CN101840996A - Printed semiconductor transistor and forming method thereof - Google Patents
Printed semiconductor transistor and forming method thereof Download PDFInfo
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- CN101840996A CN101840996A CN200910119877A CN200910119877A CN101840996A CN 101840996 A CN101840996 A CN 101840996A CN 200910119877 A CN200910119877 A CN 200910119877A CN 200910119877 A CN200910119877 A CN 200910119877A CN 101840996 A CN101840996 A CN 101840996A
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Abstract
The invention discloses a printed semiconductor transistor and a forming method thereof. Particularly, the method for forming the semiconductor transistor comprises the steps of: printing a grid on a substrate; printing a grid dielectric film; printing a source electrode and a drain electrode; printing a semiconductor film; and forming a passive dielectric film. The invention also discloses the printed semiconductor transistor. The method of the invention can provide the nano-scale semiconductor transistor conveniently in a printing mode, greatly reduces the conventional cost, maintains the performance of the semiconductor transistor, and has great practicability and bright economic prospect; and the semiconductor transistor printing technology of the invention can be performed at normal temperature and normal pressure, so a high-temperature vacuum film-coating process and a high-priced photo-etching process are avoided and the manufacturing is simpler. Therefore, the manufacturing cost is greatly saved and the current requirements on environmental protection are met.
Description
Technical field
The present invention relates to semiconductor transistor and forming method thereof; More specifically, relate to a kind of printed semiconductor transistor and forming method thereof.
Background technology
Traditional semiconductor transistor is matrix with the silicon chip, the technology that forms semiconductor transistor generally be on silicon substrate by deposition materials and use mask to carry out photoetching or etching, make most of material be wasted in fact, economical inadequately on cost.In addition, current semiconductor transistor manufacturing process is to carry out in vacuum environment under hot conditions, must use tradition expensive circuitous pattern equipment and dust free room, makes its manufacturing process complexity, flow process control difficulty relatively, and with high costs.In addition, silicon chip also has size restrictions, and current can't being implemented in forms semiconductor transistor (for example, current silicon single crystal wafer is limited to below 12 inches basically) on large-sized silicon chip.Therefore, a large amount of at present technologies of making semiconductor transistor are to make semiconductor transistor on each silicon chip respectively.This needs expensive picking up to put formula semiconductor chip treatment facility, makes more complicated, and efficient is not high yet.
Therefore, need a kind of improved semiconductor crystal pipe manufacturing method, this method technology is simple, efficient is higher, with low cost, satisfy environmental requirement.
Summary of the invention
In order to solve prior art problems, the invention provides method and related transistor that printing-type forms semiconductor transistor.
According to an aspect of the present invention, provide a kind of method that forms semiconductor transistor, having comprised: print gates on matrix; Printing grid dielectric film; Printing source electrode and drain electrode; The printed semiconductor film; And formation passivation dielectric film.According to the present invention, described matrix includes organic polymer, silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix or the like.In some embodiments, after the printed semiconductor film, can also form Metal Contact.
In one embodiment of the invention, for polymeric matrix, said method carries out surface passivation to form hydrophilic or hydrophobic surface to described matrix before also being included in the described grid of printing, perhaps uses rotation or splash coating process to plate the dielectric film layer on the surface of described matrix and carry out maturation process.
In one embodiment of the invention, for silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix matrix, said method also is included in before the described grid of printing, in acidity, alkaline electrolyte or neutral solution, make sull, perhaps use rotation or splash coating process to plate the dielectric film layer on the surface of described matrix and carry out maturation process.
In one embodiment of the invention, the operation of formation passivation dielectric film comprises ink jet printing passivation dielectric film.In another embodiment of the invention, the operation that forms the passivation dielectric film comprises the slaking of printing macromolecule, and described macromolecule comprises epoxides, polyimides.According to another embodiment of the present invention, the operation that forms the passivation dielectric film comprises the laminating technology seal.
According to the present invention, said method can also be included in after the printing grid dielectric film, carries out the stove case and quench or laser quenching in gaseous environment, to form gate oxide or grid nitride, perhaps gate oxide and grid nitride, the metal film of the described grid of sintering simultaneously.
According to the present invention, said method can also carry out the stove case and quench or laser quenching after the printed semiconductor film in gaseous environment.
According to the present invention, said method can also be included in and form after the passivation dielectric film, carries out the stove case and quench or laser quenching in gaseous environment.
According to the present invention, if described matrix is an organic polymer, then described stove case quenches and carries out at 100 degrees centigrade to 300 degrees centigrade; If described matrix is selected from the group of being made up of silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix, then described stove case quenches and carries out at 100 degrees centigrade to 1000 degrees centigrade.
Printing technology of the present invention can comprise printing ink spray printing technology, section's formula lithographic printing, surface printing technology, intaglio technology or the like multiple printing technology.According to the preferred embodiments of the invention, form grid, source electrode, drain electrode, dielectric film and semiconductor film in the mode of inkjet printing.
According to the present invention, semiconductor film can be pentacene and derivative thereof.Grid can comprise metal silicide, for example nickle silicide, cobalt silicide, palladium silicide, platinum silicide, titanium silicide, tungsten silicide or the like.Replacedly, grid can comprise the metal such as palladium, tungsten, molybdenum, aluminium, silver or the like.
According to the preferred embodiments of the invention, for silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix, the operation of printing source electrode and drain electrode comprises that printing the nano silicon particles slurry China ink that comprises boron forms N+ type polycrystalline/amorphous silicon, and the operation of printed semiconductor film comprises that printing the nano silicon particles slurry China ink that comprises phosphorus or arsenic forms P-type polycrystalline/amorphous silicon, to make the N transistor npn npn.Perhaps, the operation of printing source electrode and drain electrode comprises that printing the nano silicon particles slurry China ink that comprises phosphorus or arsenic forms P+ type polycrystalline/amorphous silicon, and the operation of printed semiconductor film comprises that printing the nano silicon particles slurry China ink that comprises boron forms N-type polycrystalline/amorphous silicon, to make the P transistor npn npn.
In a preferred embodiment of the invention, described method is printed HSQ, polysilazane or its combination before also being included in the described grid of printing on described matrix, forms silicon nitride to quench under nitrogen environment; The operation of printing grid dielectric film then comprises printing HSQ, polysilazane or its combination, forms silicon nitride to quench under nitrogen environment; And the operation that forms the passivation dielectric film comprises printing HSQ, polysilazane or its combination, forms silicon nitride to quench under nitrogen environment.
According to a further aspect in the invention, provide a kind of semiconductor transistor, having comprised: matrix; The grid that on described matrix, prints; The grid dielectric film that on described grid, prints; Source electrode that on described matrix, prints and drain electrode; Printed semiconductor film in described source electrode and drain electrode; And the dielectric film of passivation.
Method of the present invention can provide micron-sized semiconductor transistor easily with mode of printing, greatly reduces original cost and has kept the performance of semiconductor transistor simultaneously.Semiconductor transistor with method manufacturing of the present invention can be applied to opto-electronic device, transducer (comprising biology sensor), radio electronic label (RFID), backboard light source and various application scenarios such as backboard pixel, small-capacity memory, has practicality and bright economic outlook widely.
Those skilled in the art can see; compare with conventional semiconductor transistor formation technology; the printing-type technical scheme of the application of the invention forms semiconductor transistor; can carry out at normal temperatures and pressures; avoided the high-temperature vacuum environment requirement; technology is also more simple, thereby has significantly saved manufacturing cost, and also meets current demand for environmental protection.
Description of drawings
In order to understand the mode that obtains embodiments of the invention, provide description more specifically with reference to the accompanying drawings to each embodiment of the present invention that sketches above.
Understand these also nonessential accompanying drawings of drawing in proportion and only describe exemplary embodiments of the present invention, and therefore do not plan to be regarded as limiting the scope of the invention, by using accompanying drawing, will describe and explain the present invention in conjunction with extra details and details, in the accompanying drawings:
Fig. 1 illustrates the exemplary method flowchart of semiconductor transistor formed according to the present invention.
Fig. 2 illustrates with the organic plastics profile of the semiconductor transistor that is matrix formation.
Fig. 3 illustrates with the stainless steel profile of the semiconductor transistor that is matrix formation.
It is the exemplary method flowchart of the semiconductor transistor of matrix with the stainless steel that Fig. 4 illustrates formed according to the present invention.
Embodiment
Behind the specification of reading the front, for those of ordinary skills, a lot of variations of the present invention and modification will become obviously undoubtedly, thus, should be appreciated that any specific embodiment shown by graphic technique and that describe never should be regarded as restrictive.Therefore, relate to the details of different embodiments, should not be regarded as the restriction to claims scope, described claims itself only state that those are as feature of the present invention.
Before describing this method, system and material, be appreciated that the disclosure is not limited to described ad hoc approach, system and material, because these can change.It is also understood that the term that uses only is used to describe the purpose of particular version or embodiment in this description, and do not plan limited field.
At first with reference to Fig. 1, Fig. 1 illustrates the exemplary method flowchart of semiconductor transistor formed according to the present invention.In step 101, clean matrix and carry out necessary surface treatment.In the present invention, matrix can be organic polymer (for example organic plastics or the like) matrix, glass basis, silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix or the like, but the present invention is not limited to this, and those skilled in the art can substitute with other applicable matrixes.Can remove matrix surface pollutant, the carrying out of convenient subsequent treatment by the clear base surface.Above-mentioned surface treatment can comprise surface passivation, surface anodization or coating film treatment.In one embodiment, matrix surface is carried out surface passivation, thereby obtain hydrophilic or hydrophobic surface.In another embodiment, can use rotary plating or splash coating process, plate the dielectric film layer, carry out maturation process subsequently at matrix surface.Replacedly, for such as metal or stainless steel base etc., can be such as acidic electrolysis bath liquid such as sulfuric acid, hydrochloric acid, perhaps such as NaOH, the alkaline electrolyte of potassium hydroxide solution, the sull of perhaps making thickness in the neutral solution and be 0.1～10 micron is as dielectric insulation film uniformly.The processing that it will be understood by those skilled in the art that matrix surface can avoid forming on the matrix mismatch of other films and matrix, improves the adhesion property of matrix and the film on it and/or is deposited the diffusion of material thereon.
After matrix surface having been carried out processing, in step 102, can on treated matrix, carry out printing operation, thereby form grid.In one embodiment, grid can comprise metal silicide, for example nickle silicide, cobalt silicide, palladium silicide, platinum silicide, titanium silicide, tungsten silicide or the like.In another embodiment, grid can comprise the metal such as palladium, tungsten, molybdenum, aluminium, silver or the like.The technology of print gates can be selected according to application in step 102, for example can use printing ink spray printing technology, section's formula lithographic printing, letterpress technology, intaglio printing technology, screen printing technology or the like.
In a preferred embodiment, can carry out the next metal gates that on matrix, forms of various conductors such as silver-colored ink-jet or spray printing CNT (carbon nano-tube) on the matrix by ink-jet printing process.
Under the situation of silver-colored ink-jet, be that the printhead at ink-jet printer applies high voltage, make the ink dot explosion of printer become miniature ink dot.By using the printing ink of forming by silver particles and organic solvent, can on matrix, ink-jet form the silver wiring.The ink dot of smaller szie makes that having potential destructive solvent in the printing ink can evaporate sooner, thereby safer.In addition, ink jet printing mode can be carried out at normal temperatures and pressures, further, metal nanoparticle can reduce the temperature of fusing and sintering, thereby the extra cost of having avoided high temperature and vacuum treatment to be brought, and by contrast, it is impaired that lower temperature can make matrix be not easy.Above-mentioned silver-colored printing ink for example can obtain from CABOT or SunJet company commercial.SunJet successfully disperses and has stablized silver-colored particle, and has obtained injection characteristics extremely reliably.According to embodiments more of the present invention, the width of formed silver wiring can arrive about 500 microns scope at about 0.1 micron.Certainly, the present invention is unrestricted in this regard.
Certainly, in this step, can also use other materials on matrix, to form grid, and these replacement schemes all fall within the scope of the present invention with other mode of printings.
Then, printing grid dielectric films (step 103) on grid, this grid dielectric film of Quenching Treatment forms high-quality gate oxide, and while sintering grid metal films (step 104).Preferably, can for example be such as mixing fluorodioxy silicon (SiOF), HSQ ((HSiO at grid dielectric medium used in the present invention
1.5)
nBe dissolved in isobutyl group methane ketone), the dielectric material of polysilazane (Polysilazane) or MSQ.State that as top can use such as printing ink spray printing technology, section's formula lithographic printing, surface printing technology, intaglio technology or the like multiple printing technology and form the grid dielectric film, the present invention is not limited to this.In one embodiment of the invention, can use the HSQ ink-jet to form the grid dielectric film, and under the condition that gas (for example nitrogen etc.) exists, carry out the stove case and quench or laser quenching, thereby form gate oxide, and sintering grid metal film simultaneously.It will be understood by those skilled in the art that hardening heat can be different, for example,, can adopt about 100 ℃ of extremely about 300 ℃ stove casees to quench for polymeric matrix; And, can adopt higher temperature for silicon substrate, stainless steel base or metallic matrix, and for example about 100 ℃ of extremely about 300 ℃ stove casees quench, and the present invention is unrestricted in this regard.
At least on the part of grid dielectric film, can print source electrode and drain electrode (step 105), use semiconducting inks to come printed semiconductor film and quench (step 106) subsequently.According to embodiment of the present invention,, can also adopt pentacene (pentacene) and derivative thereof to form semiconductor film for polymeric matrix.And, preferably can form this semiconductor film with silicon China ink (printing ink that for example contains nano-silicon) for silicon materials matrix, stainless steel or metallic matrix.In embodiments of the invention, suitable semiconducting inks for example can comprise liquid phase (gathering) and/or (ring) silicomethane.In general, the liquid phase semiconducting inks can also comprise semi-conductor nano particles and solvent, and described semi-conductor nano particles is silicon nano, germanium nano particle or SiGe nano particle for example, and described solvent for example can be cycloalkanes.Printing ink by comprising IVA family element or mainly being made up of IVA family element (for example silicon of silicomethane or doping or the like) can print semiconductor film of the present invention.In another embodiment of the invention, can be with the silane mixture ink jet printing of hydrogen silicon and with about 500 degrees centigrade high-temperature baking, and anneal with excimer laser and to form this semiconductor film.
The applicant has been found that the printing ink that comprises nano-silicon has excellent performance.Main a kind of measurement factor is the field effect electron mobility.In the present invention, suitably quench and the field effect electron mobility of the nano-silicon of partially crystallizable approximately is 100 times of electron mobility in the organic semiconductor, also promptly about 100cm
2/ V.s in contrast to 1cm
2/ V.s.
Particularly in organic semiconductor transistor, the electronic behavior of present organic transistor is less than 1cm
2/ V.s, and by contrast, the silicone oil China ink that the present invention adopts has reached the electronic behavior suitable with polysilicon and (has been about 100cm
2/ V.s).In other words, technology of the present invention can be made enough fast semiconductor transistor together with the silicone oil China ink that is adopted, and can be applicable to RFID and most of other electrical interface agreements.
Silicone oil China ink adopts and adds French technology, therefore lossy material all enter in the circuit.By contrast, traditional silicon technology then adopts contrapositive or subtraction formula technology, also is about to material and is paved with entire substrate, uses mask and various related process to etch away no material then, and in other words, in fact wide variety of materials is wasted.Those skilled in the art are not difficult to find out, use this French technology that adds in technology of the present invention, are to preserve all more economical at cost or resource.
At last, form passivation dielectric film (step 107).In one embodiment, can use typography preparation (as HSQ ink-jet or polysilazane ink-jet etc.) this passivation dielectric film.Replacedly or can additionally also can use and to print macromolecule (as epoxides, polyimides etc.) slaking, or use the laminating technology seal.
In a preferred embodiment of the invention, described method was printed HSQ, polysilazane or its combination on described matrix before the described grid of printing, formed silicon nitride to quench under nitrogen environment; In the step of printing grid dielectric film, carry out the operation of printing HSQ, polysilazane or its combination, form silicon nitride under nitrogen environment, to quench; And, in the step that forms the passivation dielectric film, carry out the operation of printing HSQ, polysilazane or its combination, form silicon nitride under nitrogen environment, to quench.It is good barrier layer that printing HSQ, polysilazane or its make up formed film, can be used as good grid dielectric film again, and still avoid the good barrier of moisture when passivation.
Those skilled in the art can understand, in such scheme, quenching technical is not limited in the step of above special instruction, and it can be applied to each step or be removed by some steps provinces, perhaps above-described a plurality of quenching step and combination are carried out, and the present invention is unrestricted in this regard.
In a preferred embodiment of the invention, can form semiconductor transistor in the mode of full inkjet printing.The stock utilization of inkjet printing is higher, waste still less.Especially, the ink-jet printer that can use the iTi company of " super ink-jet " device that SIJ technology company developed, air brushing machine that Spectra company produces or Colorado to be developed prints the formation fine pattern with small drop sizes.
Method of the present invention can provide nano level semiconductor transistor easily with mode of printing, greatly reduces original cost and has kept the performance of semiconductor transistor simultaneously.Semiconductor transistor with method manufacturing of the present invention can be applied to opto-electronic device, transducer (comprising biology sensor), radio electronic label (RFID), backboard light source and various application scenarios such as backboard pixel, small-capacity memory, has practicality and bright economic outlook widely.
Those skilled in the art can see; compare with conventional semiconductor transistor formation technology; the printing-type technical scheme of the application of the invention forms semiconductor transistor; can carry out at normal temperatures and pressures; avoided the high-temperature vacuum environment requirement; technology is also more simple, thereby has significantly saved manufacturing cost, and also meets current demand for environmental protection.
Those skilled in the art below certain preferred embodiments of the present invention will be described particularly, so that can more fully understand notion of the present invention.Should be appreciated that the following examples only are exemplary and nonrestrictive.
Embodiment 1: the semiconductor transistor of organic plastics matrix
The first embodiment of the present invention is to use the organic plastics matrix to come the printed semiconductor transistor.The organic plastics matrix is adapted to low-temp low-pressure technology.
Referring now to Fig. 2, Fig. 2 illustrates with the organic plastics profile of the semiconductor transistor that is matrix formation.At first, can carry out cleaning surfaces and remove the matrix surface pollutant organic plastics matrix 201.Afterwards, use rotary plating or splash coating process, plate the dielectric film layer at matrix surface, and maturation process.This dielectric film can be so that printing ink adheres to and diffusion better when printing miscellaneous part thereon afterwards.Certainly, this surface-treated operation also can be omitted, and this can't influence the performance of present embodiment, and still falls within the scope of the present invention.
On organic plastics matrix 201, be printed with metal gate 202.Metal gate 202 is to print with ink jet printing mode with the printing ink that contains nano-Ag particles.In the present embodiment, employing be the Yin Mo that Cabot company produces, volume resistivity is roughly 4 to 32mW cm.On organic plastics matrix 201, with the resolution of about 300dpi, less than the droplet size type metal grid 202 of about 30pl.Gains are heated to are lower than 150 degrees centigrade and keep and be cured in about 10 minutes.
Afterwards, by using (HSiO
1.5)
nThe printing ink that is dissolved in isobutyl group methane ketone solvent prints grid dielectric film 203 on the top of metal gates 202, and places the nitrogen protective gas with laser curing 7 minutes the dielectric film that forms, thereby forms high-quality gate oxide.According to embodiments more of the present invention, the live width of formed source electrode and drain electrode can be at about 0.1 micron to about 500 microns.Certainly, the present invention is unrestricted in this regard.
Subsequently, print the Metal Contact body of source electrode and drain electrode 205 symmetrically.Still adopt the Yin Mo of Cabot company, and after printing, be heated to and be lower than 150 degrees centigrade and keep and be cured in about 10 minutes.
Sample afterwards promptly can be with semiconductor solution printed semiconductor film subsequently by rinsing and drying.Print with pentacene solution by the short-term ink-jet, cover the groove district between source electrode and the drain electrode, and, form organic semiconductor layer 204 being lower than 150 degrees centigrade of heating 10 minutes.
, use the passivation dielectric film 206 of typography preparation (as HSQ ink-jet) preparation covering device, and in nitrogen protection atmosphere, carry out 200 degrees centigrade stove case quenching thereafter.
Embodiments of the invention 1 formed semiconductor transistor device can have 0.5cm
2The field-effect mobility of/V.s, and can realize I
On/ I
Off=1 * 10
3Conducting electric current and cut-off current ratio.It will be appreciated by those skilled in the art that, semiconductor transistor device of the present invention can satisfy the requirement of current opto-electronic device, transducer (comprising biology sensor), radio electronic label (RFID), backboard light source and various application such as backboard pixel, small-capacity memory fully, and has reduced production cost really and simplified technological process.
Embodiment 2: the printed semiconductor transistor of silicon materials matrix
Technology of the present invention still can be applied to the matrix of silicon materials, and the second embodiment of the present invention is promptly exemplarily set forth with silicon substrate and come the transistorized technology of printed semiconductor.
At first, silicon substrate is carried out cleaning surfaces, and use the splash coating process to plate the dielectric film layer at matrix surface.Then, type metal grid on silicon substrate.With Cabot silver China ink on silicon substrate, with the resolution of about 300dpi, less than the droplet size type metal grid of about 30pl.Gains are heated to are lower than 150 degrees centigrade and keep and be cured in about 10 minutes.
Afterwards, use HSQ printing ink on metal gates, print the grid dielectric film, and place the nitrogen protective gas with laser curing 7 minutes the dielectric film of formation.
Subsequently, printing source electrode and drain electrode.Can print the nano silicon particles slurry China ink that comprises boron and form N+ type polycrystalline/amorphous silicon, thereby form source electrode and drain electrode.Between source electrode and drain electrode, print the nano silicon particles slurry China ink that comprises phosphorus or arsenic and form P-type polycrystalline/amorphous silicon.Like this, promptly can make the N transistor npn npn.According to embodiments more of the present invention, the live width of formed source electrode and drain electrode can be at about 0.1 micron to about 500 microns.Certainly, the present invention is unrestricted in this regard.
Then, adopt the Yin Mo of Cabot company near source electrode and drain electrode, to print, form the Metal Contact body of source electrode and drain electrode, and in nitrogen protection atmosphere, carry out 200 degrees centigrade stove case quenching.
At last, can use the technology of laminating technology seal to prepare the passivation dielectric film of covering device.
Embodiment 3: all print formula semiconductor transistor that with the stainless steel is matrix
Especially, the method disclosed in the present can be applied to stainless steel base, and the third embodiment of the present invention is promptly exemplarily set forth with stainless steel base and come the transistorized technology of printed semiconductor.With reference to Fig. 3 and Fig. 4, Fig. 3 illustrates with the stainless steel profile of the semiconductor transistor that is matrix formation, and it is the exemplary method flowchart of the semiconductor transistor of matrix with the stainless steel that Fig. 4 illustrates formed according to the present invention.
At first, in step 401, anodization stainless steel base 301: in NaOH alkalescence electrolyte, make thickness and be 0.1～10 micron sull 302.Stainless steel base 301 occur easily with its on the films that will form do not match and cause the problem of delamination.In addition, also there is the problem of diffusion in the metal in the stainless steel base.Therefore, compare with polymeric matrix (for example PET or PC matrix), the operation of this surface treatment formation dielectric insulation film can obtain more benefit under the situation in stainless steel base.
Then, in step 402, type metal grid 303 on stainless steel base 301.With Cabot silver China ink on stainless steel base, with the resolution of about 300dpi, less than the droplet size type metal grid of about 30pl.Gains are heated to are lower than 150 degrees centigrade and keep and be cured in about 10 minutes.
Afterwards, use HSQ printing ink on metal gates, to print grid dielectric film 304 (step 403), and place the nitrogen protective gas with laser curing 7 minutes (step 404) dielectric film that forms.In high-temperature technology (high-temperature technology of being set forth for example), therefore the metal that exists in the stainless steel base (for example iron) may be diffused into the behaviour area (silicon area) of device and can impact device performance, covers with HSQ and annealing (step 405) back forms silicon dioxide under the situation that oxygen or nitrogen exist operation can prevent this diffusion.In other embodiments, can also cover with polysilazane, the annealing under the situation that nitrogen exists of described polysilazane forms silicon nitride.Perhaps, can cover with HSQ and polysilazane and form duplicature.
Subsequently, in step 406, printing source electrode and drain electrode 305.Can print the nano silicon particles slurry China ink that comprises phosphorus or arsenic and form P+ type polycrystalline/amorphous silicon, thereby form source electrode and drain electrode.Between source electrode and drain electrode, print the nano silicon particles slurry China ink that comprises boron and form N-type polycrystalline/amorphous silicon 306 (steps 407).Like this, promptly can make the P transistor npn npn.According to embodiments more of the present invention, the live width of formed source electrode and drain electrode can be at about 0.1 micron to about 500 microns.Certainly, the present invention is unrestricted in this regard.In this step,, therefore might carry out the hardening step of silicon China ink and metal wire in the temperature of height to 1000 degree centigrade because stainless steel base can tolerate 800 to 1000 degrees centigrade high temperature.
Similarly, for forming the N transistor npn npn, in this step, can print the nano silicon particles slurry China ink that comprises boron and form N+ type polycrystalline/amorphous silicon, thereby form source electrode and drain electrode; And between source electrode and drain electrode, print the nano silicon particles slurry China ink that comprises phosphorus or arsenic and form P-type polycrystalline/amorphous silicon.
Then,, adopt the Yin Mo of Cabot company near source electrode and drain electrode, to print, form the Metal Contact body 307 of source electrode and drain electrode, and in nitrogen protection atmosphere, carry out 300 degrees centigrade stove case quenching in step 408.
At last,, can print the epoxides macromolecule, with the passivation dielectric film 308 of preparation covering device in step 409.
Embodiments of the invention 3 formed semiconductor transistor devices can have 100cm
2The field-effect mobility of/V.s, and can realize I
On/ I
Off=1 * 10
6Conducting electric current and cut-off current ratio.
Use above-mentioned technology of the present invention, can need not current necessary expensive treatment equipment of silicon single crystal wafer factory (withstand high temperatures high pressure) and clean (must under vacuum, produce), reduced cost widely.Moreover the silicon substrate that stainless price compares is wanted considerably cheaper.Therefore, can reduce the manufacturing cost of semiconductor device and electronic circuit significantly as matrix with stainless steel.
In addition, device also faces another restriction on the silicon chip, promptly can't form semiconductor transistor on large-sized silicon chip.Silicon chip with monocrystalline silicon is an example, and the current upper limit that can realize is essentially 12 inches.Therefore, the current semiconductor transistor of having in batches make respectively on each silicon chip needs expensive picking up to put formula semiconductor chip treatment facility, makes more complicated, and efficient is not high yet.The technology for preparing semiconductor transistor with mode of printing on stainless steel base does not then have this size restrictions.Can use continuous Scroll printing equipment to realize making by the continuous printing in volume ground on the stainless steel base of oversize, this has improved production efficiency significantly and has broken through size of devices restriction on the silicon chip.Afterwards, formed device can be cut into slices or be otherwise individualized.In addition, because stainless steel base possesses flexibility, can be wound into circle and be convenient to dispose; The semiconductor device of manufacturing thereon also correspondingly has certain flexibility, thereby can adapt to flexible application.Moreover, because therefore the metal that is contained in the stainless steel can partly save technology and the cost that forms Metal Contact at least as the part metals contact in the semiconductor transistor.
In several exemplary, one or more in the operating procedure in each embodiment can be omitted.In addition, in some cases, features more of the present disclosure can be used and need not other features of corresponding use.In addition, one or more in above-mentioned embodiment and/or the variant can make up in whole or in part with one or more of other above-mentioned embodiments and/or variant.
Although described several exemplary above in detail, but those skilled in the art will recognize easily, to revise, change and/or substitute be possible to a lot of other in described exemplary, and can not depart from the instruction and the advantage of disclosure novelty substantially.Therefore, all such modifications, change and/or substitute are planned to be included in as in the scope of the present disclosure defined in the appended claims.In claims, device adds the phrase of function plans to cover the structure that is described to carry out the function of being quoted from herein, is not limited only to equivalent structures, also comprises equivalent configurations.
Claims (24)
1. method that forms semiconductor transistor comprises:
Print gates on matrix;
Printing grid dielectric film;
Printing source electrode and drain electrode;
The printed semiconductor film; And
Form the passivation dielectric film.
2. the method for claim 1, wherein said matrix includes organic polymer.
3. the method for claim 1, wherein said matrix is selected from the group of being made up of silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix.
4. method as claimed in claim 2, before also being included in the described grid of printing described matrix is carried out surface passivation to form hydrophilic or hydrophobic surface, perhaps use rotation or splash coating process to plate the dielectric film layer on the surface of described matrix and carry out maturation process.
5. method as claimed in claim 3, also be included in before the described grid of printing, in acidity, alkaline electrolyte or neutral solution, make sull, perhaps use rotation or splash coating process to plate the dielectric film layer on the surface of described matrix and carry out maturation process.
6. the method for claim 1, also be included in after the printing grid dielectric film, in gaseous environment, carry out the stove case and quench or laser quenching, to form gate oxide or grid nitride, perhaps gate oxide and grid nitride, the metal film of the described grid of sintering simultaneously.
7. the method for claim 1 also is included in after the printed semiconductor film, carries out the stove case and quench or laser quenching in gaseous environment.
8. the method for claim 1 also is included in after the formation passivation dielectric film, carries out the stove case and quench or laser quenching in gaseous environment.
9. as each described method among the claim 6-8, wherein, if described matrix is an organic polymer, then described stove case quenches and carries out at 100 degrees centigrade to 300 degrees centigrade; If described matrix is selected from the group of being made up of silicon materials matrix, stainless steel material matrix and metal semiconductor material matrix, then described stove case quenches and carries out at 100 degrees centigrade to 1000 degrees centigrade.
10. the method for claim 1 wherein adopts ink-jet printing process to carry out described multinomial printing operation.
11. method as claimed in claim 2, wherein said semiconductor film are pentacene and derivative thereof.
12. the method for claim 1, the operation that wherein forms the passivation dielectric film comprises ink jet printing passivation dielectric film.
13. the method for claim 1, the operation that wherein forms the passivation dielectric film comprises the slaking of printing macromolecule, and described macromolecule comprises epoxides, polyimides.
14. the method for claim 1, the operation that wherein forms the passivation dielectric film comprises the laminating technology seal.
15. method as claimed in claim 3 also is included in the printed semiconductor film and forms Metal Contact afterwards.
16. method as claimed in claim 3, the operation of wherein printing source electrode and drain electrode comprises that printing the nano silicon particles slurry China ink that comprises boron forms N+ type polycrystalline/amorphous silicon, and the operation of printed semiconductor film comprises that printing the nano silicon particles slurry China ink that comprises phosphorus or arsenic forms P-type polycrystalline/amorphous silicon, to make the N transistor npn npn.
17. method as claimed in claim 3, the operation of wherein printing source electrode and drain electrode comprises that printing the nano silicon particles slurry China ink that comprises phosphorus or arsenic forms P+ type polycrystalline/amorphous silicon, and the operation of printed semiconductor film comprises that printing the nano silicon particles slurry China ink that comprises boron forms N-type polycrystalline/amorphous silicon, to make the P transistor npn npn.
18. the method for claim 1 also is included in the described grid of printing and prints HSQ, polysilazane or its combination before on described matrix, forms silicon nitride to quench under nitrogen environment.
19. method as claimed in claim 18, the operation of wherein printing the grid dielectric film comprises printing HSQ, polysilazane or its combination, forms silicon nitride to quench under nitrogen environment.
20. method as claimed in claim 19, the operation that wherein forms the passivation dielectric film comprises printing HSQ, polysilazane or its combination, forms silicon nitride to quench under nitrogen environment.
21. a semiconductor transistor comprises:
Matrix;
The grid that on described matrix, prints;
The grid dielectric film that on described grid, prints;
Source electrode that on described matrix, prints and drain electrode;
Printed semiconductor film in described source electrode and drain electrode; And
The dielectric film of passivation.
22. semiconductor transistor as claimed in claim 21, wherein said matrix is a stainless steel.
23. semiconductor transistor as claimed in claim 21, wherein said matrix are selected from the group of being made up of silicon materials matrix, organic polymer matrix, stainless steel base and metal semiconductor material matrix.
24. as each described semiconductor transistor among the claim 21-23, wherein said multinomial printing is ink jet printing.
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