CN101298365B - Preparation and use of electronic device passivation encapsulation modified zinc-boron-silicon-lead glass powder - Google Patents

Preparation and use of electronic device passivation encapsulation modified zinc-boron-silicon-lead glass powder Download PDF

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CN101298365B
CN101298365B CN 200810036190 CN200810036190A CN101298365B CN 101298365 B CN101298365 B CN 101298365B CN 200810036190 CN200810036190 CN 200810036190 CN 200810036190 A CN200810036190 A CN 200810036190A CN 101298365 B CN101298365 B CN 101298365B
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glass powder
step
silicon
glass frit
boron
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CN 200810036190
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CN101298365A (en )
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王海风
田海兵
罗春炼
韩文爵
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东华大学
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Abstract

The invention discloses a production method for a modified zinc-boron-silicon-lead glass powder for the passivating encapsulation of electron device and an application thereof, which includes the following steps of: weighing according to the weight percentage and evenly mixing the materials of ZnO, B2O3, SiO2 and Pb3O4, and smelting the materials into glass fluid, then rolling the glass fluid into broken pieces, drying and sifting the broken pieces to obtain the nucleated glass powder; then adding Y2O3 into the ZrO2 colloid to produce superfine ZrO2 powder; then the glass powder and the superfine ZrO2 powder are mixed according to a certain ratio to obtain the modified zinc-boron-silicon-lead glass powder. The modified zinc-boron-silicon-lead glass powder is then blended into paste that is evenly coated on the P-N bond area of the electronic or semiconductor device, then sintered for solidification. The invention has the advantages that the modified zinc-boron-silicon-lead glass powder provided by the invention has enough strength, fracture toughness and folding strength, also the glass powder has good thermal shock resistance, low swelling property, good compatibility with transistor silicon single crystal, good electric performance and higher impact resistance to high and low temperature.

Description

电子器件钝化封装改性锌硼硅铅系玻璃粉的制备和应用技术领域[0001] 本发明属于电子、半导体器件钝化封装材料技术领域,特别是涉及一种高可靠适应高低温骤变的电子器件钝化封装改性锌硼硅铅系玻璃粉的制备和应用。 Electronic device passivation and preparation Technical Field package zinc-modified lead borosilicate-based glass frit [0001] The present invention belongs to the electronic, semiconductor device passivation BACKGROUND encapsulating material, particularly relates to a highly reliable high temperature accommodate sudden changes in preparation and application of an electronic device package passivation modified lead-zinc borosilicate glass frit. 背景技术[0002] 随着半导体技术的发展,电子、半导体器件的钝化封装也越来越受到重视, SiO-B2O3-SiO2-PbO锌硼硅铅系微晶玻璃由于其同单晶硅有良好的热膨胀匹配系数,体积小、耐高温、耐疲劳性好,能有效阻止外界杂质的影响,降低Na+的迁移率,而成为一种良好的封装材料。 [0002] With the development of semiconductor technology, passive electronic packaging, semiconductor devices more and more attention, SiO-B2O3-SiO2-PbO-based lead-zinc borosilicate glass ceramics because of its silicon single crystal with good matching coefficient of thermal expansion, small volume, high temperature, good fatigue resistance, can effectively prevent the influence of foreign objects, reduce the mobility of Na +, and become a good encapsulation material. 但是由于该材料本身属脆性材料,韧性的不足使其容易在高低温骤变冲击使用中炸裂而使电子、半导体器件失效或大幅度降低性能。 However, since the material itself is part of brittle material, the lack of toughness in high temperature making it easy to sudden changes in the electron impact burst in use, the semiconductor device failure or a significant reduction in performance. [0003] 用含IO3超细粉改善锌硼硅微晶玻璃材料的抗热震性能的研究尚未见报道。 [0003] Study on improving thermal shock resistance of zinc borosilicate glass-ceramic material containing ultrafine powder IO3 has not been reported. 发明内容[0004] 本发明的目的在于提供一种用含IO3超细^O2改性的抗高低温骤变的锌硼硅铅系电子、半导体器件钝化封装玻璃粉,作为一种具有封装、固化、保护、促进作用的新型功能材料,该玻璃粉可广泛应用于航天航空、飞行器、船舶,军工装备等行业的电子功率器件、密封器件上。 SUMMARY OF THE INVENTION [0004] The object of the present invention is to provide an ultrafine IO3 ^ O2 containing modified high and low temperature sudden changes in lead-zinc borosilicate electronics, glass powder passivated semiconductor device package as a packaging having, cure, protect, promote the role of new functional materials, the glass powder can be widely used in electronic power devices, sealed device aerospace, aircraft, ships, military equipment and other industries. [0005] 为达到上述目的,本发明所采取的技术方案如下:当锌硼硅铅系玻璃粉中引入含Y2O3超细^o2粉后,由于单斜的Hi-^o2转变到四方的转化晶格常数变化很大,伴随有像碳素钢中的奥氏体与马氏体之间的转变相似的体积效应约5%。 [0005] To achieve the above object, the present invention is adopted technical solution is as follows: When introducing lead-zinc borosilicate glass powder in the ultrafine ^ o2 containing Y2O3 powder, since Hi- ^ o2 monoclinic crystals change into tetragonal transformation of large lattice constant changes, accompanied by carbon steel as a transition between the martensitic and austenitic similar in effect to about 5% by volume. 根据^O2相变特点, 如果^o2晶粒从高温冷却下来时,因滞后效应,材料中一部分的^O2就能以稳定的^O2的形式保存下来,并在基体中储存了相变弹性压应变能。 The phase transition characteristics ^ O2, if ^ o2 grains cooled down from a high temperature, due to the hysteresis effect, a portion of the material ^ O2 can be preserved in a stable form of ^ O2, and store the phase transition pressure in the elastic matrix strain energy. 当受到外力作用时,基体对^O2压抑作用得到松弛,ZrO2颗粒就发生四方到单斜的相转变,并在机体中引起微裂纹,它吸收了裂纹扩展的能量,削弱或阻止了裂纹的扩展,达到增韧补强的目的。 When external force is applied, the resulting matrix ^ repression O2 slack, of ZrO2 particles to monoclinic phase transition occurs tetragonal to, and cause microcracks in the body, which absorbs the crack propagation energy, weaken or prevent crack propagation achieve toughening purposes. [0006] 电子器件钝化封装改性锌硼硅铅系玻璃粉的制备步骤:[0007] (1)在石英坩埚或白金坩埚中,将下列各组分原料按重量百分比称量,混合,搅拌均勻;[0008] ZnO 56-63 ;[0009] B2O3 20-25 ;[0010] SiO2 6-10 ;[0011] Pb3O4 4-7 ;[0012] 混合料AA或混合料BB 4-7,[0013] 所述混合料AA由下列各组分原料按其占AA重量百分比称量混合:[0014] Al2O3 8.0-10.5;[0015] Bi2O3 45. 5-49. O ;[0016] CeO 29.0-30.5;[0017] Nb2O.13. 0-18. 5,[0018] 所述混合料BB由下列各组分原料按其占BB重量百分比称量混合:[0019] Al2O.[0020] Bi2O.[0021] CeO[0022] Nb2O.[0023] Sb2O.7. 2-8. 5 ; 41. 0-45. 0 ; 26. 8-27. 5 ; 13. 2-14. 9 ; 5. 5-8. 3。 [0006] Preparation of an electronic device passivation step package zinc-modified lead borosilicate-based glass powder: [0007] (1) in a quartz crucible or a platinum crucible, the raw material The following ingredients by weight percent weighing, mixing, stirring uniformity; [0008] ZnO 56-63; [0009] B2O3 20-25; [0010] SiO2 6-10; [0011] Pb3O4 4-7; [0012] or AA mixture mixture BB 4-7, [0013 ] the following ingredients were mixed by a raw material AA AA account their mixing weight percent weighing: [0014] Al2O3 8.0-10.5; [0015] Bi2O3 45. 5-49 O; [0016] CeO 29.0-30.5;. .. [0017] Nb2O.13 0-18 5, [0018] the following ingredients were mixed by a raw material BB BB account their mixing weight percent weighing: [0019] Al2O [0020] Bi2O [0021].. CeO [0022] Nb2O [0023] Sb2O.7 2-8 5;.... 41. 0-45 0;. 26. 8-27 5;. 13. 2-14 9;. 5. 5-8 3 . [0024] (2)使用高温熔炉在1300-1380°C将所述石英坩埚或白金坩埚中混合料熔炼成均勻玻璃液;[0025] (3)使用耐热不锈钢水冷连续轧片机将玻璃液轧成0. 5mm的碎薄片,淬碎,烘干;[0026] (4)再使用钢玉罐球磨机粉碎,将上述步骤(3)玻璃碎片粉碎,过200-250目筛子, 制得玻璃粉;[0027] (5)使用熔胶-凝胶法在^O2胶体中掺入IO3制备超细^O2粉,其中IO3重量为超细^O2粉重量的5. 2士0. 5% ;[0028] (6)球磨机粉碎含有AO3的超细^O2粉,使其颗粒度D5tl = 1. 8-2. 5 μ m ;[0029] (7)再将步骤(4)制备的玻璃粉,以及步骤(6)制备的超细^O2粉,放入YCQ100 超声波振荡器中加球混和,混合搅拌均勻,其中步骤(6)制备的超细&02粉的重量为玻璃粉重量的5-16%,制得电子器件钝化封装改性锌硼硅铅系玻璃粉;[0030] 电子器件钝化封装改性锌硼硅铅系玻璃粉的应用步骤:[0031] (1)将电子器件钝化封装改性 [0024] (2) using a high temperature furnace at 1300-1380 ° C the quartz crucible or a platinum crucible to form a homogeneous mixture melted molten glass; [0025] (3) water-cooled stainless steel heat resistant continuous rolling machine molten glass 0. 5mm sheet rolled into pieces, the pieces quenching, drying; [0026] (4) can re-use the steel-ball mill, the above step (3) glass cullet pulverized and sieved through 200-250 mesh sieve, to obtain glass powder ; [0027] (5) use of melt - incorporated in the gel colloid IO3 ^ O2 ^ O2 ultrafine powder, wherein the weight IO3 ^ O2 ultrafine powder 5.2 wt disabilities 0.5%; [ 0028] (6) in a ball mill containing AO3 ^ O2 ultrafine powder, so that the particle size D5tl = 1. 8-2 5 μ m;. glass frit (4) preparation of [0029] (7) and then step, and step (6) ultrafine powder prepared ^ O2, into the ultrasonic oscillator YCQ100 ball mixture was added, mixing evenly, wherein step (6) prepared in & ultrafine powder is 5-16 weight 02% by weight of glass frit, the electronic device package prepared passivation modified lead-zinc borosilicate glass frit; [0030] the electronic device package passivation modified lead-zinc borosilicate glass frit application step: [0031] (1) an electronic device package passivated modified 硼硅铅系玻璃粉,用10兆以上的去离子水调和成浆料,再将浆料均勻地涂封在电子、半导体器件PN结合面处;[0032] (2)置于氮气保护的电炉中在700-750°C烧结10_30分钟,固化封装。 Lead-borosilicate glass frit, with more than 10 megabytes of deionized water to form a slurry reconcile, then the slurry was uniformly coated electronic seal, PN junction surface of the semiconductor device; [0032] (2) was placed in an electric furnace in nitrogen sintering 10_30 minutes at 700-750 ° C, curing package. [0033] 本发明的优点是:提供的电子器件钝化封装改性锌硼硅铅系玻璃,具有足够的强度,断裂韧性、抗折强度高,低膨胀性、抗热震性好,与晶体管硅单晶有良好的匹配性及优良的电学性;具有更高的抗高低温冲击强度。 [0033] The advantages of the present invention is: an electronic device package passivation modified zinc borosilicate lead glass provided with sufficient strength, fracture toughness, high flexural strength, low expansion, good thermal shock resistance, and the transistor a silicon single crystal with good matching properties and excellent electrical properties; more resistant to high and low temperature impact strength. 具体实施方式[0034] 下面结合实施例,对本发明作进一步阐述。 DETAILED DESCRIPTION [0034] below with reference to embodiments of the present invention will be further explained. [0035] 实施例一[0036] 电子器件钝化封装改性锌硼硅铅系玻璃粉的制备步骤:[0037] (1)在石英坩埚或白金坩埚中,将下列各组分原料按重量百分比称量,混合,搅拌均勻;[0038] [0035] Example a [0036] Preparation of an electronic device passivation step of packaging the modified lead-zinc borosilicate glass frit: [0037] (1) in a quartz crucible or a platinum crucible, the raw material The following ingredients in weight percent weighing, mixing, stirring evenly; [0038]

Figure CN101298365BD00041

[0039] 所述混合料AA由下列各组分原料按其占AA重量百分比称量混合:[0040] [0039] The following ingredients were mixed by a raw material AA AA account their mixing weight percent weighing: [0040]

Figure CN101298365BD00051

[0041] (2)使用高温熔炉在1360°C将所述石英坩埚或白金坩埚中混合料熔炼成均勻玻璃液;[0042] (3)使用耐热不锈钢水冷连续轧片机将玻璃液轧成0. 5mm的碎薄片,淬碎,烘干;[0043] (4)再使用钢玉罐球磨机粉碎,将上述步骤(3)玻璃碎片粉碎,过200目筛子,制得玻璃粉;[0044] (5)使用熔胶-凝胶法在^O2胶体中掺入IO3制备超细^O2粉,其中IO3重量为超细^O2粉重量的5. 2士0. 5% ;[0045] (6)球磨机粉碎含有^O3的超细^O2粉,使其颗粒度D5tl = 2. 5 μ m ;[0046] (7)再将步骤(4)制备的玻璃粉,以及步骤(6)制备的超细^O2粉,放入YCQ100 超声波振荡器中加球混和,混合搅拌均勻,其中步骤(6)制备的超细&02粉的重量为玻璃粉重量的10%,制得改性锌硼硅铅系电子器件钝化封装玻璃粉;[0047] 电子器件钝化封装改性锌硼硅铅系玻璃粉的应用步骤:[0048] (1)将改性锌硼硅铅系电子器件钝化封装玻 [0041] (2) using a high temperature furnace at 1360 ° C the quartz crucible or a platinum crucible mix melted to form a homogeneous molten glass; [0042] (3) a heat-resistant stainless steel water cooled continuous rolling machine glass was rolled to 0. 5mm sheet is broken, broken quenching, drying; [0043] (4) can re-use the steel-ball mill, the above step (3) glass cullet pulverized and sieved through 200 mesh sieve, to obtain glass frit; [0044] (5) melt - incorporated in the gel colloid IO3 ^ O2 ^ O2 ultrafine powder, wherein the weight IO3 ^ O2 ultrafine powder 5.2 wt disabilities 0.5%; [0045] (6 ) ^ a ball mill containing ultrafine powder ^ O3 in the O2, so that the particle size D5tl = 2. 5 μ m; preparation of glass powder (4) preparation of [0046] (7) and then step, and a step (6) super ^ O2 fine powder, the ultrasonic oscillator into YCQ100 ball mixture was added, mixing evenly, wherein step (6) ultrafine powder prepared in 02 & by weight glass frit is 10% by weight, to obtain a modified lead-zinc borosilicate the electronic device package passivation glass frit; [0047] the electronic device package passivation modified lead-zinc borosilicate glass frit application step: [0048] (1) the modified lead-zinc borosilicate glass encapsulated electronic device passivation 璃粉,用10兆以上的去离子水调和成浆料,再将浆料均勻地涂封在电子、半导体器件PN结合面处;[0049] (2)置于氮气保护的电炉中在720°C烧结15分钟,固化封装。 Glass powder, with more than 10 megabytes reconcile deionized water to form a slurry, then the slurry was uniformly coated on an electronic seal, PN junction surface of the semiconductor device; [0049] (2) was placed in an electric furnace in nitrogen at 720 ° C sintering 15 min cure package. [0050] 实施例二[0051] 按实施例一中步骤进行,在步骤(1),[0052] [0050] Second Embodiment [0051] In a step according to embodiments, in step (1), [0052]

Figure CN101298365BD00052

[0053] 所述混合料AA由下列各组分原料按其占AA重量百分比称量混合:[0054] [0053] The following ingredients were mixed by a raw material AA AA account their mixing weight percent weighing: [0054]

Figure CN101298365BD00053

[0055] 在步骤O),熔制温度1380°C,在步骤,过250目筛子,在步骤(6),筛分得颗粒度D5tl = 2. 1 μ m,在步骤(7),超细粉的重量为玻璃粉重量的15% ;在应用部分步骤(2),电炉温度700°C烧结20分钟,按钝化封装工艺固化。 [0055] In step O), melting temperature of 1380 ° C, in step, through a 250 mesh sieve, in step (6), sieved to give a particle size D5tl = 2. 1 μ m, in step (7), ultrafine 15% by weight of powder of glass frit by weight; at step application part (2), a temperature of 700 ° C sintering furnace for 20 minutes and cured by passivation packaging process. 测试各种性能,参见性能比较表。 Testing a variety of performance, see performance comparison table. [0056] 实施例三[0057] 按实施例一中步骤进行,在步骤(1),[0058] [0056] Third Embodiment [0057] In a step according to embodiments, in step (1), [0058]

Figure CN101298365BD00061

[0059] 所述混合料BB由下列各组分原料按其占BB重量百分比称量混合[0060] [0059] The following ingredients were mixed by a raw material BB BB account their weight percentages were weighed mixing [0060]

Figure CN101298365BD00062

[0061] 在步骤O),熔制温度1340°C,在步骤,过200目筛子,在步骤(6),筛分得颗粒度D5tl = 2.0 μ m,在步骤(7),超细粉的重量为玻璃粉重量的10% ;在应用部分步骤(2),电炉温度740V烧结20分钟,按钝化封装工艺固化。 [0061] In step O), melting temperature of 1340 ° C, at step 200 mesh sieve, in step (6), sieved to give a particle size D5tl = 2.0 μ m, in step (7), micropowder 10% by weight of glass frit by weight; at step application part (2), the sintering furnace temperature 740V for 20 minutes and cured by passivation packaging process. 测试各种性能,参见性能比较表。 Testing a variety of performance, see performance comparison table. [0062] 实施例四[0063] 按实施例一中步骤进行,在步骤(1),[0064] [0062] Fourth Embodiment [0063] In a step according to embodiments, in step (1), [0064]

Figure CN101298365BD00063
Figure CN101298365BD00064

[0067] 在步骤O),熔制温度1340°C,在步骤,过250目筛子,在步骤(6),筛分得颗粒度D5tl= 1.8μπι,在步骤(7),超细粉的重量为玻璃粉重量的15% ;在应用部分步骤(2),电炉温度750V烧结30分钟,按钝化封装工艺固化。 [0067] In step O), melting temperature of 1340 ° C, in step, through a 250 mesh sieve, in step (6), sieved to give a particle size D5tl = 1.8μπι, in step (7), the weight of micropowder 15% by weight of glass frit; at step application part (2), an electric furnace 750V sintering temperature for 30 minutes and cured by passivation packaging process. 测试各种性能,参见性能比较表。 Testing a variety of performance, see performance comparison table. [0068] 实施例五[0069] 按实施例一中步骤进行,在步骤(1),[0070] [0068] Fifth Embodiment [0069] In a step according to embodiments, in step (1), [0070]

Figure CN101298365BD00065

[0071] 所述混合料BB由下列各组分原料按其占BB重量百分比称量混合:成分Al2O3 Bi2O3 CeO Nb2O3 Sb2O3含量(wt%) 7.8 43.0 26.9 14.2 8. 1[0073] 在步骤(¾,熔制温度1320°C,在步骤(4),过250目筛子,在步骤(6),筛分得颗粒度D5tl= 1.8μπι,在步骤(7),超细粉的重量为玻璃粉重量的5%;在应用部分步骤0), 电炉温度750°C烧结20分钟,按钝化封装工艺固化。 [0071] The following ingredients were mixed by a raw material BB BB account their weight percentages were weighed mixing: ingredient Al2O3 Bi2O3 CeO Nb2O3 Sb2O3 content (wt%) 7.8 43.0 26.9 14.2 8. 1 [0073] In step (¾, melting temperature 1320 ° C, in step (4), through a 250 mesh sieve, in step (6), sieved to give a particle size D5tl = 1.8μπι, in step (7), the weight of ultrafine powder of glass frit by weight 5%; 20 min sintering step application part 0), furnace temperature 750 ° C, cured by passivation packaging process. 测试各种性能,参见性能比较表。 Testing a variety of performance, see performance comparison table. [0074] 性能比较表[0075] [0074] Performance comparison table [0075]

Figure CN101298365BD00081

〔0076〕 筇葙油浮簦铒穷雏过TC-100辄韹抖邮麥俄燁簦沛iK',402ES—3 DC-4006〔0077〕 筇糸¾浮簦铒郭齑过画郭SS70-94郭齑。 [0076] species of bamboo seeds of oil floating umbrella for stalls erbium poor child had TC-100 Noir Russian wheat Ye Ying shake-mail umbrella for stalls Pei iK ', 402ES-3 DC-4006 [0077] Qiong Er Mi ¾ floating umbrella for stalls Guo Guo Ji have painted SS70-94 Guo Ji. 〔0078〕 陈葙油將簦过韋浮绿焰菹商爹P㈤.3。 [0078] Chen Wei seeds of oil through the umbrella for stalls floating green flame Potamogeton father P㈤.3 supplier. 』猫鲥埋1. Sgp ·3。 "Cats shad buried 1. Sgp · 3. Λ猫鲥T 60% .¾¾",¾¾ 遄砘v-A5gpa 猫鲥埋7gpa,猫鲥7 ;30%附埘,郐麥ΙΙ_>-Λ 0。c -180。c 猫鲥™0°C -260°c,提高了30%左右,导热系数和热膨胀系数均有3-8%的下降,有利于抗冷热骤变性能提高。 Lambda cat shad T 60% .¾¾ ", ¾¾ Trent Dun v-A5gpa 7 GPa buried shad cat, cat shad 7; 30% Shí attached, Kuai wheat ΙΙ _> - Λ 0.c -180.c cat shad ™ 0 ° C - 260 ° c, 30% increased, thermal conductivity and thermal expansion coefficient are 3-8% decline in favor of improved resistance to thermal shock properties.

Claims (2)

  1. 1. 一种电子器件钝化封装改性锌硼硅铅系玻璃粉的制备,其特征在于,包含下列步骤:(1)在石英坩埚或白金坩埚中,将下列各组份原料按重量百分比称量,混合,搅拌均勻;ZnO 56-63 ;B2O3 20-25 ;SiO2 6-10 ;Pb3O4 4-7 ;混合料AA或混合料BB 4-7,所述混合料AA由下列各组分原料按其占AA重量百分比称量: Al2O3 8. 0-10. 5 ;Bi2O3 45. 5-49. 0 ;CeO 29. 0-30.5 ;Nb2O3 13.0-16.0,所述混合料BB由下列各组分原料按其占BB重量百分比称量:Al2O3 7. 2-8. 5 ;Bi2O3 41. 0-45. 0 ;CeO 26. 8-27. 5 ;Nb2O3 13. 2-14. 9 ;Sb2O3 5. 5-8. 3,(2)使用高温熔炉在1300-1380°C将所述石英坩埚或白金坩埚中配合料熔炼成均勻玻璃液;(3)使用耐热不锈钢水冷连续轧片机将玻璃液轧成0. 5mm的碎薄片,淬碎,烘干;(4)再使用钢玉罐球磨机粉碎,将上述步骤C3)玻璃碎片粉碎,过200-250目筛子,制得玻璃粉;(5)使用溶胶-凝胶法在 1. Preparation of an electronic device package passivation modified lead-zinc borosilicate glass frit, characterized in that it comprises the following steps: (1) a platinum crucible or a quartz crucible, the raw material The following ingredients by weight percent, said parts amount, mixing, stirring evenly; ZnO 56-63; B2O3 20-25; SiO2 6-10; Pb3O4 4-7; mix or mixes AA BB 4-7, mix the following components by a material according to AA which accounts weight percent weighing AA: Al2O3 8. 0-10 5; Bi2O3 45. 5-49 0; CeO 29. 0-30.5; Nb2O3 13.0-16.0, the mixture from the following ingredients were mixed according to BB. which accounts weight percent weighing BB: Al2O3 7. 2-8 5; Bi2O3 41. 0-45 0; CeO 26. 8-27 5; Nb2O3 13. 2-14 9; Sb2O3 5. 5-8.... 3, (2) the use of a high temperature furnace at 1300-1380 ° C the quartz crucible or a platinum crucible to form a homogeneous glass batch melting liquid; (3) water-cooled stainless steel heat resistant continuous rolling machine glass was rolled to 0 . 5mm sheet broken, broken quenching, drying; (4) can re-use the steel-ball mill, the above-described step C3) glass cullet pulverized and sieved through 200-250 mesh sieve, to obtain glass frit; (5) using the sol - gel method ^O2胶体中掺入IO3制备超细^O2粉,其中IO3重量为超细ZrO2 粉重量的5. 2士0. 5% ;(6)球磨机粉碎含有^O3的超细^O2粉,使其颗粒度D5tl = 1. 8-2. 5 μ m ;(7)再将步骤⑷制备的玻璃粉,以及步骤(6)制备的超细粉,超声波混合,加球, 搅拌均勻,其中步骤(6)制备的超细粉的重量为玻璃粉重量的5-16%,制得电子器件钝化封装改性锌硼硅铅系玻璃粉。 Incorporation of the O2 colloid ^ ^ IO3 the O2 Ultrafine powder, wherein the weight IO3 ultrafine powder by weight ZrO2 0.5% 5.2 disabilities; (6) ^ a ball mill containing ultrafine powder ^ O3 in the O2, it particle Size D5tl = 1. 8-2 5 μ m; (7) then the glass frit ⑷ prepared in step, and a step (6) preparation of ultrafine powder, ultrasonic mixing, ball added, stirred uniformly, wherein the step (6 ) by weight of micropowder prepared 5-16% by weight of glass frit, prepared passivation electronics package zinc-modified lead borosilicate-based glass frit.
  2. 2. 一种如权利要求1所述的电子器件钝化封装改性锌硼硅铅系玻璃粉的应用,其特征在于,包含下列步骤:(1)将电子器件钝化封装改性锌硼硅铅系玻璃粉,用10兆以上的去离子水调和成浆料,再将浆料均勻地涂封在电子、半导体器件PN结合面处;(2)置于氮气保护的电炉中在700-750°C烧结10-30分钟,固化封装。 An electronic device package passivation modified lead-zinc borosilicate glass frit Use according to claim 1, characterized in that it comprises the following steps: (1) an electronic device package passivation modified zinc borosilicate lead-based glass frit, with more than 10 megabytes of deionized water to form a slurry reconcile, then the slurry was uniformly coated electronic seal, PN junction surface of the semiconductor device; (2) placed in an electric furnace in nitrogen 700-750 sintered ° C for 10-30 minutes, the cured encapsulation.
CN 200810036190 2008-04-17 2008-04-17 Preparation and use of electronic device passivation encapsulation modified zinc-boron-silicon-lead glass powder CN101298365B (en)

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CN101585660B (en) 2009-06-23 2012-03-07 珠海彩珠实业有限公司 Preparation of lead-silicon-aluminum glass powder for passivation encapsulation of semiconductor
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CN1067032A (en) 1991-05-23 1992-12-16 康宁玻璃公司 Zinc phosphate low temperature glasses
CN1087883A (en) 1992-08-03 1994-06-15 康宁玻璃公司 Non-lead sealing glasses
US6355586B1 (en) 1999-02-25 2002-03-12 Asahi Glass Company, Limited Low melting point glass and glass ceramic composition
CN1830856A (en) 2006-03-17 2006-09-13 东华大学 Leadless phosphate seal glass and its preparation method

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CN1067032A (en) 1991-05-23 1992-12-16 康宁玻璃公司 Zinc phosphate low temperature glasses
CN1087883A (en) 1992-08-03 1994-06-15 康宁玻璃公司 Non-lead sealing glasses
US6355586B1 (en) 1999-02-25 2002-03-12 Asahi Glass Company, Limited Low melting point glass and glass ceramic composition
CN1830856A (en) 2006-03-17 2006-09-13 东华大学 Leadless phosphate seal glass and its preparation method

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