CN101585660B - Preparation of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor - Google Patents

Preparation of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor Download PDF

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Publication number
CN101585660B
CN101585660B CN2009100406724A CN200910040672A CN101585660B CN 101585660 B CN101585660 B CN 101585660B CN 2009100406724 A CN2009100406724 A CN 2009100406724A CN 200910040672 A CN200910040672 A CN 200910040672A CN 101585660 B CN101585660 B CN 101585660B
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China
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glass powder
silicon
lead
semiconductor
passivation
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CN2009100406724A
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Chinese (zh)
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CN101585660A (en
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曾文
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珠海彩珠实业有限公司
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Abstract

The invention discloses a lead-silicon-aluminum glass powder for passivation encapsulation of a semiconductor, comprising the following components by weight percentage: 30-65% of PbO, 30-55% of SiO2, 5-18% of B2O3, 1-10% of Al2O3, 0.5-2% of Sb2O3, 1-6% of Bi2O3, 0-3% of PbF2, 0-2% of CeO2, 2-2% of As2O3, and 0-7% of V2O5. The invention aims to solve the disadvantages of the prior art and provides a lead-silicon-aluminum glass powder which has excellent chemical stability, electrical properties, good compatibility with the expansion coefficient of silicon chips and relatively low sintering temperature, and does not separate out crystal after being sintered. The passivation layer has good air tightness. The glass powder is applied to the passivation encapsulation of triode, controlled silicon and silicon semiconductor diode and the like in the mesa recess passivation technology. The invention further aims to provide a method for preparation of the glass powder.

Description

A kind of preparation method of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor

Technical field

The present invention relates to a kind of preparation method of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor.

Background technology

Because semiconductor surface is subject to the influence of extraneous atmosphere, for keeping its electrical specification, make it to work steadily in the long term, semiconductor element (particularly PN junction surface) except that contact conductor, must seal with insulating material fully.The guard method that semiconductor element is avoided ectocine has varied, is more effective advanced method both at home and abroad at present with the passivation glass protection wherein, in semiconductor silicon element making processes by employing at large.Therefore; Prepare a kind of have good electric property and safety, good chemicalstability, suitable thermal expansivity and the low lead-silicon-aluminum passivation glass material of temperature that burns till; To improve stability, the safety of semiconductor silicon device; Can be applicable to the passivation protection and the encapsulation of semiconductor silicon device, will be with a wide range of applications and vast market prospect.

Summary of the invention

The objective of the invention is in order to overcome weak point of the prior art; A kind of lead-silicon-aluminum glass powder is provided; It has good chemicalstability and electric property, good and have a lower firing temperature with the coefficient of expansion matching of silicon substrate; And after burning till, do not separate out crystal, and the passivation layer resistance to air loss is good, and the passivation that is fit to be applied to triode, silicon controlled rectifier and the silicon semiconductor diode etc. of table top groove passivation technology encapsulates.

Another object of the present invention provides a kind of method for preparing above-mentioned glass powder.

In order to achieve the above object, the present invention adopts following scheme:

A kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor wherein comprises following component by the quality percentage composition:

PbO 30-65% SiO 2 30-55%

B 2O 3 5-18% ?Al 2O 3 1-10%

Sb 2O 3 0.5-2% ?Bi 2O 3 ?1-6%。

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, wherein it comprises following component by the quality percentage composition:

PbF 2 0-3% CeO 2 0-2%

As 2O 3 0-2% V 2O 5 0-7%。

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, wherein also including the quality percentage composition is the low bulk property additive of 0-20%.

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, wherein low bulk property additive is silica sand, aluminium titanates (Al 2O 3TiO 2), lead titanate (PbTiO 3), one or more the mixture in the trichroite.

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, the maximum particle diameter of wherein said low bulk property additive agent powder is less than 10 μ m.

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, the thermal expansivity of wherein said glass powder are 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.

Aforesaid a kind of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, wherein said glass powder can pass through 400 mesh standard sieves, and its median size is 3.0 ± 0.5 μ m.

A kind of method for preparing lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor, comprising following steps:

A, each component raw material in the glass formula is carried out weighing by mass percentage, thorough mixing is even, compound;

B, above-mentioned compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1290-1400 ℃, fuse into uniform glass liquid;

C, use heat-resistance stainless steel water-cooled Continuous Roller milling train roll into the thick broken thin glass sheet of 0.5mm with glass metal;

D, again with the broken thin glass sheet of above-mentioned steps c gained, and the additive of low bulk property joins in the corundum jar ball mill according to certain ratio together, carries out mixing and ball milling and pulverizing, behind 400 mesh standard sieves, makes glass powder of the present invention.

In sum, beneficial effect of the present invention:

Glass powder is used in lead-silicon-aluminum passivation encapsulation provided by the invention, has good chemicalstability, good electric property; Dielectric strength is good, less passivation layer reverse leakage electric current, lower thermal expansivity; Have good matching and have lower firing temperature with the transistor silicon chip, its preparation method is simple and easy to do, good passivation effect; And have extremely low alkali metal ion content measured and good operational characteristic, possess high breakdown reverse and physical strength and thermal shock resistance.Be applicable to the passivation and the outline packages of silicon semiconductor power diode, fields such as the mesa passivation protection of silicon wafer.

Embodiment

Below in conjunction with embodiment the present invention is done and to further describe:

Embodiment 1

Take by weighing following each component by mass percentage

PbO 45% SiO 2 39.5%

B 2O 3 9.0% Al 2O 3 3.0%

Sb 2O 3 0.5% Bi 2O 3 3.0%。

Said components material thorough mixing is even, get compound; Compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1290 ℃, fuse into uniform glass liquid; Use heat-resistance stainless steel water-cooled Continuous Roller milling train that glass metal is rolled into the thick broken thin glass sheet of 0.5mm; Broken thin glass sheet with the above-mentioned steps gained joins in the corundum jar ball mill again; After carrying out ball mill pulverizing, through 400 mesh standard sieves, making its median size is 3.0 ± 0.5 μ m; Promptly get glass powder of the present invention, the thermal expansivity of wherein said glass powder is 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.

Embodiment 2

Take by weighing following each component by mass percentage

Said components material thorough mixing is even, get compound; Compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1350 ℃, fuse into uniform glass liquid; Use heat-resistance stainless steel water-cooled Continuous Roller milling train that glass metal is rolled into the thick broken thin glass sheet of 0.5mm; Broken thin glass sheet with the above-mentioned steps gained joins in the corundum jar ball mill again; After carrying out ball mill pulverizing, through 400 mesh standard sieves, making its median size is 3.0 ± 0.5 μ m; Promptly get glass powder of the present invention, the thermal expansivity of wherein said glass powder is 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.

Embodiment 3

Take by weighing following each component by mass percentage

Said components material thorough mixing is even, get compound; Compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1380 ℃, fuse into uniform glass liquid; Use heat-resistance stainless steel water-cooled Continuous Roller milling train that glass metal is rolled into the thick broken thin glass sheet of 0.5mm; The broken thin glass sheet of above-mentioned steps gained is joined in the corundum jar ball mill; Be that 8% addition adds the aluminium titanates additive by mass content again, the maximum particle diameter of this low bulk property additive agent powder is less than 10 μ m, after carrying out mixing and ball milling together and pulverizing; Through 400 mesh standard sieves; Making its median size is 3.0 ± 0.5 μ m, promptly gets glass powder of the present invention, and the thermal expansivity of wherein said glass powder is 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.

Embodiment 4

Take by weighing following each component by mass percentage

Said components material thorough mixing is even, get compound; Compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1380 ℃, fuse into uniform glass liquid; Use heat-resistance stainless steel water-cooled Continuous Roller milling train that glass metal is rolled into the thick broken thin glass sheet of 0.5mm; The broken thin glass sheet of above-mentioned steps gained is joined in the corundum jar ball mill; Be that 20% addition adds the trichroite additive by mass content again, the maximum particle diameter of this low bulk property additive agent powder is less than 10 μ m, after carrying out mixing and ball milling together and pulverizing; Through 400 mesh standard sieves; Making its median size is 3.0 ± 0.5 μ m, promptly gets glass powder of the present invention, and the thermal expansivity of wherein said glass powder is 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.

Glass powder among the embodiment 1-4 is carried out some fundamental property tests, and its test result is seen table 1:

The fundamental property table of table 1 glass powder

Claims (1)

1. the preparation method of a lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor is characterized in that: take by weighing following each component by mass percentage:
Said components material thorough mixing is even, get compound; Compound is joined in alumina crucible or the platinum crucible, insert crucible in the high temperature resistance furnace again, under 1350 ℃, fuse into uniform glass liquid; Use heat-resistance stainless steel water-cooled Continuous Roller milling train that glass metal is rolled into the thick broken thin glass sheet of 0.5mm; Broken thin glass sheet with the above-mentioned steps gained joins in the corundum jar ball mill again; After carrying out ball mill pulverizing, through 400 mesh standard sieves, making its median size is 3.0 ± 0.5 μ m; Promptly get described glass powder, the thermal expansivity of wherein said glass powder is 36-49 * 10 -7-1, its firing range is 700 ℃-800 ℃.
CN2009100406724A 2009-06-23 2009-06-23 Preparation of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor CN101585660B (en)

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CN101844867A (en) * 2010-05-19 2010-09-29 中国电子科技集团公司第四十三研究所 Glass powder applied to ceramic substrate and metal bonding layer and preparation method thereof
CN103046113B (en) * 2011-10-11 2015-04-15 中国科学院新疆理化技术研究所 Compound lead borate and nonlinear optical crystal of lead borate, preparation method thereof and purpose thereof
CN102775063A (en) * 2012-08-22 2012-11-14 中国科学院上海硅酸盐研究所 Lead-oxyfluoride-containing scintillation glass and preparation method thereof
CN107540229A (en) * 2017-09-05 2018-01-05 珠海彩珠实业有限公司 A kind of toughened vacuum glass glass powder with low melting point and preparation method thereof

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US4542105A (en) * 1982-01-21 1985-09-17 Tokyo Shibaura Denki Kabushiki Kaisha Glass composition for covering semiconductor element
EP1203757A1 (en) * 2000-11-01 2002-05-08 Asahi Glass Co., Ltd. Low melting point glass for covering electrodes, and plasma display device
CN1428304A (en) * 2001-12-25 2003-07-09 日本电气硝子株式会社 Low temp. sealing lead-containingless tin phosphate series glass and composite material using the same
CN1587147A (en) * 2004-07-30 2005-03-02 京东方科技集团股份有限公司 Low melting point, low expanding coefficient solder glass seal powder and its preparing method
US20060019813A1 (en) * 2004-07-23 2006-01-26 Nippon Sheet Glass Company, Limited Sealing glass composition, sealing glass frit, and sealing glass sheet
CN101298365A (en) * 2008-04-17 2008-11-05 东华大学 Preparation and use of electronic device passivation encapsulation modified zinc-boron-silicon-lead glass frit

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Publication number Priority date Publication date Assignee Title
US4542105A (en) * 1982-01-21 1985-09-17 Tokyo Shibaura Denki Kabushiki Kaisha Glass composition for covering semiconductor element
EP1203757A1 (en) * 2000-11-01 2002-05-08 Asahi Glass Co., Ltd. Low melting point glass for covering electrodes, and plasma display device
CN1428304A (en) * 2001-12-25 2003-07-09 日本电气硝子株式会社 Low temp. sealing lead-containingless tin phosphate series glass and composite material using the same
US20060019813A1 (en) * 2004-07-23 2006-01-26 Nippon Sheet Glass Company, Limited Sealing glass composition, sealing glass frit, and sealing glass sheet
CN1587147A (en) * 2004-07-30 2005-03-02 京东方科技集团股份有限公司 Low melting point, low expanding coefficient solder glass seal powder and its preparing method
CN101298365A (en) * 2008-04-17 2008-11-05 东华大学 Preparation and use of electronic device passivation encapsulation modified zinc-boron-silicon-lead glass frit

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JP特开2000-72473A 2000.03.07

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