CN101102638A - COF flexible printed wiring board and manufacturing method for the same - Google Patents

COF flexible printed wiring board and manufacturing method for the same Download PDF

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Publication number
CN101102638A
CN101102638A CNA2007101085242A CN200710108524A CN101102638A CN 101102638 A CN101102638 A CN 101102638A CN A2007101085242 A CNA2007101085242 A CN A2007101085242A CN 200710108524 A CN200710108524 A CN 200710108524A CN 101102638 A CN101102638 A CN 101102638A
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China
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layer
wiring board
flexible printed
printed wiring
c0f
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CNA2007101085242A
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Chinese (zh)
Inventor
坂田贤
林克彦
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三井金属矿业株式会社
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Priority to JP2002-068500 priority Critical
Priority to JP2002068500 priority
Priority to JP2002-319297 priority
Priority to JP2002-321853 priority
Priority to JP2002-358565 priority
Application filed by 三井金属矿业株式会社 filed Critical 三井金属矿业株式会社
Priority to CN03119617.9 priority
Publication of CN101102638A publication Critical patent/CN101102638A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

Provision of a releasing layer transfer film which can form, in a simple manner, a releasing layer on a COF flexible printed wiring board, the releasing layer preventing melt adhesion of an insulating layer to a heating tool, thereby enhancing productivity and reliability of semiconductor devices produced by use of a semiconductor chip mounting line.

Description

COF柔性印刷线路板及制造该线路板的方法 COF flexible printed wiring board and a method of manufacturing the wiring board

本专利申请为发明名称:COF柔性印刷线路板及制造该线路板的方法、申请日:2003年3月13日、申请号:03119617.9的分案申请。 This patent application is a Title: the COF flexible printed wiring board and a manufacturing method of the wiring board, filing date: March 13, 2003, application number: 03119617.9 the divisional application.

技术领域 FIELD

本发明涉及COF (chip-on-film)柔性印刷线路板,例如用于在其上安装电子器件如集成电路(IC)和大规模集成电路(LSI)的COF型薄膜载体带或COF型柔性印刷电路(FPC)。 The present invention relates to a COF (chip-on-film) of the flexible printed wiring board, for example, an electronic device mounted thereon, such as integrated circuit (IC) and large scale integrated circuit (LSI) of the film carrier tape or a COF COF type flexographic printing circuit (FPC). 本发明还涉及该COF柔性印刷线路板的制造方法。 The present invention further relates to a method of manufacturing the COF flexible printed wiring board. 术语"COF柔性印刷线路板"指的是在其上面将要安装电子器件(芯片)的柔性印刷线路板。 The term "the COF flexible printed wiring board" refers to be mounted thereon electronic parts (chips) flexible printed wiring board. 术语"COF薄膜载体带" 指的是在其上面将要安装电子器件(芯片)的设计为带状的薄膜基底。 The term "the COF film carrier tape" refers to a strip of the film substrate on which an electronic device designed to be mounted (chip).

背景技术 Background technique

电子工业的发展伴随着对用于在其上面安装电子器件(例如IC和LSI)的印刷电路板需求的急剧增加。 With the development of electronic industry have increased dramatically thereon to a printed circuit board mounting electronic components needs (such as an IC and LSI) is. 制造商试图制造出长时间为人们期待的尺寸小、重量轻和高性能的电子设备。 Manufacturers try to create a little time for people looking for size, light weight and high-performance electronic devices. 为此,目前制造商想起应用薄膜载体带,例如自动粘接带(TAB)、球栅阵列带(T-BGA)、专用集成电路(ASIC)带或柔性印刷电路(FPC)。 For this reason, manufacturers now think application of the film carrier tape, such as an automatic adhesive tape (the TAB), tape ball grid array (T-BGA), application specific integrated circuit (ASIC), or with a flexible printed circuit (FPC). 使用用于在其上面安装电子器件的薄膜载体带已经日益变得更加重要,特别是对于个人电脑、移动电话和其他应用液晶显示(LCD)电子设备的制造商,这些设备必须具有高的分辨率和平整度,而且要具有窄的屏幕框架面积。 Used for mounting electronic devices thereon a film carrier tape has become increasingly more important, especially for personal computers, mobile phones and other applications LCD manufacturer (LCD) of the electronic device, these devices must have a high resolution and flatness, but also to a narrow area of ​​the screen frame.

另外,为了在比较狭窄的空间里实现高密度的安装,应用了直接在柔性印刷线路板上安装裸IC芯片的安装方法。 Further, in order to achieve a high density mounting in a relatively small space, the application of a method of mounting bare IC chip is mounted directly on the flexible printed wiring board. 这样的产品就叫做COF (芯片在薄膜上)。 This product is called COF (chip on film).

由于用做COF基底的柔性印刷线路板不具备器件孔,就使用一种预先把导体层和绝缘层层合在一起得到的叠层膜作为柔性印刷线路板。 Since the substrate used COF flexible printed wiring board do not have the device hole, it is the use of a pre-conductor and insulating layers laminated together in a laminated film as a flexible printed wiring board obtained. 当在线路图案上直接安装IC芯片时,要在标记,例如内引线和透过绝缘层可以看见的定位标记的基础上进行定位,然后借助于加热工具把IC芯片和电路图案,即内引线连接起来(参见例如日本专利申请 When the IC chip is mounted directly on the circuit pattern, to the tag, for example, lead and positioned within the base insulating layer can be seen through the positioning mark, and then by means of a heating tool the IC chip and the circuit pattern, i.e., the inner lead connecting up (see, for example, Japanese Patent application

未决公开(公开)2002-289,651,图4 - 6和第[0004]和[0005]段)。 Laid-Open 2002-289,651, FIG. 4 (Publication) - [0004] [0005] and paragraph and 6).

当安装这样的半导体芯片时,绝缘层直接与加热工具相接触。 When mounting such a semiconductor chip, the insulating layer is in direct contact with heating means. 在安装的过程中,由于加热使绝缘层被加热到相当高的温度, 一部分绝缘层就会因熔融而粘到加热工具上,由此引起生产装置停止运行。 During installation, since the heat insulating layer is heated to a relatively high temperature, because a part of the insulating layer will be melted and adhered to the heating means, thereby causing the production apparatus is stopped. 此外,载体带还会发生不希望的变形。 Further, the carrier tape unwanted deformation will occur. 在绝缘层熔融而粘接到加热工具上的情况下,加热工具受到污染,因此可靠性和生产率都变差。 In the case where the insulating layer melt adhered to the heating tool, a heating tool to be contaminated, so reliability and productivity are deteriorated.

当把半导体芯片安装到COF薄膜载体带或不具备器件孔的COF型FPC上时,这种熔体对加热工具的粘接就是很关键的。 When the semiconductor chip is mounted on a film carrier tape or a COF COF type FPC devices without holes when melt adhesive of this heating means it is critical.

发明内容 SUMMARY

考虑到上述的问题,本发明的目的是提供一种COF柔性印刷线路板,其绝缘层不会熔融粘接到加热工具上,因而提高了半导体安装线的可靠性和生产率。 View of the above problems, an object of the present invention is to provide a COF flexible printed wiring board, the insulating layer which does not melt bonded to the heating tool, thereby improving the reliability and productivity of the semiconductor mounting line. 本发明的另一个目的是提供一种COF柔性印刷线路板的制造方法。 Another object of the present invention is to provide a method for manufacturing a flexible printed wiring board COF.

因此,在本发明的第一方面,提供一种COF柔性印刷线路板,该线路板包括绝缘层和在其上面将要安装半导体芯片布线图案(wiring pattern),而且由在该绝缘层的至少一侧上提供的导体层形成,和隔离层(releasing layer),其中该隔离层由含有至少一种选自硅垸化合物和硅溶胶化合物的隔离剂形成,而且被提供在绝缘层的表面,该表面与半导体芯片的安装侧相对。 Thus, in a first aspect of the present invention, there is provided a COF flexible printed wiring board, the wiring board comprising an insulating layer and thereon a semiconductor chip is mounted to a wiring pattern (wiring pattern), and the at least one side of the insulating layer forming a conductor layer provided thereon, and the isolation layer (releasing layer), wherein the spacer layer containing at least one compound selected from a release agent and a silica sol embankment silicon compound is formed, and is provided in the surface of the insulating layer, and the surface opposite side of the semiconductor chip is mounted.

由于使用了按照此第一方面的COF柔性印刷线路板,在安装半导体芯片的过程中,隔离层与加热工具直接接触。 Due to the use according to the COF flexible printed wiring board of this first aspect, the process of mounting the semiconductor chip, the barrier layer is in direct contact with the heating means. 因此,就不会发生绝缘层和加热工具之间的熔融粘接,由此就避免了由于绝缘层熔融粘接而引起的加热工具的污染。 Thus, the fusion bonding between the insulating layer and the heating tool does not occur, thereby avoiding contamination of the heating tool since the insulating layer caused by fusion bonding.

在本发明的第二方面,可由含有硅氮烷化合物的隔离剂形成此隔禺层。 In a second aspect of the present invention, the release agent may contain silazane compound is formed in this spacer layer Yu.

通过采用按照此第二方面的上述结构,由含有硅氮烷化合物(即硅垸型化合物)的聚硅氧烷系列隔离剂形成隔离层,就能够可靠地防止熔融粘接。 According to the above configuration of this second aspect, the isolation layer is formed by a series of silicone release agent-containing silazane compound (i.e., a silicon compound embankment) by using, it is possible to reliably prevent fusion bonding.

在本发明的第三方面,可通过在绝缘层上涂布含有隔离剂的溶液并加热来形成隔离层。 In a third aspect of the present invention, the insulating layer by applying a solution containing a release agent, and heated to form a release layer.

通过采用按照此第三方面的上述结构,通过涂布的方法形成了上述隔离层,可以可靠地防止熔融粘接。 According to the above structure of this third aspect, formed by a coating method by using the above-described release layer, fusion bonding can be reliably prevented.

在本发明的第四方面,通过把在转移薄膜基底上提供的隔离层转移的方法来形成隔离层。 In a fourth aspect of the present invention, the isolation layer is formed by the process of the transfer film provided on the base insulating layer transfer.

通过采用按照此第四方面的上述结构,通过转移的方法可以很容易地形成上述隔离层。 According to the above structure of this fourth aspect, the separator layer can be easily formed by using the method by transfer.

在本发明的第五方面,可通过在导体层上涂布含有聚酰亚胺前体树脂的溶液、使该溶液干燥并和使该树脂固化的方法形成绝缘层。 In a fifth aspect of the present invention, on the conductor layer by applying a solution containing a polyimide precursor resin solution, and the solution is dried and curing the resin forming method of the insulating layer.

通过采用按照此第五方面的上述结构,用上述方法形成绝缘层, 可得到具有由聚酰亚胺形成的绝缘层的COF柔性印刷线路板。 According to the above structure of this fifth aspect, the insulating layer is formed by using the above method, to obtain COF flexible printed wiring board having an insulating layer formed of a polyimide.

在本发明的第六方面,该绝缘层可由包括绝缘薄膜和热塑性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In a sixth aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermoplastic resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过应用按照此第六方面的上述实施方案,该绝缘层是在导体层上由热塑性树脂层和绝缘薄膜形成。 According to the above embodiment of the sixth aspect of this embodiment, the insulating layer is formed of a thermoplastic resin layer and the insulating film on the conductor layer by the application.

在本发明的第七方面,该绝缘层可由包括绝缘薄膜和热固性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In a seventh aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermosetting resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过应用按照此第七方面的上述实施方案,该绝缘层是在导体层上由热固性树脂层和绝缘薄膜形成。 According to the above embodiment of the seventh aspect of this embodiment, the insulating layer is formed of a thermosetting resin layer and the insulating film on the conductor layer by the application.

在本发明的第八方面,该导体层可包括溅镀在绝缘层上的粘接改进层,和在此粘接改进层上提供的镀铜层。 In an eighth aspect of the present invention, the conductive layer may comprise an adhesive layer to improve sputtering on the insulating layer, and a copper plating layer on this adhesive layer provides improved.

通过应用按照此第八方面的此种操作,在绝缘层上由粘接改进层(例如镍)和镀铜层构成该导体层。 By applying such procedures in accordance with this eighth aspect, the conductive layer on the insulating layer formed of an adhesive-improving layer (e.g., nickel) and a copper plating layer.

在本发明的第九方面,提供一种COF柔性印刷线路板的制造方法, 此线路板包括一个绝缘层和在其上面将要安装半导体芯片的布线图案,通过对在该绝缘层的至少一侧上提供的导体层进行光刻形成此布线图案,该制造方法包括:通过光刻在导体层上形成图案,借此形成布线图案,随后在绝缘层的与安装半导体芯片的一侧正好相对的表面上形成隔离层。 In a ninth aspect of the present invention, there is provided a method of manufacturing a COF flexible printed wiring board, the wiring board comprising an insulating layer and a wiring pattern on which the semiconductor chip is to be mounted, at least on one side by the insulating layer, a conductor layer provided by this wiring pattern is formed by photolithography, the method comprising: forming by photolithography on the conductor layer pattern, thereby forming the wiring pattern, and then just the opposite surface side of the insulating layer and mounting a semiconductor chip forming an isolation layer.

通过采用按照此第九方面的制造COF柔性印刷线路板的方法,在安装半导体芯片的过程中,在完成光刻牢固地形成的隔离层在安装半导体芯片的过程中与加热工具相接触。 By using this manufacturing method according to a ninth aspect of the COF flexible printed wiring board, in the process of mounting the semiconductor chip, the spacer layer is firmly formed in the photolithography process to complete the semiconductor chip is mounted in contact with the heating means. 因此,此隔离层与加热工具不发生粘结,从而避免了由绝缘层的熔融粘结引起加热工具的污染。 Thus, the spacer layer and the heating means bonding does not occur, thereby preventing contamination caused by the fusion bonding of the insulating layer of the heating tool.

在本发明的第十方面,该隔离层含有聚硅氧垸系列化合物。 In a tenth aspect of the present invention, the release layer comprises a silicone-based compound embankment.

通过采用按照此第十方面的方法,将要与加热工具接触的隔离剂是聚硅氧垸系列的隔离剂,可靠地避免了熔融粘接或类似的现象。 By using this method according to the tenth aspect, the release agent will be in contact with the heating means is a series of silicone release agent embankment, reliably prevents fusion bonding or the like phenomenon.

在本发明的第十一方面,可以由含有至少一种选自硅氧烷化合物、 硅烷化合物和二氧化硅溶胶的隔离剂形成隔离层。 In an eleventh aspect of the present invention, containing at least one selected from silicone compounds, silane compounds and silica sol release agent to form an isolation layer.

通过应用按照此第十一方面的方法,由含有硅氧垸化合物、硅烷化合物或二氧化硅溶胶的隔离剂形成将要与加热工具接触的隔离层, 可靠地避免了熔融粘接或类似的现象。 The method of this eleventh aspect, the isolation layer to be in contact with the heating means is formed by a release agent comprising a silicone compound embankment, the silane compound or silica sol by applying, reliably prevents fusion bonding or the like phenomenon.

在本发明的第十二方面,形成隔离层的方法可包括涂布含有隔离剂的溶液以及加热。 In a twelfth aspect of the method of the present invention, it may include forming an isolation layer, and heating the coated solution containing a release agent.

通过采用按照此第十二方面的方法,通过涂布隔离剂和可选则地加热形成隔离层。 The method of this twelfth aspect, the heat release layer is formed by coating a release agent, and optionally by using.

在本发明的第十三方面,可以在除去用于形成布线图案的抗蚀剂掩膜以后的任何时候来形成隔离层。 In a thirteenth aspect of the present invention, the isolation layer may be formed at any time after forming the resist mask for a wiring pattern is removed.

通过采用按照此第十三方面的方法,在光刻后形成隔离层,因此此隔离层不溶解于光刻胶去除剂或类似液体,借此达到有效的隔离效果。 The method of this thirteenth aspect, the isolation layer is formed by using photolithography, so the spacer layer is not dissolved in a liquid photoresist stripper or the like, thereby to achieve effective isolation.

在本发明的第十四方面,可通过在导体层上涂布含有聚酰亚胺前体树脂的溶液、干燥此溶液并使树脂固化来形成绝缘层。 In a fourteenth aspect of the present invention, on the conductor layer by applying a solution containing a polyimide resin precursor solution, the solution was dried and cured to form the resin insulating layer.

通过采用此第十四方面的上述实施方案,可提供具有由聚酰亚胺 By using the above-described embodiments of this fourteenth aspect, it may be provided having a polyimide

形成的绝缘层的COF柔性印刷线路板。 COF flexible printed wiring board is formed in the insulating layer.

在本发明的第十五方面,该绝缘层可由包括绝缘薄膜和热塑性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In a fifteenth aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermoplastic resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过应用此第十五方面的上述实施方案,该绝缘层是在该导体层上由热塑性树脂层和绝缘薄膜形成。 By applying the above fifteenth aspect of this embodiment, the insulating layer is formed of a thermoplastic resin layer and the insulating film on the conductive layer.

在本发明的第十六方面,该绝缘层可由包括绝缘薄膜和热固性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In a sixteenth aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermosetting resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过应用此第十六方面的上述实施方案,该绝缘层是在该导体层上由热固性树脂层和绝缘薄膜形成。 By applying the above sixteenth aspect of this embodiment, the insulating layer is formed of a thermosetting resin layer and the insulating film on the conductive layer.

在本发明的第十七方面,该导体层可包括在绝缘层上溅镀的粘接改进层,和在该粘接改进层上提供的一个镀铜层。 In a seventeenth aspect of the present invention, the conductive layer on the insulating layer may comprise a sputtered adhesion improving layer, and a copper plating layer provided on the adhesive layer is improved.

通过采用此第十七方面的上述实施方案,该导体层是在该绝缘层 By using the above seventeenth aspect of this embodiment, the conductive layer is the insulating layer

上由粘接改进层(例如镍)和镀铜层形成。 (E.g., nickel) and the plating layer formed of the adhesive improving layer.

在本发明的第十八方面,提供一种生产COF柔性印刷线路板的方法,该印刷线路板包括绝缘层和在其上面将要安装半导体芯片的布线图案,该布线图案由在该绝缘层的至少一侧上提供的导体层形成,该方法包括在导体层上形成图案以形成布线图案,以及将在薄膜基底上形成的隔离层进行转移以转移到绝缘层表面,该绝缘层的表面与安装半导体芯片的一侧相对。 In an eighteenth aspect of the present invention, there is provided a method for producing a COF flexible printed wiring board, the printed wiring board comprising an insulating layer and to be mounted thereon a wiring pattern of the semiconductor chip, the wiring pattern is formed in the insulating layer at least a conductor layer provided on one side is formed, the method comprising forming a pattern on the conductor layer to form a wiring pattern, and an isolation layer formed on the film substrate is transferred to the surface of the insulating layer is transferred to the mounting surface of the insulating layer of the semiconductor opposite side of the chip.

通过采用此第十八方面的制造COF柔性印刷线路板的方法,通过转移的方法,比较容易地形成隔离层,而在安装半导体芯片的过程中, 此隔离层与加热工具相接触。 By the method of manufacturing a COF flexible printed wiring board using this eighteenth aspect, by a method of transferring relatively easily isolation layer is formed, and in the process of mounting the semiconductor chip, the spacer layer is in contact with the heating means. 因此不会发生隔离层与加热工具或操纵台粘接的现象,借此就避免了由于绝缘层熔融粘接所造成的加热工具的污染。 Thus the phenomenon of heating means or console adhesive barrier layer does not occur, thereby avoiding contamination of the heating tool since the insulating layer caused by fusion bonding.

在本发明的第十九方面,该隔离剂可含有聚硅氧烷系列化合物。 In a nineteenth aspect of the present invention, the release agent may comprise a silicone-based compound. 通过采用此第十九方面的方法,在将要与加热工具接触的隔离层 By employing this method of the nineteenth aspect, in the spacer layer to be in contact with the heating means

包含有聚硅氧垸系列化合物以后,可以可靠地避免熔融粘接或类似的现象。 Embankment comprising a silicone compound series later, can be reliably avoided fusion bonding or the like phenomenon.

在本发明的第二十方面,该隔离层可由含有至少一种选自聚硅氧烷化合物、硅烷化合物和二氧化硅溶胶化合物的隔离剂形成。 In a twentieth aspect of the present invention, the spacer layer may be at least one selected from the group comprising a silicone compound, a release agent and a silica sol silane compound forming compound.

通过采用此第二十方面的方法,由含有聚硅氧烷化合物、硅烷化合物或二氧化硅溶胶的隔离剂形成将要与加热工具相接触的隔离层, 能够可靠地避免熔融粘接或类似的现象。 By employing this method of the twentieth aspect, the isolation layer to be in contact with the heating means is formed by a release agent comprising a silicone compound, a silane compound or silica sol, can be reliably avoided fusion bonding or the like phenomenon .

在本发明的第二十一方面,可通过涂布含有聚酰亚胺前体树脂的溶液、干燥该溶液并固化该树脂形成该绝缘层。 In the twenty-first aspect of the present invention, the polyimide precursor solution may contain resin by coating, drying the solution and curing the resin of the insulating layer.

通过采用此第二十一方面的上述实施方案,可提供具有由聚酰亚 By using the above-described embodiments of this twenty-first aspect can be provided having a polyimide

胺形成的绝缘层的COF柔性印刷线路板。 COF flexible printed wiring board of insulating layer formed amines.

在本发明的第二十二方面,该绝缘层可由包括绝缘薄膜和热塑性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In a twenty-second aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermoplastic resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过采用此第二十二方面的上述实施方案,在该导体层上由热塑性树脂层和绝缘薄膜形成该绝缘层。 By using the above-described embodiments of the second aspect of this embodiment, the conductive layer on the insulating layer is formed from a thermoplastic resin layer and the insulating film.

在本发明的第二十三方面,该绝缘层可由包括绝缘薄膜和热固性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层上。 In the twenty-third aspect of the present invention, the insulating layer may be a layer structure comprising an insulating film and a thermosetting resin composition layer, wherein the structure is hot - pressed - adhered on the conductive layer.

通过应用此第二十三方面的上述实施方案,在该导体层上由热固性树脂层和绝缘薄膜形成绝缘层。 By applying the above-described embodiments of this twenty-third aspect, the conductive layer on the insulating layer formed of a thermosetting resin layer and the insulating film.

在本发明的第二十四方面,该导体层可包括在该绝缘层上溅镀的粘接改进层,和在该粘接改进层上提供的镀铜层。 In the twenty-fourth aspect of the present invention, the conductive layer may be included on the adhesive insulating layer sputtering improving layer, and a copper plating layer provided on the adhesive layer is improved.

通过采用此第二十四方面的方法,在该绝缘层上提供的镀铜层被用做导体层。 By using this method of the twenty-fourth aspect, a copper plating layer provided on the insulating layer is used as conductive layer.

如上所述,本发明的COF柔性印刷线路板(例如COF薄膜载体带或COF型FPC)具有特殊的聚硅氧垸系列隔离层。 As described above, COF flexible printed wiring board (e.g., a film carrier tape or a COF COF type FPC) according to the present invention has particular series embankment silicone release layer. 因此,在安装半导体芯片的过程中,避免了薄膜载体带的绝缘层与加热工具的熔融粘接, 由此提高了半导体芯片安装线的可靠性和生产率。 Thus, during mounting the semiconductor chip, the insulating layer is avoided and fusion bonding the film carrier tape heating means, thereby improving the reliability and productivity of the semiconductor chip mounting line.

附图说明 BRIEF DESCRIPTION

参照下面对优选实施方案的详细叙述,同时参见附图,本发明的 Reference to the following detailed description of preferred embodiments, while reference to the drawings, the present invention

各种其他目的、特征和伴随的许多优点将会得到更好的理解,其中: Various other objects, features and many of the attendant advantages will be better understood, in which:

图1A是按照本发明一个实施方案的一种COF薄膜载体带的示意平面图; 1A is a schematic plan view of a tape according to one embodiment of the present invention is a COF film carrier;

图1B是按照本发明同一个实施方案的C0F薄膜载体带的截面图; 1B is a sectional view of the film carrier tape according to the same embodiment C0F embodiment of the present invention;

图2A - 2G是截面图,示出了按照本发明的一个实施方案制造COF 薄膜载体带的方法; FIGS 2A - 2G are cross-sectional views showing a method of manufacturing a COF film carrier tape in accordance with one embodiment of the present invention;

图3A -犯是截面图,示出了按照本发明的另一个实施方案用于制造COF的叠层薄膜; FIG 3A - made is a sectional view showing a laminated film for producing a COF accordance with another embodiment of the present invention;

图4是按照本发明的一个实施方案示出印刷电路板制造方法的截面图。 Figure 4 is an embodiment of the present invention is a sectional view showing a manufacturing method of a printed circuit board.

具体实施方式 Detailed ways

本发明的COF柔性印刷线路板(例如COF薄膜载体带或COF型FPC) 包括一个导体层和一个绝缘层。 COF flexible printed wiring board according to the present invention (e.g., a film carrier tape or a COF COF type FPC) comprising a conductor layer and an insulating layer. 对此包括导体层和绝缘层并用于COF 柔性印刷线路板的叠层薄膜没有特别的限制,可使用任何类型的导体-绝缘体叠层薄膜。 This includes a conductor layer and an insulating layer and a COF flexible printed wiring board laminate film is not particularly limited, and may use any type of conductor - insulator laminated film. 这样的叠层薄膜的例子包括在绝缘薄膜(例如聚酰亚胺薄膜)上溅镀粘接改进层(例如镍)和在粘接改进层上溅镀镀铜层而制备的叠层薄膜、通过在铜箔上涂布聚酰亚胺而制备的浇铸型 Examples of such laminate films include laminate film prepared in an insulating film (e.g. polyimide film) by sputtering on the adhesion improving layer (e.g., Ni) and copper sputtering on the adhesive layer improving layer, by coated on a copper foil and the polyimide type prepared by casting

(casting-type)叠层薄膜以及通过热塑性树脂或热固性树脂把绝缘薄膜热-压-粘接到铜箔上而制备的叠层薄膜。 (Casting-type) laminate film and the heat insulating film is a thermoplastic resin or a thermosetting resin - a copper foil adhered to the laminate film prepared - pressure.

本发明的COF柔性印刷线路板或通过本发明的方法制造的COF柔性印刷线路板包括如上所述的叠层薄膜和在此叠层薄膜与导体层相对一侧的绝缘层上提供的隔离层。 COF flexible printed wiring board according to the present invention or produced by the method according to the present invention comprises a laminate film COF flexible printed wiring board described above and the isolation layer on this film and a conductive layer laminated to the opposite side of the insulating layer provided. 在本发明的制造方法中,对形成隔离层的材料没有特别的限制,只要此材料具有如此的隔离性能,使得在安装半导体芯片的过程中能够避免叠层薄膜粘接到加热工具上,而且不因加热诱发烙融粘接即可。 In the manufacturing method of the present invention, there is no particular limitation on the material forming the spacer layer, so long as the material has barrier properties, so that the process of mounting the semiconductor chip can be avoided laminated film bonded to the heating tool, and not by heat induced melt adhesive can be branded. 无论无机材料还是有机材料都是可以应用的。 Whether an inorganic material or organic material may be applicable. 优选的隔离剂的例子包括聚硅氧烷系列隔离剂、环氧树脂系列隔离剂或者含氟化合物,更优选是聚硅氧垸系列化合物,即具有硅氧烷键(Si-O-Si)的化合物。 Preferred examples of the release agent include a silicone series release agent, an epoxy resin or a fluorochemical release agent, more preferably a silicone compound embankment series, i.e. having a siloxane bond (Si-O-Si) of compound. 含有聚硅氧垸系列化合物的隔离剂是优选的,因为可以以比较简单的方式形成隔离层,而且即使当此隔离层被转移到所生产的印刷线路板的安装侧时,该隔离层对模塑树脂的粘接也没有不利影响的趋势。 A silicone-containing release agent embankment series compounds are preferred, because the isolation layer may be formed in a relatively simple manner, and this even when the mounting side spacer layer is transferred to the production of a printed wiring board, the spacer layer die adhesive plastic resin is not adversely influence the trend.

用于形成隔离层的隔离剂的例子包括聚硅氧烷系列化合物,即具有硅氧烷键的化合物,这包括聚硅氧烷系列隔离剂。 Examples of the release agent forming the release layer comprises a silicone series compound, i.e. a compound having a siloxane bond, which comprises a series of silicone release agent.

更具体说,这样的隔离剂含有选自聚硅氧垸化合物例如聚二硅氧烷和聚三硅氧烷的至少一种类型。 More specifically, such a release agent selected from silicone-containing compounds such as embankment polydiorganosiloxane and at least one trisiloxane type. 此隔离剂优选包括通过隔离剂的涂布和反应能够转化为聚硅氧垸系列化合物的化合物。 This preferably comprises a release agent by coating a release agent and the reaction can be converted to the compound embankment silicone series compound. 这种化合物的例子包括硅垸化合物,例如单硅垸、二硅垸和三硅烷以及二氧化硅溶胶化合物。 Examples of such compounds include silicon compounds embankment, such as a single silicon embankment, di- and tri-silicon embankment silica sol and silane compounds.

更优选的隔离剂的例子包括含有垸氧基硅烷或硅氮烷化合物的隔离剂,此硅氮烷是例如六甲基二硅氮垸或全氢聚硅氮烷,它们属于具有Si-NH-Si结构的硅垸化合物,可用做形成硅氧烷键的前体。 More preferable examples of the release agent comprises a release agent comprising embankment silane or silazane compound, this silazanes are hexamethyldisilazane, for example, nitrogen or embankment perhydro polysilazanes, they belong having Si-NH- a silicon compound of Si embankment structure, can be used to form the precursor siloxane bond. 这些隔离剂形成的隔离层含有通过其涂布或在涂布后与水分或在空气中所含的类似物质发生反应而具有硅氧垸键的化合物。 The release layer containing a release agent formed by reacting a compound having silicon-oxygen bonds embankment occurring or coated after the coating with water or the like contained in the air. 然而在例如使用硅氮垸的情况下,在隔离层中也可以存在未反应的Si-NH-Si键。 However, in the case of using silicon nitride for example, embankment, can also be present Si-NH-Si bonds unreacted isolation layer.

如上所述,由涂布后的反应形成的聚硅氧垸系列化合物得到最优选的隔离层。 As described above, silicone series compound embankment formed by the reaction after coating the most preferred barrier layer.

虽然上述隔离剂一般含有有机溶剂,但水溶液型或乳液型的类似隔离剂也是可以使用的。 While the above release agent generally contains an organic solvent, but an aqueous type or emulsion type release agent like may also be used.

隔离剂的特定例子包括聚硅氧烷系列树脂SR 2411 (商品名:Dow Specific examples of release agents include silicone series resin SR 2411 (trade name: Dow

Corning Toray Silicone公司的产品,含有二甲基聚硅氧垸系列硅油、 甲基三(甲基乙基酮肟)硅烷、甲苯和石油醚)、聚硅氧垸系列树脂SEPA-COAT (商品名:信越化学株式会社的产品,含有硅氮烷、合成异石蜡烃和乙酸乙酯)以及C0LC0AT SP-2014S (商品名:Colcoat公司的产品,含有硅垸化合物)。 Corning Toray Silicone company's products, containing a dimethyl silicone series embankment silicone oil, methyl tris (methyl ethyl ketoxime) silane, toluene and petroleum ether), silicone series resin embankment SEPA-COAT (trade name: product by Shin-Etsu chemical Co., Ltd., containing silazane, synthetic isoparaffin and ethyl acetate) and C0LC0AT SP-2014S (trade name: Colcoat company's products, a silicon-containing compound embankment). 含有二氧化硅溶胶的隔离剂的例子包括COLCOAT P和COLCOAT N-103X (商品名:Colcoat公司的产品)。 Examples of the release agent containing silica sol include COLCOAT P and COLCOAT N-103X (trade name: Colcoat Co., Ltd.). 在二氧化硅溶胶中所含的二氧化硅的颗粒度是例如50 - 80A。 Of the silica particles contained in silica sol, for example, 50 - 80A.

值得注意的是,提供由含有硅氮垸化合物的聚硅氧烷系列隔离剂形成的隔离层是特别优选的,因为这种隔离剂对于在安装半导体芯片的过程中防止叠层薄膜与加热工具的粘接具有优异的隔离性而且不会由加热诱发熔融粘接。 Notably, the spacer layer to provide a silicone series release agent containing silicon nitride is formed embankment compounds are particularly preferred because such a release agent to prevent the laminate film and the heating means during the mounting of the semiconductor chip adhesive having excellent barrier properties and not induced by heat fusion bonding. 这样的含有硅氮烷化合物的隔离剂的例子包括聚硅氧烷系列树脂SEPA-COAT (商品名:信越化学株式会社的产品,含有硅氮垸、合成异石蜡烃和乙酸乙酯)。 Examples of such a release agent-containing silazane compound comprising a silicone series resin SEPA-COAT (trade name: product of Shin-Etsu Chemical Co., embankment containing silicon nitride, synthetic isoparaffin and ethyl acetate).

对形成这样的隔离层的方法没有特别的限制,可以使用任何已知的方法。 There is no particular limitation on the method of forming such spacer layer, any known method may be used. 例如可通过喷涂、浸涂或辊涂等方法在基底上涂布隔离剂或其溶液。 For example a release agent or a solution thereof may be coated by spraying, dipping, or roll coating method on a substrate. 另外,在转移膜上提供的隔离层可以被转移。 Further, the transfer film provided on the isolation layer may be transferred. 在各种情况下, 可通过例如热处理来增强绝缘层和隔离层之间的粘接,以避免隔离层与绝缘层被剥离。 In each case, may be enhanced adhesion between the insulating layer and the spacer layer, for example by heat treatment, in order to avoid the isolation layer and the insulating layer is peeled off. 隔离层无须很均匀地提供在整个绝缘层上,可以以间断的岛屿状提供此隔离层。 Without isolating layer is provided uniformly over the entire insulating layer, may be provided in a discontinuous island-shaped spacer layer. 例如,在通过转移提供隔离层的情况下, 在只在两列定位孔之间的区域提供隔离层的情况下(此情况将在下面叙述)或者在相当于将以连续或间断的岛屿状安装半导体芯片(IC) 的区域提供隔离层的情况下。 For example, in the case where the spacer layer is provided by transferring, in the case where the spacer layer is provided only in the region between the two positioning holes (in this case will be described below) or the like will be mounted in continuous or discontinuous corresponding to the islands the case where the spacer layer providing a semiconductor chip area (IC),. 只要在安装半导体元件之前提供此隔离层,对提供隔离层的时间就没有特别的限制。 As long as the spacer layer prior to mounting the semiconductor element, to provide time release layer is not particularly limited. 具体说来,可以在提供导体层之后提供此隔离层;可以在绝缘层上提供导体层之前提供隔离层;或者与提供导体层同时提供隔离层。 Specifically, may be provided after providing the conductive layer the spacer layer; a conductive layer may be provided prior to the isolation layer provided on the insulating layer; and providing the conductive layer or layers are simultaneously provide isolation. 无须说,不一定非要在绘出导体层的图案之前提供隔离层,但可以在绘出导体层图案以后提供隔离层。 Needless to say, not necessarily drawn to provide isolation layer prior to patterning the conductive layer, but the isolation layer may be provided after the conductive layer pattern is plotted.

例如,在提供导体层以后或者在绝缘层上提供导体层之前的情况下提供隔离层,优选使用转移法。 For example, after providing the conductive layer or the case provided before the conductive layer providing isolation layer on the insulating layer, preferably using a transfer process. 当在绘出导体层的图案之后提供隔离层时,优选使用涂布的方法。 When the spacer layer is provided after the conductive layer pattern depicted, preferably using a coating method. 不用说,对确定形成隔离层的时间并 Needless to say, the determination of time and forming an isolation layer

无限制,对于涂布方法来说,可以在绘制导体层图案之前的初始阶段提供隔离层,而对于转移方法来说,可以在绘制导体层的图案之后提供隔离层。 Unlimited, for the coating method, the isolation layer may be provided prior to the initial stage of drawing conductive layer pattern, and for the transfer process, the isolation layer may be provided after the conductive layer pattern drawing.

在本发明的制造方法的一个实施方案中,在光刻工艺(形成图案的工艺)之后和在安装半导体元件之前提供隔离层。 In one embodiment of the manufacturing method of the present invention, in a lithography process (pattern forming process), and after providing the isolation layer prior to mounting the semiconductor element. 选择上述时间的原因是,隔离层能够被光刻胶去除剂或类似的液体溶解。 The reason for choosing the above time, the spacer layer can be a resist remover liquid or the like is dissolved. 因此,优选在对导体层进行刻蚀以除去形成布线图案的抗蚀剂掩膜之后来提供隔离层。 Accordingly, it is preferable in the conductive layer is etched to remove the resist mask subsequently formed wiring pattern to provide the spacer layer. 更具体说,例如,优选在除去抗蚀剂掩膜前形成镀锡层之后,或者在除去抗蚀剂掩膜并提供焊料防蚀层前的电镀导线电极以后提供隔离层。 More specifically, for example, preferably after the resist mask is removed before the tin-plated layer is formed, the resist mask is removed or plating and provides front electrode lead solder corrosion protection layer after providing the isolation layer. 可通过涂布含有隔离剂的溶液和使涂布的溶液干燥的方法来形成这样的隔离层。 The coating solution and drying a solution containing a release agent may be formed by coating such a spacer layer. 可是,为了增加绝缘层和隔离层之间的粘接强度, 优选对涂布的溶液进行加热。 However, in order to increase the bonding strength between the insulating layer and the isolation layer, preferably by heating the coated solution. 进行加热的条件例如是,在50 - 200。 Conditions, for example, heating at 50--200. C, 优选在100 — 200。 C, preferably at 100--200. C的温度下加热1 _ 120分钟(mi皿te),优选30 — 120 分钟。 120 minutes --1 _ 120 minutes (mi The dish te), preferably heating at a temperature of 30 C is.

按照本发明方法的另一个实施方案,可以把在转移膜上提供的隔离层转移到与安装半导体芯片(IC) 一侧相对的绝缘层的表面上。 According to another embodiment of the method of the present invention, it can be provided on the isolation layer transfer film is transferred to the surface opposite to the semiconductor chip is mounted (IC) side of the insulating layer. 进行转移的示例性条件是,且不限于,在15 - 200°C下加热,辊或压负荷是5 - 50kg/cm2 ,处理时间0. 1秒-2小时。 Exemplary conditions for transfer is not limited to, 15 - Heating at 200 ° C, the roll pressure load, or is 5 - 50kg / cm2, the processing time of 0.1 seconds to 2 hours. 通过例如热处理可以增强绝缘层和隔离层之间的粘接,以避免隔离层与绝缘层剥离。 For example, by heat treatment may enhance the adhesion between the insulating layer and the isolation layer, the isolation layer to prevent peeling and the insulating layer. 进行加热的示例性的条件是,但不限于,在50 - 200eC,优选在100 - 200°C 的温度下加热1分钟-120分钟,优选30分钟-120分钟。 Exemplary heating conditions, but is not limited to, 50 - 200eC, preferably 100 - Heated to 200 ° C at a temperature 1 minute 120 minutes, preferably 30 minutes to 120 minutes.

按照上述的转移方法,只要在安装半导体元件之前提供隔离层, 对提供隔离层的时间没有特别的限制。 According to the above transfer method, as long as the isolation layer prior to mounting the semiconductor element, there is no particular limitation on the spacer layer to provide a time. 具体地说,可以在绝缘层没有提供导体层之前,或者与提供导体层的同时在绝缘层上提供隔离层。 Specifically, it is possible, or with the conductor layer while providing an isolation layer provided on the insulating layer until the insulating layer is not provided in the conductive layer. 不用说,不一定非要在绘制导体层图案之前提供隔离层,但可以在绘制导体层图案之后提供隔离层。 Needless to say, the spacer layer does not necessarily provide a conductive layer pattern before drawing, but the isolation layer may be provided after the conductive layer pattern drawing.

例如,在提供导体层之前在绝缘层提供隔离层的情况下,优选使用转移法。 For example, before providing the conductive layer to provide a case where the separation layer, preferably using a transfer process in the insulating layer. 在制造C0F柔性印刷线路板的初始阶段通过转移法提供隔离层的情况下,可使用如下的操作程序。 The case of providing the spacer layer in the manufacture of flexible printed wiring board C0F initial stage by the transfer method, the following procedure may be used. 具体说,该薄膜基底不从隔离层上剥离,使其作为增强膜,该薄膜基底在最终的制造步骤移去。 Specifically, the film substrate is not peeled off from the release layer, so as to enhance the film, the film substrate is removed in the final manufacturing step.

在使用本发明的C0F柔性印刷线路板时,在其上面安装半导体芯 When using C0F flexible printed wiring board of the present invention, the semiconductor chip mounted thereon

片。 sheet. 对安装的方法没有特别的限制。 There is no particular limitation on the method of installation. 例如,半导体芯片是通过将COF 柔性印刷线路板设置在放置在芯片台上的半导体芯片上并进行定位, 再把加热工具压到COF柔性印刷线路板上而安装的。 For example, the semiconductor chip is provided by the COF flexible printed wiring board is placed on the semiconductor chip and the chip positioning table, and then the heating tool is pressed onto the flexible printed circuit board mounted in the COF. 在这种情况下, under these circumstances,

加热工具被加热到至少200°C,在某些情况下加热到350°C或者更高。 Heating tool is heated to at least 200 ° C, heated to 350 ° C or higher in some cases. 然而,由于COF柔性印刷线路板在其绝缘层上具有隔离层,就能够避免在加热工具和绝缘层之间发生的熔融粘接。 However, since the COF flexible printed wiring board having a barrier layer on the insulating layer, it is possible to prevent fusion bonding occurs between the heating means and the insulating layer.

下面将参照附图1A和IB来叙述作为本发明COF柔性印刷线路板一个实施方案的COF薄膜载体带。 As described below with film COF COF flexible printed wiring board of the present invention, one embodiment of the carrier tape with reference to FIGS. 1A and IB. 以COF薄膜载体带作为一个例子来叙述本发明下面的实施方案。 In COF film carrier tape described below as an example to the embodiment of the present invention. 可是不用说,本领域的普通技术人员都很容易理解,也可以用类似的方法制造COF型的FPC。 But needless to say, those of ordinary skill in the art are easy to understand, you can also create COF type of FPC in a similar way.

图1A和1B示出按照本发明的一个实施方案的C0F薄膜载体带20。 1A and 1B shows a film carrier tape 20 C0F according to one embodiment of the present invention. 如图1A和IB所示,按照本发明实施例的COF薄膜载体带20由用于制造COF的叠层薄膜10构成,该叠层薄膜包括导体层11 (铜箔)和绝缘层12 (聚酰亚胺薄膜)。 COF film carrier shown in Figure 1A and the IB, an embodiment of the present invention is manufactured by the laminate film tape 20 for constituting the COF 10, the laminated film including a conductor layer 11 (copper foil) and an insulating layer 12 (polyamic imide film). COF薄膜载体带20具有通过绘制导体层11的图案而得到的布线图案21,和一对在横向上具有间隔在两列定位孔22,这些孔是沿着相对的纵向边缘设置的;这就是说,这两列定位孔的排列方式,使得各列是沿着布线图案21的相对纵向边缘的各个边延伸。 COF film carrier tape having a wiring pattern 20 through the conductor layer 11 of the drawing pattern is obtained 21, and a pair having two spaced positioning holes 22, these holes are disposed along the opposite longitudinal edges in the transverse direction; that , the arrangement of the positioning holes of the two columns, each column is such that each side extends along an opposite longitudinal edge of the wiring pattern 21. 布线图案21在薄膜载体带的纵向上连续地提供在绝缘层12的表面上。 A wiring pattern 21 in the longitudinal direction of the film carrier tape is continuously provided on the surface of the insulating layer 12. 每一个布线图案21在其表面上都具有阻焊膜层(solder resist layer) 23,此层是通过丝网印刷涂布阻焊涂层溶液而形成的。 Each wiring pattern 21 on the surface having the solder mask layer (solder resist layer) 23, this layer is applied by screen printing the solder coating solution formed. 再有,可以在绝缘层的两侧形成布线图案(两个金属COF薄膜载体带)。 Further, a wiring pattern can be formed (COF two metal film carrier tape) on both sides of the insulating layer. 在此情况下,可以只在加热工具要接触的区域,通过涂布或转移来形成隔离层。 In this case, only in the region of the heating means to be contacted, the isolation layer is formed by coating or transfer.

虽然可以由铜以外的金属形成导体层11,例如用铝、金或银,但一般是使用铜。 Although the conductor layer 11 may be formed, for example, aluminum, gold or silver of a metal other than copper, but is generally copper. 对铜层的种类没有特别的限制,任何种类的铜层,例如可使用通过蒸汽沉积或电镀得到的铜层、电解铜箔或者轧制铜箔等。 The species of the copper layer is not particularly limited, and any kind of a copper layer, for example, by using a copper layer, an electrolytic copper foil or rolled copper foil or the like vapor deposited plating obtained. 此导体层11的厚度一般是1 - 70微米(um),优选5 - 35微米。 The thickness of this conductive layer 11 is generally 1 - 70 microns (um), preferably 5--35 m.

绝缘层12可以由聚酰亚胺以外的聚合材料形成,例如聚酯、聚酰胺、聚醚砜或者液晶聚合物。 Insulating layer 12 may be formed of a polymeric material other than polyimide, such as polyester, polyamide, polyether sulfone or a liquid crystal polymer. 其中优选通过苯四酸二酐和4, 4' -二氨基二苯醚聚合制备的芳香族聚酰亚胺(所有的重复单元都是芳香族的)。 Wherein, preferably by pyromellitic dianhydride and 4,4 '- oxydianiline polymerization aromatic polyimide (all repeating units are aromatic). 绝缘层12的厚度一般为12. 5 - 125微米,优选12. 5 - 75微米, The thickness of the insulating layer 12 is typically 12.5 - 125 microns, preferably 12.5 - 75 microns,

更优选为12.5- 50微米。 More preferably 12.5 to 50 microns.

用于COF的叠层薄膜10是按照如下方法制造的,例如,在导体层11 (铜箔)上涂布含有聚酰亚胺前体和清漆的聚酰亚胺前体树脂组合物,借此形成涂层12a、通过干燥除去溶剂、巻绕起该涂层以及在氧吹除的固化炉里加热巻绕起的涂层使之酰亚胺化,从而形成绝缘层12。 COF for the film laminate 10 is manufactured in the following manner, for example, a conductor layer in a polyimide resin precursor coating composition containing a polyimide precursor varnish and the (copper foil) 11, whereby forming a coating layer 12a, the solvent was removed by drying, so Volume imidizing the coating and the coating is wound up in a curing oven's heating blow oxygen Volume wound up so as to form insulating layer 12. 然而,对制造此叠层薄膜的方法没有特别的限制。 However, there is no particular limitation on the method for producing this laminated film.

可以由含有硅氮烷化合物的硅氧垸系列隔离剂或含有二氧化硅溶胶的隔离剂来形成隔离层13。 The isolation layer 13 may be formed by a series of silicone release agent embankment containing silazane compound or the release agent containing silica sol. 隔离层13优选通过使用例如涂布法而得到,即在绝缘层12上提供隔离剂,然后通过加热,以在隔离层13和绝缘层12之间得到牢固的粘接。 The isolation layer 13 is preferably obtained by a coating method using, for example, providing a release agent on the insulating layer 12, and then by heating to give a strong adhesion between the insulating layer 13 and the insulating layer 12. 隔离层13的厚度是例如0. 1 - 1微米。 The thickness of the isolation layer 13 is, for example 0.1 - 1 micron.

在如上所述的本发明COF薄膜载体带上安装芯片或电子器件。 In the COF film carrier tape of the present invention as described above, the chip is mounted or an electronic device. 例如,在传送这些带或基底时,就在带上安装半导体芯片,或者在印刷的基底上安装电子器件,从而得到COF产品。 For example, when these transmission belt or substrate, the semiconductor chip is mounted in the tape, or mount the electronic components on the printed substrate, to thereby obtain COF products. 由于绝缘层12具有50% 或者更高的光学透明性,可以借助于CCD或类似的装置,由绝缘层12 一侧识别出布线图案21的图象(例如内引线)。 Since the insulating layer 12 having 50% or higher optical transparency, by means of a CCD or similar device, an image (e.g. inner leads) of the wiring pattern 21 by the insulating layer 12 side identified. 另夕卜,可以识别出待安装的半导体芯片和印刷电路板的布线图案。 Another Bu Xi, a wiring pattern can be recognized semiconductor chip and the printed circuit board to be mounted. 这样,布线图案相对绝缘层12的精确定位通过图象处理就能够实现,从而以高精度安装上电子器件。 Thus, a relatively precise positioning of the wiring pattern of the insulating layer 12 can be realized by the image processing, thereby accurately mounted on the electronic device.

下面,参照图2A - 2G叙述上述COF薄膜载体带制造方法的一个例子。 2G example describes a method of manufacturing the COF film carrier tape - below with reference to FIG. 2A.

如图2A中所示,提供一件用于制造COF叠层的薄膜10。 As shown in FIG. 2A, a film 10 is provided for producing a laminate COF. 如图2B 所示,用冲压或类似的方法,通过导体层11和绝缘层12形成定位孔22。 2B, a stamping method or the like, the positioning hole 22 is formed through the conductor layer 11 and the insulating layer 12. 可以从绝缘层12的正面或者背面形成这些定位孔22。 These positioning holes 22 may be formed from either the front or back surface of the insulating layer 12. 然后如图2C中所示,通过常规的光刻方法,在导体层11的一个区域上形成光致抗蚀剂涂层30,以提供布线图案21,该方法涉及涂覆,例如,负片型光致抗蚀剂涂覆溶液。 Then, as shown in Figure 2C, by conventional photolithographic methods, are formed on a region of the conductor layer 11 of the coating 30 of photoresist, to provide a wiring pattern 21, the method relates to coating, e.g., a negative type light photoresist coating solution. 不用说,也可以应用正片型光致抗蚀剂。 Needless to say, the application may be positive-type photoresist. 在把定位销插入定位孔使绝缘层12定位以后,该光致抗蚀剂涂层30通过光掩膜31曝光并将其显影,以绘制图案,从而形成抗蚀图案32,以提供如图2D所示的布线图案。 In the positioning pin inserted into the positioning holes of the insulating layer 12 is positioned after the photoresist layer 30 through a photomask 31 exposing and developing, to draw a pattern, thereby forming the resist pattern 32, as shown in FIG 2D to provide a wiring pattern as shown. 随后,使刻蚀剂通过作为掩膜图案的抗蚀图案32进行溶解,除去导体层ll,并用碱溶液或类似的物质溶解,除去抗蚀图案32,这样就形成了如在图2E中所示的布线图案21。 Subsequently, the dissolved by an etchant resist pattern as a mask pattern 32, the conductor layer ll is removed, and the material was dissolved with an alkali solution or the like, the resist pattern 32 is removed, thus forming, as shown in FIG. 2E a wiring pattern 21. 这里, Here,

当布线图案21形成时,伪布线图案与布线图案一起可以以这样一种方式不连续地形成,使得定位孔22被围绕。 When the wiring pattern 21 is formed, the wiring pattern and the dummy wiring pattern may not be formed continuously along in such a manner that the positioning hole 22 is surrounded. 在这种情况下,该伪布线图 In this case, the dummy wiring pattern

案能强化绝缘层12,由此,当该COF薄膜载体带被制造时,该伪布线图案必然能够承载该绝缘层12。 Text can strengthen the insulating layer 12, whereby, when the COF film carrier tape is manufactured, the dummy wiring pattern is necessarily capable of bearing the insulating layer 12. 伪布线图案可以沿绝缘层12的纵向连续地形成。 Dummy wiring pattern may be along a longitudinal direction of the insulating layer 12 is continuously formed. 伪布线图案也可以围绕每个定位孔22不连续地形成,从而以其必然能够被承载的方式提高绝缘层12的刚性。 Dummy wiring pattern 22 may be discontinuously formed around each of the positioning holes, so that their way must be able to be carried by the insulating layer 12 to increase the rigidity. 根据需要对如此形成的整个布线图案21进行电镀(例如镀锡),然后通过涂布法在绝缘层12上形成隔离层13,如图2F所示。 The entire wiring pattern thus formed plating 21 as needed (e.g. tin), the isolation layer 13 is then formed on the insulating layer 12 by a coating method, shown in Figure 2F. 虽然可以简单地对涂布好的隔离层进行干燥,还是优选加热此隔离层,以增加隔离的效果,即避免加热工具和绝缘层的熔融粘接。 Although the coating may simply be good for drying the isolation layer, the spacer layer is preferably heated to increase isolation effect, i.e. to avoid the heating means and the insulating layer melt adhesive. 进行加热的条件,例如是,且不限于, 在50 - 200°C,优选在100 - 200°C加热1 - 120分钟,优选30 - 120 分钟。 Heating condition, for example, and without limitation, at 50 - 200 ° C, preferably 100 - Heat 200 ° C 1 - 120 minutes, preferably 30--120 minutes. 然后如图2G所示,通过例如丝网印刷形成阻焊膜层23。 Then, as shown in FIG. 2G, a solder resist layer 23 is formed by screen printing. 根据需要用金属给没有被阻焊膜层23覆盖的外引线和内引线进行电镀。 The metal plating need not to be covered by the solder resist layer 23 and the outer lead wire. 对金属电镀层的材料没有特别的限制,根据使用的目的可适当地进行镀锡、 镀锡合金、镀镍、镀金、镀金合金等。 No particular limitation on the material of the metal plating layer may suitably be tin, tin alloy, nickel, gold, gold alloy or the like according to the purpose of use.

在上述实施方案中,隔离层13是在用碱溶液或类似物质除去光抗蚀图案32以后和在提供阻焊膜层23之前形成。 In the above embodiment, the isolation layer 13 with an alkaline solution or the like after removing the photoresist pattern 32 is formed and prior to providing the solder mask layer 23. 作为一种选择,隔离层13可以在提供阻焊膜层23后的最终制造步骤中形成。 As an alternative, the isolation layer 13 may be formed after the final manufacturing step to provide a solder resist layer 23. 当隔离层13 通过后一种方法形成时,避免了隔离层13曝露在刻蚀剂、光致抗蚀剂去除剂等,因此得到高的隔离效果。 When the spacer layer 13 is formed by a method, avoiding the isolation layer 13 is exposed to the etchant, the photoresist is removed, and the like, thus obtaining a high isolation. 如上所述,术语"最终制造步骤" 指的是紧接在产品检验步骤前的一个步骤。 As described above, the term "final manufacturing step" refers to a step immediately prior to product testing step.

如上所述,本发明的隔离层优选在为了形成布线图案21的光刻步骤之后和与半导体芯片粘接之前形成。 As described above, the isolation layer is preferably formed prior to the present invention and a semiconductor chip bonded to a wiring pattern 21 is formed in a photolithography step later. 确定这个时间的原因是,在光致抗蚀剂层去除步骤中隔离层可能会被溶解。 Determining this time because the isolation layer may be dissolved in the photoresist layer removal step. 因此,优选在完光刻步骤之后或在电镀之后,更优选在形成阻焊膜层23或类似步骤后立即形成隔离层13。 Thus, preferably after completion of photolithography step or after the plating, and more preferably is formed in the solder mask layer 23 or the isolation layer 13 is formed immediately after similar steps. 不用说,也可以在光刻步骤前形成隔离层13。 Needless to say, the isolation layer 13 may be formed before the photolithography step.

隔离层可以通过转移法形成。 Isolation layer may be formed by a transfer method. 具体说来,上述COF薄膜载体带可以由用于制造C0F的叠层薄膜10A制造,如在图3A-3E所示。 Specifically, the above-described COF film carrier tape may be manufactured by a C0F for manufacturing a laminated film 10A, as shown in FIGS. 3A-3E. 通过在导体层11 (铜箔,图3A)涂布含有聚酰亚胺前体和清漆的聚酰亚胺前体树脂组合物,由此形成涂层12a (图3B)、通过干燥除去溶剂、巻绕该涂层以及在固化烘箱中加热此巻绕的涂层以进行酰亚胺化,以形成 Conductor layer by a polyimide resin precursor composition (copper foil in FIG. 3A) applying a solution containing a polyimide precursor varnish and 11, thereby forming a coating layer 12a (FIG. 3B), the solvent was removed by drying, Volume and heating the coating about the cured coating in an oven at about this Volume imidization to form

绝缘层12 (图3C),由此来制造图3A-3E所示的叠层薄膜。 Insulating layer 12 (FIG. 3C), thereby the multilayer film shown in FIG. 3A-3E manufactured. 然后,在作为转移基底的转移薄膜14上形成的隔离层13a与绝缘层12的表面 Then, on the surface of the transfer film as the transfer substrate 14, release layer 13a and the insulating layer 12

(该表面与导体层11的一侧相对)紧密地接触(图3D)并且加热。 (Side of the surface opposite the conductor layer 11) in close contact (FIG. 3D) and heated. 然后,剥离转移薄膜14,借此形成用于制造COF并具有隔离层13A (图犯)的叠层薄膜IOA。 Then, release the transfer film 14, thereby forming a laminate film for producing a COF IOA and having a release layer 13A (FIG commit) of. 进行转移的示例性条件是,且不限于,在15-200。 Exemplary conditions for transfer is not limited to, at 15-200. C的温度下加热,辊或压负荷是5 - 50kg/cm2 ,处理时间是0. 1秒 C at the heating temperature, the roll pressure load, or is 5 - 50kg / cm2, the treatment time is 0.1 seconds

-2小时。 -2 hours. 进行加热的示例性的条件是,但不限于,在50 - 200°C,优选在100 - 200°C下加热1 - 120分钟,优选30 - 120分钟。 Exemplary heating conditions, but it is not limited to, 50 - preferably at 100 200 ° C - heated at 200 ° C 1 - 120 minutes, preferably 30--120 minutes. 不用说, 隔离层13A可以在光刻步骤或类似步骤之后通过转移来形成。 Needless to say, the spacer layer 13A may be formed by photolithography after the transfer step or the like. 转移薄膜14材料的例子包括PET (聚对苯二甲酸乙二醇酯)、PI (聚酰亚胺) 和液晶聚合物。 Examples of the transfer material film 14 include PET (polyethylene terephthalate), PI (polyimide) and liquid crystal polymers. 此转移薄膜14的厚度是例如15 - 100微米,优选是20 The thickness of this film 14 is transferred e.g. 15--100 micron, preferably 20

-75微米。 -75 microns.

如图4所示,本发明的印刷电路板通过在用上述方法制造的COF 薄膜载体带20上安装半导体芯片33来制造。 As shown, the printed circuit board according to the present invention by a COF film carrier produced by the method described above in mounting a semiconductor chip 33 is manufactured on the belt 4 20. 具体说来,输送COF薄膜载体带20,然后将其在预定的位置上定位,同时把半导体芯片33 放置在芯片台41上。 Specifically, the conveying COF film carrier tape 20, and then positioned in a predetermined position, while the semiconductor chip 33 is placed on the die table 41. 随后,借助于上钳42和下钳43固定住C0F薄膜载体带,此时每个上钳42下降而相应的下钳43升高。 Subsequently, by means of the upper jaw 42 and lower jaw 43 fixed C0F film carrier tape, each of the jaw 42 is lowered at this time and the corresponding lower jaw 43 is increased. 加热工具45压在如此固定住的COF薄膜载体带20上,使得将带子加热并进一步下降, 从而把薄膜载体带20的内引线压在半导体芯片33的突起34上。 Heating means 45 so pressed COF film carrier tape 20 is fixed, such that the tape is heated and further lowered, so that the film carrier tape is pressed against the inner leads 20 on the semiconductor chip 33 and the protrusion 34. 压紧经过预定的时间,使内引线和半导体芯片33粘合在一起。 Pressing a predetermined time elapses, the inner leads and the semiconductor chip 33 are bonded together. 在完成粘合以后,用树脂密封粘合好的芯片,从而制造出一块印刷电路板。 After completion of bonding, good chip sealed with resin bonding, thereby manufacturing a printed circuit board.

根据加压的时间和压力或者其他条件,加热工具45的温度被控制在200。 The pressing time and pressure or other conditions, the temperature of the heating means 45 is controlled at 200. C或更高,优选35(TC或更高。按照本发明,即使当加热工具45被加热到如此高的温度,由于在将要与加热工具45接触的薄膜载体带20的表面上提供了隔离层13,就避免了在COF薄膜载体带20和加热工具45之间的熔融粘接。因此,按照本发明,可以在足够高的温度下进行粘合,所以就保证了高的粘合强度。换句话说,由于可以升高温度以得到预定水平的粘合强度,就縮短了压接粘合所需的时间,这是有利的。 C or higher, preferably 35 (TC or higher. According to the present invention, even when the heating means 45 is heated to such a high temperature, since the spacer layer is provided on the surface of the film carrier 20 to be in contact with the heating means 45 with 13, to avoid the fusion bonding between the film carrier tape 45 in the COF 20 and the heating means. Thus, according to the present invention, the adhesive may be at sufficiently high temperatures, it ensures high adhesive strength. transducers words, since the temperature can be raised to obtain a predetermined level of adhesive strength, shortens the time required for bonding the crimp, which is advantageous.

实例 Examples

实例la - Id Examples la - Id

各种从市场可买到的聚酰亚胺薄膜基底,即S' PERFLEX(商品名: 住友冶金株式会社的产品,实例la)、 ESPANEX (商品名:日本铁钢化学株式会社的产品,实例lb)、 NEOFLEX (商品名:三井化学株式会社的产品,实例lc)和UPISEL (商品名:宇部工业株式会社的产品,实例Id)提供用来制造COF的叠层薄膜。 From the various commercially available polyimide film substrate, i.e., S 'PERFLEX (trade name: Sumitomo Corporation of metallurgical products, examples la), ESPANEX (trade name: product of Japan Steel Chemical Co., Ltd., Example lb ), NEOFLEX (trade name: manufactured by Mitsui Chemicals, Inc. examples LC) and UPISEL (trade name: product of Ube industries, Ltd., example Id) provide laminate film used to make the COF. 使用光致抗蚀剂给每种叠层薄膜的导体层绘制图案。 Drawing pattern conductor layer using photoresist to each laminated film. 将得到的整个图案镀锡,并在此薄膜基底的背侧涂布聚硅氧垸系列树脂(含有硅垸化合物)SR2411 (商品名:Dow Corning Toray Silicone有限公司的产品)。 The entire pattern obtained tin, and silicone series resin embankment side coated substrate of this film (a silicon-containing compound embankment) SR2411, manufactured (trade name: product of Dow Corning Toray Silicone Co., Ltd.). 在125°C下加热此涂层1 小时,形成具有隔离层的COF薄膜载体带。 The coating was heated for 1 hour at 125 ° C, formed with a COF film support having a barrier layer.

实例2a _ 2d Examples 2a _ 2d

各种在市场上可买到的与实施例la - Id中所用的相类似的各种聚酰亚胺薄膜基底,即S' PERFLEX(商品名:住友冶金株式会社的产品, 实例2a)、 ESPANEX (商品名:日本铁钢化学株式会社的产品,实例2b)、 NEOFLEX (商品名:三井化学株式会社的产品,实例2c)和UPISEL (商品名:宇部工业株式会社的产品,实例2d)用来为制造COF提供叠层薄膜。 Commercially available in a variety of embodiments Example la - similar Id various polyimide film used in the substrate, i.e., S 'PERFLEX (trade name: Sumitomo Corporation of metallurgical products, example 2a), ESPANEX (trade name: product of Japan Steel chemical Co., example 2b), NEOFLEX (trade name: manufactured by Mitsui Chemicals, Inc., example 2c) and UPISEL (trade name: product of Ube industries, Ltd., example 2d) for It provides for the manufacture of laminated film COF. 使用光致抗蚀剂给每种叠层薄膜的导体层绘制图案。 Drawing pattern conductor layer using photoresist to each laminated film. 将得到的整个图案镀锡,并在此薄膜基底的背侧涂布聚硅氧垸系列树脂(含有硅氮烷化合物)SEPA-COAT (商品名:信越化学株式会社的产品)。 The entire pattern obtained tin, and silicone series resin embankment side coated substrate of this film (containing silazane compound) SEPA-COAT (trade name: product of Shin-Etsu Chemical Co., Ltd.). 在125°C下加热此涂层1小时,形成具有隔离层的COF薄膜载体带。 The coating was heated for 1 hour at 125 ° C, formed with a COF film support having a barrier layer.

比较例la - ld禾卩2a- 2d Comparative Examples la - ld Wo Jie 2a- 2d

重复实施例la - Id和2a - 2d的操作程序,只是不提供隔离层, 从而分别得到比较例la - Id和2a - 2d的COF薄膜载体带。 And Id. 2A - - 2d of Example la was repeated procedure, but does not provide separation layer, respectively, thereby to obtain Comparative Example la - Id and 2a - 2d of the COF film carrier tape. 测试例1 Test Example 1

把加热工具压在在实例la - Id和2a - 2d中和在比较例la - Id和2a - 2d中制造的每个COF薄膜载体带的隔离层13上。 The pressure in the heating means in the example of la - the spacer layer of each film carrier tape fabricated COF 2d 13 - Id and 2a - 2d and in Comparative Examples la - Id and 2a. 加热工具的温度在260。 The temperature of the heating tool 260. C-440。 C-440. C之间变化。 Change between C. 在此加热条件下安装半导体芯片。 Mounting a semiconductor chip in this heating. 观察隔离层和加热工具之间粘接的情况,测定发生粘接的温度。 To observe the adhesion between the release layer and the heating tool, measurement temperature bonding occurs. 其结果如在表1中所示。 The results are shown in Table 1.

表l Table l

<table>table see original document page 20</column></row> <table>由表1可以清楚地看出,与不具有隔离层的比较例la - Id和2a -2d相比,实例la - Id和2a - 2d的薄膜载体带明显地显示出高的抗粘接性(即高的隔离效果)。 <Table> table see original document page 20 </ column> </ row> <table> As is clear from Table 1, in Comparative Example having no barrier layer la - Id and 2a -2d compared, Examples la - Id and 2a - 2d film carrier tape exhibits significantly high anti-adhesive properties (i.e., high isolation).

实例3a - 3d Example 3a - 3d

与实施例la-Id中所用的相类似的各种商品聚酰亚胺薄膜,即S, PERFLEX(商品名:住友冶金株式会社的产品,实施例3a)、 ESPANEX (商品名:日本铁钢化学株式会社的产品,实施例3b)、 NEOFLEX (商品名:三井化学株式会社的产品,实施例3c)和UPISEL (商品名:宇部工业株式会社的产品,实施例3d)用来为制造COF提供叠层薄膜。 Polyimide film, i.e. S, PERFLEX similar to Example la-Id various commodities used in the embodiment (trade name: Sumitomo Corporation of metallurgical products, Example 3a), ESPANEX (trade name: Japan Iron and Steel Chemical Corporation product, Example 3b), NEOFLEX (trade name: manufactured by Mitsui Chemicals, Inc., 3c) and UPISEL (tradename Example: Ube industries, Ltd. product of Example 3d) stacked to provide for the manufacture of COF layer film. 使用光致抗蚀剂方法给每种叠层薄膜的导体层绘制图案。 The method of using a photoresist to the conductive layer of each laminated film pattern is drawn. 将得到的整个图案镀锡,并在此薄膜基底的背侧涂布聚硅氧垸系列油SRX310 (商品名:Dow Corning Toray Silicone有限公司的产品)。 The entire pattern obtained tin, and silicone oil SRX310 series embankment on this side coated film substrate (trade name: product of Dow Corning Toray Silicone Co., Ltd.). 在125。 125. C下加热此涂层1小时,形成具有隔离层的COF薄膜载体带。 C 1 hours under heating this coating to form a COF film carrier tape having a barrier layer. 比较例3a - 3d Comparative Example 3a - 3d

重复实例3a-3d的操作程序,只是不提供隔离层,从而分别得到比较例3a - 3d的COF薄膜载体带。 Procedure was repeated Examples 3a-3d, except that the spacer layer is not provided, so that each of Comparative Example 3a - 3d with a COF film carrier. 测试例2 Test Example 2

把加热工具压在在实施例3a-3d中和在比较例3a-3d中制造的每个COF薄膜载体带的隔离层13上。 The heating means is pressed against and in the embodiment fabricated in Comparative Examples 3a-3d of the release layer 3a-3d each film carrier tape COF 13. 加热工具的温度在260°C - 400°C 之间变化。 The temperature of the heating tool at 260 ° C - vary between 400 ° C. 在此加热条件下安装半导体芯片。 Mounting a semiconductor chip in this heating. 观察隔离层和加热工具 Observation spacer layer and the heating means

之间粘接的情况,测定发生粘接的温度。 Where the adhesion between, the measured temperature of the adhesive occurs. 其结果如表2中所示。 The results are shown in Table 2.

<table>table see original document page 21</column></row> <table>由表2可以清楚地看出,与比较例3a - 3c相比,实例3a - 3c的薄膜载体带明显地显示出高的抗粘接性。 <Table> table see original document page 21 </ column> </ row> <table> As is clear from Table 2, in Comparative Example 3a - compared. 3C, Example 3a - 3c of the film carrier tape clearly shows high resistance to adhesion. 虽然实例3d的薄膜载体带具有比比较例3d更高的粘接温度,但此温度的差值比较小。 Although the example 3d film carrier tape having a bonding temperature higher than that of Comparative Example 3d, but this temperature difference is relatively small. 然而,考虑到通过熔融粘接安装半导体元件的温度,随着加热工具的类型、半导体芯片的类型、使用的安装元件的产品而变化, 一般在大约20(TC-大约350。C,对于本发明的目的而言,如此小的粘接温度的提高应该足够了。 However, taking into account the temperature of the semiconductor element is mounted by melt bonding, with the mounting element is the product of the heating tool type, type of the semiconductor chip, used varies, the present invention is usually about 20 (TC- about 350.C, for purposes, such a small increase bonding temperature should be sufficient.

实例4a-4h Examples 4a-4h

重复实施例la的操作程序,只是涂布SEPA-C0AT (商品名:信越化学株式会社的产品)的时间发生变化,借此得到C0F薄膜载体带。 Example la The procedure was repeated, except that the coating SEPA-C0AT (trade name: product of Shin-Etsu Chemical Co., Ltd.) changes a time, thereby obtaining a film carrier tape C0F. 具体说,通过如下的方法得到隔离层,即在用于制造C0F的叠层薄膜上涂布SEPA-C0AT,然后用空气干燥3小时或更长(实例4a);不用空气干燥,而是在125。 In particular, a method obtained by the separation layer, i.e. coating for producing the laminated film SEPA-C0AT C0F, and then air dried for 3 hours or longer (Example. 4A); instead of air drying, but at 125 . C下加热涂布的SEPA-C0AT1小时(实例4b);在给导体层绘制图案以前进行清洗的歩骤涂布SEPA-C0AT,然后用空气干燥3小时或更长(实例4c);在125°C下,给如此涂布的SEPA-C0AT 加热1小时而不用空气干燥(实例4d);或者通过在给导体层绘制图案的光致抗蚀剂显影后,涂布SEPA-C0AT,然后用空气干燥3小时或更长时间(实例4e);或者不进行空气干燥,而是在125。 Heating the coated SEPA-C0AT1 hours C (Example 4B); SEPA-C0AT coating step of washing the ho to the conductor layer before drawing pattern, and then dried for 3 hours or longer with air (Example 4C); at 125 ° under C, heating the thus coated to SEPA-C0AT 1 hour without air-drying (example 4D); or by a developing the photoresist, the conductive layer is applied SEPA-C0AT drawing pattern, and then air dried 3 hours, or longer (example 4E); air dried or not, but at 125. C下将如此涂布的SEPA-C0AT加热1小时(实例4f);或者在给导体层绘制图案、去除光致抗蚀剂和镀锡以后,涂布SEPA-C0AT,接着再进行3小时或更长的空气干燥(实例4g);或者不进行空气干燥,而是在125。 The thus coated C under SEPA-C0AT heated for 1 hour (Example 4F); or a drawing pattern conductor layer, removing the photoresist and tin, the coated SEPA-C0AT, followed by 3 hours or more long air drying (example 4G); air dried or not, but at 125. C下将如此涂布的SEPA-C0AT加热1小时(实例4h)。 The thus coated SEPA-C0AT heated for 1 hour at C (Example 4h).

测试例3 Test Example 3

把加热工具压在在实施例4a - 4h中制造的每个COF薄膜载体带的隔离层13上。 The pressure in the heating tools in Example 4a - 4h on the barrier layer produced in a film carrier tape for each COF 13. 加热工具的温度在340。 The temperature of the heating tool 340. C-49(TC之间变化。在此加热条件下安装半导体芯片。观察隔离层和加热工具之间粘接的情况,测定发生粘接的温度。结果如在表3中所示。 Variation (between TC C-49. Under this heating condition mounted semiconductor chip where the bond between the spacer layer and the heating observation tools, measurement temperature bonding occurs. The results are shown in Table 3.

表3<table>table see original document page 22</column></row> <table>由表3可以清楚地看出,在除去光致抗蚀剂以后形成隔离层的实例4g - 4h的薄膜载体带显示出优异的抗粘接性。 Table 3 <table> table see original document page 22 </ column> </ row> <table> As is clear from Table 3, the isolation layer is formed after removing the photoresist of Example 4g ​​- a film carrier 4h tape exhibits excellent anti-caking property. 对于此优异的抗粘接性的可能的原因是,在光刻步骤以后进行的去除光致抗蚀剂的步骤中, 隔离层发生了部分溶解。 For this excellent resistance may cause adhesion is carried out after the step of removing the photoresist photolithographic step, the insulating layer partial dissolution occurred. 由此结果还清楚地看出,在通过涂布法提供隔离层的情况下,与不进行任何附加的热处理只进行空气干燥相比, 通过热处理进一步提高了抗粘接性。 This result is also clear that, in the case of providing the spacer layer by a coating method, and without any additional thermal treatment as compared to only air drying, by heat treatment to further improve the anti-adhesion.

实例5a - 5e Examples 5a - 5e

用与制造实例4a - 4h的薄膜载体带相类似的方法,溅镀导体层、 除去光致抗蚀剂、镀锡和涂布聚硅氧烷系列树脂,制造出薄膜载体带。 Production Example a 4a - 4h method analogous film carrier tape phase, sputtering the conductive layer, the photoresist is removed, tin and coating a silicone-based resin, a film carrier tape manufacturing. 通过空气干燥3小时或更长的时间,或者在125°C下加热1小时来形成隔离层。 By air drying for 3 hours or longer, or heated for 1 hour at 125 ° C to form a release layer. 在实例5a - 5e中,用各种稀释因子,即1 (未稀释)、2、 3、 5和10倍的乙酸乙酯来稀释聚硅氧烷系列树脂SEPA-COAT (商品名: 信越化学株式会社的产品)。 ,, I.e. 1 (undiluted) with various dilution factor. 5e, 2, 3, 5, and 10-fold diluted with ethyl acetate silicone series resin SEPA-COAT (trade name - in Example 5a: Shin-Etsu Chemical Co. clubs products). 在各种情况下,计算出隔离层的厚度。 In each case, the calculated thickness of the isolation layer.

测试例4 Test Example 4

把加热工具压在在实例5a - 5e中制造的每个COF薄膜载体带的隔 The pressure in the heating tools in example 5a - 5e separates each COF film carrier tape fabricated in

离层13上。 Abscission layer 13. 加热工具的温度在320°C- 460°C之间变化。 The temperature of the heating tool varies between 320 ° C- 460 ° C. 在此加热条件下安装半导体芯片。 Mounting a semiconductor chip in this heating. 观察隔离层和加热工具之间粘接的情况,测定发生粘接的温度。 To observe the adhesion between the release layer and the heating tool, measurement temperature bonding occurs. 结果如在表4中所示。 The results are shown in Table 4.

表4 Table 4

<table>table see original document page 23</column></row> <table>如在表4中清楚地看到的,具有厚度0. 05微米或更厚的隔离层的薄膜载体带显示出抗粘接性,如用实施例5a-5c所确认,具有厚度超过O. 1微米的隔离层的薄膜载体带明显地显示出高的抗粘接性。 <Table> table see original document page 23 </ column> </ row> <table> As clearly seen in Table 4, the film carrier tape spacer layer has a thickness 0.05 m or thicker show anti adhesion, as confirmed in Example 5a-5c, a carrier film having a thickness of more than O. 1 micron spacer layer with clearly exhibits high adhesion resistant.

实例6 Example 6

通过涂布法在作为导体层11的超精密粗糙度铜箔(厚度9微米) 上形成作为绝缘层12的聚酰亚胺层(厚度40微米)。 It is formed as an insulating layer 12 of polyimide layer (thickness 40 m) on the roughness of the copper foil as the ultra-precision of the conductor layer 11 (a thickness of 9 [mu] m) by a coating method. 在铜箔(与导体层相对)的另一表面上,通过转移法提供由聚硅氧垸系列化合物形成的隔离层13 (厚度0. 1微米),由此得到实施例6的C0F薄膜载体带。 Copper foil (opposite to the conductor layer) on the other surface, providing the isolation layer 13 (thickness 0.1 m) formed by the silicone series compound embankment transfer method, thereby obtaining embodiment C0F film carrier tape of Example 6 . 在完成由聚硅氧垸系列化合物形成的隔离层13的转移以后,在12CTC 下加热此薄膜载体带。 After completion of the isolation layer is formed of a silicone compound is transferred embankment Series 13, heating the film carrier tape at 12CTC.

实例7 Example 7

重复实例6的操作程序,只是在转移聚硅氧烷系列隔离剂以后省掉将要进行的热处理,借此得到实例7的用于制造C0F的叠层薄膜。 Example 6 The procedure was repeated except that the heat treatment after the transfer of the silicone series release agent omitted to be performed, thereby obtaining a laminated film for producing C0F Example 7. 实例8 Example 8

重复实例6的操作程序,只是通过转移法由聚硅氧烷系列化合物形成隔离层13改为由SEPA-COAT (商品名:信越化学株式会社的产品) 来形成,借此得到实例8的用于制造COF的叠层薄膜。 Example 6 The procedure was repeated except that the isolation layer is formed by a transfer method from the silicone series compound 13 was changed from SEPA-COAT: forming (trade name, product of Shin-Etsu Chemical Co., Ltd.), to thereby obtain Examples 8 producing the laminated film COF.

比较例4 Comparative Example 4

重复实例6的操作程序,只是省略掉提供隔离层13,借此得到比 Example 6 The procedure was repeated, except omitted and the isolation layer 13 provided, thereby obtaining a ratio of

较例4的用于制造COF的叠层薄膜。 Comparative Example 4 for producing the laminated film of the COF. 测试例5 Test Example 5

对实例6 - 8和比较例4的每一种COF薄膜载体带,将它们的导体层11都绘制出图案。 Examples of 6 - 8 and each of the COF film carrier tape of Comparative Example 4, the conductor layer 11 which are drawn pattern. 把加热工具压在它们的每个薄膜载体带的隔离层13上。 The heating means pressing each of them on the isolation layer 13 of the film carrier tape. 加热工具的温度在260°C - 440°C之间变化。 The temperature of the heating tool at 260 ° C - vary between 440 ° C. 在此加热条件下安装半导体芯片。 Mounting a semiconductor chip in this heating. 观察隔离层和加热工具之间粘接的情况,测定发生粘接的温度。 To observe the adhesion between the release layer and the heating tool, measurement temperature bonding occurs. 其结果如在表5中所示。 The results are shown in Table 5.

表5 table 5

<table>table see original document page 24</column></row> <table> <Table> table see original document page 24 </ column> </ row> <table>

〇:不粘接;部分粘接;X:) 阽接; 如由表5所清楚地看到的,当温度超过300。 ○: not adhered; bonding portion; X :) perilous contact; As Table 5 clearly seen, when the temperature is more than 300. C时,比较例4的薄膜载体带就粘接在加热工具上。 C, the film of Comparative Example 4 on the carrier tape adhered to the heating means. 实施例7的薄膜载体带显示出优异的抗粘接性,使得当温度超过30CTC时,此载体带部分粘接在加热工具上。 A film carrier tape of Example 7 embodiment exhibits excellent resistance to adhesion, so that when the temperature exceeds 30CTC, this portion is adhered to the carrier tape on the heating means. 而当温度是400。 And when the temperature is 400. C或更低时,实施例6和实施例8根本不引起粘接。 When C or lower, Example 6 and Example 8 does not cause an adhesive. 虽然实施例7的薄膜载体带显示出比比较例4更高的粘接温度, 温度上的差别还比较小。 Although a film carrier tape of Example 7 exhibits higher bonding temperature 4, the temperature difference is relatively smaller than that of Comparative Example. 然而,由于通过熔融粘接安装半导体元件的温度取决于加热工具的类型、半导体芯片的类型、使用的安装元件的产品等,此温度一般在大约200 -大约350。 However, since the temperature of the semiconductor element is mounted by melting the adhesive depends on the type of heating means, the type of the semiconductor chip, such as the use of the product mounting element, this temperature is usually about 200-- about 350. C,对于本发明的目的,这 C, for the purposes of the present invention, this

样小的粘接温度的提高应该足够了。 Like small increase bonding temperature should be sufficient.

实例9a - 9c Example 9a - 9c

使用S' PERFLEX (住友冶金株式会社的产品)作为薄膜基底,使用C0LC0ATP (商品名:Colcoat公司的产品,含有二氧化硅溶胶,实施例9a)、 C0LC0AT N-103X (商品名:Colcoat公司的产品,含有硅烷化合物,实施例9b)和C0LC0AT SP-2014S (商品名:Colcoat公司的产品,含有硅烷化合物,实施例9c)作为隔离剂。 Use S 'PERFLEX (Sumitomo Metallurgical, Inc.) as the film substrate, using C0LC0ATP (trade name: Colcoat company's products, containing silica sol, Example 9a), C0LC0AT N-103X (trade name: Colcoat company's products , containing a silane compound, Example 9b) embodiment and C0LC0AT SP-2014S (trade name: Colcoat company's products, a silane compound, Example 9c) as a release agent. 所提供的布线图案整体上镀锡,然后把每一种隔离剂涂布在薄膜基底的背侧。 Tin on the whole wiring pattern is provided, and each of the release agent coated on the back side of the film substrate. 在120°C 下加热60分钟来干燥这些涂层,借此形成具有隔离层的C0F薄膜载体带。 Heating these coatings was dried for 60 minutes at 120 ° C, thereby forming a film carrier tape having C0F spacer layer.

测试例6 Test Example 6

把加热工具压在实施例9a - 9c的每个薄膜载体带的隔离层13上。 The pressure in the heating tools Example 9a embodiment - on the spacer layer of each of the film carrier tape 13 9c. 加热工具的温度在440°C - 480°C之间变化。 The temperature of the heating tool at 440 ° C - vary between 480 ° C. 在此加热条件下安装半导体芯片。 Mounting a semiconductor chip in this heating. 借此制造出印刷电路板。 Thereby producing a printed circuit board.

在制造实例9a - 9c的印刷电路板的过程中,观察隔离层和加热工具之间粘接的情况,测定发生粘接的温度。 In the manufacturing Example 9a - 9c process printed circuit boards, to observe the adhesion between the release layer and the heating tool, measurement temperature bonding occurs. 其结果如表6中所示。 The results are shown in Table 6.

表6 Table 6

<table>table see original document page 25</column></row> <table> <Table> table see original document page 25 </ column> </ row> <table>

如在表6中清楚地看到的,实例9a - 9c的薄膜载体带也明显地显示出高的抗粘接性。 As clearly seen in Table 6, Examples 9a - 9c of the film carrier tape also showed a significantly high adhesion resistant.

Claims (23)

1.一种COF柔性印刷线路板,该线路板包括: 一个绝缘层; 一个布线图案,由设置在该绝缘层至少一侧的导体层形成,其上将安装半导体芯片;以及一个隔离层,其中该隔离层由一种隔离剂形成,此隔离剂含有选自聚硅氧烷、硅烷化合物和二氧化硅溶胶的其中一种,而且被设置在绝缘层的表面上,该表面与安装半导体芯片的一侧相对。 A COF flexible printed wiring board, the wiring board comprising: an insulating layer; a wiring pattern formed by a conductive layer disposed on at least one side of the insulating layer, on which the semiconductor chip is mounted; and a spacer layer, wherein the spacer layer is formed of a release agent, the release agent is selected from silicone-containing silane compound, and one of silica sol, and is disposed on the surface of the insulating layer, the surface of the semiconductor chip is mounted opposite side.
2. 如权利要求1的C0F柔性印刷线路板,其中该隔离层由含有硅氮烷化合物的隔离剂形成。 2. C0F flexible printed wiring board as claimed in claim 1, wherein the spacer layer is formed of a release agent containing a silazane compound.
3. 如权利要求1的C0F柔性印刷线路板,其中该隔离层通过在绝缘层上涂布含有隔离剂的溶液并且加热来形成。 3. C0F flexible printed wiring board as claimed in claim 1, wherein the isolation layer on the insulating layer coating solution containing a release agent is formed by heating and.
4. 如权利要求1的C0F柔性印刷线路板,其中该隔离层通过转移设置在转移薄膜基底上的隔离层来形成。 4. C0F flexible printed wiring board of claim 1, wherein the spacer layer is formed by transferring the spacer layer disposed on the transfer film substrate.
5. 如权利要求1至4中任意一项的C0F柔性印刷线路板,其中该绝缘层通过在导体层上涂布含有聚酰亚胺前体树脂的溶液、干燥该溶液并固化树脂来形成。 5. The flexible printed wiring board C0F to any one of claims 1 to 4, wherein the insulating layer on the conductor layer by applying a solution containing a polyimide resin precursor solution, the solution was dried and cured to form the resin.
6. 如权利要求1至4中任意一项的C0F柔性印刷线路板,其中该绝缘层由包括绝缘薄膜和热塑性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层。 6. A flexible printed wiring board C0F any one of claims 1 to 4, wherein the insulating layer comprises a layer structure of an insulating film and a thermoplastic resin composition layer, wherein the structure is hot - pressed - bonded to the conductive layer .
7. 如权利要求1至4中任意一项的C0F柔性印刷线路板,其中该绝缘层由包括绝缘薄膜和热固性树脂层的层结构组成,其中该结构被热-压-粘接于该导体层。 7. The flexible printed wiring board C0F to any one of claims 1 to 4, wherein the insulating layer comprises a layer structure of an insulating film and a thermosetting resin composition layer, wherein the structure is hot - pressed - bonded to the conductive layer .
8. 如权利要求1至4中任意一项的C0F柔性印刷线路板,其中该导体层包括在绝缘层上溅镀的粘接改进层和在此粘接改进层上设置的镀铜层。 8. A flexible printed wiring board 1 C0F to any one of claims 4, wherein the conductive layer comprises sputtering on the insulating layer and the adhesion improving layer copper plating layer on this adhesion improving layer provided.
9. 一种COF柔性印刷线路板的制造方法,该COF柔性印刷线路板包括绝缘层和在其上面将要安装半导体芯片的布线图案,该布线图案是通过在绝缘层的至少一侧上提供的导体层经过光刻而形成,该方法包括:通过光刻使导体层形成图案,借此形成布线图案;以及随后在绝缘层的一表面形成隔离层,该表面与安装半导体芯片的一侧相对,其中该隔离层包含有聚硅氧垸系列化合物。 A method of manufacturing a COF flexible printed wiring board, the COF flexible printed wiring board comprising an insulating layer and to be mounted thereon a wiring pattern of the semiconductor chip through the wiring conductor pattern is provided on at least one side of the insulating layer layer is formed through photolithography, the method comprising: a conductor layer is formed by photolithography patterning, thereby forming a wiring pattern; and subsequently forming an isolation layer on a surface of the insulating layer, the surface of the semiconductor chip is mounted opposite side, wherein the spacer layer comprises a silicone-based compound embankment.
10. 如权利要求9的C0F柔性印刷线路板的制造方法,其中该隔离层是由隔离剂形成,该隔离剂含有选自聚硅氧烷化合物、硅垸化合物和二氧化硅溶胶的其中一种。 10. One method of manufacturing a flexible printed wiring board 9 C0F embankment silicon compound and a silica sol as claimed in claim, wherein the spacer layer is formed of a release agent, the release agent comprises a silicone compound selected, the .
11. 如权利要求9的C0F柔性印刷线路板的制造方法,其中形成隔离层的方法包括涂布含有隔离剂的溶液和加热。 11. The method of manufacturing a flexible printed wiring board C0F as claimed in claim 9, wherein the isolation layer is formed and a heating coating comprises a solution containing a release agent.
12. 如权利要求9至11中任意一项的C0F柔性印刷线路板的制造方法,其中隔离层在除去用于形成布线图案的抗蚀剂掩膜后的任何时间形成。 9 to 11 12. A method of manufacturing a flexible printed wiring board C0F any one of claims, wherein the spacer layer is formed at any time after removing the resist mask for forming the wiring pattern.
13. 如权利要求9至11中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层通过在导体层上涂布含有聚酰亚胺前体树脂的溶液、干燥该溶液并固化该树脂来形成。 9 to 11 13. A method of manufacturing a flexible printed wiring board C0F any one of claims, wherein the insulating layer is formed by coating the solution on the conductor layer comprising a polyimide resin precursor, drying the solution and curing the resin is formed.
14. 如权利要求9至11中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层由包括绝缘薄膜和热塑性树脂层的层结构组成, 其中该结构被热-压-粘接于该导体层。 The method of manufacturing a flexible printed wiring board 14. C0F as claimed in any one of claims 9 to 11, wherein the insulating layer comprises a layer structure of an insulating film and a thermoplastic resin composition layer, wherein the structure is hot - pressed - bonded to the conductor layer.
15. 如权利要求9至11中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层由包括绝缘薄膜和热固性树脂层的层结构组成, 其中该结构被热-压-粘接于该导体层。 The method of manufacturing a flexible printed wiring board 15. C0F as claimed in any one of claims 9 to 11, wherein the insulating layer comprises a layer structure of an insulating film and a thermosetting resin composition layer, wherein the structure is hot - pressed - bonded to the conductor layer.
16. 如权利要求9至11中任意一项的C0F柔性印刷线路板的制造方法,其中该导体层包括在绝缘层上溅镀的粘接改进层和在该粘接改进层上提供的镀铜层。 16. A method for producing a 9 to 11 C0F flexible printed wiring board of any one of claims, wherein the conductive layer comprises sputtering on the insulating layer and the adhesion improving layer provided on the copper to improve the adhesive layer Floor.
17. —种C0F柔性印刷线路板的制造方法,该C0F柔性印刷线路板包括绝缘层和将在其上安装半导体芯片的布线图案,该布线图案是在绝缘层的至少一侧提供的导体层上形成的,该方法包括:使该导体层形成图案,借此形成布线图案;以及把在薄膜基底上形成的用于转移的隔离层转移到绝缘层上与半导体芯片安装一侧相对的表面上。 17. - A method for producing seed C0F flexible printed wiring board, the flexible printed wiring board comprising C0F insulating layer and a wiring pattern of a semiconductor chip mounted thereon, the wiring pattern is provided on at least one side of the conductor layer on the insulating layer formation, the method comprising: the conductive layer is patterned, thereby forming a wiring pattern; and transferring the spacer layer for transfer formed on the film substrate onto the upper surface of the insulating layer and the semiconductor chip mounting side opposite.
18. 如权利要求17的C0F柔性印刷线路板的制造方法,其中该隔离层含有聚硅氧烷系列化合物。 18. The method of manufacturing a flexible printed wiring board C0F claim 17, wherein the release layer comprises a silicone-based compound.
19. 如权利要求17的C0F柔性印刷线路板的制造方法,其中该隔离层是由隔离剂形成的,该隔离剂含有选自聚硅氧垸化合物、硅垸化合物和二氧化硅溶胶的其中一种。 The manufacturing method wherein a flexible printed wiring board C0F of claim 17, wherein the spacer layer is formed of a release agent, the release agent comprises a silicone selected embankment compound, a silicon compound and a silica sol embankment species.
20. 如权利要求17至19中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层通过在该导体层上涂布含有聚酰亚胺前体树脂的溶液、干燥该溶液并固化该树脂而形成。 17 to 19 20. A method of manufacturing a flexible printed wiring board C0F any one of claims, wherein the insulating layer solution was applied on the conductive layer contains a polyimide precursor resin through, the solution was dried and cured the resin is formed.
21. 如权利要求17至19中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层由包括绝缘薄膜和热塑性树脂层的层结构组成, 其中该结构被热-压-粘接于该导体层。 17 to 19 21. A method for producing flexible printed wiring board of any one C0F, wherein the insulating layer is a layer structure including an insulating film and a thermoplastic resin composition layer as claimed in claim, wherein the structure is hot - pressed - bonded to the conductor layer.
22. 如权利要求17至19中任意一项的C0F柔性印刷线路板的制造方法,其中该绝缘层由包括绝缘薄膜和热固性树脂层的层结构组成, 其中该结构被热-压-粘接于该导体层。 17 to 19 22. A method for producing flexible printed wiring board of any one C0F, wherein the insulating layer is a layer structure including an insulating film and a thermosetting resin composition layer as claimed in claim, wherein the structure is hot - pressed - bonded to the conductor layer.
23. 如权利要求17至19中任意一项的C0F柔性印刷线路板的制造方法,其中该导体层包括在该绝缘层上溅镀的粘接改进层和在此粘接改进层上提供的镀铜层。 17 to 19 23. A method of manufacturing a flexible printed wiring board C0F any one of claims, wherein the conductive layer comprises an adhesive layer to improve sputtering on the insulating layer and the adhesive coated on this layer provides an improved copper layer.
CNA2007101085242A 2002-03-13 2003-03-13 COF flexible printed wiring board and manufacturing method for the same CN101102638A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103958161A (en) * 2011-09-23 2014-07-30 1366科技公司 Method and apparatus for handling, heating and cooling a substrate upon which a pattern is made by a tool in heat flowable material coating, including substrate transport, tool laydown, tool tensioning, and tool retraction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103958161A (en) * 2011-09-23 2014-07-30 1366科技公司 Method and apparatus for handling, heating and cooling a substrate upon which a pattern is made by a tool in heat flowable material coating, including substrate transport, tool laydown, tool tensioning, and tool retraction

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