CN101512708A - Closely spaced electrodes with a uniform gap - Google Patents

Abstract

An improved design for maintaining separation between electrodes in tunneling, diode, thermionic, thermophotovoltaic and other devices is disclosed. At least one electrode is made from flexible material. A magnetic field is present to combine with the current flowing in the flexible electrode and generate a force that counterbalances the electrostatic force or other attracting forces between the electrodes. The balancing of forces allows the separation and parallelism between the electrodes to be maintained at a very small spacing without requiring the use of multiple control systems, actuators, or other manipulating means, or spacers. The shape of one or both electrodes is designed to maintain a constant separation over the entire overlapping area of the electrodes. The end result is an electronic device that maintains two closely spaced parallel electrodes in stable equilibrium with a uniform gap therebetween over a large area in a simple configuration for simplified manufacturability and use to convert heat to electricity or electricity to cooling.

Description

Closely spaced electrodes with uniform gap

Technical field

The present invention relates to be designed to have very little interval between the electrode and also needing the diode of the heat isolation between the electrode, thermionic, that wear then, hot-photovoltaic, thermionic device and other device in some cases.The present invention is applied to heat-wear then and heat-photovoltage generator and heat pump especially, and goes for using the similar system of thermion and hot electron method.These are worn generator then and with heat pump thermal power transfer are become electric energy and can carry out contrary operation so that cooling to be provided.The present invention can also be applicable to by flow through electric current between two electrodes needs any device at approaching, the parallel interval of two electrodes.

Background technology

High energy electron has been used in a lot of electronic devices from the phenomenon that a conductor (emitter) flows to another conductor (collector electrode), and is used for various purposes.For example, the vacuum tube diode is exactly to realize by this method, and this physical phenomenon is called as thermionic emission.Owing to be subjected to the restriction of available big relatively physical separation, these diodes must be in very high temperature (surpassing 1000 Kelvins (Kelvin) degree) work down.This thermode must be very hot so that make the long distance of its operation arrive collector electrode and overcome high quantum potential barrier to the enough energy of electronics increase.Howsoever, vacuum tube allows electronic diode and amplifier afterwards to set up.Along with time lapse, by using alkali metal, come coated electrode as caesium or oxide, so that make great efforts to reduce working temperature, optimize these devices thus.Although be used for temperature that thermion produces still far above room temperature, the method that this power produces is for being useful from burning or from sun concentrator to the heat conversion of electric energy.

In recent years, have been found that at for example atomic distance order of magnitude of 2 to 20 nanometers, then electronics will flow under extremely low temperature even at room temperature if emitter and collector is very close each other.Closely-spaced with this, the electron cloud of the atom of two electrodes is so approaching, to such an extent as to hot electron is in fact mobile to the collector electrode cloud from the emitter cloud, and does not have the physics conduction.Such electric current flows when electronics intersects, but electrode does not have the physics contact, and this is called as wears effect then.Scanning is worn microscope then and is for example used pin point, conduction, the very close conductive surface of this conductive pin, and along with this surface is passed in conductive pin scanning, come this surperficial atom profile is drawn by drawing electric current.(people's such as Binnig) United States Patent (USP) 4343993 has been instructed and thisly has been applicable to that scanning wears microscopical method then.

Know in the industry, if separating, this atom can remain on the large tracts of land (for example a square centimeter), then sizable heat can convert electric energy to by the diode-type device, and this device is being useful as refrigerator or reclaiming from various resources aspect the discarded heat energy.Referring to by Y.Hishinuna, T.H.Geballe, B.Y.Moyzhes and T.W..Kenny are published in the paper " Efficiency of Refrigeration usingThermotunneling and Thermionic Emission in a Vacuum:Use of Nanometer ScaleDesign " on the volume in 23 days the 78th April of calendar year 2001 the 17th phase " Applied Physics Letters ", by Y.Hishinuna, T.H.Geballe and B.Y.Moyzhes be published on the 22nd phase of 25 days the 81st November in 2002 volume " Applied Physics Letters " paper " Vacuum ThermionicRefrigeration with a Semiconductor Heterojunction Structure " and by Y.Hishinuma, T.H.Geballe, B.Y.Moyzhes and T.W.Kenny are published in the paper " Measurements of Cooling by Room Temperature Thermionic Emission Across aNanometer Gap " on the volume 1 day the 94th October in 2003 the 7th phase " Joumal of Applied Physics Letters ".Interval between the electrode must be enough little of to allow " heat " electronics (those electronics with the energy that is higher than Fermi level) to flow, still can not be too approaching so that allow normal conduction (flowing at Fermi level or following electronics).The scope that has the spacing distance that can work between 2 and 20 nanometers allows from electric energy to every cubic centimetre several kilowatts of refrigeration conversions.Referring to the paper of delivering by people such as Y.Hishinuna " Efficiency of Refrigeration using Thermotunneling and ThermionicEmission in a Vacuum:Use of Nanometer Scale Design ".These lists of references are also advised alkali metal or the other materials coating on emission electrode or the advantage of individual layer, so that be implemented in from the low work content of an electrode to the electron transfer of another electrode.This coating or individual layer have also reduced working temperature and have improved conversion efficiency.

The theoretical efficiency of thermion refrigerator of electrode that Mahan has disclosed the cold temperature of work content that a kind of use has 0.7eV and 500K is higher than 80% of Carnot (Kano) efficient.Referring to the paper " Thermionic Refrigeration " that is published in by G..D.Mahan on the volume 1 day the 76th October in 1994 the 7th phase " Journal of Applied Physics ".By analog-converted, wish that the efficient that electronics passes journey then also is a high part of Carnot efficient.But Carnot efficient shows as the coboundary on the implementation efficiency of hot electron conversion.

On the large tracts of land interval of electrode remained on atomic size made up independently in the device do not have two, most important challenge, this can reduce the heat from conductor.Microscope is worn in scanning then, and for example needing is that friction and its operation are limited to the special-purpose laboratory environment on the area of several square nanometers.Even more in recent years, all cooling provisions in the working equipment all have been limited on the area of several square nanometers.Referring to the paper of delivering by people such as Y.Hishinuma " Measurements of Cooling by RoomTemperature Thermionic Emission Across a Nanometer Gap ".

The electrode gap of the large-size of about 100 nanometers can support to use heat-photovoltage method with the conversion of heat to electric energy.In heat-photovolatic system, photon passes the gap then.Thermal source causes the light emission electrode to carry out radiation, and if the spaced far between second photoactive electrode less than radiation wavelength, then ten times up to translation function also are possible, with respect to the standard photovolatic system.Thermal source can be by concentrated sunlight, combustion of fossil fuel or other means.The light emission electrode can be made of for example tungsten.Photoactive electrode can be made by silicon, selenium or indium arsenide potassium.About the more information of heat-photovoltage method, referring to by R.DiMatteo, P.Greiff, D.Seltzer, D.Meulenberg, E.Brown, E.Carlen, K.Kaiser, S.Finberg, H.Nguyen, J.Azarkevich, P.Baldasaro, J.Beausang, L.Danielson, M.Dashiell, D.DePoy, H.Ehsani, W.Topper, the paper " Micron-gapThermoPhotoVotaics (MTPV) " that K.Rahner and R.Siergie deliver in AIP (American Institute of Physics) " Thermophotovoltaic Generationof Electricity Sixth Conference " meeting in 2004.

The other method that is used for DIRECT ENERGY conversion and cooling realizes by thermoelectric device.These devices use the material of showing Seebeck (Seebeck) effect, wherein the temperature difference produces voltage between two knots of material inequality, perhaps use and show the material of Peltier (Pa Er card) effect on the contrary, the voltage that wherein applies produces temperature contrast between these knots.Voltage from the Seebeck effect generally is proportional to two temperature differences of tying, and the power that shifts from the heat of Peltier effect is proportional to the electric current that flows through these knots.A kind of persistent challenge of thermoelectric device is that the material between the knot is two physics contacts between the electrode.This contact causes electrical short, has limited any advantage from the Seebeck effect, and has produced hot short circuit, has limited any advantage from the Peltier effect.Between these knots or the nano gap in the material tied isolate by between the hot side of device and cold side, producing heat, should solve this obstinate problem, reduced the effect of the hot short circuit of restriction Peltier effect thus.The electrical short of restriction Seebeck effect has also been reduced in this gap.If this gap is the pin hole gap of suitable dimension, then can realize even bigger interests.These theoretical and experiment works show compressor that this vacuum gap can allow these solid state device to finish to be used for cooling off and finish conversion such as the rotary machines such as gas-turbine and air-flow turbine that resemble electric energy at heat.

Therefore, need a kind of device, its is saved cost and effectively thermal power transfer is become electric energy in packing, this packing thermal source easy to use as input and circuit must power as output.Comprise enriching thermal source and can being called electric energy at an easy rate of waste heat etc.Adopt the example of this device should help environment, save money or promptly help environment to save money again, it comprises:

(1) the ratio photovoltaic device that uses at present more effectively converts the heat and the light of the sun to electric energy.A lot of product introductions by using this thermal conversion device to adopt the elevated temperature heat emission of ions with from solar collector recirculation heat energy.Referring to being published in paper " Thermionic Refrigeration " and " MultilayerThermionic Refrigerator " on the volume 1 day the 83rd May in 1998 the 9th phase " Journal ofApplied Physics " respectively by people such as G..D.Mahan and by G.D.Mahan, J.A.Sofao and M.Bartkoiwak.Yet if realize wearing effect then under the normal temperature that takes place, this conversion cost is lower, and more popular.

(2) will be by internal combustion engine, as in automobile, using, the heat? recovery of generation is to useful action.Obtainable some automobile today that is called as mist-electric automobile can use electric energy or internal combustion engine to produce action.In the internal combustion engine of today, about 75% of the energy in the gasoline is converted into waste heat.Then wearing switching device can be with from most of heat? recovery of the engine of hybrid vehicle and put it into battery and be used for using afterwards.The heat of United States Patent (USP) such as (Cox people) instruction spontaneous combustion chambers in a kind of future 6651760 is changed and is given action with energy storage or conversion.

(3) reduce the needs that enter the pernicious gas in the environment.Energy-efficient hybrid vehicle is clean example, wherein can reduce the noxious emission gas that enters in the environment.The discharges heat of conversion engine and hybrid engine stored or produced electric power then in hybrid battery device further increases the efficient of hybrid vehicle and reduces the needs that exhale pernicious gases.The cooling agent that uses in refrigerator is in addition a little examples of removing the necessary pernicious gas of heat, and wears the needs that switching device will reduce the emission pernicious gas then.

(4) reclaim heat energy in the acceptable moment, then it is stored in the battery as chemical energy, utilize it again in the unacceptable moment then.Then wear switching device and solar energy converting is become electric energy during by day, then it is stored in the battery.During night, the energy content of battery that is stored will be used to produce electric power.

(5) energy that produces from geothermal energy.Heat is present in a lot of places on the earth surface, and comes down to unlimited enough dark in earth the inside.Effectively then, wear transducer and will develop this energy supply.

(6) freeze by compactness, quiet and stable solid state device, wherein thisly wear the cooling that device can be provided for air-conditioning or refrigerator then, thereby replace the needs of a large amount of wind-force machines and compressor.

(7) energy that produces by body heat.Hot body produces about 100 watts of heats, and this heat can be converted into useful electric energy and is used for hand-held product, for example mobile phone, radio telephone, music player, individual digital auxiliary system and flashlight.As the thermal conversion device in the disclosure, mentioned from producing enough energy by the heat that applies in the human body parts contact and operate the battery that is used for these hand-held products or to its charging.

(8) from the electric energy of combustion fuel.The trees stove produces the heat of several myriawatts.This device of wearing then can produce one or two kilowatt electric energy according to the heat that is enough to typical household appliances power supply.Identical application can also realize by burn other fuel such as natural gas, matchmaker and other similar materials.Can not need to be connected to power network grid or noisy electric generator to have modern utensil in the family of remote areas then.

