CN101290902B - Manufacturing method of support pin, support pin, heat treatment device and base board sintering furnace - Google Patents
Manufacturing method of support pin, support pin, heat treatment device and base board sintering furnace Download PDFInfo
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- CN101290902B CN101290902B CN2008100933516A CN200810093351A CN101290902B CN 101290902 B CN101290902 B CN 101290902B CN 2008100933516 A CN2008100933516 A CN 2008100933516A CN 200810093351 A CN200810093351 A CN 200810093351A CN 101290902 B CN101290902 B CN 101290902B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
The invention provides a manufacturing method for a support pin, a support pin, a thermal treatment device and a substrate firing furnace. The support pin supports a substrate processed by thermal treatment, which has high durability of thermal decomposition and oxygenolysis. The method comprises the following steps of firstly, ejecting a shaped material (resin preferably) of a main body (101) shaped in a specific pin shape under the condition of oxygen and/or water with concentration lower than 10 ppm, so as to form a main body (101) of the support pin (100), and then, forming a fluorocarbon membrane (102) through electrostatic powder coating on the surface of the obtained main body (101), so as to obtain the support pin (100) that supports the substrate processed by thermal treatment.
Description
Technical field
The present invention relates to semiconductor substrate, liquid crystal indicator with glass substrate, photomask with glass substrate, plasma show with glass substrate, CD with enforcement such as substrate (being designated hereinafter simply as " substrate ") heat treated when, the supporting pin that the substrate that is implemented this heat treated is supported.
Background technology
Substrate is implemented the substrate board treatment of a series of processing, have the cell processing portion (for example burning till handling part, clean portion, resist-coating portion, development section etc.) that substrate is carried out various processing.
In substrate board treatment, for example base board sintering furnace is such, and at the handling part that substrate is carried out heat treated, the parts that are arranged in the handling part are exposed at high temperature.Therefore, require parts thermal decomposition, oxidation Decomposition to be had the durability of height.
For example, in the situation that is base board sintering furnace, shown in Fig. 7 A, by being contained in the bracing frame 92 in the framework 91, a plurality of substrate W are deposited with multilayered state, by (omitting among the figure) such as heaters framework 91 inner spaces are warming up to the given treatment temperature of burning till, substrate W are carried out burn till processing thus.At this, on each support component 921 of cantilever position supporting substrate W, shown in the dotted line of Fig. 7 B, to be provided with the upwards supporting pin 922 of ground, top support substrate back to determining deviation.
The supporting pin of supporting substrate in such base board sintering furnace is owing to continue to be exposed in the inner space of framework 91 and burn till under the such high temperature of treatment temperature, so can be thermal decomposited at leisure, oxidation Decomposition.Thus, supporting pin can slowly attenuate, and has crossed 2-3, and (Fig. 7 B) will come off.
If supporting pin comes off, the pin that renews of then having to.That is, the running of the base board sintering furnace of having to temporarily stop stops manufacturing line, decomposes bracing frame and from the base board sintering furnace taking-up, changes all supporting pins.In general, the bracing frame of base board sintering furnace is provided with the supporting bracket about 40 layers, and each layer is provided with the dozens of supporting pin.Therefore, a stylobate plate firing furnace will be changed hundreds of supporting pins, be difficult to calculate the required cost of replacing supporting pin.
Therefore, need a kind of technology that can access the supporting pin that has above durability of base board sintering furnace life-span (about 10-15) at least.
In the past, formed supporting pin (for example, having put down in writing the technology of making the wafer compacting parts by injection molding in the patent documentation 1) by injection molding.But in general injection molding, the moulding material heating is made when its plasticization, moulding material contacts with atmosphere.Therefore, the oxidized decomposition of the terminal groups on the surface of gained formed products in addition, becomes the state that portion's diffusion within it has oxygen.The thermo-labile decomposition of the terminal groups of oxidized decomposition is so owing to there is such terminal groups, the original oxidative resistance of moulding material, heat-resisting decomposability will reduce.That is, in the general injection molding in the past, can't apply flexibly the original durability of moulding material, can't at high temperature be had the supporting pin of abundant durability.
About this point, for example put down in writing in the patent documentation 2 when manufacturing is used to burn till the anchor clamps of electronic unit, obtain the technology of formed products by the vacuum injection molding.According to this technology,, can on the formed products surface, not produce oxidized part in a large number by under vacuum, carrying out injection molding.In addition, the structure about the device of realizing the vacuum injection molding for example is documented in the patent documentation 3.
The flat 11-163115 communique of [patent documentation 1] TOHKEMY
The flat 3-122043 communique of [patent documentation 2] TOHKEMY
The flat 5-318528 communique of [patent documentation 3] TOHKEMY
But, utilize the conventional art that obtains formed products by the vacuum injection molding, though can not produce oxidized part in a large number on the formed products surface, but the thermal decomposition of the part that takes place during by shaping, reactive abundant part can be exposed to the surface of formed products, thereby might begin to carry out oxidation Decomposition or thermal decomposition from these parts.That is,, then can access the high supporting pin of durability to a certain degree, but can't say that its durability is abundant if make supporting pin by the vacuum injection molding.
Summary of the invention
The present invention makes in view of the above problems, and its purpose is to provide a kind of method of making supporting pin, and this supporting pin is the supporting pin that the substrate that is implemented heat treated is supported, and thermal decomposition, oxidation Decomposition are had the height durability.In addition, purpose is the supporting pin that provides such.Further, purpose is to provide annealing device and the base board sintering furnace with such supporting pin.
Technical scheme 2 described inventions are in the manufacture method of technical scheme 1 described supporting pin, and said protection film forms operation to be had by the coating process of electrostatic powder coating to the surface of above-mentioned formed products spraying fluororesin powder.
Technical scheme 3 described inventions are in the manufacture method of technical scheme 1 or 2 described supporting pins, and said protection film forms operation to be had: the firing process that burns till the above-mentioned formed products that the surface covered by said protection film under the higher temperature of the heat treated temperature when using above-mentioned supporting pin.
Technical scheme 4 described inventions are in the manufacture method of technical scheme 1 described supporting pin, and above-mentioned resin material is the conductive poly ether ether ketone.
Technical scheme 5 described inventions are in the manufacture method of technical scheme 1 described supporting pin, and above-mentioned resin material is all aromatic polyimide resin.
Technical scheme 6 described inventions are a kind of supporting pins; this supporting pin is made by the manufacture method that has following injection molding operation and diaphragm and form the supporting pin of operation; wherein; be to be under the environment below the 10ppm in the concentration that contains of oxygen in the above-mentioned injection molding operation with resin material; injection molding is the operation that given pin shape obtains formed products, and it is to form the operation of fluorocarbon film as diaphragm on the surface of above-mentioned formed products that said protection film forms operation.
Technical scheme 7 described inventions are a kind of supporting pins that the substrate that is implemented heat treated is supported of being used for, and it has the main part that is formed by resin material and is coated on the lip-deep diaphragm of aforementioned body portion.
Technical scheme 8 described inventions are that said protection film is a fluorocarbon film in technical scheme 7 described supporting pins.
The invention effect
In the invention of technical scheme 1-5 record, be to carry out injection molding under the environment below the 10ppm to obtain formed products in the concentration that contains of oxygen and/or moisture, and form diaphragm on the surface of the formed products that is obtained.Even can make situation about using under the hot environment such when substrate is implemented heat treated thus, also be difficult to produce the supporting pin (being the durability height) of thermal decomposition or oxidation Decomposition.
Especially, in the invention that technical scheme 2 is put down in writing, fluororesin powder is sprayed on the surface of formed products, so can under short time and low cost, generate uniform diaphragm by electrostatic powder coating.
Especially, in the invention that technical scheme 3 is put down in writing, under the higher temperature of the heat treated temperature when using supporting pin, burn till the formed products that the protected film in surface covers, supporting pin can not outgas when therefore using.
The described supporting pin of invention that technical scheme 6 is put down in writing; the concentration that contains at oxygen and/or moisture is that the surface of the formed products that injection molding forms under the environment below the 10ppm is formed with diaphragm; even, also be difficult to produce thermal decomposition or oxidation Decomposition so under hot environment, use.Promptly has high-durability.
Technical scheme 7, the 8 described supporting pins of the invention of being put down in writing, the protected film of main part that is formed by resin material is covered, so even use, also be difficult to produce thermal decomposition or oxidation Decomposition under hot environment.Promptly has high-durability.
In the described annealing device of invention that technical scheme 9 is put down in writing, the supporting pin that the substrate that is implemented heat treated is supported has high-fire resistance, so need not to change supporting pin.
In the described base board sintering furnace of invention that technical scheme 10 is put down in writing, has high-fire resistance to being implemented the supporting pin that the substrate that burns till processing supports, so need not to change supporting pin.
Description of drawings
Fig. 1 is the profile of supporting pin.
Fig. 2 is the flow chart of the manufacturing process of expression supporting pin.
Fig. 3 is the approximate three-dimensional map of base board sintering furnace.
Fig. 4 is the transverse cross-sectional view of base board sintering furnace.
Fig. 5 is the longitudinal sectional drawing of base board sintering furnace.
Fig. 6 is the amplification stereogram of support component.
Fig. 7 A, Fig. 7 B are modal representation the come off figure of state of supporting pin in the past.
Embodiment
＜1, supporting pin 〉
The supporting pin 100 of embodiment of the present invention is described.Supporting pin 100 is to constitute the parts of substrate being carried out the substrate board treatment of various processing.Especially in the handling part of substrate being carried out heat treated (for example substrate is carried out and burnt till the base board sintering furnace 1 (with reference to figure 4) of processing), be applicable to the parts that support as to the substrate that is implemented heat treated.
As shown in Figure 1, supporting pin 100 has the fluorocarbon film as diaphragm (CFx film) 102 of main part 101 and lining main part 101.Fig. 1 is the sectional drawing of supporting pin 100.Manufacture method with reference to figure 2 these supporting pins 100 of explanation.But Fig. 2 is the flow chart of the manufacturing process of expression supporting pin 100.
When making supporting pin 100, under given environment, the moulding material of main part 101 penetrated form the main part 101 (step S1) that the pin shape forms supporting pin 100.So-called " given environment " is meant that the concentration that contains of oxygen and/or moisture is the following environment of 10ppm.
Wherein, the moulding material as main part 101 uses resin material.Especially preferably use conductivity PEEK (conductive poly ether ether ketone) or all aromatic polyimide resin (conductivity Vespel (registered trade mark: Dupont company)) for example.PEEK is the aromatic series plastics, has excellent high-fire resistance, drug resistance, wear-resistant, dimensional stability.In addition, processability is also good, can process by injection molding.In addition, all aromatic polyimide resin is super heat-resistant plastic, also has excellent high frictional property, drug-resistant.
The processing of step S1 is specifically carried out according to the following stated.That is, at first, will be adjusted into given environment (step S11) in the mould before the filling moulding material.More specifically, with having isolated oxygen (O
2) and moisture (H
2O) high-purity inert gas (for example nitrogen) replaces the environment in the mould, thus, makes the environment in the mould become oxygen (O
2) the concentration that contains be the following environment of 10ppm.Perhaps become moisture (H
2O) the concentration that contains is the following environment of 10ppm.Especially preferably become oxygen (O
2) and moisture (H
2O) the concentration that always contains is the following environment of 10ppm.
