CN101799625A - Hyperbranched polyester micro-optical photoresist - Google Patents

Hyperbranched polyester micro-optical photoresist Download PDF

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CN101799625A
CN101799625A CN 200910214063 CN200910214063A CN101799625A CN 101799625 A CN101799625 A CN 101799625A CN 200910214063 CN200910214063 CN 200910214063 CN 200910214063 A CN200910214063 A CN 200910214063A CN 101799625 A CN101799625 A CN 101799625A
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photoresist
hyperbranched polyester
reaction
hyperbranched
micro
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CN101799625B (en
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冯宗财
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ZHANJIANG NORMAL UNIVERSITY
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ZHANJIANG NORMAL UNIVERSITY
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Abstract

The invention relates to a hyperbranched polyester micro-optical photoresist, comprising a hyperbranched alkali-soluble photopolymer, an active diluent, a cross-linking agent, a photoinitiator, an auxiliary agent and the like. The photosensitive property, the corrosion performance, the linear range and the like of the hyperbranched polyester micro-optical photoresist can be adjusted through the hyperbranched polymer structure, the functional group at the tail end of the hyperbranched polymer molecule and the formula of the photoresist. The photoresist has easy preparation and great physicochemical property adjustability, and can be developed with aqueous developer, thereby having little influence to the environment in use. In addition, the photoresist has high light sensitivity and image definition, great corrosion depth and unique linear corrosion performance, and is especially suitable for photoetching process of micro-optical elements.

Description

The hyperbranched polyester micro-optical photoresist
Technical field
The invention relates to the photoresist of micro optical element processing usefulness, particularly have good film-forming property, resolution is high and easy to control, the negative photoresist of etching repeatedly of wide linear photoetching scope, face shape is arranged.
Background technology
Photoresist is a difference of utilizing light reaction front and back solubleness, makes the meticulous functional material with transition diagram.Positive corrosion-resisting agent is fit to high-resolution occasion, as chip circuit etc.; Negative resist is fit to deep etching, as making of MEMS (micro electro mechanical system), micro optical element, CD master-disc, printed circuit board etc.Integrated multiple physics of MEMS (micro electro mechanical system) or Chemical Control means adopt the lithography process method of similar integrated circuit to make.Recently MEMS (micro electro mechanical system) enters application from research, as genetic chip, full optical switch, micromachine etc.The resist that MEMS (micro electro mechanical system) is used, resolution is not main points, deep etching and high breadth depth ratio performance are only important indicator, this class resist that uses in the world develops with organic solvent at present, and mechanical property is preferably arranged, can directly make micro-component with it, weak point is that this class resist etching depth after exposure, development is limited, makes figure to a lot of with the photoetching legal system, and the microfabrication on former ground is not too suitable.Micro optical element is with in light weight, and volume is little, and advantages such as flexible design obtain to develop rapidly, and representational micro optical element such as microlens array are the important primary elements of optical communication, photometry calculation, optical instrument etc.The making of microlens array has developed several different methods, as laser direct-writing, promptly directly processes with laser, and the lens quadric surface is to be made of a series of steps on microcosmic, therefore, is unsuitable for processing small-bore meticulous lenticule; Hot melt adhesive melt-processed method can produce the dead angle between lenticule; The gray scale mask method is that the special glass of employing transmitance Gradient distribution is mask, processes through steps such as exposure, developments with photoresist; Mobile mask method is the another kind of means of controlling the exposure energy, energy being distributed by quadric surface on the resist face.Between the etching depth that the two kinds of job operations in back all need resist and exposure energy corresponding linear response relationship is arranged, make the energy that distributes with the quafric curve form, after process exposure, development, be converted into the quadric surface structure of resist.But present resist is paid attention to sensitivity and contrast, even this linear response performance is arranged, its scope is also very narrow, can not make small-bore, the lenticule of higher curvature.The photoresist of high breadth depth ratio performance is its critical material.