Need pay close attention to two parameters less than the challenge in gap, 20.0 nanometers interval together at two parallel electrodes.A parameter is a surface roughness, and another parameter is a surface flatness.That surface roughness is different from is little, the smoothness on the local area.Hole and scratch are the examples that influences the deviation of surface roughness.Surface flatness is different from the collimation on the large tracts of land.Warpage, bending, to spread be the example that influences the deviation of surface flatness.

The current obtainable best technique that is used for integrated circuit when use is polished two kinds of rigid materials, and this representative evenly separates the further challenge of planting in the maintenance that in a single day realizes.Use the metal of technology polishing of today or semiconductor surface can be easy to realize roughness less than 0.5 nanometer.

Then there are one or more following restrictions in the state of wearing the prior art of power conversion device: (1) is too big at interval for wearing effect then, (2) area is too little for enough power conversion, (3) layer that can not thermal insulation causes the solid material of low conversion efficiency, (4) for manufacturing cost effectively, design is too complicated.

Realized 10 microns or bigger interval by a lot of conversion efficiencies for thermionic systems, but these systems only under very high temperature, operate, for fail safe, need expensive design, and be limited to the environment of realizing this temperature.

Then wear in the microscopical design in scanning, the interval that the method by instruction in United States Patent (USP) 4343993 such as (Binnig people) has realized about 2.0 to 20.0 nanometers, but effective area is the order of magnitude of several square nanometers.This area too little (comparing) with about one square centimeter or above required area, to such an extent as to can not allow enough electric currents to flow through, even in optimal material, can not change enough energy.

The semi-conductor industry instruction also adopts a lot of methods to be used to control physical parameter, as thickness, in several nanometer scale.Thermoelectric device is the example that utilizes the integrated circuit of laminated material switching energy.Referring to the paper " Design and Characterization of Thinfilm Microcoolers " that is published in by ChrisLaBounty, Ali Shakouri and John E.Bowers on the volume in 1 day the 89th April of calendar year 2001 the 7th phase " Journal of Applied Physics ".Yet these methods all need solid material to contact with each other in layer.Heat is easy to flow to another layer, the restriction temperature difference and conversion efficiency from one deck.Because the contact of two electrodes, therefore design is subjected to the domination of available thermoelectric sensitive material, and is used for the energy barrier that electronics passes and can not constitutes arbitrarily, may realize by the width that vacuum gap is set.Material with desired properties is external and element costliness, as bismuth and tellurides.Owing to these reasons, thermoelectric device is limited to the poor efficiency of the expensive of every watt of cooling energy and about percent 7.

The technology of separating two about 2.0 to 20.0 nanometers of conductor on a sq has realized by the array that uses feedback control system that wherein feedback control system is very accurate on these distances.Control system comprise be used to measure actual interval, with its feedback device of comparing in desirable interval, and be used to make element near or away from so that keep the mobile device at desirable interval.Feedback device can be measured two electric capacity between the electrode, and this electric capacity increases along with reducing at interval.In the prior art state, the mobile device that is used for these sizes is the exciter that produces action by piezoelectricity, electromagnetism or electrostriction phenomena.United States Patent (USP) such as (Tavkhelidze people) 6720704 and U.S. Patent application 2007/0033782 such as (Taliashvili people) have been introduced this design, it is included in before the use, use another surface that a surface is formed, use feedback control system to finish collimation then.Because what comprise when with respect to another surface a surface being formed elaborates technology and use a plurality of feedback control systems to come keeping parallelism, this design is the challenge made from low cost.

Disclose additive method in United States Patent (USP) such as (Tavkhelidze people) 6774003 and U.S. Patent application 2002/0170172 such as (Tavkhelidze people), U.S. Patent application 2006/0038290 such as (Tavkhelidze people) and U.S. Patent application 2001/0046749 such as (Tavkhelidze people), these United States Patent (USP)s are included in and insert " sacrifice layer " in the manufacture process between electrodes.Evaporate sacrifice layer then so that between electrode, produce the gap, make electrode near interval to desirable 2～20 nanometers.These three kinds of methods are subjected to the influence of the back manufacturing fluctuation that causes because of the thermal expansion difference between warpage or the electrode easily, perhaps need the array of exciter to compensate these fluctuations, as described at U.S. Patent application such as (Tavkhelidze people) 2005/0189871 and U.S. Patent application 2007/0056623 such as (Tavkhelidze people).

The another kind of method that realizes along with time lapse and keep desirable interval discloses in United States Patent (USP) 6876123 such as (Martinovsky people) and U.S. Patent application 2004/0050415,2006/0192196 such as (Tavkhelidze people), U.S. Patent application 2003/0042819 such as (Martinovsky people), U.S. Patent application 2006/0207643 such as (Weaver people) and U.S. Patent application 2007/0069357 such as (Weaver people), they are by using the insulation gap device, keeping the interval of flexible electrode bigger.A shortcoming of these insulation gap devices is that they conduct heat from an electrode to another electrode, reduces the efficient of transfer process.Another shortcoming of this method is because there being big electrostatic force the flexible metal electrode to be spread or to be out of shape as time goes by between spacer, and lentamente to allowing conduction rather than wearing then or the interval migration of thermionic emission.

Be used for realizing between the electrode desired vacuum space every another kind of method disclose the little space of generation on the interface of two bonding wafers wherein at (Tanielian's) U.S. Patent application 2004/0195934, (Tanielian's) U.S. Patent application 2006/0162761, (Tanielian's) U.S. Patent application 2007/0023077 and (Tanielian's) U.S. Patent application 2007/0137687.Heat-wear is then carried out to allow electronics to pass several nano gaps in these spaces very micropodia.Although heat-wear then can be supported in these gaps, produce undesirable heat conduction around in the gap, and the heterogeneity of electrode gap is difficult to control.

The another kind of method that is used to realize heat-wear then gap be by two wafers with contact towards the surface, use then and draw them to make them separate several nanometers on the exciter, as described in the U.S. Patent application 2006/0000226.Although this method can produce heat-wear then gap, there be the cost and the heat conducting problem between the wafer beyond the gap area of a plurality of exciters in this method.

Be used to realize and keep electrode gap satisfying still keeping that continue and challenge difficulty aspect low-cost heat-wear the then device aspect the gap and producing in batches at interval, no matter pay how many effort less than 20.0 nanometers.

The additional utilization that is used for can mobile electron passing the device of vacuum gap (except directly providing the cooling) is to place this gap at the top of thermoelectric storehouse.In this combination, the hot side and the cold side in thermoelectric gap become thermal insulation, and be therefore more effective.Device with thermoelectric material and vacuum gap can pass through thermoelectric metod, heat-wear the combination of method, thermion method or these methods then, and cooling or thermal conversion are provided.

Therefore still need a kind of be used for wear then, diode and the existing design of bismuth is more effective and more cheaply other devices keep between electrodes vacuum space every the improvement design.Particularly, need a kind of design of electrode of the nearly interval with even vacuum gap.More especially, need a kind of design that has with self-align and self aligned pair of electrodes, wherein between this a pair of electrode, has gap, nearly interval so that electronics by wearing effect, thermion or other emissions or if possible then, with the thermoelectric element combination, shifts and pass the gap.

In my aforementioned parent patent application, introduce and protect a kind of device and technology, adopt electron stream by the mode that can not finish by prior art.Formerly in the design, the electron stream of wearing then in the device is used for two purposes: (1) as hot dynamic flow so that from a conductor to another conductor transmission heat, (2) directly to or move from battery or circuit and to be converted energy.In my aforementioned patent applications, introduced a kind of device architecture and technology, wherein electron stream also is used for producing in desirable electrode gap restoring force and other attractions of parallel static.

Device that is disclosed and technology provide the electrode at the nearly interval with uniform gap.Particularly, the disclosure relates to pair of electrodes, the self-align and autoregistration in gap, nearly interval between them, thus make electronics by wearing effect, thermion or other emissions then, if possible,, and pass this gap with thermoelectricity or heat-photovoltaic element combination.

As described in my the aforementioned parent patent application, flexible material is used for of electrode, and comprise the static that makes naturally and side by side act on the flexible electrode or the magnetic field of other attractions and magnetostatic repulsive force balance, thereby on large tracts of land, be desirable spacing distance location with respect to another electrode surface, aiming at and keep it, and be suitable for spatial offset flatness continuous in each electrode in stable equilbrium position.

By before assembling to the polishing of electrode towards the surface, realized surface roughness less than 0.5 nanometer.Be used on metal, semiconductor and other materials realizing that the industry less than 0.5 Nanosurface roughness is easy to realize polishing technology.

In order to realize the interval less than 20.0 nanometers on one square centimeter or above large tracts of land, the combination that produces contactless force is so that electrode material remains on predetermined space.Under stable equilibrium condition, Already in a power in these diode components is the electrostatic force between the emitter and collector.Owing to apply voltage, opposite charges accumulates on each electrode, and the existence of these electric charges causes the attraction between the electrode.Although electrostatic force is considered to the dominant attraction in the closely spaced electrodes, other attractions also exist, as gravity, surface tension, Van der Waals (Van der Waals) power, and card sago (Casimir) power and stiction.

As described in my the parent patent application, produce second equate but opposite power, it acts on the flexible electrode so that in have a few balance attraction electrostatic force and other attractions, make flexible electrode keep desirable interval and aligning.This second power may be because a kind of physical phenomenon produces: wherein produce power when existing magnetic field and electric current to flow in conductor.This masterpiece is used for the plane that limits perpendicular to the direction by sense of current and magnetic field.

Summary of the invention

The invention provides a kind of device of the patent application to me and the improvement of technology.In a kind of scheme, this second power may be owing to have the i.e. bending generation of the assembly of " bimetallic " of two kinds of materials that are bonded together of different heat expansion coefficient.This bending force is by the heat that moves in the bimetallic response heat operation and cause temperature to increase or reduce producing, or produces by the electricity in the electricity operation, perhaps by these two kinds of reason combination results.Magnetic force or bimetallic power can be designed into individually or side by side realize in the embodiments of the invention in 0.5 to 200nm gap of following two targets: (1) scanning large tracts of land and (2) are realized uniformity automatically and are not lost spacer or exciter array and control system.

By having close electrode or, required magnetic field can being added in the first embodiment of the present invention at the permanent magnet of electrode interior.Permanent magnet material such as iron, cobalt and nickel and their alloy also are high conduction and heat conductive metal.Therefore, these magnetic materials can be compatible with the heat conduction and the conductive characteristic of electrode.Even wish to use non-conduction magnetic field material that magnetic field is provided, this magnet can apply or has the smooth conductor that is installed on it simply by conductor, so that constitute emission electrode.

The temperature that the surface of permanent magnet is set may influence its operating parameter because magnetic material is in their magnetic of Curie temperature level loss, this apart from temperature levels usually between 600 and 1400 Kelvin degrees.Yet in the present invention, magnet can be placed on the cold side or the hot side of switching device, finds that this structure can prevent that magnet from reaching it apart from temperature.

The present invention is by a kind of new, non-obvious mode provides a kind of electrode material that is used for together, so that produce simple and cheap heat-wear then, heat-photovoltage or thermionic device, it has the following advantages: (1) is by eliminating required exciter and the control system property simplified of prior art, (2) adopt technology and the manufacturing process in bulb and semi-conductor industry, developed to realize low cost and batch process, (3) just realized narrow gap between the electrode without spacer, thereby allow hot electron to satisfy through another electrode from an electrode, cool off first electrode and (4) thus and keep uniform gap on as one square centimeter at the large electrode area.

The other system, device, the feature and advantage that are disclosed device and technology make those skilled in the art clearer by following drawings and detailed description.Intention makes all spare systems, device, feature and advantage all be included in this specification, within the scope of the invention and be subjected to the protection of appended claims.

Description of drawings

Can understand the device that is disclosed and a lot of schemes of technology better with reference to accompanying drawing 1-23.Parts in the accompanying drawing are not drawn in proportion, focus on clearly representing principle of the present invention.And in the accompanying drawings, identical reference marker needs not to be corresponding accessory in institute's drawings attached.Disclose typical embodiment in conjunction with the accompanying drawings, but the disclosure is not intended to be limited to embodiment disclosed herein.On the contrary, disclosure intention covers all alternative, alter mode and equivalent way.

Fig. 1 represents an embodiment of self-align electrode device of the present disclosure;

The directive state of electric current, magnetic field and magnetostatic power in the device of Fig. 1 a presentation graphs 1;

The alternative embodiment of the electrode 2 in the device of Fig. 1 b presentation graphs 1;

Fig. 2 is the schematic top plane graph of electrode 1 of the device of Fig. 1;

Fig. 2 a is the perspective bottom diagram of cut-out of embodiment of the electrode of presentation graphs 2;

The alternative embodiment of the device of Fig. 3 presentation graphs 1;

Another embodiment of the device of Fig. 4 presentation graphs 1;

Fig. 5 is the curve of the interaction force in the device of presentation graphs 1-4 qualitatively;

Fig. 6 is the curve of the interaction force in Fig. 1 of representing to use polished metal electrode qualitatively, 3 and 4 the device;

Fig. 7 is the curve of the interaction force in Fig. 1 of representing to use polished silicon electrode qualitatively, 3 and 4 the device;

Fig. 8 is the schematic diagram how the expression electrode can be made by silicon wafer material;

Fig. 9 a represents to be suitable for the alternative embodiment with big gap that heat-photovoltage is used;

Fig. 9 b is the curve that is similar to Fig. 5 of the interaction force in the device of presentation graphs 9a;

Figure 10 a-10c represents to use technology public in semi-conductor industry how a plurality of electrode pairs of Fig. 8 to be assembled the schematic diagram that is used to produce in batches simultaneously;

Figure 11 a-10b represents how a plurality of electrode pairs of Fig. 8,9a or 10c to be encapsulated in the big heat exchanger to realize the more high density and the capacity of device function;

Figure 12 a-12b represents to use silicon public in industry, glass, glass dust vacuum seal and other standard microelectron-mechanical (MEM) encapsulation technologies how to encapsulate the electrode pair of Fig. 8;

Figure 13 represents for making big device and being attached to the array of the permanent magnet of the permeable grid of magnetic than gadget by Fig. 8,9a, 10c, 11a or 12b;

Figure 14 is an example that is used in the startup electronic circuit in the gap in the device that forms Fig. 8,10c, 11a or 12b before the actual heat energy of embodiment that produces electric power;

Figure 15 a-15b represents wherein by the bimetal structure meander electrode and produces second embodiment of small area of contact at the center;

Figure 16 represents how the bimetallic embodiment of Figure 15 is placed on the inside of the silicon MEM encapsulation of making up with the mobile exciter that is used for the control gap width;

Thereby Figure 17 represent to have locomotivity use magnetic Lorentz (Lorentz) power exciter separate the contact center-and the electrode device according to the bimetallic embodiment of Figure 15-16 in a realization center-gap;

Figure 18 a-18c represent to have use edge support separate the contact center-the electrode device according to the bimetallic embodiment of Figure 15-16 of locomotivity; Figure 18 a represents the device under the passive states, and Figure 18 b represents the device under normal, the active state, and Figure 18 c represents the device under the excess temperature state;

Figure 19 a-19c represents to be placed on vacuum chamber or the neutralization of other shells prevent Figure 18 a-18c of thermo-contact except external container device respectively;

Figure 20 represents the simplified design according to the electrode device of second embodiment, wherein eliminates separate vacuum chamber by having for the clearance space of himself vacuum chamber;

Figure 21 represents to replace the electrode device of the design shown in Figure 20, and the physics contact that has has wherein reduced or eliminated clearance surface is to prevent to damage during operation them;

Figure 22 represent according to a plurality of devices of second embodiment how connected in electrical series and heat be connected in parallel integratedly with the customization that device is provided, wherein be electrically connected and vacuum casting is realized with the bending cable material; With

Figure 23 represents to use the design that be similar to Figure 22 of silicon wafer substrate as vacuum casting.

Embodiment

In more detail below with reference to accompanying drawing, wherein identical reference marker is represented components identical in institute's drawings attached, and the exemplary embodiments of device of the present disclosure and technology is shown among Fig. 1-2 4.

Generally speaking, disclose a kind of device and technology, employing is towards electrode and comprise that two power distribute.Main electrostatic attraction between electrode distributes by the charge generation of electrode interior.Equal but opposite repulsive force distribution is produced in conjunction with the Distribution of Magnetic Field that applies by the CURRENT DISTRIBUTION of electrode interior.The stable balance interval of setting up electrode towards the surface of electrode is crossed in effect simultaneously thereby these two power distribute.

In the detailed description below, Fig. 1-8 is similar to Fig. 1-8 of my aforementioned patent applications.

Fig. 1 represents an embodiment of the present disclosure.Electrode 1 is mounted in flexible metal foil or the metal forming on plastic film or substrate such as the polyimides.Plastic helps to prevent that paper tinsel from after the repeating motion that is produced by static and electromagnetic force cracking, bending or cracked taking place.The electrical property of plastic or electrode 1 also can be used as vibration or the unsteadiness that prevents that between balance period it from moving.Electrode 2 is the permanent magnets that constituted or applied by electric conducting material.In typical case, electrode 2 is rectangular blocks.Polished on the surface that faces one another to two electrodes.If this device is used for thermal power transfer, then there is thermal source 30, if perhaps this device then is the object that is cooled as refrigerator.If this device is used as refrigerator then has power supply 10, if this device then additionally is an electric loading as the thermal conversion generator.There is insulating barrier 4, is used for working as this device when inoperation (that is, when this device is closed), allow the tip 6 of electrode 1 to have non-conductive dwell point.In addition, one of electrode can have the predetermined balance of building than the electrode child coating of thin non-conducting material at interval, wherein when device is not worked, and another rest of described electrode.The layer or the coating 5 at the top of electrode 2 are the materials that are designed to have low work content, so that electronics is worn between electrode 2 and electrode 1 then.Connector 9a and 9b and electric wire 8a and 8b finish circuit.Chamber 20 usefulness vacuum or inert gas seal are towards the zone between electrode 1 and 2, so that from the heat conduction minimum of an electrode to another electrode.Suitable gas comprises argon and helium.The wider end of flexible electrode 1 is installed on the supporting structure in the chamber 20 securely, and when cutting off the electricity supply, electrode 1 rests on the tip 6 on insulating barrier or the film 4.

Fig. 1 a is illustrated in the electrode 1 electric current (I) that flows, because the magnetic field (B) that exists permanent magnet to produce in electrode 2 inside and by the directive state of the power F of the interaction generation of I and B.On each point on the electrode, the electrostatic attraction opposite and balance of pull-down electrode 1 points to electrode 2. downwards to power F in directive effect vertically upward

Fig. 1 b represents the replacement setting of electrode 2.Here, the surface of the material array composition on pinnacle 5.The geometry on these pinnacles allows to strengthen the electronics emission from electrode 2, and this is because the magnetization electric field in the zone on pinnacle.After polishing, because have a mind to or the non-roughness of having a mind on the surface of electrode 2 also may produce these pinnacles.

The device of Fig. 1 also has additional force, these additional forces powered-down, balance or from powered-down to the balance transition or from balance to the powered-down transition period, produce or change mechanism or system to help its operation.For example, these mechanisms can suppress system to prevent that electrode 1 is in its balance stop place ambient vibration or vibration.These additional forces also may be mechanically, magnetically, electromechanical ground, electro permanent magnetic ground or produce by other modes so that remedy or offset not enough or excessive on the size of main static and magnetic face-off equilibrant force.

The material that is used for flexible electrode 1 can be conducting metal, semi-conducting material, compound glass/metal or multiple layer metal/plastics.Typical conducting metal comprises gold, silver, aluminium and copper.Typical semi-conducting material comprises silicon, germanium and GaAs.If metal self is flexible not enough, conducting metal or semi-conducting material can randomly be installed in have that the layer that increases flexible material to metal is gone up or with its combination, as glass, acid amides, polyester, polyimides, polypropylene or polyolefin.

The permanent magnet of electrode 2 can be contained in the inside of electrode or becomes the part of electrode.In exemplary embodiments, permanent magnet can comprise the conduction ferromagnetic material of any combining form of iron, cobalt, nickel, neodymium or aluminium.Perhaps, permanent magnet can comprise one or more the non-conductive ferromagnetic materials with the electric conducting material coating.Typical non-conductive ferromagnetic material comprises ferrite, barium ferrite and the ferric oxide particles that is sealed in the adhesive.

Layer on the electrode 2 or coating 5 can be that low work function materials, thermoelectric sensitive material, resonance are worn the combination that material, electric field strengthen quality or these materials then.The exemplary embodiments of low work function materials comprises any multilayer alkali metal or other combinations, alkali-metal alloy, oxide or diamond, as diamond film or nanotube.The summit that is produced by surface roughness or composition (for example, shown in Fig. 1 b) and the gathering of the lowest point can strengthen electric field, have therefore improved the electronics emission from electrode 2.At last, be arranged for and realize that the semiconductor layer that resonance is worn then also can improve the electronics emission.The typical semiconductor material comprises silicon, germanium and GaAs.Typical thermoelectric sensitive material comprises the tellurides bismuth of various doping.

Low work function materials or the reinforcing material 5 ' among Fig. 1 b in the layer 5 of Fig. 1 can for example be caesium (Cs), barium (Ba), strontium (Sr), rubidium (Rb), germanium (Ge), sodium (Na), potassium (K), calcium (Ca), lithium (Li) and their combination and oxide.These materials that illustrate are reduced to 1.1eV with the work content of emission electrode 2 from 4-5eV.Additional low work function materials comprises the oxide and the silicon of thorium (Th), plating.Here NM other materials also can be realized low work content, and the interpolation of this material layer is a conspicuous spreading range of the present invention.For example, advised being convenient to dissimilar layer, the broad gap semiconductor layer that electronics is worn then by Korotkov.Referring to the paper " Possible Cooling byResonant Fowler-Nordheim Emission " that is published in by A.N.Korotkov and K.K.Likharev on the volume 23 days the 75th August in 1999 the 16th phase " Applied Physics Letters ".Here, the thin oxide layer that its thickness is carefully controlled to condition of resonance, helps hot electron to spill into vacuum Electron Excitation thus.And 5 ' of the layer 5 of Fig. 1 and Fig. 1 b can be carbon nano pipe array or similar setting, so that emission maximization and work content minimize.The material of insulating barrier 4 can comprise glass, polyimides or other plastics.

The stream of the electronics among Fig. 1 and uniqueness of the present invention are as described below.Free electron flows to emission electrode 2 from power supply or electric loading 10.From electrode 2 to the free electron of electrode 1 emission by this design alternative, thereby become the hot electron that can remove heat from electrode 2.A kind of scheme of the present invention is: under the situation of the magnetic field B shown in the directivity ground, free electron flows in Fig. 1 from left to right in electrode 1 inside in having Fig. 1 a.This free electron flow direction is in the magnetic field combination results that applies repulsive force shown in the directivity ground in Fig. 1 a, this repulsive force balance attract electrostatic force and realized constant and predetermined interval between large tracts of land top electrode 1 and electrode 2.

Fig. 2 is the schematical top view of exemplary embodiments of the electrode 1 of Fig. 1, and expression has the cross section 7 of the arrow that points to the electron stream direction.Cross section 7 has and equals to gather the current density of wearing electric current then, described set wear then electric current by the surface of all electrodes to cut apart by the length 7 of cross section 7 the left side pick up.Owing to wish to wear then the area of wearing activity then that electric current is proportional to the left side of arrival 7, then the length of cross section 7 will be proportional to increase increase best on the left of it of the area of electrode surface.Therefore exponential function is depicted on the border 3 of electrode 1.Like this, the width on the surface of flexible electrode 1 is growth exponentially from its tip 6 to its end opposite.Exponential function equals the area of being encircled a city up to its integrated point by it and X-axis on mathematics.But also other variations of offset current density of function by border 3 is depicted cause changes in resistance as the path owing to electrode 1 inside.And in some cases, this design can be carried out sub-optimization with triangular-shaped electrodes 1, for easy manufacturing.

Fig. 2 a is the schematic diagram of bottom of the cut-out of electrode 1 shown in Figure 2.It is illustrated on its basal surface of electrode 2 how electrode 1 is carried out composition.This figure allows to wear then area (being limited by the total X of the surperficial x that raises) and is different from the electric current obtainable gross area Y that flows.Composition electrode 1 in this mode allows to be used for big gross area Y, so allows to be used to gather mobile the losing than low resistance loss and heat generation of electric current.Simultaneously, the area that approaches electrode 2 is minimized, this has reduced electrostatic force, and this must be overcome with on the desirable position that electrode is placed on they.The same effect of the composition of electrode 1 also can by after the polishing have a mind to or non-surface roughness of having a mind to realizes.The part of raising off and on 4 is can supporting electrode 1 and place the insulating barrier of electrical short, because the foil material of electrode 1 is to electrode 2 coverings when device is switched on.

Fig. 3 is that expression can realize the more schematic diagram of another embodiment of the present disclosure of compact package.Here, electrode 2 is therefrom cylindric permanent magnets of mind-set outer radial scattering of the direction of magnetization.Electrode 1 adopts the shape of index spiral now, and its width increases along with every circle.Perhaps, electrode 1 can have linear increase spiral-shaped, and as spiral-shaped near index simply, this is for easy manufacturing.Because it is spiral-shaped that electrode 1 has, electric current is in tangential direction.Masterpiece in the generation grade 1 is used in vertical direction, and the repulsive force that makes the electrostatic attraction dynamic balance is provided, and is similar among Fig. 1 to be realized.The spiral-shaped present embodiment that makes of electrode 1 has compacter design, does not need to pass a long size and strolls because always wear area then, as shown in fig. 1.Cylinder-shaped magnet with that magnetization (magnetic field is measured in radial direction in the center with respect to device) of Jingxi district is conventional acceptable in industry, because they are very popular for setting up in the loudspeaker.

The embodiment in Fig. 1 and 3, the present invention also has a lot of other tangible embodiment, and it uses the special shape of an electrode to realize uniform repulsive force.Fig. 4 is the schematic diagram of another exemplary embodiments of expression.It uses the electrode that changes magnetic field rather than change width.For example, in Fig. 4, along with multiple current more forms acceptably from wearing area then, the current density in the electrode 1 increases from left to right.In order to realize the uniform force on the electrode 1, magnetic field is reduced from left to right, need less field intensity because having produced more current density.Like this, the current density of the intensity in magnetic field in flexible electrode 1 changes inversely, so that realize constant force.The mode that is used for magnetic field is reduced from left to right is the amount that changes the degree of depth of the permanent magnet material 23 that electrode 2 comprises and increase unmagnetized material 24, as copper or aluminium.

Thereby how Fig. 5 interacts and produce constant interval on the area wearing then between two electrodes if being the power in the presentation graphs 1 to Fig. 4 curve chart.Y-axis 40 is a power, and X-axis 41 is gaps between electrodes width or separating distance.Attraction, electrostatic force between curve 43 expression electrodes 1 and the electrode 2.Power shown in the curve 43 in the gap 41 square be inverse ratio.Curve 46 is illustrated in and wears the repulsive force between two electrodes that electric current flows and produces when having magnetic field then.This electric current is near zero, up to this narrow at interval be enough to take place to wear then till.Then, along with the interval further reduces, it increases very apace.The process conditions of use are depended in beginning spaced points 42 that is used for wearing then and the position that is used for the spaced points 44 of full conduction.For example, according to Hishinuma, for the device that applies current potential with 0.1-2.0V, the beginning spaced points 42 that is used for wearing then is about 20 nanometers, and the point 44 of full conduction in essence is about 1 nanometer.Referring to paper of delivering by people such as Y.Hishinuna " Efficiency of Refrigeration usingThermotunneling and Thermionic Emission in a Vacuum:Use of Nanometer ScaleDesign " and the paper " Measurements of Cooling by RoomTemperature Thermionic Emission Across a Nanometer Gap " delivered by people such as Y.Hishinuna.Attraction and repulsive force equate on point 45.This is that device rests on the interval on its stable equilibrium position.If any interference to device makes the interval greater than point 45, then suppress the repulsive force of representing by curve 46 by the attraction of curve 43 expressions, generation oppositely moves to the trend of balance point 45.Equally, make at interval any interference,, and make device be returned to its balance point 45 once more by the repulsive force compacting of curve 46 expressions attraction by curve 43 expressions less than point 45.

Except former electrodes was provided with, electrode can also be arranged to the multilayer of all period interval.In addition, a plurality of unit of device can series, parallel or in parallel and series connection assembling, so that realize the higher level of power conversion.

In when operation, adjust CURRENT DISTRIBUTION in the flexible electrode 1 or density and towards the magnetic field of electrode 2, thereby electrode is placed on stable, the isolated equilbrium position.In an exemplary embodiments, when device of the present invention is used in heat to electric energy conversion or use electronics to wear then or thermion electron transfer when cooling off, when perhaps electronics is worn combination with the thermion transport power then, use the flexible metal thin as an electrode, can adjust the current density in the electrode 1 or the magnetic field of distribution and electrode 2, so that will be placed on stable, the isolated equilbrium position of 1 nanometer in the scope of 20 nanometers towards electrode.In another exemplary embodiments, when device of the present invention is used in from heat to cold conversion or when the thermion electron transfer produce power, can use the substrate of silicon wafer as one or two electrode, adjust current density or the intensity of distribution and the magnetic field of electrode 2 in the electrode 1, so that will be placed in stable, isolated, the equilbrium position of 1 nanometer in the scope of 20 nanometers towards electrode.

Device of the present invention can be used in and convert to heat cold or convert in the technology of electric energy.Thermal source can be a radiation source, as solar radiation, from the heat of environment, underground heat or the heat that produces by engine or animal metabolism, as but be not limited to heat from living person's body.Thermal source also can come autokinesis electricity, steam or inner internal combustion engine, or by combustion fuel in stove, as trees stove or coal stove or other types, perhaps their waste gas.When thermal source for example came the inner internal combustion engine of autokinesis or its waste gas, device of the present invention can be assembled in engine or the gas emission pipe as heat sink.Being used for burnt fuel can be wood, natural gas, coal or other inflammable fuel.The energy that is converted can be stored in as in the battery or directly to hand-held electrical equipment such as mobile phone, radio telephone or the power supply of other before-mentioned products.

Explain now operation when its device of the present invention during as refrigerator.Refer again to Fig. 1, will be applied between electrode 1 and the electrode 2 from zero voltage that increases by power supply 10.This voltage produces electrostatic force, and the tip of electrode 1 is drawn on the surface of electrode 2.Because this voltage increases gradually, thus flexible electrode 1 downwards towards the surface of electrode 2 according to roll mode bendings from most advanced and sophisticated 6 beginnings.This bending continues, up to electrode 1 near electrode 2 and wear electric current then and begin from electrode 2 till electrode 1 flows.In case arrive electrode 1, this is worn electric current then and just flows to the right in electrode 1 to connector 9a and 9b.Because this electric current flows in the I of Fig. 1 a direction, and the magnetic field that is produced by the permanent magnet in the electrode 2 nearby is in the B direction, and then power will work and upwards promote electrode 1.As long as the voltage from power supply 10 continues to increase, electrode 1 will flatten and make the surface coupling of profile and electrode 2.Thereby electrostatic force works and spurs two electrode surfaces toward each other, and comes the opposing force of the electric current in the self-electrode 1 to prevent that two electrodes are near must be less than predetermined space.

Device of the present invention is also similar as the operation of generator device, except thermal source 30 produces upper state from heat electrode 2 cold " hot electron " that moves than low-energy state in electrode 1.This be electronics from of the motion of an energy state to another energy state, between electrode, produce electric current.Electric loading 10 becomes and is used for the heat sink of the electric energy that so produces.

In the refrigerator operation, use electric energy from power supply, pulling hot electron principle electrode 2 cools off it thus.When operating as electric generator, thermal source 30 is used for electronics is promoted to power supply.

The present invention will further represent by following Example, and these examples are based on the philosophy of physics, and combine test data and measurement data and the pure science described here that obtains by the inventor.These examples are represented: (1) device of the present invention can use size public in industry and technology to design and make up, (2) the quantification power of Chan Shenging will cause the electrical property of desirable electrode gap and (3) device of the present invention can carry and transmit the electric energy that is converted effectively.These examples have proved above-mentioned three features of device of the present invention, and electrode gap is the heat-photovoltage transducer of about 100 nanometers less than the heat of 20 nanometers-wear transducer then and be used for wherein to be used for electrode gap wherein.

Example 1

For heat-wear transducer then, consider the following size among Fig. 1,2 and 3:

Then wearing area towards total covering of electrode is 1 square centimeter or 10 ^-4Square metre.The length L of flexible electrode 1 is 2 centimetres,, Breadth Maximum W is 1 centimetre.Length L and width W and Fig. 3 are defined in the same manner, but compare with the linearity configuration of Fig. 1, and electrode 1 bends to spiral-shaped.Electrode 1 towards the surface by surface patterning or have surface roughness, be 1/10th or 10 of total surface area Y to such an extent as to always wear area X (summations of all x) then ^-5Square metre.The permanent magnet material that uses in the electrode 2 has the field intensity B of 1.2 teslas (Tesla).Voltage V between the electrode is 0.15V.The DIELECTRIC CONSTANT of vacuum between the electrode 1 and 2 or thin inert gas equals 8.8 * 10 ^-12Farad (farads)/every meter.Suppose that the resistivity γ of flexible electrode 1 approaches the resistivity of copper, or be 1.7 * 10 ^-8Ohm-Mi (ohm-meter).The resistance in path of supposing the electronics from top connector 9a to another bottom connector 9b is for all concentrating on the electrode 1, and this is because compare with the remaining part of circuit, it must be approach with flexibility.The thickness t of flexible electrode 1 is 20 microns, is foil material therefore.

Be used to attract electrostatic force F _eFormula be 1/2 ε XV ²/ d ², wherein d is the interval between the electrode.The formula that is used to repel magnetic force Fm is ILB, and wherein I is an electric current, and L is effective average length of the electric current in electrode 1.

Then wear electric current I and obtain as the curve of function at interval from Hishinuma, and suppose that the work content of the coating 5 of Fig. 1 is 1.0eV, operating temperature is 300 Kelvin degrees.Referring to paper of delivering by people such as Y.Hishinuna " Efficiency of Refrigeration using Thermotunneling and ThermionicEmission in a Vacuum:Use of Nanometer Scale Design " and the paper " Measurements of Cooling by Room Temperature ThermionicEmission Across a Nanometer Gap " delivered by people such as Y.Hishinuma.

In Fig. 6, for the listed value in front, utilize the logarithmic scale of Y-axis relatively the electrode gap d of the arithmetic yardstick on X-axis to force function F _mAnd F _eCurve plotting.This curve transmission curve as shown in Figure 5 has only whole quantifications now.According to Hishinuma, stable balance point 45 is near 2.0 nanometers, and this is achieved 20 amperes and wears electric current then in desired interval.Referring to the paper of delivering by people such as Y.Hishinuma " Measurements of Cooling by Room Temperature ThermionicEmission Across a Nanometer Gap ".Along with interference tries to be offset the gap in some directions away from the stable equilibrium, restoring force is greater than 0.2 newton, and this is enough to overcome the crooked resistance of flexible electrode and back shifts it onto device equilbrium position.

Utilize at room temperature, the emission electrode of the voltage of 20 amperes electric current and 0.15V, this device can realize that 16 watts electrical power produces capacity or refrigeration capacity, this can be used as electric current (I) and multiply by in this example 0.8 the Peltier coefficient that uses and calculate, as described in the paper of being delivered by people such as Y.Hishinuma " Measurements of Cooling by Room Temperature Thermionic Emission Across aNanometer Gap ".The resistor power loss of flowing through in the flexible electrode 1 at this electric current is I ²γ L/tw.Utilize aforesaid value, calculate ohm power losses at 1.0 watts, this hypothesis is as power loss with as the source of heating electrode 1 and manageable.Also can replace from the heat of electrode 2, but when the chamber of device of the present invention was discharged into the level of 0.06mm Hg of argon gas body, estimation was not more than 1.3 watts with radiation, convection current and conduction to electrode 1 conduction.At last, exist in the electric heating amount that produces in the electrode 2, as described in the paper of delivering by people such as Y.Hishinuma " Measurements of Cooling by RoomTemperature Thermionic Emission Across a Nanometer Gap ", this equals voltage V and multiply by electric current I, perhaps is about 3.0 watts in this example.From 16 watts of obtainable dump energies that are converted energy is 10.7 watts.The computational efficiency of this correspondence 67%.

Therefore, we see the system level characteristic of this device, and based on the electromagnetic theory that is established, design that support can be worked and the device that is used to reduce are to realize high efficiency heat-wear then transducer.

Example 2

Polyfunctional another example of the present invention is in the selection of material.As described in the example 1, preferred embodiment comprises that metal foil is as one of electrode.Another embodiment can adopt monocrystalline silicon as flexible electrode.Although silicon seldom is considered to flexible material, it can be made with the roughness of 0.5 nanometer and 1 micron flatness on one square centimeter of surface industrial usually.Although silicon is harder than metal foil, as measuring by Young's modulus (Young ' s Modulus), its flatness represent need be very little bending with near the ideal flat degree.The power that is produced by the present invention will show can make the crooked micron of silicon wafer flatten it fully.In a word, use silicon to have several advantages as the basic material of flexible or two electrodes: (1) silicon wafer obtains in low cost easily, (2) silicon wafer has desirable roughness and flatness characteristic, (3) figure that adds low work function materials or material on silicon can be realized at an easy rate and frequently industrial, (4) resistivity of silicon prevents that flexible electrode reaction in contact or adosculation another electrode process of the present invention is too fast, (5) the desirable resistivity of silicon can be controlled arbitrarily by mixing, and this also is industrial commonly used.In a word, design of the present invention can be used in the semi-conductor industry common obtainable material and technology and realizes.

In order to represent to use the of the present invention example of silicon, consider Fig. 8 as flexible electrode.Here, electrode 1 is made of paper tinsel backing 62 and silicon substrate 65.The shape of the electrode 1 among Fig. 8 is a triangle, near the optimum index shape described in the example 1.Silicon substrate 65 can cut down from standard wafer, uses electroconductive binder to bond on the paper tinsel backing 62 of electrode 1 then.Electrode 2 ' among Fig. 8 constitutes in the same manner with the electrode 2 among Fig. 1, is that not shown magnet and hypothesis are provided with dividually.By magnet and electrode 2 ' are separated, can use with Fig. 8 in electrode 1 identical materials and technology constitute electrode 2 '.The flow direction of arrow 61 expression electronics.Because the paper tinsel backing has the conductance higher than silicon, so will the flow path of minimum resistance of electronics.Therefore, electronics is crossed the paper tinsel backing of electrode 2 ' from right to left through conduction flow, vertical current is crossed the silicon substrate of electrode 2 ' then, shown in the part of arrow 67, electronics is through wearing then or thermionic emission flows to electrode 1 in a vacuum from the surface 64 of electrode 2 ', shown in the part of arrow 66 then.In case electronics arrives electrode 1, they vertically flow through silicon substrate once more, shown in the part of arrow 68, and arrive the paper tinsel backing 62 of electrode 1 at last.Then, they flow through low-down resistor path through the paper tinsel backing 62 of electrode 1 from left to right.By the magnetic field interaction of the electron stream of arrow 61 directivity ground expression and near permanent magnet, not shown in Fig. 8.

In this example, the total thickness t s of silicon is 0.5 millimeter of every wafer or 0.25 millimeter, and this is an industrial standard thickness.Doped silicon material is to have the resistivity r of 0.02 ohm-cm _s, this also uses always.The Young's modulus E that is used for silicon _sBe known as 47 giga pascals (Pascals) or 4.7 * 10 ¹⁰Pascals.For the wafer of one centimetre lateral dimension, silicon wafer is carried out being polished in industrial routine 0.5 nanometer of surface roughness, and realize 1.0 microns surface flatness d _x

Fig. 7 represents and the influence to power of the silicon of Fig. 6 contrast.Magnetostatic power is limited to 0.6 newton, and is very little because the gap becomes.Therefore the resistance limits electric current of silicon limits magnetostatic repulsive force.And very narrow gap will cause all service voltages to descend in silicon resistor, and approach no-voltage on whole gap, this means for very little clearance gap, and electrostatic attraction is zero.

In order to quantize these effects, the maximum current that consideration can be flowed in native system, this is the service voltage V of being cut apart by rule resistance, equals r _st _s/ Lw.For the length and the width of the voltage that applies in example 1, electrode, when having silicon, maximum current is approximately 50 amperes.In addition, when electric current during near this 50 ampere level, service voltage will all descend in whole silicon, and not realize voltage difference between the apparent surface of electrode.

Answer difference power among Fig. 7 is quite big.According to this figure, be offset the restoring force of desirable interval 0.1 nanometer generation greater than 0.05 newton.This restoring force is much larger than the required bending force of leveling electrode 1, and much larger than the parallel required bending force of realizing with electrode 2, as present calculating.

In order to flatten one micron fold in the electrode 1, need 40d _xE _sWt _s ³/ 12L ³Power.This power calculates 0.003 newton.If electrode 1 and electrode 2 have opposite fold, then required power is the twice of this amount or is 0.006 newton that this is much smaller than 0.05 newton of obtainable restoring force for maintenance gap in 0.1 nanometer range in desired gap.

Have better than among the Fig. 6 with metal foil material of force characteristic among Fig. 7 of silicon electrode material, because: (1) causes vibration or accidental movement not too greatly to such an extent as to have the power of silicon, this will damage or shake this system, as under the situation of simple metal electrode, (2) the bigger flatness of silicon wafer and metal forming allow this system more to approach desired procedure point and start, (3) resistance of silicon prevents to form big electric current in little regional area, this big electric current will at high temperature produce and evaporate the infringement electrode material, (4) hardness of silicon has reduced the amount of exercise of material, thereby keep the gap along with time lapse, therefore reduced fatigue, the risk of breaking or being out of shape, (5) higher hardness of silicon and flatness are guaranteed can keep the gap existing under the situation of localized variation, and this will reduce exponential shape, the uniformity of thickness of electrode, and other parameters of material and design change in the needs of precision.

Example 3

Fig. 9 a represents how this device can be used for another example of the dissimilar power conversion of so-called heat-photovoltaic.In this example, thermal source 71 makes photoemissive material 73 pass gap 74 beginning to light-sensitive material 75 radiant lights, and as by shown in 72, gap 74 is less than light wavelength, and then produces by the electric current shown in the arrow 76.In this example, photoemissive material 73 can be tungsten or other photoelectric emission metals.Light-sensitive material 75 can be the alloy of silicon, selenium, gallium, arsenic, indium or some combinations or these materials.The Len req in gap 74 less than the minimum wavelength by photoemissive material 73 emissions, perhaps is approximately 100 nanometers usually, so that realize the near field optic condition.In this case, photoelectric emission electrode 73 be rigidity, smooth and in the gap one side polished.Photoactive electrode 75 has enough flexibilities so that level to the big uniform gap of about 100 nanometers.

During realizing, the hot photovoltage of the present invention that is illustrated in Fig. 9 b produces the curve of the power of stablizing the gap.Thereby do not have influence, spring force or similar external force owing to electrostatic force under these distances is too little and can replacedly between two electrodes, produce attraction.Spring force has the linear quantity as the function of clearance gap.By because the electric current that exists magnetic field to produce by arrow 76 expressions produces the balance repulsive force, as in the example in front, not shown in Fig. 9.This electric current is to produce by the emission reception photon of light-sensitive material from electrode 73, but is used for producing and maintenance uniform gap interval, described in example in front.Repulsive force 46 ' among Fig. 9 b is proportional to hot photovoltage electric current, and the performance of this power is with respect to being derived in " Micron-gap ThermoPhotoVoltaics (MTPV) " by people such as R.DiMatteo at interval.

Example 4

Figure 10 a-10c represents the design among assembly drawing 8 how or Fig. 9, and wherein a plurality of device connected in electrical series are connected in parallel with heat and are in the same place.In addition, Figure 10 a-10c represents how to use that widely used manufacturing technology increases a plurality of these devices in proportion in semi-conductor industry.Figure 10 a represents the base substrate 82 of a side of fixing a plurality of devices.When this device as heat-wear then cooler when work, cool off this substrate 82, perhaps when as the heater operation of electric power converter, heat it, perhaps radiation when this device is operated as heat-photovoltage transducer.Figure 10 b represents the end view of film stack, and wherein this stack can be made a plurality of devices on a substrate 82.Substrate 82 by silicon, carborundum, aluminium, GaAs or in industry similar backing material commonly used make.Layer 88 is oxide or similar film, and it still still allows heat conduction with the first metal layer 83 and substrate layer 82 electric insulations.The first metal layer 83 is highly conductives, and is thick relatively layer, is used for heat-satisfy dress operation and delivers electric current or be used for heat-photovoltage operation and the delivery heat.Layer 83 can for example be copper or cheap metal, as aluminium.Clearance layer 84 is other films at metal or the interface that preferably is suitable for the gap.Under the heat-situation of wearing then, this layer 84 can be a gold, thereby protects its not oxidized and pollute, because gold is an inert metal.Under the situation of heat-photovoltage operation, clearance layer 84 can be the material of tungsten or height photoelectricity radiation, so that substantially heat is changed the photon to traverse gap.Layer 85 is sacrifice layers, removes it afterwards after the film stack of making layer 83,84,84 ' and 83 '.This sacrifice layer provides structure to abandon comprising the supplement film of second electrode.Remove after the sacrifice layer 85,, between layer 84 and 84 ', form the gap by Fig. 5,6,7 or the previous described dynamic balance of 9b.Layer 84 ' is optimized with from this gap received energy, and protective layer 83 ' is not contaminated or oxidation.In heat-satisfy under the situation of dress operation, layer 84 ' can be made of gold.Under the situation of heat-photovoltage operation, layer 84 ' can be as the 75 described light-sensitive materials of the material in Fig. 9 a.Layer 83 ' is the electric current delivery layer that electric current is delivered out device, and its material can be copper or aluminium.In case use semiconductor technology to make the film stack shown in Figure 10 b, be electrically connected in series, shown in Figure 10 c.In this case, use line to be electrically connected to the adjacent substrate electrode from top electrodes with line bonding 86.The electric input and output of a plurality of devices of electric wire 89 expressions.Sacrifice layer 85 can by can utilize treat liquid, gas or by metallization or with heat of vaporization it and any material that can remove constitutes.

In case make a pair of device shown in Fig. 8,9a or the 10c, then they can be inserted in the heat exchanger encapsulation, for example, shown in Figure 11 a.Here, electrode pair or electrode pair array 92 from a fin 93 to corresponding fin 93 ' warm-up movement.Fin 93 all physically is connected on first hot plate 90, and corresponding fin 93 ' all physically is connected to second hot plate 90 '.Hot plate 90 and 90 ' represents to be used for by less hot side 93 and less cold side 93 ' are flocked together the hot side and the cold side of heat-wear then or heat-photovoltage operation respectively.Hot plate 90 and 90 ' is made by the material with high thermoconductivity, as copper, aluminium or silicon.Rectangular tube 91 is provided for sealable wall of a container, and is made by the material with low-thermal conductivity, as glass, (Teflon) Teflon, polyimides or similar material with enough compressive strengths.Low-thermal conductivity allows the thermal insulation of hot plate 90 and cold drawing 90 ', the efficient of enhanced system.If plate 90 and 90 ' has the thermal expansion character of mismatch with respect to tube wall 91, then boundary material 95 can be made of the compatible rubber of soft vacuum, as fluorubber (Viton) or Teflon, polyimides or at the similar material that is used to make O shape ring of the industry that is used for these types sealings.If r hot plate material 90 and 90 ' and the thermal expansion character of pipe wall material 91 about equally, then boundary material 95 can be hard bonding material, as glass dust, epoxy resin, scolder or welding material.Figure 11 b represents how to set up magnet arrangement, and the heat exchanger of this magnet arrangement encirclement Figure 11 a encapsulates and provide the required magnetic field, gap in the electrode pair 92 that forms Figure 11 a.But permanent magnet 101 is fixed in the straight-flanked ring of magnetic penetration material 100.Permanent magnet 101 can be made of the standard material that is used for magnet, as the alloy of iron, cobalt, nickel, neodymium, boron and aluminium.Usually, this alloy is sintered into granule, resets into desirable shape with adhesive material then, realizes the high magnetization that keeps when being magnetized with box lunch.Straight-flanked ring 100 can be made of the same steel of using in transformer, so that magnetic permeability that permanent magnet 101 produces and magnetic field maximization.This material can be iron-rich steel, perhaps for example is some other alloys of iron, cobalt, nickel, chromium and platinum.

Figure 13 represents how magnet assemblies is increased in proportion with the receiving heat-exchanger array.Magnetic permeable material 110 is arranged to cell structure, and array of voids is wherein arranged, so that insert the device shown in Fig. 8,9a, 10c or the 11a.Permanent magnet 101 is inserted in each unit, thereby produces magnetic field between magnet.

In the manufacturing process of height miniaturization, the magnet array of Figure 13 can be structured on the top of substrate of Figure 10 c and the electrode pair that is arranged so that Figure 10 c is comprised in the space of magnet array of Figure 13.Under the situation of miniaturization, permanent magnet 101 and permeable material 110 can use standard technology as evaporation, sputter or directly be plated on the substrate and as described in the metal membrane to grow of material, be similar to the structure of the electrode film among Figure 10 b.

The device that Figure 14 is illustrated in Fig. 8,10c, 11a as heat to the required adjunct circuit of the heat of electric power-when wearing the transducer operation then.Because device 120 of the present invention needs mobile electric current, forms so that realize the gap, does not therefore have this gap before electric current flows.In Figure 14, external power source 122 provides the electric current that can be used for forming the gap in the device 120.In case the gap forms and heat puts on an electrode, then produce the temperature difference with respect to another electrode.In case this temperature difference exists, then thermionic heat-wear then and flow beginning produces extra current.In case heat-wearing electric current then flows, then it keeps the gap in the device 120 individually, as previously mentioned.Now, no longer need external power source 122, therefore can close it by switch 123.Therefore, the circuit of Figure 14 is the heat that is used for heat-wear the then start-up circuit of conversion of the power supply of electric loading 126.Remove thermal source again and when rebuilding afterwards, switch 123 can be applied for external power source 122 again.

Example 5

Figure 12 a represents to be used to encapsulate another example of the electrode of this device, how to be similar to when the needs vacuum environment the little electricapparatus of packing system (MEM).Top and bottom hot plate 130 can be made by silicon, and can scale off from the standard silicon wafer.Silicon has high thermoconductivity, therefore is very suitable for the hot path of this device.The wall of encapsulation 132 is made of glass, and it has the low-thermal conductivity list and has the thermal coefficient of expansion that approaches silicon hot plate 130.Because glass has similar thermal expansion character with silicon, therefore can use known glass dust bonding method again between 130 and 131.The glass dust bonding is generally used for two glass workpieces are bonded together, but also glass can be bonded on the silicon, because be exposed on the silicon face of air formation glass silicon dioxide layer naturally again.The result forms stone and tight seal between glass and the silicon, be easy to bear the pressure of vacuum.In MEM industry, use similar Vacuum Package to be used for accelerometer, oscillator and HF switch.Plinth course 131 is also made by silicon, and can be bonded on the hot plate 134.Metal level 134 on top and the bottom hot plate 130 is used for being electrically connected inner electrode is formed of encapsulation, does not need through hole or other mechanisms, and these through holes or other mechanisms will limit the life-span of bulb and other vacuum products.

Figure 12 b represents how electrode can be included in the Vacuum Package of Figure 12 a.Electrode pair 145 corresponding diagram 8,9a, 10c.Thermal interfacial material 141 with heat to or from the exterior conductive of each electrode to encapsulation, and provide soft formation to electrode, be used for moving once more in operating process.The example of thermal interfacial material 141 is from the clearance pad of Bergquist company, from the vacuum grease of Apiezon or Dow chemical company, from the carbon nano-tube compound of MER company or other soft materials that mix with thermal conductive particles.Bonding material 143 is bonded to glass wall on the silicon hot plate, and this examples of material is epoxy resin and glass dust.The bottom of lead connection electrode is to top board and base plate.The examples material that is used for this lead is dull and stereotyped paper tinsel or the cylinder line that is made of copper, aluminium or other electric conducting materials.Copper layer 134 allows electric current to flow through very widely has resistance silicon plate 130. silicon plates can use pump, arsenic or analogous element to mix, so that increase its conductivity and the ohmic loss minimum that makes the electric current that flows to encapsulation.The filament 140 that obtains when voltage puts on its copper pad 134 has warmed up, just as the filament in the bulb.Suitable material such as caesium chromate are coated on the filament 140, thereby allow the caesium steam to be discharged in the Vacuum Package.The caesium steam is in case release has just realized following function: (1) is by producing solid with these gas reactions, inner remaining air and other gases of discharging encapsulation after sealing, (2) remove along with the gas that leaks into time lapse in the chamber by similar reaction, (3) on clearance surface, be formed naturally caesium individual layer or sub-individual layer at electrode 145, produce low work content layer thus, launch so that promote electronics to pass the gap.

Other examples that use magnetic force to distribute

The basic example of front represents that the heat-system of wearing then of how design work is to realize cooling or power transfer.By changing one or more parameters of using in previous example 1 and the example 2, be easy to design other examples.Can be by the one or more clearance distances that increase in the following change: (1) increases magnetic field, and (2) reduce voltage, and (3) increase electric current, and (4) increase the length of flexible electrode, or (5) reduce the area of flexible electrode.By carrying out opposite change, can reduce clearance distance.

It should be noted that several characteristic described here is optional, perhaps need not add the manufacturing complexity and just can realize.Because industry can not be made working heat greater than nano-scale-wear transducer then, does not therefore know in the agenda evil of large-size.For example, referring again to Fig. 1 a-1b,, then do not need low work content layer 5 if the gap is smaller a little.Reinforcing material 5 ' is to be easy to realize that by the surface roughness after the polishing this produces peak and paddy naturally just, and this is known strengthening in the electronics emission.If select the resistive material of electrode 1 or 2, also can not need to support most advanced and sophisticated 6.The electrode of composition among Fig. 2 a also provides peak and paddy to reduce electrostatic force, also can realize by the natural surface roughness after the polishing.At last, if evidence in the air gap, pass journey then, then also can not need vacuum chamber 20.In addition, the exponential shape of electrode 1 can be easier to be approaching, so that make triangle.All these complex characteristic (composition among most advanced and sophisticated 6, layer 5, reinforcing material 5 ', Fig. 2 a, the curved shape and the vacuum chamber 20 of electrode 1) all are comprised in the disclosure, are used for finishing being presented in the required thing of final manufacturing.

Device disclosed herein is general when the various types of electronics of structure are tied in the electronics industry that needs the uniform gap between the electrode.For example, the bad heat-insulating thermoelectric device that has between hot side and the cold side can adopt the disclosure.Vacuum space on the top of thermoelectric stack be every can providing thermal insulation preferably, and the disclosure is provided for realizing the means in this gap, and be independent of thermion or heat-wear then method or with its combination.

Relate to other elemental discussion and can occur together the time about the last comment of the property easy to manufacture of device disclosed herein on two very level and smooth surfaces.It is known that to be used for two attractions that smooth surface keeps together be Casimir power and Van Der Waals power.These power wish still that enough by force to keep two electrodes of the present invention together before applying voltage they are eager to excel in whatever one does to the desirable interaction and the domination that influence aforementioned electrostatic force and magnetostatic power in operating period of the present invention.Yet these Casimir power and Van Der Waals power can be guaranteed to connect before this device two electrodes and be in during complete surface contacts by applying voltage.In this case, operation of the present invention only need be passed through two several nanometers of electrode separation.These Casimir power and Van Der Waals power also help to eliminate the needs of the insulating barrier 4 of Fig. 1, have further simplified design of the present invention.

Can be in parallel and being connected in series in a plurality of unit of this device, mates with power supply or realize the two so that realize the higher level of power conversion or make voltage.

The laboratory and the analog result that are used for magnetic force embodiment

Utilize copper as the paper tinsel backing in the assembling of the electrode structure of microelectronics assembled in lab Fig. 8, and this electrode pair is placed on the inside of magnet arrangement, shown in Figure 11 b.Thermocouple is fixed on each electrode, so that produce the voltage that is proportional to temperature, and whole device is placed in the vacuum chamber, and this vacuum chamber is evacuated to the vacuum pressure of 1E-3 torr.When by external power source with 1.1 amperes of active electrodes to the time, the relative temperatures that produce 3.0 degree between two electrodes are poor, are sides of emitting electrons than cold side.Regard then during in taking following behavior any one that to remove this relative temperature poor as: (1) replaces vacuum with atmospheric nitrogen, (2) come this chip of Dunhua by the disconnecting external power supply, or (3) make reverse direction current flow to increase the attraction contact force between the electrode, replacement formation gap.Each that suppose these three behaviors removed heat-wear then effect.This design of also loading of the computer simulation of the electronic mechanical system of this device and the electrical characteristics of viewed electrode successfully produces heat-wear then gap.

The electrode design of example 7-bending

Figure 15 a represents to realize to be used for big another design of wearing area then that heat-wear then, heat-photovoltage or hot electron are used.In this design, one of electrode 157 is shaped as has convex curvature a little, and another electrode 158 can be smooth or protruding.This curvature is easy to realize that by the combination with the material layer that is bonded together it has different thermal coefficient of expansions, also is called " bimetallic " structure.When being bonded together under the temperature that two kinds of materials is being different from operating temperature, these material coefficient of thermal expansion differences cause the curvature of stack.Do not limit the scope of the invention, Figure 15 a represents to use solder cream 151 that thick double-metal layer 150 is bonded to example on the copper film 152.Copper film 152 can be deposited on the top of titanium adhesive phase 153 by evaporation or sputter, and this adhesive phase 153 is deposited on the top of silicon substrate 154 equally.Clearance side at silicon substrate is another titanium adhesive phase 155, can be then the last clearance plane of gold to layer 156 and caesium individual layer or be used for the similar material of heat-wear then application, the photosensitive or photoelectric material that has the material that is used for high Seebeck that heat-electricity uses or Peltier coefficient or be used for heat-photovoltage application combines.

Figure 15 b represents the annulus that obtains from this curvature when two electrodes are fitted together.First interior zone 149 is physics contact zones, in heat transfer is used, in order to prevent that heat from flowing from hot side direction cold side, usually first interior zone 149 must be minimized or eliminates. second interior zone 148 expression electronics are worn the zone then, wherein the voltage that applies of the electronic response below Fermi level or thermal excitation and can cross this gap.Use for heat-wear then and heat-photovoltage, this zone must be minimized usually, but, if clearance plane is that then it still can be used to reduce because the heat conduction that photon causes because photon moves and presents low electronics heat conductivity usually but the semiconductor of high lattice heat conductivity to layer 156.The expression of the 3rd interior zone 147 is used to be higher than the electronics of the electronics of Fermi level and wears the zone then.These electronics are beneficial to desirable heat transfer usually for use in heat-wear application then, and except being produced by Seebeck and Peltier effect, also help thermoelectric applications by heat transfer mechanism is provided.But the zone that the photon that perimeter 146 expression electronics do not transmit substantially transmits through overshoot.Have only this perimeter of photon transmission to be beneficial to heat-photovoltaic effect, but for thermoelectric and heat-wear effect then to be harmful to, because its allows from hot side direction cold side radiations heat energy transmission, particularly during high temperature is used as the power generation.

In the following discussion, we will illustrate by adding separating force how to improve this general meander electrode invention, and wherein said separating force reduces or eliminates contact area 149, and the existence of contact area 149 is used for all heat and all is harmful to.Yet, be further noted that with claimed to be, even do not separate contact area that the design of Figure 15 also has big usability.For example, in thermoelectric applications, need very big effort make the electron stream maximization of passing knot and photon stream is minimized.In the prior art design of most of thermoelectric devices, all tie region allow heat and flow of electrical power.In the improvement of Figure 15 design, have only contact area 149 to allow because total hot-fluid of photon and electron production, 148 of second interior zones allow the electronics hot-fluid, and second interior zone 147 utilizes some heat-worn effect improving then thermoelectric effect.Attention is in this structure, and whole regional 149,148 and 147 can be used for flow of electrical power.Therefore, Figure 15 represent with respect to greater than the zone of hot-fluid in the sizable improvement that has aspect the flow of power, thereby improved thermoelectric design.

For heat-photovoltage and heat-wear application then, can also wish to keep in touch zone 149 and be used for lower one-tenth the design, this does not need dynamic clearance control or even vacuum.

The meander electrode system of Figure 15 can be arranged in the vacuum chamber with any gap formation exciter 160, as shown in figure 16.Here, another electrode also can be with or without exciter 161.This vacuum chamber constitutes and is similar to Figure 12 b with glass wall 142 and silicon top and bottom 130.Copper film or plate 134 are used for power is put on this device or removes power from this device, and this depends on operator scheme.Copper cash 163 and scolder 162 are connected to electrode on inner panel or the film.

The meander electrode design that example 8-have Lorentz power is separated

Figure 17 is illustrated in and exists the gap of how to use the Lorentz power that acts on the electric current that flows in the extension board 159 to constitute among Figure 15 under the situation that applies the magnetic field (not shown) to form exciter 160.Owing to the electric current in two extension boards 159 in the opposite direction flows, therefore between two electrodes, produce repulsive force, this can utilize Van der Waals, electrostatic force, elastic force and other attractions to come balance, described in embodiment in front.

The meander electrode design of example 9-have thermal expansion force

Figure 18 a, 18b and 18c represent to be used for the different conditions of the operation of thermal actuator, and wherein thermal actuator forms exciter as the gap shown in 160 among Figure 15.In this example, bimetallic material 150 and 154 has different thermal coefficient of expansions.Support 164 is placed on the edge of electrode so that contact point to be provided, by this contact point, bimetallic power can promote with in be formed centrally the gap.

At first, this device is in the state shown in Figure 18 a.Here the center of two electrodes-contact with each other is similar to the design of Figure 15.When connecting this device, then will on one or two electrode, produce heat, this will cause at least one electrode to flatten.The heat that is used for this process can come from resistance or come from thermoelectricity, heat-wear then or any heat transfer of heat-photovoltaic effect, perhaps can be the combination of these heats.Figure 18 b represents that electrode is flattened to the state that forms the required degree in desirable gap.Here, in be formed centrally this gap.If any interference causes this process that flattens to form greater than desirable gap.Shown in Figure 18 c, then wearing electric current then will disappear or stop, and reduces electrode temperature and increases its curvature, and be returned to the state of Figure 18 b naturally.As previously mentioned, this device will automatically form and keep desirable gap, and having does not need array or exciter, a plurality of control system, loses spacer or make the advantage of the previous embodiment of areal deformation.

It can be enough sources of the undesirable heat delivered from hot side to cold side that support 164 among Figure 18 is constituted as them.Figure 19 represents improved structure, and its medium-height trestle 164 does not produce the short hot path from a side to opposite side, and hot path is extended a wall through to vacuum chamber 20.

Figure 20 represents how to simplify the meander electrode that makes up with the thermal actuator separator for low-cost and easy manufacturing.In the design, vacuum chamber 20 has virtual electrode as top and bottom, and wall 164 is finished encapsulation.In the design, increased total attraction from the vacuum pressure of chamber 20, the bimetallic repulsive force of thermal expansion that this total attraction must form by the different materials by layer 150 and 154 comes balance.Layer 156 is provided for the suitable material of thermoelectricity, heat-wear then or heat-photovoltaic effect.In this figure, it is cold side that electrode 158 is decided to be, and the heat that moves to hot lateral electrode 157 is provided for flattening electrode 157 and at the center-form the thermal expansion in desirable gap.The design of Figure 20 has realized forming with the described identical automatic backlash of reference Figure 18.

When not forming or being completed into the gap, the design of Figure 20 and Figure 18 has center-contact.For heat-wear system then, after the gap formed, this contact may damage the atom smoothness on surface, reduced and wore then.In order to prevent this problem, Figure 21 shows and uses the replacement design with external heat source 167 towards another electrode 157 meander electrodes 158.In case form desirable gap, then the supply capability of heat source 167 can be reduced to and only be used to the level that keeps.In this process, should note how eliminating electrode 157 and contact to prevent the infringement of opposite to clearance surface with 158 physics.

The set of example 10-meander electrode design

How Figure 22 shows and will gather on big substrate and the big Vacuum Package from a plurality of devices of the design of Figure 15-21.Replace to constitute single device, each has they self vacuum chamber, and this design can be gathered a plurality of top electrodes of Figure 15-21 on the substrate 173, and a plurality of bottom electrodes are gathered on another substrate 174.The support (Figure 22 is not shown) that is used for electrode pair can be established to entire top or bottom electrode 170.The material 171 that is used to gather substrate can be the material of vacuum compatibility, as polyimides, and by in 174 stacked on top 173, uses compatible their external margin of adhesive seal of vacuum then, can constitute Vacuum Package.Expression symbol " M ", " P " and " N " that is used for electrode among Figure 22 is used to refer to be respectively applied for metal, p type and the n type that hot electron is used.The setting of all the n types on all the p types and 174 on 173 also can the design of productive set hot electron.For heat-wear then, a side will be an emitter, opposite side is a collector electrode.For heat-photovoltage, a side will be photoemissive, and opposite side is photosensitive.Be electrically connected 165 and 166 the device that is electrically connected on electric loading or the power supply is provided.Lead connection 172 provides independent connection or the series connection and in parallel being connected of the serial or parallel connection of electrode pair, and this mates with this load or power supply best.As shown in figure 22, all electrode pairs are connected in series.

Because silicon wafer is the current popular substrate of producing in batches that is used for electronic circuit, Figure 23 represents how individual devices is gathered on the silicon wafer.In order to allow single electrode crooked and irrelevant with surround electrode, dotted line 176 is illustrated in the back side cutting groove of wafer.It is the bending point that is used for the thermal expansion campaign that these grooves are decided to be, but still keeps enough rigidity to be convenient to top or the bottom of wafer as vacuum chamber.The point that this groove also reduces adjacent electrode disturbs, because can optionally undope silicon near dotted line 176.In this mode, use silicon wafer also to allow to constitute the film stack shown in Figure 15 on the wafer in Figure 23.

Example 11-the be with or without test that is used for curved design of thermal flexure power

Cooling device is created as the electrode 157 and 158 with 1.0 square centimeters, and shown in Figure 15 a, and its behavior is shown among Figure 18.Metal level 150 is a brass, and its thickness is 0.25mm; Semiconductor layer 154 is that thickness is the silicon of 0.27mm, and it is doped to realize the resistivity of 0.003 ohm-cm (ohm-cm); Adhesive phase 151 is at 400 ℃ of metallization and mobile solder cream; Silicon-metal adhesive phase 155 and 153 is that thickness is the titanium of 20nm; Clearance plane is 20nm gold films on the side to layer 156, and this 20nm gold film has towards the thermoelectric sensitive layer of the 30nm bismuth in this gap.Known bismuth have 90 microvolts/℃ the Seebeck coefficient.Support 164 among Figure 18 is by the Kapton of Du Pont ^TMPolyimides constitutes, and its thickness is 25 microns, and on each of four angles between the rectangular electrode in Figure 15 a 157 and 158, its cross-sectional area is about 0.25mm.Then this assembly is placed between the spring-loading fixture in the vacuum chamber, wherein vacuum chamber is evacuated to 0.001 torr.Between electrode, apply the voltage of 0.245V, this assembly is heated to above 27 ℃ of environment, and produces 0.8 ampere electric current.Suppose that nano gap forms, because only need 0.014V just to be easy to form 0.8 ampere, and electrode is known as contact at ambient temperature.Believe that auxiliary voltage is the voltage between the nano vacuum gap.Thermocouple is placed on each back side of two electrodes, and 9.6 ℃ temperature swing is observed in the polarity inversion of each voltage and current.When electrode contacts, only observe 0.13 ℃ temperature swing.Therefore, the existence in gap makes the temperature swing increase by 74 times.

Should be emphasized that the example that the foregoing description of device of the present invention and technology, particularly " preferably " embodiment are just implemented only is used for the clear principle of the present invention of understanding.Under the situation that does not break away from the spirit and scope of the present invention, can design and/or make a lot of different embodiment of self-align electrode device described here.Intention makes all such modifications and changes all to fall in the scope of the present disclosure and by appended claims and protects.Therefore scope of the present invention should be limited by content shown in the claims.

Claims (88)

1, a kind of device that comprises a pair of towards electrode or electrode assemblie, wherein the attraction in electrode or the electrode assemblie distributes and equates but opposite repulsive force distributes and works simultaneously, thus they all or part towards the stable balance of setting up two electrodes between the surface at interval.

2, according to the device of claim 1, wherein in the device normal work period by intrinsic CURRENT DISTRIBUTION, voltage distribution or Temperature Distribution or these any combination, produce and keep at least one attraction or repulsive force to distribute.

3,, wherein remedy or offset not enough or excessive on the size of described attraction and repulsive force from the additional force of the distribution of spring or porous material according to the device of claim 1.

4, according to the device of claim 1, by little electricapparatus system's (MEM) technology and designing technique manufacturing.

5, according to the device of claim 4, wherein constitute by the cantilever design array towards one or two of electrode, described cantilever design array is by carrying out the combination manufacturing of film growth and sacrifice layer removal on the standard industry substrate.

6, according to the device of claim 1, also be included in and produce the circuit that the gap forms starting current in this device, thereby produce the interval to keep the temperature difference between two electrodes or the electrode assemblie, wear electric current then up to electronics and can be used as till the gap produces electric current and be acquired.

7, according to the device of claim 1, wherein form low work content layer by the combination that in Vacuum Package, comprises caesium or barium or caesium and barium, described Vacuum Package is created in towards one or two of electrode and goes up the steam of formation individual layer, sub-individual layer or a plurality of individual layers.

8, according to the device of claim 7, wherein alkali-metal compound is attached on the filament, this filament produces alkali metal by heating, evaporating and be concentrated in the container.

9, device according to Claim 8, wherein alkali metal is caesium, this compound is caesium chromate or bismuth-cesium alloy.

10, device according to Claim 8, wherein filament comprises connector, this connector passes through the hot side of doped silicon with electric mode route, thereby eliminates line hole and through hole.

11, device according to Claim 8, wherein filament is electrically connected with this device is in parallel, and is designed to disconnect after alkali metal is evaporated its circuit.

12,, thereby comprise the material of removing undesirable gas as getter during fabrication or subsequently according to the device of claim 1.

13, according to the device of claim 12, wherein this getter material is selected from by titanium, caesium, barium, sodium, potassium and the group that constitutes thereof.

14, according to the device of claim 1, wherein electrode is arranged in a plurality of isolated layers.

15, a kind of device of a plurality of unit of device of the claim 1 that comprises series connection assembling.

16, a kind of device of a plurality of unit of device of the claim 1 that comprises assembling in parallel.

17, a kind of device of a plurality of unit of the device that comprises claim 1 is fabricated on the stack of wafer or wafer, thus the combination that realizes making efficient or packaging density or make efficient and packaging density.

18, a kind of device of a plurality of unit of the device that comprises claim 1, wherein electrode be placed on less heat sink on, these are heat sink all is connected to big heat sink on, described bigger heat sink accumulation flows into or flows out the heat of a plurality of devices.

19, according to the device of claim 18, heat sink extend and be connected to big heat sink fin along the Different Plane direction wherein less heat sink comprising from big.

20, a kind of device of a plurality of unit of the device that comprises claim 1, wherein electrode or electrode assemblie are comprised in the vacuum tank, and this vacuum tank has two hot paths that are incorporated into container and draw from container.

21, according to the device of claim 20, wherein the barrier material of two hot paths is glass, pottery or the other materials with low-thermal conductivity.

22, according to the device of claim 20, wherein the hot path material is made of silicon, copper, aluminium or other materials with high thermoconductivity.

23, according to the device of claim 22, wherein said container is made of wall, and this wall is made of glass, and hot path is a silicon, and wall and hot path use glass dust technology to be bonded together, thereby forms vacuum seal.

24, according to the device of claim 22, wherein silicon materials are electrically connected with electrode allowing by high doped, thereby flow through silicon and eliminate the needs of line hole, through hole or the similar connection of this internal tank.

25,, wherein use soft hot material, thereby when electrode conduction heat or conduction come the heat of self-electrode, allow the electrode light exercise at the same time with enough pyroconductivities according to the device of claim 22.

26, according to the device of claim 25, wherein this hot material by liquid metals, do not have silane polymer, contain the compatible grease of mixture, vacuum of carbon nano-tube or the suspension of the heat conduction particle in soft or fluent material constitutes.

27, according to the device of claim 22, wherein the connecting line to electrode or electrode assemblie fixes with scolder, solder projection, ultrasound line bonding, conductive epoxy resin, solder cream or contact pressure.

28, according to the device of claim 1, comprise a plurality of permanent magnets and permeable ferromagnetic material, they are arranged to have the space that comprises magnetic field, are switched on and have electric current when flowing through at device, and this magnetic field allows forming the gap in the device separately.

29, according to the device of claim 28, wherein permanent magnet is arranged on the grid inside that is formed by permeable magnetic, thereby generation device array, this device array have make heat be transmitted in this array a side and make heat be transmitted to a side of this array outside.

30, according to the device of claim 28, wherein permanent magnet and/or permeable magnetic be in iron, cobalt, nickel, chromium, platinum, aluminium or the neodymium a kind of, be their alloy or their reorganization sintered body.

31, according to the device of claim 1, wherein at least one electrode surface has curved shape.

32, according to the device of claim 31, be that atom level is level and smooth wherein towards electrode.

33, according to the device of claim 31, wherein electrode is closed in the vacuum chamber.

34, according to the device of claim 31, wherein electrode is closed in the chamber that is filled with inert gas.

35, according to the device of claim 34, wherein inert gas comprises argon or nitrogen.

36, according to the device of claim 31, wherein select in the curved shape be implemented in the small area of contact on the central point and surround central point than large tracts of land, these areas are used for that electronics is worn then or photon is worn then or photon stops or these any combination.

37,, wherein surround the gap of area realization 0.5 to 1 nanometer of central point, by stopping that photon transmission or electronics are worn then or these combinations are used for the heat isolation according to the device of claim 36.

38, according to the device of claim 36, the area that wherein surrounds central point is realized the gap of 1 to 10 nanometer, is used for thermionic heat-wear then.

39, according to the device of claim 36, wherein surround the gap of area realization 10 to 100 nanometers of central point, be used for heat-photovoltage photon and wear then.

40, according to the device of claim 36, wherein this curved shape is to realize by two kinds of materials of bonding different heat expansion characteristic.

41, according to the device of claim 40, wherein these two kinds of materials are semiconductor and metal.

42, according to the device of claim 41, wherein this semiconductor is silicon, GaAs, carborundum, germanium or tellurium.

43, according to the device of claim 41, wherein this semiconductor is thermoelectric sensitive material, as the bismuth telluride of doping or non-doping.

44, according to the device of claim 41, wherein this semiconductor is the photovoltage sensitive material.

45, according to the device of claim 31, wherein the contact between two electrodes prevents that by separating force this separating force from offsetting attraction.

46, according to the device of claim 45, wherein this separating force is the Lorentz force that is produced in conjunction with the magnetic field that applies by the electric current that flows in electrode or the electrode assemblie.

47,, also comprise being installed on any electrode or near permanent magnet according to the device of claim 46.

48, according to the device of claim 47, the permanent magnet conduction ferromagnetism magnetic material of iron, cobalt, nickel, neodymium and aluminium that comprised combination in any wherein.

49, a kind of device of a plurality of unit of the device that comprises claim 46, comprise a plurality of permanent magnets and permeable ferrimagnet, it is arranged to have the space that comprises magnetic field, when this device is switched on and has electric current when flowing, this magnetic field allows forming the gap towards between the electrode in the device separately.

50, according to the device of claim 49, wherein permanent magnet is arranged in the grid that is formed by permeable magnetic, thus the transmission apparatus array, this device array have make hot-fluid go into this array a side and make hot-fluid go out a side of this array.

51, according to the device of claim 46, wherein alkali-metal compound is attached on the filament, and this filament produces alkali metal by heating, evaporate and being concentrated in internal tank.

52, according to the device of claim 51, wherein the filament connector passes through hot top of doped silicon and bottom road with electric mode route, thereby eliminates line hole and through hole.

53, according to the device of claim 45, wherein separating force is to act on one of electrode or the thermal expansion on both is a power.

54, according to the device of claim 53, wherein thermal expansion comes from the heating or the cooling of this device during operation.

55, according to the device of claim 53, wherein thermal expansion comes from external heat or cooling source.

56, according to the device of claim 53, wherein thermal expansion wear then and the support of photon-barrier zones outside on.

57, according to the device of claim 56, wherein this support contacts with two electrodes or two electrode assemblies.

58, according to the device of claim 31, wherein to constitute also be the top and the bottom of vacuum chamber for electrode or electrode assemblie.

59, according to the device of claim 56, wherein this support with one towards electrode or electrode assemblie directly contacts or, and directly do not contact towards electrode or electrode assemblie with another.

60, according to the device of claim 45, wherein this separating force constitutes one or more in the potential interaction that reduces or eliminates between the electrode or between the electrode assemblie, comprising: because the heat conduction that photon transmission produces, because the heat conduction that electric transmission produces, because heat conduction or the conductivity of the electronics below Fermi level or these any combination that radiation delivery produces.

61, according to the device of claim 45, also comprise mechanically, magnetically, statically, the additional force that produces of electricapparatus ground or electromagnetic ground, this additional force remedies or offsets not enough or excessive on the size of described attraction and separating force.

62, according to the device of claim 61, wherein this additional force comes from the distribution of spring or porous material.

63, according to the device of claim 31, wherein electrode or electrode assemblie have the layer towards another electrode or electrode assemblie, and described layer has high Seebeck or Pa Er card coefficient is beneficial to thermoelectric effect.

64, according to the device of claim 31, wherein electrode or electrode assemblie have the layer towards another electrode or electrode assemblie, and described layer has low work function materials or resonance and wears thickness then and be beneficial to heat-wear then effect.

65, according to the device of claim 64, wherein should low work function materials comprise alkali-metal multilayer or other combinations, alkali-metal alloy, oxide, diamond or nanotube.

66, according to the device of claim 31, one of them electrode has light-emitting layer, and another electrode has photosensitive layer, is beneficial to heat-photovoltaic effect.

67, according to the device of claim 31, wherein a plurality of electrode pair serial or parallel connections connect or series connection and in parallel being connected, and are beneficial to voltage and load or power supply coupling.

68, according to the device of claim 67, wherein electrode pair or electrode assemblie are installed or are structured on two substrates.

69, according to the device of claim 68, wherein this substrate also is a vacuum chamber, and this substrate contains the vacuum compatible material.

70, according to the device of claim 69, wherein this vacuum compatible material comprises at least a in the one group of material that contains silicon, polyimides or glass or these combination in any.

71, according to the device of claim 67, wherein electrode pair makes up dividually, thereby forms they self vacuum chamber, and these electrode pairs are to use printed-board technology to install.

72, a kind of process that is used for that thermal power transfer become electric current or is used to convert electric energy to refrigeration, comprise the device that claim 1 or 31 are provided, and adjust magnetic field intensity and CURRENT DISTRIBUTION or Temperature Distribution, thereby will be arranged on stable, isolated, equilbrium position towards electrode.

73,, wherein spaced apart in about 20 nanometers or following scope towards electrode according to the process of claim 72.

74, according to the process of claim 72, wherein adjust magnetic field intensity and CURRENT DISTRIBUTION, thereby in will being arranged on from 1 nanometer to 20 nanometer range towards electrode on isolated stable, the equilbrium position.

75, according to the process of claim 72, wherein this intensity is created in the electrode gap of 20 nanometers in 1000 nanometer range, and an electrode has light-sensitive material, and this light-sensitive material is mainly by using to the radiation conversion of electric energy to the photon heat of another photoactive electrode-wear then from radiation electrode.

76, according to the process of claim 72, wherein this intensity is created in the electrode gap of 20 nanometers in 100 nanometer range.

77, a kind of process that is used for thermal conversion is become cooling or electric energy comprises device that claim 31 is provided and this device is placed among the temperature difference.

78, according to the process of claim 77, wherein thermal source is radiation source, the heat from environment, geothermal energy or the heat that produced by engine or animal metabolism.

79, according to the process of claim 77, wherein thermal source is lived human body.

80, according to the process of claim 77, wherein thermal source is lived human body, and this device is a hand-held device.

81, according to the process of claim 77, wherein thermal source is motor, steam engine or internal combustion engine, burnt fuel or their emission gases of operation.

82, according to the process of claim 77, wherein thermal source is internal combustion engine or its emission gases, and this device is combined in this internal combustion engine or the gas emission pipe as heat sink.

83, according to the process of claim 77, under the normal temperature that takes place, operate.

84, according to the process of claim 77, wherein this device is used in refrigerator, air conditioner, cooling blanket, the Cooling clothes, or is used in attached on human body or the animal body or be comprised in the cooling device in human body or the animal body.

85, a kind of device of a plurality of unit of the device that comprises claim 77, wherein electrode is arranged to periodically isolated multilayer.

86, a kind of device of a plurality of unit of the device that comprises claim 77, its assembling of connecting.

87, a kind of device of a plurality of unit of the device that comprises claim 77, its assembling in parallel.

88, a kind of device of a plurality of unit of the device that comprises claim 77, it is fabricated on the stack of wafer or wafer, thus the combination that realizes making efficient and packaging density or make efficient and packaging density.

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