CN101562218B - Method and device for attaching silicon nano particle film to surface of silicon solar cell - Google Patents

Method and device for attaching silicon nano particle film to surface of silicon solar cell Download PDF

Info

Publication number
CN101562218B
CN101562218B CN2009100979321A CN200910097932A CN101562218B CN 101562218 B CN101562218 B CN 101562218B CN 2009100979321 A CN2009100979321 A CN 2009100979321A CN 200910097932 A CN200910097932 A CN 200910097932A CN 101562218 B CN101562218 B CN 101562218B
Authority
CN
China
Prior art keywords
silicon
solar cell
silicon solar
nano
nano particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2009100979321A
Other languages
Chinese (zh)
Other versions
CN101562218A (en
Inventor
皮孝东
杨德仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhejiang University ZJU
Original Assignee
Zhejiang University ZJU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhejiang University ZJU filed Critical Zhejiang University ZJU
Priority to CN2009100979321A priority Critical patent/CN101562218B/en
Publication of CN101562218A publication Critical patent/CN101562218A/en
Application granted granted Critical
Publication of CN101562218B publication Critical patent/CN101562218B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a method for attaching a silicon nano particle film to the surface of a silicon solar cell, which makes silicon nano particles form silicon nano particle beams, scans the silicon nano particle beams and attaches the silicon nano particle beams to the surface of the silicon solar cell to form the uniform silicon nano particle film. The invention also discloses a device for preparing the film, which comprises a raw material cavity and a film-forming cavity, wherein the raw material cavity is provided with a spray hole which is communicated with the film-forming cavity; the film-forming cavity is connected with a vacuum system; a sample platform which is used for bearing the silicon solar cell and can move tridimensionally is arranged inside the film-forming cavity; and after the silicon nano particles enter the film-forming cavity in the form of the silicon nano particle beams from the spray hole of the raw material cavity, the sample platform drives the silicon solar cell to move, and the silicon nano particle film is formed on the surface of the silicon solar cell. The method can effectively control the film-forming speed of the silicon nano particles on thesurface of the silicon solar cell and the thickness and the uniformity of the obtained silicon nano particle film, can improve the efficiency of the silicon solar cell, and is favorable for reducing the cost of the silicon solar cell.

