CN101487090A - Copper linking wire and production method thereof - Google Patents
Copper linking wire and production method thereof Download PDFInfo
- Publication number
- CN101487090A CN101487090A CNA200810049097XA CN200810049097A CN101487090A CN 101487090 A CN101487090 A CN 101487090A CN A200810049097X A CNA200810049097X A CN A200810049097XA CN 200810049097 A CN200810049097 A CN 200810049097A CN 101487090 A CN101487090 A CN 101487090A
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- bonding wire
- copper bonding
- copper
- blank
- purity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
- H01L2224/85075—Composition of the atmosphere being inert
Abstract
The invention discloses a copper bonding wire and the weight percentages of components in the copper bonding wire are as follows: La accounts for 0.0008 to 0.002 wt percent, Ce accounts for 0.001 to 0.003 wt percent, Ca accounts for 0.002 to 0.004 wt percent, and Cu accounts for 99.99 to 99.995 percent. The copper bonding wire has low trajectory, low hardness and good oxidation resistance and avoids the oxidation of the copper bonding wire at normal temperature, so the copper wire can be stored for a long term at normal temperature, and the method can also meet the demand of high performance, multifunction, miniaturization and portable development of electronic packaging.
Description
Technical field
The present invention belongs to technical field of semiconductor, and what relate generally to is a kind of low radian, soft and the copper bonding wire with good oxidation resistance energy.
Background technology
Copper bonding wire compare with spun gold, aluminium wire have good mechanical property, electric property, thermal property and low intermetallic compound increase, improve chip frequency and reliability to a great extent, adapted to the development that low cost, thin space, high leading-out end components and parts encapsulate.The wafer aluminum metallization makes for the novel encapsulated design of high speed device to the transformation of copper metallization, selects short copper wire bonding and spacing will become the strong rival of upside-down mounting weldprocedure on encapsulation market less than the brazing district of 50 μ m.And after the improvement of adopting new technology, make the copper wire bonding more firm, more stable, especially in the IC packaging process of large batch of high leading-out end, thin space, little welding zone, become the best bonding material that substitutes spun gold than gold wire bonding.In addition, the trend of Electronic Packaging high-performance, multi-functional, miniaturization, portable development, not only to the performance requriements of unicircuit in continuous lifting, and Electronic Packaging density had higher requirement, comprising: the number of pins of encapsulation is more and more; The cloth string pitch is more and more littler; Package thickness is more and more thinner; Package shared area ratio on substrate is increasing; These all will rely on low radian, high performance key to contain silk and realize.But,, in the large-scale integrated circuit encapsulation, be easy to cause substrate damage because its hardness is higher for copper bonding wire.Copper bonding wire is with respect to bonding gold wire, and its chemical property is active in easily oxidation, thereby has reduced the reliability of electronic devices and components.
Summary of the invention
The objective of the invention is to overcome above prior art deficiency, a kind of copper bonding wire with low radian, soft and good oxidation resistance is provided.
The objective of the invention is to be achieved through the following technical solutions:
Each composition weight percent is that La is 0.0008～0.002wt% in the copper bonding wire material, and Ce is 0.001～0.003wt%, and Ca is 0.002～0.004wt%, and Cu is 99.99～99.995%.
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 80～200m/min;
Adopting purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process protects copper bonding wire and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 0.6～1.2L/min, and the flow of rare gas element is 1.0～1.6L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 0.05%～10% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.002～0.012mm, and adopts 50～150 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
The present invention has the following advantages:
Copper bonding wire of the present invention has low radian, soft and good oxidation resistance, avoided copper bonding wire oxidation at normal temperatures, make the copper wire at normal temperatures can prolonged preservation, can adapt to the demand of Electronic Packaging high-performance, multi-functional, miniaturization, portable development.
Embodiment
Embodiment 1: each composition weight percent is that La is 0.0008% in the copper bonding wire material, and Ce is 0.001%, and Ca is 0.002%, and Cu is 99.995%.
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 80m/min;
Adopt purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process and copper bonding wire is protected and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 0.6L/min, and the flow of rare gas element is 1.0L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 0.05% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.002mm, and adopts 50 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Embodiment 2: each composition weight percent is that La is 0.001% in the copper bonding wire material, and Ce is 0.0015%, and Ca is 0.0025%, and Cu is 99.994%;
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 100m/min;
Adopting purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process protects copper bonding wire and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 0.75L/min, and the flow of rare gas element is 1.15L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 1% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.005mm, and adopts 80 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Embodiment 3: each composition weight percent is that La is 0.0012% in the copper bonding wire material, and Ce is 0.0018%, and Ca is 0.003%, and Cu is 99.992%.
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 120m/min;
Adopting purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process protects copper bonding wire and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 0.85L/min, and the flow of rare gas element is 1.35L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 1% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.008mm, and adopts 120 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Embodiment 4: each composition weight percent is that La is 0.0018% in the copper bonding wire material, and Ce is 0.002%, and Ca is 0.003%, and Cu is 99.992%.
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 150m/min;
Adopting purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process protects copper bonding wire and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 1.0L/min, and the flow of rare gas element is 1.45L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 1% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.01mm, and adopts 130 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Embodiment 5: each composition weight percent is that La is 0.002% in the copper bonding wire material, and Ce is 0.003%, and Ca is 0.004%, and Cu is 99.99%.
Preparation copper bonding wire method may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 200m/min;
Adopt purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process and copper bonding wire is protected and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 1.2L/min, and the flow of rare gas element is 1.6L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 1% antioxidant is evenly coated in the copper bonding wire surface, and coat-thickness is 0.012mm, and adopts 150 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Claims (2)
1, a kind of copper bonding wire is characterized in that: each composition weight percent is that La is 0.0008～0.002wt% in the copper bonding wire material, and Ce is 0.001～0.003wt%, and Ca is 0.002～0.004wt%, and Cu is 99.99～99.995%.
2, a kind of preparation copper bonding wire method is characterized in that: may further comprise the steps:
A, the preparation of copper bonding wire blank adopt directional solidification process to prepare the copper bonding wire blank;
B, the blank for preparing is drawn, its draw rate is 80～200m/min;
Adopting purity to add purity greater than 99.999% hydrogen in c, the copper bonding wire heat treatment process protects copper bonding wire and the lightization processing greater than 99.999% rare gas element, wherein the flow of hydrogen is 0.6～1.2L/min, and the flow of rare gas element is 1.0～1.6L/min;
The surface oxidation-resistant of d, copper bonding wire is handled, and adopting concentration is that 0.05%～10% benzo three nitrogen Cuo are evenly coated in the copper bonding wire surface, and coat-thickness is 0.002～0.012mm, and adopts 50～150 ℃ of hot blasts that it is dried up;
E, copper bonding wire packing adopt nitrogen-filled packaging, and wherein nitrogen gas purity is 99.999%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810049097XA CN101487090A (en) | 2008-01-17 | 2008-01-17 | Copper linking wire and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA200810049097XA CN101487090A (en) | 2008-01-17 | 2008-01-17 | Copper linking wire and production method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN101487090A true CN101487090A (en) | 2009-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200810049097XA Pending CN101487090A (en) | 2008-01-17 | 2008-01-17 | Copper linking wire and production method thereof |
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| Country | Link |
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| CN (1) | CN101487090A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102332439A (en) * | 2011-10-19 | 2012-01-25 | 浙江佳博科技股份有限公司 | Copper-based bonding wire with anti-oxidation coating and processing technology thereof |
| CN102361026A (en) * | 2011-10-19 | 2012-02-22 | 广东佳博电子科技有限公司 | Copper-based bonding wire with anti-oxidation function |
| CN102399987A (en) * | 2010-09-15 | 2012-04-04 | 涂嘉晋 | Metal oxide deoxidation technology |
| CN102560184A (en) * | 2012-01-17 | 2012-07-11 | 宁波敖达金属新材料有限公司 | Lead-free, easily-cut and high-conductivity calcium-copper material |
| CN102687259A (en) * | 2010-02-03 | 2012-09-19 | 新日铁高新材料株式会社 | Copper bonding wire for semiconductor,and bonding structure of the copper bonding wire |
| CN105803252A (en) * | 2016-05-06 | 2016-07-27 | 河南优克电子材料有限公司 | Manufacturing method for high-strength and high-conductivity copper alloy wire used for electronic cable |
-
2008
- 2008-01-17 CN CNA200810049097XA patent/CN101487090A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102687259A (en) * | 2010-02-03 | 2012-09-19 | 新日铁高新材料株式会社 | Copper bonding wire for semiconductor,and bonding structure of the copper bonding wire |
| CN102687259B (en) * | 2010-02-03 | 2015-02-25 | 新日铁住金高新材料株式会社 | Copper bonding wire for semiconductor,and bonding structure of the copper bonding wire |
| CN102399987A (en) * | 2010-09-15 | 2012-04-04 | 涂嘉晋 | Metal oxide deoxidation technology |
| CN102332439A (en) * | 2011-10-19 | 2012-01-25 | 浙江佳博科技股份有限公司 | Copper-based bonding wire with anti-oxidation coating and processing technology thereof |
| CN102361026A (en) * | 2011-10-19 | 2012-02-22 | 广东佳博电子科技有限公司 | Copper-based bonding wire with anti-oxidation function |
| CN102332439B (en) * | 2011-10-19 | 2013-08-21 | 浙江佳博科技股份有限公司 | Processing technology of copper-based bonding wire with anti-oxidation coating |
| CN102560184A (en) * | 2012-01-17 | 2012-07-11 | 宁波敖达金属新材料有限公司 | Lead-free, easily-cut and high-conductivity calcium-copper material |
| CN102560184B (en) * | 2012-01-17 | 2013-09-18 | 宁波敖达金属新材料有限公司 | Lead-free, easily-cut and high-conductivity calcium-copper material |
| CN105803252A (en) * | 2016-05-06 | 2016-07-27 | 河南优克电子材料有限公司 | Manufacturing method for high-strength and high-conductivity copper alloy wire used for electronic cable |
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Open date: 20090722 |