CN101476156A - 掺杂钆钇钪镓石榴石、钆钇钪镓铝石榴石及其熔体法晶体生长方法 - Google Patents
掺杂钆钇钪镓石榴石、钆钇钪镓铝石榴石及其熔体法晶体生长方法 Download PDFInfo
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- CN101476156A CN101476156A CNA2008102462175A CN200810246217A CN101476156A CN 101476156 A CN101476156 A CN 101476156A CN A2008102462175 A CNA2008102462175 A CN A2008102462175A CN 200810246217 A CN200810246217 A CN 200810246217A CN 101476156 A CN101476156 A CN 101476156A
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- 239000002223 garnet Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 34
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 30
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 29
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 238000002109 crystal growth method Methods 0.000 title claims description 22
- 229910052688 Gadolinium Inorganic materials 0.000 title claims description 6
- 229910052727 yttrium Inorganic materials 0.000 title claims description 5
- 229910052706 scandium Inorganic materials 0.000 title description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 title description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 claims abstract description 81
- 239000002994 raw material Substances 0.000 claims abstract description 50
- 239000000126 substance Substances 0.000 claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 21
- 229910052691 Erbium Inorganic materials 0.000 claims description 19
- 229910052693 Europium Inorganic materials 0.000 claims description 19
- 229910052772 Samarium Inorganic materials 0.000 claims description 19
- 229910052775 Thulium Inorganic materials 0.000 claims description 19
- MOCSSSMOHPPNTG-UHFFFAOYSA-N [Sc].[Y] Chemical compound [Sc].[Y] MOCSSSMOHPPNTG-UHFFFAOYSA-N 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 16
- 238000003746 solid phase reaction Methods 0.000 claims description 15
- 238000010671 solid-state reaction Methods 0.000 claims description 15
- 238000005204 segregation Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 9
- 150000002910 rare earth metals Chemical class 0.000 claims description 9
- 230000000694 effects Effects 0.000 claims description 7
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 235000012041 food component Nutrition 0.000 claims description 3
- 239000005417 food ingredient Substances 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 230000002194 synthesizing effect Effects 0.000 claims description 3
- 238000010189 synthetic method Methods 0.000 claims description 3
- 229910005224 Ga2O Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 abstract description 8
- ZPIUIPVBAFXDEA-UHFFFAOYSA-N [Gd].[Y].[Sc] Chemical compound [Gd].[Y].[Sc] ZPIUIPVBAFXDEA-UHFFFAOYSA-N 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 238000003837 high-temperature calcination Methods 0.000 abstract 2
- 230000003471 anti-radiation Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- TVFHPXMGPBXBAE-UHFFFAOYSA-N [Sc].[Gd] Chemical compound [Sc].[Gd] TVFHPXMGPBXBAE-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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CN2008102462175A CN101476156B (zh) | 2008-12-30 | 2008-12-30 | 掺杂钆钇钪镓石榴石、钆钇钪镓铝石榴石及其熔体法晶体生长方法 |
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CN2008102462175A CN101476156B (zh) | 2008-12-30 | 2008-12-30 | 掺杂钆钇钪镓石榴石、钆钇钪镓铝石榴石及其熔体法晶体生长方法 |
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CN101476156A true CN101476156A (zh) | 2009-07-08 |
CN101476156B CN101476156B (zh) | 2011-12-14 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102071463A (zh) * | 2011-01-08 | 2011-05-25 | 中国科学院安徽光学精密机械研究所 | 掺杂稀土锗镓酸盐RExLn1-xGaGe2O7发光材料及其熔体法晶体生长方法 |
CN102127812A (zh) * | 2010-12-27 | 2011-07-20 | 中国科学院安徽光学精密机械研究所 | 高效抗辐射中红外激光晶体Re,Er:GSGG及其制备方法 |
CN102127813A (zh) * | 2010-12-27 | 2011-07-20 | 中国科学院安徽光学精密机械研究所 | 高效中红外Pr,Er:YSGG激光晶体及其制备方法 |
CN102277620A (zh) * | 2011-08-02 | 2011-12-14 | 中国科学院合肥物质科学研究院 | 一种高效抗辐射激光晶体及制备方法 |
CN103710755A (zh) * | 2013-12-27 | 2014-04-09 | 中国科学院合肥物质科学研究院 | 稀土共掺激活的钇铝钪石榴石发光材料及其熔体法晶体生长方法 |
CN103981574A (zh) * | 2014-04-28 | 2014-08-13 | 中国科学院合肥物质科学研究院 | Pr3+离子掺杂的钙镁锆钆镓石榴石及其熔体法晶体生长方法 |
CN104962994A (zh) * | 2015-07-30 | 2015-10-07 | 山东大学 | 导模法生长特定尺寸稀土掺杂含镓石榴石系列晶体的方法 |
CN111962151A (zh) * | 2020-08-07 | 2020-11-20 | 上海应用技术大学 | 一种稀土掺杂的抗辐照含钪钆铝石榴石晶体的制备方法 |
CN113045315A (zh) * | 2021-03-18 | 2021-06-29 | 苏州璋驰光电科技有限公司 | 一种改善高Cr掺杂浓度YAG透明陶瓷材料透过率的方法 |
CN114892261A (zh) * | 2022-04-08 | 2022-08-12 | 中国科学院上海光学精密机械研究所 | 三价铬离子掺杂的钆钇钪铝石榴石激光晶体、制备方法及其应用 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101307496B (zh) * | 2008-02-03 | 2012-12-05 | 中国科学院安徽光学精密机械研究所 | 钆钇钪镓石榴石晶体gysgg及其熔体法晶体生长方法 |
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2008
- 2008-12-30 CN CN2008102462175A patent/CN101476156B/zh active Active
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102127812A (zh) * | 2010-12-27 | 2011-07-20 | 中国科学院安徽光学精密机械研究所 | 高效抗辐射中红外激光晶体Re,Er:GSGG及其制备方法 |
CN102127813A (zh) * | 2010-12-27 | 2011-07-20 | 中国科学院安徽光学精密机械研究所 | 高效中红外Pr,Er:YSGG激光晶体及其制备方法 |
CN102127813B (zh) * | 2010-12-27 | 2013-03-20 | 中国科学院安徽光学精密机械研究所 | 高效中红外Pr,Er:YSGG激光晶体及其制备方法 |
CN102071463A (zh) * | 2011-01-08 | 2011-05-25 | 中国科学院安徽光学精密机械研究所 | 掺杂稀土锗镓酸盐RExLn1-xGaGe2O7发光材料及其熔体法晶体生长方法 |
CN102071463B (zh) * | 2011-01-08 | 2012-10-31 | 中国科学院安徽光学精密机械研究所 | 掺杂稀土锗镓酸盐RExLn1-xGaGe2O7发光材料及其熔体法晶体生长方法 |
CN102277620A (zh) * | 2011-08-02 | 2011-12-14 | 中国科学院合肥物质科学研究院 | 一种高效抗辐射激光晶体及制备方法 |
CN103710755A (zh) * | 2013-12-27 | 2014-04-09 | 中国科学院合肥物质科学研究院 | 稀土共掺激活的钇铝钪石榴石发光材料及其熔体法晶体生长方法 |
CN103981574A (zh) * | 2014-04-28 | 2014-08-13 | 中国科学院合肥物质科学研究院 | Pr3+离子掺杂的钙镁锆钆镓石榴石及其熔体法晶体生长方法 |
CN104962994A (zh) * | 2015-07-30 | 2015-10-07 | 山东大学 | 导模法生长特定尺寸稀土掺杂含镓石榴石系列晶体的方法 |
CN104962994B (zh) * | 2015-07-30 | 2017-09-26 | 山东大学 | 导模法生长特定尺寸稀土掺杂含镓石榴石系列晶体的方法 |
CN111962151A (zh) * | 2020-08-07 | 2020-11-20 | 上海应用技术大学 | 一种稀土掺杂的抗辐照含钪钆铝石榴石晶体的制备方法 |
CN113045315A (zh) * | 2021-03-18 | 2021-06-29 | 苏州璋驰光电科技有限公司 | 一种改善高Cr掺杂浓度YAG透明陶瓷材料透过率的方法 |
CN114892261A (zh) * | 2022-04-08 | 2022-08-12 | 中国科学院上海光学精密机械研究所 | 三价铬离子掺杂的钆钇钪铝石榴石激光晶体、制备方法及其应用 |
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Address after: 230031 Shushan Lake Road, Hefei, Anhui 350 Patentee after: HEFEI INSTITUTES OF PHYSICAL SCIENCE, CHINESE ACADEMY OF SCIENCES Address before: 230031 Shushan Lake Road, Hefei, Anhui 350 Patentee before: Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences |
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Effective date of registration: 20240223 Address after: Room 504, Building 13, East District, No. 350 Shushanhu Road, Shushan District, Hefei City, Anhui Province, 230000 Patentee after: Zhang Qingli Country or region after: China Address before: 230000 Jinxiu Avenue 316, Peach Blossom Industrial Park, Jingkai District, Hefei City, Anhui Province Patentee before: ZHONGKE JIUYAO TECHNOLOGY Co.,Ltd. Country or region before: China |