CN101777561B - 分栅型非易失性存储器及其制造方法 - Google Patents
分栅型非易失性存储器及其制造方法 Download PDFInfo
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- CN101777561B CN101777561B CN201010022707.4A CN201010022707A CN101777561B CN 101777561 B CN101777561 B CN 101777561B CN 201010022707 A CN201010022707 A CN 201010022707A CN 101777561 B CN101777561 B CN 101777561B
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 81
- 239000004065 semiconductor Substances 0.000 claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000007667 floating Methods 0.000 claims abstract description 37
- 239000010410 layer Substances 0.000 claims description 144
- 238000005530 etching Methods 0.000 claims description 40
- 238000010276 construction Methods 0.000 claims description 38
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- 238000000926 separation method Methods 0.000 claims description 34
- 125000006850 spacer group Chemical group 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 26
- 230000004888 barrier function Effects 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000012535 impurity Substances 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- -1 boron ion Chemical class 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
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- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
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- 229910015900 BF3 Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
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- 230000003467 diminishing effect Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
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CN201010022707.4A CN101777561B (zh) | 2010-01-12 | 2010-01-12 | 分栅型非易失性存储器及其制造方法 |
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CN201010022707.4A CN101777561B (zh) | 2010-01-12 | 2010-01-12 | 分栅型非易失性存储器及其制造方法 |
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CN101777561A CN101777561A (zh) | 2010-07-14 |
CN101777561B true CN101777561B (zh) | 2013-05-01 |
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CN102315252B (zh) * | 2011-09-28 | 2017-03-29 | 上海华虹宏力半导体制造有限公司 | 共享源线的闪存单元及其形成方法 |
CN103367130A (zh) * | 2012-03-26 | 2013-10-23 | 上海宏力半导体制造有限公司 | 一种对堆叠多晶硅刻蚀轮廓进行控制的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851881A (en) * | 1997-10-06 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making monos flash memory for multi-level logic |
CN1574366A (zh) * | 2003-05-20 | 2005-02-02 | 夏普株式会社 | 半导体存储器件、半导体器件及其制造方法 |
CN1835210A (zh) * | 2004-10-08 | 2006-09-20 | 硅存储技术公司 | Nrom器件及其制造方法 |
CN101447489A (zh) * | 2008-12-30 | 2009-06-03 | 上海宏力半导体制造有限公司 | 半导体存储器件 |
CN101512772A (zh) * | 2005-01-14 | 2009-08-19 | 纳诺斯塔公司 | 用于存储多数据的非易失电可变存储器单元及其制造方法 |
-
2010
- 2010-01-12 CN CN201010022707.4A patent/CN101777561B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5851881A (en) * | 1997-10-06 | 1998-12-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making monos flash memory for multi-level logic |
CN1574366A (zh) * | 2003-05-20 | 2005-02-02 | 夏普株式会社 | 半导体存储器件、半导体器件及其制造方法 |
CN1835210A (zh) * | 2004-10-08 | 2006-09-20 | 硅存储技术公司 | Nrom器件及其制造方法 |
CN101512772A (zh) * | 2005-01-14 | 2009-08-19 | 纳诺斯塔公司 | 用于存储多数据的非易失电可变存储器单元及其制造方法 |
CN101447489A (zh) * | 2008-12-30 | 2009-06-03 | 上海宏力半导体制造有限公司 | 半导体存储器件 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140514 |
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Effective date of registration: 20140514 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Zhangjiang hi tech Park No. 818 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |