
Wavelength is that the quantum cascade laser of 8 ~ 12 μ m has very wide application prospect in fields such as atmosphere environment supervision and infrared counteraction.Different with the multimode operation that the Fabry-Perot-type cavity quantum cascade laser of routine is had with the limit emission, vertical launching quantum cascade laser possesses the advantage of single mode operation and Vertical Launch simultaneously, in the application of reality, can realize the integrated and online detection of two dimension, therefore be paid close attention to widely and study.
Current vertical launching quantum cascade laser mainly contains 2 D photon crystal distributed feed-back vertical launching quantum cascade laser and two-grade grating distributed feed-back vertical launching quantum cascade laser.Wherein, 2 D photon crystal distributed feed-back vertical launching quantum cascade laser requires its photonic crystal pattern to possess very high aspect ratio, require its fill factor, curve factor or the ABSORPTION EDGE can precise design and control simultaneously, but make the photonic crystal pattern that satisfies these requirements, for present photoetching process, but be a very big challenge.And by contrast, preparation technology is simple relatively for its grating of two-grade grating distributed feed-back vertical launching quantum cascade laser, therefore become a focus of vertical launching quantum cascade laser research in the world, and obtained deep research in the middle of in the past 10 years.
Although the further investigation to two-grade grating distributed feed-back vertical launching quantum cascade laser has obtained more achievement, comprise that the room temperature pulse swashs the far-field divergence angle of penetrating with 0.4 degree, these research major parts all are based on traditional dielectric waveguide structure.Though dielectric waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser has lower optical loss, its very thick ducting layer makes the material growth very difficult, and it is very dark that its grating requires etching simultaneously, and this makes etching technics very complicated again.Grow and preparing grating technology so design a kind of material of can simplifying, the two-grade grating distributed feed-back vertical launching quantum cascade laser structure that can improve vertical coupled efficient simultaneously again is a problem demanding prompt solution, and this patent is exactly to invent for this reason.
Summary of the invention
The objective of the invention is to, a kind of surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser structure is provided.This structure adopts very thin contact layer to replace very thick ducting layer in the traditional sucrose waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, has therefore simplified the material growth; Simultaneously only adopt metal grating just to realize very strong coupling, do not need the etching semiconductor layer, this has simplified etching technics.In addition, the employing of surface plasma waveguide makes the overlapping of laser light field and grating increase, and by optimizing the duty ratio of metal in the grating, has finally obtained very strong vertical coupled efficient simultaneously.
The invention provides a kind of vertical launching quantum cascade laser structure, comprising:
One substrate, growth has ducting layer, active layer and contact layer successively on this substrate;
Metal grating layer, this metal grating layer be positioned at contact layer above, and this metal grating layer has secondary Bragg period.
Wherein said substrate is the InP substrate.
The material of wherein said ducting layer is InGaAs, and this ducting layer mixes for the n type, and doping content is 6 * 10
16Cm
-3, bed thickness is 0.55 μ m.
Wherein said active layer is made up of the InGaAs/InAlAs in 40 cycles, and the wavelength of this active layer correspondence is 8-12 μ m.
The material of wherein said contact layer is InGaAs, and doping content is 1 * 10
19Cm
-3, bed thickness is 0.05 μ m.
The material of wherein said metal grating layer is a silver, and the thickness of this metal grating layer 14 is 0.25 μ m, and the duty ratio of metal is 0.55.
Wherein said metal grating layer is divided into 4 segment structures on contact layer.
Description of drawings
In order to further specify feature of the present invention and effect, the present invention is described further below in conjunction with drawings and the specific embodiments, wherein:
Fig. 1 is embodiments of the invention, and it is the waveguide of plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser and the schematic cross-section of two-grade grating structure.
Fig. 2 is for to press among the described embodiment of Fig. 1, and the coupling coefficient of plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser is along with the variation relation figure of metal grating duty ratio.
Fig. 3 is for to press among the described embodiment of Fig. 1, and the vertical coupled efficient of the plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser that different cavity is long is along with the variation relation figure of metal grating duty ratio.
Fig. 4 is for to press among the described embodiment of Fig. 1, and the gain for threshold value of the plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser that different cavity is long is along with the variation relation figure of metal grating duty ratio.
Embodiment
See also shown in the figure, the invention provides a kind of vertical launching quantum cascade laser structure, comprising:
One substrate 10, growth has ducting layer 11, active layer 12 and contact layer 13 successively on this substrate 10; Described substrate 10 is the InP substrate; The material of described ducting layer 11 is InGaAs, and this ducting layer 11 mixes for the n type, and doping content is 6 * 10
16Cm
-3, bed thickness is 0.55 μ m; Described active layer 12 is made up of the InGaAs/InAlAs in 40 cycles, and the wavelength of this active layer correspondence is 8-12 μ m; The material of described contact layer 13 is InGaAs, and doping content is 1 * 10
19Cm
-3, bed thickness is 0.05 μ m;
The advantage of this structure is: InGaAs contact layer 13 very thin thickness above (1) active layer 12, and in traditional dielectric waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, ducting layer above the active layer is very thick, generally be approximately 3 μ m, by contrast, the present invention has simplified the material growth.(2) employing of plasma waveguide only makes that the etching two-grade grating just can be realized very strong coupling on metal level, and in traditional dielectric waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, etching is finished after the two-grade grating on metal level, still need etching depth on the semiconductor layer below to be approximately the grating of 1 μ m, by contrast, the present invention has also simplified etching technics.(3) surface plasma-wave is guided into after the two-grade grating distributed feed-back vertical launching quantum cascade laser, duty ratio by metal in the optimization metal grating layer 14 is 0.55, the present invention has obtained 43% vertical coupled efficient, this compares with about 20% vertical coupled efficient in the traditional dielectric waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, is again a bigger improvement.
Waveguiding structure and the two-grade grating structure Design foundation and the method for designing of the above-mentioned plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser that provides below are provided in detail.
Two-grade grating distributed feed-back vertical launching quantum cascade laser utilize two-grade grating to the vertical diffraction of light and obtain Vertical Launch, the coupling coefficient of its grating has directly determined the performance of device.And the size of coupling coefficient depends primarily on two factors, i.e. the difference of the pattern effective refractive index at grating bottom and grating top and the overlapping degree of light field and grating.In the surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, the waveguiding structure at place, grating bottom is owing to adopt air as cover layer, and its light field pattern belongs to the dielectric waveguide mould; Yet the waveguiding structure at place, grating top is owing to adopt argent as cover layer, and its light field pattern belongs to the surface plasma mould, and the difference of the mode refractive index between these two kinds of guided wave modes is very large.In addition, the introducing of surface plasma waveguide makes more close grating one side of light field, thereby has caused bigger light field and the overlapping between grating.To sum up, in the surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, pattern effective refractive index bigger between the waveguiding structure at grating bottom and place, top is poor, and bigger overlapping between grating and the light field, caused very big coupling coefficient, as shown in Figure 2.
According to the coupled mode theory of the long structure in the theoretical and limited chamber of the Floquet-Bloch of unlimited chamber long periodicity structure, the duty ratio of metal influences the vertical coupled efficient and the gain for threshold value of surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser strongly in the metal grating layer 14.As shown in Figure 3, when duty ratio less (duty ratio is less than 0.3),, cause the overlapping between light field and grating less, so vertical coupled efficient is very little because metal ratio is less in the grating layer.When duty ratio big (duty ratio is greater than 0.7), though bigger metal ratio has guaranteed bigger light field and the overlapping between grating in the grating layer, but the pattern effective refractive index difference of place, grating top and grating bottom this moment waveguiding structure is along with the formed perturbation intensity of grating cyclic variation is very little, and both cancel out each other and cause less vertical coupled efficient.Gain for threshold value for surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, as shown in Figure 4, when duty ratio hour, gain for threshold value is bigger, it is less that this comes from the grating layer metal ratio, makes light field well not be limited in active area.In addition, when duty ratio is near 0.6 the change once more of gain for threshold value big, this is because the bigger cause of face coupling loss herein.To sum up, in order to obtain big vertical coupled efficient, keep relatively low gain for threshold value simultaneously, the duty ratio of metal is optimised for 0.55 in the metal grating layer.Under this duty ratio, the vertical coupled efficient of surface plasma waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser and gain for threshold value are respectively 43% and 12cm
-1, and in traditional dielectric waveguide two-grade grating distributed feed-back vertical launching quantum cascade laser, corresponding value is respectively 17.5% and 20cm
-1, this shows that the present invention has good effect.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. vertical launching quantum cascade laser structure comprises:
One substrate, growth has ducting layer, active layer and contact layer successively on this substrate;
Metal grating layer, this metal grating layer be positioned at contact layer above, and this metal grating layer has secondary Bragg period.
2. by the described vertical launching quantum cascade laser structure of claim 1, wherein said substrate is the InP substrate.
3. by the described vertical launching quantum cascade laser structure of claim 1, the material of wherein said ducting layer is InGaAs, and this ducting layer mixes for the n type, and doping content is 6 * 10
16Cm
-3, bed thickness is 0.55 μ m.
4. by the described vertical launching quantum cascade laser structure of claim 1, wherein said active layer is made up of the InGaAs/InAlAs in 40 cycles, and the wavelength of this active layer correspondence is 8-12 μ m.
5. by the described vertical launching quantum cascade laser structure of claim 1, the material of wherein said contact layer is InGaAs, and doping content is 1 * 10
19Cm
-3, bed thickness is 0.05 μ m.
6. by the described vertical launching quantum cascade laser structure of claim 1, the material of wherein said metal grating layer is a silver, and the thickness of this metal grating layer 14 is 0.25 μ m, and the duty ratio of metal is 0.55.
7. by the described vertical launching quantum cascade laser structure of claim 1, wherein said metal grating layer is divided into 4 segment structures on contact layer.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103887709A (en) * | 2014-03-20 | 2014-06-25 | 中国科学院半导体研究所 | Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser |
| CN104662750A (en) * | 2012-02-28 | 2015-05-27 | 康宁股份有限公司 | Surface emitting multiwavelength distributed-feedback concentric ring lasers |
| CN105846304A (en) * | 2016-04-24 | 2016-08-10 | 西南技术物理研究所 | All-solid-state high-power medium-long wave laser optical parameter amplifier |
| CN106415954A (en) * | 2014-04-07 | 2017-02-15 | 丹麦技术大学 | Vcsel structure |
| CN109244822A (en) * | 2018-11-01 | 2019-01-18 | 中国科学院上海技术物理研究所 | For measuring the device and measurement method of Terahertz quantum cascaded laser gain |
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| US5727013A (en) * | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
| US6810053B1 (en) * | 1999-08-13 | 2004-10-26 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
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2010
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| US5727013A (en) * | 1995-10-27 | 1998-03-10 | Wisconsin Alumni Research Foundation | Single lobe surface emitting complex coupled distributed feedback semiconductor laser |
| US6810053B1 (en) * | 1999-08-13 | 2004-10-26 | Wisconsin Alumni Research Foundation | Single mode, single lobe surface emitting distributed feedback semiconductor laser |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104662750A (en) * | 2012-02-28 | 2015-05-27 | 康宁股份有限公司 | Surface emitting multiwavelength distributed-feedback concentric ring lasers |
| CN104662750B (en) * | 2012-02-28 | 2017-09-05 | 康宁股份有限公司 | Surface emitting multi-wavelength distributed feed-back annular concentric laser |
| US10811845B2 (en) | 2012-02-28 | 2020-10-20 | Thorlabs Quantum Electronics, Inc. | Surface emitting multiwavelength distributed-feedback concentric ring lasers |
| CN103887709A (en) * | 2014-03-20 | 2014-06-25 | 中国科学院半导体研究所 | Asymmetric metal grating and coating semiconductor multi-quantum-well waveguide laser |
| CN106415954A (en) * | 2014-04-07 | 2017-02-15 | 丹麦技术大学 | Vcsel structure |
| CN105846304A (en) * | 2016-04-24 | 2016-08-10 | 西南技术物理研究所 | All-solid-state high-power medium-long wave laser optical parameter amplifier |
| CN109244822A (en) * | 2018-11-01 | 2019-01-18 | 中国科学院上海技术物理研究所 | For measuring the device and measurement method of Terahertz quantum cascaded laser gain |
| CN109244822B (en) * | 2018-11-01 | 2021-01-01 | 中国科学院上海技术物理研究所 | Device and method for measuring gain of terahertz quantum cascade laser |
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| CN101847828B (en) | 2012-03-28 |
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