CN101499413B - Single wafer dryer and drying methods - Google Patents

Single wafer dryer and drying methods Download PDF

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Publication number
CN101499413B
CN101499413B CN 200910128120 CN200910128120A CN101499413B CN 101499413 B CN101499413 B CN 101499413B CN 200910128120 CN200910128120 CN 200910128120 CN 200910128120 A CN200910128120 A CN 200910128120A CN 101499413 B CN101499413 B CN 101499413B
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wafer
port
orientation
processing section
region
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CN 200910128120
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Chinese (zh)
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CN101499413A (en
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亚历山大·勒纳
尤尼斯·阿克基雷
拉希特·马符雷夫
方浩铨
李世剑
盖伊·夏伊拉齐
迈克尔·休格曼
鲍里斯·菲什金
鲍里斯·高符兹曼
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应用材料股份有限公司
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Priority to US60/335,335 priority
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Priority to CN02821969.4 priority
Priority to CN02821969.42002.11.01 priority
Publication of CN101499413A publication Critical patent/CN101499413A/en
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Publication of CN101499413B publication Critical patent/CN101499413B/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/10Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/139Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber

Abstract

A module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.

Description

单个晶片的干燥装置和干燥方法 Drying apparatus and a drying method of a single wafer

[0001] 本发明是提交于2002年11月1日,申请号为0观21969.4,题为“单个晶片的干燥装置和干燥方法”的专利申请的分案申请。 [0001] The present invention was filed on November 1, 2002, Application No. 0 21969.4 concept, divisional application entitled "single wafer drying apparatus and a drying method" patent application. 技术领域 FIELD

[0002] 本发明有关一种半导体制作工序,特别是有关一种将半导体基材干燥的方法。 [0002] The present invention relates to a semiconductor manufacturing process, more particularly to a semiconductor substrate drying method. 背景技术 Background technique

[0003] 随着半导体元件尺寸持续缩小,超洁净(ultra clean)制作工序的重要性也持续升高。 [0003] As semiconductor device dimensions continue to shrink, the importance of ultra clean (ultra clean) manufacturing process also continues to rise. 在一槽(或液体浴)的液体内以水溶液清洁,其后紧接着旋干冲洗(例如在另一个槽中,或是更换清洁槽中的液体),就可以获得所期望的洁净程度。 A slot in the liquid (or a liquid bath) to aqueous cleaning solution, followed by rotary evaporation followed by rinsing (e.g., another slot, or replace the cleaning liquid in the tank), it is possible to obtain a desired degree of cleanliness. 在由旋干制作工序移出后, 若不使用旋干装置,清洗液体将由基材表面挥发,并且导致条纹或斑点的产生,或是留下清洗残留物在基材表面上。 After removal from the spin-dry process production, without using rotary evaporation apparatus, the substrate surface cleaning liquid by volatilization, and resulting in streaks or spots, or the cleaning surface of the substrate leaving residue. 这些条纹、斑点以及清洗残留物可能导致后续的元件失效。 These streaks, spots and residues of the cleaning elements may lead to subsequent failure. 因此很多注意力被导向改善基材由液体槽移出时,使其干燥的方法。 Therefore much attention has been directed to improve the substrate is removed from the liquid bath, drying method.

[0004] 一种众所周知的Marangoni干燥法,可以产生表面张力梯度,以将冲洗液引导而离开基材,使其表面基本上不留下冲洗液,并且藉此所产生的流动方式,得以避免产生条纹、斑点以及冲洗液残留物。 [0004] A well-known Marangoni drying, surface tension gradient can be generated to guide the rinsing liquid away from the substrate to the surface leaving substantially no rinse liquid, and flow patterns generated thereby, to avoid stripes, spots, and the rinse liquid residue. 特别是利用Marangoni方法,将可与冲洗液(例如IPA蒸气) 溶混的溶剂导入到弯液面上,此弯液面是在基材被由冲洗盆举起时所形成的,或是当冲洗液体漏出而流过基材时所形成的,溶剂蒸气是以高于弯液面的顶端的被吸收蒸气浓度,而沿着液体表面被吸收,此被吸收气体的较高浓度,导致弯液面顶端的表面张力较冲洗液体内部的表面张力为低,因此使得冲洗液体由干燥中的弯液面,流向冲洗液体内部。 In particular by Marangoni method, with the rinsing liquid (e.g., IPA vapor) miscible solvent into the meniscus, the meniscus is formed when the substrate is lifted by a rinsing basin, or when the flush , leakage of the solvent vapor flows through the liquid base material is formed above the top of the meniscus is absorbed vapor concentration, is absorbed along the surface of the liquid, the higher the concentration of this gas is absorbed, resulting in meniscus the surface tension at the top of the internal rinsing liquid is relatively low, so that the rinsing liquid from the rinsing meniscus drying, the interior of the liquid flow. 这样的流动就是所谓的「Marangoni」流动,且可加以利用,以避免在基材上留下斑纹、斑点或是洗液残留物的情况下,进而将基材干燥。 Such flow is called "Marangoni" flow, and can be utilized in order to avoid leaving the case of stripes, spots or lotion residues, the substrate is then dried on the substrate. 发明内容 SUMMARY

[0005] 本发明的第一方案提供第一组件,用以处理晶片,此组件包含处理部分(processing portion),该处理部分包含负载端口和卸载端口。 [0005] In a first embodiment the present invention provides a first component for processing a wafer, comprising the component processing section (processing portion), the processing section comprising a load port and unload port. 晶片经过负载端口而降低进入该处理部分;而卸载端口自该负载端口而水平移位设置,使得该晶片可以在卸载端口上被举高而离开该处理部分。 After the wafer is lowered into the load port of the processing section; unload port and from the load port disposed horizontally displaced so that the wafer can be held high and out of the processing section on the unload port. 该处理部分还包含可转动晶片支持器,用于转动输入晶片由第一定向转到第二定向,该输入晶片具有该第一定向时,是与该负载端口对齐,该输入晶片具有该第二定向时,是与该卸载端口对齐。 The processing section further comprising a rotatable wafer holder, a wafer rotational input to the first orientation to a second orientation, the input of the wafer has a first orientation, it is aligned with the load port, the wafer having the input when the second orientation, is aligned with the unloading port.

[0006] 本发明的第二方案提供第二组件,用以处理晶片,此第二组件包含处理部分,该处理部分包含如第一方案的第一组件内功能相当的负载端口和卸载端口。 [0006] The second embodiment of the present invention to provide a second component for processing a wafer, the second component comprises a processing section, which includes a processing portion of the first components of the first embodiment is functionally equivalent load port and unload port. 第二组件还包含(1)外部溢流堰(an external overflow weir),其位于沿着前述处理部分的外部表面上; 以及(2)分离壁,其位于负载端口和卸载端口之间,以将处理部分的上面区域分隔成第一区域和第二区域,并且可制止表面液体在第一区域和第二区域之间的流动。 The second component further comprises (1) an external overflow weir (an external overflow weir), which is located along the outer surface of the processing section; and (2) separating wall, which is located between the load port and the unload port, to upper region of the processing section into a first region and a second region, and may stop the flow of liquid between the surface of the first region and the second region.

[0007] 本发明的第三方案提供第三组件,用以处理晶片,此第三组件包含处理部分,其具有如第一方案中第一组件内相同功能的负载端口。 Third embodiment [0007] The present invention provides a third component, for processing a wafer, the assembly comprises a third processing section, a load port having the same functions as in the first embodiment the first component. 第三组件还包含喷洒机构,此喷洒机构能于处理时没入处理部分的液体中,且该喷洒机构的位置是能喷洒液体到晶片位于水面下的表面上(该晶片是经由负载端口被降低进入水面)。 Further comprising a third component spray mechanism, this mechanism can not spray the liquid into the processing section at the time of treatment, and the position of the spray mechanism is capable of spraying liquid onto the upper surface positioned below the surface of the wafer (the wafer is lowered into the load port via water surface).

[0008] 本发明的第四方每提供第四组件,用以处理晶片,此第四组件包含处理部分,该处理部分包含如第一方案中第一组件内相同功能的负载端口和卸载端口。 [0008] The fourth side of each of the present invention provides a fourth component for processing a wafer, the fourth component comprises a processing section, the processing section comprising a load port and unload port as in the first embodiment the same functions as the first component. 第四组件还包含输出部分,该输出部分具有(1)第一晶片接收器,用于接收经由卸载端口所举高的晶片;以及(2)捕获器,其被耦合到第一晶片接收器,被用于接触被卸载端口升高的晶片,并且也随着被动地升高。 The fourth component further comprises an output portion, the output portion having (1) a first wafer receiver for receiving high-cited via wafer unload port; and (2) catcher, which is coupled to the receiver a first wafer, It was elevated for contacting the unload port of the wafer, and also increases with passively.

[0009] 本发明的第五方面提供第五组件,用以处理晶片,此第五组件包含处理部分,该处理部分包含如第一方案中的第一组件内相同功能的负载端口和卸载端口。 [0009] A fifth aspect of the present invention provides a fifth component for processing a wafer, the assembly comprises a fifth processing section, the processing section comprising a load port and unload port described in the first embodiment as a first component. 第五组件还包含输出部分,该输出部分具有一第一晶片接收器,用于接收经由卸载端口所举高的晶片;以及一围体(enclosure),此围体环绕第一晶片接收器。 The fifth component further comprises an output portion, the output portion having a first wafer receiver for receiving a high wafer unload port via cited; and an enclosure body (Enclosure), this enclosure member surrounding the first wafer receiver. 此围体包含有(1)第一开口,用于使得晶片可以由处理部分举高,经卸载端口而到该第一晶片接收器;(2)第二开口,用于使得晶片可以被晶片握持器由晶片接收器中抽取出来;以及(3)多个外加开口,用于允许在前述围体中,建立起空气的层流。 This enclosure body comprising (1) a first opening for such wafers may be processed by a high lift portion, through the unload port and the first wafer to a receiver; (2) a second opening for holding the wafer so that the wafer can be extracted by the wafer holder out of the receiver; and (3) a plurality of additional openings in the enclosure for allowing the body to establish a laminar flow of air.

[0010] 本发明的第六方案提供第六组件,用以处理晶片,此第六组件包含处理部分,该处理部分包含如第一方案中的第一组件内相同功能的负载端口和卸载端口。 [0010] The sixth embodiment of the present invention provides a sixth component for processing a wafer, the sixth component comprises a processing section, the processing section comprising a load port and unload port described in the first embodiment as a first component. 第六组件也包含输出部分,该输出部分具有(1)第一晶片接收器,用于接收经由卸载端口所举高的晶片;以及(¾第二晶片接收器,用于接收经过该卸载端口而升高的晶片。其中上述的第一晶片接收器以及第二晶片接收器是用于分别位于第一位置和第二位置之间传送晶片,其中该第一晶片接收器被置放的位置是接收经过该卸载端口而升高的该晶片,该第二晶片接收器被置放的位置是接收经过该卸载端口而升高的该晶片。如所提出的数种其他方案,有关于本发明的方法、装置以及系统的方案,是依据上述这些方案而提出。 The sixth component also includes an output portion, the output portion having (1) a first wafer receiver adapted for receiving a wafer held high via the unload port; and (¾ a second wafer receiver adapted for receiving the unload port and the increased wafer. wherein said first wafer and second wafer receivers are receivers for conveying the wafer are located between the first and second positions, wherein the first wafer receiver is receiving position is disposed raised through the unload port of the wafer, the second wafer receiver is disposed in the receiving position raised through the unload port of the wafer. as several other proposed schemes, the present invention relates to a method , apparatus and system programs, and these programs are made according to the above.

[0011] 为进一步说明本发明的上述目的、结构特点和效果,以下将结合附图对本发明进行详细的描述。 [0011] To further illustrate the above object, features and advantages of the present invention, the following in conjunction with the accompanying drawings of the present invention will be described in detail. 附图说明 BRIEF DESCRIPTION

[0012] 图1所显示的是所提出的一种干燥装置的侧视图,其中该装置至少包含处理部分以及输出部分,二者的结构皆是依据第一方案所提出; [0012] FIG. 1 shows a side view of the proposed apparatus for drying, wherein the apparatus comprises at least a processing section and an output section, both structures are based on the first aspect is proposed;

[0013] 图2A至图21为本发明所提出的图1的干燥装置的概略的侧视图,其显示了晶片传输通过及输出来源的一连串阶段的干燥装置; [0013] a schematic side view of FIG. 2A to FIG. 21 of the present invention proposed a drying apparatus of Figure 1, showing a wafer drying apparatus transmitted through the series of stages and the output of the source;

[0014] 图3A与图;3B分别为本发明所提出的图1的干燥装置的概略的侧视图以及俯视平面图,其中的输出部分是依据第二方案所建造而成; [0014] FIG 3A and FIG; schematic side view and a top plan view of the drying apparatus of the present invention are made 3B of Figure 1, wherein the output section is made based on the construction of a second embodiment;

[0015] 图4A至图41为本发明所提出的图3A与图的干燥装置的概略的侧视图,其显示了晶片输出的过程中,输出部分所处的一连串位置; [0015] FIGS. 4A to FIG. 41 of the present invention proposed a schematic side view in FIG. 3A and FIG drying apparatus, showing a series of positions in the output process of the wafer, in which the output portion;

[0016] 图5为本发明所提出的干燥装置的概略的侧视图,其处理部分是依据本发明所提出的第二方案所建构而成; A schematic side view [0016] FIG drying apparatus 5 of the present proposed invention, which is constructed from the processing section according to the second embodiment of the present invention is proposed;

[0017] 图6为可以和蒸气喷嘴一同建构在本发明所提出的干燥装置内的蒸气气流变流装置的概略的侧视图;[0018] 图7为依据所观察到经由被不同IPA浓度和不同气流率的情况下,被干燥化处理的晶片,其表面上被发现的粒子数目的图表; [0017] FIG. 6 is a schematic side view of a can with the construction of the drying apparatus of the present invention proposed a vapor flow deflector and the vapor nozzle; [0018] FIG. 7 is based on the observed via the various IPA concentrations and different in the case of flow rate, the wafer is dried process, the number of particles found on the surface of the chart;

[0019] 图8A是对于描述蒸气气流角度时可以帮助了解的概略性示意图;以及 [0019] FIG. 8A is described with respect to the angle of the vapor stream to help understand schematic diagram schematically; and

[0020] 图8B是将含有不同材料的基材干燥化时,所常常使用的蒸气气流角度的一个列表。 [0020] FIG 8B is a base material containing a different material desiccated, a list of the angle of the vapor stream is often used. 具体实施方式 Detailed ways

[0021] 依据本发明所提出的一个干燥装置包含处理部份和输出部份,前述处理部份包含一主室,而主室的建构可以是依据两个主要的方案而完成。 [0021] comprising a drying apparatus according to the present invention proposed processing portion and the output portion, the handle portion comprising a main chamber, the main construction of the chamber may be based on two main programs is completed. 在第一方案(没入室18a)中, 晶片沉浸在液体浴中,并且可以参照图1至21图所显示及其所伴随进行的说明;第二方案(喷雾室18b)对于未没入于液体中的晶片加以喷洒液体于其表面上,并且可以参照图5所显示及其所伴随进行的说明。 In a first embodiment (the submersion chamber 18a), the wafer is immersed in a liquid bath, and may refer to FIG. 1 to FIG. 21 and shown in the accompanying instructions; a second embodiment (a spray chamber 18b) for non-submerged in the liquid the wafer to be sprayed onto the liquid surface thereof, and a display 5 and may be described with reference to accompanying FIG.

[0022] 类似前段所述,输出部分包含输出平台,而此输出平台的建构可以是依据两个主要的方案而完成。 [0022] Similarly in the preceding paragraph, the output portion includes an output platform, the platform and the output of this construct may be based on two main programs is completed. 在第一方案(转动平台58)中,将晶片由大致垂直方向转动到大体是水平的方向,并且可以参照图1至图21所显示及其所伴随进行的说明;第二方案(传送平台158)水平地传送,以在多个晶片接收器中,接收一个大体是垂直方向的晶片,并且可以参照图3A至图4K所显示及其所伴随进行的说明。 In the first embodiment (the rotary table 58), the wafer is rotated by substantially vertical direction to a substantially horizontal direction, and may refer to FIGS. 1 to 21 shown and described for the associated; a second embodiment (transmitting platform 158 ) is horizontally transferred to the wafer at a plurality of receivers, receives the wafer is a substantially vertical direction, and FIG. 3A to 4K shown and described may be made with reference to the accompanying FIG.

[0023] 处理部分和输出部份的每一个方案就其本身而言,都被认为是一个独立的发明。 [0023] The processing section and the output portion of each program on its own, is considered an independent invention. 也因此,每一个处理部分的方案就可以利用不同的每一个输出部分的方案,同理,反之亦然。 Therefore, a portion of each program can use different processing schemes each output section, empathy, and vice versa. 另外,处理部和输出部也可以分别使用传统的处理部分和输出部分。 Further, the processing unit and the output unit may use conventional processing and output portions, respectively. 最后,处理部分和输出部分的数个各别的特征是具有发明性的,并且可以通过参照下列附图及其描述而获得。 Finally, the processing section and a plurality of respective output section having a characteristic of the invention, and may be obtained by reference to the following drawings and description.

[0024] 图1所显示的是依据本发明所提出的干燥装置11的结构的侧视图,其中所显示的处理部分和输出部分是依据本发明的第一方案提出。 [0024] FIG. 1 shows a side view of a configuration of a drying apparatus 11 of the present invention is proposed, wherein the processing section and output section shown is made according to the first embodiment of the present invention. 依据本发明所提出的一种干燥装置11 包含处理部份10和输出部分12。 According to one proposed drying apparatus 11 of the present invention comprises a handle portion 10 and an output section 12.

[0025] 处理部-第一方案 [0025] The processing unit - the first aspect

[0026] 处理部分10包含一没入室18a,其将晶片沉浸在例如去离子水的液体浴中,其中可能包含也可能不包含表面活性剂(surfactant)或是其他的化学清洁剂,例如应用材料(Applied Material)公司的ElectraClean™ 溶液。 [0026] The processing section 10 comprises a submersion chamber 18a, and the wafer is immersed in a bath of liquid such as deionized water, which may or may not contain a surfactant (Surfactant) or other chemical cleaning agents such as Applied Materials (Applied Material) company ElectraClean ™ solution.

[0027] 上分离壁图2A)将没入室18a分隔成两个部分,一个旋干部分沈和干燥部分观。 [0027] The separation wall FIG. 2A) the submersion chamber 18a is divided into two portions, a rinsing section and a drying section sink concept. 借着将干燥部分观与旋干部分沈隔离开来,可以获得并维持一个较干净的出口区域,并且可以降低要移除的微粒重新附着于晶片,诸如此类的污染的危险性,因为微粒很容易在此旋干部分沈中被移除,并由此被排出。 By the drying section and the rinsing section View sink isolate can obtain and maintain a cleaner outlet region, and may be re-reduced to remove fine particles adhering to the wafer, and so the risk of contamination, because fine particles easily in the rinsing section sink is removed, and is thus discharged. 没入室18a可以具有一围绕着没入室18a的溢流堰20,以使得液体得以流入。 Submersion chamber 18a may not have a surrounding chamber 18a of the weir 20, so that the liquid to flow into. 液体可能持续供应到,例如较低部位的没入室18a,所以液体持续地溢流到溢流堰20。 Liquid may be continuously supplied to, for example, the burglary not lower portion 18a, so that the liquid is continuously overflows into overflow weir 20. 溢流堰20 (如图2A至21所示)可以被耦合到上分离壁24, 以帮助由旋干部分26及干燥部分观中移除微粒。 Overflow weir 20 (FIG. 2A to 21) may be coupled to the separating wall 24, used to assist in the drying section 26 and the rinsing View removed particles. (图中所未显示的)高准位和低准位液体传感器可以被耦合到没入室18a以及溢流堰20、20a。 (Not shown in the figure) of high level and low level liquid sensor may not be coupled to the chamber 18a and an overflow weir 20,20a. 在另一个并未显示出来的方案中, 溢流堰20可以包含一室,而处理部10则嵌入在其中。 In another embodiment not shown the weir 20 may comprise a chamber, and the processing unit 10 is embedded therein. 排气管线(例如设施排气管线)可以被耦合到此室(例如靠近其底部),并且泄出管线可以被安排于沿着此室底部的位置,其可以被倾斜以加速排除泄出物。 An exhaust line (e.g. facility exhaust line) may be coupled to this chamber (e.g., near the bottom thereof), and the escape line may be arranged at a position along the bottom of this chamber, which may be inclined to accelerate the escape was excluded.

[0028] 旋干部分沈可以装配有顶头喷嘴30,并且/或者没入喷嘴32,前述每一个都是要在晶片进入旋干部分26时,将液体导流到晶片表面上。 [0028] Shen rinsing section 30 may be equipped with a nozzle head, and / or submerged nozzle 32, each of the foregoing are to be enters the rinsing section 26, the liquid will flow onto the wafer surface in the wafer. 此旋干部分沈,在一方案中,是用来将传送到依据本发明所提出的干燥装置11前已经喷洒于晶片上的任何液体的薄膜(例如表面活性剂)加以旋干。 Rinsing section sink, in an embodiment, is transferred to be used to spin dry the liquid film according to any of the proposed drying apparatus 11 of the present invention has been sprayed onto the front of the wafer (e.g., surfactants). 这样的介面活性剂喷洒步骤,已知能防止晶片在送入依据本发明所提出的干燥装置11前其表面的液体就干化而残留。 Such spraying step interface active agent, known to prevent the wafer 11 before it is based on the liquid surface drying drying apparatus provided by the present invention while remaining in the feeding. 因此在将晶片载入干燥装置前, 若有对晶片喷洒以介面活性剂(经常适合使用的是含有低浓度的介面活性剂喷溢,例如Alfonic介面活性剂),将可以避免晶片进入干燥装置前,晶片表面上的液体干化而留下水痕。 Therefore, before loading the wafer drying apparatus, if the wafer is sprayed with the active agent interface (the interface is often used for the active agent containing a low concentration of eruption, for example, Alfonic interface active agent), the wafer can be avoided before entering the drying apparatus , the liquid on the wafer surface drying leaving water marks. 这样一个依据本发明所提出的步骤可以在清洗装置中或是在晶片传递(例如晶片握持器或是清洗器可以包含将基材施以介面活性剂,以让其在清洗过程中或是在基材被由清洗装置移出,或是在通过晶片握持器传送基材的时候,都能保持其湿润)过程中进行。 Such a wafer can be passed or in steps according to the present invention is set forth in the cleaning apparatus (e.g. a wafer holding member or a cleaning substrate may be subjected to contain an active agent interface, in order to let the cleaning process or substrate is removed by a cleaning device, or when conveying the substrate through the wafer holding device, which can be maintained wetting) process.

[0029] 旋干部分沈可以还包含负载部34,其可以只是一个位置,晶片即是经由此区域进入旋干部分26 ;或者负载部分也可以是一由旋干部分沈的顶部溢流堰或是盖子(若是有盖子的话)所限定的一个开口。 [0029] The rinsing section may further include a load sink portion 34, which may simply be a position, that is, through this region of the wafer into the rinsing section 26; or the load may be a part of the top of the overflow weir divided by the rinsing sink or a lid (cover if there is any) of a defined opening.

[0030] 正位于或是靠近没入室18a底部的是托架36,被用于接收或是支持大体是垂直方向的晶片(可能有稍微的与铅直方向有出入),托架36可更进一步地产生一个转动,此转动是由一个托架36可以接收经由负载部34进入旋干部分沈的晶片的一个第一位置,转到第二位置,此第二位置是晶片可以被托架36举起,经由干燥部分观的出口部分37的位置离开。 [0030] n located in or near the bottom of the submersion chamber 18a is a bracket 36, it is used to receive or support a wafer substantially perpendicular direction (there may be a slight discrepancy between the vertical direction), the carriage 36 can be further generating a rotated, this rotation by a bracket 36 into the rinsing section may receive a first sink via a load position of the wafer portion 34, to a second position, this second position is a wafer carrier 36 can be held since leaving the drying section via the position of the outlet portion 37 of the concept. 当托架36将晶片由旋干部分沈转动到干燥部分观时,晶片是保持没入在液体中。 When the wafer carrier 36 is rotated by a rinsing section to the drying section sink concept, the wafer is held submerged in the liquid.

[0031] 通常使用来转动托架36的机构常常是嵌在处理部10的外部上,并且是经由处理部10的外溢流堰,而被直接或是磁吸在耦合到托架36上。 [0031] The bracket 36 is generally used to rotate the mechanism often fitted on the exterior 10 of the processing section, and the weir is outside via the processing unit 10, or is directly coupled to the magnet on the carriage 36. 在图1例示性的实施例中,当链接系统被启动是往下时,链接系统38可把托架36由第一位置(在旋干部分沈中)旋转到第二位置(在干燥部分观中)。 Example 1 FIG exemplary embodiment, the system is activated when the link is down, the system 38 may be linked to the bracket 36 (in the rinsing section sink) from a first position to a second position (in the drying section View in). 当链接系统被启动往上时,链接系统38可把托架36由干燥部分观撤回旋干部分26。 When the system is activated when the up link, the link system 38 may be part of the bracket 36 by a drying concept rinsing section 26 withdrawal. 所显示的促动器40被耦合到链接系统38上,其中的促动器40可以是任何传统的促动器,例如汽缸等。 The display actuator 40 is coupled to the link system 38 in which the actuator 40 may be any conventional actuator such as a cylinder and the like.

[0032] 得以驱使托架转动的另一种结构可以包含将托架36嵌于一棍状物上,此棍状物是沿着没入室18a的底部而水平延伸,所以托架36可以沿着该棍状物转动,在这样一个结构中,托架36可以是例如与没入室18a同宽,使得一磁性物质得以同时嵌在前述二者之上, 并且可以是经由没入室18a的侧壁而耦合到外部的磁性物质。 [0032] The carriage is driven by rotation of another structure may comprise a bracket 36 fitted onto Yigun fingers, this stick-like horizontally extending along the bottom of the submersion chamber 18a, the bracket 36 may extend along the stick was rotated, in such a configuration, the bracket 36 may be, for example submersion chamber 18a with the width, such that a magnetic substance is embedded at the same time both the above, and may be via the submersion chamber 18a of the side wall coupled to an external magnetic substance. 此外部磁性物质可以被某种促动器(例如气动式的促动器40)向前驱动或是向后驱动。 Further magnetic substance may be some portion of the actuator (e.g., pneumatic actuator 40) is driven forward or reverse drive. 为了使托架36和外部磁性物质转动,滚筒可以被嵌置于其上,以接触并且沿着没入室18a的侧壁滚动。 To the carriage 36 is rotated and the outer magnetic substance, drum may be placed on the insert to the contact and not along the side walls of the scroll chamber 18a.

[0033] 一对传感器(未图示)可以被耦合到促动器40、链接系统38以及/或者托架36 上,以检测得知第一及第二托架位置。 [0033] a pair of sensors (not shown) may be coupled to the actuator 40, the link system 38 and / or bracket 36, to detect that the first and second tray position. 进一步而言,一个传感器,例如光学传感器(未图示) 可以检测晶片是否存在于托架36上,一旦检测到晶片存在,则一信号被送到促动器40,以使得促动器40将托架36由第一位置转动到第二位置。 Further, a sensor, such as an optical sensor (not shown) may detect whether a wafer is present on the carriage 36, upon detecting the presence of the wafer, a signal is sent to the actuator 40, the actuator 40 so that the bracket 36 is rotated from the first position to the second position.

[0034] 干燥部分观可以包含推进器44,其是被设计成能以最小接触面积来接触晶片的一较低的边缘。 [0034] Concept drying section 44 may comprise a pusher which is designed to minimize contact area to contact with a lower edge of the wafer. 这样的一个推进器即是传统所指称的刀缘推进器(knife-edge pushers), 此刀缘推进器44可以被耦合到一垂直导引(未图示)上,其是沿着干燥部分观的后壁而放置的,并且可以被进一步(例如磁性地)耦合到促动器(例如一个由马达所驱动的,如图1的铅质螺旋物48)上,其是被用来沿着导引而将推进器44举高或是降低,以至于推进器44得以将晶片由干燥部分观处举起来,并可以在此后让该推进器回到托架36下面的原始位置。 Such a conventional propeller that is alleged pusher blade edges (knife-edge pushers), the knife edge of the pusher 44 may be coupled to a vertical guide (not shown), which is a portion along View dried the rear wall is placed, and may be further (e.g., magnetically) coupled to the actuator (e.g. driven by a motor, a spiral of lead 1 in FIG. 48), which is used along the guide the primer will promote or reduce the high lift device 44, so that the pusher 44 to lift the wafer from the drying section to the concept, and may thereafter allow the pusher 36 return to the original position below the carriage.

[0035] 此干燥部分观的后壁通常是倾斜的,(例如,倾斜九度)使得该推进器可以在晶片被由干燥部分观举起时,将该晶片维持在其倾斜的位置,也可以确保晶片位于一较可重复实现的位置,亦即,较一非倾斜的垂直方向更能达成的位置。 [0035] The rear wall of the drying section This concept is generally inclined (e.g., nine degrees inclination) so that the pusher can be lifted when the wafer is dried by a section concept, the wafer is maintained in its tilted position, may be a wafer located at a position more to ensure repeatable achieved, i.e., non-perpendicular direction, compared with a more inclined position reached.

[0036] 一对倾斜导引46也可以被耦合到干燥部分观的后壁,并且其所放置的位置是使其在晶片由托架36经由干燥部分观而被举起时,可以接触晶片的反面边缘。 [0036] a pair of inclined guide 46 may also be coupled to the rear wall of the dryer section concept, and it is placed in position so that the drying section via the wafer is lifted by the concept of bracket 36, you may contact the wafer the opposite edge. 每一个导引46可以包含一个插槽,其可以是U型的或是V型的插槽,而晶片的边缘可以被抓住于其中。 Each guide may comprise a slot 46 which may be U-shaped or V-shaped slot, and the edge of the wafer can be caught therein. 或者,每一个导引46可以包含晶片边缘所倚靠的一个斜表面,或是导引46可以形成一个由晶片开始向外远离的角度,以尽可能降低接触面积。 Alternatively, each of the guide 46 may comprise a beveled surface against the edges of the wafer, or the guide 46 may be formed of a start angle outwardly away from the wafer, as much as possible to reduce the contact area.

[0037] 干燥部分观的出口部分37通常是被限定成干燥部分观的一个顶部墙或是盖子, 使得干燥时所产生的蒸气得以由此排出(例如经由泵),而不是由逸散到周围的空气中。 [0037] The outlet of the drying section View portion 37 is generally defined as a top wall or cover of the dryer section concept, such that the vapor generated when drying is thereby discharged (e.g. via a pump), rather than escape into the surrounding air. 在液体准位的上及出口部分37之下,设置有一对的喷洒机构50,其是被用来在晶片被举起而离开液体表面的时候,提供跨过晶片正表面和反面表面的全面连续性的蒸气喷洒。 And a liquid outlet below the upper level portion 37, is provided with a spray mechanism pair 50, which is used when the wafer is lifted away from the liquid surface, there is provided a continuous surface across the full wafer positive and reverse surfaces of steam spray. 喷洒机构50所摆放的位置是要喷洒蒸气到晶片被由液体中举起时,所形成的凹面上。 Spray mechanism 50 is placed in position on the concave surface to be sprayed when the wafer is lifted by the vapor into the liquid, it is formed. 虽然喷洒机构可能包含一个单一线性喷嘴或是多个喷嘴,其通常包含有一个具有一连串洞孔(例如具有直径0. 005至0. 007英寸直径的114个洞孔,并且沿着与晶片相邻8. 5英寸的距离均勻地分布)形成于其中的管子,前述的喷洒机构(管子)50通常是由石英或是不锈钢所建构而成。 Although the spray mechanism may comprise a single linear nozzle or a plurality of nozzles, which typically comprises a series of holes with (e.g., having a diameter 0.005 to 0.007 inches diameter holes 114, along with the wafer and adjacent evenly distributed distance of 8.5 inches) is formed in a tube therein, the spray means (tube) 50 is typically constructed from stainless steel or quartz.

[0038] 每一个喷洒机构(管子)50可以是人工手动调整方向,以导流出一个具有预期角度(此角度可以如下所述,相对于经过喷洒管子50中心所画出的水平线,以及垂直于图8A 中的液体表面的垂直线)的蒸气流(例如IPA蒸气)。 [0038] Each spray means (pipe) 50 may be manually oriented so that the flow is expected to have an angle (this angle may be as described below with respect to FIGS. 50 through center spray tube is drawn horizontal and the vertical vertical lines of the liquid surface. 8A) vapor stream (e.g., IPA vapor). 当进一步参照到图6时,此IPA蒸气流的导向,可以有也可以没有气流变流装置的帮助。 When further reference to FIG. 6, this guide IPA vapor stream, gas flow may be changed or may not help flow device. 此气流的特定角度可能视该晶片将要干燥的物质的不同而有所改变,图8B所列出的对照表,是举例所常使用的物质,以及其相对应常使用的气流角度。 This gas stream may be a specific angle of view of the wafer to be dried is changed and different materials, as listed in table of FIG. 8B, the substance is often used for example, and an air flow corresponding to the angle which is often used.

[0039] 此被供应到弯液面的IPA蒸气流产生了一个Marangoni力,其引起了与晶片举起方向相反的向下液体流,因此在凹面上的该晶片表面会被干燥。 [0039] This produces a Marangoni flow is supplied to the meniscus force IPA vapor, which causes the wafer lift direction opposite to the downward flow of liquid, so that the surface on the concave surface of the wafer is dried.

[0040] 为了要容纳以及排出在干燥部分观内的IPA蒸气,所以提供了废气歧管51和全(blanket)氮气歧管M,这些歧管的制作可以伸入位于喷洒机构50上面的干燥部分28的顶盖56。 [0040] In order to receiving and discharging the IPA vapor drying section concept, the exhaust manifold 51 is provided, and the whole (Blanket) nitrogen manifold M, which can be produced extends into the manifold 50 located above the spray dried portion of the mechanism the cap 5628. 气流组件(未图示)被耦合到喷洒机构50,废气歧管51和全氮气歧管M控制了IPA蒸气流率、废气流率和氮气遮掩流率。 Airflow assembly (not shown) is coupled to the spray means 50, exhaust manifold 51 and the nitrogen blanket manifold M controls the IPA vapor flow rate, exhaust gas flow rate and the flow rate of nitrogen gas mask. 此外废气管线(未图示)可以是被制作在输出部12的下方,经由输出部12可以维持一垂直的流线型的气流,并且可以将由干燥部分观散出的IPA蒸气稀释掉。 Further the exhaust gas line (not shown) may be fabricated below the output section 12 via the output section 12 can maintain a streamlined vertical airflow and can drying section was diluted by IPA vapor Concept dissipated out. 喷洒机构50通常是被放置在靠近凹面的地方,并且全氮气歧管M通常是被制作在靠近卸载端口37的地方。 Spray means 50 is generally placed close to the concave surface, and the nitrogen blanket manifold M is typically made near the place of unloading port 37.

[0041] 晶片处理-第一方案 [0041] The wafer processing - the first aspect

[0042] 图2A至图21是侧面立视图的结构概要图,其显示当晶片被本发明所提出的装置所传送时,该晶片所处的不同阶段。 [0042] FIGS. 2A through FIG. 21 is a side elevational view schematically illustrating the structure, which is displayed when the wafer transfer apparatus of the present invention are made, the wafer differing stages. 参照图2A,当一机械臂(例如走动横杆机械臂,未于此图示,于公元2000年4月沈日送件申请的美国申请专利案第09/558,815号中所揭示,,其10一并引用于此)经由负载端口34而将晶片W载入旋干部分26,喷嘴30与喷嘴32,都喷洒去离子水于晶片W的两个面上,此机械臂释放晶片于托架36上,然后由旋干部分沈退回其位于负载端口34上方的原始位置。 2A, the robot arm when a medium (e.g. crossbar walking robot arm, not shown here, in the year April 2000 Shen submittal date of U.S. patent application Ser. No. 09 / 558,815 disclosed ,, 10 which collectively incorporated herein by reference) via the load port 34 and the wafer W into the rinsing section 26, the nozzle 30 and the nozzle 32 are sprayed with deionized water to both surfaces of the wafer W, the robot arm to release the wafer holder the frame 36, and the sink points the rinsing retracted to its original position above the load port 34 is located. 一个光学传感器(未图示)检测到晶片存在于托架36 (图2B)上,并且送信号到促动器40,以启动链接系统38,使其由旋干部分沈转动到干燥部分28。 An optical sensor (not shown) detects the presence of a wafer in the carrier 36 (FIG. 2B) on, and sends a signal to the actuator 40, to start the link system 38, so that the rinsing section to the drying section 28 is rotated sink.

[0043] 托架36被制作的位置,是在没入室18a的底部上,或是与前述底部靠近的地方,而其制作的功能是可以传送晶片,由旋干部份26传送到干燥部分观。 [0043] The bracket 36 is made of the location, on the bottom of the submersion chamber 18a, or the place close to the bottom, and its production wafer transfer function is transmitted by the rotating parts of the drying section 26 to the CADRE View. 在此传送过程中,晶片都保持没入在液体面之下,因此托架36为了要接收晶片,由一垂直位置开始转动,为了晶片升高通过干燥部分观(图2C)而转动一个倾斜位置(例如,倾斜9度)。 In this transfer process, the wafer remains submerged below the liquid surface, the wafer carrier 36 in order to be received, a vertical position by the start of rotation to the wafer is raised by the drying section concept (FIG. 2C) and an inclined position rotated ( For example, the inclination 9 degrees).

[0044] 然后晶片W被举起,经由推进器44以一个举起速度向卸载部37靠近,其举起是以一进行速度(例如每秒十毫米),起始于当晶片顶端没入箱内液体时(此时即是干燥蒸气开始喷洒的时),直到晶片的下缘(例如下面部分的三十至四十毫米的部分的晶片)没入箱内液体。 [0044] Then the wafer W is lifted closer to the unloading section 44 to 37 via a lift speed of the pusher, which is held up for a rate (e.g. ten millimeters per second), starting from the top of the wafer when the tank is not liquid (i.e., this case is a drying vapor spray started) until the lower edge of the wafer (e.g., wafer portion of the lower portion of thirty to forty millimeters) submerged in the tank liquid. 当晶片下缘没入箱内液体中并且通过干燥蒸气时,此晶片会被以一种较慢(例如小于每秒五毫米)的速度举起,因为晶片较低的部分较不好将其干燥(起因于晶片的曲率), 在整个晶片干燥后,此晶片可以被以一种较高(例如高于每秒十毫米)的速度举起,以进入到传送位置。 When the edge of the wafer submerged tank liquid and vapor through the drying, the wafer is in a relatively slow (e.g., less than five millimeters per second) raised, because the lower portion of the wafer than bad dried ( speed due to the curvature of the wafer), the entire wafer, after drying, the wafer may be in a higher (e.g. greater than ten millimeters per second) is lifted, to enter the transfer position. 当晶片被举起,晶片边缘会因为重力而倚靠在两个平行倾斜引导46上,该导引是沉没在液体中。 When the wafer is lifted, because the edges of the wafer against the force of gravity in two parallel inclined guide 46, the guide is submerged in the liquid.

[0045] 当晶片W被举出液体表面时,该对喷洒机构50 (图2D)喷洒IPA蒸气以及氮的混合气体,于晶片W的两面所形成的凹面上。 [0045] When the wafer W is include the liquid surface of the spray mechanism 50 (FIG. 2D) spraying a mixed gas of IPA vapor and nitrogen, on the concave surface on both sides of the wafer W to be formed. 此IPA蒸气流可以借助或是不借助如图6所进一步参照说明的气流变流装置,而得以导引气流方向。 This IPA vapor stream may or not by means of the flow deflector is further described with reference to FIG. 6, and to guide the air flow direction. 此气流的该特定角度,可以视晶片上所要干燥的物质的不同而有所改变。 The specific angle of this air flow, can be different depending on the substance dried on a wafer may change.

[0046] 图8A是一个有助于说明蒸气气流的概略图。 [0046] FIG. 8A is a schematic view of assistance in explaining the vapor stream. 参照图8A,如图所示,蒸气/承载气体气流72的流动角度θ是相对于水/空气介面(并且/或者经过喷洒管子50的水平中心线)而量测出来的。 Referring to Figure 8A, as shown in FIG vapor / carrier gas stream is the flow angle θ 72 with respect to the water / air interface (and / or a horizontal center line through the spray pipe 50) and measured out. (在一较佳实施例中,喷洒管子50是被建构在晶片W侧面水平距离0. 5英寸的地方,此时的流动角度被选择在大约25度,并且喷嘴高度是被选择为ΗΝ,使得气流72敲击晶片W,大约在晶片/气流介面以上3. 7毫米,亦即高度Hv的地方。也可使用其他水平间隔、流动角度、喷嘴高度Hn以及蒸气敲击高度Hv)。 (In a preferred embodiment, the spray tube 50 is in the construction of the wafer W side of the horizontal distance of 0.5 inches where, at this time the flow angle of about 25 degrees is selected, and the nozzle height is chosen ΗΝ, such that 72 tap stream wafer W, the wafer around / airflow interface than 3.7 mm, i.e., where the height Hv may also be used other horizontally spaced, flow angle, nozzle height Hn and vapor tap height Hv). 图8Β表列出例示性物质材料的较佳流动角度(是相对于水/空气介面作测量)。 FIG 8Β table lists preferred exemplary flow angle substance material (relative to the water / air interfaces for the measurement). 表面物质是指晶片表面上所欲干燥的物质。 Substance means the surface on the wafer surface desired dry substance. 干进(dry-in)或湿进(wet-in)是指在干燥装置11内处理前的晶片是湿的或是干的,干出(dry-out)表示当晶片由干燥装置Ii移出时是干的。 Dry feed (dry-in) or wet feed (wet-in) refers to the process prior to the drying device wafer 11 is wet or dry, the dried (dry-out) represented by the drying apparatus when the wafer is removed when Ii It is dry. 黑钻石(BlackDiamond®) 是一个应用材料公司所可以使用的低k(介电常数)值的介电物质(例如掺杂有碳的氧化物)。 Black Diamond (BlackDiamond®) is a low-k dielectric substance Applied Materials, Inc. can be used (dielectric constant) values ​​(e.g., carbon-doped oxides). IPA蒸气流产生一个"Marangoni"作用力,此会导致与晶片举起方向相反的向下液体流,藉此,在凹面上方的晶片表面会被干燥化。 IPA vapor flow to produce a "Marangoni" force, this will lead to lifting the wafer downward liquid flow opposite direction, whereby the upper surface of the wafer is concave desiccation.

[0047] 在干燥步骤中,IPA蒸气是经废气歧管51,由处理部分10排出,并且氮气流被导向横跨过输出部分37 (经由全氮气歧管54),以制止IPA蒸气逸散出处理部分10。 [0047] In the drying step, IPA vapor through the exhaust manifold 51 is discharged from the processing section 10, and is directed across a stream of nitrogen through the output portion 37 (via the nitrogen blanket manifold 54), to stop the IPA vapor escape processing section 10. 此气体传递组件(未图示)控制IPA蒸气流、废气流率以及全氮气气流流率。 The gas delivery assembly (not shown) controls the IPA vapor flow, the flow rate of the exhaust gas stream and the nitrogen blanket flow rate.

[0048] 输出部分-第一方案 [0048] Output section - the first aspect

[0049] 在如图1至图21所显示的较佳实施例中,输出部分12包含平台58,是被用于在两个位置之间转动,该二位置是:用于由干燥部分28接收晶片的处理位置(图2E),以及用于输出晶片到传输机械臂的FAB介面位置(图2G)。 [0049] Preferably in FIGS. 1 to 21 shown in the embodiment, the output section 12 comprises a platform 58, is used to rotate between two positions, the two positions are: 28 for receiving the drying section the processing position of the wafer (FIG. 2E), and a FAB interface position (FIG. 2G) for outputting the wafer to the transfer robot. 处理位置是与晶片被由干燥部分观举起的倾斜位置相符,并且处理部份大致而言是为水平的。 Matching processing position is lifted by the inclined position of the drying section View wafer, and in terms of the processing part is substantially horizontal. 被耦合到输出部12的马达或是其他驱动机构,可以驱动平台58的转动。 Is coupled to a motor or other drive mechanism output unit 12 may be driven in rotation of the platform 58.

[0050] 输出部分12可以包含用来与晶片W被动地移动的捕获器60,其可以被架在线性球切片(linear ball slide)(未图示)上,该线性球切片的每一边的端点上都具有阻挡器。 [0050] The output section 12 may comprise for passively moving the wafer W with the catcher 60, which may be a linear ball holder sections (linear ball slide) (not shown), each side end of the linear ball slice having the stopper. 当平台58在处理位置(例如以一个与倾斜的导引46倾斜角相同的角度一九度,向处理部10倾斜)中时,此捕获器60因为重力的因素会掉到线性球切片的底部,可以利用光学传感器(未图示)来检测出此低位。 When the platform 58 in a processing position (for example, a guide 46 inclined nineteen degrees inclined at the same angle, inclined to the processing unit 10), the catcher 60 will fall because of gravity and the bottom slice ball linear , can be detected out of this low optical sensor (not shown). 捕获器60可以于两个相隔一距离的点上接触晶片,并且也能够紧密跟随晶片所处环境,而只在一容许误差值内变化,因此捕获器60可以对于精确的晶片定位有所帮助。 The catcher 60 may be in contact with two spaced a distance from the point on the wafer, and a wafer can be closely following their environment, but only within the allowable change in an error value, and therefore the catcher 60 may be helpful for accurate positioning of the wafer.

[0051] 输出部分12也可以包含抓指62 (finger 62),用于在晶片固定位置和晶片通行位置之间移动,当其在晶片固定位置,在晶片被举起而位于抓指62之上时,抓指62可以锁住并且固定晶片,因此可以容许推进器44撤回,留下晶片被抓指62和捕获器60固定在输出部分12中的位置上。 [0051] The output section 12 may also comprise grip means 62 (finger 62), for movement between the wafer and the fixed position of the wafer passage position when it is in the fixed position of the wafer, the wafer is lifted and positioned above the finger grip 62 , the finger 62 can be locked and fixed to the wafer, thus allowing the pusher 44 can be withdrawn, leaving the wafer is catcher finger 62 and 60 fixed to the output portion 12 in position. 抓指62可以是,例如汽缸(未图示)所促动,并且配备有一对的开关(未图示)以检测抓指62的晶片固定以及晶片通过位置。 The finger 62 may be, for example, a cylinder (not shown) is actuated, and is provided with a pair of switches (not shown) to detect a finger 62 of the wafer and the wafer is fixed through the position. 也可以利用光学检测器(未图示)来检测何时晶片已经到达抓指62以上足够高的位置,使得抓指62可以安全地假设晶片固定位置。 It may be an optical detector (not shown) to detect when the wafer has reached a sufficiently high grip means 62 above a position that finger 62 can be safely assumed that the wafer fixed position.

[0052] 晶片输出-第一方案 [0052] The wafer output - to the first aspect

[0053] 在举起晶片W通过干燥部分观前,平台58大致而言是垂直倾斜(例如以一个九度的角度倾斜)(如图2C所示),捕获器60是在其低位置,并且抓指62是在晶片通过位置上。 [0053] Before the wafer W is lifted by the drying section concept, the platform 58 is substantially perpendicular to the inclined terms (e.g., inclined at an angle of nine degrees) (shown in FIG. 2C), the catcher 60 is in its low position, and the finger 62 is in position on the wafer through. 当晶片W离开干燥部分28 (如图2D所示),其推动捕获器60 (例如接触的两个点),并且导致捕获器60抗拒重力而向上移动。 When the wafer W is away from the drying section 28 (FIG. 2D), which push the catcher 60 (e.g., two points of contact), and causes the catcher 60 is moved upward to resist gravity. 此晶片W因此固定在三点(经由推进器44以及捕获器60)之间,当推进器44到达其高位时,抓指62被启动而来到晶片固定位置,以将晶片固定在平台58上,然后推进器44撤回。 The wafer W thus fixed between the three points (44 and the pusher 60 via the catcher), when the pusher 44 reaches its high position, while finger 62 is actuated to position the wafer holder, a wafer is fixed to the platform 58 and then withdraw the propeller 44. (抓指62显示在图2E中的晶片固定位置中)因为捕获器60随着升起的晶片W—起被动地移动,所以在传送进入输出部分12的时候,晶片摩擦和所产生的微粒都得以大量减少。 (Finger 62 fixed to the display position of the wafer in FIG. 2E) because the catcher 60 W- passively move from rising as the wafer, so that the transfer into the output section 12 when the wafer friction and the resulting particles are It is significantly reduced.

[0054] 当晶片W被固定在平台58上时,平台58转到其水平位置(如图2F所示),汽缸64 (图1),其可包含一可调整式制动器和震动吸收器(未图示),并且可以被用来将平台58 降低到一个已定的输出位置,例如,在一个晶片握持器(图2H)可以抽出晶片W处做一升起动作的地方。 [0054] When the wafer W is fixed on the platform 58, the platform 58 to its horizontal position (FIG. 2F), a cylinder 64 (FIG. 1), which may include an adjustable brake and shock absorber (not shown), and may be used to reduce the internet 58-1 has been given output location, e.g., a wafer holding device (FIG. 2H) of the wafer W can be withdrawn at the place to make a raising operation. 然后抓指62如图2H所示那样撤回,并且晶片握持器将晶片W拿起以将其转换到另一个位置(例如,转换到卡匣)。 The finger is then withdrawn as shown in FIG. 62 2H, and the wafer holding device picks up the wafer W to be converted to another location (e.g., conversion to a cassette). 然后平台58回到其大体是垂直倾斜的处理位置(图21),以准备好接收下一个处理好的晶片Ψ,而使其当被由干燥部分观举起时,作为下一个处理中的晶片W'。 Platform 58 is then returned to its substantially vertical position inclined process (FIG. 21), is ready to receive the next processed wafers [Psi], whereas when it is lifted when the dryer section concept, as the next wafer processing W '.

[0055] 在本发明的较佳实施例或是其他更多的实施例中,可以使用精密的气体传递和废气排放组件(未图示),藉此以传递异丙醇(isopropyl alchol, IPA)蒸气、氮气以及废气到干燥装置11 (例如,靠近喷洒机构)。 [0055] In the preferred embodiment of the present invention or more other embodiments may be used sophisticated gas delivery and exhaust assembly (not shown), thereby to transfer isopropanol (isopropyl alchol, IPA) steam, nitrogen, and an exhaust gas to the drying apparatus 11 (e.g., near the spray means). 例如干燥而干净的空气伴随以一个或更多个控流管(Venturis)(未图示)可以提供其排出(例如气体管线(未图示)可以供应清洁干燥的空气到嵌于卸载端口37附近的控流管的压力部分以供排放)。 For example, clean air drying accompanied by one or more of the flow control tube (Venturis) (not shown) may be provided discharged (e.g. gas line (not shown) may be supplied to the clean, dry air near the port 37 fitted to the unloading part of the pressure control flow tube for discharge).

[0056] 为了要将IPA/氮气流提供到喷洒机构50,一个质量流控制器(未图示)可以提供一个预设气流量的氮气流,供应到IPA喷口(未图示)。 [0056] To To IPA / nitrogen stream is supplied to the spray means 50, a mass flow controller (not shown) may provide a predetermined flow of nitrogen gas flow, IPA is supplied to the nozzle (not shown). 至少在一实施例中,一个1.4公升的喷口被用来传递IPA/氮气混合气体,其具有的成分大约5%的IPA,当然也可以使用其他尺寸的喷口以及/或者其他浓度的IPA。 In at least one embodiment, a 1.4 liter nozzle is used to pass IPA / nitrogen mixed gas having a composition of about 5% of IPA, of course, other sizes may be used spout and / or other concentrations of IPA.

[0057] 在依据本发明所提出的另一个特定的较佳实施例中,此喷口可以配备有三个准位传感器:低、高以及高-高,首二个准位传感器,被使用的场合可以是,例如,在IPA喷口的自动重新填充期间。 [0057] In accordance with another particular preferred embodiment of the present invention proposed, the nozzle may be equipped with three level sensors: low, high and high - high, the first two level sensors, it may be used where are, for example, during the automatic re-fill spout in the IPA. 而后者的高-高传感器可以被使用的场合是,例如,作为硬件互锁,以避免重新充填时过度填充喷口。 High latter - height sensor applications can be used are, for example, as a hardware interlock to avoid over filling spout when refilling. 一个被加压的供应容器(未图示),例如一公升或是适合容量的容器,可以被使用来对喷口重新填充IPA液体。 A pressurized supply vessel (not shown), or for example, a liter capacity container, IPA liquid can be refilled to be used for the spout. 此供应容器可以包含一个低准位传感器, 并且在其低准位传感器被触发时,可以自动地或是人工手动地进行重新填充。 This container may comprise a low supply level sensor, and its low level sensor is triggered, or may be automatically performed manually refilled.

[0058] 全氮气气流流率(例如为了防止IPA蒸气气流由处理部10逸散而出)可以利用针状阀门或是其他合适的机构加以控制,为了安全的目的,清洁的干燥空气以及全氮气供应管线任一个都可以被加上气流开关(例如当废气或是全氮气气流丧失时,硬件互锁气流开关可以被用来关掉IPA蒸气供应),压力调节器可以被用来控制每一个供应管线中的压力。 [0058] Full flow rate of nitrogen stream (e.g., to prevent IPA vapor stream escaping out by the processing unit 10) may utilize a needle valve or other suitable means to control, for safety purposes, clean dry air and nitrogen blanket a supply line may be coupled to any air flow switch (e.g., when the exhaust gas stream of nitrogen or full loss, hardware interlock switch can be used to turn off the gas flow steam supply IPA), a pressure regulator may be used to control the supply of each pipeline pressure.

[0059] 输出部-第二方案 [0059] Output section - second aspect

[0060] 图3A至图3B,分别是依据本发明所提出的第二较佳实施例所提出的输出部分12, 其概略的侧视图和俯视的概略图。 [0060] FIGS. 3A-3B, the output portion 12, respectively, which is a schematic side view and a top schematic view according to the second preferred embodiment of the present invention proposed proposed. 此处依据本发明所提出的图3A至图;3B中的装置11a,其包含围绕输出部分12的围体111,输出部分12的可传动平台158可以包含两个或更多个晶片接收器113a及113b,参照图1至图21,每一个都包含捕获器60和抓指62。 Here the present invention based on the proposed 3A to; means 11a in 3B, there enclosure comprising 111 around the output section 12, output section 12 may drive the platform 158 may comprise two or more wafer receivers 113a and 113b, with reference to FIGS. 1 to 21, each of which comprises a catcher 60 and a finger 62. 在此较佳实施例中,可传动平台158是被用于水平地移动(例如,经由一个铅质螺旋物、汽缸、马达或类似件),所以被由干燥部分观所举起的晶片可以被第一或是第二晶片接收器113a、li;3b所接收。 In the preferred embodiment, can be used to drive the platform 158 is moved horizontally (e.g., via one of lead spirals, cylinders, motors or the like), it is dried by a part of the concept of the wafer may be elevated the first or second wafer receivers 113a, li; 3b received. 利用此种方式,得以让晶片产出最大化。 Use this way, to allow the wafer to maximize output. 当第一晶片可以被第一晶片接收器113a握住,以供晶片握持器(未图示)所提起,而此时第二晶片正被输出到第二晶片接收器113b, 反之的亦然。 When the first wafer 113a may be holding a first wafer receiver adapted for holding a wafer (not shown) is raised, a time when the second wafer is being output to the second wafer receivers 113b, and vice-versa versa .

[0061] 此围体111具有可以被建构在邻近于传送机械臂(未图示)的第一侧壁115a,此第一侧壁11¾具有开口117,经此开口,传送机械臂可以抽出晶片。 [0061] This enclosure 111 may be constructed having adjacent to the transport arm (not shown) of the first side wall 115a, this first side wall 117 has an opening 11¾ via this opening, the wafer transfer robot may be withdrawn. 围体111也可以具有位置在与第一例壁11¾相反的内部分隔壁115b,其用以将围体111分隔成两个气室Illa 与111b。 The enclosure 111 may have a partition wall portion 115b in a position opposite to the first wall 11¾ the embodiment, to which the enclosure 111 is divided into two plenum Illa and 111b. 第一气室Illa可以包围可传动平台158,并且也包围了足够空间以容许可传动平台向前或是向后传,并且也可以接收晶片在第一或第二晶片接收器113a与11¾上。 Illa may surround the first gas chamber 158 may drive the platform, and also surrounds permit sufficient space to accommodate forward drive internet or backward pass, and the wafer may be received on the first or second wafer receivers 113a and 11¾. 第二气室Illb可以包围用以传递可传动平台158以及任何其他移动部件(大体上由图:3B中的参考数字159所代表)的机构。 Illb may surround the second plenum for transmitting drive platform 158 and may be any other moving parts: means (generally indicated by reference numeral in FIG. 3B 159 represents) is. 这样分隔两个气室的内部分隔壁115b,可以具有多个小开口119(图3A),其通常涵盖了整个内部分隔壁1Mb。 The partition wall portion 115b so that the two air chambers, may have a plurality of small openings 119 (FIG. 3A), which usually covers the entire inner wall portion 1Mb. 当相邻于传动机械臂的区域的压力, 较相邻于依据本发明所提出的装置Ila的区域的压力为高时,空气可能流动式地流动在开口117中,越过第一及第二晶片接收器113a和113b(如箭头F所表示的,平行于晶片的主要表面),并且通过小开口119到达第二气室111b,第二气室Illb可以通过废气排放系统而排放废气。 When the pressure region adjacent to the drive of the robot arm, based on the pressure in the area more adjacent Ila of the proposed apparatus according to the invention is high, air may flow type to flow in the opening 117, across the first and second wafer receivers 113a and 113b (as indicated by the arrow F, parallel to the major surfaces of the wafer), and reaches the second gas chamber 111b through the small opening 119, the second gas chamber through the exhaust gas can be Illb exhaust system.

[0062] 此外,废气管线(未图示)位于输出部分12之下,经由输出部12维持一可接受的垂直流线型气流,并且也稀释由干燥部分观逸散而出的任何IPA蒸气。 [0062] In addition, an exhaust line (not shown) located below the output section 12, the output unit 12 to maintain an acceptable aerodynamic vertical airflow, and also dilute any IPA vapor escape out from the drying section via the View. 输出部分112的围体111作用如一外加的污染机构,以防止IPA蒸气进入环绕干燥装置Ila周围的空气中。 111 contribution to the output portion 112 is applied as one body around the pollution mechanism to prevent IPA vapor into the air surrounding the drying apparatus Ila surrounding. 13[0063] 为了要容许晶片可以被输出到第一晶片接收器113a,而不会阻挡主容箱118的旋干部分沈,主容箱118的前壁121(也就是旋干部分沈的前壁),可以如图3所示那样,使其具有一定角度(例如九度)。 13 [0063] In order to allow the wafer to be output to the first wafer receivers 113a, without blocking the tank before the main points of the rinsing sink 118, the main front wall 121,118 of the tank (i.e. rinsing section sink wall) may be as shown in FIG. 3, it has a certain angle (e.g., nine degrees). 通过将旋干部分26的前壁弯曲一角度,负载端口34将可以被制作在一个离输出部分37足够远的地方,以避免被围体111所阻挡,但是处理部分10的液体体积的增加,并没有和使用直的前壁时所会增加的体积一样多。 By rinsing section front wall 26 is bent at an angle, the load port 34 may be fabricated from an output portion 37 sufficiently far to avoid being blocked by the enclosure 111, but increases the processing portion 10 of the liquid volume, and did not use the front wall of the volume will increase when straight as much. 在使用前述具有角度前壁的实施例中,托架36可以被举起到一个靠近负载端口34的位置,使得晶片握持器可以放置晶片于被举起的托架36。 In an embodiment using the aforementioned front wall having an angle, the bracket 36 may be lifted to a position near the load port 34, so that the wafer holding the wafer may be placed on the cradle 36 is elevated. 这样一个举起的托架36,容许使用没有能力转动以让负载端口34和处理部分10角度符合的晶片握持器。 Such a lift bracket 36, allowing the use of inability to allow rotation of the load port 34 and the handle wafer holding portion 10 matching the angle. 这一个可提高的托架36可以被耦合到一个导引,此导引的位置是沿着具有某角度的前壁的内部表面,并且经由前壁可以磁性地耦合到外部促动器,并且因此可以与可提高的推进器44具有相类似的运作方式。 This can increase a bracket 36 may be coupled to a guide, this position is guided along a front wall having an internal surface at an angle, and can be magnetically coupled to an external actuator via a front wall, and thus can be increased with the propeller 44 has a similar mode of operation.

[0064] 晶片输出-第二方案 [0064] wafer output - the second aspect

[0065] 图4A至图41,是显示晶片在如图3A到图所显示的另一个不同的装置11a,于不同的处理阶段时的概略的侧视图,如图4A所示,晶片Wl被放置在输出平台158的晶片接收器113a上,并且输出平台158是在其最右边的位置,而第二晶片接收器11¾被放置的位置,是使其可以接收由干燥部分观所输出的晶片。 [0065] FIGS. 4A to FIG. 41, the wafer is displayed on a different device to the FIG. 3A shown in FIG 11a, in schematic side view during various processing stages shown in Figure 4A, a wafer is placed Wl wafer 113a on the receiver output platform 158, the platform 158 and the output is in its rightmost position, the second wafer is placed 11¾ the receiver position, so that it may receive a wafer from the drying section View output. 晶片W2是被放置在没入的托架36上, 并且推进器44所在的位置是在托架36下方。 Wafer W2 is not placed on the carriage 36, and the advanced position 44 is located below the bracket 36. 在图4B中,推进器44被举高(例如经由托架36中的槽或是开口),以由托架36上举起晶片W2,并且托架36已经被转回到垂直位置。 In Figure 4B, the pusher 44 is held high (e.g., via a bracket 36 or the slot opening), to lift the wafer W2 on the bracket 36, the bracket 36 and has been transferred back to the vertical position.

[0066] 在图4C中,推进器44已经到达升高的位置,此位置是晶片W2通过卸载端口37的位置,并且晶片W2的顶缘接触到捕获器60。 [0066] In Figure 4C, the pusher 44 has reached the raised position, this position is the position of wafer W2 by unloading port 37, and the top edge W2 of the wafer 60 contacts the catcher. 当晶片W2移动进入卸载端口37,IPA蒸气喷洒、 全氮气以及废气开始启动,图4C也显示托架36已经举起,并且被放置在负载端口34中,以准备好接收下一个要进入的晶片。 When the wafer W2 is moved into the unloading port 37, IPA vapor spray, and an exhaust gas nitrogen blanket started, the carriage 36 also shown in FIG. 4C has been lifted and placed on the load port 34, to prepare to receive the next incoming wafer to a .

[0067] 如图4D所示,第一晶片Wl已经被由围体111的第一晶片接收器113a所抽出,并且捕获器60已经回其较低的位置,第二晶片W2已经提升到第二晶片接收器11¾上的一个抓指62的上方,抓指62已经移动进入到第二晶片W2的下方,并且推动器44已经降低其位置,并不在支持第二晶片W2,其于此时是被握持在抓指62和捕获器60之间。 [0067] As shown in FIG. 4D, the first wafer Wl has been enclosed by the body 111 of the first wafer receiver 113a is extracted, and the catcher 60 has gone back to its lower position, the second wafer W2 has been raised to a second a wafer on top of the receiver 11¾ grasping means 62, the finger 62 has moved downward into the second wafer W2, and the pusher 44 has lowered position thereof, does not support a second wafer W2, which is in this case are gripping between the finger grip 62 and the catcher 60. 第三晶片W3 被负载在托架36之上,并且托架36已经降低到处理部10的底部,值得注意的是因为第三晶片W3经由可能是在被没入喷嘴32以及/或是未没入喷嘴30 (未图示)所喷洒的负载端口;34而降低其位置。 Third wafer W3 is supported on the bracket 36, and the carriage 36 has been lowered to the bottom of the processing unit 10, it is noted that because the third wafer W3 may be via a nozzle 32 being submerged, and / or is not submerged nozzle 30 (not shown) of the load port sprayed; 34 lowered position.

[0068] 如图4E所示,平台158被移动到其最左侧的位置,使第一晶片接收器113a所处的位置能够接收由干燥部份观所输出的晶片,此推进器44已经降低到一个位置低于托架36 所提高,并且托架36将会旋转第三晶片W3,使其由旋干部分沈到干燥部分观。 [0068] FIG. 4E, the platform 158 is moved to its leftmost position, the position of the first wafer receiver 113a can receive the wafer is located by the output portion of the drying concept, the pusher 44 has been reduced to a position below the bracket 36 is improved, and the bracket 36 will rotate the third wafer W3 of, so that the rinsing section to the drying section sink concept.

[0069] 如图4F所示,托架36转动到干燥部分36中的第三晶片W3的位置,并且第三晶片W3的上侧部分停驻在晶片导引46上。 [0069] FIG. 4F, the carrier 36 is rotated to the position of the third wafer W3 dried in portion 36, and the upper side portion of the third wafer W3 is parked on a wafer guide 46.

[0070] 如图4G所示,推进器44已经升高,举起托架36的第三晶片W3而升高,并且托架36转动而回到一个垂直位置。 [0070] FIG. 4G, the pusher 44 has been raised, the third wafer W3 of lift bracket 36 is raised, and the carriage 36 is rotated and returned to a vertical position.

[0071] 如图4H所示,经由IPA蒸气喷洒,推进器44开始举起第三晶片W3而升高,并且经由全氮气,到达第三晶片W3的顶端接触到第一晶片接收器113a的捕获器60。 [0071] As shown in FIG 4H, IPA vapor through the sprinkler, the pusher 44 starts to lift the third wafer W3 is raised, and via total nitrogen, reaches the top of the capture of the third wafer W3 contacts the first wafer 113a of the receiver 60. 该托架36已经举高,以将其本身放到负载端口34中,以准备好接收下一个要进入的晶片。 The bracket 36 has a high lift to the load port 34 put itself in order to be ready to receive the next incoming wafer.

[0072] 如图41所示,第二晶片W2已经由输出围体111的第二晶片接收器11¾所抽出,并且捕获器60已经回到其较低的位置,此第三晶片W3已经被举起在第一晶片接收器113a 上,而到达抓指62上方,抓指62已经移动进入第三晶片W3之下的位置,并且推进器44已经降低其位置,已不再支持第三晶片W3,其此时被握持在介于抓指62和捕获器60之间的位置。 [0072] shown in Figure 41, the second wafer W2 has been enclosed by the output 111 of the second wafer receivers 11¾ extracted, and the catcher 60 has returned to its lower position, this third wafer W3 has been cited since the first wafer receivers 113a, and reaches the upper grasping means 62, finger 62 has moved into position below the wafer W3 of the third, and the pusher 44 has lowered position, no longer support the third wafer W3 of, at this time it is held in the position interposed between the finger grip 62 and the catcher 60. 第四晶片W4负载到托架36之上,并且托架36已经降低到旋干部分10的底部上,值得注意的是因为第三晶片W4经由可能是在被没入喷嘴32以及/或是未没入喷嘴(未图示) 所喷洒的负载端口34而降低其位置。 The fourth wafer W4 loaded onto carriage 36 and the carriage 36 has been lowered onto the bottom of the rinsing section 10, it is noted that because the third wafer through W4 may be submerged in the nozzle 32 and / or non-submerged nozzle (not shown) of the load port 34 to reduce its spray position.

[0073] 处理部份-第二方案 [0073] The processing part - second aspect

[0074] 图5是为依据本发明所提出的一个干燥装置211的侧视概略图,其中只显示处理部份10。 [0074] FIG. 5 is a drying apparatus according to the present invention set forth a schematic side view of FIG. 211, wherein the display processing portion 10 only. 此处理部份10是依据本发明所提出的第二个方案所建构,特别的是不使用要浸入晶片(例如显示于图1至图21的没入室18a)的主室。 This processing part 10 is constructed according to the second embodiment of the present invention proposed, in particular to the use of immersion is not a wafer (e.g., shown in Figures 1 to submersion chamber 18a 21) of the main chamber. 在本发明所提出的第二方案中, 主室对以液体对于未没入的晶片喷洒,以旋干并且/或是维持在旋干气室226中的晶片的潮湿度,并且以液体对于未没入的晶片进行喷洒,以产生在干燥器室2¾中的弯液面(用于Marangoni干燥方法)。 In a second embodiment proposed by the present invention, the main chamber of the liquid to the non-submerged wafer is sprayed to spin dry and / or maintained in the spin-dry gas chamber 226. moisture of the wafer and a liquid for non-submerged the wafer is sprayed to produce a meniscus 2¾ the dryer chamber (for Marangoni drying method). 只有少数硬件差异存在于为了没入器室处理方式所建构的处理部分,以及为了非没入器室处理方式所建构的处理部分之间? Only a few hardware differences between the process in order not part of the treatment chamber constructed, and a processing section for non-submerged chamber handling the construction?

[0075] 如参照图5所可以看见的,图1至图21的溢流溢流堰20和20a可以被省略,通常所使用的一对顶头喷嘴30所制作的位置,是使得当晶片进入而经过负载端口34时,其可以对晶片的前表面和后表面都喷洒液体。 [0075] As can be seen with reference to FIG. 5, FIGS. 1 to 21 of the overflow weir 20 and 20a may be omitted, the pair of nozzle head 30 is produced generally used position, such that when a wafer enters and passes when the load port 34, which may be the front and back surfaces of the wafer are sprayed liquid. 在图5所显示的较佳实施例中,隔离墙M制止了所喷洒的液体由旋干部分2¾溅入到干燥部分2¾所提供的液体喷嘴上方的区域(并因此制止了已经干燥的晶片不小心被重新弄湿)。 The preferred embodiment shown in the FIG. 5 embodiment, the wall M to stop the sprayed liquid from the rinsing section 2¾ liquid spilled into the dryer section 2¾ nozzle provided above the region (and thus stop the wafer has not drying careful re-wet). 在干燥部分2¾中,一个额外的液体供应喷洒机构50a被提供在IPA供应喷洒机构50之下。 In the drying section 2¾, one additional spray liquid supply mechanism 50a is provided below the spray means 50 IPA supply.

[0076] 在操作时,正在进入的晶片被喷洒的液体,例如去离子水,其可以有或没有包含介面活性剂,或是其他清洁用的化学药剂,例如应用材料公司的ElectraClean™溶液,以用于旋干以及/或是维持晶片表面的潮湿度。 [0076] In operation, the wafer is being sprayed into the liquid, for example deionized water, which may or may not contain an active agent interface, or other cleaning chemicals used, such as Applied Materials, Inc. ElectraClean ™ solution to dry for screwing and / or maintain the wetness of the wafer surface. 当晶片离开干燥部分228时,晶片被喷洒以例如去离子水的液体,其中可以掺杂或是不掺杂介面活性剂或是其他清洁剂,此出口液体喷洒形成了一个横跨晶片的均勻弯液面。 When the drying portion 228, the wafer is sprayed with a liquid such as deionized water, wherein the interface may be doped or undoped active agents or other cleaning agents, this liquid spray outlet formed leaving a uniform across the wafer bending the wafer the liquid level. 此IPA喷洒机构50喷洒IPA蒸气到凹面上,因此创造了可以将晶片干燥化的Marangoni流。 This IPA IPA vapor spray mechanism 50 to spray on the concave surface, thereby creating wafer may be dried of Marangoni flows. 值得注意的是晶片传输是在处理部10,并且晶片输出到输出部分12可以如图1至图41所描述的那样。 It is noted that in the wafer processing unit 10 is transmitted, and the wafer 12 can be output to the output section 41 as described in FIG. 1 to FIG.

[0077] 气流变流装置 [0077] The flow deflector

[0078] IPA蒸气传送到水/空气/水介面(亦即凹面)的效率,可以因为对于每个IPA传递蒸气喷嘴/管50建立蒸气气流变流装置而获得改善,一个这样建构的装置的概略图显示在图6中。 [0078] IPA vapor is transferred to the water / air / water interface (i.e., concave) efficiency can be improved because the vapor delivery nozzle for each of the IPA / tube means for establishing a vapor stream converter 50, a schematic construction of such a device FIG 6 is shown in FIG. 虽然在实务上的喷管50以及气流变流装置68,可以被提供在晶片W的每一个侧边,为了绘制上的简化,喷管50 (可以包含上述的喷嘴50)以及气流变流装置68只显示在晶片W的一个侧边上。 Although in practice the nozzle 50 and the flow deflector 68, and the flow deflector 68 may be provided at each side of the wafer W, in order to simplify the drawing, the nozzle 50 (nozzle 50 may include the above) only on one side of the wafer W. 虽然晶片W可以用一个倾斜角(虽然可以使用其他的角度,但是在此例中是利用为垂直线算起约九度的角度)离开水76的表面,晶片W也可以如图所示的, 离开垂水76时,是垂直于其表面的。 While the wafer W may be a tilt angle (although other angles may be used, but in this case using an angle of about nine degrees counted as vertical lines) leaving the water surface 76, the wafer W may be as shown, leaving Tarumi 76, it is perpendicular to its surface.

[0079] 在本发明所提出的一较佳实施例中,气流变流装置68可以利用两个部分套管的形式,其是用于配合喷嘴50,气流变流装置68限定出一个楔型空间70,一股气流的IPA蒸气(例如混杂以氮气的承载气体)被喷洒,并且被设计将气流72以一特定的角度导流入楔形空间70中,此角度是相对于,例如经过喷嘴50中心并且平行于水表面,的一条水平线L。 [0079] In the proposed invention, a preferred embodiment of the present embodiment, the flow deflector 68 may be utilized in the form of two portions of the sleeve, which is for engaging the nozzle 50, flow deflector 68 defines a wedge-shaped space 70, an IPA vapor stream (e.g., mixed in a nitrogen carrier gas) is sprayed and the gas stream 72 is designed to guide a specific angle wedge-shaped space 70 flows, the angle with respect to, for example, through the central nozzle 50 and parallel to the water surface, a horizontal line L. 气流变流装置68的第二区域(例如低翼74)可以浸(dip)在水76的下面,以限制水暴露在IPA蒸气下的部分的体积。 The second region 68 of the flow deflector means (e.g., low-wing 74) can dip (DIP) below the water 76, to limit the volume of the exposed portion of the water in the IPA vapor. IPA蒸气的气流72通常是使用向下的角度,如图6所示那样, 打在气流变流装置68的第一区域69的内部表面78。 IPA vapor stream 72 is typically used at a downward angle, as shown in FIG 6, the airflow hit the interior surface of the first region 68 of the apparatus 78 of the converter 69. 然后IPA蒸气的气流72可以被内部表面78反射(未图示)到形成于水/空气/水介面的凹面80上。 Then IPA vapor stream 72 may be internally reflective surface 78 (not shown) formed in the water / air / water interface on the concave surface 80. 在本发明所提出的一个或更多的较佳实施例当中,IPA气流72与内部表面78之间的角度并不会超过四十五度,虽然IPA气流72角度的选择,通常是使得IPA气流以一个预期的角度范围内(如以下所述并参照图8A到图8B)打在凹面80上,并且/或是以一个预期的气流速度使得IPA蒸气传递到凹面80上得以最佳化。 In one or more preferred embodiments of the proposed invention which, the angle 78 between the inner surface of the IPA stream 72 and no more than forty-five degrees, while the angle selection IPA stream 72, typically such that the IPA gas stream to within a desired angle range (as described below with reference to FIGS. 8A to FIG. 8B) hit the concave surface 80, and / or at a desired gas flow rate such that the IPA vapor is transmitted to the concave surface 80 is optimized.

[0080] 在一个用以说明本发明而举例的实施例中,气流变流装置68具有一个细缝开口82,其宽度可以是0. 05英寸,并且细缝可以是被隔开的,例如远离晶片W达0. 1英寸的地方,使其有效率地传递IPA蒸气到凹面80。 [0080] In an embodiment of the present invention and to illustrate a way of example, the flow deflector 68 has a slit opening 82, which width may be 0.05 inches, and the slit may be spaced away from e.g. wafer W of 0.1 inches where it efficiently transferred to the concave surface 80 IPA vapor. 同理,对于其他宽度的细缝、在水76表面上方不同距离以及/或者与晶片W具不同的距离,这些上述条件也都可以适用。 Similarly, the other for the width of the slit, the upper surface of the water 76 at different distances and / or the wafer W having different distances, these aforementioned conditions can be applied. 气流变流装置68 可以位于对于水76表面具有四十五度的一个角度上,然而也可以利用其他的角度。 The flow deflector 68 may be located on the surface of water 76 having an angle of forty-five degrees, but other angles may be utilized. 细缝开口82的角度通常会被定在刚好位于凹面80下方。 The opening angle of the slit 82 will generally be set at just below the concave surface 80.

[0081] 此气流变流装置68是用以限制曝露在IPA蒸气下的水的体积,因此可以降低IPA 的浪费和使用量,同时也改进了干燥器效率以及其性能,并且降低了安全性的风险。 [0081] This flow deflector 68 is to limit the exposure to water vapor in the volume of IPA, the waste can be reduced and the amount of IPA while also improving the performance and efficiency of the dryer, and reduces the security risk. 在依据本发明所提出的一较佳实施例中,虽然其他数据仍能进行,但是一般而言,对于300毫米的晶片而言,曝露在IPA蒸气下的水的体积的范围大约是零至十二毫升(milliliter),对于200毫米的晶片而言,曝露在IPA蒸气下的水的体积的范围大约是零至八毫升。 Volume range in accordance with the present invention, a preferred embodiment of the proposed embodiment, although other data is still performed, but in general, for a 300 mm wafer, the exposure of the water in the IPA vapor is approximately zero to ten two ml (milliliter), for 200 mm wafers, the exposed to IPA vapor volume of water ranges from about zero to eight milliliters.

[0082] 若没有使用气流变流装置68,IPA蒸气的气流72可以在一角度范围上,约为22度到30度,打在水76表面上,此已经被发现适合于形成在晶片上的数个不同种类的薄膜的干燥化工序,其他入射角也可以使用在本发明中。 [0082] Without using flow deflector 68, IPA vapor stream 72 can be in a range of angles from about 22 degrees to 30 degrees, hit the surface of the water 76, this has been found to be suitable is formed on the wafer several different types of film drying step, the other angle of incidence can also be used in the present invention. 此气流变流装置68可以用单一个整体物件,或者是两个以上的物件合并而成,气流变流装置68可以由不锈钢或是其他适合的物质来作成。 This flow deflector 68 may be a single integral article, two or more objects merger flow deflector 68 may be made from stainless steel or other suitable material.

[0083] 低浓度的IPA混合气体 [0083] IPA mixed gas of a low concentration

[0084] 要进一步改善此清洁/干燥化组件的安全性以及效率,可以降低IPA/负载气体的混合气体中的IPA蒸气浓度(例如降低到0. 2% ),同时也可以增加混合气体的气体流率(例如至少每分钟二至三公升,常常使用的是每分钟五公升)。 [0084] To further improve this cleaning / drying assembly of safety and efficiency, can reduce the concentration of the mixed gas IPA IPA vapor / gas load (e.g., reduced to 0.2%), while increasing the gas may be mixed gas flow rate (e.g. at least two to three liters per minute, often used is five liters per minute). 此增加的气流流率补偿了低浓度的IPA气体,并且也因此达到高效率以及高干燥率下的低缺陷的干燥工序(使得200 毫米的晶片,在假设都是使用相同的晶片升高速度的条件下,例如每秒十毫米,其干燥时间是20秒)。 This increased airflow rate compensates for low concentrations of IPA gas, and thus achieve a low defect drying step at high efficiency, and high drying rate (200 mm wafers that are the same in the rate of rise of the wafer is assumed under conditions, e.g. ten millimeters per second, 20 seconds drying time). 图7是一个画出了具有粒径0. 12微米(图3中,一般称的)的粒子的数目的图形,其为发现于被气体(氮)干燥的晶片上,其中的气体具有不同的IPA浓度和不同的气流流率。 FIG 7 is a graph depicts the number of particles having a particle diameter of 0.12 m (in FIG. 3, referred to the general), which is to be found in the gas (nitrogen) drying the wafer, wherein a gas having a different IPA concentrations and various flow rates of gas flow. 结果可能也因为喷嘴直径、喷嘴相隔于晶片表面的距离、气流变流装置的使用及角度等因素而有不同。 Since the nozzle diameter may result, the nozzles spaced the distance of the wafer surface, using the apparatus and the flow angle of factors have different airflow becomes. 对于每分钟五公升的承载气体流率所做的实验性数据,显示当IPA蒸气的浓度由降低到0.2%时,硅上面的缺陷和包含晶片的低k介电物质上面的缺陷,并没有增加。 For experimental data carrier gas flow rate of five liters per minute made, shows that when the concentration of IPA vapor is reduced by the 0.2%, the silicon wafer contains defects and above the low-k dielectric material above electrical defects, and does not increase .

[0085] 如前面所叙述的,当晶片W的较低部分被干燥时,晶片举起速度可以被降低。 [0085] As previously described, when the lower portion of the wafer W is dried, the wafer lifting speed may be reduced. 相似地,当晶片W的较低部分已经干燥化时,在IPA/承载气体混合气体中的IPA浓度可以增加, 并且/或者IPA/承载气体混合气体的气流流率可以增加。 Similarly, when the lower portion of the wafer W has been dried, the IPA / carrier gas mixture in the IPA concentration in the gas may be increased and / or the IPA / carrier gas flow rate of the mixed gas stream may be increased. 如众所周知的,以上的氮气可以被其他惰性气体所取代仍能正常进行制作工序,而同时广为了解的是,IPA可以被其他传统用于Marangoni干燥工序等的有机气体所取代,并仍能正常进行制作工序。 As is well known, more nitrogen may be replaced by other inert gases still normal manufacturing process, while at the same widely appreciated, IPA may be replaced with other conventionally used for Marangoni drying step an organic gas, and still normal for production processes.

[0086] 当此发明连同其所描述的较佳实施例被揭示之后,其他的实施例如众所周知的, 也都落在本发明的精神和范围中。 [0086] When this invention is described in conjunction with preferred embodiments, after they are disclosed, for example, other known embodiments also fall within the spirit and scope of the invention. 特别的是,本发明所提出的用来举起的机制,以及本发明所提出的IPA气流变流装置,显然地可以被使用在任何干燥化系统中,并且不限定只能使用在所揭示的系统中。 In particular, the proposed mechanism is used to raise the present invention, and IPA stream proposed by the present invention inverter device, can obviously be used in any drying system, and is not limited to use only disclosed in the system. 相似地,当基材进入旋干工序箱中时,可以使用喷嘴(水下的以及/ 或是水/液体面之上的)来进行旋干工序,然而也可以用在本发明实施例所揭示以外的系统中。 Similarly, when the substrate enters step spin-dry box, the nozzles may be used (and / or water / liquid above the underwater surface) to spin dry process, but can also be used in the disclosed embodiment of the present invention outside the system. 具有一倾斜角度的室壁,配合以用一已知方向输出晶片的组件,被认为是具有发明性的,作为一个被动的输出捕获器。 A wall having an inclination angle, with the assembly with a known direction of the output of the wafer, is considered to be inventive, and output as a passive trap. 更进一步的发明特征,其包含用于传送晶片(特别是一个没入液体中的晶片),由第一角度在传送过程中转变到到第二角度的组件与方法,也包含一个组件,其用于传送晶片,由一个角度到下一个角度,以移动该晶片由对齐一输入部分,到此晶片对其输出部分。 A further feature of the invention, comprising means for conveying a wafer (in particular, a wafer is submerged in the liquid), the transition from the first angle during transport to the assembly method of the second angle, also comprising a component for wafer transfer from one angle to the next angle, to move the wafer by the alignment of an input portion, this portion of the wafer to its output. 因此,所能被了解的是,在此所描述的所有实施例只是解说举例,并且本发明所提出的装置可以使用以下的一个或多个特征。 Thus, it can be understood that all embodiments described herein are only illustrative of example, and the present invention, the proposed device can be used with one or more features.

[0087] 有些能被单独使用的发明特征如下所述: [0087] Some features of the invention can be used alone as follows:

[0088] •结合旋干部分和干燥部分,而没有旋干的晶片表面曝露在空气中的一个组件; [0088] • a binding component rinsing section and a drying section without spin dry the surface of the wafer is exposed in air;

[0089] •配备有用于改善移除介面活性剂和制作工序箱微粒(顶头喷嘴提供了最有效的旋干)的没入以及/或是顶头喷嘴的一个旋干部分; [0089] • equipped with means for improving the removal of interface-active agent and microparticle tank production process (nozzle head provides the most effective spin dry) is submerged and / or a rotating nozzle plug stem portion;

[0090] •具有两个部分,以分开负载和卸载部分的一个主要制作工序箱;[0091 ] •管子、喷嘴以及/或是气流变流装置,用于精确地递送IPA蒸气(例如传送到弯液面的顶端),以将IPA的消耗最小化; [0090] • having two portions, to separate the load and unload a major part of the production process tank; [0091] • pipes, nozzles and / or the flow deflector means for precise delivery of IPA vapor (such as to bend the top level), in order to minimize consumption of IPA;

[0092] · IPA喷洒管子,可以被精确地位于一个最佳角度方向上,以供应IPA到弯液面上;(参照申请日为2001年3月5日的、发明名称为喷洒棒的美国专利第60/273,786号, 现一并引用于此); [0092] · IPA spray pipe, can be accurately positioned on a preferred angular orientation, to supply IPA to the meniscus; (see filed March 5, 2001, and entitled spray bar U.S. Pat. No. 60 / 273,786, are incorporated herein by reference together);

[0093] •不碎裂的导引机构,其使用嵌入输出站顶端的一个"捕获器"; [0093] • guide mechanism is not broken, the output of which is embedded in the top of the station a "trap";

[0094] •托架,简化水面下晶片由旋干部传递到干燥部的过程; [0094] • bracket, simplifying the process of drying the water surface of the wafer is transferred from the rinsing section to;

[0095] •可变速度推进器,其具有一个提高速度机构; [0095] • variable speed propeller, which has a speed increase mechanism;

[0096] •倾斜的后壁以及/或是倾斜的前壁; [0096] • inclined rear wall and / or the inclination of the front wall;

[0097] •内部溢流溢流堰,用于具有分离的输入和输出部分的制作工序箱; [0097] • Internal overflow weir, having a separate input and output portion of the production process tank;

[0098] •具有流线型气流的被包围的输出; Output is surrounded [0098] • has a streamlined air flow;

[0099] •变流器,用于限制曝露在干燥化(例如IPA)蒸气的液体的表面的面积; [0099] • converter, for limiting the exposure of dried (e.g. IPA) vapor area of ​​the surface of the liquid;

[0100] •使用限流管的排放,用于稀释有机溶剂的浓度; [0100] • using exhaust restrictor tube for diluting the concentration of the organic solvent;

[0101] •干燥化混合气体的使用,其具有被降低浓度的有机溶剂,并被提高空气流率; [0101] • drying of the mixed gas having the reduced concentration of the organic solvent, and increasing the air flow rate;

[0102] •多个输出晶片支持器,用于由干燥器而来的至少部分的同时输出,并且以机械臂取拾;以及 [0102] a plurality of wafer holders • output for an output from the dryer while at least partially, and the robot arm to pick up take; and

[0103] •一个组件,具有旋干部分,以及可以在其内部使用Marangoni干燥方法的部分, 前述两个部分皆使用喷洒机构而不是使用晶片没入处理。 [0103] • a component having a rinsing section, and portions may be used Marangoni drying process in its interior, the two portions are used instead of the spray means not into the wafer processing.

[0104] 与传统的SRD比较,本发明所提出的装置11可以提供特别优越的表现,并在将斥水性或是亲水性晶片进行干燥工序时,都容许较大的制作工序误差。 When [0104] Compared to conventional based SRD, the proposed device 11 of the present invention may provide particularly advantageous performance and the drying step in a hydrophilic or water repellent wafer manufacturing process are more tolerant of errors. 此新的植基于〃 Marangoni"原理的干燥技术,以下仅为举例说明,可以只留下3奈米(neon-meter)厚的层,相对的,传统的SRD所会留下的是大约200奈米厚的层。通过将处理组件与输出站结合,本发明所提出的装置可以快速的干燥,以致对于各种不同的薄膜种类的晶片的干燥工序,都可以具有高产出。此旋干部分喷嘴,也有能力去除可能在刷洗以及传送到干燥组件时,被施于斥水性晶片表面的介面活性剂。 This new technology based on the dry plant 〃 Marangoni "principle, the following description is only an example, you may be left only 3 nm (neon-meter) thick layer of relatively conventional leave the SRD is about 200 Chennai m thick layer processing component by combining the output station, the apparatus proposed by the invention can be quickly dried, so that a thin film for various kinds of wafer drying step, may have a high output. rinsing section the nozzle also has the ability to interface the active agent may be removed during brushing and transferred to the drying module, the water repellent is applied to the wafer surface.

[0105] 应该注意的是全氮气只是举例说明,并且任何的惰性气体或是空气或是或是多种气体混合,都可以用来形成横越过输出部分的一个包围,并且接着制止干燥蒸气由此装置逸散出去。 [0105] It should be noted that the nitrogen blanket is only an example, and any air or an inert gas or gas mixture or more, it may be used to form a cross-over the surround output section, and then stop the drying vapor therefrom device from escaping. 也应该注意的是IPA蒸气也只是举例说明所用的,并且可以溶解于液体(被施于干燥部分中)的其他蒸气或气体,其用于产生可将干燥化的Marangoni气流,这些气体都可以使用在本发明中。 It should also be noted that the IPA vapor is only illustrative of the use, and may be dissolved in a liquid (to be applied to the drying section) other vapor or gas, which is used to produce the dried of Marangoni stream, these gases may be used in the present invention. 因此这样的蒸气或是气体在此将会被指认为干燥化气体。 Such gas or vapor so this will be alleged that the drying gas. 在此揭示时所使用的词句"捕获器"、“抓指"以及"托架",并非用以限定本发明的相应物件到特定的形状或结构,而是广泛地指称任何与在此所描述的捕获器、抓指以及托架,具有相同功能的结构的物件。 When the phrase is used herein disclosed "catcher", "grasping means" and the "cradle", corresponding to the object is not intended to limit the invention to a specific shape or structure, but broadly refer to any and described herein object trap structure grasping means and a bracket, having the same function.

[0106] 虽然本发明已参照当前的具体实施例来描述,但是本技术领域中的普通技术人员应当认识到,以上的实施例仅是用来说明本发明,在没有脱离本发明精神的情况下还可作出各种等效的变化或替换,因此,只要在本发明的实质精神范围内对上述实施例的变化、变型都将落在本申请的权利要求书的范围内。 [0106] While the present invention has been described with particular reference to the present embodiment, but the technical field of ordinary skill in the art will be appreciated that the above embodiments are merely to illustrate the invention, without departing from the spirit of the invention various equivalent changes may be made or alternatively, so that within the true spirit of the invention variations of the above embodiments, variations of the present application will fall within the claimed scope of the claims.

Claims (28)

1. 一种用于处理晶片的组件,该组件至少包含一处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分;一卸载端口,自该负载端口而水平移位设置,使得该晶片可以在该卸载端口处被举高而离开该处理部分;以及一可转动晶片的支持器,用于转动输入晶片由垂直的第一定向转到与该第一定向成倾斜状态的第二定向,当该晶片具有该第一定向时,是与该负载端口对齐,当该晶片具有该第二定向时,是与该卸载端口对齐。 1. An assembly for processing a wafer, the assembly comprising at least one processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section; an unloading port, from the load port and the horizontal shift bit is set, so that the wafer may be processed away from the portion at the unload port is held high; and a rotatable wafer holder, a wafer is rotated by the first directional input perpendicular to the first orientation a second inclined orientation state, when the wafer having the first orientation is aligned with the load port, when the wafer having the second orientation, is aligned with the unload port.
2.如权利要求1所述的组件,其特征在于所述可转动晶片的支持器使得该第一定向于第一方向倾斜,而且远离该卸载端口,并使得该第二定向于第二方向倾斜,而且是朝向该卸载端口。 2. The assembly according to claim 1, wherein the rotatable wafer support is inclined such that the first orientation to the first direction, and away from the unloading port, and so that the second orientation in a second direction inclination, and towards the unload port.
3.如权利要求1所述的组件,其特征在于所述的处理部分还包含一相邻于该卸载端口的倾斜的后壁。 The assembly as claimed in claim 1, wherein said processing section further comprises an inclined rear wall in one of the adjacent unload port.
4.如权利要求2所述的组件,其特征在于所述的处理部分还包含一相邻于该负载端口的倾斜的前壁,以及相邻于该卸载端口的倾斜的后壁。 4. The assembly according to claim 2, wherein said processing portion further comprises a front wall adjacent to the tilt of the load port, and a rear wall adjacent the unload port is inclined.
5. 一种用于处理晶片的组件,该组件至少包含处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分;一卸载端口,自该负载端口而水平移位设置,使得该晶片可以在该卸载端口处被举高而离开该处理部分;其中,该晶片具有垂直的第一定向和与该第一定向成倾斜状态的第二定向,当该晶片具有该第一定向时,与该负载端口对齐,当该晶片具有该第二定向时,与该卸载端口对齐;一外部溢流堰,其是位于沿着该处理部分外部表面的位置上;以及一分离壁,其是位于该负载端口和该卸载端口之间,以将该处理部分的上端区域分隔成第一区域以及第二区域,并且制止表面流体在该第一区域和该第二区域之间的流动。 An assembly for handling wafers, the assembly comprising at least a processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section; an unloading port, from the load port and the horizontal shift provided, so that the wafer may be processed away from the portion at the unload port is held high; wherein the wafer having a first orientation and the second orientation perpendicular to the first orientation to the tilted state, when the wafer having when the first orientation, when the wafer having the second orientation, alignment is aligned with the load port and the unload port; an external overflow weir, which is located along the outer surface portion of the process; and a separating wall, which is located between the load port and the unload port, to the processing region of the upper end portion into a first region and a second region, and the stop surface of the fluid in the first region and the second region of the flows between.
6.如权利要求5所述的组件,其特征在于所述的分离壁至少包含一内部溢流堰,该内部溢流堰用于接收由至少该第一区域以及该第二区域的其中一个所流出的溢流流体。 Wherein 6. The assembly according to claim 5, wherein the separating wall comprises at least one internal weir, the weir at least inside the first region and the second region is received by one of the fluid flows out of the overflow.
7.如权利要求5所述的组件,其特征在于所述的分离壁至少包含一内部溢流堰,该内部溢流堰用于接收由该第一区域以及该第二区域所流出的溢流流体。 7. The assembly according to claim 5, characterized in that said at least one internal separating wall comprising weir, for receiving the inner weir overflow from the first region and the second region of effluent fluid.
8. 一种用于处理晶片的组件,其至少包含:一处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分,其中,该晶片处于垂直的第一定向,并与该负载端口对齐;以及一喷洒机构,该喷洒机构可于处理期间没入处理部分的流体中,且其所在位置使得当晶片下降经过该负载端口,可喷洒流体到该晶片在水面下部分的表面。 An assembly for processing a wafer, comprising at least: a processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section, wherein the wafer is oriented perpendicular to the first and aligned with the load port; and a spray mechanism, the spraying mechanism during processing submerged in the process fluid portion, and its location such that when the wafer drops through the load port, the spray fluid to the underwater portion of the wafer s surface.
9.如权利要求8所述的组件,其特征在于还包含一处理期间位于处理部分中流体位准以上的一喷洒机构,且其所在位置使得当晶片下降经过该负载端口,可喷洒流体到该晶片位于水面上的晶片表面。 9. The assembly according to claim 8, characterized by further comprising flowing portion located in the processing position above a spray mechanism during a registration process, and its location such that when the wafer drops through the load port, the fluid can be sprayed into the wafer located on the wafer surface of the water.
10.如权利要求8所述的组件,其特征在于还包含:一卸载端口,自该负载端口而水平移位设置,使得该晶片可以在该卸载端口处被举高而离开该处理部分,其中,处于垂直的第一定向的该晶片具有与该第一定向成倾斜状态的第二定向,当该晶片具有该第二定向时,与该卸载端口对齐;以及一分离壁,其位于负载端口和卸载端口之间,以将该处理部分的上端区域分隔成相邻于该负载端口的第一区域,以及相邻于该卸载端口的第二区域,并且该分离壁可制止表面流体由该第一区域流动到该第二区域。 10. The assembly according to claim 8, characterized by further comprising: an unloading port, from the load port disposed horizontally displaced, such that the wafer may be processed away from the portion at the unload port is held high, wherein the first wafer is oriented perpendicular to the first orientation having a second inclined orientation state, when the wafer having the second orientation, aligned with the unload port; and a separating wall, which is located in the load between the port and the unload port, to the processing region of the upper end portion of the partition adjacent to the first region of the load port, and a second region adjacent to the unloading port, and the separating wall surface of the fluid can be made to stop the a first region of the flow to the second region.
11.如权利要求10所述的组件,其特征在于所述的第二区域至少包含一喷洒机构,该喷洒机构是用于当一晶片在该卸载端口处被举高而离开该处理部分时,对该晶片喷洒以干燥气体。 11. The assembly according to claim 10, wherein said second region comprises at least one spray means, the spray mechanism is used when a wafer is held high at the unload port away from the processing section, spray drying gas to the wafer.
12.如权利要求11所述的组件,其特征在于还包含一气流变流装置,该气流变流装置是耦合到该干燥气体喷洒机构上,并且是被用来限制该处理部分中暴露于该干燥气体下的流体的体积。 12. The assembly according to claim 11, characterized in that the flow means further comprises a rheology stretch, the flow deflector is coupled to the gas spray drying mechanism and is used to limit the exposure to the processing section the volume of fluid in a dry gas.
13. 一种组件至少包含:一处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分;一卸载端口,自该负载端口而水平位移设置,使得一晶片可以在该卸载端口处被举高而离开该处理部分,其中,该晶片具有垂直的第一定向和与该第一定向成倾斜状态的第二定向,当该晶片具有该第一定向时,与该负载端口对齐,当该晶片具有该第二定向时,与该卸载端口对齐;以及一输出部分,该输出部分包含:第一晶片接收器,用于接收经过该卸载端口而升高的该晶片;以及一捕获器,该捕获器被耦合到该第一晶片接收器,并被用于接触从该卸载端口而升高的晶片,并且也随着被动地升高。 13. An assembly comprising at least: a processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section; an unloading port, from the load port disposed horizontally displaced, such that a wafer can be the unloading port is lifted away from the high processing section, wherein the wafer having a first orientation and the second orientation perpendicular to the first orientation to the tilted state, when the wafer having the first orientation, , when the wafer having the second orientation, aligned with the load port and the unload port is aligned; and an output portion, the output portion comprises: a first wafer receiver adapted for receiving a raised through the unload port of the wafer; and a trap, the trap is coupled to the first wafer receiver and for contacting the unload port is raised from the wafer, and also increases with passively.
14.如权利要求13所述的组件,其特征在于所述的捕获器是被用来固定一晶片的上端区域。 14. The assembly according to claim 13, characterized in that said catcher is fixed to the upper end region of a wafer.
15.如权利要求14所述的一种组件,其特征在于还包含一耦合到晶片接收器的抓指, 该抓指可于晶片通过位置和晶片固定位置之间做选择性的移动,其中所述的晶片固定位置是用于接触并且固定一晶片较低的部分,使得当抓指位于该晶片固定位置时,该晶片可被固定于捕获器和抓指之间。 15. An assembly according to claim 14, wherein the wafer further comprises a receiver coupled to the grip means, the grip means can be made by selectively between a fixed position and the position of the wafer to the wafer movement, wherein said wafer is a fixed position for contacting and fixing the lower part of a wafer, such that when the grip means is located in a fixed position of the wafer, the wafer may be secured to trap and grip between the fingers.
16.如权利要求13所述的组件,其特征在于该处理部分还包括一相邻于卸载端口的一倾斜的后壁。 16. The assembly according to claim 13, wherein the processing section further comprises a sloping rear wall of an adjacent to the unloading port.
17.如权利要求16所述的组件,其特征在于该处理部分还包括倾斜的导轨,用于引导以倾斜定向而通过输出部分所输出的晶片。 17. The assembly according to claim 16, wherein the processing section further comprises an inclined guide rail, for guiding through the inclined orientation of the wafer output by the output section.
18.如权利要求16所述的组件,其特征在于还包括:一可转动晶片的支持器,用于使一输入的晶片从其与该负载端口对齐的第一定向转到其与该卸载端口对齐的第二定向。 18. The assembly according to claim 16, characterized by further comprising: a rotatable wafer holder, a wafer for an input from the first orientation is aligned with the load port to which the unloading port of the second directional alignment.
19.如权利要求18所述的组件,其特征在于该可转动晶片的支持器配置成该使第一定向是在一离开该卸载端口的第一方向上倾斜,以及该第二定向是在一朝向该卸载端口的第二方向上倾斜。 19. The assembly according to claim 18, wherein the rotatable wafer support is configured to cause the first orientation is a leaving unload port of the first tilt direction, and in the second orientation an unload port towards the second inclined.
20.如权利要求18所述的组件,其特征在于该处理部分还包括一相邻于该负载端口的一倾斜的前壁和一相邻于该卸载端口的倾斜的后壁。 20. The assembly according to claim 18, wherein the processing section further comprises a load port adjacent the front wall and an inclined rear wall in one of the adjacent inclined unloading port.
21.如权利要求13所述的组件,其特征在于还包括:一分离壁,其位于该负载端口和该卸载端口之间,以将该处理部分的上部区域分成一第一区域和一第二区域,并阻止表面流体在该第一区域和第二区域之间流动。 21. The assembly according to claim 13, characterized by further comprising: a separating wall, which is located between the load port and the unload port, to the upper region of the processing portion into a first region and a second area, and prevent fluid flow between the surface of the first region and the second region.
22.如权利要求21所述的组件,其特征在于该分离壁包括一个内部溢流堰,适合于接收由至少该第一区域和该第二区域的一溢出的流体。 22. The assembly according to claim 21, characterized in that the separation wall comprises an internal overflow weir adapted to receive from the first region and the second region of the fluid is at least one overflow.
23.如权利要求21所述的组件,其特征在于该分离壁包括一个内部溢流堰,适合于接收由该第一区域和第二区域溢出的流体。 23. The assembly according to claim 21, characterized in that the separation wall comprises an internal overflow weir adapted to receive fluid overflowed from the first region and the second region.
24. 一种用于清洁及干燥一晶片的组件,其至少包含: 一处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分;一卸载端口,自该负载端口而水平移位设置,使得该晶片可以在该卸载端口处被举高而离开该处理部分,其中,该晶片具有垂直的第一定向和与该第一定向成倾斜状态的第二定向,当该晶片具有该第一定向时,与该负载端口对齐,当该晶片具有该第二定向时,与该卸载端口对齐;以及一输出部分,该输出部分包含:一第一晶片接收器,是用于接收经过该卸载端口而升高的该晶片;以及一围体,该围体环绕该第一晶片接收器,该围体包含:一第一开口,该第一开口用于使得晶片可以由该处理部分举高,经卸载端口而到该第一晶片接收器;一第二开口,该第二开口用于使得晶片可以被一晶片握持器由该第一晶片 24. A cleaning and drying a wafer assembly, comprising at least: a processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section; an unloading port, from the load port displaced horizontally disposed, such that the wafer may be lifted away from the high processing section in the unloading port, wherein the first wafer having orientation perpendicular to the first orientation and a second orientation inclined state, when the wafer has the first orientation, aligned with the load port, when the wafer having the second orientation, aligned with the unload port; and an output section, the output section comprising: a first wafer receiver for receiving the wafer raised through the unload port; and a surrounding body, the enclosure member surrounding the first wafer receiver enclosure which comprises: a first opening, the first opening so that the wafer can be used for high by the processing portion, through the unload port of the first wafer and to the receiver; a second opening, the second opening such that the wafer may be a wafer is gripped by the first wafer 收器中抽取出来;以及多个外加开口,用于允许在该围体中建立起空气的层流。 Retractor extracted; and a plurality of external openings for allowing air to establish a laminar flow in the enclosure body.
25. 一种组件,其至少包含: 一处理部分,该处理部分包含:一负载端口,晶片经过负载端口而降低进入该处理部分;一卸载端口,自该负载端口而水平移位设置,使得该晶片可以在该卸载端口处被举高而离开该处理部分,其中,该晶片具有垂直的第一定向和与该第一定向成倾斜状态的第二定向,当该晶片具有该第一定向时,与该负载端口对齐,当该晶片具有该第二定向时,与该卸载端口对齐;以及一输出部分,该输出部分包含:第一晶片接收器,用于接收经过该卸载端口而升高的该晶片;以及第二晶片接收器,用于接收经过该卸载端口而升高的该晶片; 其中第一晶片接收器以及第二晶片接收器是适于在第一位置及第二位置之间移动,在该第一位置处,该第一晶片接收器经定位以接收经过该卸载端口而举高的晶片,在该第二位置处,该第二晶片接 25. An assembly comprising at least: a processing section, the processing section comprises: a load port, the wafer is lowered through the load port enters the processing section; an unloading port, from the load port disposed horizontally displaced, such that the the wafer may be processed away from the unloading port portion is held high, wherein the wafer having a first orientation and the second orientation perpendicular to the first orientation to the tilted state, when the wafer having the first constant , when the port is aligned with the load, when the wafer having the second orientation, aligned with the unload port; and an output portion, the output portion comprises: a first wafer receiver adapted for receiving the unload port and the l the high wafer; wafer and a second receiver for receiving the wafer raised through the unload port; wherein a first wafer and second wafer receivers are adapted to the receiver in a first position and a second position moving between a first position at which the first wafer receiver is positioned to receive and unload port through which a wafer held high, at the second position, the second wafer bonding 器经定位以接收经过该卸载端口而举高的晶片。 It is positioned to receive and unload port through which a wafer held high.
26.如权利要求25所述的组件,其特征在于还包含一平台,其中该第一晶片接收器以及该第二晶片接收器皆被耦合到该平台,该平台是被用来水平地移动,以将该第一晶片接收器以及该第二晶片接收器在该第一位置与该第二位置之间移动。 26. The assembly according to claim 25, characterized by further comprising a platform, wherein the first wafer and the second wafer receivers are receivers is coupled to the platform, which is used to move horizontally, the first wafer to the second wafer receiver, and the receiver is movable between the first position and the first position.
27.如权利要求25所述的组件,其特征在于还包含环绕着该第一晶片接收器以及该第二晶片接收器的围体,该围体包含:一第一开口,该第一开口用于使得晶片可以由该处理部分举高,经卸载端口而到该第一晶片接收器和第二晶片接收器的其中之一;一第二开口,该第二开口用于使得晶片可以被一晶片握持器由第一晶片接收器和第二晶片接收器的其中之一中抽取出来;以及多个外加开口,用于允许在该围体中,建立起空气的层流。 27. The assembly according to claim 25, characterized by further comprising surrounding the enclosure of the receiver, the first wafer and the second wafer receiver, the enclosure comprises: a first opening, the first opening with so that the wafer to be held high by the processing portion, through the unload port and one of the first wafer to a second wafer receiver and the receiver; a second opening, the second opening such that the wafer may be a wafer It is extracted by a gripping one of the first wafer and second wafer receivers of the receiver; and a plurality of additional openings in the enclosure for allowing the body to establish a laminar flow of air.
28.如权利要求1所述的组件,其特征在于所述的处理部分还包含: 一第一对喷洒机构,其紧邻于负载端口,并且能供应流体到该晶片的正面和背面,以使得该流体沿着该晶片的正面和背面的表面往下流,因此得以将该晶片的正面和背面的表面维持在潮湿的状态;以及一第二对喷洒机构,其紧邻于卸载端口,并且能供应流体到该晶片的正面和背面,以使得该流体分别在该晶片的正面和背面表面上形成弯液面;以及一第三对喷洒机构,其位于该第二对喷洒机构上方,并且能供应干燥蒸气到形成于该晶片正面和背面的该弯液面上。 28. The assembly as recited in claim 1, wherein said processing section further comprises: a first pair of spray means, proximate to the load port, and can supply fluid to the front and back surfaces of the wafer, so that the fluid flowing down along the front and back surfaces of the wafer, and therefore to the front side and the back surface of the wafer is maintained in the wet state; and a pair of second spray means, proximate the unloading port, and the fluid can be supplied to the front and back surfaces of the wafer, are formed so that the fluid meniscus on the front and back surface of the wafer; and a third pair of spray means located above the second pair of the spray means, and able to supply drying vapor to the the meniscus formed on the wafer front and back surfaces.
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