CN101718743A - Method for preparing mixed conductor dense diffusion barrier-type oxygen sensor - Google Patents
Method for preparing mixed conductor dense diffusion barrier-type oxygen sensor Download PDFInfo
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- CN101718743A CN101718743A CN 200910154372 CN200910154372A CN101718743A CN 101718743 A CN101718743 A CN 101718743A CN 200910154372 CN200910154372 CN 200910154372 CN 200910154372 A CN200910154372 A CN 200910154372A CN 101718743 A CN101718743 A CN 101718743A
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Abstract
The invention provides a method for preparing a mixed conductor dense diffusion barrier-type oxygen sensor. The prepared oxygen sensor comprises an electrolyte layer, a dense diffusion barrier layer, an encapsulation layer, porous positive and negative collectors and the like. The electrolyte layer is made of a zirconia material; the dense diffusion barrier layer is made of a mixed conductor material consisting of zirconia and La1-xSrxMnO3; the encapsulation layer is made of glass glaze; the electrolyte layer and the dense diffusion barrier layer are formed by direct sintering through spark plasma sintering technology; porous positive and negative collector layers are formed by directly printing the positive and negative collectors on upper and lower surfaces of a composite material through screen printing and sintering the printed positive and negative collectors; and the encapsulation layer is coated at the edge of composite multi-layer ceramic. Due to the adoption of the spark plasma sintering technology, the prepared sensor solves the problems of turn-up, cracking and the like, has the characteristics of good repeatability, stable performance, simple preparation process, short preparation period, small volume, quick response and the like, and is suitable for the detection of wide oxygen concentration.
Description
Technical field
The present invention relates to a kind of preparation method of mixed conductor dense diffusion barrier-type oxygen sensor, be applicable to that the wide region oxygen concentration detects ZrO
2The preparation of base limit-current type oxygen sensor.
Background technology
The measurement of oxygen concentration is controlled at various industrial fields all vital role, especially in automobile, metallurgy, system oxygen industry, dividing by its principle at the sensor of using at present has: concentration potential type and limit-current type, wherein limit-current type oxygen sensor is with its precision height, response is fast, does not need advantage such as reference gas just being used widely in long service life and the use; Limit-current type oxygen sensor can be divided into hole diffusion barrier-type (comprising aperture diffusion barrier-type, porous diffusion barrier-type) and mixed conductor dense diffusion barrier-type again, for the hole diffusion barrier-type oxygen sensor, in long-term use, because solid particulate matter phenomenon of blocking in distortion and the gas can appear in the hole in its diffusion barrier, thereby causes the decline and the inefficacy of this type of sensor performance.Novel mixed conductor dense diffusion barrier-type oxygen sensor has adopted non-porous structure at present, overcome above-mentioned deficiency, and can control its diffusivity easily, thereby have advantages such as stable performance, technology be simple by control dense diffusion barrier proportioning components and sintering parameter.If but adopt traditional sintering means, there are problems such as compactness is poor, the sintering period is long in the Zirconia electrolytic pottery of preparation, on the other hand because dense diffusion barrier-type oxygen sensor is the composite ceramics that adopts rhythmo structure to constitute by Zirconia electrolytic layer and mixed conductor dense diffusion barrier layer, but be to use tradition burn altogether legal system when being equipped with because the two percent thermal shrinkage inconsistent in sintering process, can cause composite ceramics cracking, warp, problem such as separation, reduce the sealing of dense diffusion barrier layer, reduced the measurement range of lambda sensor oxygen concentration.
Summary of the invention
Technical matters to be solved by this invention is the present situation at prior art, and the lambda sensor that a kind of preparation is provided has the more measuring ability of wide region, and good reproducibility, fabrication cycle is short, and in the process of preparation, adopt discharge plasma sintering technique that MULTILAYER COMPOSITE pottery disposable integral is burnt altogether, have simplification technology, reduce production costs, the preparation method of the mixed conductor dense diffusion barrier-type oxygen sensor that economizes on resources.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of preparation method of mixed conductor dense diffusion barrier-type oxygen sensor is characterized in that: may further comprise the steps:
It is the zirconia material making dielectric substrate of 5%mol～12%mol that step 1 is to use yttrium content;
The measure of taking also comprises:
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, be specially zirconia and the La that to mix in the step 2
1-xSr
xMnO
3The mixed conductor material powder of forming is put into the cylindrical die that is lined with carbon paper and is gently pressed, form the dense diffusion barrier layer, the mould of again the zirconia material powder in the step 1 being packed into is placed on the dense diffusion barrier layer, form dielectric substrate, and on dielectric substrate, cover carbon paper.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, step 3 is specially puts into discharging plasma sintering equipment with the mould that powder is housed, the sintering chamber is evacuated to 5Pa, give powder axial pressure 40MPa～60Mpa in the mold cavity by last lower push rod, logical simultaneously big electric current makes sample be warming up to sintering temperature with the speed of 200 ℃/min～400 ℃/min, sintering temperature is controlled at 1050 ℃～1350 ℃ scopes, temperature retention time is 3min～5min, after finishing, sintering is cooled to room temperature with the stove pressurize, release then, take out mould, the demoulding obtains the composite multi-layer pottery, and with the MULTILAYER COMPOSITE pottery that the makes de-carbon of annealing.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, step 4 and step 5 are specially uses abrasive paper for metallograph that MULTILAYER COMPOSITE pottery upper and lower surface is carried out sanding and polishing, and adopt the thick film screen printing technique to make the negative collector of porous platinum material at the upper surface center of dense diffusion barrier layer, adopt the thick film screen printing technique to make the positive collector of porous platinum material at the lower surface center of dielectric substrate.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, described dense diffusion barrier layer has the solid oxygen ion diffusivity, under ordering about, concentration difference carried out the oxonium ion diffusion by the outside to diffusion barrier layer and dielectric substrate interface place by oxygen determination by diffusion barrier layer, and do not have in total under the prerequisite of hole gas leakage, its diffusivity is fully by the concentration difference of dense diffusion barrier layer both sides and the oxygen ion conduction rate of diffusion barrier layer material, area, the decision of parameters such as thickness, utilize fine and close diffusion layer material to have the ability of electronic conduction again, after applying driving voltage by additional power source to dielectric substrate, be diffused into diffusion barrier layer and dielectric substrate oxonium ion at the interface under electric field action again the dielectric substrate by having oxygen ion conduction to outside pumping, formation pump oxygen electric current.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, THICKNESS CONTROL is between 0.5mm～1.5mm behind the dense diffusion barrier layer sintering, THICKNESS CONTROL behind the dielectric substrate sintering is between 0.5mm～1mm, the encapsulated layer THICKNESS CONTROL is between 0.3mm～1mm, wherein the thickness of dielectric substrate accounts for 30%～40% of integral thickness, and the thickness of dense diffusion barrier layer accounts for 60%～70% of integral thickness.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, the area of positive collector and negative collector is decided according to the long-pending size of the upper and lower surface of composite multi-layer pottery, wherein positive collector accounts for 50%～80% of dielectric substrate lower surface area, and negative collector accounts for 50%～80% of dense diffusion barrier layer upper surface center.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, positive collector and negative collector all adopt alloy platinum material to make.
In the preparation method of above-mentioned a kind of mixed conductor dense diffusion barrier-type oxygen sensor, the lambda sensor operating temperature range of gained is 400 ℃～800 ℃, operating voltage is 0.4V～1.0V, and can detect the oxygen concentration scope is 0.1%～23%, and the response time was less than 10 seconds.
Compared with prior art, the invention has the advantages that the plasma discharging Fast Sintering technology that adopts, mainly be to utilize the pulse energy, a discharge pulse pressure and a joule thermogenetic TRANSIENT HIGH TEMPERATURE field realize that sintering obtains the Zirconia electrolytic pottery of density more than 99.9%, melt plasma activation, hot pressing, resistance heated is an one, it is fast to have programming rate, sintering time is short, energy consumption is low, sintered article crystal grain is tiny, even tissue and sintered body density advantages of higher, and the sintering period is short, and in sintering process, continue vertical uniaxial pressure and also help eliminating the cracking that percent thermal shrinkage does not match and brings in Zirconia electrolytic and the mixed conductor sintering process, warp, separate, phenomenons such as gas leakage, make mixed conductor dense diffusion barrier-type oxygen sensor can once burn till shape altogether, technology success ratio height, fabrication cycle is short, the sensitive element density height that is made into, dense diffusion barrier layer and dielectric substrate are combined.
Description of drawings
Fig. 1 is the whole sectional structure synoptic diagram of lambda sensor;
Fig. 2 is the vertical view of Fig. 1;
Fig. 3 is the upward view of Fig. 1;
Fig. 4 is the fundamental diagram of lambda sensor;
Fig. 5 is the voltage-current characteristic figure of lambda sensor;
Fig. 6 is the oxygen concentration-limiting current curve of lambda sensor;
Fig. 7 is curve time response of lambda sensor.
Embodiment
Below be specific embodiments of the invention and in conjunction with the accompanying drawings, technical scheme of the present invention is further described, but the present invention be not limited to these embodiment.
Extremely shown in Figure 7 as Fig. 1, among the figure, positive collector 1; Just going between 2; Dielectric substrate 3; Dense diffusion barrier layer 4; Negative collector 5; Negative lead-in wire 6; Encapsulated layer 7.
As shown in Figures 1 to 4, what the technology of the present invention prepared is a kind of limit-current type oxygen sensor, constitute by dielectric substrate 3, dense diffusion barrier layer 4, encapsulated layer 7 and positive collector 1, negative collector 5, on positive collector 1, be connected with and just go between 2, on negative collector 5, be connected with negative lead-in wire 6.Wherein dielectric substrate 3 is by discharge plasma sintering technique (SPS) the two sintering to be in the same place with dense diffusion barrier layer 4, here the discharge plasma sintering technique of indication is under the environment of vacuum, powder is contained in the mould, logical big electric current, pressurization is with a kind of technological means of the rapid densified sintering product of powder.Positive collector 1 adopts the thick film screen printing technique to be produced on the lower surface center of dielectric substrate 3, negative collector 5 same upper surface centers of adopting the thick film screen printing technique to be produced on dense diffusion barrier layer 4, positive collector 1 and negative collector 5 all adopt alloy platinum material to make, and encapsulated layer 7 is coated on dielectric substrate 3 and dense diffusion barrier layer 4 surface except that positive collector 1 and negative collector 5.Dielectric substrate 3 is made of zirconia material, and wherein yttrium content is the scope of 5%mol～12%mol, and dense diffusion barrier layer 4 is by zirconia and La
1-xSr
xMnO
3The mixed conductor material of forming constitutes, and wherein the content of zirconia material is the range of 0%-40%, and encapsulated layer 7 is glass glazes.
The technology of the present invention is to use discharge plasma sintering technique to prepare mixed conductor dense diffusion barrier-type oxygen sensor, and the process that the use discharge plasma sintering technique prepares dense diffusion barrier-type oxygen sensor is as follows: at first with the zirconia and the La that mix
1-xSr
xMnO
3The mixed conductor material powder of forming is put into the cylindrical die that is lined with carbon paper and is gently pressed, form dense diffusion barrier layer 4, the mould of again the zirconia material powder being packed into, be placed on the dense diffusion barrier layer 4, form dielectric substrate 3, on dielectric substrate 3, cover carbon paper, the mould that powder will be housed is put into discharging plasma sintering equipment then, the sintering chamber is evacuated to 5Pa, give powder axial pressure 40MPa～60Mpa in the mold cavity by last lower push rod, logical simultaneously big electric current, make sample be warming up to sintering temperature with the speed of 200 ℃/min～400 ℃/min, sintering temperature is 1050 ℃～1350 ℃ scopes, temperature retention time is 3min～5min, is cooled to room temperature with the stove pressurize after sintering is finished, then release, take out mould, the demoulding obtains the MULTILAYER COMPOSITE pottery, the de-carbon of again the MULTILAYER COMPOSITE pottery that makes being annealed under the air atmosphere of 800 ℃～1000 ℃ and 10 hours～20 hours uses abrasive paper for metallograph that MULTILAYER COMPOSITE pottery upper and lower surface is carried out sanding and polishing then; And adopt the thick film screen printing technique to make the negative collector 5 of porous platinum material at the upper surface center of dense diffusion barrier layer 4, adopt the thick film screen printing technique to make the positive collector 1 of porous platinum material at the lower surface center of dielectric substrate 3, under 800 ℃～1200 ℃ with positive collector 1 and negative collector 5 sinter moldings, apply the upper glass glaze at composite multi-layer pottery edge at last, be made into encapsulated layer 7.Because the axial pressure that exist to continue can make two kinds of materials combine closely, deficiencies such as the different materials percent thermal shrinkage inconsistently occurs warping, cracking have been overcome in above-mentioned sintering process.
The lambda sensor that this preparation method is worth wherein behind dense diffusion barrier layer 4 sintering THICKNESS CONTROL between 0.5mm～1.5mm, THICKNESS CONTROL behind dielectric substrate 3 sintering is between 0.5mm～1mm, encapsulated layer 7 THICKNESS CONTROL are between 0.3mm～1mm, wherein the thickness of dielectric substrate 3 accounts for 30%～40% of integral thickness, the thickness of dense diffusion barrier layer 4 accounts for 60%～70% of integral thickness, the area of positive collector 1 and negative collector 5 is decided according to the long-pending size of the upper and lower surface of composite multi-layer pottery, wherein positive collector 1 accounts for 50%～80% of dielectric substrate 3 lower surface areas, negative collector 5 accounts for 50%～80% of dense diffusion barrier layer 4 upper surface center, the lambda sensor operating temperature range of gained is 400 ℃～800 ℃, operating voltage is 0.4V～1.0V, can detect the oxygen concentration scope is 0.1%～23%, and the response time was less than 10 seconds.
Current oxygen sensors of the present invention is that to adopt discharge plasma sintering technique that mixed conductor material and oxonium ion solid electrolyte are carried out the multilayer densification compound, constitutes the stepped construction of a kind of dense diffusion barrier layer 4 and dielectric substrate 3.Its oxygen determination principle is as follows: utilize dense diffusion barrier layer 4 material to have the solid oxygen ion diffusivity, being hindered layer 4 and dielectric substrate 3 interface places to carry out oxonium ion by the outside to dense diffusion barrier by diffusion barrier layer by oxygen determination under concentration difference is ordered about spreads, and do not have in total under the prerequisite of hole gas leakage, its diffusivity is fully by the concentration difference of dense diffusion barrier layer 4 both sides and the oxygen ion conduction rate of diffusion barrier layer material, area, the decision of parameters such as thickness, utilize fine and close diffusion layer material to have the ability of electronic conduction again, after applying driving voltage for dielectric substrate 3 by additional power source, be diffused into dense diffusion barrier layer 4 and dielectric substrate 3 oxonium ion at the interface under electric field action again the dielectric substrate 3 by having oxygen ion conduction form pump oxygen electric current to outside pumping.Its size increases with the increase of voltage when driving voltage is low.But when driving voltage is increased to certain value, because the oxonium ion flow that pumps is limited by the oxonium ion flow that diffusion is come in fully, therefore, the plateau phenomenon that pump oxygen electric current no longer increases with the increase of voltage then can appear, be the maximal work state of sensor, the pump oxygen electric current of this moment is called the limiting current of sensor.Utilize the boundary condition under this ultimate limit state can set up limiting current I with relevant diffusion equation
LWith the tested oxygen concentration X in outside
02Between following single funtcional relationship, realized the electrical measurement of oxygen concentration.
In the formula: the F-Faraday constant; The R-gas law constant; D-oxygen coefficient of diffusion; T-absolute temperature; S-diffusion hole sectional area; L-diffusion hole length; P-environmental gas general pressure.From this formula as can be seen, by the output limit electric current I
LRealized the electric signal measurement of oxygen concentration.When Figure 5 shows that 700 ℃, the V-I characteristic working curve of lambda sensor.As can be seen, oxygen concentration is in the 0.1%-23% scope among the figure, and the current saturation platform all appears in operating voltage between 0.4-1V, obtains oxygen concentration and limiting current value I by Fig. 5
LRelation curve Fig. 6, among the figure as can be seen, oxygen concentration and limiting current value I
LRelation and the height of above-mentioned theory meet, Fig. 7 is curve time response of lambda sensor, shows good repeatability and less than 10 seconds quick response.
The invention has the advantages that and adopt discharge plasma sintering technique to make, thus the gained sensor do not exist warp, problems of crack, and good reproducibility, stable performance, manufacturing process is simple, fabrication cycle is short, volume is little, fast characteristics such as response.
Specific embodiment described herein only is that the present invention's spirit is illustrated.The technician of the technical field of the invention can make various modifications or replenishes or adopt similar mode to substitute described specific embodiment, but can't depart from the defined scope of spirit of the present invention.
Claims (9)
1. the preparation method of a mixed conductor dense diffusion barrier-type oxygen sensor is characterized in that: may further comprise the steps:
It is the zirconia material making dielectric substrate (3) of 5%mol～12%mol that step 1 is to use yttrium content;
Step 2 is to use by zirconia and La
1-xSr
xMnO
3The mixed conductor material of forming is made dense diffusion barrier layer (4), wherein La
1-xSr
xMnO
3In X=0.2～0.4, the content of zirconia material is in the 0%-40% range;
Step 3 is to adopt discharge plasma sintering technique, sinters described dense diffusion barrier layer (4) and dielectric substrate (3) into the composite multi-layer pottery with rhythmo structure in 1050 ℃～1350 ℃ sintering ranges;
Step 4 is to adopt the thick film screen printing technique to print negative collector (5) at dense diffusion barrier layer (4) upper surface center;
Step 5 is to adopt the thick film screen printing technique to print positive collector (1) at dielectric substrate (3) lower surface center;
Step 6 be once more with the positive collector (1) of above-mentioned printing and negative collector (5) in high temperature furnace with sintering in 800 ℃～1200 ℃ temperature ranges;
Step 7 is to apply the upper glass glaze at composite multi-layer pottery edge to make encapsulated layer (7).
2. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 1 is characterized in that: be specially zirconia and the La that will mix in the described step 2
1-xSr
xMnO
3The mixed conductor material powder of forming is put into the cylindrical die that is lined with carbon paper and is gently pressed, form dense diffusion barrier layer (4), the mould of again the zirconia material powder in the step 1 being packed into, be placed on the dense diffusion barrier layer (4), form dielectric substrate (3), and go up the covering carbon paper at dielectric substrate (3).
3. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 2, it is characterized in that: described step 3 is specially puts into discharging plasma sintering equipment with the mould that powder is housed, the sintering chamber is evacuated to 5Pa, give powder axial pressure 40MPa～60Mpa in the mold cavity by last lower push rod, logical simultaneously big electric current makes sample be warming up to sintering temperature with the speed of 200 ℃/min～400 ℃/min, sintering temperature is controlled at 1050 ℃～1350 ℃ scopes, temperature retention time is 3min～5min, after finishing, sintering is cooled to room temperature with the stove pressurize, release then, take out mould, the demoulding obtains the composite multi-layer pottery, and with the MULTILAYER COMPOSITE pottery that the makes de-carbon of annealing.
4. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 3, it is characterized in that: described step 4 and step 5 are specially uses abrasive paper for metallograph that MULTILAYER COMPOSITE pottery upper and lower surface is carried out sanding and polishing, and adopt the thick film screen printing technique to make the negative collector (5) of porous platinum material at the upper surface center of dense diffusion barrier layer (4), adopt the thick film screen printing technique to make the positive collector (1) of porous platinum material at the lower surface center of dielectric substrate (3).
5. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 4, it is characterized in that: described dense diffusion barrier layer (4) has the solid oxygen ion diffusivity, being hindered layer (4) and dielectric substrate (3) interface place to carry out oxonium ion by the outside to dense diffusion barrier by diffusion barrier layer by oxygen determination under concentration difference is ordered about spreads, and do not have in total under the prerequisite of hole gas leakage, its diffusivity is fully by the concentration difference of dense diffusion barrier layer (4) both sides and the oxygen ion conduction rate of diffusion barrier layer material, area, the decision of parameters such as thickness, utilize fine and close diffusion layer material to have the ability of electronic conduction again, after applying driving voltage for dielectric substrate (3) by additional power source, be diffused into dense diffusion barrier layer (4) and dielectric substrate (3) oxonium ion at the interface under electric field action again the dielectric substrate (3) by having oxygen ion conduction form pump oxygen electric current to outside pumping.
6. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 5, it is characterized in that: THICKNESS CONTROL is between 0.5mm～1.5mm behind described dense diffusion barrier layer (4) sintering, THICKNESS CONTROL behind dielectric substrate (3) sintering is between 0.5mm～1mm, encapsulated layer (7) THICKNESS CONTROL is between 0.3mm～1mm, wherein the thickness of dielectric substrate (3) accounts for 30%～40% of integral thickness, and the thickness of dense diffusion barrier layer (4) accounts for 60%～70% of integral thickness.
7. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 6, it is characterized in that: the area of described positive collector (1) and negative collector (5) is decided according to the long-pending size of the upper and lower surface of composite multi-layer pottery, wherein positive collector (1) accounts for 50%～80% of dielectric substrate (3) lower surface area, and negative collector (5) accounts for 50%～80% of dense diffusion barrier layer (4) upper surface center.
8. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 7, it is characterized in that: described positive collector (1) and negative collector (5) all adopt alloy platinum material to make.
9. the preparation method of a kind of mixed conductor dense diffusion barrier-type oxygen sensor according to claim 8, it is characterized in that: the lambda sensor operating temperature range of gained is 400 ℃～800 ℃, operating voltage is 0.4V～1.0V, can detect the oxygen concentration scope is 0.1%～23%, and the response time was less than 10 seconds.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101936942A (en) * | 2010-08-25 | 2011-01-05 | 宁波大学 | Limiting current oxygen sensor |
| CN102140953A (en) * | 2010-12-30 | 2011-08-03 | 西藏瑞阳科技发展有限公司 | Method for manufacturing oxygen sensor chip |
| CN102183567A (en) * | 2011-03-17 | 2011-09-14 | 奇瑞汽车股份有限公司 | Manufacture method for limiting current type oxygen sensor |
| CN104165905A (en) * | 2014-08-25 | 2014-11-26 | 深圳市宏业翔科技有限公司 | Oxygen sensor chip and preparation method thereof |
| CN104838259A (en) * | 2012-11-22 | 2015-08-12 | 株式会社电装 | Electrode for gas sensor and gas sensor element using same |
| CN106979967A (en) * | 2017-04-11 | 2017-07-25 | 东北大学 | The method that discharge voltage time curve is obtained using potentiometric oxygen sensor |
| CN107796860A (en) * | 2016-08-29 | 2018-03-13 | 南京瀚雅健康科技有限公司 | A kind of current type solid electrolyte oxygen analyte sensors |
| CN110483100A (en) * | 2019-08-22 | 2019-11-22 | 广西优艾斯提传感技术有限公司 | A kind of aging technique of ceramic chip |
| CN111322941A (en) * | 2020-04-20 | 2020-06-23 | 威海华菱光电股份有限公司 | Film thickness detection device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3910663A1 (en) * | 1989-04-03 | 1990-10-04 | Bayer Ag | 5-ALKYLCHINOLON CARBONIC ACIDS |
| CN101000320A (en) * | 2006-12-25 | 2007-07-18 | 杨世养 | Chip oxygen sensor and its preparation method |
| CN101566598A (en) * | 2008-04-25 | 2009-10-28 | 吉林大学 | ZrO2 oxygen sensor for solid state reference partial pressure of oxygen and manufacture method thereof |
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- 2009-11-30 CN CN 200910154372 patent/CN101718743B/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101936942A (en) * | 2010-08-25 | 2011-01-05 | 宁波大学 | Limiting current oxygen sensor |
| CN101936942B (en) * | 2010-08-25 | 2013-05-15 | 宁波大学 | Limiting current oxygen sensor |
| CN102140953A (en) * | 2010-12-30 | 2011-08-03 | 西藏瑞阳科技发展有限公司 | Method for manufacturing oxygen sensor chip |
| CN102183567A (en) * | 2011-03-17 | 2011-09-14 | 奇瑞汽车股份有限公司 | Manufacture method for limiting current type oxygen sensor |
| CN102183567B (en) * | 2011-03-17 | 2014-03-12 | 奇瑞汽车股份有限公司 | Manufacture method for limiting current type oxygen sensor |
| CN104838259A (en) * | 2012-11-22 | 2015-08-12 | 株式会社电装 | Electrode for gas sensor and gas sensor element using same |
| CN104165905A (en) * | 2014-08-25 | 2014-11-26 | 深圳市宏业翔科技有限公司 | Oxygen sensor chip and preparation method thereof |
| CN107796860A (en) * | 2016-08-29 | 2018-03-13 | 南京瀚雅健康科技有限公司 | A kind of current type solid electrolyte oxygen analyte sensors |
| CN107796860B (en) * | 2016-08-29 | 2024-01-23 | 江苏瀚雅医疗科技有限公司 | Current type solid electrolyte oxygen analysis sensor |
| CN106979967A (en) * | 2017-04-11 | 2017-07-25 | 东北大学 | The method that discharge voltage time curve is obtained using potentiometric oxygen sensor |
| CN110483100A (en) * | 2019-08-22 | 2019-11-22 | 广西优艾斯提传感技术有限公司 | A kind of aging technique of ceramic chip |
| CN111322941A (en) * | 2020-04-20 | 2020-06-23 | 威海华菱光电股份有限公司 | Film thickness detection device |
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| CN101718743B (en) | 2013-03-20 |
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