CN101359701A - Method for preparing crystal silicon solar cell local back contact based on nanometer embossing - Google Patents

Method for preparing crystal silicon solar cell local back contact based on nanometer embossing Download PDF

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Publication number
CN101359701A
CN101359701A CNA2008101199661A CN200810119966A CN101359701A CN 101359701 A CN101359701 A CN 101359701A CN A2008101199661 A CNA2008101199661 A CN A2008101199661A CN 200810119966 A CN200810119966 A CN 200810119966A CN 101359701 A CN101359701 A CN 101359701A
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crystal silicon
contact
silicon substrate
passivation layer
dielectric passivation
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CNA2008101199661A
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赵雷
王文静
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Institute of Electrical Engineering of CAS
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Institute of Electrical Engineering of CAS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

Disclosed is a method based on nanoimprint technique for preparing a crystalline silicon solar cell local back contact, including the following steps: fabricating a standard nanoimprint template (1) with a local contact pattern; depositing a medium passivating layer (3) on the backside of a crystalline silicon substrate (2); transferring the pattern on the standard template (1) to the medium passivating layer (3) through nanoimprint technique; etching a local contact area on the medium passivating layer (3) until reaching the surface of the crystalline silicon substrate (2) through wet-chemical etching or plasma etching, and then removing a polymer layer (4); and depositing a back contact electrode (5) on the whole back surface. The back contact electrode (5) is in ohmic contact with the crystalline silicon substrate (2) through the etched local contact area.

Description

A kind of method for preparing the crystal silicon solar cell local back contact based on nanometer embossing
Technical field
The present invention relates to the solar cell field, particularly a kind of method for preparing the crystal silicon solar cell local back contact.
Background technology
Development and use solar energy has become the strategic decision of the countries in the world sustainable development energy.No matter be developed country, or developing country has all formulated strategic plan, the hope of photovoltaic generation as human future source of energy.But as the part of whole society energy resource structure, present solar energy proportion is less than 1% still, and the main cause that causes this situation is that the cost of solar cell is too high.At present, the retail price of crystal silicon solar battery assembly that accounts for photovoltaic market nearly 90% is still at 4.83$/Wp, the cost that this wherein most important cost is the silicon chip of 180-300 micron thickness.In recent years, the silicon raw material is shortage sharply, and price has increased to more than 300 dollars/kilogram, makes cost of material occupy the overwhelming majority of crystal silicon battery cost.In such cases, unless adopt thinner slice, thin piece,, any method that reduces cost descends otherwise all can not making the cost of crystal silicon battery have largely.Therefore, the sheet silion cell becomes important research direction in the photovoltaic field.
But along with the decline of silicon wafer thickness, back of the body surface recombination is to the solar cell Effect on Performance highly significant that just becomes.Because the contact interface recombination rate between silicon and the metal is high, efficiency of solar cell is significantly descended, thereby, traditional full back side contact electrode, promptly the whole back side of silicon chip all is the silicon solar cell that the structure of back-contact electrode just no longer is suitable for sheet.So the notion of local back of the body contact is suggested.In the laboratory, adopt photoetching process to carve the contact zone usually, but this method cost height at the silicon chip back side, productive rate is low, and can only be produced on the very little area, thereby and is not suitable for suitability for industrialized production.Chinese patent application 200510123062.2 discloses a kind of back point-contact silicon solar cell and manufacture method thereof based on silk-screen printing technique.But the screen printing technique machining accuracy is not high, prepared contact point size and still excessive at interval, and the ohmic contact of utilizing metal paste to form is also imperfect.At present, more employings be laser ablation technology, adopt laser to ablate out several ten thousand even hundreds of thousands back of the body contact point at the silion cell back side exactly.The shortcoming of this technology is if number of lasers is limited, and then productivity ratio is very low; In order to improve productive rate, must adopt abundant laser, like this, production cost just increases greatly.
" nano impression " is a kind of brand-new nano graph clone method, is in a kind of idea that nineteen ninety-five proposed by the S.Y.Chou of Princeton university professor.In this technology, will have the standard masterplate of specific pattern, it be put on the substrate that is coated with the high-molecular optical resistance layer, after waiting to lower the temperature, remove template, can on photoresist layer, form institute's desirable pattern with marking press.In information stores, biology sensor, subwavelength optical element field, the nano impression exposure technique has become that price is relatively low, dependable performance, have the technology of preparing of volume production ability.Present nanometer embossing has in the world reached the information stores of per inch 500Gbit, and exposure area has reached 6 inches.Nano impression is expected to become a kind of suitability for industrialized production technology of large-area preparation micro-nano structure.Therefore, significantly do not increasing on the basis of cost, nanometer embossing is hopeful to be incorporated among the solar cell preparation technology, becomes the wherein effective means of required micro-nano structure of preparation.
Summary of the invention
The present invention seeks to carry on the back the preparation precision and the productive rate of contact, and reduce preparation cost, propose a kind of method of utilizing nanometer embossing to prepare the crystal silicon solar cell local back contact in order to improve the silicon solar cell local.
The concrete steps of the inventive method are as follows in order:
(1) preparation is used for the standard form with local back of the body contact pattern of nano impression;
(2) in crystal silicon substrate back deposit dielectric passivation layer;
(3) adopt nanometer embossing with the graph transfer printing on the standard form on the dielectric passivation layer of crystal silicon substrate back;
(4) adopt wet-chemical or plasma etch process on dielectric passivation layer, to etch through crystal silicon substrate and carry on the back lip-deep local back of the body contact zone; Afterwards, remove the polymer layer that plays the etching barrier layer effect;
(5) deposit back-contact electrode on whole back of the body surface, and by the ohmic contact between annealing formation back-contact electrode and crystal silicon substrate back of the body surface.
The standard form of step 1 of the present invention can adopt common photoetching, ultraviolet photolithographic, holographic lithography, electron beam exposure etc. or two or more methods that combine in them to prepare.Contact zone figure on the standard form is protruding.The difficult point of nano impression and cost are the preparation of standard form, but, for the contact of the silicon solar cell local back of the body, since characteristic size in the hundreds of nanometer to tens micron dimensions, the relatively easy making, a standard form can be reused, and in large-scale production, the cost that the preparation standard template is brought just seems insignificant.
Step 2 is in the dielectric passivation layer of crystal silicon substrate back deposit, can be can passivation crystal silicon substrate surface any material, such as amorphous silicon, silica, silicon nitride, aluminium oxide etc., its concrete preparation method is known in the solar cell field.Dielectric passivation layer can be an individual layer, also can be multilayer.When dielectric passivation layer was multilayer, these dielectric passivation layer were deposits successively.Such as, for the dielectric passivation layer of bilayer, can be first deposit one deck amorphous silicon passivation layer, and then on amorphous silicon passivation layer deposit one deck silicon nitride passivation.The purpose of deposit passivation layer is to carry on the back lip-deep recombination rate in order to reduce relief area silicon.
Step 3 adopt with the nanometer embossing of the graph transfer printing on the standard form on the dielectric passivation layer, can adopt the mature technique in the present nanometer embossing field, such as: hot padding (HEL), ultraviolet stamping (UV-NIL), stepping-flash imprint (S-FIL)) and micro-contact printing (μ CP) etc.With the hot padding is example, spin coating one layer of polymeric film on the dielectric passivation layer surface, put it into marking press heating and standard form is pressed on the thin polymer film, be reduced to temperature near the polymer solidifying point again and standard form and polymeric layer are separated, just on dielectric passivation layer, made the contact zone figure of depression, afterwards if necessary, can do slightly to corrode, expose the dielectric passivation layer surface under the contact zone figure to remove the residual polymer in recess edge.
Step 4 adopts suitable wet-chemical or plasma etch process to etch through crystal silicon substrate on dielectric passivation layer and carries on the back lip-deep local back of the body contact zone.Such as, to silica, silicon nitride passivation, can adopt rare HF solution to carry out etching.At this moment, remaining polymeric layer plays the effect of etching barrier layer in the nano impression process.Etching proceed to expose crystal silicon substrate back of the body surface or slightly over etching a bit till.Afterwards, remove polymer barrier layer.
Step 5 adopts conventional contact electrode preparation technology that back-contact electrode is deposited on the back of the body surface.Back-contact electrode can be various suitable metals, is some specific purposes, can also be the oxide of conduction, perhaps their laminated construction.The local contact zone that back-contact electrode sees through etching contacts with crystal silicon substrate back of the body surface.Then, battery is carried out subsequent treatment,, make back-contact electrode in the local contact zone and between the crystal silicon substrate back of the body surface, form good Ohmic contact such as under vacuum or inertia or reducing atmosphere, annealing.Here should be noted that the technology that forms ohmic contact can not be destroyed the inactivating performance of dielectric passivation layer on the relief area.
Optionally,, before deposit dielectric passivation layer on the crystal silicon substrate back, can also prepare aluminum back surface field earlier for improving the solar cell performance, such as, for p type silicon substrate, can be aluminium back of the body field or boron back of the body field.These aluminum back surface fields and technology of preparing are known in technical field of solar cells.
Utilize method of the present invention, can improve the dimensional accuracy of local back of the body contact area, the figure of standard masterplate is recursive to be transferred on a large amount of cell substrate, thereby has improved productive rate, has reduced preparation cost.
Description of drawings
A kind of process chart of Fig. 1 the inventive method.Wherein, 1 is standard form, and 2 is the crystal silicon substrate, and 3 is dielectric passivation layer, and 4 is polymer, and 5 is back-contact electrode.
The another kind of process chart of Fig. 2 the inventive method.Wherein, 1 is standard form, and 2 is the crystal silicon substrate, and 3 is dielectric passivation layer, and 4 is polymer, and 5 is back-contact electrode, and 6 is aluminum back surface field.
Embodiment
The invention will be further described below in conjunction with the drawings and specific embodiments.
Preparation process of the present invention is as follows:
At first adopt common photoetching, ultraviolet photolithographic, holographic lithography, electron beam exposure etc. or two or more method preparation standard templates 1 that combine wherein; Then in crystal silicon substrate 2 back side deposit dielectric passivation layer 3, described dielectric passivation layer 3 can be an individual layer, it also can be multilayer, when dielectric passivation layer 3 is multilayer, these dielectric passivation layer are deposits successively, such as, for the dielectric passivation layer 3 of bilayer, can be first deposit one deck amorphous silicon passivation layer 3a, and then on amorphous silicon passivation layer 3a deposit one deck silicon nitride passivation 3b; Adopt again nanometer embossing with the graph transfer printing on the standard form 1 on dielectric passivation layer 3; Then adopt wet-chemical or plasma etch process on dielectric passivation layer 3, to etch the lip-deep local back of the body of through crystal silicon substrate 2 back ofs the body contact zone; Remove the polymer layer 4 that plays the etching barrier layer effect afterwards; Deposit back-contact electrode 5 on whole back of the body surface carries out subsequent treatment to battery at last, such as annealing under vacuum or inertia or reducing atmosphere, makes back-contact electrode 5 form good Ohmic contact in the local contact zone and between crystal silicon substrate 2 back sides.
Optionally,, before deposit dielectric passivation layer 3 on crystal silicon substrate 2 back sides, can also prepare aluminum back surface field 6 earlier for improving the solar cell performance, such as, for p type crystal silicon substrate, can be aluminium back of the body field or boron back of the body field.
Embodiment 1
As shown in Figure 1, step 1 adopts the preparation of normal optical lithography to be used for the standard form 1 with local back of the body contact pattern of nano impression; Step 2, using plasma assistant chemical vapor deposition (PECVD) equipment is in crystal silicon substrate 2 back side deposit dielectric passivation layer 3; Step 3, adopt hot press printing technology with the graph transfer printing on the standard form 1 on dielectric passivation layer 3, specifically comprise: spin coating one layer of polymeric 4 on dielectric passivation layer 3 surfaces, put it into marking press heating and standard form 1 is pressed on the polymer 4, also standard form 1 and polymer 4 are separated near again temperature being reduced to polymer 4 solidifying points, carry out selective corrosion at last and remove the remaining polymer in figure bottom; Step 4 adopts wet-chemical chamber technology to etch the lip-deep local back of the body of through crystal silicon substrate 2 back ofs the body contact zone on dielectric passivation layer 3, adopts chemical corrosion to remove polymer layer 4 afterwards; Step 5 adopts thermal evaporation method deposit back-contact electrode 5 on whole back of the body surface, and anneals under hydrogen reduction atmosphere, makes back-contact electrode 5 in the local back of the body contact zone that etches and form ohmic contact between crystal silicon substrate 1 back side.
Embodiment 2
As shown in Figure 2, step 1 adopts the preparation of ultraviolet photolithographic technology to be used for the standard form 1 with local back of the body contact pattern of nano impression; Step 2 adopts boron diffusion technology to prepare aluminum back surface field 6 at crystal silicon substrate 2 back sides of p type; Step 3, using plasma assistant chemical vapor deposition (PECVD) equipment deposit dielectric passivation layer 3 on aluminum back surface field 6 surfaces comprises first deposition of amorphous silicon passivation layer 3a, and then on amorphous silicon passivation layer 3a deposit silicon nitride passivation layer 3b; Step 4, adopt hot press printing technology with the graph transfer printing on the standard form 1 on dielectric passivation layer 3, specifically comprise: spin coating one layer of polymeric 4 on dielectric passivation layer 3 surfaces, put it into marking press heating and standard form 1 is pressed on the polymer 4, also standard form 1 and polymer 4 are separated near again temperature being reduced to polymer 4 solidifying points, carry out selective corrosion at last and remove the remaining polymer in figure bottom; Step 5 adopts wet-chemical chamber technology to etch through aluminum back surface field 6 lip-deep local back of the body contact zones on dielectric passivation layer 3, adopts chemical corrosion to remove polymer layer 4 afterwards; Step 6 adopts thermal evaporation method deposit back-contact electrode 5 on whole back of the body surface, and anneals under hydrogen reduction atmosphere, makes back-contact electrode 5 in the local back of the body contact zone that etches and form ohmic contact between the aluminum back surface field 6.

Claims (2)

1, a kind ofly prepare the method for crystal silicon solar cell local back contact, it is characterized in that preparation process comprises in order based on nanometer embossing:
(1) preparation is used for the standard form (1) with local back of the body contact pattern of nano impression;
(2) in crystal silicon substrate (2) back side deposit dielectric passivation layer (3);
(3) adopt nanometer embossing with the graph transfer printing on the standard form (1) on the dielectric passivation layer (3) at crystal silicon substrate (2) back side;
(4) adopt wet-chemical or plasma etch process on dielectric passivation layer (3), to etch the lip-deep local back of the body of through crystal silicon substrate (2) back of the body contact zone, remove the polymer layer (4) that plays the etching barrier layer effect afterwards;
(5) deposit back-contact electrode (5) on whole back of the body surface, and by the ohmic contact between the annealing formation back-contact electrode (5) and crystal silicon substrate (2) back side.
2, according to claim 1ly a kind ofly prepare the method for crystal silicon solar cell local back contact, it is characterized in that, go up deposit dielectric passivation layer (3) before, can prepare aluminum back surface field (6) earlier on crystal silicon substrate (2) back of the body surface based on nanometer embossing.
CNA2008101199661A 2008-09-19 2008-09-19 Method for preparing crystal silicon solar cell local back contact based on nanometer embossing Pending CN101359701A (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130213A (en) * 2010-12-31 2011-07-20 常州天合光能有限公司 Preparation method of selective emitter junction silicon solar cell with rear surface passivation
CN102148292A (en) * 2011-03-22 2011-08-10 上海采日光伏技术有限公司 Preparation method for texture of solar cell
CN102299197A (en) * 2010-06-25 2011-12-28 台湾积体电路制造股份有限公司 Manufacturing method of photovoltaic device and solar cell
CN102420194A (en) * 2011-04-29 2012-04-18 上海华力微电子有限公司 Passivation layer of integrated circuit and manufacturing method of passivation layer
CN102709383A (en) * 2012-05-08 2012-10-03 常州天合光能有限公司 Method for processing electroplating front surface
CN103576448A (en) * 2013-11-06 2014-02-12 无锡英普林纳米科技有限公司 Method for preparing porous antireflection film through nanometer coining
CN104185874A (en) * 2012-01-16 2014-12-03 赫劳斯贵金属北美康舍霍肯有限责任公司 Aluminum conductor paste for back surface passivated cells with locally opened vias

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102299197A (en) * 2010-06-25 2011-12-28 台湾积体电路制造股份有限公司 Manufacturing method of photovoltaic device and solar cell
US8563351B2 (en) 2010-06-25 2013-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing photovoltaic device
CN102299197B (en) * 2010-06-25 2014-06-04 台湾积体电路制造股份有限公司 Manufacturing method of photovoltaic device and solar cell
US9202947B2 (en) 2010-06-25 2015-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photovoltaic device
CN102130213A (en) * 2010-12-31 2011-07-20 常州天合光能有限公司 Preparation method of selective emitter junction silicon solar cell with rear surface passivation
CN102148292A (en) * 2011-03-22 2011-08-10 上海采日光伏技术有限公司 Preparation method for texture of solar cell
CN102148292B (en) * 2011-03-22 2012-07-04 上海采日光伏技术有限公司 Preparation method for texture of solar cell
CN102420194A (en) * 2011-04-29 2012-04-18 上海华力微电子有限公司 Passivation layer of integrated circuit and manufacturing method of passivation layer
CN102420194B (en) * 2011-04-29 2014-06-04 上海华力微电子有限公司 Passivation layer of integrated circuit and manufacturing method of passivation layer
CN104185874A (en) * 2012-01-16 2014-12-03 赫劳斯贵金属北美康舍霍肯有限责任公司 Aluminum conductor paste for back surface passivated cells with locally opened vias
CN102709383A (en) * 2012-05-08 2012-10-03 常州天合光能有限公司 Method for processing electroplating front surface
CN103576448A (en) * 2013-11-06 2014-02-12 无锡英普林纳米科技有限公司 Method for preparing porous antireflection film through nanometer coining

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