Then, heating makes its plasticization to the moulding material of supporting pin 100, by pressurizing unit with plasticization moulding material penetrate in the mould that is filled into (concentration that contains that is oxygen and/or moisture is the following environment of 10ppm) that become given environment (step S12).Plasticization material in mould, solidify, thus, obtain the formed products (being main part 101) of pin shape.Wherein, the plasticizing of moulding material is to carry out under the environment below the 10ppm in the concentration that contains of oxygen and/or moisture also.That is, not only when penetrating, prevent and the contacting of oxygen etc., when carrying out, also will prevent contacting of moulding material and oxygen etc. by plasticization.
In the processing of step S1, before packing material, making the concentration that contains that becomes oxygen and/or moisture in the mould in advance is the following environment of 10ppm, thus plasticization material be difficult to contact with oxygen or moisture.Therefore, material is difficult to oxidation during shaping.Therefore, the terminal groups that is exposed to formed products and is main part 101 surfaces is difficult to oxidation, and oxygen is difficult to be diffused into the inside of main part 101.Even can access thus to be exposed to and burn till the main part 101 that also is difficult to produce thermal decomposition or oxidation Decomposition under the such high temperature of treatment temperature.And then can obtain resistance to oxidation characteristic, supporting pin 100 that heat-resisting resolution characteristic is high.
Then, on the surface of the main part 101 that in step S1, obtains, by the fluorocarbon film 102 (step S2) of electrostatic powder coating formation as diaphragm.
The processing of step S2 is specific as follows described.That is, at first, to main part 101, the fluororesin powder that spraying is charged by applying voltage makes the surface (step S21) of fluororesin attached to main part 101.As fluororesin, for example use FEP system's (tetrafluoraoethylene-hexafluoropropylene copolymer) fluororesin or PFA system (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer) fluororesin.In addition, by changing static content, can be any thickness with the film thickness monitoring of the fluorocarbon film 102 that generated.Preferably controlling static content at this, to generate thickness be fluorocarbon film 102 more than the 20 μ m.
Then, the annealing in process surface attachment has the main part 101 (step S22) of fluororesin.More particularly, in given inert gas (for example nitrogen, argon gas, helium etc.), under preset time (preferred 20 minutes), given firing temperature, burn till the main part 101 that surface attachment has fluororesin.But, the heat treated temperature when this firing temperature is higher than the supporting pin 100 that uses manufacturing at least.Therefore, in order to obtain the higher supporting pin of versatility 100, preferably this firing temperature is higher than the maximum temperature (common about 300 ℃) in the temperature conditions of the heat treated of setting in various processing substrate technologies.Preferably under 380 ℃, burn till.
By the processing of step S2, formed fluorocarbon film 102 on the surface of main part 101.On the surface of the main part 101 that obtains by step S1, have the situation of under the effect of thermal decomposition, exposing the reactive part of enriching sometimes.Form fluorocarbon film 102 by surface, formed the diaphragm of the part that has been thermal decomposited on main body covered 101 surface at the main part 101 of this state.That is, by forming the fluorine film stronger than dioxygen oxidation ability on main part 101 surfaces, the surface of main part 101 becomes the state that is difficult to by further oxidation.Thus, can further improve the resistance to oxidation characteristic of supporting pin 100, heat-resisting resolution characteristic.
In addition, in the processing of step S2, make after fluororesin adheres to from the teeth outwards, annealing in process main part 101 can form strong fluorocarbon film 102 on the surface of main part 101 thus.In addition, by carrying out annealing in process, can distil and when main part 101 generates fluorocarbon films 102, result from not composition in the fluorocarbon film 102 (for example molecular weight diminish fluorine carbon).Thus, can further improve the durability of supporting pin 100.In addition, when supporting pin 100 being used for base board sintering furnace etc., can producing these and not want the phenomenon that composition is discharged from supporting pin 100 as the degassing, can prevent to result from the pollution of the processed substrate of the degassing.Especially, by under the temperature higher, burning till supporting pin 100, can prevent from when using supporting pin 100, to produce the degassing reliably than serviceability temperature.
In addition, by adopting the electrostatic powder coating method, can under short time and low cost, generate uniform fluorocarbon film 102 as the method that on main part 101, forms fluorocarbon film 102.
＜2, base board sintering furnace 〉
As mentioned above, supporting pin 100 is suitable for the parts that conduct is supported the substrate that is implemented heat treated.Then, the base board sintering furnace 1 that has as the supporting pin 100 of the parts that the substrate that is implemented heat treated is supported is described.
＜2-1, structure 〉
The structure of base board sintering furnace 1 is described with reference to figure 3-Fig. 5.Fig. 3 is the approximate three-dimensional map of the outward appearance of display base plate firing furnace 1.Fig. 4 is the view in transverse section (K1-K1 profile) of base board sintering furnace 1 shown in Figure 3.In addition, Fig. 5 is the longitdinal cross-section diagram (K2-K2 profile) of base board sintering furnace 1 shown in Figure 3.
Base board sintering furnace 1 comprises the box-shaped body of heater 10 with peristome and is used to stop up the air door (shutter) 30 of louvered of the peristome of body of heater 10.
＜i, body of heater internal structure 〉
Body of heater 10 is the frameworks that constitute the main body of base board sintering furnace 1, uses heat-insulating material to be shaped.Accommodate substrate accommodation section 11, heater 12, fan 13, heat-resisting HEPA filter 14 in the inside of body of heater 10.
On a face (medial surface S1) of body of heater 10 medial surfaces, be provided with heater 12 to the inner space of substrate accommodation section 11 V (hereinafter referred to as " burning till SPACE V ") supply heat.In addition, on another medial surface (medial surface S2), be provided with fan 13.In addition, between fan 13 and substrate accommodation section 11, insert and be provided with heat-resisting HEPA filter 14.That is, the air-flow in the body of heater 10 is circulated according to direction shown in the arrow A R1-AR4, can make the temperature of burning till in the SPACE V remain on the given treatment temperature of burning till equably by fan 13.In addition, fan 13 and heater 12 is out of position also passable.
＜substrate accommodation section 〉
On the interior back side T1 of the framework that constitutes substrate accommodation section 11, be fixed with the base end part of support component 111 in a plurality of stoves respectively.Support component 111 is with the substrate supporting member of cantilever position supporting substrate W in substrate accommodation section 11 in the stove.The length of the length direction of support component 111 in the stove as shown in Figure 4, has the length with the length same degree of the depth direction that is contained in the substrate W in the substrate accommodation section 11.
The medial surface T2, the T3 that constitute the framework of substrate accommodation section 11 are made of pressed sheet, are fixed with the base end part of a plurality of supplemental support parts 112 respectively.Supplemental support parts 112 are the support components that are used in substrate accommodation section 11 support component 111 substrate supported W in by stove are carried out supplemental support.The substrate plate that the length of the length direction of supplemental support parts 112 is with substrate is taken out of or moved into to relative base board sintering furnace 1 send the conveyance fork of device not produce the length of interference degrees.
At the same horizontal level of the interior back side T1 of substrate accommodation section 11, be fixed with the base end part of support component 111 (among Fig. 4 being 3) in a plurality of stoves.In addition, on the same horizontal level of medial surface T2, the T3 of substrate accommodation section 11, be fixed with the base end part of a plurality of supplemental support parts 112 (among Fig. 4 being 5) respectively respectively.The aggregate of having fixed these support components of this base end part on mutual same horizontal level provides in order to support same substrate W.That is, each is contained in a plurality of substrate W in the substrate accommodation section 11, as shown in Figure 5, and by the aggregate horizontal support that is fixed on the support component on the same horizontal level.
Further, as shown in Figure 5, on the interior back side T1 and medial surface T2, T3 of substrate accommodation section 11, along vertical direction, with the given aggregate that support component on the same horizontal level that is fixed on them that (frame spacing) d at interval is set with given number (simply slightly having changed among Fig. 5, in fact for example is about 40 layers) is set.Thus, substrate accommodation section 11 can will be held a plurality of by the substrate W of horizontal support respectively with multilayered state.
＜supporting pin 〉
Respectively in stove on support component 111 and the supplemental support parts 112, be placed on the parts at the back side of the substrate W on the support component 111,112 as support, be provided with a plurality of supporting pins 100.More particularly, as shown in Figure 6, on support component 111,112, to be formed with the patchhole K that is used to insert supporting pin 100 to determining deviation, on each patchhole K, insert and be provided with supporting pin 100, thus, on support component 111,112 so that a plurality of supporting pins 100 to be set to determining deviation.The concrete formation and the manufacture method thereof of supporting pin 100, as described below.
＜ii, the structure of opening the door 〉
Refer again to Fig. 3.Air door 30 has integral position control assembly 31 and a plurality of shield 32a, 32b, the 32c of the stacked placement of vertical direction on integral position control part 31.
Integral position control assembly 31 is provided with elevating mechanism (omitting among the figure), can carry out lifting at above-below direction (arrow A R5).Be installed in elevating mechanism on the integral position control assembly 31 by control, can one lifting integral position control assembly 31 and stacked a plurality of shield 32a, 32b, the 32c that is placed on it.
Further, on a plurality of shield 32a, 32b, 32c, be separately installed with elevating mechanism (omitting among the figure), each shield 32a, 32b, 32c (arrow A R6,7,8) lifting along the vertical direction.For example, be installed in elevating mechanism on the shield 32b, can make shield 32b and stacked shield 32a one lifting placed thereon by control.That is, be moved upward, can between shield 32c and shield 32b, form peristome Q (Fig. 5) by making shield 32b.
That is, by shield 32a, 32b, 32c and integral position control part 31 being carried out lifting control respectively, can form random layer in the sandwich construction with substrate accommodation section 11 relative to peristome.Thus, as shown in Figure 5, having the conveyance fork 24 that base board sintering furnace 1 is carried out the base board delivery device of taking out of or moving into (overall pattern omission) of substrate can visit (more particularly, taking-up is placed on the substrate W on the random layer, perhaps substrate W is placed on the random layer) random layer in the sandwich construction of substrate accommodation section 11.In addition, by the displacement of shield 32a, 32b, 32c suitably is set, can make the length of the vertical direction of formed peristome become appropriate value (more particularly, conveyance fork 24 can be inserted through minimum value) at the state that is placed with substrate W.
＜2-2, substrate burn till processing 〉
Substrate in the execution base board sintering furnace 1 as described below burns till processing.
At first, base board delivery device 1 is being carried out before substrate burns till processing, at first by heater 12 beginnings to burning till SPACE V supply heat, will burn till SPACE V and be warming up to and burn till treatment temperature (for example 300 ℃).
Burn till SPACE V be warming up to burn till treatment temperature after, begin to carry out the processing of burning till of substrate.That is, base board delivery device (omitting among the figure) begins substrate W is taken out of or moved into to base board sintering furnace 1.More particularly, base board delivery device is moved into untreatment base in the base board sintering furnace 1 by conveyance fork 24 (with reference to figure 5), and be placed in the given stove in the base board sintering furnace 1 on the support component 111, support simultaneously to be placed in the stove and burn till substrate that processing finishes (promptly on the support component 111, in base board sintering furnace 1, burnt till the substrate of preset time), it is taken out of in base board sintering furnace 1.Thus, a plurality of substrate W are carried out successively burn till processing.
＜3, effect 〉
The described supporting pin 100 of the foregoing description has the structure by fluorocarbon film 102 lining main parts 101, and this main part 101 is that the concentration that contains at oxygen and/or moisture is to be shaped by injection molding under the environment below the 10ppm.Therefore, even (for example base board sintering furnace 1 burns till in the SPACE V) uses under hot environment, also be difficult to produce thermal decomposition or oxidation Decomposition.It is the durability height.
In addition, the described base board sintering furnace 1 of above-mentioned execution mode, as to being implemented the parts that the substrate that burns till processing supports, has the high supporting pin of durability 100, so till life-span (about the 10-15) termination at least to general base board sintering furnace, the situation that supporting pin 100 comes off can not take place.That is, need not to change the parts of supporting substrate.Therefore, can not change the related cost of parts, stop production line in order to change parts and loss of causing etc.
＜4, variation 〉
In the above-described embodiment, on main part 101, generate fluorocarbon film 102 by electrostatic powder coating, but also can pass through hot CVD (chemical vapor deposition), plasma CVD (plasma excitation CVD (PECVD), plasma chemical chemical vapour deposition) generates fluorocarbon film 102 on main part 101.
In addition, in the above-described embodiment, the base board sintering furnace 1 with supporting pin 100 has been described, but supporting pin 100 also can be in the various devices beyond the base board sintering furnace 1, as the parts that support the substrate that is implemented heat treated.For example, can realize as the parts that support is implemented the substrate that oxide-diffused handles have the oxide-diffused stove of supporting pin 100, the parts that are implemented the substrate that CVD handles as support have the CVD stove of supporting pin 100, on its face, have supporting pin 100 heating plate (hotplate), stick and be used for supporting the base board delivery device etc. that is had supporting pin 100 by the parts of conveyance substrate as being installed in conveyance.No matter be used for any device, identical with aforesaid substrate firing furnace 1, because the parts of supporting substrate are the high supporting pins of durability 100, so need not to change the parts of supporting substrate, can produce and change the relevant cost of parts, in order to change that parts stop production line and the problems such as loss that cause.
Claims (8)
1. the manufacture method of a supporting pin, this supporting pin is used for the substrate that is implemented heat treated is supported, and it is characterized in that having:
The injection molding operation is that injection molding is that given pin shape obtains formed products under the environment below the 10ppm with resin material in the concentration that contains of oxygen;
Diaphragm forms operation, forms fluorocarbon film as diaphragm on the surface of above-mentioned formed products.
2. the manufacture method of supporting pin as claimed in claim 1 is characterized in that, said protection film forms operation to be had by the coating process of electrostatic powder coating to the surface of above-mentioned formed products spraying fluororesin powder.
3. as the manufacture method of supporting pin as described in claim 1 or 2; it is characterized in that; said protection film forms operation to be had: under the higher temperature of the heat treated temperature when using above-mentioned supporting pin, burn till the firing process of the above-mentioned formed products that the surface covered by said protection film.
4. the manufacture method of supporting pin as claimed in claim 1 is characterized in that, above-mentioned resin material is the conductive poly ether ether ketone.
5. the manufacture method of supporting pin as claimed in claim 1 is characterized in that, above-mentioned resin material is all aromatic polyimide resin.
6. supporting pin; it is characterized in that; form the manufacture method manufacturing of the supporting pin of operation by having injection molding operation and diaphragm; described injection molding operation is to be under the environment below the 10ppm with resin material in the concentration that contains of oxygen; injection molding is the operation that given pin shape obtains formed products, and it is to form the operation of fluorocarbon film as diaphragm on the surface of above-mentioned formed products that described diaphragm forms operation.
7. an annealing device is used for substrate is carried out heat treated, it is characterized in that,
Has the supporting pin that the aforesaid substrate that is implemented above-mentioned heat treated is supported;
Above-mentioned supporting pin is made by the manufacture method that has injection molding operation and diaphragm and form the supporting pin of operation,
Described injection molding operation is to be that injection molding is the operation that given pin shape obtains formed products under the environment below the 10ppm with resin material in the concentration that contains of oxygen,
It is to form the operation of fluorocarbon film as diaphragm on the surface of above-mentioned formed products that diaphragm forms operation.
8. base board sintering furnace is used for substrate carried out and burns till processing, it is characterized in that,
Have being implemented the supporting pin that the above-mentioned aforesaid substrate that burns till processing supports,
Above-mentioned supporting pin is made by the manufacture method that has injection molding operation and diaphragm and form the supporting pin of operation,
Described injection molding operation is to be that injection molding is the operation that given pin shape obtains formed products under the environment below the 10ppm with resin material in the concentration that contains of oxygen,
It is to form the operation of fluorocarbon film as diaphragm on the surface of above-mentioned formed products that diaphragm forms operation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007-109180 | 2007-04-18 | ||
| JP2007109180A JP4317883B2 (en) | 2007-04-18 | 2007-04-18 | Support pin manufacturing method, support pin, heat treatment apparatus, and substrate firing furnace |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101290902A CN101290902A (en) | 2008-10-22 |
| CN101290902B true CN101290902B (en) | 2011-01-12 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100933516A Expired - Fee Related CN101290902B (en) | 2007-04-18 | 2008-04-18 | Manufacturing method of support pin, support pin, heat treatment device and base board sintering furnace |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4317883B2 (en) |
| KR (1) | KR100976659B1 (en) |
| CN (1) | CN101290902B (en) |
| TW (1) | TW200908198A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101104201B1 (en) * | 2010-07-13 | 2012-01-10 | (주)에스엠텍 | Heat treatment apparatus for substrate |
| TWI600105B (en) * | 2011-02-01 | 2017-09-21 | 特艾希米控公司 | Boat for supporting substrate and support unit using the same |
| JP2014504039A (en) * | 2011-02-01 | 2014-02-13 | 株式会社テラセミコン | Substrate support boat and support unit using the same |
| JP5981986B2 (en) * | 2011-04-13 | 2016-08-31 | 株式会社テラセミコンＴｅｒａｓｅｍｉｃｏｎ Ｃｏｒｐｏｒａｔｉｏｎ | Support unit for substrate support |
| KR101310096B1 (en) * | 2011-04-29 | 2013-09-23 | 참엔지니어링(주) | Unit for supporting substrate and apparatus for treating substrate using the same |
| KR102446726B1 (en) | 2015-09-11 | 2022-09-26 | 삼성전자주식회사 | transparent plate and substrate processing apparatus |
| CN106894002A (en) * | 2017-03-31 | 2017-06-27 | 昆山国显光电有限公司 | A kind of PECVD film formation devices and its film build method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08279548A (en) * | 1993-12-28 | 1996-10-22 | Sharp Corp | Pin used for hot plate type proximity bake furnace and furnace using it |
| JP3822752B2 (en) * | 1998-06-05 | 2006-09-20 | 東京エレクトロン株式会社 | Processing equipment |
| JP3785036B2 (en) * | 2000-10-24 | 2006-06-14 | エスペック株式会社 | Loading device work receiving |
| KR20060063386A (en) * | 2004-12-07 | 2006-06-12 | 삼성전자주식회사 | Thin film manufacturing apparatus |
-
2007
- 2007-04-18 JP JP2007109180A patent/JP4317883B2/en not_active Expired - Fee Related
-
2008
- 2008-04-15 KR KR1020080034521A patent/KR100976659B1/en not_active IP Right Cessation
- 2008-04-15 TW TW097113688A patent/TW200908198A/en unknown
- 2008-04-18 CN CN2008100933516A patent/CN101290902B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| TW200908198A (en) | 2009-02-16 |
| CN101290902A (en) | 2008-10-22 |
| KR100976659B1 (en) | 2010-08-18 |
| JP2008270408A (en) | 2008-11-06 |
| JP4317883B2 (en) | 2009-08-19 |
| KR20080093889A (en) | 2008-10-22 |
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