CN101476152A - Preparation of single crystal ZnSe/Ge heterojunction nano-wire - Google Patents
Preparation of single crystal ZnSe/Ge heterojunction nano-wire Download PDFInfo
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- CN101476152A CN101476152A CNA2008102072403A CN200810207240A CN101476152A CN 101476152 A CN101476152 A CN 101476152A CN A2008102072403 A CNA2008102072403 A CN A2008102072403A CN 200810207240 A CN200810207240 A CN 200810207240A CN 101476152 A CN101476152 A CN 101476152A
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Abstract
The invention relates to a method for preparing a monocrystalline ZnSe/Ge heterojunction nano line which includes steps that ZnSe and Ge powder are placed on a middle position of an silica tube as raw material, a silicon sheet is used as lining and is placed in a silica boat leeward of the mixing powder, one end of the silica tube connects with an air supplying system, another end connects with a mechanism vacuum pump, argon gas with 100-200sccm flow is inlet, temperature in a middle position of the silica reaction tube is controlled in 1000-1100 DEG. C, depositing pressure is 200 Torr (1Torr approachs to 133Pa), the heating electrical source is closed after depositing reaction 2h, then cools temperature to room temperature automatically, and ZnSe/Ge heterojunction nano line is obtained. Th monocrystalline ZnSe/Ge heterojunction nano line has advantages of uniform diameter, smooth surface, better crystallinity degree, high quality heterojunction interface and simple preparing technique. The method can be completed using one step thermal evaporation.
Description
Technical field
The invention belongs to the preparation field of semiconductor heterojunction nanowire, particularly relate to the preparation method of a kind of single crystal ZnSe/Ge heterojunction nano-wire.
Background technology
Semiconductor nano material and preparation of devices thereof have become the research focus of physics, chemistry, biology and material association area.In recent years, people have prepared various semiconductor nano material according to different methods, and have carried out the making of nano-device on this basis, comprise field effect transistor, single-electron device, heterojunction photodiode, single nano wire laser apparatus or the like.
The monocrystalline heterojunction nano-wire is the fresh content of semiconductor nano material research field.Because electricity, light, the magnetic property of its novelty, and small-size effect will have a wide range of applications in nanoelectronics and photoelectronics field.The main method of preparation monocrystalline heterojunction nano-wire is chemical vapour deposition, laser ablation and template at present.These method majorities synthesize by heat, secondary or other complicated supplementary meanss are finished, and are difficult to prepare the nano wire with high quality heterogeneous interface, and therefore the development of many new devices is restricted.
Summary of the invention
Technical problem to be solved by this invention provides the preparation method of a kind of single crystal ZnSe/Ge heterojunction nano-wire, the present invention preparation that single crystal ZnSe/the Ge heterojunction nano-wire has diameter is even, smooth surface, better crystallinity degree, high-quality heterogeneous interface is arranged, this preparation technology is simple, adopts a step thermal evaporation to finish.
The preparation method of a kind of single crystal ZnSe of the present invention/Ge heterojunction nano-wire comprises:
ZnSe and Ge powder are placed on the silica tube mid-way as starting material, with silicon chip is substrate, puts into the quartz boat of mixed powder leeward, silica tube one termination airing system, the other end tool vacuum pump of meeting sb. at the airport, feeding flow is the argon gas of 100-200sccm, and control crystal reaction tube mid-way temperature is 1000 ℃～1100 ℃, and deposition pressure is 200Torr (1Torr ≈ 133Pa), behind the deposition reaction 2h, close heating power supply, be cooled to room temperature automatically, promptly get the ZnSe/Ge heterojunction nano-wire.
Described crystal reaction tube mid-way temperature is 1050 ℃.
Beneficial effect
(1) the present invention preparation that single crystal ZnSe/the Ge heterojunction nano-wire has diameter is even, smooth surface, better crystallinity degree has high-quality heterogeneous interface;
(2) this preparation technology is simple, adopts a step thermal evaporation to finish.
Description of drawings
Fig. 1 is the experimental installation synoptic diagram;
Fig. 2 is the electron scanning micrograph of the ZnSe/Ge heterojunction nano-wire of embodiment 1;
Fig. 3 is the electron scanning micrograph of the ZnSe/Ge heterojunction nano-wire of embodiment 2;
Fig. 4 (a) is the electron scanning micrograph of the ZnSe/Ge heterojunction nano-wire of embodiment 3;
Fig. 4 (b) is the X-ray diffraction pattern of the ZnSe/Ge heterojunction nano-wire of embodiment 3;
Fig. 5 (a) is the transmission electron microscope photo of the ZnSe/Ge heterojunction nano-wire of embodiment 3;
Fig. 5 (b) is the selected area electron diffraction style of the ZnSe/Ge heterojunction nano-wire of embodiment 3.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in and limit the scope of the invention.Should be understood that in addition those skilled in the art can make various changes or modifications the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
ZnSe and Ge powder are placed on the silica tube mid-way as starting material.With silicon chip is substrate, puts into the quartz boat of mixed powder leeward, silica tube one termination airing system, a termination oil-sealed rotary pump.Feeding flow is the argon gas of 100-200sccm, and crystal reaction tube mid-way temperature is 1000 ℃ in the experiment, and deposition pressure is 200Torr (1Torr ≈ 133Pa), behind the deposition reaction 2h, close heating power supply, be cooled to room temperature automatically, obtain ZnSe/Ge heterojunction nano-wire (as shown in Figure 2).
Embodiment 2
ZnSe and Ge powder are placed on the silica tube mid-way as starting material.With silicon chip is substrate, puts into the quartz boat of mixed powder leeward, silica tube one termination airing system, a termination oil-sealed rotary pump.Feeding flow is the argon gas of 100-200sccm, and crystal reaction tube mid-way temperature is 1050 ℃ in the experiment, and deposition pressure is 200Torr (1Torr ≈ 133Pa), behind the deposition reaction 2h, close heating power supply, be cooled to room temperature automatically, obtain ZnSe/Ge heterojunction nano-wire (as shown in Figure 3).
ZnSe and Ge powder are placed on the silica tube mid-way as starting material.With silicon chip is substrate, puts into the quartz boat of mixed powder leeward, silica tube one termination airing system, a termination oil-sealed rotary pump.Feeding flow is the argon gas of 100-200sccm, and crystal reaction tube mid-way temperature is 1100 ℃ in the experiment, and deposition pressure is 200Torr (1Torr ≈ 133Pa), behind the deposition reaction 2h, close heating power supply, be cooled to room temperature automatically, obtain the ZnSe/Ge heterojunction nano-wire.
The uniform nano wire of big area size has covered whole substrate as can be seen from Fig. 4 (a) photo, and its diameter is about 200nm, and length can reach the hundreds of micron.Diffraction peak among Fig. 4 (b) all index is that (JCPDS is 37-1463) with Ge (JCPDS, diffraction peak 04-0545) cube mutually for a cube phase ZnSe.From Fig. 5 (a) photo as can be seen, can show that along the different contrasts of nano wire radial light and shade this nano wire is the coaxial heterojunction structure that is made of two kinds of differing materials, and have interface very clearly between two kinds of nano wires.Fig. 5 (b) is the SAED style of interface, a cover diffraction pattern only occurs, shows good lattice match and high-quality heterogeneous interface between ZnSe and the Ge.
The above results shows that the ZnSe/Ge diameter that utilizes this method to prepare is even, smooth surface, and better crystallinity degree has high-quality heterogeneous interface.
Claims (1)
1. the preparation method of single crystal ZnSe/Ge heterojunction nano-wire comprises:
ZnSe and Ge powder are placed on the silica tube mid-way as starting material, with silicon chip is substrate, puts into the quartz boat of mixed powder leeward, silica tube one termination airing system, the other end tool vacuum pump of meeting sb. at the airport, feeding flow is the argon gas of 100-200sccm, and control crystal reaction tube mid-way temperature is 1000 ℃～I100 ℃, and deposition pressure is 200Torr, behind the deposition reaction 2h, close heating power supply, be cooled to room temperature automatically, promptly get the ZnSe/Ge heterojunction nano-wire.2. the preparation method of a kind of single crystal ZnSe according to claim 1/Ge heterojunction nano-wire is characterized in that: described crystal reaction tube mid-way temperature is 1050 ℃.
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| CN2008102072403A CN101476152B (en) | 2008-12-18 | 2008-12-18 | Preparation of single crystal ZnSe/Ge heterojunction nano-wire |
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| CN2008102072403A CN101476152B (en) | 2008-12-18 | 2008-12-18 | Preparation of single crystal ZnSe/Ge heterojunction nano-wire |
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| CN101476152A true CN101476152A (en) | 2009-07-08 |
| CN101476152B CN101476152B (en) | 2011-08-31 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163641A (en) * | 2011-03-17 | 2011-08-24 | 合肥工业大学 | ZnSe nano-photoelectric detector and preparation method thereof |
| CN103073052A (en) * | 2012-12-19 | 2013-05-01 | 东华大学 | Preparation method of zinc germanate longitudinal twin crystal nano-wire |
| CN103540999A (en) * | 2013-10-18 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of component-adjusting ternary (Sb1-xBix)2Se3 nanowire |
| CN104362512A (en) * | 2014-10-13 | 2015-02-18 | 北京大学 | Silicon-based nano laser manufacturing method |
| CN109881247A (en) * | 2019-03-14 | 2019-06-14 | 北京大学 | A kind of preparation method bending SnTe monocrystal nanowire |
-
2008
- 2008-12-18 CN CN2008102072403A patent/CN101476152B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102163641A (en) * | 2011-03-17 | 2011-08-24 | 合肥工业大学 | ZnSe nano-photoelectric detector and preparation method thereof |
| CN102163641B (en) * | 2011-03-17 | 2012-08-22 | 合肥工业大学 | ZnSe nano-photoelectric detector and preparation method thereof |
| CN103073052A (en) * | 2012-12-19 | 2013-05-01 | 东华大学 | Preparation method of zinc germanate longitudinal twin crystal nano-wire |
| CN103073052B (en) * | 2012-12-19 | 2014-10-15 | 东华大学 | Preparation method of zinc germanate longitudinal twin crystal nano-wire |
| CN103540999A (en) * | 2013-10-18 | 2014-01-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of component-adjusting ternary (Sb1-xBix)2Se3 nanowire |
| CN103540999B (en) * | 2013-10-18 | 2016-04-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Ternary (the Sb that a kind of composition is adjustable 1-xbi x) 2se 3the preparation method of nano wire |
| CN104362512A (en) * | 2014-10-13 | 2015-02-18 | 北京大学 | Silicon-based nano laser manufacturing method |
| CN109881247A (en) * | 2019-03-14 | 2019-06-14 | 北京大学 | A kind of preparation method bending SnTe monocrystal nanowire |
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| CN101476152B (en) | 2011-08-31 |
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