CN101093857A - 场效应型晶体管及其制造方法 - Google Patents

场效应型晶体管及其制造方法 Download PDF

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Publication number
CN101093857A
CN101093857A CN 200710127334 CN200710127334A CN101093857A CN 101093857 A CN101093857 A CN 101093857A CN 200710127334 CN200710127334 CN 200710127334 CN 200710127334 A CN200710127334 A CN 200710127334A CN 101093857 A CN101093857 A CN 101093857A
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China
Prior art keywords
mentioned
semiconductor region
silicide
impurity
fet
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CN 200710127334
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English (en)
Chinese (zh)
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木下敦宽
古贺淳二
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Toshiba Corp
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Toshiba Corp
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Publication of CN101093857A publication Critical patent/CN101093857A/zh
Pending legal-status Critical Current

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN 200710127334 2003-09-05 2004-09-03 场效应型晶体管及其制造方法 Pending CN101093857A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003314328 2003-09-05
JP2003314328 2003-09-05
JP2004251534 2004-08-31

Related Parent Applications (1)

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CNB2004100686328A Division CN100472811C (zh) 2003-09-05 2004-09-03 场效应型晶体管及其制造方法

Publications (1)

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CN101093857A true CN101093857A (zh) 2007-12-26

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CN 200710127334 Pending CN101093857A (zh) 2003-09-05 2004-09-03 场效应型晶体管及其制造方法

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JP (1) JP5204077B2 (ja)
CN (1) CN101093857A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103288036A (zh) * 2012-02-23 2013-09-11 罗伯特·博世有限公司 具有可动栅极的微机械传感器和相应的制造方法
CN103972089A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法
CN103972090A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法
CN103972091A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969867B2 (en) * 2012-01-18 2015-03-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7290028B2 (ja) 2019-01-21 2023-06-13 富士電機株式会社 半導体装置および半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5947767A (ja) * 1982-09-10 1984-03-17 Nippon Telegr & Teleph Corp <Ntt> Ｍｉｓ形半導体素子
FR2806832B1 (fr) * 2000-03-22 2002-10-25 Commissariat Energie Atomique Transistor mos a source et drain metalliques, et procede de fabrication d'un tel transistor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103288036A (zh) * 2012-02-23 2013-09-11 罗伯特·博世有限公司 具有可动栅极的微机械传感器和相应的制造方法
CN103972089A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法
CN103972090A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法
CN103972091A (zh) * 2013-01-28 2014-08-06 中国科学院微电子研究所 半导体器件及其制造方法
CN103972089B (zh) * 2013-01-28 2018-09-18 中国科学院微电子研究所 半导体器件及其制造方法

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Publication number Publication date
JP2010045394A (ja) 2010-02-25
JP5204077B2 (ja) 2013-06-05

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Application publication date: 20071226