CN101444085A - Semiconductor image sensing device - Google Patents
Semiconductor image sensing device Download PDFInfo
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- CN101444085A CN101444085A CNA2007800170049A CN200780017004A CN101444085A CN 101444085 A CN101444085 A CN 101444085A CN A2007800170049 A CNA2007800170049 A CN A2007800170049A CN 200780017004 A CN200780017004 A CN 200780017004A CN 101444085 A CN101444085 A CN 101444085A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
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Abstract
A signal charge corresponding to an incident light quantity is accumulated in a first node (N1) of each pixel circuit (10). An accumulated charge exhaust circuit (20) includes each of first nodes (N1) of the plurality of pixel circuits (10) belonging to the same pixel group, and a second node (N2) connected through discharge gates (DG) functioning as variable resistance elements. Second node (N2) functions as a floating drain during an ON period of a control switch (24), while accumulating the signal charge overflowing from each pixel circuit (10), in a capacitor (22) during an OFF period of control switch (24) provided at an intermediate timing in one frame period. When the incident light to the pixel group is intense, a resistance value of each discharge gate (DG) is lowered in response to an increase of the signal charge accumulated in capacitor (22), so that the signal charge accumulated in each pixel circuit can be exhausted once at the above intermediate timing.
Description
Technical field
The present invention relates to semiconductor camera element; Further clear and definite, even the present invention relates to exist in the visual field the big district of luminance difference also can and can detect the semiconductor camera element of enough contrasts in the great dynamic range shooting in the whole district.
Background technology
Headed by video camera and digital camera, at present portable phone etc. also in-built CCD (Charge-coupleddevice: charge coupled device) and CMOS (Complementary metal-oxide semiconductor: complementary metal oxide semiconductors (CMOS)) solid-state imager such as imaging part, be so-called semiconductor image sensor (hereinafter being also referred to as " semiconductor camera element "), these semiconductor camera elements are extensively popularized as imaging apparatus inexpensive and that power consumption is little.
Yet the visual sensing of the sensing ability specific heat of semiconductor camera element is very different.Even there is the Luminance Distribution of 4 figure places～5 figure place degree in vision one visual field of heat, also can fully detect the contrast of bright place and dark place.Utilization is in the function that interior each cell of photosensory cell energy of nethike embrane is adjusted its photobehavior, realizes the contrast sensing ability that this is good.
In contrast, existing semiconductor camera element, its whole pixel photobehaviors are identical, so bright place in the visual field and dark place difficulty obtain enough contrasts simultaneously.Therefore, for example the spy of Japan opens 2000-No. 340779 communiques (hereinafter referred to as patent documentation 1) and the spy of Japan opens the composition that 2005-No. 160031 communiques (hereinafter referred to as patent documentation 2) disclose the semiconductor camera element of the mechanism that comprises the luminous sensitivity scope in each image element circuit that can move according to the incident light quantity to neighboring pixel, to realize that the luminous sensitivity scope is big and the contrast detecting function is strong.Patent documentation 1: the spy opens communique patent documentation 2 2000-No. 340779: the spy opens communique 2005-No. 160031
Yet, the composition that above-mentioned patent documentation 1 discloses needs to dispose the 1st sensitization detecting element that the sensitive volume of detection itself uses and interconnects the 2nd sensitization detecting element with near the average received light quantity of pixel detecting by resistive element and other image element circuit in each image element circuit.Therefore, may bring to be difficult to dwindle pixel scale, this is for the requirement that adapts to high-resolutionization in recent years and integral.
Again, because this 1st and the 2nd sensitization detecting element of series connection in each image element circuit, the noise that flows into the node that is electrically connected with the image element circuit of periphery might be superimposed upon in the photoelectric current of described the 1st sensitization detecting element, might cause the easy noise of examining, and detection accuracy may reduce.
In the composition that above-mentioned patent documentation 2 discloses, though the sensitization detecting element of each pixel circuit configuration is 1, in 1 image element circuit, need to handle multiple signal code, so be used for the composition complexity of the peripheral circuit of this processing again.Because this peripheral circuit complexity, the manufacturing of each element of possible image element circuit (especially transistor) requires high accuracy, to suppress the characteristic deviation between pixel.
The present invention finishes for addressing this is that, and forms the high accuracy of the contrast that bright place and dark place also can fully be provided under the big situation of the Luminance Distribution that provides in the visual field and small-sized semiconductor camera element even the objective of the invention is to easy circuit.
Summary of the invention
In order to solve above-mentioned problem, semiconductor camera element of the present invention comprises a plurality of image element circuits that are divided into a plurality of pixel groups; And the store charge that each pixel group is provided with discharges circuit.Each pixel group comprises a plurality of image element circuits.Each image element circuit comprises the 1st sensitization detecting element; The 1st node of regulation electric capacity; And the 1st initializing circuit.The 1st sensitization detecting element produce with to the corresponding signal charge of the incident light quantity of this image element circuit.Make on the 1st node structure and store the signal charge that the 1st sensitization detecting element produces.The 1st initializing circuit is removed the described signal charge that described the 1st node stores corresponding to switching image duration.Make on the store charge discharging circuit structure by during the regulation in each image duration is constantly during the predefined charge discharging,, carry out the signal charge discharging action that signal charge is flowed out from the 1st node according to incident light quantity to the pixel group of correspondence.Become big mode according to the signal charge amount of the time per unit that flows out from the 1st node greatly and relatively with incident light quantitative change, carry out signal charge discharging action the pixel group of correspondence.Reading circuit to each image element circuit in each image duration, the corresponding signal of telecommunication of signal charge amount that the 1st node of output and the output time of setting constantly by the regulation after during the charge discharging stores.
Moreover store charge discharging circuit is to the incident light quantity of the pixel group of correspondence hour, do not carry out the described signal charge discharging action during the charge discharging.
According to above-mentioned semiconductor camera element, can utilize store charge discharging circuit that each pixel group is provided with the time, (regulation constantly) temporary transient discharging of signal charge that each image element circuit is stored constantly and at that time the corresponding amount of incident light quantity in the middle of 1 image duration to the incident intensity (illumination height) of relevant pixel group.Thereby, when illumination is high, according to 1 image duration to this regulation in 1 image duration constantly to the ratio between the storage life again of output time, enlarge dynamic range.On the other hand, when (illumination is low), does not carry out the signal charge discharging action of store charge discharging circuit, and can not enlarge dynamic range a little less than the incident light to relevant pixel group, guarantee the shooting of contrast.
Thus, the storage capacity that utilization is taken as 1 and the signal charge that only produces according to this sensitization detecting element with the sensitization detecting element of each pixel circuit configuration is surveyed the simple circuit of sensitive volume and is formed, even enlarge illumination when high dynamic range and under the big situation of Luminance Distribution in the visual field, also can detect enough contrasts of bright place and dark place.
Preferably store charge discharging circuit comprises the 2nd node; The CONTROLLED POTENTIAL generating unit; Potential nodes; The control switch element; And charge discharging door.The 2nd node has the regulation electric capacity of the storage of making on the structure because of the signal charge of saturated the 1st node outflow from a plurality of image element circuits that relevant pixel group comprises of signal charge of the 1st node.The CONTROLLED POTENTIAL generating unit produces the CONTROLLED POTENTIAL with the potential change of the 2nd node.Potential nodes is supplied with the regulation current potential that attracts signal charge to use.The control switch element is arranged between this potential nodes and the 2nd node, cuts off during charge discharging, and connects during non-described charge discharging.The charge discharging door is connected between relevant pixel group interior each the 1st node and the 2nd node, flows to the discharging size of current of the signal charge of the 2nd node from each the 1st node according to CONTROLLED POTENTIAL control.Again, make during charge discharging on the charge discharging door, the variation according to changing because of the potential change CONTROLLED POTENTIAL based on the 2nd node of the storage capacity of the signal charge of the 2nd node increases the discharging electric current.
By being taken as this composition, can judge the incident light intensity of this pixel group according to the storage capacity of the signal charge that flows out because of the sensitization detecting element the saturated image element circuit in same pixel group of signal charge, whether control wants the signal charge discharging action of store charge discharging circuit.And, beyond the specified time limit that store charge discharging circuit moves,, utilize as overflowing the electric capacity that is formed on the 2nd node of releasing and a little moving by combining with the regulation current potential, can realize the mechanism of store charge discharging circuit.That is, can utilize and overflow the electric capacity of releasing, reduce the circuit element quantity that configuration needs again, realize the present invention.
Or preferably store charge discharging circuit comprises the 2nd sensitization detecting element; The 2nd node; The CONTROLLED POTENTIAL generating unit; Potential nodes; The control switch element; And charge discharging door.The 2nd sensitization detecting element produce with to the corresponding signal charge of the incident light quantity of image element circuit.The 2nd node has the storage of making on the structure because of the signal charge of saturated the 1st node outflow from a plurality of image element circuits that relevant pixel group comprises of signal charge of the 1st node and the regulation electric capacity of the signal charge that the 2nd sensitization detecting element produces.The CONTROLLED POTENTIAL generating unit produces the CONTROLLED POTENTIAL with the potential change of the 2nd node.Potential nodes is supplied with the regulation current potential that attracts signal charge to use.The control switch element is arranged between this potential nodes and described the 2nd node, cuts off during charge discharging, and connects during non-described charge discharging.The charge discharging door is connected between relevant pixel group interior each the 1st node and the 2nd node, flows out to the discharging size of current of the signal charge of the 2nd node from each the 1st node according to CONTROLLED POTENTIAL control.Again, make during charge discharging on the charge discharging door, the variation according to changing because of the potential change CONTROLLED POTENTIAL based on the 2nd node of the storage capacity of the signal charge of the 2nd node increases the discharging electric current.
By being taken as this composition, can utilize in signal charge that the shared single sensitization detecting element (the 2nd sensitization detecting element) of a plurality of image element circuits in the same pixel group produces and this pixel group saturated signal charge in the sensitization detecting element (the 1st sensitization detecting element) in each image element circuit to survey the incident light quantity of this pixel group, and this is responded, carry out the action of discharging signal charge by store charge discharging circuit.Thus, shorten illumination relatively and obtain 1 required image duration of same dynamic range when high, therefore can carry out the shooting of further high speed.Also utilize and overflow the electric capacity of releasing, reduce the circuit element quantity that configuration needs again, and can realize the mechanism of store charge discharging circuit.
Or preferably store charge discharging circuit comprises the 2nd sensitization detecting element; The 2nd node; The CONTROLLED POTENTIAL generating unit; Potential nodes; The control switch element; And charge discharging door.The 2nd sensitization detecting element produce with to the corresponding signal charge of the incident light quantity of image element circuit.The 2nd node has the regulation electric capacity of making the signal charge that stores the generation of the 2nd sensitization detecting element on the structure.The CONTROLLED POTENTIAL generating unit produces the CONTROLLED POTENTIAL with the potential change of the 2nd node.Potential nodes is supplied with the regulation current potential that attracts signal charge to use.The control switch element is arranged between this potential nodes and described the 2nd node, cuts off during charge discharging, and connects during non-described charge discharging.The charge discharging door is connected between relevant pixel group interior each the 1st node and the 2nd node, flows out to the discharging size of current of the signal charge of the 2nd node from each the 1st node according to CONTROLLED POTENTIAL control.Again, make during charge discharging on the charge discharging door, the variation according to changing because of the potential change CONTROLLED POTENTIAL based on the 2nd node of the storage capacity of the signal charge of the 2nd node increases the discharging electric current.
By being taken as this composition, can utilize shared single sensitization detecting element (the 2nd sensitization detecting element of a plurality of image element circuits in the same pixel group, detect incident light quantity to this pixel group, and can be according to this testing result, whether control needs the signal charge discharging action of store charge discharging circuit.Also utilize and overflow the electric capacity of releasing, reduce the circuit element quantity that configuration needs again, and can realize the mechanism of store charge discharging circuit.
Again, preferably the charge discharging door is the variable resistor element that resistance changes with the CONTROLLED POTENTIAL from the CONTROLLED POTENTIAL generating unit.And, make resistance value on the variable resistor element structure and reduce with the variation of the CONTROLLED POTENTIAL corresponding with the increase of the signal charge storage capacity of the 2nd node.
Again, preferably the charge discharging door to comprise with the 1st impurity diffusion zone that constitutes the 1st node be that source electrode, the 2nd impurity diffusion zone that constitutes the 2nd node are the 1st field-effect transistor of drain electrode.The CONTROLLED POTENTIAL generating unit produces CONTROLLED POTENTIAL, and outputs to the grid of the 1st field-effect transistor, makes that the channel resistance between source electrode and the drain electrode reduces with the increase of the described signal charge storage capacity of the 2nd node.Again, each image element circuit also comprises the 2nd field-effect transistor and the 2nd initializing circuit.Make on the output time in the saturation region on the 2nd field-effect transistor structure or thereby the linear zone conducting is sent to the 3rd impurity diffusion zone with the signal charge that the 1st impurity diffusion zone stores.The 2nd initializing circuit is removed the signal charge in the 3rd impurity diffusion zone before the 2nd field-effect transistor conducting in same described image duration.And, make the corresponding signal of telecommunication of signal charge amount that the 3rd impurity diffusion zone on output and the output time stores on the reading circuit structure.
By being taken as this composition, can utilize the 1st and the 2nd field-effect transistor be respectively formed between the 2nd impurity diffusion zone and the 3rd impurity diffusion zone, store charge is discharged the signal charge that circuit or reading circuit transmission are stored in the 1st impurity diffusion zone that is equivalent to the 1st node.Thus, the contact that the 1st node is directly contacted is not set, and can takes out signal charge, therefore can constitute the 1st sensitization detecting element, make the high structure of noise immunity with the baried type diode.
Or in the best above-mentioned semiconductor camera element, store charge is discharged circuit be formed in a plurality of image element circuit area surrounded that pixel group corresponding in the plane that receives incident light comprises.
By being taken as this composition, can effectively dispose store charge discharging circuit, therefore can help the miniaturization of semiconductor camera element.
According to the present invention, even can form the high accuracy of the contrast that also can fully detect bright place and dark place under the big situation of the Luminance Distribution that realizes in the visual field and small-sized semiconductor camera element with easy circuit.
Description of drawings
Fig. 1 is the circuit diagram that the crucial portion summary of the semiconductor camera element of explanation embodiment of the present invention 1 is formed.
Fig. 2 is the vertical view that the configuration example of image element circuit shown in Figure 1 and store charge discharging circuit is shown.
Fig. 3 is the III-III cutaway view among Fig. 2.
Fig. 4 is the circuit diagram that the composition example of sign-changing amplifier shown in Figure 1 is shown.
Fig. 5 is the schematic diagram of the picture blooming of explanation during to the incident intensity of photodiode.
Fig. 6 is the schematic diagram that the action of releasing is overflowed in explanation.
Fig. 7 is the sequential chart of action of 1 image duration of the semiconductor camera element of explanation execution mode 1.
Fig. 8 is the formation of potential barrier of each time point of explanation sequential chart shown in Figure 7 and the schematic diagram that moves of signal charge.
Fig. 9 is the block diagram of main assembly that the semiconductor camera element of execution mode 1 is shown.
Figure 10 is the circuit diagram that the crucial portion summary of semiconductor camera element of the conversion example of explanation embodiment of the present invention 1 is formed.
Figure 11 is the sequential chart of action of 1 image duration of semiconductor camera element of the conversion example of explanation execution mode 1.
Figure 12 is the circuit diagram that the crucial portion summary of the semiconductor camera element of explanation embodiment of the present invention 2 is formed.
Figure 13 is the concrete cutaway view of forming example that store charge discharging circuit shown in Figure 12 is shown.
Figure 14 is the routine circuit diagram of the 1st composition that the image element circuit of execution mode 3 is shown.
Figure 15 is the routine circuit diagram of the 2nd composition that the image element circuit of execution mode 3 is shown.
Figure 16 is the routine circuit diagram of the 1st composition that the store charge discharging circuit of execution mode 3 is shown.
Figure 17 is the routine circuit diagram of the 2nd composition that the store charge discharging circuit of execution mode 3 is shown.
Label declaration
The 2nd, pixel group, the 3rd, district's (pixel group), the 5th, the power supply potential node, the 6th, the ground connection node, 10,10#, 11,11# is each image element circuit, the 12nd, and transmission node, the 14th, restore switch, the 16th, voltage amplifier, the 18th, pixel selection switch, 20,20#, 21,21# is a store charge discharging circuit, the 22nd, overflow the electric capacity of releasing, the 24th, control switch, the 26th, sign-changing amplifier, 27, the 28th, n-MOS transistor, the 30th, configuring area (photodiode), 32, the 35th, the frontier district, the 34th, configuring area (overflow and release a little), the 36th, configuring area (peripheral circuit), 60, the 65th, potential well, the 70th, signal charge, the 100th, p type silicon chip, 110, the 120th, n+ diffusion region, the 115th, anti-dazzling screen, the 120th, the N diffusion region, the 130th, n-diffusion region, 140, the 150th, insulating barrier, 145, the 155th, grid, 160, the 170th, n-MOS transistor (field-effect transistor), the 200th, semiconductor camera element, the 210th, control signal generation circuit, the 220th, voltage latch circuit, the 230th, holding wire, the 240th, data wire, the 260th, sign-changing amplifier, DG are the charge discharging doors, N1, N2, N3, Nf is a node, No is an out gate, and OFD laterally overflows to release a little, and PD is a photodiode, PS is the pixel selection control signal, RF restores control signal, and RO is a control signal, and RS is the pixel selection control signal, SUB is a substrate area, Tag is again between the storage life, and during Tdr was charge discharging, Tfr was 1 image duration, TG is a transmission of control signals, Vdat is the serial data signal, and VDD is a power supply potential, and Vout is an output voltage signal, VSS is an earthing potential, W1 overflows the vent discharge receiving part, and W2 is charge discharging student district, and W3 is a photodiode region, W4 is the transmission gate inferior segment, and W5 is a floating diffusion region.
Embodiment
Hereinafter, the execution mode that present invention will be described in detail with reference to the accompanying.Moreover, hereinafter part identical or suitable in the accompanying drawing is marked same label, do not repeat its explanation in principle.
Fig. 1 is the circuit diagram that the crucial portion summary of the semiconductor camera element of explanation embodiment of the present invention 1 is formed.
With reference to Fig. 1, image element circuit 10 has photodiode PD, transmission gate 12, recovery switch 14, voltage amplifier 16 and the pixel selection switch 18 as the sensitization detecting element.
To restore between switch 14 power supply potential node 5 that is configured in supply power current potential VDD and the node Nf that works as floating diffusion region, and make it carry out break-make according to the recovery control signal.Transmission gate 12 is connected between the node N1 and node Nf because of the photoelectric current storage assembly electric charge that produces photodiode PD.Break-make by transmission of control signals TG control transmission door 12.
Photodiode PD is configured between the ground connection node 6 and node N1 of supplying with earthing potential VSS.By ground connection node 6 anode of photodiode PD is offset to earthing potential VSS.Node N1 is corresponding to the negative electrode of photodiode PD.That is, in the image element circuit 10, signal charge is the electronics (negative electrical charge) as the majority carrier on the negative electrode (n type).
Moreover in the present embodiment, there are VDD in power supply potential VDD and earthing potential VSS〉relation of VSS, as long as and can utilize the required bias voltage of potential difference supply circuit work of VDD-VSS, then can be set at any current potential respectively.That is, even the property confirmed ground record earthing potential VSS also can be set at earthing potential any current potential (also can be negative potential) in addition.
In the semiconductor camera element of the present invention, a plurality of image element circuits 10 that are configured in photosurface are configured to every N (N is 〉=2 integer) image element circuit 10 constitute 1 group (pixel group).And, each pixel group configuration store charge discharging circuit 20.In the example of execution mode 1, every 4 adjacent image element circuits 10 constitute 1 pixel group.
Store charge discharging circuit 20 is shared by the N that comprises in the same pixel group (in the present embodiment being 4) image element circuit 10.Store charge discharging circuit 20 comprises node N2, control switch 24, sign-changing amplifier 26 and N charge discharging door DG.Form among the node N2 and overflow the electric capacity 22 of releasing.
Charge discharging door DG is connected between the interior node N2 of node N1 and store charge discharging circuit 20 in each image element circuit 10 that same pixel group comprises, works as variable resistor equivalently.According to the output potential Vg of sign-changing amplifier 26, the resistance of control charge discharging door DG.Particularly, constitute each charge discharging door DG, make output potential Vg high more, the resistance of each charge discharging door DG reduces more, and output potential Vg is low more, and the resistance of each charge discharging door DG is all the more big.
Fig. 2 illustrates the configuration example of the image element circuit and the store charge discharging circuit of each pixel group.
With reference to Fig. 2, in receiving the photosurface of incident light, the photodiode PD of each image element circuit 10 is configured to rectangular (district 30).Form 1 pixel group 2 by 4 adjacent on directions X in the photosurface and Y direction image element circuits 10.Suitably utilize the photodiode PD circuit unit in addition of district's 36 each image element circuit 10 of configuration between the district 30 that photodiode PD is set.Moreover, dispose the transmission gate 12 of each image element circuit 10 accordingly with district 30 and 36 frontier district 35, district.
The district 34 that the configuring area 30 of the N that comprises at same pixel group (4) photodiode PD is surrounded forms the node N2 (overflowing the electric capacity 22 of releasing) in the store charge discharging circuit 20.Again, the frontier district 32 with district 30 and district 34 disposes charge discharging door DG accordingly.Also suitably utilize other circuit element of district's 36 configuration store charge discharging circuit 20.
Like this, in each pixel group 2, store charge is discharged circuit 20 be configured in the district 3 that surrounds by the N that constitutes relevant pixel group (4) image element circuit 10.And, identical for the variable-resistance action of conduct of each charge discharging door DG, be taken as in each image element circuit 10 the position relation between node 2 (district 34) and the photodiode PD (district 30) common.
The concrete structure of image element circuit 10 shown in Figure 1 and store charge discharging circuit 20 then, is described with Fig. 3.Fig. 3 illustrates the structure example of 1 image element circuit 10 and connected store charge discharging circuit 20 in the same pixel group, and Fig. 3 is equivalent to the III-III cutaway view among Fig. 2.
With reference to Fig. 3, p type silicon chip 100 is supplied with earthing potential VSS by ground connection node 6, as the substrate current potential.Form n+ diffusion region 110 and 120 and n-the diffusion region 130 of baried type at the first type surface of p type silicon chip 100.
Form p type district on the top of the n-diffusion region 130 of baried type.Utilize the pn knot between n-diffusion region 130 and its p type district up and down, the photodiode PD in the pie graph 1.That is, in the execution mode 1, constitute photodiode PD as the baried type diode.
Channel region top between n+ diffusion region 110 and n-diffusion region 130 is that intermediary constitutes gate electrode 145 with insulating barrier 140.Thus, constitute with n-diffusion region 130 and be source electrode, be drain electrode, be the field-effect transistor of grid that with n+ diffusion region 110 promptly n-MOS transistor 160 with gate electrode 145.This n-MOS transistor 160 constitutes charge discharging door DG shown in Figure 1.
The output contact of gate electrode 145 with sign-changing amplifier 26 is connected.That is, the grid potential of n-MOS transistor 160 is the output potential Vg of sign-changing amplifier 26.For example form, realize sign-changing amplifier 26 by circuit shown in Figure 4.
With reference to Fig. 4,2 the n- MOS transistor 27 and 28 by series connection constitute sign-changing amplifier 26.
N-MOS transistor 27 is connected between the output contact N3 and power supply potential node 5 that produces output potential Vg, and its grid is connected with power supply potential node 5.Another n-MOS transistor 28 is connected between output contact N3 and the ground connection node 6, and its grid is connected with node 2.Output contact N3 is connected with gate electrode 145 shown in Figure 3.
Therefore, connect control switch 24, when node N2 was connected with power supply potential VDD, node N3 was set at the electronegative potential Vl than the high regulation current potential of earthing potential VSS, and the current potential of input node N2 becomes the high potential Vh than the low regulation current potential of power supply potential VDD when being reduced to earthing potential VSS.Like this, the output potential Vg of sign-changing amplifier 26 is according to the current potential of the node N2 that becomes input, at electronegative potential Vl (〉 VSS) and high potential Vh (change in＜VDD) the scope.
Again with reference to Fig. 3, by grid potential with sign-changing amplifier 260 control n-MOS transistor 160, make the resistance (Vg=Vl) when control switch 24 is connected of each charge discharging door DG become maximum Rh, current potential along with node N2 when control switch 24 cuts off reduces, when reaching Vg=Vh, reduce in the scope of the minimum value R1 of (, when node N2 is reduced to earthing potential VSS).Moreover when control switch 24 was connected, n-MOS transistor 160 also not exclusively disconnected, and therefore can form the transmission path of the signal charge from node N1 to node N2.
During control switch 24 connections, node N2 (being n+ diffusion region 110) is connected with power supply potential VDD, thereby a little works as overflowing to release.Here, utilize Fig. 5 and Fig. 6 explanation to overflow the action of releasing a little.
As Fig. 5 (a) and expression shown in Fig. 5 (b) of the Potential Distributing on its X-X cross section, during to the incident intensity of photodiode PD, produce signal charge 70 (negative electrical charge) in a large number, saturated so the potential well 60 that photodiode forms is filled up by signal charge 70.Thus, produce the phenomenon that is called " as fuzzy ": the signal charge 70 that overflows is used as glitch and detects by the potential well 65 that substrate area SUB flow into adjacent photodiode PD.
Therefore, as Fig. 6 (a) and expression shown in Fig. 6 (b) of the Potential Distributing on its X-X cross section, the OFD that releases that laterally overflows that absorbs signal charge 70 usefulness of overflowing from photodiode PD is configured between the photodiode PD.Utilize the regulation current potential (being power supply potential VDD in the present embodiment) of energy absorption signal electric charge 70 that the impurity range (the n+ diffusion region 110 among Fig. 3) of regulation conductivity type is setovered, laterally overflow an OFD that releases thereby form.Shown in the X-X cutaway view, laterally overflow an OFD that releases by being provided with, can absorb the signal charge 70 that overflows from photodiode PD, so can prevent to produce as blooming (Fig. 5).Described laterally overflow release select be form on the deep direction with each substrate overflow release vertical overflow release a little similarly general as the method that looks like fuzzy game.
With reference to Fig. 3, during control switch 24 cut-outs, n-diffusion region 110 is disconnected with power supply potential VDD again.Therefore, by the electric capacity 22 of releasing that overflows that is formed between p type silicon chip 100 and the n-diffusion region 110, store the signal charge that overflows from each photodiode PD (being specially node N1) of each image element circuit 10.
Therefore, during to the incident intensity of each image element circuit 10 (promptly to pixel group 2) in the pixel group 2, along with storing the signal charge that overflows from each photodiode PD, the current potential of node N2 reduces.Thus, output potential Vg rising along with sign-changing amplifier 26, the resistance of each charge discharging door DG (channel resistance of n-MOS transistor 160) reduces, and therefore promotes the charge discharging action of the node N1 of each image element circuit 10 to the node N2 of store charge discharging circuit 20.
In contrast, a little less than the incident light to pixel group 2, not during the flow-out signal electric charge, the current potential of node N2 does not reduce from power supply potential VDD from each photodiode PD.At this moment, the output potential Vg of sign-changing amplifier 26 raises, and therefore overflows the resistance (channel resistance of n-MOS transistor 160) of releasing and similarly keeping each charge discharging door DG when a little moving with 110 conducts of n+ diffusion region.
Like this, utilize to overflow and release a little, suppress to add the circuit element and the configuration area thereof that need, and can constitute the store charge discharging circuit 20 that carries out charge discharging action usefulness.
On the other hand, the channel region between n+ diffusion region 120 and n-diffusion region 130 is that intermediary forms gate electrode 155 with dielectric film 150.Thus, forming with n-diffusion region 130 is that source electrode, n+ diffusion region 120 are drain electrode, are the field-effect transistor of grid with gate electrode 155 that promptly the n-MOS transistor 170.N-MOS transistor 170 constitutes transmission gate 12 shown in Figure 1.
To gate electrode 155 input transmission of control signals TG.During the high level of transmission of control signals TG (hereinafter being also referred to as the H level), in the saturation region or linear zone make 170 conductings of n-MOS transistor, the signal charge that n-diffusion region 130 is stored is transferred to n+ diffusion region 120.N+ diffusion region 120 is connected with power supply potential node 5 by restoring switch 14, and is connected with the input node of voltage amplifier 16.That is, n+ diffusion region 120 is equivalent to the node Nf as floating diffusion region shown in Figure 1.
Like this, utilize n-MOS transistor 170 to constitute transmission gate 12 (Fig. 1), thereby do not establish the contact that contacts on 130 direct physical of n-diffusion region, and can take out the signal charge that n-diffusion region 130 stores.That is, utilize configuration transmission gate 12, can in the baried type diode, use the present invention.In the baried type diode, the storage node (node N1) with signal charge physically directly is not connected with other node, detects so can expect the high precision photoelectric that improves noise immunity.
Then, the action of pixels illustrated circuit 10 and store charge discharging circuit 20.
With reference to Fig. 1, in each image element circuit 10, photodiode PD produces and the corresponding photoelectric current of the incident light of relevant image element circuit 10, according to the generation of this photoelectric current, signal charge (negative electrical charge) is stored into node N1, as signal charge again.
As mentioned above, store charge discharging circuit 20 is brought into play different functions according to the break-make of control switch 24.During connection control switch 24, node N2 (the n+ diffusion region 110 of Fig. 3) is connected with power circuit VDD, thereby discharging is because of the saturated signal charge that overflows from photodiode PD, so store charge discharging circuit 20 is released as each image element circuit 10 shared the overflowing in the same pixel group and a little worked.
On the other hand, store charge discharging circuit 20 is during cut-out control switch 24, the signal charge that the photodiode PD of each image element circuit 10 of storage in the same pixel group overflows, thus node N2 produce with to the corresponding current potential of the incident light quantity of corresponding pixel group.And, during incident intensity (light quantity is big), along with the current potential reduction of node N2, the resistance of charge discharging door DG reduces, thereby 20 execution of store charge discharging circuit are discharged into the signal charge of the node N1 storage of each image element circuit 10 before this time point node N2 " signal charge discharges action ".In contrast, incident light weak (light quantity is little) when the current potential of node N2 does not reduce, is kept big resistance with the resistance of charge discharging door DG, so store charge discharging circuit 20 is not carried out above-mentioned signal charge discharging action.Like this, the signal charge that overflows from each image element circuit 10 is many more, and just the incident light to the pixel group 2 of correspondence is strong more, is easy to generate the charge discharging action of store charge discharging circuit 20 more.That is, store charge discharging circuit 20 moves, and makes node N1 discharging in each image element circuit 10 in the same pixel group and signal charge to the corresponding amount of incident light quantity of relevant pixel group.
In the image element circuit 10, transmission gate 12 according to transmission of control signals TG in the saturation region or linear zone connect, thereby the signal charge that is stored in node N1 in 1 image duration is transferred to node Nf.Node Nf cutting off under the state that restores switch 14, receives the signal charge that also stores transmission gate 12 transmission because of after connect restoring switch 14 and being become power supply potential VDD by precharge.Corresponding to the switching of 1 image duration, the output time that is provided with is connected transmission gate 12 accordingly.
Its result, as the node Nf of floating diffusion region produce with output time described in 1 image duration on be stored in the corresponding current potential of signal charge amount of node N1.Voltage amplifier 16 produces the current potential corresponding output voltage with node Nf, and is connected with output contact No by the pixel selection switch of connecting according to pixel selection control signal PS 18.Thus, output contact No is exported and is stored in this 1 image duration the signal charge amount corresponding output voltage signal Vout of node N1.
As feature of the present invention, by the disengagement phase (during hereinafter being also referred to as charge discharging) that control switch 24 suitably was set in 1 image duration, at incident intensity, the signal charge that makes node N1 is under 1 image duration saturated midway situation, can utilize the signal charge discharging action of store charge discharging circuit 20, the signal charge that stores temporarily is discharged into node N1 midway in 1 image duration.
Then, with Fig. 7 and Fig. 8 the action of the semiconductor camera element of execution mode 1 in 1 image duration is described.
With reference to Fig. 7, set pixel selection control signal PS, restore control signal RF, transmission of control signals TG and control signal RO, regulation constantly is converted to low level (L level) or transfers to the H level from the L level from high level (H level) in each image duration so that produce.
Corresponding to the switching of image duration, pixel selection control signal PS is set at H level specified time limit.During the H level of pixel selection control signal PS in (during the pixel selection), at first, will restore after control signal is set at the H level and removes the signal charge of node Nf, set (between transmission period) during the H level of transmission of control signals TG.In between this transmission period, with the storage assembly charge transfer of the node N1 in this 1 image duration to node Nf, the storage assembly quantity of electric charge corresponding output voltage signal Vout of the node N1 that engraves when producing therewith by voltage amplifier 16.
Again, in 1 image duration, during described pixel selection before, set constantly in regulation (during the charge discharging) during the L level of control signal RO.As indicated above, during the charge discharging in, according to incident light quantity, carry out the charge discharging action of store charge discharging circuit 20 to pixel group.
Fig. 8 schematically illustrates the formation of the potential barrier of moment t0～t6 among Fig. 7 and moving of signal charge.
Among Fig. 8, the longitudinal axis is represented the height of potential barrier.In the transverse axis, W1 is corresponding to the configuring area of overflowing the electric capacity 22 of releasing (node N2), W2 is corresponding to the channel region of charge discharging door DG (n-MOS transistor 160), W3 is corresponding to the configuring area of photodiode PD, W4 is corresponding to the channel region of transmission gate 12 (n-MOS transistor 170), and W5 is corresponding to floating diffusion region (node Nf).
On the t0,, be set at the L level constantly,, be set at the H level control signal RO with pixel selection control signal PS, recovery control signal RF and transmission of control signals TG.Therefore, among Fig. 1, store charge discharging circuit 20 is because control switch 24 is connected, and node N2 a little works as overflowing to release.On the other hand, in the image element circuit 10, cut off transmission gate 12 and reset switch 14, node N1 utilizes the photoelectric current that photodiode PD is produced according to the incident light quantity to image element circuit 10, storage assembly electric charge.Moreover photodiode PD often produces and to the corresponding photoelectric current of the incident light quantity of this image element circuit 10, therefore utilizes the signal charge storage of continuous XM N1 1 image duration to move.
With reference to Fig. 8 (a), on the t0, the district W1 corresponding with node N2 (overflowing the electric capacity 22 of releasing) is biased to power supply potential VDD constantly.Thereby, will discharge because of the saturated signal charge 70 that overflows from photodiode region W3, do not overflow the electric capacity 22 of releasing (district W1) and be not stored in.At this moment, the electromotive force of district W2 (being charge discharging student district) need be set to such an extent that be lower than the builtin voltage at the end of the potential well that forms photodiode PD, so that pull out whole signal charges from photodiode PD (district W3).This is equivalent to the above-mentioned resistance R h of (Vg=Vl) when suitably designing control switch 24 and connect as variable-resistance charge discharging door DG.
Again with reference to Fig. 7,, on the moment t1～t2 of control signal RO by H level transitions Tdr during the charge discharging of L level, cut off control switch 24 in the store charge discharging circuit 20 from the state of moment t0.Therefore, node N2 utilizes and overflows the leakage signal electric charge that the electric capacity 22 of releasing stores from the node N1 of each image element circuit 10.
With reference to Fig. 8 (b), will distinguish W1 (node N2) at moment t1 and disconnect, thereby startup is from the storage of the inflow electric charge of photodiode region W3 (node N1) with power supply potential VDD.
With reference to Fig. 8 (c), overflow vent discharge receiving part W1 (node N2) at moment t2 along with being stored into from the signal charge that photodiode region W3 (node N1) flows into, the electromotive force of charge discharging student district W2 raises.Its result, the resistance that is equivalent to charge discharging door DG reduces, and promotes the signal charge discharging action of the node N1 in each image element circuit 10.
Here, do not squeeze the potential barrier or the potential hole of scolding charge discharging if do not exist among the photodiode PD, and the electromotive force maximum of charge discharging student district W2 is no more than the builtin voltage of photodiode, then can be with the sub-threshold current formula of n-MOS transistor 160 shown in the following formula (1) with the mobility modelization of photodiode region W3 to the signal charge of distinguishing W1 (node N2).But in the formula (1), Id0 represents with following formula (2).
Ids＝Id0·exp{q/(n·k·T)·(Vg-Vs-Vt)}…(1)
Id0＝(W/L)·μn·C0·(k·T/q)·exp(1)…(2)
Moreover in formula (1), the formula (2), q represents elementary charge, and k represents Boltzmann's coefficient, and T represents absolute temperature, and μ n represents charge carrier degree of excursion (electronics), and W and L represent the grid width and the grid length of n-MOS transistor 160.Vs represents photodiode current potential (current potential of node N1), and Vt represents the threshold voltage of n-MOS transistor 160.Moreover N is with coefficient that n=(C0+Cd)/C0 represents with the gate insulating film capacitor C 0 of n-MOS transistor 160 and depletion-layer capacitance Cd.
Like this, in during the charge discharging, the sub-threshold current Ids (being time per unit is discharged into node N2 from node N1 signal charge amount) that n-MOS transistor 160 produces with abide by the output potential Vg of adaptation and conform to the sign-changing amplifier 26 of the current potential of the node N2 of the incident light quantity of pixel group.
Here, if the saturation signal quantity of electric charge among the photodiode PD (node N1) is Q, then according to the circuit constant of capacitance etc., the current potential of the each point when obtaining storage assembly quantity of electric charge Q among the node N1, and can predict in advance by store charge discharging circuit 20 and discharge whole required times of saturation signal quantity of electric charge Q corresponding to the estimated value of at this moment sub-threshold current Ids from node N1.Thereby, can be corresponding to the length during this predicted time setting charge discharging.Can also utilize the setting of control signal RO, be provided with during the charge discharging, therefore not only can establish 1 time in 1 image duration, and can establish repeatedly.
Again with reference to Fig. 7, to constantly between the t3, control signal RO recloses control switch 24 during from the L level transitions to the H level, reproduces the state of t0 constantly at moment t2.Thus, node N1 restarts and storage action to the corresponding signal charge of incident light quantity of image element circuit 10.
With reference to Fig. 8 (d), when Tdr finishes during restarting moment t3 that signal charge stores action, being charge discharging, under the situation of incident intensity, as example, the state that forms utilizes the signal charge discharging action of the store charge discharging circuit 20 among the Tdr during the charge discharging, temporarily removes the signal charge of photodiode region W3 (node N1).On the other hand, though not shown, under the situation a little less than the incident light of pixel group, do not carry out the signal charge discharging action of store charge discharging circuit 20, become the state that the middle former state of photodiode region W3 (node N1) leaves the signal charge that stores so far.Again, in the zone of middle incident light, node N1 leaves the part in the signal charge that stores so far.Like this, during the charge discharging among the Tdr, by store charge discharging circuit 20 from photodiode region W3 (node N1) discharging and signal charge to the corresponding amount of incident light quantity of pixel group.
Again with reference to Fig. 7, in during the pixel selection that pixel selection control signal PS is set at the H level, at first, be set at H level specified time limit by restoring control signal RF, the recovery switch is connected in real time, thereby will be connected (t4 constantly) with power supply potential VDD as the node Nf of floating diffusion region.
Again, between the transmission period that transmission of control signals TG is set at the H level in, connect transmission gate 12, the signal charge that is stored in node N1 before this time point is transferred to node Nf (t5 constantly).Thereafter, transmission of control signals TG recovers the L level, finishes between transmission period, thereby cuts off transmission gate 12 (t6 constantly).Again, pixel selection control signal PS recovers the L level, finish during the pixel selection, thus the release of 1 image duration.
With reference to Fig. 8 (e), on the t4, with the signal that stores among the Tdr posterior nodal point N1 during the charge discharging, electric charge remains on photodiode region W3 (node N1) constantly.On the other hand, floating diffusion region W5 (node Nf) is connected with power supply potential VDD, removes the signal charge that this district stores.
With reference to Fig. 8 (f), constantly on the t5, connect transmission gate 12, thereby the electromotive force of transmission gate inferior segment W4 raises, with relevant 1 image duration to the signal charge that photodiode region W3 (node N1) stores so far, be transferred to floating diffusion region W5 (node Nf).
The signal charge amount of transmission is at incident intensity, carry out fully among the Tdr during the charge discharging under the situation of signal charge discharging action, become the signal charge amount that stores among the Tag (Fig. 7) between the storage life again behind the Tdr during the charge discharging, and a little less than incident light, Tdr does not carry out under the situation of signal charge discharging action during the charge discharging, becomes the signal charge that stores in 1 image duration.
With reference to Fig. 8 (g), on the t6, cut off transmission gate 12 constantly, the electromotive force of transmission gate inferior segment W4 reduces, and therefore the signal charge with photodiode region W3 (node N1) transmission is stored into floating diffusion region W5 (node Nf).Its result, floating diffusion region W5 (node Nf) becomes and the corresponding current potential of at this moment the storage assembly quantity of electric charge (i.e. 1 image duration the node N1 as a result the time the storage assembly quantity of electric charge), and from the current potential corresponding output voltage signal Vout of output node No output and node Nf at this moment.Moreover, on the t6,, temporarily remove the storage assembly electric charge among the photodiode region W3 (node N1) constantly corresponding to the switching of 1 image duration.
As mentioned above, in the semiconductor camera element of execution mode 1, the store charge discharging circuit that utilizes each pixel group to be provided with, to the incident intensity of relevant pixel group the time (when illumination is high), can be in the middle of 1 image duration constantly (during the charge discharging) temporarily discharge the signal charge that each image element circuit stores.Thereby, when illumination is high, can abide by 1 image duration Tfr to from (repeatedly under the situation of She Dinging for during the last charge discharging) end during the charge discharging, to finish between transmission period again between the storage life ratio k=Tfr/Tag of Tag enlarge the dynamic range of each image element circuit.
On the other hand, when (illumination is low), do not carry out the signal charge discharging action of store charge discharging circuit 20 a little less than the incident light to relevant pixel group, do not enlarge the dynamic range in each image element circuit 10, and can guarantee the shooting of contrast.
Its result, utilization is taken as 1 with the sensitization detecting element (photodiode) of configuration in each image element circuit 10, and the simple circuit that the storage capacity of the signal charge that only produces according to this sensitization detecting element is surveyed sensitive volume is formed, dynamic range when expansion illumination is high, even under the big situation of the Luminance Distribution in the visual field, also can detect enough contrasts of bright place and dark place.
Here, in the image element circuit 10, photodiode PD is corresponding to " the 1st sensitization detecting element " of the present invention, and node N1 is corresponding to " the 1st node " of the present invention.Transmission gate 12 restores switch 14 corresponding to " the 2nd initializing circuit " of the present invention corresponding to " the 1st initializing circuit " of the store charge of removing node N1.Voltage amplifier 16 is corresponding to " reading circuit " of the present invention.Moreover configurable this " reading circuit " makes its external unit as image element circuit 10, and be for example shared between a plurality of image element circuits 10.
Again, in the store charge discharging circuit 20, node N2 is corresponding to " the 2nd node " of the present invention, power supply potential node 5 is corresponding to " potential nodes " of the present invention, sign-changing amplifier 26 is corresponding to " CONTROLLED POTENTIAL generating unit " of the present invention, and control switch 24 is corresponding to " control switch element " of the present invention.
Again, among Fig. 3, n-diffusion region 130 is corresponding to " the 1st impurity diffusion zone " of the present invention, and n+ diffusion region 110 is corresponding to " the 2nd impurity diffusion zone " of the present invention.N+ diffusion region 120 is corresponding to " the 3rd impurity diffusion zone " of the present invention.N-MOS transistor 160 is corresponding to " the 1st field-effect transistor " of the present invention, and n-MOS transistor 170 is corresponding to " the 2nd field-effect transistor " of the present invention.
Fig. 9 illustrates the block diagram that the image element circuit of execution mode 1 is become the semiconductor camera element main assembly of the rectangular back execution mode 1 that constitutes with store charge discharging circuit arrangement.
With reference to Fig. 9, the semiconductor camera element 200 of execution mode comprises: receive the store charge discharging circuit 20, control signal generation circuit 210, the voltage latch circuit 220 that are arranged in rectangular a plurality of image element circuits 10, pixel group configuration that each is made of each adjacent on line direction and the column direction 4 image element circuit 10 on the photosurface of incident light, extend the holding wire 230 of ground configuration and the data wire 240 that extends the ground configuration toward column direction toward line direction.
Control signal generation circuit 210 according to the output of the vertical transfer register (not shown) of the scanning of carrying out vertical direction (column direction) 1 image duration accordingly, produce the control signal group who comprises pixel selection control signal PS, restores control signal RF, transmission of control signals TG and control signal RO with pixel behavior unit.
Produce the control signal group that circuit 210 produces by holding wire 230 transfer control signal, its each image element circuit 10 and each store charge that is taken in the same pixel column is discharged circuit 20.
Each pixel column is provided with data wire 240, and it is connected with the output contact No of each image element circuit 10 in the corresponding pixel column.Voltage latch circuit 220 is connected with each data wire 240, output according to the horizontal shifting register (not shown) of executive level direction (line direction) scanning, voltage on the readout data signal line 240 successively, thus output voltage signal Vout can be obtained according to the scanning sequency of image element circuit 10 successively from each image element circuit 10.Thus, can obtain the serial data signal Vdat of serial arrangement according to the scanning sequency of image element circuit 10 from the output voltage signal Vout of each image element circuit 10.
Moreover present embodiment is such, and the image element circuit that belongs to same pixel group is crossed under the situation of a plurality of (2) pixel column, engraves setting control signal group in preferably corresponding with same pixel group a plurality of (2) pixel column when common.In the case, be subordinated to a plurality of (2) image element circuit 10 output output voltage signal Vout of same pixel group, therefore need institute to get to read to form many (2) data wires 240 of each pixel column configuration, and a plurality of (2) image element circuit 10 that will belong to same pixel group is connected with the data wire 240 of configuration many (2) respectively.Thus, can carry out precision higher read action.
Moreover in the property the confirmed ground notebook execution mode, the composition of the taking-up usefulness of the scanning of each image element circuit 10 and output voltage signal is not limited to the example of Fig. 9, can suitably use the known any means of this area business personnel.Also can relate to the pixel column of any amount and the pixel group that pixel column ground constitutes shared store charge discharging circuit 20.
(the conversion example of execution mode 1)
As shown in figure 10, the image element circuit 10 of Fig. 1 is replaced as image element circuit 11 also can be by the 11 shared store charges discharging circuit 20 of a plurality of image element circuits in the same pixel group, and the identical semiconductor camera element of formation and execution mode 1.
With reference to Figure 10, image element circuit 11 is compared with image element circuit 10 shown in Figure 1, difference aspect omission transmission gate 12.That is, will restore switch 14 and connect into directly node N1 is restored, and the input node of voltage amplifier 16 directly will be connected with node N1.
Thereby image element circuit 11 is not in the structure shown in Figure 6 photodiode PD to be defined as the baried type diode, can constitute in the mode as common pn junction diode.In the case, n type diffusion region that will be corresponding with node N1 is arranged on the first type surface of p type silicon chip 100, so can form the contact to the contact of node N1 direct physical.Therefore, omit the configuration of the transmission gate 12 (the n-MOS transistor 170 among Fig. 6) among Fig. 1 in each image element circuit 11, also can constitute the semiconductor camera element identical with execution mode 1.
That is, in the image element circuit 11, restore switch 14, do not dispose " the 2nd initializing circuit " of the present invention corresponding to " the 1st initializing circuit " of the present invention.
The action of 1 image duration of semiconductor camera element of the conversion example of the execution mode 1 of using image element circuit 11 then, is described with Figure 11.
With reference to Figure 11, the semiconductor camera element of the conversion example of execution mode 1 and execution mode 1 (Fig. 7) are similarly set control signal RO, and with Fig. 7 in the moment t5 moment corresponding pixel selection control signal PS is set at the H level.Then, according to corresponding to the mode of switching for 1 image duration, the end of (during the H level of pixel selection control signal RS) during the pixel selection is responded, when start 1 new image duration, will restore control signal RF and be set at the H level.Thus, can when start each image duration, remove the storage assembly electric charge of node N1.
In 1 image duration, the output voltage of the current potential of node N1 and voltage amplifier 16 constantly changes with the signal charge storage capacity among the node N1, but by during the L level that control signal RO was set in 1 image duration (during the charge discharging) midway, and suitably carry out the charge discharging action of store charge discharging circuit 20, can produce the output voltage signal Vout identical by image element circuit 11 with execution mode 1.
Figure 12 is the circuit diagram of the composition of image element circuit in the semiconductor camera element of explanation execution mode 2 and store charge discharging circuit.
With reference to Figure 12, in the semiconductor camera element of execution mode 2, store charge discharging circuit 21 is set, to replace the store charge discharging circuit 20 of execution mode 1.
Store charge discharging circuit 21 has the circuit composition that disposes in the store charge discharging circuit 20 shown in Figure 1 as the photodiode PD# of " the 2nd sensitization detecting element " between node N2 and ground connection node 6.
Figure 13 is the cutaway view of structure that the crucial portion of the store charge discharging circuit 21 corresponding with the crucial portion cutaway view of store charge shown in Figure 3 discharging circuit 20 is shown.Can understand from the comparison of Figure 13 and Fig. 3, store charge discharging circuit 21 has and omits the structure that is arranged on as the configuration of the anti-dazzling screen 115 of the first type surface side of overflowing the n+ diffusion region 110 of a little working of releasing.Thus, formation is anode, is the photodiode PD# of negative electrode with the n+ diffusion region with the p type silicon chip 100 that is offset to earthing potential VSS.Discharge the The Nomenclature Composition and Structure of Complexes of the other parts of circuit 21 about store charge,, do not repeat to describe in detail because identical with store charge discharging circuit 20.
With execution mode 1 similarly each pixel group store charge discharging circuit 21 is set, and its each node N1 by the image element circuit 10 that comprises in charge discharging door DG and the same pixel group is electrically connected.
Again with reference to Figure 12, store charge discharging circuit 21 during the connection of control switch 24 in, n+ diffusion region 110 is offset to power supply potential VDD, thus identical with the store charge discharging circuit 20 of execution mode 1, also a little work as overflowing to release.On the other hand, cut off control switch 24 during in (during the charge discharging), can produce and the corresponding photoelectric current of the incident light that store charge is discharged circuit 21 incident light quantity of relevant pixel group (promptly to) by photodiode PD#, and, signal charge is stored into node N2 along with the generation of photoelectric current.
At this moment, identical with the layout of Fig. 2 example, in the district that the image element circuit that belongs to same pixel group surrounds, it is equidistant in fact that node N2 (being photodiode PD#) is arranged to leave each image element circuit, thereby can utilize directly exposure, by photodiode PD# produce with this pixel group in the corresponding photoelectric current of average incident light quantity.
Thus, store charge discharging circuit 21 during charge discharging in, node N2 is stored the signal charge that similarly overflows from each image element circuit 10 with execution mode 1, store the signal charge that photodiode PD# produces in addition.Therefore, store charge discharging circuit 21 easy storage assembly electric charges are easy to generate the signal charge discharging action of node N1, and can improve the mass rate of emission of signal charge.
Its result obtains same dynamic range and shortens relatively 1 required image duration when making illumination high, therefore can carry out the shooting of further high speed.
Perhaps, can make on the principle institute's composition of getting during charge discharging in, only the current potential of the sensitive volume Control Node N2 that detects according to photodiode PD#, be the resistance of charge discharging door DG.In this composition, can be by the charge discharging portion (not shown) that discharging is used from the signal charge of the node N1 of each image element circuit 10 being set separately at store charge discharging circuit 21, each charge discharging door DG is disconnected from node N2, and be connected between the node N1 in relevant charge discharging mouth and each image element circuit 10.
Again, in the semiconductor camera element of execution mode 2, to image element circuit 10 also can with image element circuit 11 displacements shown in the conversion example of execution mode 1.That is, by with image element circuit 10 or 11 and the store charge of execution mode 2 discharging circuit 21 for example Fig. 9 dispose like that, can constitute the semiconductor camera element of execution mode 2.
Execution mode 3
Above such, packed- pixel circuit 10 or 11 and store charge discharging circuit 20 or 21 can constitute the semiconductor camera element of embodiment of the present invention.Here, execution mode 1 and 2 examples are formed the circuit that the anode of photodiode PD is fixed in earthing potential VSS, form but also can be taken as with the polarity upset in each circuit and with the circuit that the negative electrode of photodiode PD is fixed in power supply potential VDD.
Figure 14 and Figure 15 illustrate image element circuit 10# and the 11# as the execution mode 3 of the conversion example of the polarity of overturn respectively image element circuit 10 and 11 respectively.
Among image element circuit 10# and the 11#, be taken as the composition that the negative electrode with photodiode PD is connected with power supply potential node 5, compare with 11, change being connected node N1 respectively and the configuration of the circuit element between power supply potential node 5 and the ground connection node 6 with image element circuit 10.Moreover among image element circuit 10# and the 11#, node N1 is corresponding to the anode of photodiode, and therefore the signal charge that stores is a positive charge.
Figure 16 and Figure 17 illustrate store charge discharging circuit 20# and the 21# as the execution mode 3 of the conversion example of the polarity of overturn respectively store charge discharging circuit 20 and 21.Among store charge discharging circuit 20# and the 21#, compare with 21, change and be connected node N1 respectively and the configuration of the circuit element between power supply potential node 5 and the ground connection node 6 with store charge discharging circuit 20.
Also between the node N2 among node N1 in each image element circuit 10# (or 11#) and the store charge discharging circuit 20# (or 21#), connect the charge discharging door DG# that uses from node N1 discharging positive charge, to replace charge discharging door DG.Make on the contrary with charge discharging door DG on the charge discharging door DG# structure, along with the output potential Vg of sign-changing amplifier 26 reduces (current potential that is node N2 raises), resistance reduces, and along with output potential Vg raises, resistance strengthens.
Can constitute image element circuit 10#, 11# and store charge discharging circuit 20#, 21# by the conductivity type of in Fig. 6 or Figure 13, suitably overturn n type and p type.That is, constitute transmission gate 12 by the p-MOS transistor among image element circuit 10#, the 11#, utilize the p-MOS transistor to constitute charge discharging door DG among store charge discharging circuit 20#, the 21#.
The action of image element circuit 10#, 11# and store charge discharging circuit 20#, 21# is identical with store charge discharging circuit 20,21 with image element circuit 10,11 with function, does not therefore repeat to describe in detail.That is, utilize the combination of image element circuit 10# or 11# and store charge discharging circuit 20# or 21#, also can constitute the semiconductor camera element of embodiment of the present invention.But, because the degree of excursion of positive charge (positive hole) is less than the degree of excursion of negative electrical charge (electronics), therefore the semiconductor camera element that constitutes by image element circuit 10,11 and store charge discharging circuit 20,21 with compare with the semiconductor camera element that store charge discharging circuit 20#, 21# constitute by image element circuit 10#, 11#, favourable aspect high-speed camera.
Should think the execution mode of existing announcement, its all be example, and unrestricted.Scope of the present invention is represented by claims, but not above-mentioned explanation; Comprise and the implication of claims equalization and the contact transformation in the scope.
Industrial practicality
As mentioned above, semiconductor camera element of the present invention is as the shooting with high visual detection ability Element can use under various situations, can be used for comprising that outdoor supervision is with camera or in-vehicle camera etc. Again, Because easy the electric circuit constitute can dwindle pixel scale, therefore be fit to many pixelations, and be fit to be loaded into just Take equipment.
Claims (10)
1, a kind of semiconductor camera element is characterized in that, comprising:
Be divided into a plurality of image element circuits of a plurality of pixel groups; And
Be arranged on the store charge discharging circuit of each described pixel group,
Each described pixel group comprises a plurality of described image element circuits,
Each described image element circuit comprises
Be used to produce and the 1st sensitization detecting element to the corresponding signal charge of incident light quantity of described image element circuit;
Store the 1st node described signal charge, regulation electric capacity that described the 1st sensitization detecting element produces; And
Be used for removing the 1st initializing circuit of the described signal charge of described the 1st node storage corresponding to the switching of image duration,
In making during the predefined charge discharging of the regulation moment in described image duration on the described store charge discharging circuit structure by each, according to incident light quantity to the described pixel group of correspondence, the signal charge discharging action that execution makes described signal charge flow out from described the 1st node
Become big mode according to the signal charge amount of the time per unit that flows out from described the 1st node greatly and relatively with the incident light quantitative change of described pixel group to correspondence, carry out described signal charge discharging action,
Described semiconductor camera element also comprises
Do being paired in each described image element circuit in each described image duration on the structure, the reading circuit of the corresponding signal of telecommunication of described signal charge amount that described the 1st node of output and the output time of setting constantly by the regulation after during the described charge discharging stores.
2, semiconductor camera element as claimed in claim 1 is characterized in that,
Described store charge discharging circuit comprises
Have and make 2nd node of storage on the structure because of the regulation electric capacity of the described signal charge of saturated described the 1st node outflow from described a plurality of image element circuits that relevant pixel group comprises of described signal charge of described the 1st node;
The CONTROLLED POTENTIAL generating unit of the CONTROLLED POTENTIAL that generation changes with the current potential of described the 2nd node;
Supply is used to attract the potential nodes of the regulation current potential of described signal charge;
Be arranged between this potential nodes and described the 2nd node, and during described charge discharging, cut off and the control switch element during non-described charge discharging, connected; And
Be connected between each described the 1st node and described the 2nd node in this pixel group, control the charge discharging door of size of discharging electric current that flows out to the described signal charge of described the 2nd node from each described the 1st node according to described CONTROLLED POTENTIAL,
In making during described charge discharging on the described charge discharging door, because of the potential change based on described the 2nd node of the storage capacity of the described signal charge of described the 2nd node changes described CONTROLLED POTENTIAL, increase described discharging electric current according to the variation of this CONTROLLED POTENTIAL.
3, semiconductor camera element as claimed in claim 1 is characterized in that,
Described store charge discharging circuit comprises
Produce and the 2nd sensitization detecting element of using to the corresponding signal charge of the incident light quantity of described image element circuit;
Have and make the two the 2nd node of regulation electric capacity of described signal charge that described signal charge that storage flows out because of saturated described the 1st node from described a plurality of image element circuits that relevant pixel group comprises of the described signal charge of described the 1st node and described the 2nd sensitization detecting element produce on the structure;
The CONTROLLED POTENTIAL generating unit of the CONTROLLED POTENTIAL that generation changes with the current potential of described the 2nd node;
Supply is used to attract the potential nodes of the regulation current potential of described signal charge;
Be arranged between this potential nodes and described the 2nd node, and during described charge discharging, cut off and the control switch element during non-described charge discharging, connected; And
Be connected between each described the 1st node and described the 2nd node in this pixel group, control the charge discharging door of size of discharging electric current that flows out to the described signal charge of described the 2nd node from each described the 1st node according to described CONTROLLED POTENTIAL,
In making during described charge discharging on the described charge discharging door, because of the potential change based on described the 2nd node of the storage capacity of the described signal charge of described the 2nd node changes described CONTROLLED POTENTIAL, increase described discharging electric current according to the variation of this CONTROLLED POTENTIAL.
4, semiconductor camera element as claimed in claim 1 is characterized in that, also comprises:
Produce and the 2nd sensitization detecting element of using to the corresponding signal charge of the incident light quantity of described image element circuit;
The 2nd node with regulation electric capacity of making the described signal charge that stores described the 2nd sensitization detecting element generation on the structure;
The CONTROLLED POTENTIAL generating unit of the CONTROLLED POTENTIAL that generation changes with the current potential of described the 2nd node;
Supply is used to attract the potential nodes of the regulation current potential of described signal charge;
Be arranged between this potential nodes and described the 2nd node, and during described charge discharging, cut off and the control switch element during non-described charge discharging, connected; And
Be connected between each described the 1st node and described the 2nd node in this pixel group, control the charge discharging door of size of discharging electric current that flows to the described signal charge of described the 2nd node from each described the 1st node according to described CONTROLLED POTENTIAL,
In making during described charge discharging on the described charge discharging door, because of the potential change based on described the 2nd node of the storage capacity of the described signal charge of described the 2nd node changes described CONTROLLED POTENTIAL, increase described discharging electric current according to the variation of this CONTROLLED POTENTIAL.
5, as each described semiconductor camera element in the claim 2 to 4, it is characterized in that,
Described charge discharging door is that resistance refers to the variable resistor element that changes with the described CONTROLLED POTENTIAL from described CONTROLLED POTENTIAL generating unit,
Making described resistance value on the described variable resistor element structure reduces with the variation of the described CONTROLLED POTENTIAL corresponding with the increase of the described signal charge storage capacity of described the 2nd node.
6, as each described semiconductor camera element in the claim 2 to 4, it is characterized in that,
Described charge discharging door comprises the 1st field-effect transistor, and the 1st field-effect transistor is a source electrode with the 1st impurity diffusion zone that constitutes described the 1st node, and is drain electrode with the 2nd impurity diffusion zone that constitutes described the 2nd node,
Described CONTROLLED POTENTIAL generating unit produces described CONTROLLED POTENTIAL, and outputs to the grid of described the 1st field-effect transistor, makes that the channel resistance between described source electrode and the described drain electrode reduces with the increase of the described signal charge storage capacity of described the 2nd node;
Each described image element circuit also comprises
Thereby make on the structure described output time in the saturation region or linear zone conducting described signal charge that described the 1st impurity diffusion zone is stored be sent to the 2nd field-effect transistor of the 3rd impurity diffusion zone; And
Be used in same described image duration, before described the 2nd field-effect transistor conducting, removing the 2nd initializing circuit of the described signal charge in described the 3rd impurity diffusion zone,
Make the corresponding described signal of telecommunication of described signal charge amount of described the 3rd impurity diffusion zone storage of output and described output time on the described reading circuit structure.
7, as each described semiconductor camera element in the claim 1 to 4, it is characterized in that,
Described store charge discharging circuit is formed in the plane that receives described incident light in described a plurality of image element circuit area surrounded that the described pixel group by correspondence comprises.
8, semiconductor camera element as claimed in claim 1 is characterized in that,
Described store charge discharging circuit is to the incident light quantity of the described pixel group of described correspondence hour, do not carry out the described signal charge discharging action during the described charge discharging.
9, semiconductor camera element as claimed in claim 1 is characterized in that,
Described store charge discharging circuit comprises
Be used for when the described signal charge discharging of execution action, receiving from the 2nd node of the described signal charge of the 1st node outflow; And
Be connected between each described the 1st node and described the 2nd node in the relevant pixel group, and flow out to the charge discharging door of size of discharging electric current of the described signal charge of described the 2nd node in during described charge discharging from each described the 1st node according to incident light quantity control to the pixel group of described correspondence
Making described discharging electric current on the described charge discharging door increases greatly with the incident light quantitative change to the pixel group of described correspondence.
10, semiconductor camera element as claimed in claim 9 is characterized in that,
The described charge discharging door variable resistor element that to be resistance value change with the incident light quantity to the pixel group of described correspondence,
Making described resistance value on the described variable resistor element structure reduces greatly with the incident light quantitative change to the pixel group of described correspondence.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP132957/2006 | 2006-05-11 | ||
| JP2006132957A JP3996618B1 (en) | 2006-05-11 | 2006-05-11 | Semiconductor image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101444085A true CN101444085A (en) | 2009-05-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2007800170049A Pending CN101444085A (en) | 2006-05-11 | 2007-05-08 | Semiconductor image sensing device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090101914A1 (en) |
| EP (1) | EP2023613A4 (en) |
| JP (1) | JP3996618B1 (en) |
| CN (1) | CN101444085A (en) |
| RU (1) | RU2427974C2 (en) |
| TW (1) | TW200807703A (en) |
| WO (1) | WO2007132695A1 (en) |
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- 2007-05-08 RU RU2008148834/09A patent/RU2427974C2/en not_active IP Right Cessation
- 2007-05-08 EP EP07742925A patent/EP2023613A4/en not_active Withdrawn
- 2007-05-08 WO PCT/JP2007/059490 patent/WO2007132695A1/en active Application Filing
- 2007-05-08 US US12/227,159 patent/US20090101914A1/en not_active Abandoned
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| CN110225269B (en) * | 2015-08-26 | 2022-03-25 | 意法半导体国际有限公司 | Image sensor device with macropixel processing and related devices and methods |
| WO2018165832A1 (en) * | 2017-03-13 | 2018-09-20 | Huawei Technologies Co., Ltd. | Cmos image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2023613A4 (en) | 2010-05-05 |
| EP2023613A1 (en) | 2009-02-11 |
| TW200807703A (en) | 2008-02-01 |
| RU2427974C2 (en) | 2011-08-27 |
| RU2008148834A (en) | 2010-06-20 |
| JP3996618B1 (en) | 2007-10-24 |
| WO2007132695A1 (en) | 2007-11-22 |
| JP2007306334A (en) | 2007-11-22 |
| US20090101914A1 (en) | 2009-04-23 |
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