CN101359924B - 射频集成电路以及收发切换器 - Google Patents

射频集成电路以及收发切换器 Download PDF

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CN101359924B
CN101359924B CN2007101870806A CN200710187080A CN101359924B CN 101359924 B CN101359924 B CN 101359924B CN 2007101870806 A CN2007101870806 A CN 2007101870806A CN 200710187080 A CN200710187080 A CN 200710187080A CN 101359924 B CN101359924 B CN 101359924B
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克里斯多佛·休
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Mediatek (usa) Ltd By Share Ltd
MediaTek USA Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/211—Indexing scheme relating to amplifiers the input of an amplifier can be attenuated by a continuously controlled transistor attenuator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7239—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)

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Abstract

本发明提供了一种射频收发切换器。收发切换器包括：阻抗匹配电路以及电压调整电路。阻抗匹配电路，用以匹配低噪声放大器的输入射频信号以及功率放大器的输出射频信号。电压调整电路耦接于阻抗匹配电路、功率放大器、以及低噪声放大器，电压调整电路在传送输出射频信号期间，将输出射频信号减弱为调整信号，调整信号的电压位于低噪声放大器的晶体管装置的崩溃电压范围内。本发明提供的射频集成电路以及收发切换器，通过电压调整电路来阻止氧化物崩溃，可以提高系统的稳定性，另外，可以使用单一的电感器来提供阻抗匹配，增强了电路效能，降低了制造成本以及电路复杂度。

Description

射频集成电路以及收发切换器
技术领域
本发明是关于无线通信技术，特别是关于一种用于无线通信系统中的射频集成电路以及收发切换器。
背景技术
在半双工通信系统中，在任何时间，传送器以及接收器中只有一个是开启的。这样的系统通常采用一个单一的天线以及一个收发切换器，其中收发切换器用于选择传送路径或接收路径。
通信系统支持在特定通信装置之间的无线以及有线通信。这样的通信系统可用于国内及/或国际无线电话系统、因特网、点对点家用无线网络中。每种类型的通信系统都符合一种或多种通信标准。例如，无线通信系统可以依照一种或多种标准来运作，标准包括但不限于以下标准，电气电子工程师协会802.11标准，蓝牙标准，先进移动电话服务(advanced mobile phone services，以下简称为AMPS)标准，数字AMPS标准，全球移动通信系统标准，码分多址(code division multiple access，CDMA)标准，本地多点分配系统(localmulti-point distribution systems，LMDS)标准，多路多点分配系统(multi-channel-multi-point distribution systems，MMDS)标准等等。
对于无线通信系统中的每一个无线通信装置来说，无线收发器(也就是，接收器以及传送器)被内嵌于或耦接于相关的无线收发器(例如，用于家用及/或建筑物内无线通信网路的基站，射频调制解调器等)。在很多射频收发器中，接收器以及传送器工作于半双工模式，因此接收器以及传送器共享天线。为了方便天线的共享，射频收发器包括一个收发切换器，收发切换器位于传送以及接收部分的芯片外。
一种相关技术的收发切换器包括：阻抗匹配电路，用以提供最小的阻抗以使输入信号及输出信号的损耗降到最低。但是，因为阻抗匹配电路同时连接于传送器以及接收器，且传送器以及接收器通常采用不同厚度的晶体管装置，且消耗的电量也不同，当高电压摆幅耦合至具有薄氧化物的晶体管装置时，收发切换器将出现稳定性问题，会导致氧化物崩溃以及电路失效。
因此，需要一种可以提高电路的稳定性的收发切换器。
发明内容
为提高系统的稳定性，本发明提供了一种射频集成电路以及收发切换器。
本发明提供了一种射频集成电路，包括：传送器模块、接收器模块、收发切换器。传送器模块，用以将输出基频信号转换为输出射频信号，包括用于传送该输出射频信号的功率放大器。接收器模块，用以将输入射频信号转换为输入基频信号，包括用以接收该输入射频信号的低噪声放大器。收发切换器，耦接于功率放大器以及低噪声放大器，包括：阻抗匹配电路，耦接于功率放大器以及低噪声放大器，用于对输入射频信号以及输出射频信号进行阻抗匹配；以及电压调整电路，耦接于阻抗匹配电路、功率放大器、以及低噪声放大器，用于将输出射频信号减弱为调整信号，其中调整信号的电压位于低噪声放大器的晶体管的崩溃电压范围内。
本发明提供了一种收发切换器，耦接于射频集成电路的功率放大器以及低噪声放大器，包括：阻抗匹配电路，为低噪声放大器的输入射频信号以及功率放大器的输出射频信号提供阻抗匹配；以及电压调整电路，耦接于阻抗匹配电路，功率放大器，以及低噪声放大器，将输出射频信号减弱为调整信号，其中调整信号的电压位于低噪声放大器的晶体管的崩溃电压范围内。
本发明提供的射频集成电路以及收发切换器，通过电压调整电路来阻止氧化物崩溃，可以提高系统的稳定性，另外，可以使用单一的电感器来提供阻抗匹配，以增强电路效能，降低了制造成本以及电路复杂度。
附图说明
图1为本发明一实施例的无线通信系统的方框图。
图2为图1所示的无线通信装置的收发器的方框图。
图3为本发明一实施例的收发切换器模块的方框图。
图4为本发明一实施例的收发切换器模块的电路示意图。
图5为本发明另一实施例的收发切换器模块的电路示意图。
图6为本发明另一实施例的收发切换器模块的电路示意图。
图7为本发明另一实施例的收发切换器模块的电路示意图。
具体实施方式
图1为本发明一实施例的无线通信系统的方框图。无线通信系统包括基站/接入点100，国内/国际网络102，笔记本电脑120，移动电话122，个人数字助理124，以及个人电脑126。国内/国际网络102耦接于基站/接入点100，笔记本电脑120，移动电话122，个人数字助理124，以及个人电脑126。
基站/接入点100通过国内/国际网络102存取数据，国内/国际网络102可以是国内网络(例如，局域网)，或国际网络(例如，因特网)。基站/接入点100包括天线，天线是用于与其覆盖范围内的无线通信装置(包括：笔记本电脑120，移动电话122，个人数字助理124，以及个人电脑126)进行通信。
通常，基站被使用于移动电话系统，例如全球移动通信系统或宽带码分多址系统，以及接入点被用于无线局域网。每个无线通信装置包括耦接于天线的传送器及接收器以与基站/接入点100进行通信，其中，天线可以是内嵌的或外加的。在半双工通信系统中，传送器或接收器是开启的。收发切换器用于在传送器与接收器之间作选择。无线通信装置可以由一个或多个集成电路来实施。
虽然图1所示为间接的通信系统，但是点对点的直接通信也在本发明所揭示的范围内，任何所属技术领域中的技术人员，在不脱离本发明的范围内，可以做一些改动。
图2为图1所示的无线通信装置的收发器的方框图，收发器包括：天线20，收发切换器22，低噪声放大器(low noise amplifier，以下简称为LNA)24，功率放大器(power amplifier，以下简称为PA)26，降转换器28，以及升转换器29。天线20耦接于收发切换器22、LNA 24、PA26、降转换器28、以及升转换器29。
收发切换器22将天线20连接到传送路径或接收路径。在传送路径中，升转换器29以本地振荡器(未显示)的本地振荡信号来调制主机装置(未显示)输出的输出数据，以提供输出射频信号，输出射频信号通过PA 26被放大，接着传送到天线20以经由收发切换器22传送到无线媒体。输出数据可以是基频或中频信号。于接收路径，天线20从无线媒体中接收输入射频信号，并经由收发切换器22传送到LNA24，输入射频信号在LNA24中被放大，且降转换器28根据本地振荡器(未显示)的本地振荡信号来解调被放大的输入射频信号以产生输入数据。输入数据可以是基频或中频信号。
PA26使用厚氧化物装置并需要高电量供应以产生大信号摆幅，来补偿传送过程中的传送损耗，但是LNA24使用薄氧化物装置以及低电量供应来传送低噪声输出。因为大信号可能会导致薄氧化物中的氧化物崩溃，因此需要防止功率放大器的大信号摆幅造成的薄氧化物崩溃。
以上所揭示的收发器被集成于单一的射频集成电路(radio frequencyintegrated circuit)以增加效率，降低制造成本以及减少电路的尺寸及复杂度。
图3为本发明一实施例的收发切换器模块的方框图，收发切换器模块包括天线32，收发切换器30，PA34，以及LNA36。天线32耦接于收发切换器30、PA34、以及LNA36。收发切换器30包括阻抗匹配电路300以及电压调整电路302。天线32耦接于阻抗匹配电路300，以及电压调整电路302。
天线32与远程收发器(例如，基站，接入点，或笔记本电脑等)通信，传送来自PA34的输出射频信号，以及接收输入射频信号，通过收发切换器30将输入射频信号传送至LNA36。
PA34放大输出信号以产生经由天线32传送的输出射频信号。LNA36接收输入射频信号，并为后续的处理增加输入射频信号的强度。其运作过程如下，第一开关SW1在传送输出射频信号的过程中开启PA34，以及接收输入射频信号的过程中关闭PA34。相反的，第二开关SW2在接收输入射频信号的过程中开启LNA36，在传送输出射频信号的过程中关闭LNA36。第一开关SW1以及第二开关SW2可以通过晶体管或其它方式来实施。PA34通过厚氧化物装置来实施以传递更高的电量，但是，LNA36利用薄氧化物装置以获得高增益以及低噪声。为了适应于不同的氧化物厚度，PA34使用的电压高于LNA36使用的电压，也就是，VDD-PA高于VDD-LNA。因为厚氧化物与薄氧化物装置被集成于一个射频集成电路，在厚氧化物装置具有高电压摆幅期间，可能会发生薄氧化物的氧化物崩溃的情况。
收发切换器30包括阻抗匹配电路300以及电压调整电路302，其中阻抗匹配电路300耦接于电压调整电路302。阻抗匹配电路300耦接于PA34，LNA36，为输入射频信号以及输出射频信号提供输入阻抗匹配以及输出阻抗匹配，减少了在运作过程中由于阻抗不匹配而导致的损耗。电压调整电路302耦接于PA34以及LNA36，以及在传送输出射频信号的过程中，在薄氧化物装置的崩溃电压范围内，将输出射频信号减弱为调整信号，因此可以阻止LNA36中的氧化物崩溃。接收输入射频信号的过程中，电压调整电路302被关闭，输入射频信号直接被传送到LNA36，为LNA36的输入提供了低阻抗路径。
图4为本发明一实施例的收发切换器模块的电路示意图，收发切换器模块包括天线32，阻抗匹配电路300，电压调整电路302，PA34以及LNA36。
天线32，PA34，以及LNA36的运作与图3所揭示的收发切换器模块中的天线32，PA34，以及LNA36的运作相同，因此不再详细描述。
阻抗匹配电路300包括电感器L1以及电容器C3。电压调整电路302包括电容器C1，电容器C2，以及N型金属氧化物半导体晶体管M1。电容器C1以及电容器C2串联连接以组成分压器，以将电容器C1的输入信号减弱为调整信号，调整信号被输入到LNA36。分压器的调整因素是通过电容器C1以及C2的比值来决定的。N型金属氧化物半导体晶体管M1对分压器进行控制，当N型金属氧化物半导体晶体管M1开启时，分压器开启，以及当N型金属氧化物半导体晶体管M1关闭时，分压器关闭。其运作过程如下，当PA34传送输出射频信号时，N型金属氧化物半导体晶体管工作于非饱和区，依次将电容器C2接地以及开启分压器，以使输出射频信号减弱为小于LNA36中薄氧化物的崩溃电压。串联组合的电容器C1以及C2也可滤除传送射频信号的谐波。当LNA36接收输入射频信号时，N型金属氧化物半导体晶体管M1关闭，依次断开电容器C2与地的连接以及关闭分压器，以使输入射频信号通过电容器C1耦接于LNA36。电容器C1具有低阻抗以减少输入射频信号的传送损耗。
图4所示的收发切换器使用电压调整电路302来阻止氧化物崩溃，因此可以提高系统的稳定性。另外，本实施例仅使用了一个电感器，并且完全兼容于互补式金属氧化物半导体，因此降低了制造成本以及电路复杂度。
图5为本发明另一实施例的收发切换器模块的电路示意图，收发切换器模块包括天线32，阻抗匹配电路300，PA34，以及电压调整电路以及LNA50。
图3以及图4对天线32，PA34以及输入阻抗电路300进行了详细描述。在本实施例中，如图5所示的收发切换器模块使用了电压调整电路以及自保护的LNA50，包括电容器C1，电阻器R1，N型金属氧化物半导体晶体管M1，N型金属氧化物半导体晶体管M2，N型金属氧化物半导体晶体管M3，以及负载Z1。电容器C1，电阻器R1，N型金属氧化物半导体晶体管M1，N型金属氧化物半导体晶体管M2作为电压调整电路，以及N型金属氧化物半导体晶体管M1，N型金属氧化物半导体晶体管M3以及负载Z1作为具有串级结构的LNA。N型金属氧化物半导体晶体管M2在同一时间仅能被电压调整电路以及LNA中的一者使用。例如，当N型金属氧化物半导体晶体管M2导通时，N型金属氧化物半导体晶体管M1的漏极分路到地，N型金属氧化物半导体晶体管M3关闭，以及N型金属氧化物半导体晶体管M1作为金属氧化物半导体电容器，导致电压调整电路开启且LNA关闭。当N型金属氧化物半导体晶体管M2截止时，N型金属氧化物半导体晶体管M1以及M3在饱和区截止，导致电压调整电路关闭且LNA开启。其运作过程如下，在传送模式中，开关SWrx开启晶体管M2，因此串级LNA关闭以及电压调整电路开启，可以保护LNA的输入不受PA34的高电压摆幅的影响。在接收模式中，开关SWrx关闭晶体管M2以使串级LNA接收输入射频信号。串级LNA通过电容器C1接收输入射频信号，阻止高电压VDD-PA。
图5所示的收发切换器模块利用电压调整电路以及LNA50来阻止氧化物崩溃，单一的电感器用于提供阻抗匹配，以及完全兼容于互补式金属氧化物半导体，因此增加了电路效率，降低了制造成本以及电路复杂度。
图6为本发明另一实施例的收发切换器模块的电路示意图，收发切换器模块包括天线32，阻抗匹配电路300，PA34，以及电压调整电路以及LNA60。
图3以及图4对天线32，PA34以及输入阻抗电路300进行了详细描述。在本实施例中，如图6所示的收发切换器模块利用了独特的电压调整电路以及LNA60来阻止氧化物崩溃以及提供适应性的增益控制。如图6所示的收发切换器模块用于为输入射频信号提供适应性的增益。
电压调整电路以及LNA60包括高增益路径以及低增益路径，高增益路径以比低增益路径高的增益来放大输入射频信号。电压调整电路以及LNA60包括N型金属氧化物半导体晶体管M1-M5，电容器C1，电容器C2，电阻器R1以及负载Z1。图6所示的LNA60在图5所示的LNA50的基础上提供了低增益路径。N型金属氧化物半导体晶体管M5以及电容器C2组成了低增益路径。电容器C1以及电容器C2作为电压调整电路，以及N型金属氧化物半导体晶体管M5作为可提供低增益路径的LNA。N型金属氧化物半导体晶体管M4以及N型金属氧化物半导体晶体管M2在同一时间只能被电压调整电路以及LNA中的一个使用。以上已经对M2的运作作了详细描述。在传送模式，开关SWrx开启N型金属氧化物半导体晶体管M4以关闭N型金属氧化物半导体晶体管M5，以及电容器C2分路到地且与作为金属氧化物半导体电容器的N型金属氧化物半导体晶体管M1并联。电容器C2以及N型金属氧化物半导体晶体管M1结合所形成的电容比图5中所示的情况有了很大的增加，因此PA34的高电压摆幅被更大幅度的降低，可以保护LNA的输入不受PA34的高电压摆幅的影响。在接收模式中，开关SWrx关闭N型金属氧化物半导体晶体管M4来开启LNA的低增益路径，以接收输入射频信号。
另外，本实施例的收发切换器模块使用单一的电感器来提供阻抗匹配。收发切换器模块可以完全兼容于互补式金属氧化物半导体，因此可以增强电路效能，降低制造成本以及电路复杂度。
图7为本发明另一实施例的收发切换器模块的电路示意图，收发切换器模块包括天线32，阻抗匹配电路300，电压调整电路70，PA34，以及LNA36。
图3以及图4对天线32，PA34以及输入阻抗电路300进行了详细描述。在本实施例中，电压调整电路70包括电容器C1以及N型金属氧化物半导体晶体管M1。在传送模式，N型金属氧化物半导体晶体管M1工作于非饱和区以将电容器C1分路到地。LNA36的输入也接地以保护功率放大器的输出摆动。电容器C1也为PA34的输出信号提供谐波滤波。因为阻抗匹配电路300被用于PA34以及LNA36以用于信号传送以及接收，电容器C1的容量会受到更好的效率的限制。
图7中的收发切换器模块利用电压调整电路70来防止氧化物崩溃，单一的电感器用以提供阻抗匹配，并且完全兼容于互补式金属氧化物半导体，因此，增强了电路效能，降低制造成本以及电路复杂度。
虽然本发明已以较佳实施例揭示如上，然其并非用以限定本发明，任何所属技术领域中的技术人员，在不脱离本发明的范围内，可以做一些改动，因此本发明的保护范围应与权利要求所界定的范围为准。

Claims (11)

1.一种收发切换器，耦接于射频集成电路的功率放大器以及低噪声放大器，其特征在于，该收发切换器包括：
阻抗匹配电路，用以为所述的低噪声放大器的输入射频信号以及所述的功率放大器的输出射频信号提供阻抗匹配；以及
电压调整电路，耦接于所述的阻抗匹配电路、功率放大器、以及低噪声放大器，将所述的输出射频信号减弱为调整信号，其中所述的调整信号的电压位于所述的低噪声放大器的晶体管的崩溃电压内。
2.如权利要求1所述的收发切换器，其特征在于，所述的电压调整电路是分压器，用以减弱所述的输出射频信号以产生所述的调整信号。
3.如权利要求1所述的收发切换器，其特征在于，所述的电压调整电路在信号传送期间开启，以及所述的电压调整电路在信号接收期间关闭。
4.如权利要求1所述的收发切换器，其特征在于，所述的电压调整电路包括：
第一电容器以及第二电容器，所述的第一电容器以及第二电容器串联连接，该第一电容器耦接于所述的阻抗匹配电路及功率放大器，用于接收所述的输出射频信号，以及所述的第二电容器耦接于所述的低噪声放大器，并在传送所述的输出射频信号期间产生所述的调整信号；以及
第一晶体管，耦接于所述的第二电容器，在传送所述的输出射频信号期间使所述的第二电容器接地，以及在接收所述的输入射频信号期间断开所述的第二电容器与地之间的连接。
5.如权利要求1所述的收发切换器，其特征在于，所述的电压调整电路包括：
第一电容器，耦接于所述的阻抗匹配电路以及功率放大器；
电阻器，用以提供第一电压；
第一晶体管，耦接于所述的第一电容器以及所述的电阻器；以及
第二晶体管，耦接于所述的第一晶体管，所述第一晶体管接收所述第一电压以在所述第二晶体管导通时作为第二电容器，所述第二晶体管控制所述的第一晶体管以在传送所述的输出射频信号期间开启所述的第二电容器，以及在接收所述的输入射频信号期间关闭所述的第二电容器。
6.如权利要求5所述的收发切换器，其特征在于，所述的低噪声放大器包括高增益路径以及低增益路径，该高增益路径以高于该低增益路径的增益放大所述的输入射频信号；以及所述的电压调整电路进一步包括：
第三电容器，耦接于所述的低增益路径、所述的第一电容器、以及所述的第一晶体管；以及
第三晶体管，耦接于所述的第三电容器，在传送所述的输出射频信号期间将所述的第三电容器接地，以及在接收所述的输入射频信号期间断开所述的第三电容器与地之间的连接。
7.如权利要求1所述的收发切换器，其特征在于，所述的电压调整电路包括：
第一电容器；以及
第一晶体管，耦接于所述的第一电容器，在传送所述的输出射频信号期间，使所述的第一电容器接地，
其中，所述第一电容器耦接于所述阻抗匹配电路和所述功率放大器，所述第一晶体管耦接于所述第一电容器和所述低噪声放大器。
8.如权利要求1所述的收发切换器，其特征在于，所述的功率放大器包括厚氧化物晶体管，以及所述的低噪声放大器包括薄氧化物晶体管。
9.如权利要求1所述的收发切换器，其特征在于，所述的功率放大器的电量供应高于所述的低噪声放大器的电量供应。
10.如权利要求1所述的收发切换器，其特征在于，所述的低噪声放大器是串级放大器。
11.一种射频集成电路，其特征在于，该射频集成电路包括：
如权利要求1至10中任一项所述的收发切换器；
传送器模块，用以将一输出基频信号转换为所述的输出射频信号，包括用于传送所述的输出射频信号的功率放大器；
接收器模块，用以将所述的输入射频信号转换为一输入基频信号，包括用以接收所述的输入射频信号的低噪声放大器。
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