Description

Method and device at the surface of silicon solar cell attaching silicon nano particle film
Technical field
The present invention relates to field of photovoltaic materials, relate in particular to a kind of for improving the method and the device of silicon solar cell efficient at its surface attachment silicon nano particle film.
Background technology
Along with development of global economy, the consumption sharp increase of the energy.Current, most energy obtain by combustion of fossil fuels.The flood tide of fossil fuel uses the gaseous emissions such as great amount of carbon dioxide that caused causing serious day by day social environment problem.Therefore, the development and use of various regenerative resources have been subjected to the increasing attention of international community.In various regenerative resources, characteristics such as solar energy is inexhaustible, nexhaustible, pollution-free with it, facility become the object of giving priority to.The utilization of solar energy mainly comprises photo-thermal and photovoltaic two big classes, wherein succinct, long-life of photovoltaic generation, system efficient with it, maintenance is simple and enjoy favor, becomes the mainstream technology that solar energy utilizes.Under the policy of national governments supported, the global solar photovoltaic industry had kept rapid growth in the past 10 years.The photovoltaic industry has been considered to drive global economy and has developed one of topmost industry after microelectronic industry.
Core in the photovoltaic industry is a solar cell.At present, the solar cell more than 90% utilizes silicon materials manufacturing.The expensive of silicon solar cell is to hinder the basic reason that solar energy power generating is popularized in an all-round way.In order to reduce the cost of silicon solar cell, people generally take two approach.The one, the cost of manufacture of minimizing silicon solar cell mainly is the consumption that as far as possible reduces silicon materials; The 2nd, utilize new manufacture craft to improve the efficient of silicon solar cell.Not long ago, (Enhancement ofpolycrystalline silicon solar cells using ultrathin films of silicon nanoparticle such as Stupca, Applied Physics Letters 91,063107 (2007)) reported by covering silicon nano particle film at surface of silicon solar cell to improve the technology of silicon solar cell efficient.In their technology, nano silicon particles obtains by the electrochemical corrosion silicon chip, nano silicon particles is dispersed in the organic solvent subsequently, and they at surface of silicon solar cell, obtain silicon nano particle film to the gained drips of solution after the organic solvent volatilization then.Improved at the surface-coated silicon nano particle film behind efficiency that covered although they observe silicon solar cell, their technology is difficult to significantly reduce the cost of silicon solar cell.Its main cause is: (1) is low by the productive rate that the electrochemical corrosion silicon chip obtains nano silicon particles, the cost height; (2) mode that forms silicon nano particle film by drop nano silicon particles solution is not suitable for suitability for industrialized production.Obviously, in order to give full play to the improvement effect of silicon nano particle film, be necessary to develop new technology scheme based on nano silicon particles to silicon solar cell efficient.
Summary of the invention
The invention provides the low and technology of a kind of cost simply in the method for surface of silicon solar cell attaching silicon nano particle film.
A kind of method at the surface of silicon solar cell attaching silicon nano particle film makes nano silicon particles form the nano silicon particles bundle, and the nano silicon particles bundle scans and forms uniform silicon nano particle film attached to surface of silicon solar cell.
The main thought that makes nano silicon particles form the nano silicon particles bundle be drive nano silicon particles by a spray-hole or slit forming the nano silicon particles bundle, the air-flow that can utilize draught head to produce as for the mode that drives nano silicon particles.
The air pressure official post nano silicon particles that the present invention utilizes vacuum to produce sprays by a spray-hole and forms the nano silicon particles bundle, the draught head that vacuum produces drive the nano silicon particles cost low, be convenient to control, can not introduce other impurity.
For guarantee the nano silicon particles bundle by and be convenient to control flow, the spray-hole aperture is preferably 0.5~6mm.Spray-hole is its diameter of aperture when circular, and when spray-hole was other shapes, its minor face also should be in 0.5~6mm scope.
Described silicon solar cell (before the attaching silicon nano particle film) can be the various silicon solar cells that utilize existing current techique to make, and generally its surface is metal electrode of the grating and antireflective coating.
In order to form uniform silicon nano particle film at surface of silicon solar cell, during nano silicon particles bundle scanning (process of spraying and contacting, adhering to) surface of silicon solar cell with surface of silicon solar cell, make the everywhere of surface of silicon solar cell all receive the scanning of nano silicon particles bundle by mobile silicon solar cell, could form the uniform silicon nano particle film of thickness.
The thickness of described silicon nano particle film is the 2-100 nanometer, and thickness can get by calculating nano silicon particles flow and sweep time, also can pass through the checkout equipment On-line Control.
In order to make the nano silicon particles can be attached to surface of silicon solar cell, and have excellent performance, the average-size of described nano silicon particles is the 1-10 nanometer, and the standard deviation of nano silicon particles distribution of sizes is less than 20% of average-size.
The draught head that adopts vacuum to produce drives nano silicon particles, makes the vacuum degree difference of spray-hole both sides, and the pressure that spray-hole exports a side is generally less than 50Pa, and the pressure of import one side is at least 10 times of outlet one side.In order to guarantee the nano silicon particles bundle along set direction contact silicon solar cell surface, the distance of described surface of silicon solar cell and spray-hole can not be too big, general 1-5cm.Nano silicon particles has utmost point supersonic velocity when arriving surface of silicon solar cell, they are by inertial collision and attached to surface of silicon solar cell.
Nano silicon particles of the present invention can be by various art methods preparations, and for example thermal decomposition of silane and silane plasma decomposes also can be utilized commercially available nano silicon particles.The average-size of nano silicon particles is the 1-10 nanometer, and the standard deviation of nano silicon particles distribution of sizes is less than 20% of average-size.The cross section of nano silicon particles bundle is circular, square or rectangle.
In order to realize the inventive method, the present invention also provides a kind of device at the surface of silicon solar cell attaching silicon nano particle film, comprise and be used to hold or prepare the raw material chamber of nano silicon particles and be used to place the film forming chamber of silicon solar cell, described raw material chamber has the spray-hole that communicates with film forming chamber, the film forming chamber bottom is provided with the vacuum line that is used to connect vacuum system, be provided with in the film forming chamber be used to carry silicon solar cell can the three-dimensional sample stage that moves, after nano silicon particles enters film forming chamber from the spray-hole in raw material chamber with nano silicon particles bundle form, sample stage drives silicon solar cell and moves, and makes the scanning of nano silicon particles bundle and forms uniform silicon nano particle film attached to surface of silicon solar cell.
