CN101777375A - Method for matching induction amplifier - Google Patents
Method for matching induction amplifier Download PDFInfo
- Publication number
- CN101777375A CN101777375A CN201010121420A CN201010121420A CN101777375A CN 101777375 A CN101777375 A CN 101777375A CN 201010121420 A CN201010121420 A CN 201010121420A CN 201010121420 A CN201010121420 A CN 201010121420A CN 101777375 A CN101777375 A CN 101777375A
- Authority
- CN
- China
- Prior art keywords
- induction amplifier
- matching
- induced voltage
- electric current
- matching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a method for matching an induction amplifier, comprising the following steps: inputting a first current and a second current; detecting induction voltage of the induction amplifier; and regulating the matching coefficient of the induction amplifier according to the induction voltage. By adopting the method for matching the induction amplifier, the matching coefficient of the induction amplifier can be regulated according to the induction voltage generated by the input currents, and the effect of obtaining the best matching state of the induction amplifier can be achieved.
Description
Technical field
The present invention relates to the induction amplifier field, relate in particular to a kind of matching process of induction amplifier.
Background technology
Induction amplifier often uses in semiconductor memory, as is used for the bit line current and the difference of reference current on the detection of stored unit (me morycell), thus judgement cell stores " 0 " or " 1 " bit.As shown in Figure 1, traditional induction amplifier mainly comprises metal-oxide-semiconductor M2, M3, M5 and M6.Wherein, M3 and storage unit M4 are complementary, and M4 can be gone up output current I
CellThe output current of mirror to the M3, i.e. I
Cell=I
M3M2 and storage unit M1 are complementary, and M1 can be gone up output current I
CellThe output current of mirror to the M2, i.e. I
Ref=I
M2M5 and storage unit M6 are complementary, i.e. I
M5=I
M6When induction amplifier is used for test storage unit M4 storage bit for " 0 " or " 1 ", because I
Cell=I
M3, I
Ref=I
M2, I
M5=I
M6, I again
M2=I
M5If storage unit M4 is " 0 " bit, then I
Cell＜I
Ref, the source class voltage of M6 is low level, i.e. buffer buffer output Dout is " 0 "; If storage unit M4 unit M4 is " 1 " bit, then I
Cell＞I
Ref, the source class voltage of M 6 is high level, i.e. buffer buffer output Dout is " 1 ".Above-mentioned induction amplifier be with the situation of storage unit perfect match under, judge cell stores " 0 " or " 1 " bit according to the output of buffer.But the actual sensed amplifier can not be accomplished perfect match with storage unit, as between M1 and M2, M3 and M4, M5 and the M6 because manufacturing process etc. is difficult to accomplish perfect match.If induction amplifier and storage unit do not match (M1 and M2, M3 and M4), and own circuit inside (M5 and M6) does not match, the judgement information of buffer output error when causing actual detected cell stores " 0 " or " 1 " bit, the defective of erroneous judgement occurs.During the induction amplifier real work, the matching factor of the common initial setting induction amplifier of prior art constitutes M2 as a plurality of metal-oxide-semiconductors of parallel connection, controls the number that constitutes metal-oxide-semiconductor by electric fuse or storage unit, thereby the matching factor of induction amplifier is set.Traditional method just simply preestablishes matching factor, because M1 and M2, M3 and M4, M5 and M6 still can not accomplish to mate fully, thereby the defective that still can occur judging by accident during detection.
Summary of the invention
The object of the present invention is to provide a kind of induction amplifier that makes to reach the matching process of optimum matching state.
The invention provides a kind of matching process of induction amplifier, comprise step: import first electric current and second electric current; Detect the induced voltage of induction amplifier; Regulate the matching factor of induction amplifier according to induced voltage.
As the further improvement of above-mentioned induction amplifier matching process, matching process also comprises step: the initial value that the matching factor of induction amplifier is set.
Adopt the matching process of induction amplifier of the present invention, the induced voltage that produces by the foundation input current is regulated the matching factor of induction amplifier, makes induction amplifier reach best matching state.
Description of drawings
Fig. 1 is the structural representation of prior art induction amplifier.
Fig. 2 is a kind of process flow diagram of regulating induction amplifier matching factor method in the specific embodiment of the invention.
Fig. 3 is an another kind of process flow diagram of regulating induction amplifier matching factor method in the specific embodiment of the invention.
Embodiment
Owing to can not accomplish that well coupling causes the detection of stored unit defective of erroneous judgement to occur, the invention provides a kind of matching process that strengthens induction amplifier at above-mentioned induction amplifier, this matching process can self-adaptation be adjusted the matching factor of induction amplifier.
The idiographic flow that the present invention strengthens the induction amplifier matching process as shown in Figure 2.When induction amplifier is started working, at first carry out fuse and handle the matching factor X (step S101) that induction amplifier is set, wherein the span of X is 0.4～1.6.Then import first electric current and second electric current (step S103), when being applied to detection of stored device stored unit storage " 0 " or " 1 " bit as this induction amplifier, then first electric current is the output current I of storage unit
Cell, second electric current is reference current I
Ref, this I
CellAnd I
RefCan produce or produce by current source circuit independently by the storage array (memory array) of memory inside, and I
Cell=I
RefThen detect the induced voltage Dout (step S015) of induction amplifier.If induced voltage Dout is " 1 ", the matching factor X that shows induction amplifier is less than normal, then needing increases an increment b (step S117) to matching factor, and wherein the span of b is 0.01～0.1, gives increment b of matching factor X thereby can pass through again fuse.After increasing increment, detect the size (step S119) of induced voltage Dout, if Dout still is " 1 ", then need continue to increase the matching factor value, just export until induced voltage and to become " 0 ", just stop to regulate the matching factor X of induction amplifier, show that the induction amplifier coupling has reached best.When Dout just was " 0 ", increased or reduce matching factor X all can make X by " 1 " change " 0 " or by " 0 " change " 1 " this moment.Because input current I
Cell=I
RefDout should be " 0 " under the desirable digital state, and the present invention is then behind the initial value of setting matching factor, by continuous adjusting matching factor, make matching factor reach a critical conditions, make that increasing or reduce the matching factor value all can change induced voltage.Thereby give compensation of initial value of matching factor, make induction amplifier reach the ideal matching state.In like manner, if induced voltage Dout is " 0 ", the matching factor that shows induction amplifier is bigger than normal, then need give the less increment b of matching factor (step S107), behind the minimizing increment b, detect the size (step S109) of induced voltage Dout, as if Dout still is " 0 ", then need continue to reduce the matching factor value, just exports until induced voltage to become " 1 ", just stop to regulate the matching factor X of induction amplifier, show that the induction amplifier coupling has reached best.
If above-mentioned induction amplifier is modulated to the optimum matching state, promptly increasing or reduce matching factor X all can cause induced voltage Dout output to change, at this moment, if the electric current I cell to be measured of the storage unit of input is not equal to reference current Iref, induction amplifier can very sensitive judging, thereby reduce the defective that occurs erroneous judgement when detecting.
As shown in Figure 3, the present invention the initial value of the matching factor of induction amplifier is set also can be after input first electric current and second electric current.Because core design thought of the present invention is to regulate matching factor to make induction amplifier reach critical conditions to be the optimum matching state, to make the induction amplifier of this moment have the sensitivity of height.Fuse processing did not then need to be provided with its initial value when induction amplifier was as if production certainly, directly regulated matching factor according to induced voltage and got final product.
Simultaneously, the inventor further points out, first electric current of input equates with second electric current, is in order better to demonstrate the effect when being adjusted to critical conditions.When first electric current and second electric current were unequal, when the accurate difference known between first electric current and second electric current, the matching factor of adjusting induction amplifier that still can be suitable made induction amplifier reach preferable matching status.Thereby, the electric current of induction amplifier input of the present invention, should not only limit to both must equate.And induction amplifier measuring semiconductor store memory storage unit of the present invention is as specific embodiment, but induction amplifier should not only limit to be applied to semiconductor memory.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the matching process of an induction amplifier is characterized in that, comprises step:
A, input first electric current and second electric current;
B, detection induced voltage;
C, the described induced voltage of foundation are regulated the matching factor of described induction amplifier.
2. matching process as claimed in claim 1 is characterized in that, step c specifically comprises step:
If described induced voltage is " 1 ", regulates described matching factor and be " 0 " until described induced voltage;
If described induced voltage is " 0 ", regulates described matching factor and be " 1 " until described induced voltage.
3. matching process as claimed in claim 1 is characterized in that, also comprises step before the step a: the initial value that the matching factor of described induction amplifier is set.
4. matching process as claimed in claim 3 is characterized in that, also comprises step before the step b: the initial value that the matching factor of described induction amplifier is set.
5. as claim 3 or 4 described matching process, it is characterized in that the span of described initial value is 0.4 to 1.6.
6. matching process as claimed in claim 5 is characterized in that, step c specifically comprises step:
If described induced voltage is " 1 ", described initial value sigma-delta is " 0 " until described induced voltage;
If described induced voltage is " 0 ", it is " 1 " until described induced voltage that described initial value reduces increment.
7. matching process as claimed in claim 6 is characterized in that, the span of described increment is 0.01 to 0.1.
8. matching process as claimed in claim 1 is characterized in that, described first electric current equals second electric current.
9. as claim 1 or 8 described matching process, it is characterized in that described first electric current and second electric current are produced by current source circuit.
10. as claim 1 or 8 described matching process, it is characterized in that described induction amplifier is applied to comprise the storer of storage array, described first electric current and second electric current are produced by storage array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010121420 CN101777375B (en) | 2010-03-10 | 2010-03-10 | Method for matching induction amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010121420 CN101777375B (en) | 2010-03-10 | 2010-03-10 | Method for matching induction amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101777375A true CN101777375A (en) | 2010-07-14 |
| CN101777375B CN101777375B (en) | 2013-04-24 |
Family
ID=42513794
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010121420 Active CN101777375B (en) | 2010-03-10 | 2010-03-10 | Method for matching induction amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101777375B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385898A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Regulating method of matching coefficient of induction amplifier |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987327A (en) * | 1989-05-30 | 1991-01-22 | Motorola, Inc. | Apparatus for adjusting DC offset voltage |
| US6301149B1 (en) * | 1999-02-26 | 2001-10-09 | Stmicroelectronics S.R.L. | Method for reading a multilevel nonvolatile memory and multilevel nonvolatile memory |
| US6388521B1 (en) * | 2000-09-22 | 2002-05-14 | National Semiconductor Corporation | MOS differential amplifier with offset compensation |
| CN1518211A (en) * | 2003-01-23 | 2004-08-04 | ��������˹�����տ����� | Adjustable shifting difference amplifier |
| CN101000793A (en) * | 2006-01-12 | 2007-07-18 | 国际商业机器公司 | Digital circuit and digital circuit adjustment method |
| US20080061745A1 (en) * | 2006-09-08 | 2008-03-13 | Ippei Nodo | Differential amplifier circuit and electric charge control apparatus using differential amplifier circuit |
-
2010
- 2010-03-10 CN CN 201010121420 patent/CN101777375B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4987327A (en) * | 1989-05-30 | 1991-01-22 | Motorola, Inc. | Apparatus for adjusting DC offset voltage |
| US6301149B1 (en) * | 1999-02-26 | 2001-10-09 | Stmicroelectronics S.R.L. | Method for reading a multilevel nonvolatile memory and multilevel nonvolatile memory |
| US6388521B1 (en) * | 2000-09-22 | 2002-05-14 | National Semiconductor Corporation | MOS differential amplifier with offset compensation |
| CN1518211A (en) * | 2003-01-23 | 2004-08-04 | ��������˹�����տ����� | Adjustable shifting difference amplifier |
| CN101000793A (en) * | 2006-01-12 | 2007-07-18 | 国际商业机器公司 | Digital circuit and digital circuit adjustment method |
| US20080061745A1 (en) * | 2006-09-08 | 2008-03-13 | Ippei Nodo | Differential amplifier circuit and electric charge control apparatus using differential amplifier circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102385898A (en) * | 2010-09-01 | 2012-03-21 | 上海宏力半导体制造有限公司 | Regulating method of matching coefficient of induction amplifier |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101777375B (en) | 2013-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102928727B (en) | Open circuit detecting device, circuit and method | |
| US8421452B2 (en) | Current sensor and battery with current sensor | |
| CN105375071A (en) | Lithium battery matching method | |
| CN103366790A (en) | Trimmable reference generator used for sense amplifier | |
| CN105048555B (en) | A kind of method and system of USB charger charging identification | |
| CN102237140B (en) | Fuse programming circuit and fuse programming method | |
| US8111084B2 (en) | Impedance calibration circuit and semiconductor apparatus using the same | |
| CN101871963A (en) | Power voltage detection circuit | |
| CN101464502A (en) | Method for batch automatic terminal calibration | |
| CN107607851A (en) | Voltage adjustment system and method | |
| CN106291330A (en) | Hall sensing chip and hall sensing chip calibration steps | |
| CN205986120U (en) | Battery protection system able to programme and battery protecting integrated circuit | |
| CN105336373B (en) | The calibration system and calibration method of Efuse module and its blowout current | |
| CN103116379A (en) | Self-calibration current source system | |
| CN101777375B (en) | Method for matching induction amplifier | |
| KR102037149B1 (en) | Current Measurement Apparatus and The Method of Using Temperature Dependent Resistance | |
| CN207096859U (en) | A kind of multi thresholds low-voltage detection circuit | |
| CN104063004A (en) | Self-adaption regulating circuit of constant current source, method and chip | |
| CN105321577A (en) | Data receiving chip | |
| CN201355876Y (en) | Power automatic calibration circuit of electromagnetic oven | |
| CN105891591A (en) | Large-power energy-storage inverter current detection and control system | |
| CN205901261U (en) | Circuit breaker control device | |
| CN202362263U (en) | Novel intelligent gas detector | |
| CN205176720U (en) | Band gap reference circuit that temperature coefficient is little | |
| CN204575715U (en) | Bridge diagram |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140506 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20140506 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |