CN101505029A - Laser and heat radiation device - Google Patents
Laser and heat radiation device Download PDFInfo
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- CN101505029A CN101505029A CNA2008100576862A CN200810057686A CN101505029A CN 101505029 A CN101505029 A CN 101505029A CN A2008100576862 A CNA2008100576862 A CN A2008100576862A CN 200810057686 A CN200810057686 A CN 200810057686A CN 101505029 A CN101505029 A CN 101505029A
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Abstract
The invention provides a laser radiating device, which is made of materials having low density, high thermal conductivity, small linear expansion coefficient and good mechanical performance, wherein the radiating device adopting an anisotropic material as a substrate can realize directional conduction of the heat generated by elements so as to achieve the heating function on other elements or to facilitate further radiating heat by conducting heat. The laser radiating device can well control the working temperature of the laser elements, and has the advantages of one-step forming, simple manufacturing and processing, and convenient batch processing.
Description
Technical field
The present invention relates to laser field, especially laser and heat abstractor thereof.
Background technology
For laser, the working temperature of each element is extremely important, in order to make the laser can operate as normal, the pumping source of laser and the temperature of nonlinear optical crystal (as frequency-doubling crystal) must be strict controlled in certain scope, otherwise, these elements are cisco unity malfunction, thereby can not obtain required laser.Yet thermals source such as the pumping source of laser, laser crystal can produce a large amount of heats when work, therefore, running along with laser, the temperature of these optical elements will constantly raise, if can not reduce the temperature of these elements effectively, laser can't be worked so.Therefore, the cooling system of laser just seems extremely important.In high power laser, use the hydronic method of outside liquid usually, perhaps use air-cooled method heat radiation.Yet this large-scale cooling system but can't be applicable to portable set.
Heat sink material of the prior art is mainly metals such as copper, aluminium.But the density of copper is bigger, is unfavorable for alleviating of whole laser quality; And the thermal conductivity of aluminium is less, and radiating effect is not good, can only be used for low power laser, and is then no longer suitable for more powerful laser.In addition, also there are problems such as oxidation and linear expansion coefficient be bigger in metal such as copper, aluminium.The thermal conductivity of metal will further reduce after the oxidation, and when linear expansion coefficient more then can cause laser works, the ability of heat abstractor maintenance self shape was relatively poor, thereby cause the instability of laser.
Fig. 1 is the schematic diagram according to a kind of heat abstractor of prior art.Wherein, heat abstractor 100 is made of metal, and comprises rectangular substrate 101, and the fin 103 perpendicular to substrate 101 integrally formed with substrate 101.Fin 103 is provided with abreast, maintains a certain distance each other.Elements such as pumping source 104, laser crystal 105 and nonlinear crystal 106 are fixed on the substrate 101 of heat abstractor 100, semiconductor refrigeration chip (TEC) 110 is set between substrate 101 and pumping source 104, can TEC112 or heater strip (heating plate) 112 be set according to different situations between nonlinear crystal 106 and the substrate, be used for nonlinear crystal 106 heat radiations or heating.Pumping source 104 and nonlinear crystal 106 engages with substrate 101 by semiconductor refrigeration chip 110 and 112, and heat is conducted by substrate 101 with the fin 103 of substrate 101 one in the hot junction of TEC, and laser crystal 105 then directly engages with substrate 101.And blow to fin 103 by external fan, thereby realize cooling.The optimum position of fan setting is in the bottom of fin 103, but owing to be provided with base plate usually in the bottom of fin 103, so fan can only be arranged on sidepiece or other position of fin 103, makes that like this radiating effect reduces greatly.
Fig. 2 and Fig. 3 are the schematic diagram according to the another kind of heat abstractor of prior art, and wherein heat abstractor 200 is provided with cylindrical circular heat pipe 202.Heat pipe 202 links to each other with water-cooling system 208.Water constantly flows through from heat pipe 202, the heat of thermal source is taken away, thereby realized cooling.Yet such water-cooling system is very huge and heavy usually, is unfavorable for that whole device develops to miniaturization, portable direction.
Summary of the invention
Therefore, the laser heat abstractor that task of the present invention provides that a kind of density is little, thermal conductivity is high, linear expansion coefficient is little, is difficult for oxidation, mechanical strength is high.The present invention also will provide a kind of laser that adopts above-mentioned heat abstractor.
First aspect the invention provides a kind of heat abstractor that is used for laser, comprises the substrate of being made by anisotropic material.
Second aspect, as the described heat abstractor of first aspect, described substrate is made by the highly-conductive hot carbon fiber.
The third aspect, as the described heat abstractor of second aspect, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is parallel with the installation surface of described substrate.
Fourth aspect, as the described heat abstractor of second aspect, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is vertical with the installation surface of described substrate.
The 5th aspect, as the described heat abstractor of fourth aspect, described substrate also comprises a plurality of fin, described fin and described substrate are integrally formed, and described a plurality of fin is set parallel to each other.
The 6th aspect, as the described heat abstractor of second aspect, the fiber alignment of highly-conductive hot carbon fiber extends to side of substrate from the installation surface of described substrate in the described substrate.
The 7th aspect, as the described heat abstractor in the 6th aspect, described substrate also comprises a plurality of fin, the fiber alignment extension that described fin and described substrate are integrally formed at described highly-conductive hot carbon fiber to the side, and described fin is set parallel to each other, and the fiber alignment of the highly-conductive hot carbon fiber in the described fin stretches out from described side.
Eight aspect the invention provides the laser of a kind of employing as heat abstractor as described in the second aspect, comprises the pumping source, laser crystal and the nonlinear crystal that are fixed on the described substrate.
The 9th aspect, as the described laser of eight aspect, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is parallel with the installation surface of described substrate, described pumping source, laser crystal and nonlinear crystal so are arranged on the described installation surface, and promptly described pumping source, laser crystal and nonlinear crystal are along the fiber alignment direction of described highly-conductive hot carbon fiber aligning successively.
The tenth aspect, as the described heat abstractor in the 9th aspect, described pumping source, laser crystal, nonlinear crystal are partly embedded on the described substrate.
The tenth on the one hand, and as the described heat abstractor of eight aspect, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is vertical with the installation surface of described substrate.
The 12 aspect, as the described heat abstractor of the tenth one side, described substrate also comprises a plurality of fin, described fin and described substrate are integrally formed, and described a plurality of fin is set parallel to each other.
The 13 aspect, as the described heat abstractor of eight aspect, the fiber alignment of highly-conductive hot carbon fiber extends to side of substrate from the installation surface of described substrate in the described substrate.
The 14 aspect, as the described heat abstractor in the 13 aspect, described substrate also comprises a plurality of fin, the fiber alignment extension that described fin and described substrate are integrally formed at described highly-conductive hot carbon fiber to the side, and described fin is set parallel to each other, and the fiber alignment of the highly-conductive hot carbon fiber in the described fin stretches out from described side.
The 15 aspect, as one of the 8th to 14 aspect described heat abstractor, described pumping source is fixed on described substrate by first semiconductor refrigeration chip, and the cold junction face of wherein said first semiconductor refrigeration chip closely is connected with described substrate with pumping source respectively with the hot junction face; Described nonlinear crystal is fixed on described substrate by described second semiconductor refrigeration chip, and the hot junction face of wherein said second semiconductor refrigeration chip closely is connected with described substrate with described nonlinear crystal respectively with the cold junction face.
The 16 aspect, as one of the 8th to 14 aspect described heat abstractor, described pumping source is fixed on described substrate by first semiconductor refrigeration chip, the cold junction face of wherein said first semiconductor refrigeration chip closely is connected with described substrate with pumping source respectively with the hot junction face, and described nonlinear crystal is fixed on described substrate by described second semiconductor refrigeration chip, and the cold junction face of wherein said second semiconductor refrigeration chip closely is connected with described substrate with described nonlinear crystal respectively with the hot junction face.
The 17 aspect, as one of the 8th to 14 aspect described heat abstractor, described pumping source, laser crystal and nonlinear crystal are fixed on described substrate by same semiconductor refrigeration chip, the cold junction face of wherein said semiconductor refrigeration chip closely is connected with described pumping source, laser crystal and nonlinear crystal, and the hot junction face of described semiconductor refrigeration chip closely is connected with described substrate.
Laser provided by the present invention and heat abstractor thereof have that density is little, thermal conductivity is high, linear expansion coefficient is little, are difficult for oxidation, the mechanical strength advantages of higher.
Linear expansion coefficient little, be difficult for oxidation and the mechanical strength height has all guaranteed the structural stability of laser, thereby improved the job stability of laser.
2. the mechanical strength height has improved the structure durable of laser, reduced damage probability, simultaneously owing to have good bearing capacity, itself just can play the effect of supporting optical component, therefore need not to increase again auxiliary equipments such as pedestal, thereby simplified the structure of whole device, and be easy to make.
3. the use of every metamaterial makes heat conduction have directivity, can transform radiator structure pointedly according to this character, improves radiating efficiency, is convenient to install, and can reduces the volume of laser significantly.
4. if add TEC in the radiator structure, the accurate control of optical element working temperature then can be provided, thereby improve the job stability of laser.
5. the highly-conductive hot carbon fiber that adopts of this radiator structure can be by mode once-formings such as moldings in manufacture process, and therefore required complicated technology when need not materials processing such as metal has been simplified manufacturing process greatly, and helped batch machining.
6. owing to adopt the little material of density, thereby greatly reduce the weight of laser, made portability become possibility, had the real value of suitability for industrialized production.
Description of drawings
Below, describe embodiments of the invention in conjunction with the accompanying drawings in detail, wherein:
Fig. 1 is that the master of first kind of traditional laser heat abstractor looks generalized section;
Fig. 2 is that the second kind of traditional laser heat abstractor and the master of water-cooling system look generalized section;
Fig. 3 is that generalized section is looked on the second kind of traditional laser heat abstractor and the left side of water-cooling system;
The master that Fig. 4 shows the first embodiment of the invention of the material that adopts anisotropic high heat conductance looks generalized section;
The master that Fig. 5 shows the second embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section;
Fig. 6 shows the left side of the third embodiment of the present invention that adopts anisotropic high thermal conductivity material and looks generalized section;
The master that Fig. 7 shows the third embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section;
The master that Fig. 8 shows the fourth embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section;
The master that Fig. 9 shows the fifth embodiment of the present invention looks generalized section.
Embodiment
The material that heat abstractor is mainly little by density among the present invention, thermal conductivity is high, linear expansion coefficient is little, be difficult for oxidation, mechanical strength is high constitutes, for example the highly-conductive hot carbon fiber.The use of highly-conductive hot carbon fiber is made important improvement to heat abstractor.
Table 1 shows the various performance comparison situations of highly-conductive hot carbon fiber and heat-conducting plastic and traditional Heat Conduction Material.
Table 1
| Thermal conductivity W/ (m ℃) | Density g/cm 3 | Linear expansion coefficient/K | Whether easily oxidation | |
| Copper | 500-600 | 8.9 | 8×10 -5 | Be |
| Aluminium | 200-300 | 2.7 | 10×10 -5 | Be |
| The highly-conductive hot carbon fiber | 600-900 | 2.2 | 1.1×10 -5 | Not |
| Heat-conducting plastic | 1-100 | 1.2-1.8 | (0.9-3.6)×10 -5 | Not |
As seen, the highly-conductive hot carbon fiber has the quite good capacity of heat transmission from table 1, and its thermal conductivity equals at least, generally speaking greater than the thermal conductivity of copper, therefore can reach very good heat-conducting effect.This has anisotropy in the thermal conductivity aspect highly-conductive hot carbon fiber, its in the thermal conductivity far of fiber alignment direction greater than other direction.
The density of highly-conductive hot carbon fiber is much smaller than copper, and the weight of alleviator helps device and develops to portable direction so greatly.The linear expansion coefficient of highly-conductive hot carbon fiber is little simultaneously, and when the thermal source work of laser, under the situation that heat abstractor is heated, it can keep self shape well, thereby has guaranteed the stable of laser beam effectively.In addition, the highly-conductive hot carbon fiber is difficult for oxidation, therefore compares with metal materials such as copper, aluminium, has stable chemical property.
Simultaneously, highly-conductive hot carbon fiber and heat-conducting plastic can be by mode once-formings such as moldings in manufacture process, and therefore required complicated technology when need not materials processing such as metal has been simplified manufacturing process greatly, and helped batch machining.
In addition, the highly-conductive hot carbon fiber has excellent mechanical intensity, therefore has good bearing capacity, itself just can play the effect of optical elements such as supporting pumping source, laser crystal and nonlinear optical crystal, therefore need not to increase auxiliary equipments such as pedestal again.So just simplified the structure of whole device, and be easy to make.
Equally, density is little, linear expansion coefficient is little, be difficult for the oxidation one-shot forming, have advantages such as excellent mechanical intensity but heat-conducting plastic also possesses, although its thermal conductivity is relatively low, also be enough to satisfy the heat radiation needs of low-power laser, and its cost is lower.
Each preferred embodiment of the present invention is described with reference to the accompanying drawings.
The master that Fig. 4 shows the first embodiment of the invention of the material that adopts anisotropic high heat conductance looks generalized section.
In the present embodiment, the heat abstractor that is used for laser comprises substrate 401, and substrate 401 can be made by anisotropic material of thermal conductivity such as highly-conductive hot carbon fiber.Here, the fiber alignment of the highly-conductive hot carbon fiber in the substrate 401 is parallel with the installation surface of substrate, and described installation surface is used for the installation of laser component.
In Fig. 4, also show the laser that adopts above-mentioned heat abstractor, comprise pumping source, laser crystal, nonlinear crystal, wherein pumping source adopts GaAs semiconductor laser 404, and laser crystal adopts Nd:YAG crystal 4 05, and nonlinear crystal adopts lithium triborate crystal (LBO) 406.GaAs semiconductor laser 404 sends the pump light that centre wavelength is 808nm, and pump light is along the transmission of arrow A direction and inject Nd:YAG crystal 4 05, produces the laser of 1064nm.The laser of the 1064nm that produces is along the transmission of arrow A direction and inject LBO 406, thereby realizes the frequency multiplication output of 532nm.Usually,, send the pump light of 808nm, the temperature of GaAs semiconductor laser need be controlled at about 25 ℃, and the optimum working temperature of the LBO 406 that here uses is about 50 ℃ in order to make GaAs semiconductor laser operate as normal.Yet will send a large amount of heat during 404 work of GaAs semiconductor laser, and make its temperature be higher than 25 ℃, meanwhile, the temperature of LBO 406 but is lower than 50 ℃.Like this,, need make 404 heat radiations of GaAs semiconductor laser, also will heat simultaneously LBO 406 in order to make the laser operate as normal, like this, just can make GaAs semiconductor laser 404 and LBO 406 all reach optimum Working.
Utilize heat abstractor of the present invention then can reach this purpose.As shown in Figure 4, GaAs semiconductor laser 404 is fixed on the cold junction face of semiconductor refrigeration chip (TEC) (being also referred to as thermoelectric refrigerating unit) 410, and LBO 406 is fixed in the hot junction face of TEC 412.The hot junction face of TEC 410 and the cold junction face of TEC 412 are fixed in the installation surface of the substrate 401 of rectangle.Substrate 401 is made by anisotropic material, be the highly-conductive hot carbon fiber in the present embodiment, wherein the fiber alignment of carbon fiber be arranged in parallel with the installation surface that is fixed with the substrate of GaAs semiconductor laser 404, Nd:YAG crystal 4 05, LBO 406, because the highly-conductive hot carbon fiber is higher than thermal conductivity perpendicular to the fiber alignment direction along the thermal conductivity of fiber alignment, so substrate 401 is higher than thermal conductivity perpendicular to the fiber alignment direction along fiber alignment direction thermal conductivity.
When laser works, GaAs semiconductor laser 404 and Nd:YAG crystal 4 05 temperature raise, in order to make it maintain working temperature, need dispel the heat to it, and GaAs semiconductor laser 404 also needs the strictness control to temperature, and the temperature of GaAs semiconductor laser 404 need be controlled at about 25 ℃ in the present embodiment.In the present embodiment, the heat that GaAs semiconductor laser 404 produces at first passes to the cold junction face of TEC 410, (TEC work the time can conduct to the hot junction face from its cold junction face with heat according to self the character of TEC 410, and can realize accuracy control over temperature), it can realize the temperature control to the cold junction face, and then the temperature of the GaAs semiconductor laser 404 that is in contact with it of control, and heat conducted to its hot junction face.Nd:YAG crystal 4 05 does not need the strictness control of temperature.Subsequently, from GaAs semiconductor laser 404 conduct heat that the heat that and Nd:YAG crystal 4 05 produce by substrate 401 along the conduction of arrow A direction, can realize heating in the conductive process to TEC 412 cold junction faces.Subsequently, TEC 412 conducts to its hot junction face with heat from its cold junction face.Because of LBO 406 closely contacts with the hot junction face of TEC 412, so, can control the temperature of LBO 406 by controlling the temperature of TEC412 hot junction face.Preferably, the temperature of GaAs semiconductor laser 404 and frequency-doubling crystal LBO 406 is controlled at respectively about 25 ℃ and 50 ℃.By such mode, not only realized heat radiation to GaAs semiconductor laser 404 and Nd:YAG crystal 4 05, also made full use of the heat that heat radiation produces, realized heating to LBO 406.
In the present embodiment, because the highly-conductive hot carbon fiber has anisotropic character when heat conduction, along the thermal conductivity far of the fiber alignment of highly-conductive hot carbon fiber greater than other direction, therefore, can control heat conducting direction at an easy rate with the substrate 401 that the highly-conductive hot carbon fiber is made, promptly, itself just possesses the function of heat pipe, heat is promptly shifted from thermal source, and (promptly along the passage of high thermal conductivity, the fiber alignment direction of highly-conductive hot carbon fiber) conduction does not so need to be provided with appurtenances such as heat pipe as shown in Figure 2 again, thus simplification device structure greatly.
For some laser, LBO 406 needs heat radiation.And for this situation, only need TEC counter-rotating (changing the direction of TEC input current), with the cold junction face of TEC towards LBO, and with the hot junction face of TEC towards substrate, can realize heat radiation to LBO.
Also have, when pumping source, laser crystal and nonlinear crystal working temperature are same temperature, they can be fixed on the substrate by same TEC, realize common temperature control and heat radiation.
Need to prove that foregoing nonlinear optical crystal comprises frequency-doubling crystal, photoparametric amplifier (OPA), optical parametric oscillator (OPO) etc.
The thermal conductivity of highly-conductive hot carbon fiber used in the present invention should be greater than 600W/ (m ℃), and this highly-conductive hot carbon fiber can easily obtain by prior art.
The master that Fig. 5 shows the second embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section.
As shown in Figure 5, present embodiment adopts and the similar structure of first embodiment, and is also made by the highly-conductive hot carbon fiber, and just the installation surface of the substrate 501 in the present embodiment has the groove that is used to embed by heat dissipation element.
Present embodiment also provides the laser that adopts above-mentioned heat abstractor, wherein pumping source 504, laser crystal 505 and nonlinear crystal 506 are embedded in the substrate of being made by anisotropic highly-conductive hot carbon fiber 501, the position of embedding is corresponding with the position of above-mentioned groove.Therefore, increase the contact area of pumping source 504, laser crystal 505 and nonlinear crystal 506 and substrate 501, thereby saved the TEC that is fixed on the temperature control that is used between substrate 501 and pumping source 504, the nonlinear crystal 506 to dispel the heat.The fiber alignment of carbon fiber is parallel with the substrate mounting table face that is fixed with pumping source 504, laser crystal 505, nonlinear crystal 506.Like this, when laser works, the heat that heat abstractor can send pumping source 504 and laser crystal 505 more efficient conduction to nonlinear crystal 506, thereby when realizing, nonlinear crystal 506 is heated pumping source 504 and laser crystal 505 heat radiations.Certainly, also can realize the common requirement of dispelling the heat of pumping source, laser crystal and nonlinear crystal.Thereby realized control to pumping source 504, laser crystal 505 and nonlinear crystal 506 working temperatures.
Fig. 6 shows the left side of the third embodiment of the present invention that adopts anisotropic high thermal conductivity material and looks generalized section.
The master that Fig. 7 shows the third embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section.
Shown in Fig. 6,7, heat abstractor 600 comprises rectangular substrate 601, and is formed on substrate 601 sides and a plurality of fin 603 substrate 601 one.Fin 603 is perpendicular to substrate 601 sides and be arranged in parallel, and maintains a certain distance each other.Substrate 601 is made by the highly-conductive hot carbon fiber with fin 603.Wherein, the fiber alignment of highly-conductive hot carbon fiber extends to side of substrate from the installation surface of described substrate in the substrate, and the fiber alignment of the highly-conductive hot carbon fiber in the fin stretches out from described side.
Fig. 6,7 also shows the laser that adopts above-mentioned heat abstractor, comprises pumping source, laser crystal, nonlinear crystal.Wherein, pumping source adopts GaAs semiconductor laser 604, and laser crystal adopts Nd:YAG crystal 6 05, and nonlinear crystal adopts ktp crystal 606.GaAs semiconductor laser 604, Nd:YAG crystal 6 05 and ktp crystal 606 are fixed on the substrate 601.Because GaAs semiconductor laser 604, the optimum temperature of Nd:YAG crystal 6 05 and ktp crystal 606 work is 25 ℃, therefore it can be arranged on the same TEC 610.As shown in Figure 6, between the substrate 601 of heat abstractor 600 and GaAs semiconductor laser 604, Nd:YAG crystal 6 05, ktp crystal 606, TEC 610 is set.GaAs semiconductor laser 604 Nd:YAG crystal 6s 05, ktp crystal 606 are fixed on the cold junction face of TEC 610.The hot junction face of TEC 610 is fixed to substrate 601 installation surface of rectangle.Substrate 601 and fin 603 in the present embodiment are also made by the highly-conductive hot carbon fiber.In substrate 601, the fiber alignment of highly-conductive hot carbon fiber extends to a side of substrate 601 from the installation surface of the described substrate 601 that is fixed with described GaAs semiconductor laser 604, Nd:YAG crystal 6 05, ktp crystal 606.And the extension of highly-conductive hot carbon fiber to this side on the fin 603 integrally formed with substrate 601 arranged, wherein, fin 603 is also made by the highly-conductive hot carbon fiber, and its fiber alignment stretches out along above-mentioned side.Like this, the heat that GaAs semiconductor laser 604, Nd:YAG crystal 6 05 and ktp crystal 606 are distributed can be conducted to the side of substrate 601 by heat abstractor 600, therefore (the conventional laser fan is arranged on base plate bottom can be arranged on the side of substrate 601 to fan, be subjected to spatial limitation, and be difficult for producing convection current), thereby be not subjected to the spatial limitation of substrate 601 bottoms, be convenient to install, make the layout of whole device more reasonable.Simultaneously this structure can make wind direction shown in the arrow A in Fig. 6 send into, and is easy to form convection current like this, and then has improved radiating efficiency.
Certainly, the invention is not restricted to above-mentioned form, as required, this heat abstractor also can have other form, with further raising radiating effect.For example, in said apparatus, the heat that optical element can be produced is to two side conduction.For example, can utilize any anisotropic heat conducting material, the heat that optical element is produced is to its side, end face, bottom surface or conduction all around.
Radiating principle among the present invention can also be used for the heat radiation of any optical element, so long as the directed conduction of heat that utilizes anisotropic material that element is produced, thereby realizes heat radiation or has made things convenient for further heat radiation, is included in the scope of the present invention.
The master that Fig. 8 shows the fourth embodiment of the present invention that adopts anisotropic high thermal conductivity material looks generalized section.
As shown in Figure 8, the heat abstractor 800 of present embodiment comprise substrate 801 and with the fin 803 perpendicular to substrate 801 of substrate 801 one.Substrate 801 and fin 803 are made by the highly-conductive hot carbon fiber, and wherein the fiber alignment of highly-conductive hot carbon fiber is vertical with the installation surface of substrate.
Fig. 8 also shows the laser that adopts above-mentioned heat abstractor, comprises pumping source 804, laser crystal 805, nonlinear crystal 806.Wherein, pumping source 804 adopts the mode identical with first embodiment to be fixed to substrate 801 by TEC 810,812 respectively with nonlinear crystal 806, and laser crystal 805 directly is fixed to substrate 801.During laser works, the heat that optical element produced conducts to fin 803 downwards by substrate 801, dispels the heat by fin 803 then.Optionally, fan can be installed to quicken heat radiation below fin 803.
The master that Fig. 9 shows the fifth embodiment of the present invention looks generalized section.
As shown in Figure 9, the heat abstractor of present embodiment has adopted the structure similar to heat abstractor shown in Figure 4 400, and the substrate 901 that different is in the present embodiment is made by heat-conducting plastic (thermallyconductive plastics).
Similar to the highly-conductive hot carbon fiber, heat-conducting plastic possesses also that density is little, linear expansion coefficient is little, be difficult for character such as oxidation, therefore, the substrate 901 that utilizes heat-conducting plastic to make possess equally density little, can keep advantages such as self shape and chemical property are stable well.Though the thermal conductivity of heat-conducting plastic is not as highly-conductive hot carbon fiber height, above-mentioned advantage makes laser more flexible in application facet, is easy to portable.The thermal conductivity of heat-conducting plastic used in the present invention should be greater than 20W/ (m ℃), and such heat-conducting plastic can easily obtain by prior art.
Need to prove, though in the embodiments of the invention, heat abstractor is controlled at the temperature of GaAs semiconductor laser about 25 ℃, the temperature of LBO is controlled at about 50 ℃, the temperature of KTP is controlled at about 25 ℃, but effect of the present invention is not only in this, and it can be controlled at the temperature of optical element the arbitrary temp in 10-20 ℃, 20-30 ℃, 30-50 ℃, 50-100 ℃, 100-200 ℃ or the 200-400 ℃ of interval.
Need to prove that the anisotropic material that is adopted among the present invention is meant anisotropic thermal conductivity material.
Heat abstractor among the present invention not only can be used for the heat radiation and the temperature control of pumping source, laser crystal, nonlinear crystal, can also be used for other element and crystal.In addition, in some laser, for example use the laser of fundamental frequency light, nonlinear crystal is not set, for example produce in the laser of 355nm at some, also need to utilize with crystal is to laser and the frequency of 1064nm and 532nm frequently again, these all can utilize the device among the present invention to dispel the heat and temperature control.
Although the present invention specifically describes with reference to top preferred embodiment, yet, it should be appreciated by those skilled in the art, the any modification on basis of the present invention, carried out or equal the replacement, the spirit and scope that do not break away from technical solution of the present invention all should be encompassed in the claim scope of the present invention.
Claims (17)
1. a heat abstractor that is used for laser is characterized in that, comprises the substrate of being made by anisotropic material.
2. heat abstractor as claimed in claim 1 is characterized in that described substrate is made by the highly-conductive hot carbon fiber.
3. heat abstractor as claimed in claim 2 is characterized in that, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is parallel with the installation surface of described substrate.
4. heat abstractor as claimed in claim 2 is characterized in that, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is vertical with the installation surface of described substrate.
5. heat abstractor as claimed in claim 4 is characterized in that described substrate also comprises a plurality of fin, and described fin and described substrate are integrally formed, and described a plurality of fin is set parallel to each other.
6. heat abstractor as claimed in claim 2 is characterized in that, the fiber alignment of highly-conductive hot carbon fiber extends to side of substrate from the installation surface of described substrate in the described substrate.
7. heat abstractor as claimed in claim 6, it is characterized in that, described substrate also comprises a plurality of fin, the fiber alignment extension that described fin and described substrate are integrally formed at described highly-conductive hot carbon fiber to the side, and described fin is set parallel to each other, and the fiber alignment of the highly-conductive hot carbon fiber in the described fin stretches out from described side.
8. an employing is characterized in that as the laser of heat abstractor as described in the claim 2, comprises the pumping source, laser crystal and the nonlinear crystal that are fixed on the described substrate.
9. laser as claimed in claim 8, it is characterized in that, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is parallel with the installation surface of described substrate, described pumping source, laser crystal and nonlinear crystal so are arranged on the described installation surface, and promptly described pumping source, laser crystal and nonlinear crystal are along the fiber alignment direction of described highly-conductive hot carbon fiber aligning successively.
10. laser as claimed in claim 9 is characterized in that described pumping source, laser crystal, nonlinear crystal are partly embedded on the described substrate.
11. laser as claimed in claim 8 is characterized in that, the fiber alignment of the highly-conductive hot carbon fiber in the described substrate is vertical with the installation surface of described substrate.
12. laser as claimed in claim 11 is characterized in that, described substrate also comprises a plurality of fin, and described fin and described substrate are integrally formed, and described a plurality of fin is set parallel to each other.
13. laser as claimed in claim 8 is characterized in that, the fiber alignment of highly-conductive hot carbon fiber extends to side of substrate from the installation surface of described substrate in the described substrate.
14. laser as claimed in claim 13, it is characterized in that, described substrate also comprises a plurality of fin, the fiber alignment extension that described fin and described substrate are integrally formed at described highly-conductive hot carbon fiber to the side, and described fin is set parallel to each other, and the fiber alignment of the highly-conductive hot carbon fiber in the described fin stretches out from described side.
15. as the described laser of one of claim 8-14, it is characterized in that, described pumping source is fixed on described substrate by first semiconductor refrigeration chip, and the cold junction face of wherein said first semiconductor refrigeration chip closely is connected with described substrate with pumping source respectively with the hot junction face; Described nonlinear crystal is fixed on described substrate by described second semiconductor refrigeration chip, and the hot junction face of wherein said second semiconductor refrigeration chip closely is connected with described substrate with described nonlinear crystal respectively with the cold junction face.
16. as the described laser of one of claim 8-14, it is characterized in that, described pumping source is fixed on described substrate by first semiconductor refrigeration chip, the cold junction face of wherein said first semiconductor refrigeration chip closely is connected with described substrate with pumping source respectively with the hot junction face, and described nonlinear crystal is fixed on described substrate by described second semiconductor refrigeration chip, and the cold junction face of wherein said second semiconductor refrigeration chip closely is connected with described substrate with described nonlinear crystal respectively with the hot junction face.
17. as the described laser of one of claim 8-14, it is characterized in that, described pumping source, laser crystal and nonlinear crystal are fixed on described substrate by same semiconductor refrigeration chip, the cold junction face of wherein said semiconductor refrigeration chip closely is connected with described pumping source, laser crystal and nonlinear crystal, and the hot junction face of described semiconductor refrigeration chip closely is connected with described substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2008100576862A CN101505029B (en) | 2008-02-04 | 2008-02-04 | Laser and heat radiation device |
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| CN2008100576862A CN101505029B (en) | 2008-02-04 | 2008-02-04 | Laser and heat radiation device |
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| CN101505029A true CN101505029A (en) | 2009-08-12 |
| CN101505029B CN101505029B (en) | 2011-11-30 |
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| CN (1) | CN101505029B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074879B (en) * | 2009-11-25 | 2012-03-28 | 中国科学院半导体研究所 | Fixing method of YAG (Yttrium Aluminum Garnet) bar for solid-state laser |
| CN102893465A (en) * | 2010-05-11 | 2013-01-23 | 胡烨 | Packaging method of laser and nonlinear crystal and its application in diode pumped solid state lasers |
| CN103606546A (en) * | 2013-11-28 | 2014-02-26 | 华为技术有限公司 | Optical device |
| CN105357933A (en) * | 2015-10-23 | 2016-02-24 | 联想(北京)有限公司 | Radiating workpiece and electronic apparatus |
| CN106911057A (en) * | 2017-03-27 | 2017-06-30 | 南京大学 | A kind of lightweight compact optical parametric oscillator |
| CN110881266A (en) * | 2019-12-02 | 2020-03-13 | 西安交通大学 | Bulk phase heat conduction structure |
| CN111106509A (en) * | 2019-12-24 | 2020-05-05 | 杭州电子科技大学 | Laser heat dissipation device, preparation method thereof and solid laser |
| CN111478159A (en) * | 2020-04-12 | 2020-07-31 | 北京工业大学 | Temperature control system for internal device of solid laser |
| CN112369132A (en) * | 2018-07-12 | 2021-02-12 | 法国大陆汽车公司 | Heat sink with improved thermal conductivity |
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2008
- 2008-02-04 CN CN2008100576862A patent/CN101505029B/en not_active Expired - Fee Related
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074879B (en) * | 2009-11-25 | 2012-03-28 | 中国科学院半导体研究所 | Fixing method of YAG (Yttrium Aluminum Garnet) bar for solid-state laser |
| CN102893465A (en) * | 2010-05-11 | 2013-01-23 | 胡烨 | Packaging method of laser and nonlinear crystal and its application in diode pumped solid state lasers |
| CN103606546A (en) * | 2013-11-28 | 2014-02-26 | 华为技术有限公司 | Optical device |
| WO2015078125A1 (en) * | 2013-11-28 | 2015-06-04 | 华为技术有限公司 | Optical device |
| CN105357933A (en) * | 2015-10-23 | 2016-02-24 | 联想(北京)有限公司 | Radiating workpiece and electronic apparatus |
| CN106911057A (en) * | 2017-03-27 | 2017-06-30 | 南京大学 | A kind of lightweight compact optical parametric oscillator |
| CN106911057B (en) * | 2017-03-27 | 2019-10-08 | 南京大学 | A kind of lightweight compact optical parametric oscillator |
| CN112369132A (en) * | 2018-07-12 | 2021-02-12 | 法国大陆汽车公司 | Heat sink with improved thermal conductivity |
| CN110881266A (en) * | 2019-12-02 | 2020-03-13 | 西安交通大学 | Bulk phase heat conduction structure |
| CN111106509A (en) * | 2019-12-24 | 2020-05-05 | 杭州电子科技大学 | Laser heat dissipation device, preparation method thereof and solid laser |
| CN111478159A (en) * | 2020-04-12 | 2020-07-31 | 北京工业大学 | Temperature control system for internal device of solid laser |
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| CN101505029B (en) | 2011-11-30 |
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