At present, the micro-electro-mechanical systems matrix resin that micro optical element makes employed resist of unifying is mainly line style or low branched polymer, the linear polymers characteristics of molecular structure, be that big molecule has only the chain entanglement between two end of the chains and the chain, the influence of terminated radical reduces with the increase of molecular weight, chain entanglement has been given the toughness of macromolecular material to a certain extent, creep, impact resilience, rheological characteristics, the chain entanglement of linear polymers molecule will cause the etching section of photoresist in developing process irregular, can cause face shape control difficulty in the processing of high relief micro optical element continuously.The strand of dissaving polymer has a large amount of branch points and chain end, the chain end group is very big to macromolecular influence, is difficult to mutual entanglement between the big molecule, after molecular weight surpasses certain value, viscosity is little than linear macromolecule, and is little with the increase variation of molecular weight.At present dissaving polymer is applied at the aspects such as constitution controller of the modifier of coating, bonding agent, auxiliary rheological agents, linear polymer, crystal nucleating agent, organic and inorganic alloy.
Summary of the invention
The objective of the invention is to remedy the deficiency that prior art exists, a kind of hyperbranched polyester micro-optical photoresist is provided, this photoresist has good film-forming property, resolution height, has wide linear photoetching scope, micro optical element to add man-hour, and face shape is easy to control, and performance such as etching repeatedly.
For achieving the above object, the technical scheme that the present invention takes is that this hyperbranched polyester micro-optical photoresist is made up of following raw materials by weight percent: hyperbranched alkali solubility photopolymer: 60.0%~85.0%; Reactive diluent: 5.0%~15.0%; Crosslinking chemical: 5.0%~15.0%; Light trigger: 1.0%~10.0%; The modest 466:0.1% of moral~1.0%.
Its photosensitive property of hyperbranched polyester micro-optical photoresist, etching performance, the range of linearity etc. can be regulated by the functional group and the resist prescription of dissaving polymer structure, hyperbranched polymer molecule end.
Described hyperbranched alkali solubility photopolymer is synthetic by the method for dispersing, its concrete synthetic method is as follows: with polyvalent alcohol or monose is nuclei originis, utilize the hydroxyl and the anhydride reaction of polyvalent alcohol or monose, utilize reaction carboxyl that generates and the epoxy compound reaction that contains an epoxy radicals again, the hydroxyl that this reaction generates again with anhydride reaction, chain extension is to the molecular weight that needs so repeatedly, the final step of chain extending reaction should be and anhydride reaction, make synthetic hyperbranched polymer molecule periphery contain a large amount of carboxyls, utilize the epoxy reaction of the compound that contains epoxy radicals and two keys in carboxyl and the molecule, as with the epoxy reaction synthesis of super branched alkali solubility photopolymer of glycidyl methacrylate or allyl glycidyl ether.In the course of reaction,, add different acid anhydrides and the chain extension number of times of functionality, the degree of branching and the molecular weight of control synthetic polymer by using different nuclei originises.
Described polyvalent alcohol comprises ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene-glycol, various molecular weight polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, trimethylolpropane, glycerine, inositol, and monose comprises glucose, mannose, galactose, fructose, arabinose, wood sugar, ribose, ribodesose.
Described acid anhydrides comprises phthalic anhydride, trimellitic anhydride, succinic anhydride, maleic acid anhydride and the acid anhydrides with following structure:
Figure G2009102140636D00031
B is chain or ring texture
The described epoxy compound finger ring oxidative ethane that contains an epoxy radicals, epoxypropane, epichlorokydrin, epoxy propane butyl ether etc., and compound with following structure:
A: be methyl, ethyl and substituting group thereof, chain or ring texture group
Described hyperbranched alkali solubility photopolymer: with the polystyrene is standard, adopt gel osmoticing chromatogram analysis, its molecular weight is between 500~5000g/mol, molecule chain end contains carboxyl, hydroxyl, methacryloxy, acryloxy, or vinyl, allyl ether etc., 〉=16 of end group number sum totals, wherein the carboxyl number is no less than 1/3 of end group number sum total.
Described reactive diluent comprises the acrylate, methacrylate, acrylic acid, methacrylic acid, vinyl acetate, vinyl ether of simple function group etc., allyl glycidyl ether, 2-phenoxyethyl acrylate, ethoxy ethoxy ethyl propylene acid esters, ring trimethylolpropane dimethoxym ethane acrylate, stearyl alcohol acrylate, stearyl alcohol methacrylate, stearyl alcohol/cetanol methacrylate.
Described crosslinking chemical comprises difunctionality and trifunctional acrylate etc., as tripropylene glycol diacrylate, 1, the 6-hexanediyl ester, ethoxyquin 1, the 6-hexanediyl ester, third oxidation 1, the 6-hexanediyl ester, propylene glycol diacrylate, the ethoxyquin propylene glycol diacrylate, the Macrogol 200 diacrylate, 1, the 4-butanediol diacrylate, neopentylglycol diacrylate, the third oxidation neopentylglycol diacrylate, the PEG400 diacrylate, the Macrogol 600 diacrylate, trimethylolpropane triacrylate, trimethylol-propane trimethacrylate, the third oxidation trimethylolpropane triacrylate, the ethoxyquin trimethylolpropane triacrylate, the glycerol propoxylate triacrylate, the ethoxyquin glycerol tri-acrylate.
Described light trigger is a photoproduction free radical type initiating agent, as photosensitizer 651, photosensitizer 184, photosensitizer 1800, photosensitizer 907, photosensitizer 261, photosensitizer 149, photosensitizer 1173 etc.
The hyperbranched polyester micro-optical photoresist in use, but photoresist surface coated one deck of oven dry film forming is by mass percent: 20%~40% styrene, 20%~50% acrylic or methacrylic acid, 5%~20% acrylate or methacrylate, 1%~6% initiating agent and 10%~40% solvent carry out acryl resin and the dissaving polymer that free radical polymerization obtains, moral modest 466, butanols, dimethylbenzene is by mass percentage: 20%~60% acryl resin, 5%~40% dissaving polymer, 0.1%~1% moral modest 466,10%~20% butanols, 10%~20% dimethylbenzene mixes the film that forms, and this film thickness should<3 μ m.The fundamental purpose of this film is the friction force that reduces between resist film and the mask.The purpose that adds dissaving polymer is the adhesion that increases between photoresist and the surface coating.Little as the friction between resist film and the mask, mask easily moves can not use this coating.
Described developer by water, Tetramethylammonium hydroxide or sodium carbonate in mass ratio: Tetramethylammonium hydroxide or sodium carbonate: water=0.5%~3%: ratio was formulated in 99.5%: 97%.
Advantage of the present invention:
The present invention proposes to prepare photoresist with dissaving polymer, because of its a large amount of end group and intrinsic high activity, low viscosity, unique three-dimensional spherical molecular conformation, will open up the new way of resist design.High resolving power occasion at tens nanometer, as the next generation computer chip, the exposure and the molecular entanglement of exposure regional boundary face not, to make the etching section produce defective, the three-dimensional spherical molecular conformation of dissaving polymer uniqueness and strand do not tangle, and can make the etching image section of the resist that is prepared by dissaving polymer more clear.To the resist of micrometer structure yardstick, as MEMS (micro electro mechanical system), micro-optic, the dissaving polymer resist has higher photolytic activity, etching speed and etching depth, and the structure distortion of preparation is little, and the face type is controlled well.
Resist preparation of the present invention is easy, the physicochemical property adjustability is big, and available water developer develops, thereby little to environmental impact in using, while resist light sensitivity, image definition height, etching depth is big, and unique linear etching performance is arranged, and especially is fit to the lithography process of micro optical element.
Description of drawings
Fig. 1 is that the present invention disperses the synthetic dissaving polymer infrared spectrogram of method;
Fig. 2 is that the present invention disperses the synthetic dissaving polymer thermal analysis curue of method;
Fig. 3 is the low string diagram of resolution that micro-optic photoresist of the present invention develops and forms through contact exposure;
Fig. 4 is the high string diagram of resolution that micro-optic photoresist of the present invention develops and forms through contact exposure;
Fig. 5 is the microlens array step instrument analysis result figure that micro-optic photoresist of the present invention forms through moving exposure;
Fig. 6 is 200 μ m * 200 μ m lenticule resist element computer fittings figure as a result.
Embodiment
One, the synthetic embodiment of hyperbranched alkali solubility photopolymer:
Hyperbranched alkali solubility photopolymer is synthetic: principles of formulation design: oh group and anhydride group reaction with same mole, carboxylic group and cycloalkyl groups reaction with same mole, the amount that adds glycidyl methacrylate or allyl glycidyl ether after chain extension is finished should make the theoretical carboxyl number reaction of hyperbranched polymer molecule periphery be no more than 1/2.
Embodiment 1:
Raw material and proportioning:
Inositol 9~30g
Succinic anhydride 30~300g
Tetrabutyl ammonium bromide 0.06~0.56g
N, dinethylformamide 17~167g
Preparation technology:
With inositol, succinic anhydride, tetrabutyl ammonium bromide, N; dinethylformamide adds in the four-hole bottle; under the nitrogen protection; be warming up to 110 ± 5 ℃; insulation reaction to acid number constant after, add 27.76~277.56g epichlorokydrin, 110 ± 5 ℃ are reacted constant to acid number; add 57.6~576g trimellitic anhydride again, 110 ± 5 ℃ are reacted constant to acid number.Add 55.51~555.12g epichlorokydrin, 110 ± 5 ℃ are reacted constant to acid number, add 115.2~1152g trimellitic anhydride again, 110 ± 5 ℃ are reacted constant to acid number, add 51.12~511.2g glycidyl methacrylate, 90 ± 5 ℃ and react to acid number is constant and obtain hyperbranched alkali solubility photopolymer.The The results of FT-IR of figure one shows no acid anhydrides 1760cm -1, 1850cm -1With epoxy radicals 905cm -1Vibration absorption peak illustrates that trimellitic anhydride, succinic anhydride, epichlorokydrin, glycidyl methacrylate all react completely.And 791em -1And 1617cm -1It is fairly obvious to locate allylic absorption peak, illustrates that allyl receives on the hyperbranched polymer molecule.Figure two hot analysis results show, resin does not have weightlessness at 100 ℃ with interior, and is weightless less in 100~200 ℃ of scopes, and since 200 ℃ particularly at 300~400 ℃ of thermal weight loss especially severes.According to hot analysis result, resin 300 ℃ less with interior thermal weight loss, basic do not decompose, have thermal stability preferably.
Embodiment 2:
Raw material and proportioning:
Ethylene glycol 6.2~62.0g
Trimellitic anhydride 38.4~384g
Tetrabutyl ammonium bromide 0.113~0.892g
N, dinethylformamide 17~167g
Preparation technology:
With ethylene glycol, trimellitic anhydride, tetrabutyl ammonium bromide, N; dinethylformamide adds in the four-hole bottle; under the nitrogen protection; be warming up to 110 ± 5 ℃; insulation reaction to acid number constant after, add 37.01~370.1g epichlorokydrin, 110 ± 5 ℃ are reacted constant to acid number; add 40~400g succinic anhydride again, 110 ± 5 ℃ are reacted constant to acid number.Add 37.01~370.1g epichlorokydrin, 110 ± 5 ℃ are reacted constant to acid number, add 76.8~768g trimellitic anhydride again, 110 ± 5 ℃ are reacted constant to acid number, add 74.01~740.2g epichlorokydrin, 110 ± 5 ℃ are reacted constant to acid number, add 153.6~1536g trimellitic anhydride, and 110 ± 5 ℃ are reacted constant to acid number.Add 68.16~6816g glycidyl methacrylate, 90 ± 5 ℃ are reacted to acid number is constant and obtain hyperbranched alkali solubility photopolymer.Structural characterization meets the requirements.
Two, the preparation embodiment of hyperbranched polyester micro-optical photoresist:
The mass percent of raw material and proportioning:
Hyperbranched alkali solubility photopolymer 60.0~85.0%
Trimethylolpropane triacrylate 5.0~15.0%
Methacrylic acid 5.0~15.0%
Photosensitizer 65 11.0~10.0%
Moral modest 466 0.1~1.0%
Preparation technology:
With photosensitizer 651, methacrylic acid, trimethylolpropane triacrylate be mixed and heated to 40~50 ℃ make photosensitizer 651 dissolving after, add hyperbranched alkali solubility photopolymer, moral modest 466 and mix, filter packing with the filtration unit of<5 μ m.Table one is the different all thickness and the skin hardnesses thereof of glue speed.
Table one different all the photoresist thickness and the skin hardnesses thereof of glue speed
Equal glue rotating speed Resist thickness (μ m) The surface pencil hardness
2000 rev/mins, 10 seconds ??65~85 ??B
3000 rev/mins, 10 seconds ??35~45 ??HB
4000 rev/mins, 10 seconds ??25~35 ??H
5000 rev/mins, 10 seconds ??20~25 ??H
Three, the preparation embodiment of photoresist surface coating:
(1) acryl resin is synthetic:
The mass percent of raw material and proportioning:
Styrene 25%~40%
Acrylic acid 20.0~50.0%
Benzoyl peroxide 1.0~6.0%
Butanols 10.0%~20.0%
Dimethylbenzene 10.0%~20.0%
Preparation technology:
Styrene, acrylic acid, benzoyl peroxide mixed dissolution is standby; in four-hole bottle, add butanols and dimethylbenzene; be warming up to 80 ℃; under the situation of logical ammonia; with 2~3 hours drip styrenes, acrylic acid and benzoyl peroxide mixed liquors, after dripping, 80 ℃ of insulations 1 hour; 100 ℃ are incubated 1 hour, are cooled to<40 ℃ of dischargings.
(2) preparation of surface coating:
The mass percent of raw material and proportioning:
Acryl resin 20.0%~60.0%
Dissaving polymer 5.0%~40.0%
Moral modest 466 0.1%~1.0%
Butanols 10.0%~20.0%
Dimethylbenzene 10.0%~20.0%
Preparation technology:
After acryl resin and dissaving polymer mixed, drip under agitation that moral is modest 466, the mixed liquor of butanols, dimethylbenzene, after mixing, filter packing with the filtration unit of<1 μ m.
(3) use of photoresist surface coating:
On the hyperbranched polyester micro-optical photoresist dry film of having dried, drip an amount of surface coating liquid, elder generation's low speed is distributed on the photoresist dry film it, after the film forming, can use in 50 minutes through 80~90 ℃ of bakings under more than or equal to 5000 rev/mins equal glue speed then.Whether surface coating uses can be decided according to the size of the friction between mask and the photoresist dry film, if the friction between mask and the photoresist dry film is little, then can not use surface coating.

Claims (10)

1. hyperbranched polyester micro-optical photoresist, form by the raw material of following mass percent:
Hyperbranched alkali solubility photopolymer: 60.0%~85.0%,
Reactive diluent: 5.0%~15.0%,
Crosslinking chemical: 5.0%~15.0%,
Light trigger: 1.0%~10.0%,
The modest 466:0.1% of moral~1.0%.
Its photosensitive property of hyperbranched polyester micro-optical photoresist, etching performance, the range of linearity etc. can be passed through the dissaving polymer structure, and the functional group of hyperbranched polymer molecule end and resist prescription are regulated.
2. according to the described hyperbranched polyester micro-optical photoresist of claim 1, it is characterized in that: described hyperbranched alkali solubility photopolymer is synthetic by the method for dispersing, its concrete synthetic method is as follows: with polyvalent alcohol or monose is nuclei originis, utilize the hydroxyl and the anhydride reaction of polyvalent alcohol or monose, utilize reaction carboxyl that generates and the epoxy compound reaction that contains an epoxy radicals again, the hydroxyl that this reaction generates again with anhydride reaction, chain extension is to the molecular weight that needs so repeatedly, the final step of chain extending reaction should be and anhydride reaction, make synthetic hyperbranched polymer molecule periphery contain a large amount of carboxyls, utilize the epoxy reaction of the compound that contains epoxy radicals and two keys in carboxyl and the molecule, as with the epoxy reaction synthesis of super branched alkali solubility photopolymer of glycidyl methacrylate or allyl glycidyl ether.In the course of reaction,, add different acid anhydrides and the chain extension number of times of functionality, the degree of branching and the molecular weight of control synthetic polymer by using different nuclei originises.
3. according to the described hyperbranched polyester micro-optical photoresist of claim 2, it is characterized in that: described polyvalent alcohol comprises ethylene glycol, diethylene glycol, triethylene glycol, tetraethylene-glycol, various molecular weight polyethylene glycol, propylene glycol, dipropylene glycol, tripropylene glycol, trimethylolpropane, glycerine, inositol; Monose comprises glucose, mannose, galactose, fructose, arabinose, wood sugar, ribose, ribodesose.
4. according to the described hyperbranched polyester micro-optical photoresist of claim 2, it is characterized in that: described acid anhydrides comprises phthalic anhydride, trimellitic anhydride, succinic anhydride, maleic acid anhydride and the acid anhydrides with following structure:
Figure F2009102140636C00021
B is chain or ring texture
5. according to the described hyperbranched polyester micro-optical photoresist of claim 2, it is characterized in that: the described epoxy compound finger ring oxidative ethane that contains an epoxy radicals, epoxypropane, epichlorokydrin, epoxy propane butyl ether etc., and compound with following structure:
Figure F2009102140636C00022
Be methyl, ethyl and substituting group thereof, chain or ring texture group
6. according to claim 1 or 2 described hyperbranched polyester micro-optical photoresists, it is characterized in that: described hyperbranched alkali solubility photopolymer: with the polystyrene is standard, the employing gel infiltration is analyzed, its molecular weight is between 500~5000g/mol, molecule chain end contains carboxyl, hydroxyl, methacryloxy, acryloxy, or vinyl, allyl ether etc., 〉=16 of end group number sum totals wherein carboxyl number are no less than 1/3 of end group number sum total.
7. according to the described hyperbranched polyester micro-optical photoresist of claim 1, it is characterized in that: described reactive diluent, the acrylate that comprises simple function group, methacrylate, acrylic acid, methacrylic acid, vinyl acetate, vinyl ether etc., allyl glycidyl ether, 2-phenoxyethyl acrylate, ethoxy ethoxy ethyl propylene acid esters, ring trimethylolpropane dimethoxym ethane acrylate, stearyl alcohol acrylate, stearyl alcohol methacrylate, stearyl alcohol/cetanol methacrylate;
Described crosslinking chemical comprises difunctionality and trifunctional acrylate etc., as tripropylene glycol diacrylate, 1, the 6-hexanediyl ester, ethoxyquin 1, the 6-hexanediyl ester, third oxidation 1, the 6-hexanediyl ester, propylene glycol diacrylate, the ethoxyquin propylene glycol diacrylate, the Macrogol 200 diacrylate, 1, the 4-butanediol diacrylate, neopentylglycol diacrylate, the third oxidation neopentylglycol diacrylate, the PEG400 diacrylate, the Macrogol 600 diacrylate, trimethylolpropane triacrylate, trimethylol-propane trimethacrylate, the third oxidation trimethylolpropane triacrylate, the ethoxyquin trimethylolpropane triacrylate, the glycerol propoxylate triacrylate, the ethoxyquin glycerol tri-acrylate.
8. according to the described hyperbranched polyester micro-optical photoresist of claim 1, it is characterized in that: described light trigger is a photoproduction free radical type initiating agent.
9. according to the described hyperbranched polyester micro-optical photoresist of claim 1, it is characterized in that: but photoresist surface coated one deck of oven dry film forming is by mass percent: 20%~40% styrene, 20%~50% acrylic or methacrylic acid, 5%~20% acrylate or methacrylate, 1%~6% initiating agent and 10%~40% solvent carry out acryl resin and the dissaving polymer that free radical polymerization obtains, moral modest 466, butanols, dimethylbenzene is by mass percentage: 20%~60% acryl resin, 5%~40% dissaving polymer, 0.1%~1% moral modest 466,10%~20% butanols, 10%~20% dimethylbenzene mixes the film that forms, and this film thickness should<3 μ m.
10. according to the described hyperbranched polyester micro-optical photoresist of claim 9, it is characterized in that: described developer by water, Tetramethylammonium hydroxide or sodium carbonate in mass ratio: Tetramethylammonium hydroxide or sodium carbonate: water=0.5%~3%: ratio was formulated in 99.5%: 97%.
CN 200910214063 2009-12-18 2009-12-18 Hyperbranched polyester micro-optical photoresist Expired - Fee Related CN101799625B (en)

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WO2018196319A1 (en) * 2017-04-27 2018-11-01 苏州大学 Carbon nano-dot photoresist with fluorescent effect, and imaging method thereof
CN110850678A (en) * 2018-08-20 2020-02-28 日立化成株式会社 Photosensitive compound, method for producing same, photosensitive compound composition, and cured product thereof
CN110922570A (en) * 2019-12-05 2020-03-27 中国林业科学研究院林产化学工业研究所 Bio-based hyperbranched polyester plasticizer prepared by one-step method and application thereof in PVC cable material
CN114835889A (en) * 2022-05-13 2022-08-02 深圳市百利合新材料发展有限公司 Hyperbranched polymer molecular structure, preparation method and photoresist based on hyperbranched polymer
CN116444354A (en) * 2022-01-07 2023-07-18 中日合成化学股份有限公司 Multi-branched surfactant and preparation method thereof

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CN101024683A (en) * 2006-02-20 2007-08-29 四川大学 Reactable resin and optical-imaging composition

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018196319A1 (en) * 2017-04-27 2018-11-01 苏州大学 Carbon nano-dot photoresist with fluorescent effect, and imaging method thereof
CN110850678A (en) * 2018-08-20 2020-02-28 日立化成株式会社 Photosensitive compound, method for producing same, photosensitive compound composition, and cured product thereof
CN110850678B (en) * 2018-08-20 2024-03-15 株式会社力森诺科 Photosensitive compound, preparation method thereof, photosensitive compound composition and cured product thereof
CN110922570A (en) * 2019-12-05 2020-03-27 中国林业科学研究院林产化学工业研究所 Bio-based hyperbranched polyester plasticizer prepared by one-step method and application thereof in PVC cable material
CN110922570B (en) * 2019-12-05 2021-08-13 中国林业科学研究院林产化学工业研究所 Bio-based hyperbranched polyester plasticizer prepared by one-step method and application thereof in PVC cable material
CN116444354A (en) * 2022-01-07 2023-07-18 中日合成化学股份有限公司 Multi-branched surfactant and preparation method thereof
CN114835889A (en) * 2022-05-13 2022-08-02 深圳市百利合新材料发展有限公司 Hyperbranched polymer molecular structure, preparation method and photoresist based on hyperbranched polymer

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