CN101546112B - Method for replacing mask - Google Patents

Method for replacing mask Download PDF

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Publication number
CN101546112B
CN101546112B CN 200810035089 CN200810035089A CN101546112B CN 101546112 B CN101546112 B CN 101546112B CN 200810035089 CN200810035089 CN 200810035089 CN 200810035089 A CN200810035089 A CN 200810035089A CN 101546112 B CN101546112 B CN 101546112B
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mask
novel
old
method
defects
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CN 200810035089
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Chinese (zh)
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CN101546112A (en )
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朱文渊
杨晓松
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中芯国际集成电路制造(上海)有限公司
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Abstract

The invention provides a method for replacing a mask for improving the yield of a novel mask replaced by an old mask for exposure. The method comprises the following steps: firstly, manufacturing a wafer for alternant exposure of the novel mask and the old mask; and secondly, scanning adjacent crystal grains on the wafer to look for defects, and judging whether the defects are within an error threshold value or not, if so, putting the novel mask into use, and otherwise, abandoning the novel mask, manufacturing another piece of novel mask and performing the same flow on the another manufactured novel mask. The method can find out the difference between the novel mask and the old mask during scanning the adjacent crystal grains by carrying out the alternant exposure of the novel mask and the old mask on the same wafer so as to find out the defects of the novel mask relative to the old mask or the defects of the old mask, and solve the problem that the matching degree of the novel mask and the old mask cannot be accurately judged by a conventional replacing method.

Description

一种更替掩模版的方法 One kind of reticle replacement method

技术领域 FIELD

[0001] 本发明涉及半导体曝光制程中掩模版领域,尤其涉及一种新掩模版更替旧掩模版的方法。 [0001] The present invention relates to a semiconductor exposure reticle manufacturing process, and more particularly relates to a novel reticle reticle replacement of the old method.

背景技术 Background technique

[0002] 随着曝光制程的特征尺寸(Critical Dimension : CD)的不断缩小,曝光制程对掩 [0002] As the feature size of the exposure process (Critical Dimension: CD) shrinking, to mask exposure process

模版的变化极为敏感。 It is extremely sensitive to changes in the template. 掩模版的质量也直接决定着曝光良率。 Reticle quality directly determines the exposure yield. 随着曝光晶圆量的增加, 掩模版表面容易产生雾状缺陷(Haze defect)。 With the increase of the amount of exposure of the wafer, reticle surface prone to haze (Haze defect). 而此雾状缺陷直接影响着曝光晶圆的成品率。 And this haze a direct impact on the yield of the exposure of the wafer. 为避免此雾状缺陷对曝光晶圆的影响,通常会把产生雾状缺陷的掩模版进行再清洗。 To avoid the impact of this haze on the wafer is exposed, haze will usually produce re-cleaning of the reticle. 然而这种再清洗会不断减薄掩模版的厚度,减小掩模版的使用寿命,对于相移掩模版(Phase shifting Mask : PSM)还会改变其相角,产生相角偏移的问题,从而影响整个曝光制程线。 However, such cleaning will then continue thinning a thickness of the reticle, the reticle is reduced life for a phase shift reticle (Phase shifting Mask: PSM) also changes its phase angle, the phase angle shift problems, thereby Effect of the entire exposure process line. 因此,对于重要的掩模版,通常会同时准备好几个相同的掩模版作为备用, 或者直接制作与旧掩模版匹配的新掩模版。 So, for important reticle, often several at the same time prepare the same mask as a backup, or directly create a new version with the old mask reticle match.

[0003] 曝光制程是将掩模版上图案曝在晶圆上,通常是将掩模版的图案多次的曝满整个晶圆,每次都成一个方格(shot)曝在晶圆上,每个方格上都有若干个小晶粒(die)。 [0003] The exposure process is exposing the reticle pattern on the wafer, typically a pattern of the reticle is exposed over the entire wafer multiple times, each time into a box (SHOT) exposed on a wafer, each the squares have a number of small grains (die). 传统更替掩模版的做法是,先对用新掩模版曝的晶圆上的小晶粒进行相邻小晶粒的缺陷扫描,如果此缺陷在不影响曝光质量下,即在误差阈值内,那么新掩模在质量上合格。 Traditional practice is the replacement reticle, defects first scan adjacent new small grains with a small grain exposed reticle on a wafer, if this defect does not affect the quality of exposure, i.e. within the error threshold, then the new mask is qualified in terms of quality. 通常为评估新掩模版是否能完全替换旧掩模版进行曝光,还需要辅助采集新掩模版曝光的工艺窗口、焦深、特征尺寸大小和特征尺寸的均勻性来判断。 Exposure is generally carried out to assess whether the new reticle reticle completely replace the old, but also acquires a new auxiliary reticle exposure process window, the depth of focus, the size and uniformity of the feature to determine the feature size. 然而采用这种方法来进行新旧掩模版之间的更替,并没有对新旧掩模版的匹配作评估,也就是无法确定新掩模版能否完全替代旧掩模版进行曝光。 However, using this approach to replacement between old and new mask, did not make an assessment of the old and new version of the matching mask, which is unable to determine whether the new version completely replace the old mask reticle for exposure. 那么新旧掩模版更替产生的误差和缺陷以及光学近阶效应偏差(OPCbias)只有在新掩模版曝光出的晶圆后续的电性(WAT)和良率测试中被检测到。 Then the replacement of old and new reticle errors and defects and to generate an optical effect near-order deviation (OPCbias) only subsequent to the wafer is detected electrically (WAT) in a new reticle exposure tests and yield. 这样就潜在地降低了应用新掩模版进行曝光的曝光制程的良率。 Thus potentially reducing the yield of the application of new exposure process for exposing the reticle.

发明内容 SUMMARY

[0004] 本发明的目的在于提供一种更替掩模版的方法,以解决传统更替掩模版时无法准确确认新旧掩模版匹配的问题,解决因新旧掩模版替换产生的误差和缺陷导致应用新掩模版进行曝光的曝光制程的良率下降的问题。 [0004] The object of the present invention is to provide a reticle alternate approach to solve the problem can not accurately confirm the new and conventional reticle replacement when matched reticle, address errors, and defects due to the old and new generation of reticle replacement results in the application of new reticle an exposure process of exposing the yield decreased.

[0005] 为达到上述目的,本发明的更替掩模版的方法,应用新掩模版替换旧掩模版, 新掩模版和旧掩模版的图案可成方格曝满整个晶圆,每个方格为若干小晶粒组成。 [0005] To achieve the above object, the reticle replacement method of the present invention, the application of new reticle reticle replace the old, new and old reticle of reticle pattern can be exposed over the entire wafer into squares, each square is several small grains. 该方法包括以下步骤:步骤1:将新掩模版和旧掩模版曝成交替方格,曝在同一片晶圆上; 步骤2:对步骤1曝在晶圆上方格的小晶粒进行相邻小晶粒的缺陷扫描;步骤3:采集步骤2的相邻小晶粒缺陷扫描数据,判断小晶粒的缺陷是否在误差阈值内,如果是执行步骤4,如果不是执行步骤5;步骤4:新掩模版可替代旧掩模版进行使用;步骤5:舍弃新掩模版,另外制作一块新掩模版并开始步骤1。 The method comprises the following steps: Step 1: old and new reticle into the reticle exposure alternating squares in the same exposure on a wafer; Step 2: Step 1 of the exposure on the wafer squares small grain phase defect scanning neighboring small grains; step 3: step 2 adjacent small crystal defect gathering scan data, it is determined whether the small crystal defects within the error threshold value, if the step 4 is performed, if not step 5; step 4 : new reticle may be used to replace the old reticle; step 5: discard new reticle, an additional production step and begin a new reticle 1. 进一步地,步骤1中,新掩模版和旧掩模版曝成的交替方格呈国际棋盘方格交替排列方式曝在同一片晶圆上。 Furthermore, in step 1, the old and the new reticle into the reticle exposed alternately International checkerboard squares were exposed alternately arranged in the same way on a wafer. 或者,步骤1中,新掩模版和旧掩模版曝成的交替方格是呈一列新掩模版曝的方格和一列旧掩模版曝的方格交替排列方式曝在同一片晶圆上。 Alternatively, the step, the old and the new reticle reticle 1 is exposed to alternating squares form a new reticle exposed squares and a reticle exposing old squares are alternately arranged in the same manner as an exposure on the wafer. 步骤2中相邻小晶粒为横向相邻的小晶粒。 Step 2 adjacent small grain laterally adjacent small grains.

[0006] 与现有更替掩模版的方法相比,本发明的更替掩模版的方法,通过将新旧掩模版呈交替方格排列形式曝在同一片晶圆上,这样在对相邻的小晶粒进行缺陷扫描时,实际不仅将新旧掩模版自身方格内的相邻小晶粒进行了扫描,同时将新旧掩模版分别曝的相邻小晶粒进行了缺陷扫描。 [0006] Compared with the conventional reticle replacement method, the replacement method of the present invention, a reticle, the reticle by the old and the new are alternately arranged in checkered form in the same exposure on a wafer, so that the adjacent small crystal of when the grain defect scanning, only the actual reticle itself new and small crystal grains in the adjacent grid was scanned while the old and new reticle are exposed adjacent small crystal defects were scanned. 这样不仅容易查出新掩模版自身的缺陷,同时可查出新旧掩模版之间误差缺陷,准确确认新旧掩模版之间匹配度,解决因新旧掩模版替换产生的误差和缺陷导致应用新掩模版进行曝光的曝光制程的良率下降的问题。 This is not only easy to detect defects in new reticle itself, and can detect an error between the new reticle defects, confirm the accuracy of the matching between the new reticle, address errors, and defects due to the old and new generation of reticle replacement results in the application of new reticle an exposure process of exposing the yield decreased.

附图说明 BRIEF DESCRIPTION

[0007] 以下结合附图和具体实施例对本发明的更替掩模版的方法作进一步详细具体的描述。 [0007] The following Examples in conjunction with the accompanying drawings and the specific embodiments described in detail further on reticle replacement method of the present invention.

[0008] 图1是本发明中新旧掩模版交替曝光在晶圆上的排列方式示意图。 [0008] FIG. 1 is a reticle of the present invention the new and old alternately exposed on the schematic arrangement of a wafer.

[0009] 图2是本发明中新旧掩模版交替曝光在晶圆上的另一种排列方式示意图。 [0009] FIG. 2 is a schematic diagram of the present invention, the old and new reticle on the wafer alternately exposing another arrangement.

[0010] 图3是图1和图2所示晶圆上方格内部示意图。 [0010] FIG. 3 is a schematic diagram of the internal square wafer shown in FIG. 2 and FIG.

[0011] 图4是本发明更替掩模版流程示意图。 [0011] FIG. 4 is a schematic flow diagram of reticle replacement of the present invention.

具体实施方式 detailed description

[0012] 本发明的更替掩模版的方法,请参阅图1的步骤1 :将新掩模版和旧掩模版曝成交替方格1和2,曝在同一片晶圆3上。 [0012] The reticle replacement method of the present invention, see FIG. 1 Step 1: old and new reticle to alternately exposed reticle box 1 and 2, the same exposure on the wafer 3 a. 如图1所示的新掩模版和旧掩模版曝成的交替方格1和2呈国际棋盘方格交替排列方式曝在同一片晶圆3上。 FIG old and new reticle reticle shown alternately exposed to the box 1 and 2 were alternately international checkerboard arrangement exposed on the wafer with a 3. 或者如图2所示,新掩模版和旧掩模版曝成的交替方格是呈一列新掩模版曝的方格1和一列旧掩模版曝的方格2交替排列方式曝在同一片晶圆3上。 Alternatively, as shown in FIG. 2, the old and the new reticle reticle is exposed to alternating squares form a square grid 1 and 2 are alternately arranged in a manner old exposure reticle new reticle is exposed in the exposure of the wafer with a 3. 步骤2:对步骤1曝在晶圆上方格的小晶粒进行相邻小晶粒的缺陷扫描。 Step 2: a step of exposing a small die on a wafer defect scanning adjacent squares small grains. 请参见图3,无论是新掩模版曝的方格1或旧掩模版曝的方格2,它们内部均是由若干个相同的小晶粒11和21组成。 Referring to FIG. 3, both new and old exposure reticle reticle exposure grid squares 1 or 2, inside them they are composed of several identical small crystal composition 11 and 21. 步骤2中相邻小晶粒为横向相邻的小晶粒,例如小晶粒13和小晶粒21。 Step 2 adjacent small grain laterally adjacent small grains, such as small and small crystal grains 13 21. 由于受扫描装置的限制,只能进行横向相邻小晶粒的扫描,因此对应于步骤1中新掩模版和旧掩模版曝成的交替方格排列图案局限于新掩模版曝的方格1和旧掩模版曝的方格2需呈横向交替排列方式。 Due to the limitation by the scanning means, for scanning laterally adjacent only small grains, thus alternating square array pattern corresponding to the Step 1 of the old and new reticle into the reticle exposure is limited to new reticle exposed squares 1 old reticle and exposed squares 2 arranged alternately transversely required manner. 这样的方格排列方式可在进行横向相邻小晶粒扫描时,对新掩模版和旧掩模版曝的两个相邻的小晶粒,例如13和21 进行相邻小晶粒的扫描,查出新旧掩模版之间的误差和缺陷。 When such a square arrangement can be performed laterally adjacent small grain scanning, new and old reticle reticle exposing two adjacent small grains, such as 13 and 21 scan adjacent small grains, to detect errors and defects between the old and the new reticle. 因此,根据不同的扫描装置,即步骤2中相邻小晶粒的扫描方式不同,步骤1中新掩模版曝的方格1和旧掩模版曝的方格2并不局限于图1和图2所示的方格排列方式。 Thus, according to different adjacent scanning means, i.e., step 2 of different scanning small grains, step 1 exposure squares new reticle 1 and reticle old exposed squares 1 and 2 is not limited to that illustrated in FIG. square arrangement shown in Figure 2. 例如,当步骤2中相邻小晶粒为纵向相邻小晶粒的扫描,这样就会要求步骤1中新掩模版曝的方格和旧掩模版曝的方格需呈纵向交替排列,那么图1所示的方格排列方式仍然适用,而另外一种排列方式可为新掩模版曝的一行方格和旧掩模版曝的一行方格交错排列。 For example, when the small grains are alternately arranged longitudinally in adjacent scan Step 2 longitudinally adjacent small grains, such as a new step will be required exposure of the reticle and exposure grid squares for an old reticle 1, then grid arrangement shown in FIG. 1 still apply, but another arrangement may be exposed to a new row of squares reticle and reticle exposed old row staggered grid. 步骤3 :采集步骤2的相邻小晶粒缺陷扫描数据,判断小晶粒的缺陷是否在误差阈值内,如果是执行步骤4,如果不是执行步骤5。 Step 3: Step 2 adjacent small crystal defect gathering scan data, it is determined whether a defect in the small grains error threshold value, if the step 4 is performed, if not step 5 is performed. 对于一定工艺条件的曝光制程,对掩模版存在的误差和缺陷是有一个阈值范围的,当误差或缺陷在这个阈值范围内时,该掩模版对曝光制程的良率影响甚微,因此可忽略,也就是执行步骤4:新掩模版可替代旧掩模版进行使用。 For the exposure process certain process conditions, for the presence of the reticle errors and defects being a threshold range, when the error or defect within the threshold range, the yield of the impact of the reticle to the exposure process is minimal, and therefore can be ignored , that is, perform step 4: The new version can replace the old mask reticle for use. 如果扫描查出的误差和缺陷不在这个阈值范围内,则执行步骤5:舍弃新掩模版,另外制作一块新掩模版并开始步骤1,进入新的一轮检测扫描。 If the scanning does not detect errors and defects within the threshold range, then step 5: discard new reticle, an additional production step and begin a new reticle 1 into a new detection scan. 整个更替掩模版的流程图请参阅图4。 Replacement of the entire reticle flowchart see Figure 4. 简要地说,先制作新旧掩模版交替曝光的晶圆,然后进行晶圆上相邻小晶粒扫描,查找缺陷, 并判断缺陷是否在其缺陷阈值内,如果是,则新掩模版可投入使用;如果不是,舍弃新掩模版,另外制作一块新掩模版,对制作的另外一块新掩模版开始同样的流程。 Briefly, first make the old and new reticle alternately exposed wafer, then the wafer adjacent small grain scan, to find the defect, and determines whether the defect in its defect threshold, if yes, a new reticle may be put to use ; if not, discard new mask, another mask to make a new version, in addition to a new mask to start the same process of production. [0013] 本发明的更替掩模版的方法,通过将新旧掩模版交替曝光在同一晶圆上,在进行相邻小晶粒缺陷扫描时,不仅可对新掩模版自身的相邻小晶粒进行扫描而且还可以对新掩模版和旧掩模版制作的相邻小晶粒进行扫描,找出新旧掩模版的差异之处及缺陷, 克服传统更替方法中不能准确确认新旧掩模版之间匹配度的问题,解决因新旧掩模版替换旧掩模版产生的误差和缺陷导致应用新掩模版进行曝光的曝光制程的良率下降的问题。 [0013] The reticle replacement method of the present invention, when the old and the new reticle by alternately exposed on the same wafer, during the scanning of adjacent small crystal defects, can be not only the new reticle itself adjacent small grain scanning and can also scan the adjacent small grains new reticle and the old mask made to find out the difference of the old and new at the reticle and defects, replacement overcome the traditional methods can not accurately confirm the degree of match between the old and new reticle solve problems due to errors and replacing the old reticle defects generated reticle old and new applications results in new reticle for an exposure process yields drop.

