CN101526707A - Tft-lcd阵列基板结构及其制造方法 - Google Patents
Tft-lcd阵列基板结构及其制造方法 Download PDFInfo
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- CN101526707A CN101526707A CN200810101545A CN200810101545A CN101526707A CN 101526707 A CN101526707 A CN 101526707A CN 200810101545 A CN200810101545 A CN 200810101545A CN 200810101545 A CN200810101545 A CN 200810101545A CN 101526707 A CN101526707 A CN 101526707A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000004065 semiconductor Substances 0.000 claims abstract description 172
- 239000000203 mixture Substances 0.000 claims abstract description 120
- 238000000034 method Methods 0.000 claims abstract description 91
- 239000002184 metal Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 85
- 238000002161 passivation Methods 0.000 claims abstract description 67
- 238000005516 engineering process Methods 0.000 claims description 143
- 238000005530 etching Methods 0.000 claims description 127
- 239000000758 substrate Substances 0.000 claims description 68
- 238000009413 insulation Methods 0.000 claims description 65
- 229920002120 photoresistant polymer Polymers 0.000 claims description 61
- 230000008021 deposition Effects 0.000 claims description 19
- 238000004062 sedimentation Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 238000004380 ashing Methods 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 abstract 2
- 230000002950 deficient Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 92
- 238000001259 photo etching Methods 0.000 description 24
- 238000000151 deposition Methods 0.000 description 18
- 238000002207 thermal evaporation Methods 0.000 description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 239000000956 alloy Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 229910052804 chromium Inorganic materials 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008101015456A CN101526707B (zh) | 2008-03-07 | 2008-03-07 | Tft-lcd阵列基板制造方法 |
US12/270,206 US7948570B2 (en) | 2008-03-07 | 2008-11-13 | Thin film transistor array substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008101015456A CN101526707B (zh) | 2008-03-07 | 2008-03-07 | Tft-lcd阵列基板制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101526707A true CN101526707A (zh) | 2009-09-09 |
CN101526707B CN101526707B (zh) | 2011-10-12 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101015456A Active CN101526707B (zh) | 2008-03-07 | 2008-03-07 | Tft-lcd阵列基板制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7948570B2 (zh) |
CN (1) | CN101526707B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102629582A (zh) * | 2011-10-19 | 2012-08-08 | 京东方科技集团股份有限公司 | Tft阵列基板的制造方法、tft阵列基板及显示器件 |
CN102637648A (zh) * | 2011-07-15 | 2012-08-15 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示器、阵列基板及其制造方法 |
CN102023432B (zh) * | 2009-09-18 | 2012-08-15 | 北京京东方光电科技有限公司 | Ffs型tft-lcd阵列基板及其制造方法 |
CN102033345B (zh) * | 2009-09-30 | 2014-01-15 | 北京京东方光电科技有限公司 | 液晶显示器及阵列基板的制造方法 |
CN104576526A (zh) * | 2013-12-19 | 2015-04-29 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN106328715A (zh) * | 2016-08-17 | 2017-01-11 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
CN110098259A (zh) * | 2019-04-10 | 2019-08-06 | 深圳市华星光电技术有限公司 | 非晶硅薄膜晶体管及其制作方法 |
CN110161799A (zh) * | 2018-02-11 | 2019-08-23 | 京东方科技集团股份有限公司 | 一种相移掩模板、阵列基板、其制备方法及显示装置 |
CN111679474A (zh) * | 2020-06-15 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | 像素设计方法、装置及电子设备 |
CN113594185A (zh) * | 2021-07-29 | 2021-11-02 | 北海惠科光电技术有限公司 | 阵列基板的制作方法及阵列基板 |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102034751B (zh) * | 2009-09-24 | 2013-09-04 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN102693938B (zh) * | 2011-04-15 | 2014-06-18 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示器、阵列基板及其制造方法 |
CN102629575B (zh) * | 2011-08-23 | 2014-09-24 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
CN102655116B (zh) * | 2011-09-28 | 2014-03-26 | 京东方科技集团股份有限公司 | 阵列基板的制造方法 |
CN102655117B (zh) * | 2011-11-09 | 2014-07-02 | 京东方科技集团股份有限公司 | 阵列基板及制造方法、显示装置 |
CN102738007B (zh) * | 2012-07-02 | 2014-09-03 | 京东方科技集团股份有限公司 | 一种薄膜晶体管的制造方法及阵列基板的制造方法 |
TWI483036B (zh) * | 2012-11-19 | 2015-05-01 | Au Optronics Corp | 陣列基板及其製作方法 |
CN103296033B (zh) * | 2013-05-28 | 2016-05-11 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法 |
CN104375732B (zh) * | 2014-11-28 | 2018-09-14 | 京东方科技集团股份有限公司 | 内嵌式触控模组、驱动方法、触控显示面板和显示装置 |
CN104461142B (zh) * | 2014-12-10 | 2017-06-30 | 京东方科技集团股份有限公司 | 触控显示基板及其制备方法、触控显示装置 |
KR102297760B1 (ko) * | 2014-12-31 | 2021-09-03 | 엘지디스플레이 주식회사 | 산화물 박막 트랜지스터를 구비한 액정표시장치 |
CN104678671B (zh) * | 2015-03-30 | 2018-12-21 | 京东方科技集团股份有限公司 | 显示基板及其制造方法和显示装置 |
CN106057736B (zh) * | 2016-08-02 | 2022-12-27 | 信利半导体有限公司 | 一种tft基板的制备方法及tft基板 |
CN114270252B (zh) * | 2020-03-24 | 2023-10-24 | 京东方科技集团股份有限公司 | 阵列基板、显示装置和制造阵列基板的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6900856B2 (en) * | 2002-12-04 | 2005-05-31 | Lg. Philips Lcd Ltd. | Liquid crystal display device and manufacturing method thereof |
CN1272664C (zh) | 2003-12-03 | 2006-08-30 | 吉林北方彩晶数码电子有限公司 | 薄膜晶体管液晶显示器制造方法 |
KR100983716B1 (ko) * | 2006-06-30 | 2010-09-24 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
-
2008
- 2008-03-07 CN CN2008101015456A patent/CN101526707B/zh active Active
- 2008-11-13 US US12/270,206 patent/US7948570B2/en active Active
Cited By (16)
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---|---|---|---|---|
CN102023432B (zh) * | 2009-09-18 | 2012-08-15 | 北京京东方光电科技有限公司 | Ffs型tft-lcd阵列基板及其制造方法 |
CN102033345B (zh) * | 2009-09-30 | 2014-01-15 | 北京京东方光电科技有限公司 | 液晶显示器及阵列基板的制造方法 |
CN102637648A (zh) * | 2011-07-15 | 2012-08-15 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示器、阵列基板及其制造方法 |
CN102637648B (zh) * | 2011-07-15 | 2014-03-05 | 京东方科技集团股份有限公司 | 薄膜晶体管液晶显示器、阵列基板及其制造方法 |
CN102629582A (zh) * | 2011-10-19 | 2012-08-08 | 京东方科技集团股份有限公司 | Tft阵列基板的制造方法、tft阵列基板及显示器件 |
CN102629582B (zh) * | 2011-10-19 | 2014-04-02 | 京东方科技集团股份有限公司 | Tft阵列基板的制造方法、tft阵列基板及显示器件 |
CN104576526B (zh) * | 2013-12-19 | 2018-07-17 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN104576526A (zh) * | 2013-12-19 | 2015-04-29 | 北京京东方光电科技有限公司 | 一种阵列基板及其制备方法和显示装置 |
CN106328715A (zh) * | 2016-08-17 | 2017-01-11 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
CN106328715B (zh) * | 2016-08-17 | 2019-02-01 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
CN110161799A (zh) * | 2018-02-11 | 2019-08-23 | 京东方科技集团股份有限公司 | 一种相移掩模板、阵列基板、其制备方法及显示装置 |
CN110098259A (zh) * | 2019-04-10 | 2019-08-06 | 深圳市华星光电技术有限公司 | 非晶硅薄膜晶体管及其制作方法 |
US11387370B2 (en) | 2019-04-10 | 2022-07-12 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Amorphous silicon thin film transistor and method for manufacturing the same |
CN111679474A (zh) * | 2020-06-15 | 2020-09-18 | 深圳市华星光电半导体显示技术有限公司 | 像素设计方法、装置及电子设备 |
US11880641B2 (en) | 2020-06-15 | 2024-01-23 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel design method, pixel design device, and electronic equipment |
CN113594185A (zh) * | 2021-07-29 | 2021-11-02 | 北海惠科光电技术有限公司 | 阵列基板的制作方法及阵列基板 |
Also Published As
Publication number | Publication date |
---|---|
US7948570B2 (en) | 2011-05-24 |
US20090225249A1 (en) | 2009-09-10 |
CN101526707B (zh) | 2011-10-12 |
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Effective date of registration: 20201201 Address after: 215200 No. 1700, Wujiang economic and Technological Development Zone, Suzhou, Jiangsu, Zhongshan North Road Patentee after: Gaochuang (Suzhou) Electronics Co.,Ltd. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee before: BOE TECHNOLOGY GROUP Co.,Ltd. Patentee before: BEIJING BOE OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |