CN1011823B - Dynamic life tester and quality analysis for semiconductor rectifying devices - Google Patents
Dynamic life tester and quality analysis for semiconductor rectifying devicesInfo
- Publication number
- CN1011823B CN1011823B CN 87104597 CN87104597A CN1011823B CN 1011823 B CN1011823 B CN 1011823B CN 87104597 CN87104597 CN 87104597 CN 87104597 A CN87104597 A CN 87104597A CN 1011823 B CN1011823 B CN 1011823B
- Authority
- CN
- China
- Prior art keywords
- test
- life
- dynamic
- durability test
- testing machine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Testing Electric Properties And Detecting Electric Faults (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Of Devices, Machine Parts, Or Other Structures Thereof (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The present invention discloses a dynamic life tester and a life estimation and quality evaluation method for a semiconductor rectifier, which can scientifically and exactly make the valuable analysis of a continuous life parameter of the rectifier. The present invention has the basic scheme that a dynamic test device of the rectifier is established under a standard condition; a service life evaluation function is obtained in monitoring the extraction of an IR parameter; accordingly, whether the rectifier passes a life test or not can be judged, and the service life of the passing rectifier can also be estimated. Thereby, compared with the existing life tests, the present invention has a practical value.
Description
The invention belongs to the analytical instrument of quality and the quality grading method thereof of the basic components and parts of semiconductor.Mainly relate under standard condition semiconductor rectifier device is carried out the technology and equipment that is applied in durability test or the burin-in process.
Semiconductor rectifier device is to be applied in modal key components in each electronic product, also is consumable accessory.Therefore, its quality quality, life-span length directly have influence on the quality and prestige of complete machine.Thereby all there is strict requirement in the factory of complete machine factory and components and parts to its life parameter from different angles.Especially batch number conversion, technique change or complete machine operating mode all need to take a sample test its each time index, particularly life estimate by certain standard when adjusting.
At present, the test method of generally taking both at home and abroad is that rectifier is arranged under the standard condition, and the high-frequency and high-voltage silicon stack that for example is used on the televisor promptly is to install on the actual TV machine, allows its continuous working.In process of the test, only monitor the variation of its test condition.Reach agreement the time provide the judgement of " inefficacy " or " qualified " according to actual conditions behind the number.Draw the durability test qualification rate at last.This class is tested and the existing defective of quality evaluating method is, does not understand mass change process and rule take place in the durability test, also can't correctly assess the possible lifetime limitation of those what is called " qualified " product.Those might be it seems that the qualified product that has reached lifetime limitation in fact thinks high-quality product.
The objective of the invention is to conceive a kind of dynamic parameter of utilizing
R carries out durability test and can evaluate the method for its true lifetime and according to the designed life test apparatus of this method, thereby makes durability test for producing product and using factory that reference data more reliably is provided.
The present invention is based upon the dynamically reverse average current that the inventor proposes
On the R theoretical foundation, its detailed content can be consulted patent of invention 85107867 " semiconductor rectifier device kinetic analyzer and mass analysis method thereof ".Involved in the present invention to method be according in the actual life test, under typical condition to dynamic reverse average current
The monitor value of R and and maximum permissible value
The Rm comparative result designs, and it is conceived substantially in conjunction with Fig. 1, Fig. 2 and describes.
Job step and groundwork program that Fig. 1 relates to for this method.
Fig. 2 is what three samples of certain batch of components and parts (A, B, C) were surveyed and drawn when carrying out durability test
The R-t(time) curve.
As can be seen from Figure 2, at t=240H, during environment temperature Ta=Ta1, test specimen A had just lost efficacy.At T=480H, increased temperature stress.Remaining two of Ta=Ta2 continues to accept the time test.When now limitting 960H when reaching durability test, test specimen B, C all can think and passed through durability test.But can find out obviously that from curve though test specimen B has passed through durability test whole process, it was apart from losing efficacy within sight, just may can't pass durability test if the longer again or test condition stress of test life time strengthens a bit again.Test specimen C then has very big difference, and its characteristic curve is steady, during off-test
The R final value also has very big surplus from stale value, and two test specimens are compared certainly qualitatively, and very big difference is especially arranged on the life-span.In addition, as can be seen from Figure 2 the rule of each curve performance is not quite similar, and the process data processing can obtain the respective function of each device, so also just is not difficult to reach according to its rule in end-of-life test back
The R final value is calculated the actual life of its continuous working.For example test specimen B infers with exponential function exactly, and test specimen C infers with the near linear function that then then its life estimate can more accurately be obtained, and can estimate the quality grade of product in view of the above.
Fig. 1 has promptly provided the working routine block diagram of this method.Working routine can be three parts, and wherein the M of first is its dynamically reverse average current of monitoring in the durability test process
The value of R, it comprises sets up the exemplary operation environment, and measured device is set, and extracts online by related circuit
The R value, and according to
The R data processing is
The R-t relation curve.Second portion is the differentiation process, extremely now limits parameter according to what set
Rm is to what extract at any time
R compares, if find
The R value transfinites and is judged to inefficacy at once, promptly is judged to and does not pass through durability test.Do not transfinite yet during the schedule time if reach durability test, then be judged to and pass through durability test.Third part is that life parameter is calculated and quality grading.Comprising groundwork be will be by the test specimen of test
The R-t curve processing has functional relation, when finishing according to durability test again
The R final value is calculated its continuous working life-span, and in view of the above product classification is defined the level.Above method will guarantee the quality of product effectively, and obtain its valuable technical reference in test process.
The present invention has designed dynamic life tester according to above method.Its working routine is basic with reference to above method.Further specify below in conjunction with accompanying drawing and the objective of the invention is how to realize:
Fig. 3 is the structure principle chart of this machine.
As seen from Figure 3, the present invention can be made up of a plurality of stations.Only provided the concrete structure of one of them station among this figure.It comprises one can be public oscillator 1, operating mode is provided with part 2, dynamically oppositely average current
The extraction circuit 3 of R, microcomputer controller 4, outer pen recorder 5 and supporting power supply 6 are formed.The effect of oscillator 1 provides the first-harmonic of the used power supply of test, for example: when operating mode should be a sine-wave generator during for sine power supply.General to the different model rectifying device for guaranteeing, the frequency of oscillator and waveform are made adjustable.Oscillator signal f sends into operating mode and sets up the supply voltage V that the input end excitation of the power amplifier 21 in the part 4 produces gesture test usefulness, and it is received the positive terminal of the examination components and parts D of institute in the constant temperature oven 22.This part also is provided with radiator valve 23, by detection and the feedback components and parts of sensor element L as environment temperature Ta.The measured device negative pole is connected to
R extracts the dynamic of circuit 3
Extract dynamic parameter by it on the Ra electric bridge
The voltage signal of R.This signal and other coherent signal are sent in the microcomputer controller 4.Microcomputer controller comprises A/D translation interface 41, and micro computer or single-chip microcomputer are the data processing unit 42 of main body, output interface 43.It will be under software control to after the data processing of gathering by the Output Interface Control printer, or other outer pen recorder 5 is noted tested components and parts
The R-t curve.Through software processes can from continuous monitoring to
The approximate type of obtaining the function of curve correspondence in the R data.Outer pen recorder 5 can adopt plotomat or other type.
The signal that is input in the computing machine comprises temperature signal Ta, load voltage signal Vu, load current signal IL, power supply voltage signal Ve, frequency signal f.
For making system works normal, be provided with special-purpose power supply and crash handling software in the dynamic testing machine.The flow chart of inefficacy software can be referring to Fig. 4, and its action is: if actual measurement under the normal situation of power supply
The R value has surpassed
RM just is judged to be short circuit and lost efficacy, and surveys
The R value then is judged to be open failure when being lower than a certain lower limit, can end test job automatically under the above situation.
The life test machine that arrives involved in the present invention if consider to strengthen a certain parameter stress, then can be used as the burin-in process machine simultaneously when setting up operating mode.Its monitor procedure is also identical, the standard of different the is actual test time reference aging technique that components and parts experience.
Because the method and apparatus of durability test proposed by the invention can judge not only whether device can pass through durability test, and can also provide the life-span projection value of good devices, thereby science is made evaluation to the quality of device exactly more, factory and use factory all there is very high use value, it can guarantee higher last machine qualification rate in the actual tests, thereby it is a kind of desirable durability test scheme, to the electronic industrial products production domesticization with improve the quality certain effect is all arranged.
Claims (7)
1, a kind of semiconductor rectifier device dynamic life tester is characterized in that testing machine sets up part 2, dynamic oppositely average current by oscillator 1, operating mode
R extracts circuit 3, microcomputer controller 4, pen recorder 5 and supporting power supply 6 and forms, wherein oscillator 1 is the oscillation generating circuit of frequency adjustable, its oscillator signal is delivered to operating mode and is set up power amplification circuit 21 in the part 2, is added on the positive pole of detected element D after amplifying.
2,, it is characterized in that operating mode sets up part 2 and comprise a power amplification circuit 21, constant temperature test box 22 and radiator valve 23 according to the said testing machine of claim 1.
3, testing machine according to claim 1 is characterized in that it is a dynamic electric bridge that IR extracts circuit, extraction
The R parameter is sent into the A/D translation interface 41 in the microcomputer controller.
4, according to the said testing machine of claim 1, it is characterized in that comprising in the microcomputer controller 4 an A/D interface 41, micro computer or single-chip microcomputer administrative unit 42, its output control interface 43 links to each other with outer pen recorder 5.
5, according to claim 1 or 4 said testing machines, it is characterized in that pen recorder 5 is draught machines, it is drawn out under computer management software control dynamically
The relation curve of R and time t.
6,, when it is characterized in that strengthening operating mode and setting up certain test condition of part, can use as the dynamic aging machine according to the said testing machine of claim 1.
7, a kind of semiconductor rectifier device is carried out the method for durability test and quality grading, it is characterized in that the step of durability test and quality grading is as follows:
A. utilize dynamically reverse average current as the said testing machine monitoring of claim 1 rectifying device
The Changing Pattern of R value comprising setting up operating mode by the online condition of device, is provided with detected element, extracts
The R parameter also is treated as according to measured data
The R-t curve.
B. according to the absolute rating that sets
Rm is to extracting at any time
The R value compares, if find
The R value transfinites and judges inefficacy at once, promptly is judged to the end by durability test, if reach test life time
The R value is not transfinite then for passing through durability test.
C. test specimen that will be by durability test
The R-t curve processing becomes funtcional relationship, and the IR final value during according to off-test is calculated its continuous working life-span, and according to this product classification is defined the level.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87104597 CN1011823B (en) | 1987-07-01 | 1987-07-01 | Dynamic life tester and quality analysis for semiconductor rectifying devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 87104597 CN1011823B (en) | 1987-07-01 | 1987-07-01 | Dynamic life tester and quality analysis for semiconductor rectifying devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1030301A CN1030301A (en) | 1989-01-11 |
| CN1011823B true CN1011823B (en) | 1991-02-27 |
Family
ID=4814940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 87104597 Expired CN1011823B (en) | 1987-07-01 | 1987-07-01 | Dynamic life tester and quality analysis for semiconductor rectifying devices |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1011823B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102831019B (en) * | 2005-12-30 | 2016-03-30 | 英特尔公司 | The dynamic estimation in the life-span of semiconductor devices |
| CN101452044B (en) * | 2007-12-07 | 2011-01-26 | 财团法人工业技术研究院 | LED life test apparatus and method |
| CN101694509B (en) * | 2009-10-16 | 2012-07-04 | 江苏达胜加速器制造有限公司 | Reverse characteristic test device of silicon rectifier stack and operation method thereof |
-
1987
- 1987-07-01 CN CN 87104597 patent/CN1011823B/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CN1030301A (en) | 1989-01-11 |
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