If utilize ready-made nano silicon particles, the raw material chamber can be a simple container so, is used to hold nano silicon particles.
If form silicon nano particle film at surface of silicon solar cell in the preparation nano silicon particles, the raw material chamber can be the device of a preparation nano silicon particles so, and the preparation nano silicon particles can adopt art methods and device.
For example described raw material chamber is the tubular housing that has air inlet pipeline, and its periphery is provided with the electromagnetic field of high frequency emitter, makes the unstrpped gas that enters in the raw material chamber generation nano silicon particles that is stimulated.
The shape of the spray-hole in raw material chamber is circular, square or rectangle, and the cross section of nano silicon particles formed nano silicon particles bundle after small holes also presents corresponding shape.
Described film forming chamber can be made with metal (as stainless steel) or other materials.
In film forming chamber, the surface places on the sample stage with 3 D auto degree for the silicon solar cell of metal electrode of the grating and antireflective coating.Regulate the height of sample stage, make silicon solar cell near spray-hole, mobile example platform on the both direction of horizontal plane is realized the scanning of nano silicon particles bundle to whole surface of silicon solar cell then.The thickness that finally covers the silicon nano particle film of surface of silicon solar cell is the 2-100 nanometer.
Sample stage can adopt all kinds of electronic or three-dimensional mobile and automatic controls of pneumatic means realization in the prior art.
The inventive method increases a step that covers silicon nano particle film at surface of silicon solar cell again to improve the efficient of silicon solar cell after finishing traditional silicon solar cell manufacture craft.
The inventive method can be controlled thickness and the uniformity of nano silicon particles at the film forming speed and the gained silicon nano particle film of surface of silicon solar cell effectively.This is very beneficial for guaranteeing consistency of product in process of production.The present invention can improve 1% to the efficient of silicon solar cell at least, helps the reduction of silicon solar cell cost.
Description of drawings
Fig. 1 is used for structural representation at the device of surface of silicon solar cell attaching silicon nano particle film for the present invention, and the raw material chamber is the device of preparation nano silicon particles among the figure.
Embodiment
Embodiment 1
As shown in Figure 1, the present invention is used for comprising the film forming chamber 6 that is used to prepare the raw material chamber of nano silicon particles and is used to place silicon solar cell at the device of surface of silicon solar cell attaching silicon nano particle film, the raw material chamber is the tubulose plasma chamber 2 (quartz ampoule) that has air inlet pipeline 1, and air inlet pipeline 1 interconnects by stainless steel adapting piece 3 with plasma chamber 2.
Plasma chamber 2 peripheries are provided with electromagnetic field of high frequency emitter (not shown), the unstrpped gas that enters in the plasma chamber 2 is stimulated generates nano silicon particles 4.
Plasma chamber 2 has the spray-hole that communicates with film forming chamber 6, film forming chamber 6 bottoms are provided with the vacuum line 9 that is used to connect vacuum system, be provided with in the film forming chamber 6 be used to carry silicon solar cell 7 can the three-dimensional sample stage 8 that moves, plasma chamber 2 also interconnects by stainless steel adapting piece 3 with film forming chamber 6.
Silane, argon gas and hydrogen are mixed after admission line 1 enters plasma chamber 2.Mist forms plasma under the exciting of 13.56MHz radio-frequency power supply, nano silicon particles 4 produces in plasma, and its average-size is 3.1nm, and the standard deviation of distribution of sizes is 0.5nm.The pressure that plasma chamber is 2 li is 300Pa.Nano silicon particles 4 form with nano silicon particles bundle 5 after the diameter through plasma chamber 2 bottoms is the spray-hole (circular hole) of 4.5mm enters in the stainless steel film forming chamber 6 that pressure is 20Pa.
The surface places on the sample stage 8 of 6 li of film forming chambers for the silicon solar cell 7 of metal electrode of the grating and antireflection layer.The vacuum of whole system vacuumizes by vacuum pump and realizes.Vacuum pump communicates with film forming chamber 6 by vacuum line 9.
By regulating the height of sample stage 8, silicon solar cell 7 is 1cm with the distance of the spray-hole of plasma chamber 2 bottoms.Mobile example platform 8 on X in the horizontal plane and Y direction, it is the silicon nano particle film of 11nm that the surface of last silicon solar cell 7 forms layer of even thickness.By the measurement of silicon solar cell efficient is learnt, surface coverage behind the silicon nano particle film efficient of silicon solar cell improved 2.1%.
Embodiment 2
Adopt the device of embodiment 1, silane, argon gas and hydrogen mix after admission line 1 enters plasma chamber 2.Mist forms plasma under the exciting of 13.56MHz radio-frequency power supply, nano silicon particles 4 produces in plasma, and its average-size is 5.3nm, and the standard deviation of distribution of sizes is 0.7nm.The pressure that plasma chamber is 2 li is 450Pa.Nano silicon particles 4 form with nano silicon particles bundle 5 after the diameter through plasma chamber 2 bottoms is the spray-hole (circular hole) of 2mm enters in the stainless steel film forming chamber 6 that pressure is 4Pa.
The surface places on the sample stage 8 of 6 li of film forming chambers for the silicon solar cell 7 of metal electrode of the grating and antireflection layer.The vacuum of whole system vacuumizes by vacuum pump and realizes.Vacuum pump communicates with film forming chamber 6 by vacuum line 9.
By regulating the height of sample stage 8, silicon solar cell 7 is 3cm with the distance of the spray-hole of plasma chamber 2 bottoms.Mobile example platform 8 on X in the horizontal plane and Y direction, it is the silicon nano particle film of 50nm that the surface of last silicon solar cell 7 forms layer of even thickness.By the measurement of silicon solar cell efficient is learnt, surface coverage behind the silicon nano particle film efficient of silicon solar cell improved 1.6%.
Embodiment 3
Adopt the device of embodiment 1, silane, argon gas and hydrogen mix after admission line 1 enters plasma chamber 2.Mist forms plasma under the exciting of 13.56MHz radio-frequency power supply, nano silicon particles 4 produces in plasma, and its average-size is 8.2nm, and the standard deviation of distribution of sizes is 1.1nm.The pressure that plasma chamber is 2 li is 1060Pa.Nano silicon particles 4 form with nano silicon particles bundle 5 after the diameter through plasma chamber 2 bottoms is the spray-hole (circular hole) of 1mm enters in the stainless steel film forming chamber 6 that pressure is 0.3Pa.
The surface places on the sample stage 8 of 6 li of film forming chambers for the silicon solar cell 7 of metal electrode of the grating and antireflection layer.The vacuum of whole system vacuumizes by vacuum pump and realizes.Vacuum pump communicates with film forming chamber 6 by vacuum line 9.
By regulating the height of sample stage 8, silicon solar cell 7 is 4cm with the distance of the spray-hole of plasma chamber 2 bottoms.Mobile example platform 8 on X in the horizontal plane and Y direction, it is the silicon nano particle film of 90nm that the surface of last silicon solar cell 7 forms layer of even thickness.By the measurement of silicon solar cell efficient is learnt, surface coverage behind the silicon nano particle film efficient of silicon solar cell improved 1.2%.

Claims (8)

1. method at the surface of silicon solar cell attaching silicon nano particle film, it is characterized in that: the air pressure official post nano silicon particles that utilizes vacuum to produce sprays by a spray-hole and forms the nano silicon particles bundle, and the nano silicon particles bundle scans and forms uniform silicon nano particle film attached to surface of silicon solar cell.
2. the method for claim 1, it is characterized in that: described spray-hole aperture is 0.5~6mm.
3. the method for claim 1, it is characterized in that: described surface of silicon solar cell is metal electrode of the grating and antireflective coating, during nano silicon particles bundle scanning surface of silicon solar cell, make the nano silicon particles bundle evenly scan surface of silicon solar cell by mobile silicon solar cell.
4. the method for claim 1, it is characterized in that: the thickness of described silicon nano particle film is the 2-100 nanometer.
5. the method for claim 1, it is characterized in that: the average-size of described nano silicon particles is the 1-10 nanometer, and the standard deviation of nano silicon particles distribution of sizes is less than 20% of average-size.
6. method as claimed in claim 2 is characterized in that: the distance of described surface of silicon solar cell and spray-hole is 1~5cm.
7. device at the surface of silicon solar cell attaching silicon nano particle film, comprise and be used to hold or prepare the raw material chamber of nano silicon particles and be used to place the film forming chamber of silicon solar cell, it is characterized in that: described raw material chamber has the spray-hole that communicates with film forming chamber, the film forming chamber bottom is provided with the vacuum line that is used to connect vacuum system, be provided with in the film forming chamber be used to carry silicon solar cell can the three-dimensional sample stage that moves, after nano silicon particles enters film forming chamber from the spray-hole in raw material chamber with nano silicon particles bundle form, sample stage drives silicon solar cell and moves, and makes the scanning of nano silicon particles bundle and forms uniform silicon nano particle film attached to surface of silicon solar cell.
8. device as claimed in claim 7 is characterized in that: described raw material chamber is the tubular housing that has air inlet pipeline, and its periphery is provided with the electromagnetic field of high frequency emitter, makes the unstrpped gas that enters in the raw material chamber generation nano silicon particles that is stimulated.
CN2009100979321A 2009-04-23 2009-04-23 Method and device for attaching silicon nano particle film to surface of silicon solar cell Active CN101562218B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2009100979321A CN101562218B (en) 2009-04-23 2009-04-23 Method and device for attaching silicon nano particle film to surface of silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2009100979321A CN101562218B (en) 2009-04-23 2009-04-23 Method and device for attaching silicon nano particle film to surface of silicon solar cell

Publications (2)

Publication Number Publication Date
CN101562218A CN101562218A (en) 2009-10-21
CN101562218B true CN101562218B (en) 2010-11-17

Family

ID=41220926

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009100979321A Active CN101562218B (en) 2009-04-23 2009-04-23 Method and device for attaching silicon nano particle film to surface of silicon solar cell

Country Status (1)

Country Link
CN (1) CN101562218B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102190288A (en) * 2010-03-07 2011-09-21 张镜 Technology (direct method) for processing nano particles on surface of object
CN113008622B (en) * 2021-03-09 2022-07-26 亚洲硅业(青海)股份有限公司 Particle silicon area melting detection sampling device

Also Published As

Publication number Publication date
CN101562218A (en) 2009-10-21

Similar Documents

Publication Publication Date Title
Leng et al. Advances in nanostructures fabricated via spray pyrolysis and their applications in energy storage and conversion
CN102677022B (en) Atomic layer deposition device
CN103915613B (en) Hydrothermal reaction coupling spray pyrolysis MnO2The preparation method of/Graphene electrodes material
CN105349970B (en) A kind of electric thin preparation method of excellent performance
CN104409702A (en) Preparation method of N-doped coated graphene micron silicon composite material
CN105226297B (en) A kind of preparation method of classifying porous air electrode
CN103311511B (en) Preparation method of nanometer silicon composite material with core-shell structure
CN103490047A (en) Method for preparing three-dimensional hole carbon/nano NiO composite
CN106128772B (en) A kind of preparation method of vulcanized lead quantum dot photovoltaic battery
CN106356546A (en) Preparation method of phosphoric acid-doped layer by layer self-assembly polymer composite film
CN101562218B (en) Method and device for attaching silicon nano particle film to surface of silicon solar cell
CN106601836A (en) Technology for manufacturing light trapping structure in surface of photovoltaic cell based on nano-particles
CN102732852A (en) Silicon nitride film preparation device
CN108075120B (en) Preparation method of spherical lithium titanate material
CN103754856B (en) A kind of preparation method of anode material for lithium ion battery cobalt phosphate lithium
CN102656707B (en) Thin-film silicon tandem solar cell and method for manufacturing the same
CN104404565B (en) Au/TiO2optoelectronic pole of nanotube composite construction and preparation method thereof
CN102456928A (en) Spray pyrolysis battery manufacturing method of double-layer film all-solid-state film lithium battery
KR102118656B1 (en) Apparatus for Rapid Dye Adsorpting based on Inertial Impacting of Aerosol Droplets and Method for Fabricating of Dye Sensitized Solar Cells Using the Same
CN106848064A (en) High stability perovskite solar cell and preparation method based on titanium dioxide indium sulphur quantum dot core shell structure
CN110952073A (en) Thin layer SiO2Preparation method of passivation film and prepared battery
CN102666905A (en) Process and apparatus for producing a substrate
CN114349011B (en) Preparation method of nano-sized silicon monoxide powder
CN110176542A (en) Perovskite battery Organic-inorganic composite hole transport film and preparation method thereof
CN109728298A (en) A kind of silicon substrate high-performance dynamic lithium battery group and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant