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电子器件、半导体器件及其制造方法

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CN101477990A
CN101477990A CN 200810186809 CN200810186809A CN101477990A CN 101477990 A CN101477990 A CN 101477990A CN 200810186809 CN200810186809 CN 200810186809 CN 200810186809 A CN200810186809 A CN 200810186809A CN 101477990 A CN101477990 A CN 101477990A
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前川慎志
桑原秀明
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株式会社半导体能源研究所
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651Silicon transistors
    • H01L29/7866Non-monocrystalline silicon transistors
    • H01L29/78672Polycrystalline or microcrystalline silicon transistor
    • H01L29/78678Polycrystalline or microcrystalline silicon transistor with inverted-type structure, e.g. with bottom gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41733Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45Ohmic electrodes
    • H01L29/456Ohmic electrodes on silicon
    • H01L29/458Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/6675Amorphous silicon or polysilicon transistors
    • H01L29/66765Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

本发明提供了一种利用适合于批量生产制造大衬底的液滴喷射法的制造工艺。通过液滴喷射法选择性地喷射导电膜的光敏材料溶液,选择性地暴露于激光光线,并且显影或蚀刻,由此只允许暴露于激光光线的区域留下,以及实现具有比由喷射形成的图案本身更微小图案的源极布线和漏极布线。源极布线和漏极布线的一个特征是,源极布线和漏极布线穿过岛状半导体层并且与它交叠。

Description

电子器件、半科器件及其制粉法

本申请是基于申请日为2006年1月28日、申请号为200610059905. 1的申请所提交的分案申请。

技术领域

本发明涉及具有由薄膜晶体管(在下文中,还称为TFT)构成的电路的半导体器件和该半导体器件的制造方法。例如,本发明涉及电子器件,其一部分装配有以液晶显示面板为代表的电光器件或具有有机发光元件的发光显示器件。

注意到,在该说明书中的半导体器件表示可以利用半导体特性起作用的常用器件,且在该说明书中的半导体器件范畴包括所有类型的器件,如电光器件、半导体电路和电子器件。背景技术

近年来,使用在具有绝缘表面的村底上方形成的薄半导体膜(厚度:大约几至几百mn)形成薄膜晶体管(TFT )的技术已引起注意。薄膜晶体管已广泛地用于电子器件如IC或电光器件中,特别地,已积极地将这种薄膜晶体管开发用作图像显示器件的开关元件。

作为典型的图像显示器件的有源矩阵型显示器件的应用范围广泛,且随着屏幕尺寸增加,更加需要高分辨率、高孔径比或高可靠性。

为了实现可以以高速度运行的高性能的半导体器件,将更需要具有低电阻布线材料的结构。

参考文献1 (日本专利申请/>开No. 2000-188251 )描述了一种其中利用可以从喷嘴喷射抗蚀剂溶液以具有薄线性形状的器件在半导体晶片上方形成膜的技术。发明内容

在这种情形下,利用旋涂的成膜方法被用于许多制造工艺中。当未来进一步增加衬底尺寸时,由于用于旋转大衬底的机械装置巨大或材料溶液的损耗或液体的浪费增加,所以利用旋涂的成膜方法 在批量生产方面具有缺点。在旋转矩形村底以使其被涂上材料溶液

的情况下;涂布的膜易于不均匀,即,涂布的膜易于具有以其旋转 轴为中心的圓点。本发明提供了利用适合于批量生产制造大村底的 液滴喷射法的制造工艺。

本发明提供了一种利用由液滴喷射法形成的源极布线(还称为 源极电极)或漏极布线(还称为漏极电极)的大屏幕显示器,和该 大屏幕显示器的制造方法。

根据本发明,通过液滴喷射法选择性地喷射导电膜的光敏材料 溶液,选择性地暴露于激光光线,并且显影或蚀刻,由此只允许暴 露于激光光线的区域留下,以及实现比由喷射形成的图案本身更微 小的布线图案。可选地,通过印刷法,如印刷技术中的纳米选择性 地形成导电膜的光敏材料,选择性地暴露于激光光线,并且显影或 蚀刻,由此只允许暴露于激光光线的区域留下,以及实现比由喷射 形成的图案本身更微小的布线图案。

根据本发明,可以在用于形成导电图案(如源极布线或漏极布 线)的工艺中缩短诸如曝光步骤或显影步骤的工艺,还可以减少材 料的使用量,由此可以大大地减少成本。因此,本发明可以处理大 尺寸的村底。

导电膜的材料溶液包括诸如Ag、 Au、 Cu、 Ni、 Al、 Pt、 W或Mo 的金属或其合金、包含有机聚合物树脂的光敏树脂、光聚合引发剂、 光聚合单体、溶剂等。作为有机聚合物树脂,可以使用酚醛清漆树 脂、丙烯酸共聚物、甲基丙酸烯共聚物、纤维素衍生物、环化橡胶 树脂等。

如有必要,可将添加剂如敏化剂、敏化助剂、聚合抑制剂、增 塑剂、增稠剂、氧化抑制剂、分散抑制剂或沉淀抑制剂加入到导电 膜的材料溶液中。

可以将光敏材料广泛地分成负型和正型。在使用负型光敏材料 的情况下,由于暴露的部分发生化学反应,所以只有由显影剂化学 反应的部分留下变成图案。在使用正型光敏材料的情况下,暴露的 部分发生化学反应,且由显影剂化学反应的部分被溶解而只留下未被暴露的部分,然后形成图案。在本发明中,在导电膜的材料溶液 中包括负光敏材料。作为负光敏材料,给出了包括在分子中的含有 一种或多种功能团如不饱和基团的单体、低聚物、聚合物中至少一

种类型的材料;光敏化合物,如芳香重氮化合物、芳香氮化物化合 物或有机卣化物化合物;重氮基树脂;等。

而且,由于基于激光照射的精确度确定布线的宽度,所以不管 滴入液滴的量或粘性或喷嘴直径都可以获得所希望的布线宽度。一 般,由从喷嘴喷射的材料溶液和衬底之间的接触角来改变布线宽度。 例如,从典型的喷墨装置的一个具有50jnmx 50jum直径的喷嘴喷射 的液滴量是30至200pl,且获得的布线宽度是60至300 ym。通过 根据本发明进行激光曝光,可以获得具有窄宽度的布线(例如,0.5 至10pm的电极宽度)。从具有比典型的喷嘴直径更细直径的喷嘴 喷射的材料溶液的量是0. 1至40pl,且获得的布线宽度是5至100 ju m。

在通过液滴喷射法形成布线图案的情况下,可从喷嘴断续地一 滴一滴地喷射点状的导电膜的材料溶液,或可连续地喷射导电膜的 材料溶液以便液滴连成线状。在本发明中,可通过以点状或线状喷 射导电膜的材料溶液适当地形成布线图案。在形成具有相对宽的宽 度的布线图案的情况下,通过从喷嘴连续地喷射材料溶液形成布线 图案,以便材料溶液连成线状会带来更好的产量。

在通过液滴喷射法形成布线图案之前,优选在衬底的整个表面 或所选的面积上方预先形成用于提高粘性的基层。可选地,可对基 底进行预处理。作为基层的形成,可进行处理,使得通过喷洒法或 溅射法在整个表面上方滴加光催化剂材料(钛氧化物(TiOx)、钬酸 锶(SrTi03)、硒化镉(CdSe)、钽酸钾(KTa03)、硫化镉(CdS)、 氧化锆(ZK)2)、氧化铌(Nb2Os)、氧化锌(ZnO)、氧化铁(FezOj 、

氧化钨(wo3))。可选地,可进行处理,使得通过喷墨法或溶胶-

凝胶法选择性地形成有机材料(聚酰亚胺、丙烯酸或利用具有由硅 (Si)氧(0)键形成的架构且包括氢、氟化物、烷基基团和芳香烃 中的至少一种作为取代基的材料涂布的绝缘膜)。

光催化剂物质指的是一种具有通过用紫外区中的光(400 mn或更小的波长,优选,380 nm或更小)照射产生光催化活性的光催化 剂功能的物质。如果通过以喷墨法为代表的液滴喷射法将混合到溶 剂中的导体喷射到光催化剂物质上,可以实现微小的绘图。

在向TiOx发射光之前,TiOx具有亲脂性质但没有亲水性质,即, TiOx具有斥水性质(water-shedding property)。 然而,通过光照 射,TiOx产生光催化活性,且具有亲水性质而失去亲脂性质。而且, 根据光照射时间,TiOx能够同时具有亲脂性质和亲水性质。

通过将过渡金属(Pd、 Pt、 Cr、 Ni、 V、 Mn、 Fe、 Ce、 Mo或W) 掺杂到光催化剂物质中,可以提高光催化活性,或者用可见光区域 中的光(400至800nm的波长)可以产生光催化活性。由于根据光 催化剂物质可以确定光波长,所以光照射意味着发出具有可以产生 光催化剂物质的光催化活性的波长的光。

亲水性质意味着较容易被水润湿的性质。超亲水性质指的是具 有30匸或更小、尤其是5t:或更小的接触角的状态。另一方面,斥 水性质指的是具有90X:或更大接触角难以被水润湿的性质。同样, 亲脂性质指的是较容易,皮油润湿的性质,而斥油性质(o i 1 -shedd ing property)指的是难以被油润湿的性质。而且,接触角指的是由表 面和在滴加的液滴边缘处的液滴切线形成的角。

在导电膜的材料溶液具有流动性质或流动性质在烘焙时增加的 情况下,当通过液滴喷射法利用导电膜的材料溶液形成布线时,存 在由于液滴的滴入而引起的难以形成微小图案的危险。在布线之间 的间隔窄的情况下,存在图案彼此接触的危险。根据本发明,即使 由于液滴的滴入图案变宽,通过将光敏材料混合到导电膜的材料溶 液中、精确地暴露它于激光光线并且使它显影,也可以获得微小的 图案。

在该说明书中公开的本发明的结构是一种半导体器件,包括: 形成于具有绝缘表面的村底上方的栅电极;覆盖栅电极的栅绝缘膜; 第一岛状半导体层,包括形成于栅绝缘膜上方的沟道;第二岛状半 导体层,包括形成于第一岛状半导体层上方的赋予n型或p型导电 性的杂质元素;形成于第二岛状半导体层上方的漏极布线和源极布 线,其中源极布线与第一岛状半导体层交叉并且交叠,以及其中与源极布线和漏极布线之间的区域交叠的第一岛状半导体层是沟道,

如图2B所示,本发明的另一结构是一种半导体器件,包括:形 成于具有绝缘表面的村底上方的栅电极;覆盖栅电极的栅绝缘膜; 第一岛状半导体层,包括形成于栅绝缘膜上方的沟道;第二岛状半 导体层,包括形成于第一岛状半导体层上方的赋予n型或p型导电 性的杂质元素;形成于第二岛状半导体层上方的漏极布线和源极布 线,其中第一岛状半导体层的一端和另一端之间的长度L是沟道长 度L1、与漏极布线交叠的区域的长度、与漏极布线交叠的区域和第 一半导体膜另一端之间的长度L2、与源极布线交叠的区域的长度、 以及与源极布线交叠的区域和半导体膜另 一端之间的长度L3的和。

在上述结构的每一个中,其中源极布线与具有第二半导体层介 于其间的第一半导体层交叠的区域的长度等于源极布线的宽度。而 且,由于通过激光扫描确定源极布线的宽度,且激光光线以穿过第 一半导体层的方式进行扫描,所以源极布线与第一半导体层交叠的 区域的长度等于源极布线的宽度。

在上述结构的每一个中,漏极布线与第一半导体层交叠的区域 的长度等于漏极布线的宽度。

在利用液滴喷射法的导电层等的图案形成方法中,如下形成图 案。喷射被处理成微粒的图案形成材料,并且焊接或熔化以通过烘 焙而固化图案形成材料而接合。于是,尽管通过溅射法等形成的图 案一般显示为柱状结构,但通过上述方法形成的图案一般显示为具 有多个晶粒界面的多晶态。

本发明的一个特征是,通过液滴喷射法形成的导电层(源极布 线或漏极布线)是含树脂的材料。该树脂是包含于包括导电材料的 液滴中的用作胶合剂等的材料,并且混合该树脂、溶剂和金属纳米 颗粒,以便能够通过喷墨法喷射液滴。

在上述结构中,提供了覆盖第一半导体层和漏极布线、源极布 线的绝缘膜。可以通过该绝缘膜保护第一半导体层。

在上述结构的每一个中,漏极布线具有弯曲部分,且在该弯曲 部分中形成与上电极的接触。由于通过扫描激光光线形成漏极布线, 所以优选是一个冲程图案,且选择性地使其中形成了接触孔的部分中的导电图案弯曲。另外,恰在形成接触孔之后,暴露出螺旋形的 导电膜图案和未与导电膜交叠的绝缘膜表面。通过在接触部分中使

导电图案弯曲(成z字形),形成凹状和凸状,且可以增强与待形

成于其上的上电极的粘接性。

用于实现上述结构的本发明的结构是一种半导体器件的制造方

法,包括步骤:在具有绝缘表面的衬底上方形成栅电极;形成覆盖 栅电极的栅绝缘膜;在栅绝缘膜上方形成第一半导体层,以及在第 一半导体层上方形成第二半导体层,第二半导体层包括赋予n型或

p型导电性的杂质元素;通过液滴喷射法或印刷法在第二岛状半导 体层上方形成第一图案;用激光光线照射具有比第一图案宽度更小 的区域;移除未被激光光线照射的第一图案的区域,以形成源极布 线和漏极布线;利用漏极布线和源极布线作为掩模蚀刻半导体层的 一部分表面,以分离由第一半导体层形成的沟道,并将笫二半导体 层分离成两个部分以夹住该沟道。

在有关制造方法的结构中,进行激光照射以便激光光线穿过第 一半导体层。

可以将本发明应用到沟道-蚀刻型TFT和沟道-停止型TFT (反 转交叉的TFT)上。另外,可将本发明应用到具有多沟道形成区的 多槺极TFT,例如双栅极TFT,而不局限于单栅极型TFT。

在该说明书中,可以使用主要含硅的半导体膜、主要含有机材 料的半导体膜、或主要含金属氧化物的半导体膜,作为用作TFT有

源层的半导体层。作为主要含硅的半导体膜,可以使用非晶半导体 膜、具有结晶结构的半导体膜、具有非晶结构的化合物半导体膜等, 具体地,可以使用非晶硅、微晶硅、多晶硅等。作为主要含有机树 脂的半导体膜,可以使用主要含包括相同数量碳或同素异形体碳(除 金刚石外)和另一元素的物质的半导体膜。具体地,给出了并五苯、 并四苯、噻吩低聚物衍生物、苯撑衍生物、酞菁化合物、聚乙炔衍 生物、聚噻吩衍生物、花青染料等。而且,作为主要含金属氧化物 的半导体膜,可以使用氧化锌(Zn0 )、锌镓和铟的氧化物 (In-Gz-Zn-O)等。

通过本发明,通过利用由液滴喷射法形成的布线可以获得底栅

10型TFT的小型化。具体地,基于激光光线的条件(如扫描法或点尺 寸),可以调节利用激光光线形成的源极布线和漏极布线之间的间 隔。因此,可以使沟道长度极微小。

通过在半导体层上方使源极布线和漏极布线交叉,源极布线和 漏极布线与半导体层电连接,且可以减小半导体层的图案尺寸。

附图说明

在附图中:

图1A和1B每个都示出了显示本发明一个方面(实施模式1) 的顶视图;

图2A和2B分别是示出本发明一个方面(实施模式l)的顶视 图和截面图;

图3示出了激光束绘图设备(实施模式1);

图4A和4B每个都示出了本发明一个方面(实施模式2)的顶 视图;

图5A和5B分别是示出本发明一个方面(实施模式2)的顶视 图和截面图;

图6是液晶显示器件(实施例1)的截面图的一个例子; 图7是发光器件(实施例2 )的截面的一个例子; 图8是示出本发明的结构(实施例3)的截面的一个例子; 图9A至9F每个都是描绘半导体器件(实施例3)的例子的外 视图;

图IOA至IOD每个都示出了电子器件(实施例4)的例子;以

图11示出了电子器件(实施例4)的例子。

M实施方式 在下文中描述了本发明的实施模式。 [实施模式1]

这里,在图1A、 1B、 2A和2B中示出了4吏用沟道-蚀刻型TFT 作为开关元件的有源矩阵型显示器件的制造实例。

在具有绝缘表面的衬底110上方形成基绝缘膜110。形成由绝 缘膜如氧化硅、氮化硅、氮氧化硅或氧氮化硅制成的基膜作为基绝缘膜IIO。如果没必要,则不是特别需要形成基绝缘膜。

除了由熔化法或浮动法制造的非碱性玻璃村底如硼硅酸钡玻

璃、硼硅酸铝玻璃或铝硅酸盐玻璃外,对于村底100可以使用在该

制造工艺中能够耐受处理温度的耐热性的塑料村底等。

其后,在基绝缘膜110上方通过溅射法形成具有100至600 nm 厚度的导电膜。可由选自Ta、 W、 Ti、 Mo、 Al或Cu的元素的单层、 或主要含上述元素的合金材料或化合物材料、或其叠层形成导电膜。 另外,可使用以掺杂有杂质元素如磷的多晶硅膜为代表的半导体膜。

随后,由光掩模形成抗蚀剂膜,且通过干式蚀刻法或湿式蚀刻 法进行蚀刻。在蚀刻步骤中,蚀刻导电膜以形成栅电极101。

其后,通过等离子体CVD法或溅射法顺序地形成栅绝缘膜111、 半导体膜和n型半导体膜。

作为栅绝缘膜111,使用主要含通过PCVD法形成的氧化硅、氮 化硅、氧氮化硅或氮氧化硅的材料。另外,通过液滴喷射法喷射硅 氧烷基聚合物并且烘焙以形成含烷基基团的SiOx膜作为栅绝缘膜 111。

利用以硅烷或锗为代表的半导体材料气体,由用气相生长法、 溅射法或热CVD法制造的非晶半导体膜或半非晶半导体膜形成半导 体膜。

可通过利用硅烷气体和磷化氢气体的PCVD法形成n型半导体 膜,其可以由非晶半导体膜或半非晶半导体膜形成。当提供n型半 导体膜时(这是优选的),降低了半导体膜和电极(在以后步骤中 将形成的电极)的接触电阻。然而,如果需要可形成n型半导体膜。 另外,代替n型半导体膜,可使用p型半导体膜。可使用包含给半 导体赋予p型导电性的杂质元素如硼的半导体膜作为p型半导体膜。

其后,提供掩模,并选择性地蚀刻半导体膜和n型半导体膜, 以获得岛状半导体膜和n型半导体膜106。掩模的制造方法可以是 液滴喷射法或印刷法(凸版印刷、平板、铜板印刷、丝网印刷等)。 虽然可通过液滴喷射法或印刷法直接形成所希望的掩模图案,但为 了形成高分辨率的掩模图案,希望通过液滴喷射法或印刷法形成粗 糙的掩模图案,然后,可通过进行选择性的曝光形成精细的抗蚀剂图案。

其后,通过液滴喷射法选择性地喷射包含光敏材料和导电材料

如银(Ag)、金(Au)、铜(Cu)、鴒(W)或铝(Al )的组合物, 以形成导电膜图案103。形成导电膜图案103使其覆盖半导体膜和n 型半导体膜。

此时的顶视图示于图1A中。由虚线围绕的区域示出了半导体膜 图案形状的轮廓102,且该区域具有长度L和宽度W的矩形形状。 应当注意,尽管该实施模式描述了矩形形状的情形,但本发明不局 限于矩形形状,且可使用椭圆形、L形状或不规则形状。

其后,进行选择性激光照射以啄光一部分的导电膜图案。这里, 进行激光扫描以便激光穿过具有矩形形状的半导体膜。通过激光扫 描在半导体膜上形成两个交叉的部分。由于光敏材料预包含在待喷

射的导电膜的材料溶液中,所以会出现由于激光照射引起的化学反 应。这里,示出了使用负型光敏材料作为光敏材料的例子,其允许 通过激光光线发生化学反应的部分留下。可以通过激光照射获得精 确的图案形状,尤其是具有薄宽度的布线。

在此,参考图3描述激光束绘图设备。激光束绘图设备401包 括:用于在激光照射时进行各种类型控制的个人计算机(在下文中 称为PC) 402;用于输出激光束的激光振荡器403;激光振荡器403 的电源404;用于衰减激光束的光学系统(ND滤光器)405;用于调 制激光束强度的声光调制器(AOM) 406;具有用于增大或缩小激光 束截面的透镜、用于改变光路的反射镜等的光学系统407;具有X 台架和Y台架的衬底移动机械装置409;用于将从PC输出的控制数 据转换成数字-模拟的D/A转换器410;用于根据从D/A转换器输出 的模拟电压控制声光调制器(AOM)的驱动器411;以及用于输出用 于驱动衬底移动机械装置409的驱动信号的驱动器412。

可以使用可以振荡紫外光、可见光或红外光的激光振荡器作为 激光振荡器403。可以使用KrF、 ArF、 XeCl、 Xe等的准分子激光振 荡器、He、 He-Cd、 Ar、 He-Ne、 HF等的气体激光振荡器、使用掺杂 有Cr、 Nd、 Er、 Ho、 Ce、 Co、 Ti或Tm的晶体如YAG、 GdV04、 YV04、 YLF或YA103的固态激光振荡器、GaN、 GaAs、 GaAlAs、 InGaAsP等的半导体激光振荡器作为激光振荡器。注意到优选的是将基波的第 一至第五谐波中的任何一个应用到固态激光振荡器。

可使用多个激光振荡器来缩短照射时间,且可对待烘焙的一个 衬底的多个部分进行激光照射。

随后,描述使用激光束绘图设备将光敏材料曝露到光中的方法。 光敏材料在这里表示变成导电膜图案的导电膜的材料(包含光敏材 料)。

当将衬底408设置在衬底移动机械装置409上时,PC 402用图 中未示出的相机检测在村底上作标记的记号位置。接下来,基于检 测的标记的位置数据和预输入的绘图数据,PC 402产生用于移动衬 底移动机械装置409的移动数据。其后,PC 402经由驱动器411控 制从声光调制器(A0M) 406输出的光的量。于是,在由光学系统405 衰减了从激光振荡器403输出的激光束后,由声光调制器(A0M)406 将光的量控制为预定量。另一方面,通过光学系统407改变从声光 调制器(A0M) 406输出的激光束的光路和光束形状,且由透镜聚集 该激光束。其后,用光束照射在衬底上方形成的光敏材料以曝光。 此时,根据由PC 402产生的移动数据控制衬底移动机械装置409 在X方向和Y方向上的移动。因此,用激光束照射预定的部分,并 且进行光敏材料的啄光。

发射到光敏材料的激光光线的部分能量转换成热量,以便使一 部分的光敏材料反应。因此,图案的宽度变得略比激光束的大。而 且,由于可以容易地聚集具有短波长的激光光线以具有更小的光束 直径,所以优选地发出具有短波长的激光束以形成具有微小宽度的 图案。

通过光学系统将在光敏材料表面上的激光束点的形式处理成点 状形状、圆形形状、椭圓形形状、矩形形状或线性形式(严格意义

来讲,细长椭圓形形状)。激光束点的形式可以是圓的。然而,由 于具有均匀宽度的图案可以用线性的激光点来形成,所以激光束点

的形式优选是线性的。

这里,在移动衬底的同时选择性地发射激光束。然而,本发明 不局限于此。可以通过将激光束扫描到X或Y轴方向中来发出激光束。在这种情况下,优选使用多角形反射镜或检流计反射镜作为光

学系统407。

然后,通过使用蚀刻剂(或显影剂)进行显影奉移除多余的部 分,且进行主烘焙以形成用作源极布线104或漏极布线105的金属 布线。

可选地,在滴入导电膜的材料溶液以及在室内烘干或预烘焙之 后,可进行通过激光照射的曝光。

当每单位面积用于曝光的激光光线的能量更大时,能够使主烘 焙变得没必要。可以通过减少主烘焙步骤来缩短制造工艺。作为显 影剂,可以使用有机溶剂、碱性水溶液等。例如,当将碱性水溶液 用于显影时,优选包含在碱中可溶解的聚合物(如丙烯酸甲酯、丙 烯酸乙酯或丙烯酸异丙酯)作为用于形成导电膜图案103的组合物。

此时的顶视图示于图1B中。如图1B所示,暴露出没有与源极 布线104或漏极布线105交叠的n型半导体膜106。另外,在该阶 段,半导体膜和n型半导体膜具有相同的图案。

半导体膜的一端和另一端之间的长度L是L1、与漏极布线交叠 的区域的长度、与漏极布线交叠的区域和半导体膜一端之间的长度 L2、与源极布线交叠的区域的长度、以及与源极布线交叠的区域和 半导体膜另一端之间的长度L3的和。应当注意,源极布线104和漏 极布线105之间的间隔Ll等于将形成的沟道形成区的长度。

然后,利用源极布线104和漏极布线105作为掩模来蚀刻n型 半导体膜的一部分和半导体膜的上部分。如果有必要则进行氢处理。 此时,完成了沟道-蚀刻型TFT,该沟道-蚀刻型TFT具有变成有源 层的沟道形成区107、用于与源极布线104欧姆接触的源区108、和 用于与漏极布线105欧姆接触的漏区109。 可形成保护沟道形成区 107的绝缘膜。通过利用绝缘膜如氮化硅或氮氧化硅作为用于保护 的绝缘膜,可以保护沟道形成区107不会受到由于杂质引起的污染, 由此,能够增加TFT的可靠性。

其后,形成电极112使其与漏极布线105交叠。通过液滴喷射 法或印刷法,形成由含氧化铟锡(ITO )、含氧化硅的氧化铟锡(ITS0)、 氧化锌(ZnO)、氧化锡(Sn02)等的复合材料制成的预定图案以及

15对它烘焙,来获得电极112。

在通过液滴喷射法或印刷法形成IT0的情况下,可使用透明导 电膜的前体,例如,使用液体材料,其中以有机铟和有机锡的比为 97: 3的方式在二甲苯中混合8%的有机铟和有机锡。

在形成液晶显示器件的情况下,将电极112称为像素电极。而 且,在形成反射型液晶显示器件的情况下,对于电极112形成具有 反射性的金属膜图案如银(Ag)或铝(Al )。

在形成发光显示器件的情况下,使用电极112作为第一电极; 形成覆盖电极112边缘的隔板(还称为堤(bank));形成用作电 致发光层的层,即包含有机化合物的层,以及最后形成第二电极。 注意到,有必要的是考虑功函来选择第一电极和第二电极的材料, 并且根据像素结构,第一电极和第二电极每个都可以用作阳极或阴 极。

当形成电极112时的顶视图示于图2A中。另外,图2B示出了 沿着图2A的线A-B得到的截面图。

如上所述,在该实施模式中,将由液滴喷射法形成的导电膜图 案暴露于激光光线,并且显影,由此实现了微小的图案。通过由液 滴喷射法直接在衬底上方形成各种图案,即使使用了第五代和以后 的具有超过1000 ,的侧面的玻璃衬底,也可以容易地制造显示面 板。

当将获得的TFT等转移到柔性塑料膜上时,首先在衬底100上 方形成剥离层(也称为分离层),形成待分离的用于TFT等的层。 然后,移除或破坏剥离层,从衬底100分离元件如TFT,接着,提 供粘接层并且将该元件贴附到塑料膜上。应当注意,没有特别地限 制从衬底剥离该层的剥离步骤,且可使用公知的方法。尤其是,利 用在日本专利申请公开No. 2003-174153中描述的剥离技术和转移 技术,可以将在玻璃衬底上方通过500匸或以上的热处理获得的高 场效应迁移率的TFT以良好的产量转移到塑料衬底。在日本专利申 请公开No. 2003-174153中描述的剥离技术和转移技术是一种剥离 方法,其中在衬底上方形成金属层,在金属层上方叠置氧化物层, 此时,在金属层和氧化物层之间的界面处产生了金属氧化物层,并且利用金属氧化物层在随后的步骤中进行剥离。

具体地,在玻璃衬底上方通过溅射法形成鴒膜,并且通过溅射 法叠置氧化硅膜。当通过溅射法形成氧化硅膜时,形成了非晶态的

氧化鹌层。然后,在氧化硅膜上方形成如TFT的元件。通过在元件 形成工艺中进行4001C或以上的热处理来结晶化氧化钨层。当向此 处施加物理力时,在氧化鴒层的内部或界面处会出现剥离。可以将 以该方式剥离的层(包括如TFT的元件)转移到塑料村底上。

在当进行剥离时各层之间的粘接性低的情况下,存在低粘接性 的部分很可能被剥离或破坏的危险性。在喷射包含导电材料的组合 物的液滴之后,进行选择性激光照射,由此,在短的时间进行导电 颗粒的熔化,并且增加了与基膜的粘接性。然而,包括少量有机树 脂的金属布线在剥离步骤可能具有剥离缺陷。根据本发明,通过移 除未被激光照射的一部分以及在其上形成处于接触的绝缘膜,来进 行最小化。因此,增加了在绝缘膜和基膜之间的接触面积,由此减 小了很可能在剥离步骤中出现的剝离缺陷。

[实施模式2]

参考图4A、 4B、 5A和5B描迷制造具有沟道-停止型TFT作为开 关元件的有源矩阵显示器件的实例。

如同在实施模式l中一样,在具有绝缘表面的衬底500上方形 成基绝缘膜510。形成由绝缘膜如氧化硅、氮化硅、氧氮化硅或氮 氧化硅制成的基膜作为基绝缘膜510。如果没必要,则没有特别地 需要形成基绝缘膜。

其后,在基绝缘膜510上方通过溅射法形成具有100至600 nm 厚度的导电膜。可由选自Ta、 W、 Ti、 Mo、 Al或Cu的元素的单层、 或主要含上述元素的合金材料或化合物材料、或其叠层形成导电膜。 另外,可使用以掺杂杂质元素如磷的多晶硅膜为代表的半导体膜。

随后,由光掩模形成抗蚀剂膜,且通过干式蚀刻法或湿式蚀刻 法进行蚀刻。在该蚀刻步骤中,蚀刻导电膜以形成栅电极501。

其后,通过等离子体CVD法或溅射法顺序地形成栅绝缘膜511 和半导体膜。作为栅绝缘膜511,使用主要含由PCVD法形成的氧化 硅、氮化硅、氧氮化硅或氮氧化硅的材料。使用以硅烷或锗为代表的半导体材料气体、或主要含有机材料

的半导体膜,由通过气相生长法、溅射法或热CVD法制造的非晶半 导体膜(含Si或Ge的半导体膜)形成半导体膜。作为主要含有机 材料的半导体膜,可以使用主要舍其包括相同数量的碳或同素异形 体的碳(除金刚石外)和另 一元素的物质的半导体膜(如在室温(20 )显示出至少l(T3cm2/V • s的载流子迁移率的材料,例如,71共轭 系芳族胺化合物、链状化合物、有机颜料、有机硅化合物等)。具 体地,给出了并五苯、并四苯、噻吩低聚物衍生物、苯撑衍生物、 酞菁化合物、聚乙炔衍生物、聚噻吩衍生物、花青染料等。

然后,例如通过等离子体CVD法形成无机绝缘膜,且通过光刻 技术将该无机绝缘膜在所希望的区域中形成为所希望的形状,以形 成沟道保护膜514和515。另外,还可以滴入含光敏材料的材料溶 液,例如含光敏材料的聚酰亚胺、含光敏材料的聚乙烯醇等,并且 用激光光线选择性照射以移除未被照射的部分,由此在形成沟道保 护膜514和515时形成了图案。

其后,通过光刻技术将半导体膜形成为所希望的图案形状。这 里,将半导体膜的图案形状形成为岛状形状,图4A中的虚线示出了 半导体膜的轮廓,由虚线围绕的内部对应于半导体膜。

之后,通过等离子体CVD法等形成具有一种导电性的半导体膜, 例如n型半导体膜。

然后,通过光刻技术将n型半导体膜形成为所希望的图案。

其后,通过液滴喷射法选择性地喷射包含光敏材料和导电材料 如银(Ag)、金(Au)、铜(Cu)、鴒(W)或铝(Al )的组合物以 形成导电膜图案503。形成导电膜图案503以覆盖半导体膜、n型半 导体膜和沟道保护膜。

此时的顶视图示于图4A中。应当注意到,尽管该实施模式描述 了半导体膜具有矩形形状的情况,但本发明不局限于矩形形状,且 可采用椭圆形状、L形状或不规则形状。

其后,选择性地进行激光照射,以将一部分导电膜图案暴露于 激光光线。这里,进行激光扫描,以便使激光光线穿过具有矩形形 状的半导体膜。通过激光扫描在半导体膜上形成五个交叉部分。由于在待被喷射的导电膜的材料溶液中预包含光敏材料,所以会出现 由于激光照射引起的化学反应。逸里,示出了利用负型光敏材料作 为光敏材料的实例,其允许与激光光线进行化学反应的部分留下。 可以通过激光照射获得精确的图案形状,特别地,获得薄宽度的布 线'

然后,通过使用蚀刻剂(或显影剂)进行显影来移除多余的部

分,并且烘焙以形成用作源极布线504或漏极布线505的金属布线。

可选地,在滴入导电膜的材料ii:液且在室内干燥或预烘焙之后, 可进行通过激光照射的曝光。

当每单位面积使用于曝光的激光光线的能量更大时,有可能使 主烘焙变得没有必要。可以通过咸少主烘焙步骤来缩短制造工艺。

作为显影剂,可以使用有机容剂、碱性水溶液(如金属碱性水 溶液或有机碱性水溶液)等。另外,可以以不失去溶解能量的程度 将水加到有机溶剂中。

此时的顶视图示于图4B中。如图4B所示,暴露出了不与源极 布线504或漏极布线505交叠的n型半导体膜508、 509和516。在 使用含磷的非晶硅膜作为n型半导体膜以及在以后的步骤中叠置含 硅的绝缘膜的情况下,当以该方式暴露出n型半导体膜508、 509 和516时,可以增强暴露出的部分和含硅的绝缘膜之间的粘接性。

图4B中所示的TFT是双栅极TFT,其中半导体层在两个部分中 与栅电极交叠且具有两个沟道。在与沟道交叠的部分中提供沟道保 护膜514和515。在两个沟道之间,提供了 n型半导体膜516和在 该n型半导体膜上方形成的布线图案517。这里,为了避免在显影 工艺中的污染,n型半导体膜和沟道保护膜覆盖半导体图案507,以 便保护半导体图案507。

因此,半导体膜图案507的一端和另一端之间的长度L是以下

长度的总和:与漏极布线交叠的区域的长度;与漏极布线交叠的区 域和半导体膜一端之间的长度;与沟道保护膜514交叠的区域的长

度;在沟道和布线图案517之间的长度;与布线图案交叠的部分的 长度(三个部分的总和);三个部分之间的两个区域的长度;布线 图案517和另一沟道之间的长度;与沟道保护膜515交叠的沟道的

19长度;与源极布线交叠的区域的长度;以及与源极布线交叠的区域 和半导体膜另 一端之间的长度。

然后,形成由无机绝缘膜或有机绝缘膜制成的层间绝缘膜513。 使用通过PCVD法形成的主要含氧化硅、氮化硅、氧氮化硅或氮氧化 硅的材料作为层间绝缘膜513。另外,作为用于层间绝缘膜513的其 它材料,可使用通过涂布法平整化其表面的有机树脂(树脂材料如 环氧树脂、丙烯酸树脂、酚醛树脂、酚醛清漆树脂、密胺树脂和聚 氨酯树脂)。而且,作为用于层间绝缘膜513的材料的另一实例,可 使用由硅氧烷聚合物形成的含烷基的Si(X膜。

在层间绝缘膜中形成到达漏极布线505的接触孔520,并且形 成与接触孔交叠的电极512。在该实施模式中,使在将形成接触孔 520的区域中的漏极布线505弯曲(成Z字形)以形成凹状和凸状, 由此提高了粘接性。另夕卜,像漏极布线一样还使布线图案517弯曲, 以形成单行程形状(stroke shape),由此对于曝光来i兌可以容易 地进行激光扫描。通过使布线图案具有单行程形状,可以平滑地进 行激光扫描。

作为电极512,可使用氧化铟锡(IT0)、含氧化硅的氧化铟锡 (ITS0)、氧化锌(ZnO)、氧化锡(Sn02)等来形成所希望的图案。 而且,可使用金属如银(Ag)、金(Au)、铜(Cu)、鴒(W)或铝 (Al)。电极512具有与栅绝缘膜511接触的结构。即使电极512 和漏极布线505之间的粘接性不是这么高,只要电极512和栅绝缘 膜511之间的粘接性高就可接受。

将在使用电极512作为像素电极的情况下的一个像素的一部分 的顶视图示于图5A中。图5B是沿着图5A的线C-D得到的截面图。

可使用电极512作为连接电极或用作天线的导电图案,而不局 限于像素电极或发光元件的电极(阴极或阳极)。

如上所述,在该实施模式中,将由液滴喷射法形成的导电图案 暴露于激光光线并且显影以形成微小的图案。具体地,由于可以使 源极布线小型化,所以可以增加液晶显示器件的孔径比。

当将获得的TFT等转移到柔性塑料膜上时,还可以首先在衬底 500上方形成剥离层(还称为分离层),以及形成待分离的用于TFT的层等。然后,移除或破坏分离层,从衬底500分离元件如TFT,

提供粘接层以及将该元件贴附于塑料膜上。 该实施模式可以与实施模式1自由组合。 在下面的实施例中将详细地描述具有上述结构的本发明。 [实施例1]

可以使用在实施模式1或实施模式2中示出的TFT作为开关元 件来制造有源矩阵型液晶显示器。

在下文中示出了利用在实施模式2中所示的TFT作为开关元件 的有源矩阵液晶显示器件的制造方法。图6示出了有源矩阵液晶显 示器件的实例。注意到图6中与实施模式2中相似的部分由与实施 模式2中相同的附图标记表示。

在形成源极布线504和漏极布线505之后形成绝缘膜513。在 绝缘膜513中形成接触孔,并形成用作像素电极的电极512。使用 透明导电膜用于电极512。

然后,形成定向膜530使其覆盖电极512。可采用液滴喷射法、 丝网印刷法或偏移印刷法来形成定向膜530。之后,对定向膜530 的表面进行摩擦处理。

然后,给对衬底533提供由透明电极制成的对电极534和形成 于上方的定向膜532。然后通过液滴喷射法形成具有闭合图案的密 封剂(未示于图中),以便围绕与像素部分交叠的区域。这里,由 于在以后的步骤中滴入液晶,所以示出了其中绘图闭合图案的密封 剂的实例。然而,可在提供具有开口的密封图案并且将TFT衬底贴 附于此处之后使用滴入法,通过该滴入法用毛细现象注入液晶。

接下来,在减压下滴入液晶以便防止气泡进入,并且使两个衬 底彼此贴附。在闭合环密封图案中滴入液晶一次或多次。在许多情 况下使用扭转向列(TN)模式作为液晶的定向模式。在该TN模式中, 相对于从光的入口到出口的光的极化以901C扭转液晶分子的定向 方向。在制造TN液晶显示器件的情况下,将衬底粘贴在一起,以便 使摩擦方向正交化。

可通过喷洒球状间隔物、形成由树脂制成的柱状间隔物或将填 充物混合到密封剂中来保持该对4寸底之间的间距。上述的柱状间隔物由主要含选自丙烯酸、聚酰亚胺、聚酰亚胺酰胺和环氧树脂中的

至少一种材料的有机树脂材料;氧化硅、氮化硅、氧氮化硅和氮氧 化硅中的任意一种材料;或这些材料的叠层膜的无机材料形成。

接下来,将不需要的村底切段。在从一个衬底获得多个面板的 情况下,分离掉每个面板。在从一个衬底获得一个面板的情况下, 可以通过粘贴预先切好的对衬底来跳过切段步骤。

通过公知的方法经由各向异性的导电层粘贴FPC。经由上述步 骤完成图6中所示的液晶模块。而且,如必要的话,则贴附如滤色 片的光学膜。在透射型液晶显示器件的情况下,将极化板贴附同时 到有源矩阵村底和对村底上。

由液滴喷射法形成导电膜图案,并且用激光光线选择性地照射。 因此,可以形成比恰好在喷射之后的导电图案本身更小型化的源极 布线或漏极布线。根据本发明,可以减少步骤数目和节省材料,其 结果还能够减少成本。

实施例1可以与实施模式1或实施模式2自由组合。

[实施例2]

可以利用实施模式1或实施模式2中所示的TFT来制造有源矩 阵型发光显示器件。

在下文中示出了利用实施模式2中所示的TFT作为开关元件来 制造有源矩阵发光显示器件的方法。这里,作为一个实例描述了 TFT 是n沟道TFT的情况。图7示出了有源矩阵发光显示器件的例子。 注意,图7中与实施模式2中相似的部分用与实施模式2中相同的 附图标记表示。

在形成源极布线504和漏极布线505之后形成绝缘膜513。在 绝缘膜513中形成接触孔,且形成用作连接电极的电极615。使用 由溅射法形成的金属导电膜用于电极615。

然后,形成具有平面性的绝缘膜616。在具有平面性的绝缘膜 616中形成接触孔,以及形成第一电极618。

第一电极618优选用作阴极。为了由第一电极反射光,形成由 主要含金属颗粒如银(Ag )、金(Au )、铜(Au )、钨(W )或铝(Al ) 的组合物制成的所希望的图案来形成第一电极618。然后,形成覆盖第一电极618外围部分的隔板631。通过利用 含硅的材料、有机材料或化合物材料形成隔板(还称为堤)631。另 外,可使用多孔膜。由于侧表面的曲率半径连续地改变而上层中的 薄膜没有任何的断开,所以优选的是使用光敏或非光敏材料如丙烯 或聚酰亚胺。

随后,形成用作电致发光层的层,也就是含有机化合物的层 630。含有机化合物的层630具有叠层结构,且通过使用蒸发法或涂 布法形成每个层。例如,在阴极上方顺序地形成电子传输层(电子 注入层)、发光层、空穴传输层、空穴注入层。

注意,在形成含有机化合物的层630之前,优选进行在氧气氛 中的等离子体处理或在真空环境下的热处理。在使用蒸发法的情况 下,预先通过电阻加热汽化有机化合物,且当打开挡板沉积它时向 衬底散射。通过在金属掩模中提供的开口,将汽化的有机化合物向 上散射以被蒸发在衬底上。另外,可对准用于各发光色(R、 G和B) 的掩模以获得全色。

代替分离地形成R、 G和B,使用发出单色的材料作为含有机化 合物的层630,并且可以组合滤色片或颜色转换层以获得全色显示。

随后,形成第二电极632。利用透光的透明导电膜来形成用作 发光元件阳极的第二电极632。例如,除了 ITO或ITSO之外,使用 其中在氧化铟中混合了 2至20°/。的氧化锌(ZnO)的透明导电膜。发 光元件具有其中含有机化合物的层630介于第一电极和第二电极之 间的结构。另外,需要考虑功函来选择第一和第二电极的材料。根 据像素结构,笫一和第二电极可以是阳极或阴极。

另外,可形成保护第二电极632的保护层。

随后,用密封剂(图中未示出)粘贴密封衬底634来密封发光 元件。用透明填充物633填充用密封剂围绕的区域。作为填充物633, 没有特别地限制,只要它具有光传输性能, 一般可使用紫外固化或 热固化的环氧树脂。

最后用各向异性导电膜将FPC贴附到端子电极上。

通过上述步骤,制造了如图7所示的有源矩阵发光器件。由此, 通过液滴喷射法形成导电膜的图案并选择性地用激光光线照射该图案,可以形成比恰在喷射之后的导电图案本身更小型化的源极布线 或漏极布线。根据本发明,能够咸少步骤数目以及节省材料,其结 果还能够减少成本。

实施例2可以与实施模式1或实施模式2自由组合。 [实施例3]

还可以利用实施模式1或实施模式2中示出的TFT来形成无线 芯片(还称为无线处理器、无线存储器或无线标签)。

参考图8描述可以根据本发明形成的无线芯片的结构。无线芯 片由薄膜集成电路803和连接于其的天线804构成。薄膜集成电路 和天线夹在覆盖材料801和802之间。可用粘接剂将薄膜集成电路 803贴附到覆盖材料上。在图8中,用粘接剂805将薄膜集成电路 803的一个表面贴附到覆盖材料801上。

利用实施模式1或2中示出的TFT形成薄膜集成电路803,然 后通过公知的剥离工艺剥离掉并且贴附于覆盖材料上。薄膜集成电 路803所使用的半导体元件不局限于此,除了TFT之外,还可以使 用存储器元件、二极管、光电转换元件、电阻器元件、线圈、电容 器元件、电感等。

如图8所示,层间绝缘膜811形成在薄膜集成电路803的TFT 上方,且天线804经由层间绝缘膜811连接到TFT上。而且,由氮 化硅等制成的阻挡膜812形成于层间绝缘膜811和天线804的界面 上方。

通过液滴喷射法喷射含光敏材料和如金、银或铜的导体的液滴 形成导电图案,并且用激光光线选择性地照射,以形成天线804的 图案。以该方式,形成天线804。移除未用激光光线照射的导电膜 图案的一部分。当通过液滴喷射法形成天线时,可以实现步骤数目 减少以及节省材料,引起了成本减少。

对于覆盖材料801和802中的每一个,优选使用膜(由聚丙烯、 聚酯、乙烯基、聚氟乙烯、氯乙烯等制成);纤维材料的纸;叠置 了基膜(聚酯、聚酰胺、无机气相沉积膜、纸等)和粘接性合成树 脂膜(丙烯酸基合成树脂、环氧基合成树脂等)的叠置膜等。通过 热压法将该膜贴附于主体上。在热压法中,通过热处理熔融提供在该膜最外表面中的粘接层或形成为最外层的层(不是粘接层),并 且通过施加压力贴附。

在覆盖材料使用易燃无污染的材料如纸、纤维和碳石墨的情况 下,可以烧掉或切掉所使用的无线芯片。由于即使被燃烧了也不会 产生有毒气体,所以利用这种材料的无线芯片是无污染的。

尽管在图8中用粘接剂805将无线芯片贴附于覆盖材料801上, 但无线芯片可贴附到物体上,而不是覆盖材料801上。

这种无线芯片的应用范围如此广泛。图9示出了有关无线芯片 应用的实例。无线芯片可装配在各种物体上,例如,如钞票、硬币、 证券、债券、证书(执照、居住卡等,参见图9A)、用于包装物体 的容器(包装纸、瓶等,参见图9C)、记录媒质(DVD软件、录像 带等,参见图9B)、车辆(自行车等,参见图9D)、附件(包、眼 镜等)、食物、植物、动物、人体、衣服、生活品和电子器件或物 体的货运标签(参见图9E和9F)。电子器件包括液晶显示器件、 EL显示器件、电视机(还简称为TV、电视或电视接收器)、蜂窝电 话等。

无线芯片810贴附于物体的表面上或结合到物体中,以便无线 芯片810固定到该物体上。例如,无线芯片可结合到书的纸张或包 装的有机树脂中。当无线芯片结合到钞票、硬币、证券、债券、证 书等中时,可以防止伪造。另外,当无线芯片结合到用于包装物体 的容器、记录媒质、附件、食物、衣服、生活品、电子器件等中时, 可以提供更有效的测试系统、租用系统等。以在通过公知的剥离工 艺剥离掉形成于村底上方的薄膜集成电路之后提供覆盖材料的方 式,获得可以根据本发明形成的无线芯片;因此,无线芯片可以缩 小尺寸、厚度和重量,且可以装配在物体上,而不会损坏物体的设 计。另外,由于这种无线芯片具有柔韧性,所以可以用于具有曲面 的物体,如瓶和导管。

当将可以根据本发明形成的无线芯片应用到产品管理和分销系 统上时,可以获得复杂的系统。例如,当由提供在传送带内部的读 出器/记录器读取存储于装配在货运标签上的无线芯片中的信息时, 读出诸如分销过程和交付地址的信息以易于检查物件和分销包装。实施例3可以与实施模式1或实施模式2自由组合。 [实施例4]

作为根据本发明的半导体器件和电子器件,给出了诸如摄影机 或数字照相机的照相机、护目镜型显示器(头部安装的显示器)、 导航系统、音频再生器件(如汽车音频组件或音频组件)、个人计 算机、游戏机、移动信息终端(移动计算机、蜂窝电话、移动游戏 机、电子书籍等)、装配有记录媒质的图像再生器件(具体地,其 可以再生记录媒质如数字万用盘(DVD)的内容且具有用于显示图像 的显示器的器件)等。电子器件的具体实例示于图IOA至IOD和图 11中。

图IOA示出了数字照相机,其包括主体2101、显示部分2102、 成像部分、操作键2104、快门2106等。图IOA示出了从显示部分 2102—侧看到的数字照相机,且成像部分没有示于图IOA中。根据 本发明,可以在减小制造成本的工艺中制造数字照相机。

图10B示出了包括主体2201、外壳2202、显示部分2203、键 盘2204、外部连接端口 2205、鼠标2206等的膝上型个人计算机。 根据本发明,可以在减小制造成本的工艺中制造膝上型个人计算机。

图IOC示出了提供有记录媒质的便携式图像再生器件(具体地 为DVD播放机),其包括主体2401、外壳2402、显示部分A 2403、 显示部分B 2404、记录媒质(如DVD)读取部分2405、操作键2406、 扬声器部分2407等。显示部分A 2403主要显示图像信息,显示部 分B 2404主要显示字符信息。提供有记录媒质的这种图像再生器件 的范畴包括家用游戏机等。根据本发明,可以在减小制造成本的工 艺中制造图像再生器件。

图10D示出了包括外壳1901、支撑体1902、显示部分1903、 扬声器部分1904、视频输入端子1905等的显示器件。通过使用由 上述实施模式中针对显示部分1903和驱动电路描述的制造方法形 成的薄膜晶体管来制造该显示器件。给出液晶显示器件、发光器件 等作为显示器件的实例,具体地,用于显示信息的所有类型的显示 器件例如包括用于计算机的显示器件、用于接收电视广播的显示器 件和用于广告的显示器件。根据本发明,可以在减小制造成本的工艺中制造显示器件,尤其是具有22至55英寸大屏幕的大尺寸显示 器件。

在图11所示的蜂窝电话900中,用铰链910将包括操作开关 904、麦克风905等的主体(A) 901连接到包括显示面板(A) 908、 显示面板(B) 909、扩音器906等的主体(B) 902上,且可由铰链 910开关。显示面板(A) 908和显示面板(B) 909与电路板907 — 起放置在主体(B) 902的外壳903中。设置显示面板(A) 908和显 示面板(B) 909的像素部分,以i更它们通过形成于外壳903中的开 口可见。

至于显示面板(A) 908和显示面板(B) 909,可以根据蜂窝电 话900的功能适当地确定规格,如像素的数目。例如,可以组合显 示面板(A) 908和显示面板(B) 909分别作为主屏幕和子屏幕。

显示面板(A) 908包括实施例1至3中所示的TFT作为像素的 晶体管。根据本发明,可以在减小制造成本的工艺中制造移动信息 终端。

根据蜂窝电话的功能或应用,可以以各种模式改变根据实施例 4的蜂窝电话。例如,它可以是通过在铰链910中实施成像元件的 配有照相机的蜂窝电话。即使当将操作开关904、显示面板(A)908 和显示面板(B) 909放置在一个外壳中,以便所有的器件都设置在 外壳内部时,也可以获得上述的效果。而且,即使当将实施例4的 结构应用到提供有多个显示部分的信息显示终端上时,也能够获得 相同的效果。

如上所述,通过利用用于实施本发明的制造方法或结构,换句 话说,实施模式1和2和实施例1至3的制造方法或结构中的任何 一个,可以完成各种类型的电子器件。

根据本发明,在包括导电图案形成步骤的电子器件的制造工艺 中,可以减少曝光步骤或显影步骤,且可以使得所使用材料的量减 少。因此,不管村底尺寸,可以实现成本显著减少。

本申请以2005年2月3日在曰本专利局申请的曰本专利申请序 列No. 2005-027312为基础,在此将其全部内容引入作为参考。

Claims (21)

1. 一种有源矩阵型显示器件,包括:形成于衬底上方的第一薄膜晶体管;形成于所述衬底上方并与所述第一薄膜晶体管电连接的像素电极;与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括第二薄膜晶体管;其中所述第一薄膜晶体管和所述第二薄膜晶体管各自包括半导体层作为活性层,所述半导体层包括金属氧化物,该金属氧化物包括至少铟。
2. —种有源矩阵型显示器件,包拴 形成于村底上方的第一薄膜晶体管;形成于所述衬底上方并与所述笫一薄膜晶体管电连接的像素电极; 与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括第二 薄膜晶体管;其中所述第一薄膜晶体管和所述笫二薄膜晶体管各自为底栅型薄膜晶 体管并各自包括半"!^^#为活性层,所述半"^^层包括金属氧化物,该金 属氧化物包括至少铟。
3. —种有源矩阵型显示器件,包括: 形成于村底上方的第一薄膜晶体管; 形成于所述第一薄膜晶体管上方的层间绝缘膜;形成于所述层间绝缘膜上方并与所述第一薄膜晶体管电连接的像素电极;与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括第二 薄膜晶体管;其中所述第一薄膜晶体管和所迷第二薄膜晶体管各自包括半^, 为活性层,所述"f"^^层包括金属氧化物,该金属氧^^包括至少铟。
4. 一种有源矩阵型显示器件,包拴 形成于衬底上方的第一薄膜晶体管; 形成于所述第一薄膜晶体管上方的层间绝缘膜;形成于所述层间绝缘膜上方并与所述第一薄膜晶体管电连接的像素电极;与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括第二薄膜晶体管;其中所述第一薄膜晶体管和所述第二薄膜晶体管各自为底栅型薄膜晶体管并各自包括半"f^L^ft为活性层,所述半"H^层包括金属氧化物,该金属氧化物包括至少铟。
5. —种具有有源矩阵型显示器件的电子器件,所述有源矩阵型显示器 件包括:形成于村底上方的第一薄膜晶体管;形成于所述衬底上方并与所述第一薄膜晶体管电连接的像素电极; 与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括笫二 薄膜晶体管;其中所述第一薄膜晶体管和所述第二薄膜晶体管各自包括半^^ft 为活性层,所述半"H^层包^^^r属IU匕物,该金属fUt^包括至少铟。
6. —种具有有源矩阵型显示器件的电子器件,所述有源矩阵型显示器 件包括:形成于村底上方的第一薄膜晶体管;形成于所述村底上方并与所述第一薄膜晶体管电连接的像素电极; 与所述第一薄膜晶体管操作连接的驱动电路,该驱动电路包括第二 薄膜晶体管;其中所述第一薄膜晶体管和所述第二薄膜晶体管各自为底栅型薄膜晶 体管并各自包括半"H^层作为活性层,所述半"f"^层包括金属氧化物,该金 属氧化物包括至少铟。
7. 根据权利要求1-4任一项的有源矩阵型显示器件,其中所述金 属氧化物包括锌、镓和铟。
8. 根据权利要求1或3的有源矩阵型显示器件,其中所述第一薄膜晶体管为顶栅型薄膜晶体管。
9. 根据权利要求1-4任一项的有源矩阵型显示器件,其中所述有 源矩阵型显示器件为液晶显示器件。
10. 根据权利要求l-4任一项的有源矩阵型显示器件,其中所述有 源矩阵型显示器件为EL显示器件。
11. 根据权利要求1-4任一项的有源矩阵型显示器件,其中所述衬底为塑料村底。
12. 根据权利要求l-4任一项的有源矩阵型显示器件,其中所述村 底为玻璃衬底。
13. 根据权利要求5或6的电子器件,其中所述金属氧化物包4辦、 镓和铟。
14. 根据权利要求5的电子器件,其中所述第一薄膜晶体管为顶栅 型薄膜晶体管。
15. 根据权利要求5或6的电子器件,其中所述有源矩阵型显示器 件为液晶显示器件。
16. 根据权利要求5或6的电子器件,其中所述有源矩阵型显示器 件为EL显示器件。
17. 根据权利要求5或6的电子器件,其中所述村底为塑料衬底。
18. 根据权利要求5或6的电子器件,其中所述衬底为玻璃衬底。
19. 根据权利要求5或6的电子器件,其中所述电子器件为计算机。
20. 根据权利要求5或6的电子器件,其中所述电子器件为电视。
21. 根据权利要求5或6的电子器件,其中所述电子器件用于广告。
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