Claims (4)

  1. 1.一种更替掩模版的方法,应用新掩模版替换旧掩模版,所述新掩模版和旧掩模版的图案成方格曝满整个晶圆,每个方格为若干小晶粒组成,其特征在于,该方法包括以下步骤:步骤1:将新掩模版和旧掩模版曝成交替方格,曝在同一片晶圆上;步骤2 :对步骤1曝在晶圆上方格的小晶粒进行相邻小晶粒的缺陷扫描;步骤3:采集步骤2的相邻小晶粒缺陷扫描数据,判断小晶粒的缺陷是否在误差阈值内,如果是执行步骤4,如果不是执行步骤5;步骤4:新掩模版可替代旧掩模版进行使用;步骤5 :舍弃新掩模版,另外制作一块新掩模版并开始步骤1。 A method of reticle replacement, replacing the old application of new reticle reticle, the reticle and the old new reticle in a checkered pattern over the entire exposed wafer, each square into small grains, characterized in that the method comprises the following steps: step 1: old and new reticle into the reticle exposure alternating squares in the same exposure on a wafer; step 2: 1 small squares on the wafer exposure step crystal grains of small grain defects adjacent scan; step 3: 2 acquisition step adjacent small crystal defect scan data, it is determined whether a defect in the small grains error threshold value, if the step 4 is performed, if not step 5; step 4: the old new reticle may alternatively be used reticle; step 5: discard new reticle, an additional production step and begin a new reticle 1.
  2. 2.如权利要求1所述更替掩模版的方法,其特征在于,所述步骤1中,新掩模版和旧掩模版曝成的交替方格呈国际棋盘方格交替排列方式曝在同一片晶圆上。 2. The method of replacement of the reticle as claimed in claim 1, wherein, in the step 1 was, the old and the new reticle into the reticle exposed alternately international checkerboard squares are alternately arranged in the same manner as an exposed crystal circle.
  3. 3.如权利要求1所述更替掩模版的方法,其特征在于,所述步骤1中,新掩模版和旧掩模版曝成的交替方格是呈一列新掩模版曝的方格和一列旧掩模版曝的方格交替排列方式曝在同一片晶圆上。 3. The method of replacement of the reticle as claimed in claim 1, wherein, in the step 1, the old and the new reticle reticle is exposed to alternating squares form a new reticle exposed squares and a legacy reticle exposed squares are alternately arranged in the same manner as an exposure on the wafer.
  4. 4.如权利要求1所述更替掩模版的方法,其特征在于,所述步骤2中相邻小晶粒为横向相邻的小晶粒。 4. The method of replacement of the reticle as claimed in claim 1, wherein the small grains are laterally adjacent small grains adjacent to the step 2.
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CN102253595B (en) * 2010-05-20 2013-04-10 北大方正集团有限公司 Method for searching defective mask plate
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