CN101665351A - Ceramic baseplate material and preparation method thereof as well as chip fuse prepared by material - Google Patents
Ceramic baseplate material and preparation method thereof as well as chip fuse prepared by material Download PDFInfo
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- CN101665351A CN101665351A CN 200910023990 CN200910023990A CN101665351A CN 101665351 A CN101665351 A CN 101665351A CN 200910023990 CN200910023990 CN 200910023990 CN 200910023990 A CN200910023990 A CN 200910023990A CN 101665351 A CN101665351 A CN 101665351A
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Abstract
The invention discloses a ceramic baseplate material and a preparation method thereof as well as a chip fuse prepared by the material. The ceramic baseplate material comprises the following componentsin percentage by weight: 90-82 Al2O3, 4-8 Bi2O3 and 0-5 cosolvent, wherein the Al2O3 and the Bi2O3 are at an analytic reagent level; and the cosolvent is one or a mixture of Li2CO3, CaF3 and LiF. Main components of the ceramic baseplate material comprise the Al2O3 and the Bi2O3 which are at the analytic reagent level and extremely simple and very easy to control in a preparation aspect. The invention controls a sintering temperature to below 1000 DEG C in the preparation process and decreases the production cost; and the Bi2O3 in sintering can form a liquid phase to lower the sintering temperature of the Al2O3 and adjust thermodynamic parameters of a baseplate by being mixed with the Al2O3 in different ratios so as to satisfy different use requirements. The chip fuse comprises a ceramic baseplate, a metal fuse unit and a metal terminal, has small fuse size; in addition, a positive electrode and a negative electrode can be mounted without restriction.
Description
Technical field
The invention belongs to ceramic substrate and make the field; Relate to a kind of aluminium oxide ceramic substrate material, especially a kind of Low-Temperature Sintered Alumina Ceramics baseplate material and preparation method thereof and with the chip fuse of this material preparation.
Background technology
Traditional fusible cut-out (claiming safety fuse again) generally is to be divided into main purpose with the protection power input part, and promptly we often see is such as the sheet type fusible cut-out in glass tubular fuse and the automobile etc.Along with the variation and novelization of electronic product development, fusible cut-out has derived many new purposes, as the protection of device interior printed board and IC etc., the protection of imput output circuit etc.As the protecting component of electronics, the glass tubular fuse is by life-time service and since it have volume big, easily broken, can't realize shortcoming such as automatization installation, can not satisfy the needs of modern electronic product development.
At present surface mounting fuse protector is mainly and makes single thin film or thick film metal fusing unit on Resins, epoxy substrate or ceramic bases, with polymkeric substance or glass material seal, end electrode applies shape with copper/nickel/tin/lead (95/5) and applies.Because the restriction of manufacturing process, the chip fuse of this class routine in use comes with some shortcomings: arc extinguishing is bad during fusing, to have flashing to burn encapsulated layer phenomenon, fusible cut-out aging etc., and owing to used Resins, epoxy or other polymer materials, so the use temperature of this series products is all lower at present, can't obtain the use temperature scope of broad.
Abroad the ltcc substrate material choose and preparation technology has obtained a lot of gratifying effects, adding glass is the important measures that realize the LTCC technology, the ratio of ceramic powder is the key factor of decision material physical property and electrical property, for obtaining the substrate of low-k, must select the glass and the pottery of low-k, mainly contain pyrex/filler, glass/alumina series, glass/mullite system etc., require weighting material when sintering, can form preferably and soak into glass.
Research and development in recent years are mainly devitrified glass system and glass, Ceramic Composite system two classes, as Al
2O
3-MgO-B
2O
3-P
2O
5Devitrified glass system, silicate adds Al
2O
3, SiO
2The compound system of glass-ceramic, boric acid silicon salt glass adds SiO
2Ceramic Composite is BSGC, baseplate materials such as the compound system of high silica glass pottery HSGC.For reducing the specific inductivity of glass/alumina series, in aluminum oxide, additional proportion approximately is the glass ingredient of 50: 50 low-k.
Between the different media material layer in sintering temperature, the mismatch of aspects such as sintering densification speed, sintering shrinkage and coefficient of thermal expansion, can cause common burning body to produce very big internal stress, easily produce defectives such as slabbing, warpage and crackle, the control of the control of different media sintering shrinkage stability and lower thermal conductivity and the reaction of medium interface layer also is the problem that needs solution, the zero-shrinkage casting belt, add some high thermal conductivity materials to improve the thermal conductivity of material in pottery, further reducing specific inductivity etc. all will be the LTCC Developing Trend in Technology.
The patent No. is a chip fuse involved in the prospectus of CN01213073.7, mainly comprises fusible link, inserted sheet, diode, current-limiting resistance and shell, and is in parallel with fusible cut-out after diode is connected with current-limiting resistance.When certain circuit overload or short circuit, fusible link is fusing just, and the shinny warning of diode indicates this circuit that fault is arranged.With led lighting indicating circuit fault, the positive cross-demand when installing owing to diode has limited the mounting means of fusible cut-out in this chip fuse, adopts diode to report to the police simultaneously, needs series limiting resistor, makes that again the volume of fusible cut-out is big, the cost height.
The patent No. is that involved fusible cut-out body material is mainly nanometer silicon carbide-alumina composite ceramic material in 200610161368.1 the prospectus, the fusible cut-out volume is little, but the higher and fusible cut-out of sintering temperature is the single-layer ceramic matrix and adopts the thick film screen printing technology in the preparation technology of matrix, has increased manufacturing cost.
In order to address the above problem, need find a kind of multilayer sheet type fuse products of high-speed, high reliability.
Summary of the invention
The objective of the invention is to overcome the shortcoming of above-mentioned prior art, provide a kind of ceramic substrate material and preparation method thereof and with the chip fuse of this material preparation.This baseplate material adopts simple component, and sintering temperature is controlled at below 1000 ℃, effectively reduces production costs, and utilize this baseplate material to prepare the chip fuse of multilayer ceramic matrix, its volume is little, and is simple in structure, and preparation technology realizes easily.
The objective of the invention is to solve by the following technical programs:
This ceramic substrate material by weight percentage, comprises following component:
Al
2O
3: 90%～92%; Bi
2O
3: 4%～8%; Solubility promoter: 0%～5%; Described Al
2O
3And Bi
2O
3Be the analytical pure level, described solubility promoter is Li
2CO
3, CaF
2With one or more mixtures among the LiF.
A kind of preparation method of above-mentioned ceramic substrate material specifically may further comprise the steps:
1) takes by weighing Al according to weight percent
2O
3, Bi
2O
3With the powder of solubility promoter, each component mixing is placed in the ball grinder of nylon material, and in mixture, adds ethanol or water, to grind 12～24 hours, oven dry obtains powder; The quality that adds ethanol or water is 1.5～3 times of mixture total mass;
2) the gained powder is put into electric furnace, at first made furnace temperature evenly rise to 500 ℃, and furnace temperature was kept 2～3 hours down in 500 ℃ from room temperature with 1～2 hour; Made furnace temperature evenly rise to 800 ℃ with 3～4 hours again, furnace temperature was kept 3～4 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 1-2 hour at last and finish sintering;
3) material behind the sintering is taken out grinding and obtain described ceramic substrate material.
In the above step 1), described Al
2O
3And Bi
2O
3Particle diameter be 0.1 μ m～5 μ m.A kind of chip fuse comprises that by the multilayer rectangle ceramic substrate of above-mentioned ceramic substrate material preparation accompany fusible link between each layer of multilayer rectangle ceramic substrate, multilayer rectangle ceramic plate two ends are coated with the metal termination that links to each other with the fusible link two ends.
The present invention has following beneficial effect:
The main component of ceramic substrate material is the Al of analytical pure level in the present invention
2O
3And Bi
2O
3, its component is very simple, and ratio is easier to control aspect batching, and the present invention is controlled at sintering temperature below 1000 ℃ in preparation process, has reduced production cost; Bi
2O
3When sintering, can form liquid phase, reduce the sintering temperature of aluminum oxide, mix by different ratios and can regulate the thermodynamical coordinate of substrate, thereby satisfy different service requirementss with alumina-ceramic.Chip fuse provided by the invention comprises ceramic substrate, metal fusing unit (fusible link) and metal termination, and the fusible cut-out volume of this structure is little, and positive antipole without limits in the installation.
Description of drawings
Fig. 1 is an electric furnace sintering curre synoptic diagram of the present invention.
Embodiment
Embodiment 1
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 90%; Bi
2O
3: 8%; Li
2CO
3: 2%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m;
(2) each component mixing is placed in the ball grinder of nylon material, and adds the ethanol that quality is 1.5 times of mixture total masses in mixture, ground 12 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2 hours down in 500 ℃ with 1 hour time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3 hours again, furnace temperature was kept 3 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 1 hour at last and finish sintering (concrete sintering curre as shown in fig. 1); The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse is such: prepare the multilayer rectangle ceramic substrate by ceramic substrate material, and folder is established fusible link between each layer of multilayer rectangle ceramic substrate, and multilayer rectangle ceramic substrate two ends are coated with the metal termination that links to each other with the fusible link two ends.The preparation process of this chip fuse is as follows:
1) casting technique prepares ceramic substrate.
The ceramic matrix material of above preparation is added organic solvent, binding agent and softening agent, and with Al
2O
3Ball carries out the ball milling of casting slurry for mill is situated between, behind the ball milling 48 hours, add the secondary ball milling mixing that functional additive (wetting agent and defoamer) carried out 2 hours, behind 200 eye mesh screens, prepare to go up the wet method film pulling device and carry out membrane, prepare the thick ceramic substrate of one deck 2mm, at room temperature placed 7 days, it is stand-by after 72 hours to change the interior placement of baking oven over to;
2) use screen printing technique on substrate, to print the electro-conductive material (be fusible link) of thickness, after drying leaves standstill 100-120 hour as 0.4mm; Prepare the chip fuse biscuit that lamination goes out 8mm * 5mm * 12mm size through longitudinal and transverse cut mechanically and carry out sintering, biscuit surface finish chamfering behind the sintering is screened, biscuit two ends behind sintering apply the metal termination (being that silver-colored silver ink firing is stained with at two ends) that links to each other with the electro-conductive material two ends then, obtain final chip fuse through plating again.
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 92%; Bi
2O
3: 4%; LiF:4%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m;
(2) each component mixing is placed in the ball grinder of nylon material, and adds the water that quality is 3 times of mixture total masses in mixture, ground 24 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 3 hours down in 500 ℃ with 2 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 4 hours again, furnace temperature was kept 4 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 3
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 91%; Bi
2O
3: 5%; CaF
2: 4%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m;
(2) each component mixing is placed in the ball grinder of nylon material, and adds the water that quality is 2 times of mixture total masses in mixture, ground 20 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 4
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 91.5%; Bi
2O
3: 6%; Solubility promoter: 2.5%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m; Solubility promoter is CaF
2With LiF with arbitrarily than blended mixture.
(2) each component mixing is placed in the ball grinder of nylon material, and adds the water that quality is 2 times of mixture total masses in mixture, ground 20 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 5
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 92%; Bi
2O
3: 8%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m.
(2) each component mixing is placed in the ball grinder of nylon material, and adds the ethanol that quality is 2 times of mixture total masses in mixture, ground 20 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 6
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 92%; Bi
2O
3: 7%; Solubility promoter: 1%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m; Solubility promoter is Li
2CO
3And CaF
2With arbitrarily than blended mixture.
(2) each component mixing is placed in the ball grinder of nylon material, and adds the ethanol that quality is 1.5 times of mixture total masses in mixture, ground 18 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 7
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 91%; Bi
2O
3: 6%; Solubility promoter: 3%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m; Solubility promoter is Li
2CO
3With LiF with arbitrarily than blended mixture.
(2) each component mixing is placed in the ball grinder of nylon material, and adds the ethanol that quality is 1.5 times of mixture total masses in mixture, ground 18 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 8
(1) by weight percentage, weigh following component respectively:
Al
2O
3: 91.5%; Bi
2O
3: 7%; Solubility promoter: 1.5%; Al wherein
2O
3And Bi
2O
3Be the analytical pure level, particle diameter is 0.1 μ m～5 μ m; Solubility promoter is Li
2CO
3With LiF with arbitrarily than blended mixture.
(2) each component mixing is placed in the ball grinder of nylon material, and adds the ethanol that quality is 1.5 times of mixture total masses in mixture, ground 18 hours, oven dry obtains powder; The gained powder is put into electric furnace, at first evenly rise to 500 ℃, and furnace temperature was kept 2.5 hours down in 500 ℃ with 1.5 hours time chien shih furnace temperature; Made furnace temperature evenly rise to 800 ℃ with 3.5 hours again, furnace temperature was kept 3.5 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 2 hours at last and finish sintering; The taking-up of material behind the sintering is ground to form the powder that granularity is 3 μ m, and the gained powder is described ceramic substrate material.
Utilize the above-mentioned ceramic substrate material that makes to prepare chip fuse, the structure of this chip fuse and preparation method all with embodiment 1 in identical.
Embodiment 9
1) preparation of baseplate material
According to massfraction ratio weighing 20gAl
2O
3, 1.8gBi
2O
3(analytical pure) places the ball grinder of nylon material with institute's weighing compound, adds dehydrated alcohol (be about compound total amount 1.5 times), ball milling was dried in baking oven after 12 hours, can obtain the powder of granularity at 0.1 μ m～5 μ m, grinding is sieved, and obtains the ceramic matrix material that granularity is 3 μ m;
2) casting technique prepares ceramic diaphragm
With granularity is ceramic matrix material adding organic solvent, binding agent and the softening agent of 3 μ m, with Al
2O
3Ball carries out the ball milling of casting slurry for mill is situated between, behind the ball milling 48 hours, after the secondary ball milling that adding functional additive (wetting agent and defoamer) carried out 2 hours mixes, cross and go up the wet method film pulling device behind 200 eye mesh screens and carry out membrane, prepare at room temperature place behind one deck (2mm) change over to after 7 days place after 72 hours in the baking oven stand-by;
3) chip fuse specimen preparation
Use screen printing technique on substrate, to print electro-conductive material (thickness is 0.4mm), after drying leaves standstill 100-120 hour; Prepare the chip fuse biscuit that lamination goes out 8mm * 5mm * 12mm size through longitudinal and transverse cut mechanically and carry out sintering, with the screening of the biscuit surface finish chamfering behind the sintering, silver-colored silver ink firing is stained with at two ends then, obtains final chip fuse through plating again.
Embodiment 10
1) preparation of baseplate material
According to massfraction ratio weighing 20gAl
2O
3, 1gBi
2O
3(analytical pure), institute's weighing compound is placed the ball grinder of nylon material, add dehydrated alcohol (be about compound total amount 1.5 times), ball milling was dried in baking oven after 24 hours, can obtain the powder of granularity at (0.1 μ m～5 μ m), grinding is sieved, and obtains requiring the ceramic matrix material (4 μ m) of granularity;
2) casting technique prepares ceramic diaphragm
With granularity is ceramic matrix material adding organic solvent, binding agent and the softening agent of 4 μ m, with Al
2O
3Ball carries out the ball milling of casting slurry for mill is situated between, behind the ball milling 48 hours, after the secondary ball milling that adding functional additive (wetting agent and defoamer) carried out 2 hours mixes, cross and prepare to go up the wet method film pulling device behind 200 eye mesh screens and carry out membrane, prepare at room temperature place behind one deck (3mm) change over to after 7 days place after 72 hours in the baking oven stand-by;
3) chip fuse specimen preparation
Use screen printing technique on substrate, to print electro-conductive material (thickness is 0.5mm), after drying leaves standstill 100-120 hour; Prepare the chip fuse biscuit that lamination goes out 10mm * 5mm * 14mm size through longitudinal and transverse cut mechanically and carry out sintering, with the screening of the biscuit surface finish chamfering behind the sintering, silver-colored silver ink firing is stained with at two ends then, obtains final chip fuse through plating again.
In sum, ceramic substrate material of the present invention is made up of some simple common feed composition, and sintering temperature is controlled at below 1000 ℃ in its preparation method, Bi
2O
3When sintering, can form liquid phase, reduce the sintering temperature of aluminum oxide, mix by different ratios and can regulate the thermodynamical coordinate of substrate, thereby satisfy different service requirementss with alumina-ceramic.The ceramic substrate refabrication that adopts this ceramic substrate material to make becomes chip fuse, and this chip fuse employing multilayer ceramic matrix and the preparation of thin layer screen printing technique, and technology is simple, and cost is very low.
Claims (4)
1. a ceramic substrate material is characterized in that, by weight percentage, comprises following component: Al
2O
3: 90%～92%; Bi
2O
3: 4%～8%; Solubility promoter: 0%～5%; Described Al
2O
3And Bi
2O
3Be the analytical pure level, described solubility promoter is Li
2CO
3, CaF
2With one or more the mixture among the LiF.
2. the preparation method of the described ceramic substrate material of claim 1 is characterized in that, may further comprise the steps:
1) takes by weighing Al according to weight percent
2O
3, Bi
2O
3With the powder of solubility promoter, each component mixing is placed in the ball grinder of nylon material, and in mixture, adds ethanol or water, to grind 12～24 hours, oven dry obtains powder; The quality that adds ethanol or water is 1.5～3 times of mixture total mass;
2) the gained powder is put into electric furnace, at first made furnace temperature evenly rise to 500 ℃, and furnace temperature was kept 2～3 hours down in 500 ℃ from room temperature with 1～2 hour; Made furnace temperature evenly rise to 800 ℃ with 3～4 hours again, furnace temperature was kept 3～4 hours down at 800 ℃; Make furnace temperature evenly reduce to normal temperature with 1-2 hour at last and finish sintering;
3) taking-up of the material behind the sintering is ground to form the powder that granularity is 3 μ m, the gained powder is described ceramic substrate material.
3. according to the preparation method of the described ceramic substrate material of claim 2, it is characterized in that the described Al of step 1)
2O
3And Bi
2O
3Particle diameter be 0.1 μ m～5 μ m.
4. chip fuse of ceramic substrate material preparation according to claim 1, it is characterized in that: prepare the multilayer rectangle ceramic substrate by described ceramic substrate material, accompany fusible link between each layer of described multilayer rectangle ceramic substrate, described multilayer rectangle ceramic plate two ends are coated with the metal termination that links to each other with the fusible link two ends.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910023990 CN101665351B (en) | 2009-09-22 | 2009-09-22 | Ceramic baseplate material and preparation method thereof as well as chip fuse prepared by material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200910023990 CN101665351B (en) | 2009-09-22 | 2009-09-22 | Ceramic baseplate material and preparation method thereof as well as chip fuse prepared by material |
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| Publication Number | Publication Date |
|---|---|
| CN101665351A true CN101665351A (en) | 2010-03-10 |
| CN101665351B CN101665351B (en) | 2013-03-20 |
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ID=41802160
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|---|---|---|---|
| CN 200910023990 Expired - Fee Related CN101665351B (en) | 2009-09-22 | 2009-09-22 | Ceramic baseplate material and preparation method thereof as well as chip fuse prepared by material |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503382A (en) * | 2011-11-04 | 2012-06-20 | 东莞市凯昶德电子科技股份有限公司 | Al2O3 ceramic material for LED radiating substrate |
| CN105367109A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High-density silicon carbide-based ceramic circuit board substrate material containing nanometer yttrium aluminum garnet powder and preparation method thereof |
| CN107316783A (en) * | 2017-08-24 | 2017-11-03 | 中国振华集团云科电子有限公司 | Ceramic square tube printing process |
| CN114315325A (en) * | 2021-11-25 | 2022-04-12 | 郴州功田电子陶瓷技术有限公司 | Low-temperature sintered black alumina ceramic |
| CN117069482A (en) * | 2023-08-15 | 2023-11-17 | 湖南省新化县恒生电子陶瓷有限责任公司 | Alumina ceramic for new energy automobile fuse and preparation method thereof |
-
2009
- 2009-09-22 CN CN 200910023990 patent/CN101665351B/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102503382A (en) * | 2011-11-04 | 2012-06-20 | 东莞市凯昶德电子科技股份有限公司 | Al2O3 ceramic material for LED radiating substrate |
| CN105367109A (en) * | 2015-10-27 | 2016-03-02 | 合肥龙多电子科技有限公司 | High-density silicon carbide-based ceramic circuit board substrate material containing nanometer yttrium aluminum garnet powder and preparation method thereof |
| CN107316783A (en) * | 2017-08-24 | 2017-11-03 | 中国振华集团云科电子有限公司 | Ceramic square tube printing process |
| CN114315325A (en) * | 2021-11-25 | 2022-04-12 | 郴州功田电子陶瓷技术有限公司 | Low-temperature sintered black alumina ceramic |
| CN117069482A (en) * | 2023-08-15 | 2023-11-17 | 湖南省新化县恒生电子陶瓷有限责任公司 | Alumina ceramic for new energy automobile fuse and preparation method thereof |
| CN117069482B (en) * | 2023-08-15 | 2024-02-02 | 湖南省新化县恒生电子陶瓷有限责任公司 | Alumina ceramic for new energy automobile fuse and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101665351B (en) | 2013-03-20 |
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